Infrared spectroscopy of Landau levels of graphene

High-Resolution Faraday Rotation and Electron-Phonon Coupling in Surface States of the Bulk-Insulating Topological Insulator Cu_{0.02}Bi_{2}Se_{3}

We have utilized time-domain magnetoterahertz spectroscopy to investigate the low-frequency optical response of the topological insulator Cu_{0.02}Bi_{2}Se_{3} and Bi_{2}Se_{3} films. With both field and frequency dependence, such experiments give sufficient information to measure the mobility and carrier density of multiple conduction channels simultaneously. We observe sharp cyclotron resonances (CRs) in both materials. The small amount of Cu incorporated into the Cu_{0.02}Bi_{2}Se_{3} induces a true bulk insulator with only a single type of conduction with a total sheet carrier density of ~4.9×10^{12}/cm^{2} and mobility as high as 4000 cm^{2}/V·s. This is consistent with conduction from two virtually identical topological surface states (TSSs) on the top and bottom of the film with a chemical potential ~145 meV above the Dirac point and in the bulk gap. The CR broadens at high fields, an effect that we attribute to an electron-phonon interaction. This assignment is supported by an extended Drude model analysis of the zero-field Drude conductance. In contrast, in normal Bi_{2}Se_{3} films, two conduction channels were observed, and we developed a self-consistent analysis method to distinguish the dominant TSSs and coexisting trivial bulk or two-dimensional electron gas states. Our high-resolution Faraday rotation spectroscopy on Cu_{0.02}Bi_{2}Se_{3} paves the way for the observation of quantized Faraday rotation under experimentally achievable conditions to push the chemical potential in the lowest Landau level.

Magneto-electronic properties of multilayer graphenes

This article reviews the rich magneto-electronic properties of multilayer graphene systems. Multilayer graphenes are built from graphene sheets attracting one another by van der Waals forces; the magneto-electronic properties are diversified by the number of layers and the stacking configurations. For an N-layer system, Landau levels are divided into N groups, with each identified by a dominant sublattice associated with the stacking configuration. We focus on the main characteristics of Landau levels, including the degeneracy, wave functions, quantum numbers, onset energies, field-dependent energy spectra, semiconductor-metal transitions, and crossing patterns, which are reflected in the magneto-optical spectroscopy, scanning tunneling spectroscopy, and quantum transport experiments. The Landau levels in AA-stacked graphene are responsible for multiple Dirac cones, while in AB-stacked graphene the Dirac properties depend on the number of graphene layers, and in ABC-stacked graphene the low-lying levels are related to surface states. The Landau-level mixing leads to anticrossings patterns in energy spectra, which are seen for intergroup Landau levels in AB-stacked graphene, while in particular, a formation of both intergroup and intragroup anticrossings is observed in ABC-stacked graphene. The aforementioned magneto-electronic properties lead to diverse optical spectra, plasma spectra, and transport properties when the stacking order and the number of layers are varied. The calculations are in agreement with optical and transport experiments, and novel features that have not yet been verified experimentally are presented.

Landau level spectroscopy of electron-electron interactions in graphene

We present magneto-Raman scattering studies of electronic inter-Landau level excitations in quasineutral graphene samples with different strengths of Coulomb interaction. The band velocity associated with these excitations is found to depend on the dielectric environment, on the index of Landau level involved, and to vary as a function of the magnetic field. This contradicts the single-particle picture of noninteracting massless Dirac electrons but is accounted for by theory when the effect of electron-electron interaction is taken into account. Raman active, zero-momentum inter-Landau level excitations in graphene are sensitive to electron-electron interactions due to the nonapplicability of the Kohn theorem in this system, with a clearly nonparabolic dispersion relation.

Low B field magneto-phonon resonances in single-layer and bilayer graphene

Many-body effects resulting from strong electron-electron and electron-phonon interactions play a significant role in graphene physics. We report on their manifestation in low B field magneto-phonon resonances in high-quality exfoliated single-layer and bilayer graphene encapsulated in hexagonal boron nitride. These resonances allow us to extract characteristic effective Fermi velocities, as high as 1.20 × 10(6) m/s, for the observed "dressed" Landau level transitions, as well as the broadening of the resonances, which increases with the Landau level index.

Dynamical conductivity of gated AA-stacking multilayer graphene with spin–orbital coupling

The exact energy spectrum and dynamical conductivity in gated AA-stacking multilayer graphene with spin–orbital coupling are efficiently derived through an analytical formula.

Magneto-optical properties of ABC-stacked trilayer graphene

The generalized tight-binding model is developed to investigate the magneto-optical absorption spectra of ABC-stacked trilayer graphene.

Probing electronic excitations in mono- to pentalayer graphene by micro magneto-Raman spectroscopy

We probe electronic excitations between Landau levels in freestanding N-layer graphene over a broad energy range, with unprecedented spectral and spatial resolution, using micro magneto-Raman scattering spectroscopy. A characteristic evolution of electronic bands in up to five Bernal-stacked graphene layers is evidenced and shown to remarkably follow a simple theoretical approach, based on an effective bilayer model. (N > 3)-layer graphenes appear as appealing candidates in the quest for novel phenomena, particularly in the quantum Hall effect regime. Our work paves the way toward minimally invasive investigations of magneto-excitons in other emerging low-dimensional systems, with a spatial resolution down to 1 μm.

The selection rule of graphene in a composite magnetic field

The generalized tight-binding model with exact diagonalization method is developed to calculate the optical properties of monolayer graphene in the presence of composite magnetic fields. The ratio of the uniform magnetic field and the modulated one accounts for a strong influence on the structure, number, intensity and frequency of absorption peaks, and thus the extra selection rules that are subsequently induced can be explained. When the modulated field increases, each symmetric peak, under a uniform magnetic field, splits into a pair of asymmetric peaks with lower intensities. The threshold absorption frequency exhibits an obvious evolution in terms of a redshift. These absorption peaks obey the same selection rule that is followed by Landau level transitions. Moreover, at a sufficiently strong modulation strength, the extra peaks in the absorption spectrum might arise from different selection rules.

Electrical switch to the resonant magneto-phonon effect in graphene

We report a comprehensive study of the tuning with electric fields of the resonant magneto-exciton optical phonon coupling in gated graphene. For magnetic fields around B ∼ 25 T that correspond to the range of the fundamental magneto-phonon resonance, the electron-phonon coupling can be switched on and off by tuning the position of the Fermi level in order to Pauli block the two fundamental inter-Landau level excitations. The effects of such a profound change in the electronic excitation spectrum are traced through investigations of the optical phonon response in polarization resolved magneto-Raman scattering experiments. We report on the observation of a splitting of the phonon feature with satellite peaks developing at particular values of the Landau level filling factor on the low or on the high energy side of the phonon, depending on the relative energy of the discrete electronic excitation and of the optical phonon. Shifts of the phonon energy as large as ±60 cm(-1) are observed close to the resonance. The intraband electronic excitation, the cyclotron resonance, is shown to play a relevant role in the observed spectral evolution of the phonon response.

Magneto-optical fingerprints of distinct graphene multilayers using the giant infrared Kerr effect

The remarkable electronic properties of graphene strongly depend on the thickness and geometry of graphene stacks. This wide range of electronic tunability is of fundamental interest and has many applications in newly proposed devices. Using the mid-infrared, magneto-optical Kerr effect, we detect and identify over 18 interband cyclotron resonances (CR) that are associated with ABA and ABC stacked multilayers as well as monolayers that coexist in graphene that is epitaxially grown on 4H-SiC. Moreover, the magnetic field and photon energy dependence of these features enable us to explore the band structure, electron-hole band asymmetries, and mechanisms that activate a CR response in the Kerr effect for various multilayers that coexist in a single sample. Surprisingly, we find that the magnitude of monolayer Kerr effect CRs is not temperature dependent. This unexpected result reveals new questions about the underlying physics that makes such an effect possible.

Landau level spectroscopy of Dirac electrons in a polar semiconductor with giant Rashba spin splitting

Optical excitations of BiTeI with large Rashba spin splitting have been studied in an external magnetic field (B) applied parallel to the polar axis. A sequence of transitions between the Landau levels (LLs), whose energies are in proportion to √B were observed, being characteristic of massless Dirac electrons. The large separation energy between the LLs makes it possible to detect the strongest cyclotron resonance even at room temperature in moderate fields. Unlike in 2D Dirac systems, the magnetic field induced rearrangement of the conductivity spectrum is directly observed.

Massless Dirac fermions in graphene under an external periodic magnetic field

By solving the two-component spinor equation for massless Dirac fermions, we show that graphene under a periodic external magnetic field exhibits a unique energy spectrum. At low energies, Dirac fermions are localized inside the magnetic region with discrete Landau energy levels, while at higher energies, Dirac fermions are mainly found in non-magnetic regions with continuous energy bands originating from wavefunctions analogous to particle-in-box states of electrons. These findings offer a new methodology for the control and tuning of massless Dirac fermions in graphene.

Magnetoplasmons in quasineutral epitaxial graphene nanoribbons

We present an infrared transmission spectroscopy study of the inter-Landau-level excitations in quasineutral epitaxial graphene nanoribbon arrays. We observed a substantial deviation in energy of the L(0(-1)) → L(1(0)) transition from the characteristic square root magnetic-field dependence of two-dimensional graphene. This deviation arises from the formation of an upper-hybrid mode between the Landau-level transition and the plasmon resonance. In the quantum regime, the hybrid mode exhibits a distinct dispersion relation, markedly different from that expected for conventional two-dimensional systems and highly doped graphene.

Wide-band frequency-tunable terahertz and infrared detection with graphene

We report a graphene-based frequency-selective terahertz (THz) and infrared (IR) detector. The experimental results have demonstrated that the graphene transistor under a magnetic field is capable of detecting THz and IR waves in a very wide band of frequencies (0.76-33 THz) and that the detection frequency is tuned by changing the magnetic field. We have further imaged electric potential distribution in the graphene detector and have observed local step structure associated with impurities. The THz and IR photoconductivity properties of graphene are likely to be sensitive to such potential steps.

Valley-spin polarization in the magneto-optical response of silicene and other similar 2D crystals

We calculate the magneto-optical conductivity and electronic density of states for silicene, the silicon equivalent of graphene, and similar crystals such as germanene. In the presence of a perpendicular magnetic field and electric field gating, we note that four spin- and valley-polarized levels can be seen in the density of states, and transitions between these levels lead to similarly polarized absorption lines in the longitudinal, transverse Hall, and circularly polarized dynamic conductivity. While previous spin and valley polarization predicted for the conductivity is only present in the response to circularly polarized light, we show that distinct spin and valley polarization can also be seen in the longitudinal magneto-optical conductivity at experimentally attainable energies. The frequency of the absorption lines may be tuned by the electric and magnetic field to onset in a range varying from THz to the infrared. This potential to isolate charge carriers of definite spin and valley label may make silicene a promising candidate for spin- and valleytronic devices.

Nonlinear optics of graphene in a strong magnetic field

Graphene placed in a magnetic field possesses an extremely high mid/far-infrared optical nonlinearity originating from its unusual band structure and selection rules for the optical transitions near the Dirac point. Here, we study the linear and nonlinear optical response of graphene in strong magnetic and optical fields using a quantum-mechanical density-matrix formalism. We calculate the power of the coherent terahertz radiation generated as a result of the four-wave mixing in graphene. We show that even one monolayer of graphene gives rise to an appreciable nonlinear frequency conversion efficiency and Raman gain for modest intensities of the incident infrared radiation.

Electron-phonon bound states in graphene in a perpendicular magnetic field

The spectrum of electron-phonon complexes in monolayer graphene is investigated in the presence of a perpendicular quantizing magnetic field. Despite the small electron-phonon coupling, usual perturbation theory is inapplicable for the calculation of the scattering amplitude near the threshold of optical phonon emission. Our findings, beyond perturbation theory, show that the true spectrum near the phonon-emission threshold is completely governed by new branches, corresponding to bound states of an electron and an optical phonon with a binding energy of the order of αω(0), where α is the electron-phonon coupling and ω(0) the phonon energy.

Giant optical nonlinearity of graphene in a strong magnetic field

We calculate the nonlinear optical response of graphene in strong magnetic and optical fields, using a quantum-mechanical density-matrix formalism. We show that graphene in a magnetic field possesses a giant mid- or far-infrared optical nonlinearity, perhaps the highest among known materials. The high nonlinearity originates from unique electronic properties and selection rules near the Dirac point. As a result, even one monolayer of graphene gives rise to an appreciable nonlinear frequency conversion efficiency for incident infrared radiation.

Electronic properties of graphene: a perspective from scanning tunneling microscopy and magnetotransport

This review covers recent experimental progress in probing the electronic properties of graphene and how they are influenced by various substrates, by the presence of a magnetic field and by the proximity to a superconductor. The focus is on results obtained using scanning tunneling microscopy, spectroscopy, transport and magnetotransport techniques.

The effects of the magnetopolaron on the energy gap opening in graphene

The magnetopolaron is formed via electron-acoustic deformation phonon coupling in the presence of a magnetic field in monolayer graphene. We find that an energy gap (EG) is opened due to the electron-phonon coupling. Both linear and square-root forms for the dependence of the EG on the magnetic field are obtained, which are in agreement with experimental measurements. Furthermore, we suggest that the EG can be estimated through observing the variation of Fermi velocity in cyclotron resonance experiments. The relation of the EG with the Debye cut-off wavenumber is also discussed.

Influence of Landau level mixing on the properties of elementary excitations in graphene in strong magnetic field

Massless Dirac electrons in graphene fill Landau levels with energies scaled as square roots of their numbers. Coulomb interaction between electrons leads to mixing of different Landau levels. The relative strength of this interaction depends only on dielectric susceptibility of surrounding medium and can be large in suspended graphene. We consider influence of Landau level mixing on the properties of magnetoexcitons and magnetoplasmons-elementary electron-hole excitations in graphene in quantizing magnetic field. We show that, at small enough background dielectric screening, the mixing leads to very essential change of magnetoexciton and magnetoplasmon dispersion laws in comparison with the lowest Landau level approximation.PACS: 73.22.Pr; 71.35.Ji; 73.43.Mp; 71.70.Gm.

The effect of spin-orbit interaction on optical conductivity in graphene

We present a systematic investigation of the effect of spin-orbit interaction on optical conductivity in monolayer graphene. Our key findings are: (i) level splitting at various crystal symmetry points caused by true spin as well as pseudospin of the electrons gives rise to a resonant current response; (ii) under heavy doping, the spin-orbit interaction leads to a re-entrance of finite conductivity at very low frequency which was strictly forbidden in the absence of spin-orbit coupling; (iii) deformation of band structure and the topological properties of trigonal warping are analytically identified in a low-energy conical-like approximation.

Carrier scattering from dynamical magnetoconductivity in quasineutral epitaxial graphene

The energy dependence of the electronic scattering time is probed by Landau level spectroscopy in quasineutral multilayer epitaxial graphene. From the broadening of overlapping Landau levels we find that the scattering rate 1/τ increases linearly with energy ϵ. This implies a surprising property of the Landau level spectrum in graphene-the number of resolved Landau levels remains constant with the applied magnetic field. Insights are given about possible scattering mechanisms and carrier mobilities in the graphene system investigated.

Interacting dirac fermions on a topological insulator in a magnetic field

We study the fractional quantum Hall states on the surface of a topological insulator thin film in an external magnetic field, where the Dirac fermion nature of the charge carriers have been experimentally established only recently. Our studies indicate that the fractional quantum Hall states should indeed be observable in the surface Landau levels of a topological insulator. The strength of the effect will however be different, compared to that in graphene, due to the finite thickness of the topological insulator film and due to the admixture of Landau levels of the two surfaces of the film. At a small film thickness, that mixture results in a strongly nonmonotonic dependence of the excitation gap on the film thickness. At a large enough thickness of the film, the excitation gap in the lowest two Landau levels are comparable in strength.

Characterization of near-terahertz complementary metal-oxide semiconductor circuits using a Fourier-transform interferometer

Optical methods for measuring of the emission spectra of oscillator circuits operating in the 400-600 GHz range are described. The emitted power from patch antennas included in the circuits is measured by placing the circuit in the source chamber of a Fourier-transform interferometric spectrometer. The results show that this optical technique is useful for measuring circuits pushing the frontier in operating frequency. The technique also allows the characterization of the circuit by measuring the power radiated in the fundamental and in the harmonics. This capability is useful for oscillator architectures designed to cancel the fundamental and use higher harmonics. The radiated power was measured using two techniques: direct measurement of the power by placing the device in front of a bolometer of known responsivity, and by comparison to the estimated power from blackbody sources. The latter technique showed that these circuits have higher emission than blackbody sources at the operating frequencies, and, therefore, offer potential spectroscopy applications.

Semiconducting states and transport in metallic armchair-edged graphene nanoribbons

Based on the nonequilibrium Green's function method within the tight-binding approximation scheme, through a scanning tunneling microscopy (STM) model, we study the low-energy electronic states and transport properties of carbon chains in armchair-edged graphene nanoribbons (AGNRs). We show that semiconducting AGNRs possess only semiconducting chains, while metallic ones possess not only metallic chains but also unconventional semiconducting chains located at the 3 jth (j ≠ 0) column from the edge (the first chain) due to the vanishing of the metallic component in the electron wavefunction. The two types of states for carbon chains in a metallic AGNR system are demonstrated by different density of states and STM tunneling currents. Moreover, a similar phenomenon is predicted in the edge region of very wide AGNRs. However, there is remarkable difference in the tunneling current between narrow and wide ribbons.

Renormalization group aspects of graphene

Graphene is a two-dimensional crystal of carbon atoms with fascinating electronic and morphological properties. The low-energy excitations of the neutral, clean system are described by a massless Dirac Hamiltonian in (2+1) dimensions, which also captures the main electronic and transport properties. A renormalization group analysis sheds light on the success of the free model: owing to the special form of the Fermi surface that reduces to two single points in momentum space, short-range interactions are irrelevant and only gauge interactions such as long-range Coulomb or effective disorder can play a role in the low-energy physics. We review these features and briefly discuss other aspects related to disorder and to the bilayer material along the same lines.

Electronic and optical properties of monolayer and bilayer graphene

The electronic and optical properties of monolayer and bilayer graphene are investigated to verify the effects of interlayer interactions and external magnetic field. Monolayer graphene exhibits linear bands in the low-energy region. Then the interlayer interactions in bilayers change these bands into two pairs of parabolic bands, where the lower pair is slightly overlapped and the occupied states are asymmetric with respect to the unoccupied ones. The characteristics of zero-field electronic structures are directly reflected in the Landau levels. In monolayer and bilayer graphene, these levels can be classified into one and two groups, respectively. With respect to the optical transitions between the Landau levels, bilayer graphene possesses much richer spectral features in comparison with monolayers, such as four kinds of absorption channels and double-peaked absorption lines. The explicit wave functions can further elucidate the frequency-dependent absorption rates and the complex optical selection rules. These numerical calculations would be useful in identifying the optical measurements on graphene layers.

Density of states and zero Landau Level probed through capacitance of graphene

We report capacitors in which a finite electronic compressibility of graphene dominates the electrostatics, resulting in pronounced changes in capacitance as a function of magnetic field and carrier concentration. The capacitance measurements have allowed us to accurately map the density of states D, and compare it against theoretical predictions. Landau oscillations in D are robust and zero Landau level (LL) can easily be seen at room temperature in moderate fields. The broadening of LLs is strongly affected by charge inhomogeneity that leads to zero LL being broader than other levels.

Electronic properties of a graphene antidot in magnetic fields

We report on several unusual properties of a graphene antidot created by a piecewise constant potential in a magnetic field. We find that the total probability of finding the electron in the barrier can be nearly one while it is almost zero outside the barrier. In addition, for each electron state of a graphene antidot there is a dot state with exactly the same wavefunction but with a different energy. This symmetry is a consequence of Klein tunneling of Dirac electrons. Moreover, in zigzag nanoribbons we find strong coupling between some antidot states and zigzag edge states. Experimental tests of these effects are proposed.

Thinnest two-dimensional nanomaterial-graphene for solar energy

Graphene is a rapidly rising star in materials science. This two-dimensional material exhibits unique properties, such as low resistance, excellent optical transmittance, and high mechanical and chemical stabilities. These exceptional advantages possess great promise for its potential applications in photovoltaic devices. In this Review, we present the status of graphene research for solar energy with emphasis on solar cells. Firstly, the preparation and properties of graphene are described. Secondly, applications of graphene as transparent conductive electrodes and counter electrodes are presented. Thirdly, graphene-based electron- (or hole) accepting materials for solar energy conversion are evaluated. Fourthly, the promoting effect of graphene on photovoltaic devices and the photocatalytic property of graphene-semiconductor composites are discussed. Finally, the challenges to increase the power conversion efficiency of graphene-based solar cells are explored.

Electronic properties of a biased graphene bilayer

We study, within the tight-binding approximation, the electronic properties of a graphene bilayer in the presence of an external electric field applied perpendicular to the system-a biased bilayer. The effect of the perpendicular electric field is included through a parallel plate capacitor model, with screening correction at the Hartree level. The full tight-binding description is compared with its four-band and two-band continuum approximations, and the four-band model is shown to always be a suitable approximation for the conditions realized in experiments. The model is applied to real biased bilayer devices, made out of either SiC or exfoliated graphene, and good agreement with experimental results is found, indicating that the model is capturing the key ingredients, and that a finite gap is effectively being controlled externally. Analysis of experimental results regarding the electrical noise and cyclotron resonance further suggests that the model can be seen as a good starting point for understanding the electronic properties of graphene bilayer. Also, we study the effect of electron-hole asymmetry terms, such as the second-nearest-neighbour hopping energies t' (in-plane) and γ(4) (inter-layer), and the on-site energy Δ.

Interaction-induced shift of the cyclotron resonance of graphene using infrared spectroscopy

We report a study of the cyclotron resonance (CR) transitions to and from the unusual n=0 Landau level (LL) in monolayer graphene. Unexpectedly, we find the CR transition energy exhibits large (up to 10%) and nonmonotonic shifts as a function of the LL filling factor, with the energy being largest at half filling of the n=0 level. The magnitude of these shifts, and their magnetic field dependence, suggests that an interaction-enhanced energy gap opens in the n=0 level at high magnetic fields. Such interaction effects normally have a limited impact on the CR due to Kohn's theorem [W. Kohn, Phys. Rev. 123, 1242 (1961)], which does not apply in graphene as a consequence of the underlying linear band structure.

Gradual changes in electronic properties from graphene to graphite: first-principles calculations

Calculations based on the first-principles pseudopotential plane-wave method and density functional theory are performed to investigate the electronic properties of graphene, bilayer graphene, multilayer graphene, and graphite. From an analysis of the electronic band structure close to the Fermi level, we have quantified the gradual change in the Fermi surface topology from the point-like structure for graphene to a warped triangular shape for graphite. We have also discussed the gradual change in the electron and hole effective masses and velocities as the system evolves from graphene to graphite.

How perfect can graphene be?

We have identified the cyclotron resonance response of the purest graphene ever investigated, which can be found in nature on the surface of bulk graphite, in the form of decoupled layers from the substrate material. Probing such flakes with Landau level spectroscopy in the THz range at very low magnetic fields, we demonstrate a superior electronic quality of these ultralow density layers (n_{0} approximately 3 x 10;{9} cm;{-2}) expressed by the carrier mobility in excess of 10;{7} cm;{2}/(V * s) or scattering time of tau approximately 20 ps. These parameters set new and surprisingly high limits for intrinsic properties of graphene and represent an important challenge for further developments of current graphene technologies.

On spectral properties of bilayer graphene: the effect of an SiC substrate and infrared magneto-spectroscopy

We investigate the effect of asymmetry in bilayer graphene induced by a diatomic substrate (such as SiC) and its influence on the bilayer spectrum in zero and strong magnetic fields. We also determine selection rules for inter-Landau level transitions, taking into account all four π bands.

Graphite from the viewpoint of Landau level spectroscopy: an effective graphene bilayer and monolayer

We describe an infrared transmission study of a thin layer of bulk graphite in magnetic fields up to B=34 T. Two series of absorption lines whose energy scales as sqrt[B] and B are present in the spectra and identified as contributions of massless holes at the H point and massive electrons in the vicinity of the K point, respectively. We find that the optical response of the K point electrons corresponds, over a wide range of energy and magnetic field, to a graphene bilayer with an effective interlayer coupling 2gamma_{1}, twice the value for a real graphene bilayer, which reflects the crystal ordering of bulk graphite along the c axis. The K point electrons thus behave as massive Dirac fermions with a mass enhanced twice in comparison to a true graphene bilayer.

Anomalous thermoelectric transport of Dirac particles in graphene

We report a thermoelectric study of graphene in both zero and applied magnetic fields. As a direct consequence of the linear dispersion of massless particles, we find that the Seebeck coefficient Sxx diverges with 1/sqrt[|n_{2D}|], where n_{2D} is the carrier density. We observe a very large Nernst signal S_{xy} ( approximately 50 microV/K at 8 T) at the Dirac point, and an oscillatory dependence of both Sxx and S_{xy} on n_{2D} at low temperatures. Our results underscore the anomalous thermoelectric transport in graphene, which may be used as a highly sensitive probe for impurity bands near the Dirac point.

The formation of atomic nanoclusters on graphene sheets

The formation of atomic nanoclusters on suspended graphene sheets has been investigated by employing a molecular dynamics simulation at finite temperature. Our systematic study is based on temperature-dependent molecular dynamics simulations of some transition and alkali atoms on suspended graphene sheets. We find that the transition atoms aggregate and make various size nanoclusters distributed randomly on graphene surfaces. We also report that most alkali atoms make one atomic layer on graphene sheets. Interestingly, the potassium atoms almost deposit regularly on the surface at low temperature. We expect from this behavior that the electrical conductivity of a suspended graphene doped by potassium atoms would be much higher than in the case doped by the other atoms at low temperature.