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Citation(s) in RCA

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Results Analysis
For: Froyen S, Wood DM, Zunger A. Structural and electronic properties of epitaxial thin-layer SinGen superlattices. Phys Rev B Condens Matter 1988;37:6893-6907. [PMID: 9943959 DOI: 10.1103/physrevb.37.6893] [Citation(s) in RCA: 72] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
Number Cited by Other Article(s)
51
Qteish A, Motta N, Balzarotti A. Effect of relaxation of the second-nearest neighbors on the thermodynamic properties of semiconducting alloys: Application to GaAsySb1-y. PHYSICAL REVIEW. B, CONDENSED MATTER 1989;39:5987-5997. [PMID: 9949021 DOI: 10.1103/physrevb.39.5987] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
52
Gershoni D, Temkin H, Panish MB, Hamm RA. Excitonic transitions in strained-layer InxGa1-xAs/InP quantum wells. PHYSICAL REVIEW. B, CONDENSED MATTER 1989;39:5531-5534. [PMID: 9948955 DOI: 10.1103/physrevb.39.5531] [Citation(s) in RCA: 18] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
53
Van de Walle CG. Atomic and electronic structure of Si-Ge superlattices. PHYSICAL REVIEW LETTERS 1989;62:974. [PMID: 10040387 DOI: 10.1103/physrevlett.62.974] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
54
Froyen S, Wood DM, Zunger A. Comment on "Electronic structure and optical properties of Si-Ge superlattices". PHYSICAL REVIEW LETTERS 1989;62:975. [PMID: 10040388 DOI: 10.1103/physrevlett.62.975] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
55
Pearsall TP, Bevk J, Bean JC, Bonar J, Mannaerts JP, Ourmazd A. Electronic structure of Ge/Si monolayer strained-layer superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1989;39:3741-3757. [PMID: 9948696 DOI: 10.1103/physrevb.39.3741] [Citation(s) in RCA: 43] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
56
Satpathy S, Martin RM. Electronic properties of the (100) (Si)/(Ge) strained-layer superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1988;38:13237-13245. [PMID: 9946301 DOI: 10.1103/physrevb.38.13237] [Citation(s) in RCA: 63] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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