51
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Turner RD, Inkson JC. Optical properties of diamond and silicon from a tight-binding model, with local microscopic fields included. ACTA ACUST UNITED AC 2001. [DOI: 10.1088/0022-3719/9/19/012] [Citation(s) in RCA: 20] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
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52
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53
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54
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Turner RD, Inkson JC. Local field effects in the static response of the elemental semiconductors. ACTA ACUST UNITED AC 2001. [DOI: 10.1088/0022-3719/11/13/034] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
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55
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Larsen PK, Neave JH, Joyce BA. Angle-resolved photoemission from As-stable GaAs (001) surfaces prepared by MBE. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3719/14/2/013] [Citation(s) in RCA: 59] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
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56
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Masovic DR, Vukajlovic FR, Zekovic S. Local-pseudopotential calculation for optical properties and photoemission valence-band spectrum of silicon. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3719/16/35/007] [Citation(s) in RCA: 18] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
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57
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58
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59
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Nanoscale EELS analysis of dielectric function and bandgap properties in gaN and related materials. Micron 2000; 31:435-40. [PMID: 10741613 DOI: 10.1016/s0968-4328(99)00121-3] [Citation(s) in RCA: 56] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The low loss region of an EEL spectrum (<50 eV) contains information about excitations of outer shell electrons and thus the electronic structure of a specimen which determines its optical properties. In this work, dedicated electron energy loss spectroscopy (EELS) methods for the experimental acquisition and analysis of spectra are described, which give improved information about the electronic structure near the bandgap region at a spatial resolution in the range of nanometers. For this purpose, we made use of a cold field emission scanning transmission electron microscope (STEM) equipped with a dedicated EELS system. This device provides a subnanometer electron probe and offers an energy resolution of 0.35 eV. Application of suitable deconvolution routines for removal of the zero loss peak extracts information on the bandgap region while the Kramers-Kronig transformation deduces the dielectric properties from the measured energy loss function. These methods have been applied to characterize the optical properties of wide-bandgap materials for the case of III-nitride compounds, which are currently the most promising material for applications on optoelectronic devices working in the blue and ultraviolet spectral range. The obtained results are in excellent agreement with experimental measurements by synchrotron ellipsometry and theoretical studies. The potential of the superior spatial resolution of EELS in a STEM is demonstrated by the analysis of dielectric properties of individual layers of heterostructures and individual defects within wurtzite GaN.
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60
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Larruquert JI, Keski-Kuha RA. Reflectance measurements and optical constants in the extreme ultraviolet for thin films of ion-beam-deposited SiC, Mo, Mg2Si, and InSb and of evaporated Cr. APPLIED OPTICS 2000; 39:2772-2781. [PMID: 18345201 DOI: 10.1364/ao.39.002772] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
Reflectance measurements and optical constants of thin films of ion-beam-deposited SiC, Mo, Mg(2)Si, and InSb and of evaporated Cr have been measured in the extreme-ultraviolet (EUV) spectral region from 49.0 to 200.0 nm. In this spectral region no optical constant data were available for materials deposited by ion-beam deposition. We compared our data with those for bulk samples and for thin films prepared by different techniques. The goal of this research has been to study candidate materials for multilayer coatings in the EUV.
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61
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Yin D, Inatomi Y. Measurement of Refractive Index of GaP Crystal over a Large Temperature Range Using Interferometry. CRYSTAL RESEARCH AND TECHNOLOGY 2000. [DOI: 10.1002/(sici)1521-4079(200002)35:2<221::aid-crat221>3.0.co;2-8] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
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62
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Ishii S, Ohno K, Kawazoe Y. Dielectric Response Functions Studied by an All-Electron Mixed-Basis Approach. ACTA ACUST UNITED AC 1999. [DOI: 10.2320/matertrans1989.40.1209] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/01/2022]
Affiliation(s)
- Soh Ishii
- Institute for Materials Research, Tohoku University
| | - Kaoru Ohno
- Institute for Materials Research, Tohoku University
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63
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Poenar DP, Wolffenbuttel RF. Optical properties of thin-film silicon-compatible materials. APPLIED OPTICS 1997; 36:5122-5128. [PMID: 18259324 DOI: 10.1364/ao.36.005122] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
The optical performance of photodetectors in silicon strongly depends on the transmission of incident light into Si and the charge collection efficiency therein. Consequently, improving the transmission efficiency of light into Si by means of an interference antireflectant (AR) filter can lead to improved optoelectric conversion efficiency. However, the design of these filters requires the availability of data on the optical characteristics of the materials used. Furthermore, for the realization of such filters for light detectors realized in silicon, the required compatibility with standard microelectronic processing implies that only Si-compatible materials should be used. The range of such Si-compatible materials available for fabricating photoelectric devices in silicon includes thermally grown SiO(2), low-pressure chemical-vapor deposited polysilicon, silicon nitride (low stress and stoichiometric), and oxides (low-temperature oxide, phosphosilicate glass, borosilicate glass, borophosphosilicate glass) as well as plasma-enhanced chemical-vapor deposited oxynitrides. We present the refractive index and the extinction coefficient of these materials in the 380-800-nm range. The data presented enhance the accuracy and applicability of simulation and design tools used to design photodetectors in silicon for the visible range.
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64
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Pseudopotential theory of nanometer silicon quantum dots. SEMICONDUCTOR NANOCLUSTERS - PHYSICAL, CHEMICAL, AND CATALYTIC ASPECTS 1997. [DOI: 10.1016/s0167-2991(97)81103-2] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
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65
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Schäfer R, Becker JA. Photoabsorption spectroscopy on isolated GaNAsM clusters. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:10296-10299. [PMID: 9984807 DOI: 10.1103/physrevb.54.10296] [Citation(s) in RCA: 38] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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66
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Alouani M, Wills JM. Calculated optical properties of Si, Ge, and GaAs under hydrostatic pressure. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:2480-2490. [PMID: 9986095 DOI: 10.1103/physrevb.54.2480] [Citation(s) in RCA: 49] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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67
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Adolph B, Gavrilenko VI, Tenelsen K, Bechstedt F. Nonlocality and many-body effects in the optical properties of semiconductors. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:9797-9808. [PMID: 9982540 DOI: 10.1103/physrevb.53.9797] [Citation(s) in RCA: 27] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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68
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Hughes JL, Sipe JE. Calculation of second-order optical response in semiconductors. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:10751-10763. [PMID: 9982642 DOI: 10.1103/physrevb.53.10751] [Citation(s) in RCA: 82] [Impact Index Per Article: 2.9] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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69
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Neslädek M, van ěček M, Stals LM. Defect-Induced Optical Absorption in CVD Diamond Films. ACTA ACUST UNITED AC 1996. [DOI: 10.1002/pssa.2211540121] [Citation(s) in RCA: 40] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
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70
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Adachi S, Miyazaki T. Ellipsometric and thermoreflectance spectra of epitaxial InSb films. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 51:14317-14323. [PMID: 9978361 DOI: 10.1103/physrevb.51.14317] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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71
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Glezer EN, Siegal Y, Huang L, Mazur E. Laser-induced band-gap collapse in GaAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 51:6959-6970. [PMID: 9977251 DOI: 10.1103/physrevb.51.6959] [Citation(s) in RCA: 35] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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72
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Logothetidis S, Petalas J, Cardona M, Moustakas TD. Optical properties and temperature dependence of the interband transitions of cubic and hexagonal GaN. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 50:18017-18029. [PMID: 9976231 DOI: 10.1103/physrevb.50.18017] [Citation(s) in RCA: 24] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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73
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Siegal Y, Glezer EN, Mazur E. Dielectric constant of GaAs during a subpicosecond laser-induced phase transition. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:16403-16406. [PMID: 10010791 DOI: 10.1103/physrevb.49.16403] [Citation(s) in RCA: 17] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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74
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Xiong F, Wang YY, Chang RP. Complex dielectric function of amorphous diamond films deposited by pulsed-excimer-laser ablation of graphite. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:8016-8023. [PMID: 10006990 DOI: 10.1103/physrevb.48.8016] [Citation(s) in RCA: 23] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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75
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Hao L, Yang B, Xu K, Fang Z, Xu X, Chen J, Chen Y. Emission spectrum of silicon in the region of anomalous dispersion. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 47:13320-13322. [PMID: 10005638 DOI: 10.1103/physrevb.47.13320] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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76
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Rezvani GA, Friauf RJ. Dielectric function of a model insulator. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 47:9215-9228. [PMID: 10004985 DOI: 10.1103/physrevb.47.9215] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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77
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Huang MZ, Ching WY. Calculation of optical excitations in cubic semiconductors. I. Electronic structure and linear response. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 47:9449-9463. [PMID: 10005011 DOI: 10.1103/physrevb.47.9449] [Citation(s) in RCA: 103] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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78
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Kim CC, Garland JW, Raccah PM. Modeling the optical dielectric function of the alloy system AlxGa1-xAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 47:1876-1888. [PMID: 10006225 DOI: 10.1103/physrevb.47.1876] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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79
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Reddy RR, Kumar MR, Rao TVR. Interrelations between Interionic Separation, Lattice Energy, and Plasma Energy for Alkali Halide Crystals. CRYSTAL RESEARCH AND TECHNOLOGY 1993. [DOI: 10.1002/crat.2170280718] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
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80
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Merkel M, Kleint C, Neumann H, Horak J. Ultraviolet Reflectivity of TlSbS2. CRYSTAL RESEARCH AND TECHNOLOGY 1993. [DOI: 10.1002/crat.2170280511] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
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81
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Engel GE, Farid B. Calculation of the dielectric properties of semiconductors. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 46:15812-15827. [PMID: 10003721 DOI: 10.1103/physrevb.46.15812] [Citation(s) in RCA: 18] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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82
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Etchegoin P, Kircher J, Cardona M, Grein C, Bustarret E. Piezo-optics of GaAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 46:15139-15149. [PMID: 10003628 DOI: 10.1103/physrevb.46.15139] [Citation(s) in RCA: 25] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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83
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Schwarz WN, Yang QY, Chen DL, Osgood RM. Optical interferometric effects in photofragmentation of physisorbed molecules. J Chem Phys 1992. [DOI: 10.1063/1.463571] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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84
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Fischetti MV. Effect of the electron-plasmon interaction on the electron mobility in silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 44:5527-5534. [PMID: 9998389 DOI: 10.1103/physrevb.44.5527] [Citation(s) in RCA: 26] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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85
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Fitting HJ, Hinkfoth C, Glaefeke JC, Kuhr H. Electron Scattering in the keV and Sub-keV Range. ACTA ACUST UNITED AC 1991. [DOI: 10.1002/pssa.2211260108] [Citation(s) in RCA: 18] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
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86
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Windt DL. XUV optical constants of single-crystal GaAs and sputtered C, Si, Cr(3)C(2), Mo, and W. APPLIED OPTICS 1991; 30:15-25. [PMID: 20581942 DOI: 10.1364/ao.30.000015] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/29/2023]
Abstract
The optical constants for sputtered films of C, Si, Mo, and W are presented for photon wavelengths from 13.3 to 304 A, and for single-crystal GaAs and sputtered Cr(3)C(2) from 13.3 to 1302 A. The best-fit values of the optical constants, and also the surface roughness parameter sigma, are obtained from reflectance vs incidence angle measurements using a nonlinear, least-squares curve fitting algorithm. These optical constants are significantly different from previously reported data in portions of this spectral region. The new optical data result in good agreement between theory and reflectance measurements of soft x-ray multilayer coatings made from the sputtered materials.
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87
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Goi AR, Syassen K, Cardona M. Effect of pressure on the refractive index of Ge and GaAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 41:10104-10110. [PMID: 9993393 DOI: 10.1103/physrevb.41.10104] [Citation(s) in RCA: 54] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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88
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89
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Sakurai K, Yamada N. Second-harmonic radiation from an AlGaAs laser and its application for absorption spectroscopy. OPTICS LETTERS 1989; 14:233-235. [PMID: 19749880 DOI: 10.1364/ol.14.000233] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Second-harmonic radiation of several picowatts from various commercial laser diodes with several milliwatts of output power has been observed at various temperatures from 130 to 310 K. No temperature dependence of the conversion efficiency was observed. The spectral width of the second-harmonic radiation was limited by that of the fundamental radiation. An application of the internal second-harmonic radiation to a spectroscopic light source allowed observation of some absorption lines of potassium and aluminum.
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90
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Adachi S. Model dielectric constants of Si and Ge. PHYSICAL REVIEW. B, CONDENSED MATTER 1988; 38:12966-12976. [PMID: 9946269 DOI: 10.1103/physrevb.38.12966] [Citation(s) in RCA: 68] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
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91
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Finkenrath H. The moss rule and the influence of doping on the optical dielectric constant of semiconductors—II. ACTA ACUST UNITED AC 1988. [DOI: 10.1016/0020-0891(88)90061-9] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/27/2022]
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92
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Alouani M, Gopalan S, Garriga M, Christensen NE. Interband transitions in ultrathin GaAs-AlAs superlattices. PHYSICAL REVIEW LETTERS 1988; 61:1643-1646. [PMID: 10038858 DOI: 10.1103/physrevlett.61.1643] [Citation(s) in RCA: 21] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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93
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Forouhi AR, Bloomer I. Optical properties of crystalline semiconductors and dielectrics. PHYSICAL REVIEW. B, CONDENSED MATTER 1988; 38:1865-1874. [PMID: 9946471 DOI: 10.1103/physrevb.38.1865] [Citation(s) in RCA: 344] [Impact Index Per Article: 9.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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94
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Alouani M, Brey L, Christensen NE. Calculated optical properties of semiconductors. PHYSICAL REVIEW. B, CONDENSED MATTER 1988; 37:1167-1179. [PMID: 9944623 DOI: 10.1103/physrevb.37.1167] [Citation(s) in RCA: 46] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
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95
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Philipp HR, Legrand DG, Cole HS, Liu YS. The optical properties of bisphenol-A polycarbonate. POLYM ENG SCI 1987. [DOI: 10.1002/pen.760271507] [Citation(s) in RCA: 15] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/05/2022]
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96
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Jaenicke S, Faber MK, Dye JL, Pratt W. Optical reflectivity and absorption measurements of sodium C222 sodide. J SOLID STATE CHEM 1987. [DOI: 10.1016/0022-4596(87)90309-4] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
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97
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98
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Batson P, Kavanagh K, Wong C, Woodall J. Local bonding and electronic structure obtained from electron energy loss scattering. Ultramicroscopy 1987. [DOI: 10.1016/0304-3991(87)90053-2] [Citation(s) in RCA: 37] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022]
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99
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Batson PE, Kavanagh KL, Woodall JM, Mayer JW. Electron-energy-loss scattering near a single misfit dislocation at the GaAs/GaInAs interface. PHYSICAL REVIEW LETTERS 1986; 57:2729-2732. [PMID: 10033846 DOI: 10.1103/physrevlett.57.2729] [Citation(s) in RCA: 25] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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100
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Lévque G. Augmented partial sum rules for the analysis of optical data. PHYSICAL REVIEW. B, CONDENSED MATTER 1986; 34:5070-5072. [PMID: 9940330 DOI: 10.1103/physrevb.34.5070] [Citation(s) in RCA: 25] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
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