151
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Diware S, Dash S, Gebregiorgis A, Joshi RV, Strydis C, Hamdioui S, Bishnoi R. Severity-Based Hierarchical ECG Classification Using Neural Networks. IEEE TRANSACTIONS ON BIOMEDICAL CIRCUITS AND SYSTEMS 2023; 17:77-91. [PMID: 37015138 DOI: 10.1109/tbcas.2023.3242683] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
Timely detection of cardiac arrhythmia characterized by abnormal heartbeats can help in the early diagnosis and treatment of cardiovascular diseases. Wearable healthcare devices typically use neural networks to provide the most convenient way of continuously monitoring heart activity for arrhythmia detection. However, it is challenging to achieve high accuracy and energy efficiency in these smart wearable healthcare devices. In this work, we provide architecture-level solutions to deploy neural networks for cardiac arrhythmia classification. We have created a hierarchical structure after analyzing various neural network topologies where only required network components are activated to improve energy efficiency while maintaining high accuracy. In our proposed architecture, we introduce a severity-based classification approach to directly help the users of the wearable healthcare device as well as the medical professionals. Additionally, we have employed computation-in-memory based hardware to improve energy efficiency and area consumption by leveraging in-situ data processing and scalability of emerging memory technologies such as resistive random access memory (RRAM). Simulation experiments conducted using the MIT-BIH arrhythmia dataset show that the proposed architecture provides high accuracy while consuming average energy of 0.11 μJ per heartbeat classification and 0.11 mm2 area, thereby achieving 25× improvement in average energy consumption and 12× improvement in area compared to the state-of-the-art.
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152
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Khan AI, Yu H, Zhang H, Goggin JR, Kwon H, Wu X, Perez C, Neilson KM, Asheghi M, Goodson KE, Vora PM, Davydov A, Takeuchi I, Pop E. Energy Efficient Neuro-Inspired Phase-Change Memory Based on Ge 4 Sb 6 Te 7 as a Novel Epitaxial Nanocomposite. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2300107. [PMID: 36720651 DOI: 10.1002/adma.202300107] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/04/2023] [Indexed: 06/17/2023]
Abstract
Phase-change memory (PCM) is a promising candidate for neuro-inspired, data-intensive artificial intelligence applications, which relies on the physical attributes of PCM materials including gradual change of resistance states and multilevel operation with low resistance drift. However, achieving these attributes simultaneously remains a fundamental challenge for PCM materials such as Ge2 Sb2 Te5 , the most commonly used material. Here bi-directional gradual resistance changes with ≈10× resistance window using low energy pulses are demonstrated in nanoscale PCM devices based on Ge4 Sb6 Te7 , a new phase-change nanocomposite material . These devices show 13 resistance levels with low resistance drift for the first 8 levels, a resistance on/off ratio of ≈1000, and low variability. These attributes are enabled by the unique microstructural and electro-thermal properties of Ge4 Sb6 Te7 , a nanocomposite consisting of epitaxial SbTe nanoclusters within the Ge-Sb-Te matrix, and a higher crystallization but lower melting temperature than Ge2 Sb2 Te5 . These results advance the pathway toward energy-efficient analog computing using PCM.
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Affiliation(s)
- Asir Intisar Khan
- Department of Electrical Engineering, Stanford University, Stanford, CA, 94305, USA
| | - Heshan Yu
- Department of Materials Science and Engineering, University of Maryland, College Park, MD, 20742, USA
| | - Huairuo Zhang
- Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA
- Theiss Research, Inc., La Jolla, CA, 92037, USA
| | - John R Goggin
- Department of Physics and Astronomy, George Mason University, Fairfax, VA, 22030, USA
- Quantum Science and Engineering Center, George Mason University, Fairfax, VA, 22030, USA
| | - Heungdong Kwon
- Department of Mechanical Engineering, Stanford University, Stanford, CA, 94305, USA
| | - Xiangjin Wu
- Department of Electrical Engineering, Stanford University, Stanford, CA, 94305, USA
| | - Christopher Perez
- Department of Mechanical Engineering, Stanford University, Stanford, CA, 94305, USA
| | - Kathryn M Neilson
- Department of Electrical Engineering, Stanford University, Stanford, CA, 94305, USA
| | - Mehdi Asheghi
- Department of Mechanical Engineering, Stanford University, Stanford, CA, 94305, USA
| | - Kenneth E Goodson
- Department of Mechanical Engineering, Stanford University, Stanford, CA, 94305, USA
| | - Patrick M Vora
- Department of Physics and Astronomy, George Mason University, Fairfax, VA, 22030, USA
- Quantum Science and Engineering Center, George Mason University, Fairfax, VA, 22030, USA
| | - Albert Davydov
- Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA
- Quantum Science and Engineering Center, George Mason University, Fairfax, VA, 22030, USA
| | - Ichiro Takeuchi
- Department of Materials Science and Engineering, University of Maryland, College Park, MD, 20742, USA
| | - Eric Pop
- Department of Electrical Engineering, Stanford University, Stanford, CA, 94305, USA
- Department of Materials Science & Engineering, Stanford University, Stanford, CA, 94305, USA
- Precourt Institute for Energy, Stanford University, Stanford, CA, 94305, USA
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153
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Highly-scaled and fully-integrated 3-dimensional ferroelectric transistor array for hardware implementation of neural networks. Nat Commun 2023; 14:504. [PMID: 36720868 PMCID: PMC9889761 DOI: 10.1038/s41467-023-36270-0] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/20/2022] [Accepted: 01/20/2023] [Indexed: 02/02/2023] Open
Abstract
Hardware-based neural networks (NNs) can provide a significant breakthrough in artificial intelligence applications due to their ability to extract features from unstructured data and learn from them. However, realizing complex NN models remains challenging because different tasks, such as feature extraction and classification, should be performed at different memory elements and arrays. This further increases the required number of memory arrays and chip size. Here, we propose a three-dimensional ferroelectric NAND (3D FeNAND) array for the area-efficient hardware implementation of NNs. Vector-matrix multiplication is successfully demonstrated using the integrated 3D FeNAND arrays, and excellent pattern classification is achieved. By allocating each array of vertical layers in 3D FeNAND as the hidden layer of NN, each layer can be used to perform different tasks, and the classification of color-mixed patterns is achieved. This work provides a practical strategy to realize high-performance and highly efficient NN systems by stacking computation components vertically.
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154
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Lu Q, Zhao Y, Huang L, An J, Zheng Y, Yap EH. Low-Dimensional-Materials-Based Flexible Artificial Synapse: Materials, Devices, and Systems. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:373. [PMID: 36770333 PMCID: PMC9921566 DOI: 10.3390/nano13030373] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/12/2022] [Revised: 01/10/2023] [Accepted: 01/15/2023] [Indexed: 06/18/2023]
Abstract
With the rapid development of artificial intelligence and the Internet of Things, there is an explosion of available data for processing and analysis in any domain. However, signal processing efficiency is limited by the Von Neumann structure for the conventional computing system. Therefore, the design and construction of artificial synapse, which is the basic unit for the hardware-based neural network, by mimicking the structure and working mechanisms of biological synapses, have attracted a great amount of attention to overcome this limitation. In addition, a revolution in healthcare monitoring, neuro-prosthetics, and human-machine interfaces can be further realized with a flexible device integrating sensing, memory, and processing functions by emulating the bionic sensory and perceptual functions of neural systems. Until now, flexible artificial synapses and related neuromorphic systems, which are capable of responding to external environmental stimuli and processing signals efficiently, have been extensively studied from material-selection, structure-design, and system-integration perspectives. Moreover, low-dimensional materials, which show distinct electrical properties and excellent mechanical properties, have been extensively employed in the fabrication of flexible electronics. In this review, recent progress in flexible artificial synapses and neuromorphic systems based on low-dimensional materials is discussed. The potential and the challenges of the devices and systems in the application of neuromorphic computing and sensory systems are also explored.
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Affiliation(s)
- Qifeng Lu
- School of CHIPS, XJTLU Entrepreneur College (Taicang), Xi’an Jiaotong-Liverpool University, 111 Taicang Avenue, Taicang, Suzhou 215488, China
| | - Yinchao Zhao
- School of CHIPS, XJTLU Entrepreneur College (Taicang), Xi’an Jiaotong-Liverpool University, 111 Taicang Avenue, Taicang, Suzhou 215488, China
| | - Long Huang
- School of Intelligent Manufacturing Ecosystem, XJTLU Entrepreneur College (Taicang), Xi’an Jiaotong-Liverpool University, 111 Taicang Avenue, Taicang, Suzhou 215488, China
| | - Jiabao An
- School of Intelligent Manufacturing Ecosystem, XJTLU Entrepreneur College (Taicang), Xi’an Jiaotong-Liverpool University, 111 Taicang Avenue, Taicang, Suzhou 215488, China
| | - Yufan Zheng
- School of Intelligent Manufacturing Ecosystem, XJTLU Entrepreneur College (Taicang), Xi’an Jiaotong-Liverpool University, 111 Taicang Avenue, Taicang, Suzhou 215488, China
| | - Eng Hwa Yap
- School of Robotics, XJTLU Entrepreneur College (Taicang), Xi’an Jiaotong-Liverpool University, 111 Taicang Avenue, Taicang, Suzhou 215488, China
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155
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Zhang Y, Liu L, Tu B, Cui B, Guo J, Zhao X, Wang J, Yan Y. An artificial synapse based on molecular junctions. Nat Commun 2023; 14:247. [PMID: 36646674 PMCID: PMC9842743 DOI: 10.1038/s41467-023-35817-5] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/18/2022] [Accepted: 01/03/2023] [Indexed: 01/18/2023] Open
Abstract
Shrinking the size of the electronic synapse to molecular length-scale, for example, an artificial synapse directly fabricated by using individual or monolayer molecules, is important for maximizing the integration density, reducing the energy consumption, and enabling functionalities not easily achieved by other synaptic materials. Here, we show that the conductance of the self-assembled peptide molecule monolayer could be dynamically modulated by placing electrical biases, enabling us to implement basic synaptic functions. Both short-term plasticity (e.g., paired-pulse facilitation) and long-term plasticity (e.g., spike-timing-dependent plasticity) are demonstrated in a single molecular synapse. The dynamic current response is due to a combination of both chemical gating and coordination effects between Ag+ and hosting groups within peptides which adjusts the electron hopping rate through the molecular junction. In the end, based on the nonlinearity and short-term synaptic characteristics, the molecular synapses are utilized as reservoirs for waveform recognition with 100% accuracy at a small mask length.
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Affiliation(s)
- Yuchun Zhang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Lin Liu
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China.,University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Bin Tu
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Bin Cui
- School of Physics, Shandong University, Jinan, 250100, China
| | - Jiahui Guo
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China.,University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xing Zhao
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Jingyu Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China.,University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yong Yan
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China. .,University of Chinese Academy of Sciences, Beijing, 100049, China. .,Department of Chemistry, School of Chemistry and Biological Engineering, University of Science and Technology Beijing, Beijing, 100083, China.
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156
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Robin P, Emmerich T, Ismail A, Niguès A, You Y, Nam GH, Keerthi A, Siria A, Geim AK, Radha B, Bocquet L. Long-term memory and synapse-like dynamics in two-dimensional nanofluidic channels. Science 2023; 379:161-167. [PMID: 36634187 DOI: 10.1126/science.adc9931] [Citation(s) in RCA: 57] [Impact Index Per Article: 57.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/14/2023]
Abstract
Fine-tuned ion transport across nanoscale pores is key to many biological processes, including neurotransmission. Recent advances have enabled the confinement of water and ions to two dimensions, unveiling transport properties inaccessible at larger scales and triggering hopes of reproducing the ionic machinery of biological systems. Here we report experiments demonstrating the emergence of memory in the transport of aqueous electrolytes across (sub)nanoscale channels. We unveil two types of nanofluidic memristors depending on channel material and confinement, with memory ranging from minutes to hours. We explain how large time scales could emerge from interfacial processes such as ionic self-assembly or surface adsorption. Such behavior allowed us to implement Hebbian learning with nanofluidic systems. This result lays the foundation for biomimetic computations on aqueous electrolytic chips.
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Affiliation(s)
- P Robin
- Laboratoire de Physique de l'Ecole normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université de Paris, Paris, France
| | - T Emmerich
- Laboratoire de Physique de l'Ecole normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université de Paris, Paris, France
| | - A Ismail
- National Graphene Institute, The University of Manchester, Manchester, UK.,Department of Physics and Astronomy, The University of Manchester, Manchester, UK
| | - A Niguès
- Laboratoire de Physique de l'Ecole normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université de Paris, Paris, France
| | - Y You
- National Graphene Institute, The University of Manchester, Manchester, UK.,Department of Physics and Astronomy, The University of Manchester, Manchester, UK
| | - G-H Nam
- National Graphene Institute, The University of Manchester, Manchester, UK.,Department of Physics and Astronomy, The University of Manchester, Manchester, UK
| | - A Keerthi
- National Graphene Institute, The University of Manchester, Manchester, UK.,Department of Chemistry, The University of Manchester, Manchester, UK
| | - A Siria
- Laboratoire de Physique de l'Ecole normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université de Paris, Paris, France
| | - A K Geim
- National Graphene Institute, The University of Manchester, Manchester, UK.,Department of Physics and Astronomy, The University of Manchester, Manchester, UK
| | - B Radha
- National Graphene Institute, The University of Manchester, Manchester, UK.,Department of Physics and Astronomy, The University of Manchester, Manchester, UK
| | - L Bocquet
- Laboratoire de Physique de l'Ecole normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université de Paris, Paris, France
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157
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Kim G, Ko DH, Kim T, Lee S, Jung M, Lee YK, Lim S, Jo M, Eom T, Shin H, Jeong Y, Jung S, Jeon S. Power-Delay Area-Efficient Processing-In-Memory Based on Nanocrystalline Hafnia Ferroelectric Field-Effect Transistors. ACS APPLIED MATERIALS & INTERFACES 2023; 15:1463-1474. [PMID: 36576964 DOI: 10.1021/acsami.2c14867] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Ferroelectric field-effect transistors (FeFETs) have attracted enormous attention for low-power and high-density nonvolatile memory devices in processing-in-memory (PIM). However, their small memory window (MW) and limited endurance severely degrade the area efficiency and reliability of PIM devices. Herein, we overcome such challenges using key approaches covering from the material to the device and array architecture. High ferroelectricity was successfully demonstrated considering the thermodynamics and kinetics, even in a relatively thick (≥30 nm) ferroelectric material that was unexplored so far. Moreover, we employed a metal-ferroelectric-metal-insulator-semiconductor architecture that enabled desirable voltage division between the ferroelectric and the metal-oxide-semiconductor FET, leading to a large MW (∼11 V), fast operation speed (<20 ns), and high endurance (∼1011 cycles) characteristics. Subsequently, reliable and energy-efficient multiply-and-accumulation (MAC) operations were verified using a fabricated FeFET-PIM array. Furthermore, a system-level simulation demonstrated the high energy efficiency of the FeFET-PIM array, which was attributed to charge-domain computing. Finally, the proposed signed weight MAC computation achieved high accuracy on the CIFAR-10 dataset using the VGG-8 network.
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Affiliation(s)
- Giuk Kim
- School of Electrical Engineering, Korea Advanced Institute of Science & Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon34141, Korea
| | - Dong Han Ko
- School of Electrical Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul03722, Korea
| | - Taeho Kim
- School of Electrical Engineering, Korea Advanced Institute of Science & Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon34141, Korea
| | - Sangho Lee
- School of Electrical Engineering, Korea Advanced Institute of Science & Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon34141, Korea
| | - Minhyun Jung
- School of Electrical Engineering, Korea Advanced Institute of Science & Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon34141, Korea
| | - Young Kyu Lee
- School of Electrical Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul03722, Korea
| | - Sehee Lim
- School of Electrical Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul03722, Korea
| | - Minyoung Jo
- School of Electrical Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul03722, Korea
| | - Taehyong Eom
- School of Electrical Engineering, Korea Advanced Institute of Science & Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon34141, Korea
| | - Hunbeom Shin
- School of Electrical Engineering, Korea Advanced Institute of Science & Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon34141, Korea
| | - Yeongseok Jeong
- School of Electrical Engineering, Korea Advanced Institute of Science & Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon34141, Korea
| | - Seongook Jung
- School of Electrical Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul03722, Korea
| | - Sanghun Jeon
- School of Electrical Engineering, Korea Advanced Institute of Science & Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon34141, Korea
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158
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Panigrahi D, Hayakawa R, Zhong X, Aimi J, Wakayama Y. Optically Controllable Organic Logic-in-Memory: An Innovative Approach toward Ternary Data Processing and Storage. NANO LETTERS 2023; 23:319-325. [PMID: 36580275 DOI: 10.1021/acs.nanolett.2c04415] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Logic-in-memory (LIM) has emerged as an energy-efficient computing technology, as it integrates logic and memory operations in a single device architecture. Herein, a concept of ternary LIM is established. First, a p-type 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) transistor is combined with an n-type PhC2H4-benzo[de]isoquinolino[1,8-gh]quinolone diimide (PhC2-BQQDI) transistor to obtain a binary memory inverter, in which a zinc phthalocyanine-cored polystyrene (ZnPc-PS4) layer serves as a floating gate. The contrasting photoresponse of the transistors toward visible and ultraviolet light and the efficient hole-trapping ability of ZnPc-PS4 enable us to achieve an optically controllable memory operation with a high memory window of 18 V. Then, a ternary memory inverter is developed using an anti-ambipolar transistor to achieve a three-level data processing and storage system for more advanced LIM applications. Finally, low-voltage operation of the devices is achieved by employing a high-k dielectric layer, which highlights the potential of the developed LIM units for next-generation low-power electronics.
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Affiliation(s)
- Debdatta Panigrahi
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Ryoma Hayakawa
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Xinhao Zhong
- Research Center for Functional Materials, NIMS, 1-2-1 Sengen, Tsukuba 305-0047, Japan
| | - Junko Aimi
- Research Center for Functional Materials, NIMS, 1-2-1 Sengen, Tsukuba 305-0047, Japan
| | - Yutaka Wakayama
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-0044, Japan
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159
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Lee L, Chiang CH, Shen YC, Wu SC, Shih YC, Yang TY, Hsu YC, Cyu RH, Yu YJ, Hsieh SH, Chen CH, Lebedev M, Chueh YL. Rational Design on Polymorphous Phase Switching in Molybdenum Diselenide-Based Memristor Assisted by All-Solid-State Reversible Intercalation toward Neuromorphic Application. ACS NANO 2023; 17:84-93. [PMID: 36575141 DOI: 10.1021/acsnano.2c04356] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
In this work, a low-power memristor based on vertically stacked two-dimensional (2D) layered materials, achieved by plasma-assisted vapor reaction, as the switching material, with which the copper and gold metals as electrodes featured by reversible polymorphous phase changes from a conducting 1T-phase to a semiconducting 2H-one once copper cations interacted between vertical lamellar layers and vice versa, was demonstrated. Here, molybdenum diselenide was chosen as the switching material, and the reversible polymorphous phase changes activated by the intercalation of Cu cations were confirmed by pseudo-operando Raman scattering, transmission electron microscopy, and scanning photoelectron microscopy under high and low resistance states, respectively. The switching can be activated at about ±1 V with critical currents less than 10 μA with an on/off ratio approaching 100 after 100 cycles and low power consumption of ∼0.1 microwatt as well as linear weight updates controlled by the amount of intercalation. The work provides alternative feasibility of reversible and all-solid-state metal interactions, which benefits monolithic integrations of 2D materials into operative electronic circuits.
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Affiliation(s)
- Ling Lee
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Chun-Hsiu Chiang
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Ying-Chun Shen
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Shu-Chi Wu
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yu-Chuan Shih
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Tzu-Yi Yang
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yu-Chieh Hsu
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Ruei-Hong Cyu
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yi-Jen Yu
- Instrument Center, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Shang-Hsien Hsieh
- National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
| | - Chia-Hao Chen
- National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
| | - Mikhail Lebedev
- Laboratory of Functional Films and Coatings, Nikolaev Institute of inorganic chemistry SB RAS, Lavrent'ev ave. 3, Novosibirsk 630090, Russia
| | - Yu-Lun Chueh
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan
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160
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Roe DG, Ho DH, Choi YY, Choi YJ, Kim S, Jo SB, Kang MS, Ahn JH, Cho JH. Humanlike spontaneous motion coordination of robotic fingers through spatial multi-input spike signal multiplexing. Nat Commun 2023; 14:5. [PMID: 36596783 PMCID: PMC9810717 DOI: 10.1038/s41467-022-34324-3] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/18/2022] [Accepted: 10/19/2022] [Indexed: 01/05/2023] Open
Abstract
With advances in robotic technology, the complexity of control of robot has been increasing owing to fundamental signal bottlenecks and limited expressible logic state of the von Neumann architecture. Here, we demonstrate coordinated movement by a fully parallel-processable synaptic array with reduced control complexity. The synaptic array was fabricated by connecting eight ion-gel-based synaptic transistors to an ion gel dielectric. Parallel signal processing and multi-actuation control could be achieved by modulating the ionic movement. Through the integration of the synaptic array and a robotic hand, coordinated movement of the fingers was achieved with reduced control complexity by exploiting the advantages of parallel multiplexing and analog logic. The proposed synaptic control system provides considerable scope for the advancement of robotic control systems.
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Affiliation(s)
- Dong Gue Roe
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, 03722, Republic of Korea
| | - Dong Hae Ho
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul, 03722, Republic of Korea
| | - Yoon Young Choi
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA
| | - Young Jin Choi
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul, 03722, Republic of Korea
| | - Seongchan Kim
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Sae Byeok Jo
- School of Chemical Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Moon Sung Kang
- Department of Chemical and Biomolecular Engineering, Institute of Emergent Materials, Sogang University, Seoul, 04107, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, 03722, Republic of Korea
| | - Jeong Ho Cho
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul, 03722, Republic of Korea.
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161
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Zwolak JP, Taylor JM. Colloquium: Advances in automation of quantum dot devices control. REVIEWS OF MODERN PHYSICS 2023; 95:10.1103/revmodphys.95.011006. [PMID: 37051403 PMCID: PMC10088060 DOI: 10.1103/revmodphys.95.011006] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Arrays of quantum dots (QDs) are a promising candidate system to realize scalable, coupled qubit systems and serve as a fundamental building block for quantum computers. In such semiconductor quantum systems, devices now have tens of individual electrostatic and dynamical voltages that must be carefully set to localize the system into the single-electron regime and to realize good qubit operational performance. The mapping of requisite QD locations and charges to gate voltages presents a challenging classical control problem. With an increasing number of QD qubits, the relevant parameter space grows sufficiently to make heuristic control unfeasible. In recent years, there has been considerable effort to automate device control that combines script-based algorithms with machine learning (ML) techniques. In this Colloquium, a comprehensive overview of the recent progress in the automation of QD device control is presented, with a particular emphasis on silicon- and GaAs-based QDs formed in two-dimensional electron gases. Combining physics-based modeling with modern numerical optimization and ML has proven effective in yielding efficient, scalable control. Further integration of theoretical, computational, and experimental efforts with computer science and ML holds vast potential in advancing semiconductor and other platforms for quantum computing.
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Affiliation(s)
| | - Jacob M. Taylor
- Joint Quantum Institute, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
- Joint Center for Quantum Information and Computer Science, University of Maryland, College Park, Maryland 20742, USA
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162
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Chen KH, Cheng CM, Wang NF, Hung HW, Li CY, Wu S. First Order Rate Law Analysis for Reset State in Vanadium Oxide Thin Film Resistive Random Access Memory Devices. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:198. [PMID: 36616108 PMCID: PMC9824478 DOI: 10.3390/nano13010198] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/06/2022] [Revised: 12/26/2022] [Accepted: 12/30/2022] [Indexed: 06/17/2023]
Abstract
In the reset state, the decay reaction mechanism and bipolar switching properties of vanadium oxide thin film RRAM devices for LRS/HRS are investigated and discussed here. To discover the properties of I-V switching curves, the first order rate law behaviors of the reset state between the resistant variety properties and the reaction time were observed. To verify the decay reaction mechanism in the reset state, vanadium oxide thin films from RRAM devices were measured by different constant voltage sampling and exhibited the same decay reaction rate constant. Finally, the electrical conduction transfer mechanism and metallic filament forming model described by I-V switching properties of the RRAM devices were proven and investigated.
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Affiliation(s)
- Kai-Huang Chen
- Department of Electronic Engineering, Center for Environmental Toxin and Emerging-Contaminant Research, Super Micro Mass Research & Technology Center, Cheng Shiu University, Chengcing Rd., Niaosong District, Kaohsiung City 83347, Taiwan
| | - Chien-Min Cheng
- Department of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan 71005, Taiwan
| | - Na-Fu Wang
- Department of Electronic Engineering, Center for Environmental Toxin and Emerging-Contaminant Research, Super Micro Mass Research & Technology Center, Cheng Shiu University, Chengcing Rd., Niaosong District, Kaohsiung City 83347, Taiwan
| | - Hsiao-Wen Hung
- Green Energy and Environment Research Laboratories, Lighting Energy-Saving Department, Intelligent Energy-Saving Systems Division, Industrial Technology Research Institute, Hsinchu 31040, Taiwan
| | - Cheng-Ying Li
- Department of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan 71005, Taiwan
| | - Sean Wu
- Department of Chemical and Materials Engineering, Lunghwa University of Science and Technology, Taoyuan 33306, Taiwan
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163
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Jaafar AH, Shao L, Dai P, Zhang T, Han Y, Beanland R, Kemp NT, Bartlett PN, Hector AL, Huang R. 3D-structured mesoporous silica memristors for neuromorphic switching and reservoir computing. NANOSCALE 2022; 14:17170-17181. [PMID: 36380717 DOI: 10.1039/d2nr05012a] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Memristors are emerging as promising candidates for practical application in reservoir computing systems that are capable of temporal information processing. Here, we experimentally implement a physical reservoir computing system using resistive memristors based on three-dimensional (3D)-structured mesoporous silica (mSiO2) thin films fabricated by a low cost, fast and vacuum-free sol-gel technique. The in situ learning capability and a classification accuracy of 100% on a standard machine learning dataset are experimentally demonstrated. The volatile (temporal) resistive switching in diffusive memristors arises from the formation and subsequent spontaneous rupture of conductive filaments via diffusion of Ag species within the 3D-structured nanopores of the mSiO2 thin film. Besides volatile switching, the devices also exhibit a bipolar non-volatile resistive switching behavior when the devices are operated at a higher compliance current level. The implementation of mSiO2 thin films opens the route to fabricate a simple and low cost dynamic memristor with a temporal information process functionality, which is essential for neuromorphic computing applications.
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Affiliation(s)
- Ayoub H Jaafar
- School of Electronics and Computer Science, University of Southampton, Southampton, SO17 1BJ, UK.
- School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK
| | - Li Shao
- School of Chemistry, University of Southampton, Southampton, SO17 1BJ, UK.
| | - Peng Dai
- School of Electronics and Computer Science, University of Southampton, Southampton, SO17 1BJ, UK.
| | - Tongjun Zhang
- School of Electronics and Computer Science, University of Southampton, Southampton, SO17 1BJ, UK.
| | - Yisong Han
- Department of Physics, University of Warwick, Coventry, CV4 7AL, UK
| | - Richard Beanland
- Department of Physics, University of Warwick, Coventry, CV4 7AL, UK
| | - Neil T Kemp
- School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK
| | - Philip N Bartlett
- School of Chemistry, University of Southampton, Southampton, SO17 1BJ, UK.
| | - Andrew L Hector
- School of Chemistry, University of Southampton, Southampton, SO17 1BJ, UK.
| | - Ruomeng Huang
- School of Electronics and Computer Science, University of Southampton, Southampton, SO17 1BJ, UK.
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164
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Go S, Wang Q, Lim KG, Lee TH, Bajalovic N, Loke DK. Ultrafast Near-Ideal Phase-Change Memristive Physical Unclonable Functions Driven by Amorphous State Variations. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2204453. [PMID: 36372549 PMCID: PMC9798968 DOI: 10.1002/advs.202204453] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/04/2022] [Revised: 10/11/2022] [Indexed: 06/16/2023]
Abstract
There is an ever-increasing demand for next-generation devices that do not require passwords and are impervious to cloning. For traditional hardware security solutions in edge computing devices, inherent limitations are addressed by physical unclonable functions (PUF). However, realizing efficient roots of trust for resource constrained hardware remains extremely challenging, despite excellent demonstrations with conventional silicon circuits and archetypal oxide memristor-based crossbars. An attractive, down-scalable approach to design efficient cryptographic hardware is to harness memristive materials with a large-degree-of-randomness in materials state variations, but this strategy is still not well understood. Here, the utilization of high-degree-of-randomness amorphous (A) state variations associated with different operating conditions via thermal fluctuation effects is demonstrated, as well as an integrated framework for in memory computing and next generation security primitives, viz., APUF, for achieving secure key generation and device authentication. Near ideal uniformity and uniqueness without additional initial writing overheads in weak memristive A-PUF is achieved. In-memory computing empowers a strong exclusive OR (XOR-) and-repeat A PUF construction to avoid machine learning attacks, while rapid crystallization processes enable large-sized-key reconfigurability. These findings pave the way for achieving a broadly applicable security primitive for enhancing antipiracy of integrated systems and product authentication in supply chains.
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Affiliation(s)
- Shao‐Xiang Go
- Department of ScienceMathematics and TechnologySingapore University of Technology and DesignSingapore487372Singapore
| | - Qiang Wang
- Department of ScienceMathematics and TechnologySingapore University of Technology and DesignSingapore487372Singapore
| | - Kian Guan Lim
- Department of ScienceMathematics and TechnologySingapore University of Technology and DesignSingapore487372Singapore
| | - Tae Hoon Lee
- Department of EngineeringUniversity of CambridgeTrumpington StreetCambridgeCB2 1PZUK
- School of Materials Science and EngineeringKyungpook National UniversityDaegu41566Republic of Korea
| | - Natasa Bajalovic
- Department of ScienceMathematics and TechnologySingapore University of Technology and DesignSingapore487372Singapore
| | - Desmond K. Loke
- Department of ScienceMathematics and TechnologySingapore University of Technology and DesignSingapore487372Singapore
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165
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Yan X, Qian JH, Sangwan VK, Hersam MC. Progress and Challenges for Memtransistors in Neuromorphic Circuits and Systems. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108025. [PMID: 34813677 DOI: 10.1002/adma.202108025] [Citation(s) in RCA: 20] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/07/2021] [Revised: 11/07/2021] [Indexed: 06/13/2023]
Abstract
Due to the increasing importance of artificial intelligence (AI), significant recent effort has been devoted to the development of neuromorphic circuits that seek to emulate the energy-efficient information processing of the brain. While non-volatile memory (NVM) based on resistive switches, phase-change memory, and magnetic tunnel junctions has shown potential for implementing neural networks, additional multi-terminal device concepts are required for more sophisticated bio-realistic functions. Of particular interest are memtransistors based on low-dimensional nanomaterials, which are capable of electrostatically tuning memory and learning behavior at the device level. Herein, a conceptual overview of the memtransistor is provided in the context of neuromorphic circuits. Recent progress is surveyed for memtransistors and related multi-terminal NVM devices including dual-gated floating-gate memories, dual-gated ferroelectric transistors, and dual-gated van der Waals heterojunctions. The different materials systems and device architectures are classified based on the degree of control and relative tunability of synaptic behavior, with an emphasis on device concepts that harness the reduced dimensionality, weak electrostatic screening, and phase-changes properties of nanomaterials. Finally, strategies for achieving wafer-scale integration of memtransistors and multi-terminal NVM devices are delineated, with specific attention given to the materials challenges for practical neuromorphic circuits.
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Affiliation(s)
- Xiaodong Yan
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Justin H Qian
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Vinod K Sangwan
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL, 60208, USA
- Department of Chemistry, Northwestern University, Evanston, IL, 60208, USA
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166
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Wang S, Liu X, Zhou P. The Road for 2D Semiconductors in the Silicon Age. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2106886. [PMID: 34741478 DOI: 10.1002/adma.202106886] [Citation(s) in RCA: 33] [Impact Index Per Article: 16.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2021] [Revised: 10/21/2021] [Indexed: 06/13/2023]
Abstract
Continued reduction in transistor size can improve the performance of silicon integrated circuits (ICs). However, as Moore's law approaches physical limits, high-performance growth in silicon ICs becomes unsustainable, due to challenges of scaling, energy efficiency, and memory limitations. The ultrathin layers, diverse band structures, unique electronic properties, and silicon-compatible processes of 2D materials create the potential to consistently drive advanced performance in ICs. Here, the potential of fusing 2D materials with silicon ICs to minimize the challenges in silicon ICs, and to create technologies beyond the von Neumann architecture, is presented, and the killer applications for 2D materials in logic and memory devices to ease scaling, energy efficiency bottlenecks, and memory dilemmas encountered in silicon ICs are discussed. The fusion of 2D materials allows the creation of all-in-one perception, memory, and computation technologies beyond the von Neumann architecture to enhance system efficiency and remove computing power bottlenecks. Progress on the 2D ICs demonstration is summarized, as well as the technical hurdles it faces in terms of wafer-scale heterostructure growth, transfer, and compatible integration with silicon ICs. Finally, the promising pathways and obstacles to the technological advances in ICs due to the integration of 2D materials with silicon are presented.
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Affiliation(s)
- Shuiyuan Wang
- ASIC & System State Key Lab, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Xiaoxian Liu
- ASIC & System State Key Lab, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Peng Zhou
- ASIC & System State Key Lab, School of Microelectronics, Fudan University, Shanghai, 200433, China
- Frontier Institute of Chip and System, Shanghai Frontier Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
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167
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Xue F, Zhang C, Ma Y, Wen Y, He X, Yu B, Zhang X. Integrated Memory Devices Based on 2D Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2201880. [PMID: 35557021 DOI: 10.1002/adma.202201880] [Citation(s) in RCA: 19] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/27/2022] [Revised: 05/07/2022] [Indexed: 06/15/2023]
Abstract
With the advent of the Internet of Things and big data, massive data must be rapidly processed and stored within a short timeframe. This imposes stringent requirements on memory hardware implementation in terms of operation speed, energy consumption, and integration density. To fulfill these demands, 2D materials, which are excellent electronic building blocks, provide numerous possibilities for developing advanced memory device arrays with high performance, smart computing architectures, and desirable downscaling. Over the past few years, 2D-material-based memory-device arrays with different working mechanisms, including defects, filaments, charges, ferroelectricity, and spins, have been increasingly developed. These arrays can be used to implement brain-inspired computing or sensing with extraordinary performance, architectures, and functionalities. Here, recent research into integrated, state-of-the-art memory devices made from 2D materials, as well as their implications for brain-inspired computing are surveyed. The existing challenges at the array level are discussed, and the scope for future research is presented.
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Affiliation(s)
- Fei Xue
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, 310020, P. R. China
- School of Micro-Nano Electronics, Zhejiang University, Hangzhou, 311200, P. R. China
| | - Chenhui Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Yinchang Ma
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Yan Wen
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Xin He
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Bin Yu
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, 310020, P. R. China
- School of Micro-Nano Electronics, Zhejiang University, Hangzhou, 311200, P. R. China
| | - Xixiang Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
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168
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Zrinski I, Zavašnik J, Duchoslav J, Hassel AW, Mardare AI. Threshold Switching in Forming-Free Anodic Memristors Grown on Hf-Nb Combinatorial Thin-Film Alloys. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3944. [PMID: 36432230 PMCID: PMC9697845 DOI: 10.3390/nano12223944] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/22/2022] [Revised: 11/03/2022] [Accepted: 11/05/2022] [Indexed: 06/16/2023]
Abstract
The development of novel materials with coexisting volatile threshold and non-volatile memristive switching is crucial for neuromorphic applications. Hence, the aim of this work was to investigate the memristive properties of oxides in a Hf-Nb thin-film combinatorial system deposited by sputtering on Si substrates. The active layer was grown anodically on each Hf-Nb alloy from the library, whereas Pt electrodes were deposited as the top electrodes. The devices grown on Hf-45 at.% Nb alloys showed improved memristive performances reaching resistive state ratios up to a few orders of magnitude and achieving multi-level switching behavior while consuming low power in comparison with memristors grown on pure metals. The coexistence of threshold and resistive switching is dependent upon the current compliance regime applied during memristive studies. Such behaviors were explained by the structure of the mixed oxides investigated by TEM and XPS. The mixed oxides, with HfO2 crystallites embedded in quasi amorphous and stoichiometrically non-uniform Nb oxide regions, were found to be favorable for the formation of conductive filaments as a necessary step toward memristive behavior. Finally, metal-insulator-metal structures grown on the respective alloys can be considered as relevant candidates for the future fabrication of anodic high-density in-memory computing systems for neuromorphic applications.
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Affiliation(s)
- Ivana Zrinski
- Institute of Chemical Technology of Inorganic Materials, Johannes Kepler University Linz, Altenberger Street, 69, 4040 Linz, Austria
| | - Janez Zavašnik
- Jožef Stefan Institute, Jamova Cesta 39, 1000 Ljubljana, Slovenia
| | - Jiri Duchoslav
- Center for Surface and Nanoanalytics, Johannes Kepler University Linz, Altenberger Street, 69, 4040 Linz, Austria
| | - Achim Walter Hassel
- Institute of Chemical Technology of Inorganic Materials, Johannes Kepler University Linz, Altenberger Street, 69, 4040 Linz, Austria
- Danube Private University, Steiner Landstrasse 124, 3500 Krems-Stein, Austria
| | - Andrei Ionut Mardare
- Institute of Chemical Technology of Inorganic Materials, Johannes Kepler University Linz, Altenberger Street, 69, 4040 Linz, Austria
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169
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Bae JY, Han MH, Lee SJ, Kim ES, Lee K, Lee GS, Park JH, Park JG. Silicon Wafer CMP Slurry Using a Hydrolysis Reaction Accelerator with an Amine Functional Group Remarkably Enhances Polishing Rate. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3893. [PMID: 36364668 PMCID: PMC9656662 DOI: 10.3390/nano12213893] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/11/2022] [Revised: 10/28/2022] [Accepted: 11/03/2022] [Indexed: 06/16/2023]
Abstract
Recently, as an alternative solution for overcoming the scaling-down limitations of logic devices with design length of less than 3 nm and enhancing DRAM operation performance, 3D heterogeneous packaging technology has been intensively researched, essentially requiring Si wafer polishing at a very high Si polishing rate (500 nm/min) by accelerating the degree of the hydrolysis reaction (i.e., Si-O-H) on the polished Si wafer surface during CMP. Unlike conventional hydrolysis reaction accelerators (i.e., sodium hydroxide and potassium hydroxide), a novel hydrolysis reaction accelerator with amine functional groups (i.e., 552.8 nm/min for ethylenediamine) surprisingly presented an Si wafer polishing rate >3 times higher than that of conventional hydrolysis reaction accelerators (177.1 nm/min for sodium hydroxide). This remarkable enhancement of the Si wafer polishing rate for ethylenediamine was principally the result of (i) the increased hydrolysis reaction, (ii) the enhanced degree of adsorption of the CMP slurry on the polished Si wafer surface during CMP, and (iii) the decreased electrostatic repulsive force between colloidal silica abrasives and the Si wafer surface. A higher ethylenediamine concentration in the Si wafer CMP slurry led to a higher extent of hydrolysis reaction and degree of adsorption for the slurry and a lower electrostatic repulsive force; thus, a higher ethylenediamine concentration resulted in a higher Si wafer polishing rate. With the aim of achieving further improvements to the Si wafer polishing rates using Si wafer CMP slurry including ethylenediamine, the Si wafer polishing rate increased remarkably and root-squarely with the increasing ethylenediamine concentration.
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Affiliation(s)
- Jae-Young Bae
- Department of Energy Engineering, Hanyang University, Seoul 04763, Korea
| | - Man-Hyup Han
- Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 04763, Korea
| | - Seung-Jae Lee
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Korea
| | - Eun-Seong Kim
- Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 04763, Korea
| | - Kyungsik Lee
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Korea
| | - Gon-sub Lee
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Korea
| | | | - Jea-Gun Park
- Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 04763, Korea
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Korea
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170
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Sun Y, He N, Yuan Q, Wang Y, Dong Y, Wen D. Ferroelectric Polarized in Transistor Channel Polarity Modulation for Reward-Modulated Spike-Time-Dependent Plasticity Application. J Phys Chem Lett 2022; 13:10056-10064. [PMID: 36264655 DOI: 10.1021/acs.jpclett.2c03007] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Reward signals reflect the developmental tendency of reinforcement learning (RL) agents. Reward-modulated spike-time-dependent plasticity (R-STDP) is an efficient and concise information processing feature in RL. However, the physical construction of R-STDP normally demands complex circuit design engineering, resulting in large power consumption and large area. In this work, we studied the role of ferroelectric polarization in the modulation of carbon nanotube transistor channel polarity. Furthermore, we applied a modulating channel method to construct a 2T synaptic component by spin-coating technology. Based on the nonvolatility of ferroelectric polarization, the synaptic component constructed has the characteristics of reconfigurable polarity. One channel could be modulated to n-type and the other to p-type. One modulated channel was used to perform the STDP function when the reward signal arrived, and the other modulated channel was used to perform the anti-STDP function when the punishment signal arrived. Finally, R-STDP learning rules are implemented on hardware. This work provides a strategy for hardware construction of RL.
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Affiliation(s)
- Yanmei Sun
- School of Electronic Engineering, Heilongjiang University, Harbin 150080, China
- Heilongjiang Provincial Key Laboratory of Micro-nano Sensitive Devices and Systems, Heilongjiang University, Harbin 150080, China
- HLJ Province Key Laboratories of Senior-Education for Electronic Engineering, Heilongjiang University, Harbin 150080, China
| | - Nian He
- School of Electronic Engineering, Heilongjiang University, Harbin 150080, China
- Heilongjiang Provincial Key Laboratory of Micro-nano Sensitive Devices and Systems, Heilongjiang University, Harbin 150080, China
- HLJ Province Key Laboratories of Senior-Education for Electronic Engineering, Heilongjiang University, Harbin 150080, China
| | - Qi Yuan
- School of Electronic Engineering, Heilongjiang University, Harbin 150080, China
- Heilongjiang Provincial Key Laboratory of Micro-nano Sensitive Devices and Systems, Heilongjiang University, Harbin 150080, China
- HLJ Province Key Laboratories of Senior-Education for Electronic Engineering, Heilongjiang University, Harbin 150080, China
| | - Yufei Wang
- School of Electronic Engineering, Heilongjiang University, Harbin 150080, China
- Heilongjiang Provincial Key Laboratory of Micro-nano Sensitive Devices and Systems, Heilongjiang University, Harbin 150080, China
- HLJ Province Key Laboratories of Senior-Education for Electronic Engineering, Heilongjiang University, Harbin 150080, China
| | - Yan Dong
- School of Electronic Engineering, Heilongjiang University, Harbin 150080, China
- Heilongjiang Provincial Key Laboratory of Micro-nano Sensitive Devices and Systems, Heilongjiang University, Harbin 150080, China
- HLJ Province Key Laboratories of Senior-Education for Electronic Engineering, Heilongjiang University, Harbin 150080, China
| | - Dianzhong Wen
- School of Electronic Engineering, Heilongjiang University, Harbin 150080, China
- Heilongjiang Provincial Key Laboratory of Micro-nano Sensitive Devices and Systems, Heilongjiang University, Harbin 150080, China
- HLJ Province Key Laboratories of Senior-Education for Electronic Engineering, Heilongjiang University, Harbin 150080, China
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171
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Chen Y, Li D, Ren H, Tang Y, Liang K, Wang Y, Li F, Song C, Guan J, Chen Z, Lu X, Xu G, Li W, Liu S, Zhu B. Highly Linear and Symmetric Synaptic Memtransistors Based on Polarization Switching in Two-Dimensional Ferroelectric Semiconductors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2203611. [PMID: 36156393 DOI: 10.1002/smll.202203611] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/10/2022] [Revised: 09/01/2022] [Indexed: 06/16/2023]
Abstract
Brain-inspired neuromorphic computing hardware based on artificial synapses offers efficient solutions to perform computational tasks. However, the nonlinearity and asymmetry of synaptic weight updates in reported artificial synapses have impeded achieving high accuracy in neural networks. Here, this work develops a synaptic memtransistor based on polarization switching in a two-dimensional (2D) ferroelectric semiconductor (FES) of α-In2 Se3 for neuromorphic computing. The α-In2 Se3 memtransistor exhibits outstanding synaptic characteristics, including near-ideal linearity and symmetry and a large number of programmable conductance states, by taking the advantages of both memtransistor configuration and electrically configurable polarization states in the FES channel. As a result, the α-In2 Se3 memtransistor-type synapse reaches high accuracy of 97.76% for digit patterns recognition task in simulated artificial neural networks. This work opens new opportunities for using multiterminal FES memtransistors in advanced neuromorphic electronics.
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Affiliation(s)
- Yitong Chen
- School of Materials and Engineering, Zhejiang University, Hangzhou, 310027, China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024, China
| | - Dingwei Li
- School of Materials and Engineering, Zhejiang University, Hangzhou, 310027, China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024, China
| | - Huihui Ren
- School of Materials and Engineering, Zhejiang University, Hangzhou, 310027, China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024, China
| | - Yingjie Tang
- School of Materials and Engineering, Zhejiang University, Hangzhou, 310027, China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024, China
| | - Kun Liang
- School of Materials and Engineering, Zhejiang University, Hangzhou, 310027, China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024, China
| | - Yan Wang
- School of Materials and Engineering, Zhejiang University, Hangzhou, 310027, China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024, China
| | - Fanfan Li
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024, China
| | - Chunyan Song
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024, China
| | - Jiaqi Guan
- Instrumentation and Service Centre for Physical Sciences, Westlake University, Hangzhou, 310024, China
| | - Zhong Chen
- Instrumentation and Service Centre for Molecular Sciences, Westlake University, Hangzhou, 310024, China
| | - Xingyu Lu
- Instrumentation and Service Centre for Molecular Sciences, Westlake University, Hangzhou, 310024, China
| | - Guangwei Xu
- School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China
| | - Wenbin Li
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, 310024, China
| | - Shi Liu
- School of Science, Westlake University, Hangzhou, Zhejiang, 310024, China
| | - Bowen Zhu
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, 310024, China
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172
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Winkler R, Zintler A, Petzold S, Piros E, Kaiser N, Vogel T, Nasiou D, McKenna KP, Molina‐Luna L, Alff L. Controlling the Formation of Conductive Pathways in Memristive Devices. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2201806. [PMID: 36073844 PMCID: PMC9685438 DOI: 10.1002/advs.202201806] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/28/2022] [Revised: 06/21/2022] [Indexed: 06/15/2023]
Abstract
Resistive random-access memories are promising candidates for novel computer architectures such as in-memory computing, multilevel data storage, and neuromorphics. Their working principle is based on electrically stimulated materials changes that allow access to two (digital), multiple (multilevel), or quasi-continuous (analog) resistive states. However, the stochastic nature of forming and switching the conductive pathway involves complex atomistic defect configurations resulting in considerable variability. This paper reveals that the intricate interplay of 0D and 2D defects can be engineered to achieve reproducible and controlled low-voltage formation of conducting filaments. The author find that the orientation of grain boundaries in polycrystalline HfOx is directly related to the required forming voltage of the conducting filaments, unravelling a neglected origin of variability. Based on the realistic atomic structure of grain boundaries obtained from ultra-high resolution imaging combined with first-principles calculations including local strain, this paper shows how oxygen vacancy segregation energies and the associated electronic states in the vicinity of the Fermi level govern the formation of conductive pathways in memristive devices. These findings are applicable to non-amorphous valence change filamentary type memristive device. The results demonstrate that a fundamental atomistic understanding of defect chemistry is pivotal to design memristors as key element of future electronics.
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Affiliation(s)
- Robert Winkler
- Advanced Thin Film Technology DivisionInstitute of Materials ScienceTechnical University of DarmstadtAlarich‐Weiss‐Straße 264287DarmstadtGermany
- Advanced Electron Microscopy DivisionInstitute of Materials ScienceTechnical University of DarmstadtAlarich‐Weiss‐Straße 264287DarmstadtGermany
| | - Alexander Zintler
- Advanced Electron Microscopy DivisionInstitute of Materials ScienceTechnical University of DarmstadtAlarich‐Weiss‐Straße 264287DarmstadtGermany
| | - Stefan Petzold
- Advanced Thin Film Technology DivisionInstitute of Materials ScienceTechnical University of DarmstadtAlarich‐Weiss‐Straße 264287DarmstadtGermany
| | - Eszter Piros
- Advanced Thin Film Technology DivisionInstitute of Materials ScienceTechnical University of DarmstadtAlarich‐Weiss‐Straße 264287DarmstadtGermany
| | - Nico Kaiser
- Advanced Thin Film Technology DivisionInstitute of Materials ScienceTechnical University of DarmstadtAlarich‐Weiss‐Straße 264287DarmstadtGermany
| | - Tobias Vogel
- Advanced Thin Film Technology DivisionInstitute of Materials ScienceTechnical University of DarmstadtAlarich‐Weiss‐Straße 264287DarmstadtGermany
| | - Déspina Nasiou
- Advanced Electron Microscopy DivisionInstitute of Materials ScienceTechnical University of DarmstadtAlarich‐Weiss‐Straße 264287DarmstadtGermany
| | | | - Leopoldo Molina‐Luna
- Advanced Electron Microscopy DivisionInstitute of Materials ScienceTechnical University of DarmstadtAlarich‐Weiss‐Straße 264287DarmstadtGermany
| | - Lambert Alff
- Advanced Thin Film Technology DivisionInstitute of Materials ScienceTechnical University of DarmstadtAlarich‐Weiss‐Straße 264287DarmstadtGermany
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173
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Compressing convolutional neural networks with hierarchical Tucker-2 decomposition. Appl Soft Comput 2022. [DOI: 10.1016/j.asoc.2022.109856] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/27/2022]
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174
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Fu EB, Liu Y, Hou XR, Feng Y, Yang CL, Shao Y. Visible-Light-Stimulated Synaptic Phototransistors Based on CdSe Quantum Dot/In-Ga-Zn-O Hybrid Channels. NANOSCALE RESEARCH LETTERS 2022; 17:102. [PMID: 36301360 PMCID: PMC9613833 DOI: 10.1186/s11671-022-03739-8] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/01/2022] [Accepted: 10/05/2022] [Indexed: 05/15/2023]
Abstract
Light-stimulated synaptic devices are promising candidates for the development of artificial intelligence systems because of their unique properties, which include broad bandwidths, low power consumption, and superior parallelism. The key to develop such devices is the realization of photoelectric synaptic behavior in them. In this work, visible-light-stimulated synaptic transistors based on CdSe quantum dot (CdSe QD)/amorphous In-Ga-Zn-O hybrid channels are proposed. This design can not only improve the charge separation efficiency of the photogenerated carriers, but also can induce delayed decay of the photocurrent. The improved charge separation efficiency enhances the photoelectric properties significantly, while the delayed decay of the photocurrent led to the realization of photoelectric synaptic behaviors. This simple and efficient method of fabricating light-stimulated phototransistors may inspire new research progress into the development of artificial intelligence systems.
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Affiliation(s)
- En-bo Fu
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055 China
- Nano Science and Technology Institute, University of Science and Technology of China, Suzhou, 215123 China
| | - Yu Liu
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055 China
- Nano Science and Technology Institute, University of Science and Technology of China, Suzhou, 215123 China
| | - Xiang-Rui Hou
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055 China
- Nano Science and Technology Institute, University of Science and Technology of China, Suzhou, 215123 China
| | - Ye Feng
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055 China
| | - Chun-lei Yang
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055 China
| | - Yan Shao
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055 China
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175
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Liu S, Xiao TP, Kwon J, Debusschere BJ, Agarwal S, Incorvia JAC, Bennett CH. Bayesian neural networks using magnetic tunnel junction-based probabilistic in-memory computing. FRONTIERS IN NANOTECHNOLOGY 2022. [DOI: 10.3389/fnano.2022.1021943] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022] Open
Abstract
Bayesian neural networks (BNNs) combine the generalizability of deep neural networks (DNNs) with a rigorous quantification of predictive uncertainty, which mitigates overfitting and makes them valuable for high-reliability or safety-critical applications. However, the probabilistic nature of BNNs makes them more computationally intensive on digital hardware and so far, less directly amenable to acceleration by analog in-memory computing as compared to DNNs. This work exploits a novel spintronic bit cell that efficiently and compactly implements Gaussian-distributed BNN values. Specifically, the bit cell combines a tunable stochastic magnetic tunnel junction (MTJ) encoding the trained standard deviation and a multi-bit domain-wall MTJ device independently encoding the trained mean. The two devices can be integrated within the same array, enabling highly efficient, fully analog, probabilistic matrix-vector multiplications. We use micromagnetics simulations as the basis of a system-level model of the spintronic BNN accelerator, demonstrating that our design yields accurate, well-calibrated uncertainty estimates for both classification and regression problems and matches software BNN performance. This result paves the way to spintronic in-memory computing systems implementing trusted neural networks at a modest energy budget.
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176
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Wang D, Wang Z, Xu N, Liu L, Lin H, Zhao X, Jiang S, Lin W, Gao N, Liu M, Xing G. Synergy of Spin-Orbit Torque and Built-In Field in Magnetic Tunnel Junctions with Tilted Magnetic Anisotropy: Toward Tunable and Reliable Spintronic Neurons. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2203006. [PMID: 35927016 PMCID: PMC9596820 DOI: 10.1002/advs.202203006] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/21/2022] [Revised: 07/09/2022] [Indexed: 06/15/2023]
Abstract
Owing to programmable nonlinear dynamics, magnetic domain wall (DW)-based devices can be configured to function as spintronic neurons, promising to execute sophisticated tasks as a human brain. Developing energy-efficient, CMOS compatible, reliable, and tunable spintronic neurons to emulate brain-inspired processes has been a key research goal for decades. Here, a new type of DW device is reported with biological neuron characteristics driven by the synergistic interaction between spin-orbit torque and built-in field (Hbuilt-in ) in magnetic tunnel junctions, enabling time- and energy-efficient leaky-integrate-and-fire and self-reset neuromorphic implementations. A tilted magnetic anisotropic free layer is proposed and further executed to mitigate the DW retrograde motion by suppressing the Walker breakdown. Complementary experiments and micromagnetic co-simulation results show that the integrating/leaking time of the developed spintronic neuron can be tuned to 12/15 ns with an integrating power consumption of 65 µW, which is 36× and 1.84× time and energy efficient than the state-of-the-art alternatives, respectively. Moreover, the spatial distribution of Hbuilt-in can be modulated by adjusting the width and compensation of the reference layer, facilitating tunable activation function generator exploration. Such architecture demonstrates great potential in both fundamental research and new trajectories of technology advancement for spintronic neuron hardware applications.
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Affiliation(s)
- Di Wang
- Key Laboratory of Microelectronic Devices and Integrated TechnologyInstitute of MicroelectronicsChinese Academy of SciencesBeijing100029China
- School of Integrated CircuitsUniversity of Chinese Academy of SciencesBeijing100049China
| | - Ziwei Wang
- Key Laboratory of Microelectronic Devices and Integrated TechnologyInstitute of MicroelectronicsChinese Academy of SciencesBeijing100029China
- School of Integrated CircuitsUniversity of Chinese Academy of SciencesBeijing100049China
| | - Nuo Xu
- Department of Electrical Engineering and Computer SciencesUniversity of CaliforniaBerkeleyCA94720USA
| | - Long Liu
- Key Laboratory of Microelectronic Devices and Integrated TechnologyInstitute of MicroelectronicsChinese Academy of SciencesBeijing100029China
- School of Integrated CircuitsUniversity of Chinese Academy of SciencesBeijing100049China
| | - Huai Lin
- Key Laboratory of Microelectronic Devices and Integrated TechnologyInstitute of MicroelectronicsChinese Academy of SciencesBeijing100029China
- School of Integrated CircuitsUniversity of Chinese Academy of SciencesBeijing100049China
| | - Xuefeng Zhao
- Key Laboratory of Microelectronic Devices and Integrated TechnologyInstitute of MicroelectronicsChinese Academy of SciencesBeijing100029China
- School of MicroelectronicsUniversity of Science and Technology of ChinaHefei230026China
| | - Sheng Jiang
- School of MicroelectronicsNorthwestern Polytechnical UniversityXi'an710072China
| | - Weinan Lin
- Department of PhysicsXiamen UniversityXiamen361005China
| | - Nan Gao
- School of MicroelectronicsUniversity of Science and Technology of ChinaHefei230026China
| | - Ming Liu
- School of Integrated CircuitsUniversity of Chinese Academy of SciencesBeijing100049China
| | - Guozhong Xing
- Key Laboratory of Microelectronic Devices and Integrated TechnologyInstitute of MicroelectronicsChinese Academy of SciencesBeijing100029China
- School of Integrated CircuitsUniversity of Chinese Academy of SciencesBeijing100049China
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177
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Liu X, Ting J, He Y, Fiagbenu MMA, Zheng J, Wang D, Frost J, Musavigharavi P, Esteves G, Kisslinger K, Anantharaman SB, Stach EA, Olsson RH, Jariwala D. Reconfigurable Compute-In-Memory on Field-Programmable Ferroelectric Diodes. NANO LETTERS 2022; 22:7690-7698. [PMID: 36121208 DOI: 10.1021/acs.nanolett.2c03169] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The deluge of sensors and data generating devices has driven a paradigm shift in modern computing from arithmetic-logic centric to data-centric processing. Data-centric processing require innovations at the device level to enable novel compute-in-memory (CIM) operations. A key challenge in the construction of CIM architectures is the conflicting trade-off between the performance and their flexibility for various essential data operations. Here, we present a transistor-free CIM architecture that permits storage, search, and neural network operations on sub-50 nm thick Aluminum Scandium Nitride ferroelectric diodes (FeDs). Our circuit designs and devices can be directly integrated on top of Silicon microprocessors in a scalable process. By leveraging the field-programmability, nonvolatility, and nonlinearity of FeDs, search operations are demonstrated with a cell footprint <0.12 μm2 when projected onto 45 nm node technology. We further demonstrate neural network operations with 4-bit operation using FeDs. Our results highlight FeDs as candidates for efficient and multifunctional CIM platforms.
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Affiliation(s)
- Xiwen Liu
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - John Ting
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Yunfei He
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | | | - Jeffrey Zheng
- Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Dixiong Wang
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Jonathan Frost
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Pariasadat Musavigharavi
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
- Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Giovanni Esteves
- Microsystems Engineering, Science and Applications (MESA), Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
| | - Kim Kisslinger
- Brookhaven National Laboratory, Center for Functional Nanomaterials, Upton, New York 11973, United States
| | - Surendra B Anantharaman
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Eric A Stach
- Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
- Laboratory for Research on the Structure of Matter, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Roy H Olsson
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Deep Jariwala
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
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178
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Jin T, Mao J, Gao J, Han C, Loh KP, Wee ATS, Chen W. Ferroelectrics-Integrated Two-Dimensional Devices toward Next-Generation Electronics. ACS NANO 2022; 16:13595-13611. [PMID: 36099580 DOI: 10.1021/acsnano.2c07281] [Citation(s) in RCA: 23] [Impact Index Per Article: 11.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Ferroelectric materials play an important role in a wide spectrum of semiconductor technologies and device applications. Two-dimensional (2D) van der Waals (vdW) ferroelectrics with surface-insensitive ferroelectricity that is significantly different from their traditional bulk counterparts have further inspired intensive interest. Integration of ferroelectrics into 2D-layered-material-based devices is expected to offer intriguing working principles and add desired functionalities for next-generation electronics. Herein, fundamental properties of ferroelectric materials that are compatible with 2D devices are introduced, followed by a critical review of recent advances on the integration of ferroelectrics into 2D devices. Representative device architectures and corresponding working mechanisms are discussed, such as ferroelectrics/2D semiconductor heterostructures, 2D ferroelectric tunnel junctions, and 2D ferroelectric diodes. By leveraging the favorable properties of ferroelectrics, a variety of functional 2D devices including ferroelectric-gated negative capacitance field-effect transistors, programmable devices, nonvolatile memories, and neuromorphic devices are highlighted, where the application of 2D vdW ferroelectrics is particularly emphasized. This review provides a comprehensive understanding of ferroelectrics-integrated 2D devices and discusses the challenges of applying them into commercial electronic circuits.
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Affiliation(s)
- Tengyu Jin
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, P. R. China
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Jingyu Mao
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Jing Gao
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Cheng Han
- SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Kian Ping Loh
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, P. R. China
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Andrew T S Wee
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Wei Chen
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, P. R. China
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
- National University of Singapore (Suzhou) Research Institute, 377 Lin Quan Street, Suzhou Industrial Park, Suzhou 215123, P. R. China
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179
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Sivan M, Leong JF, Ghosh J, Tang B, Pan J, Zamburg E, Thean AVY. Physical Insights into Vacancy-Based Memtransistors: Toward Power Efficiency, Reliable Operation, and Scalability. ACS NANO 2022; 16:14308-14322. [PMID: 36103401 PMCID: PMC10653274 DOI: 10.1021/acsnano.2c04504] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/08/2022] [Accepted: 09/06/2022] [Indexed: 06/15/2023]
Abstract
Memtransistors that combine the properties of transistor and memristor hold significant promise for in-memory computing. While superior data storage capability is achieved in memtransistors through gate voltage-induced conductance modulation, the lateral device configuration would not only result in high write bias, which compromises the power efficiency, but also suffers from unsuccessful memory reset that leads to reliability concerns. To circumvent such performance limitations, an advanced physics-based model is required to uncover the dynamic resistive switching behavior and deduce the key driving parameters for the switching process. This work demonstrates a self-consistent physics-based model which incorporates the often-overlooked effects of lattice temperature, vacancy dynamics, and channel electrostatics to accurately solve the interaction between gate potential, ions, and carriers on the memristive switching mechanism. The completed model is carefully calibrated with an ambipolar WSe2 memtransistor and hence enables the investigation of the carrier polarity effect (electrons vs holes) on vacancy transport. Nevertheless, the validity of the model can be extended to different materials by a simple material-dependent parameter modification. Building upon the existing understanding of Schottky barrier height modulation, our study reveals three key insights─leveraging threshold voltage shifts to lower write bias; optimizing lattice temperature distribution and read bias polarity to achieve successful memory state recovery; engineering contact work function to overcome the detrimental parasitic current flow in short channel ambipolar memtransistors. Therefore, understanding the significant correlation between the switching mechanisms, different material systems, and device structures allows performance optimization of operating modes and device designs for future memtransistors-based computing systems.
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Affiliation(s)
- Maheswari Sivan
- Department of Electrical
and Computer Engineering, National University
of Singapore, Singapore 117576, Singapore
| | - Jin Feng Leong
- Department of Electrical
and Computer Engineering, National University
of Singapore, Singapore 117576, Singapore
| | - Joydeep Ghosh
- Department of Electrical
and Computer Engineering, National University
of Singapore, Singapore 117576, Singapore
| | - Baoshan Tang
- Department of Electrical
and Computer Engineering, National University
of Singapore, Singapore 117576, Singapore
| | - Jieming Pan
- Department of Electrical
and Computer Engineering, National University
of Singapore, Singapore 117576, Singapore
| | - Evgeny Zamburg
- Department of Electrical
and Computer Engineering, National University
of Singapore, Singapore 117576, Singapore
| | - Aaron Voon-Yew Thean
- Department of Electrical
and Computer Engineering, National University
of Singapore, Singapore 117576, Singapore
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180
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Chen Y, Wang H, Luo F, Montes-García V, Liu Z, Samorì P. Nanofloating gate modulated synaptic organic light-emitting transistors for reconfigurable displays. SCIENCE ADVANCES 2022; 8:eabq4824. [PMID: 36103533 PMCID: PMC9473570 DOI: 10.1126/sciadv.abq4824] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/11/2022] [Accepted: 07/28/2022] [Indexed: 06/15/2023]
Abstract
The use of postsynaptic current to drive long-lasting luminescence holds a disruptive potential for harnessing the next-generation of smart displays. Multiresponsive long afterglow emission can be achieved by integrating light-emitting polymers in electric spiked transistors trigged by distinct presynaptic signals inputs. Here, we report a highly effective electric spiked long afterglow organic light-emitting transistor (LAOLET), whose operation relies on a nanofloating gate architecture. Long afterglow emission with reconfigurable brightness and retention time is observed upon applying specific positive gate voltage spiked. Conversely, when negative gate voltage stimulus is applied, these LAOLETs function as click-on display. Interestingly, upon endowing the device with force sensing capabilities, it can operate as a long afterglow pressure sensor that emits long-lasting green light subsequently to a controlled extrusion action.
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181
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In-sensor image memorization and encoding via optical neurons for bio-stimulus domain reduction toward visual cognitive processing. Nat Commun 2022; 13:5223. [PMID: 36064944 PMCID: PMC9445171 DOI: 10.1038/s41467-022-32790-3] [Citation(s) in RCA: 16] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/30/2022] [Accepted: 08/15/2022] [Indexed: 12/03/2022] Open
Abstract
As machine vision technology generates large amounts of data from sensors, it requires efficient computational systems for visual cognitive processing. Recently, in-sensor computing systems have emerged as a potential solution for reducing unnecessary data transfer and realizing fast and energy-efficient visual cognitive processing. However, they still lack the capability to process stored images directly within the sensor. Here, we demonstrate a heterogeneously integrated 1-photodiode and 1 memristor (1P-1R) crossbar for in-sensor visual cognitive processing, emulating a mammalian image encoding process to extract features from the input images. Unlike other neuromorphic vision processes, the trained weight values are applied as an input voltage to the image-saved crossbar array instead of storing the weight value in the memristors, realizing the in-sensor computing paradigm. We believe the heterogeneously integrated in-sensor computing platform provides an advanced architecture for real-time and data-intensive machine-vision applications via bio-stimulus domain reduction. Designing in-sensor computing systems remains a challenge. Here, the authors demonstrate artificial optical neurons based on the in-sensor computing architecture that fuses sensory and computing nodes into a single platform capable of reducing data transfer time and energy for encoding and classification.
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182
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Jiang TT, Wang XD, Wang JJ, Zhang HY, Lu L, Jia C, Wuttig M, Mazzarello R, Zhang W, Ma E. In situ characterization of vacancy ordering in Ge-Sb-Te phase-change memory alloys. FUNDAMENTAL RESEARCH 2022. [DOI: 10.1016/j.fmre.2022.09.010] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022] Open
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183
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Li R, Song M, Guo Z, Li S, Duan W, Zhang S, Tian Y, Chen Z, Bao Y, Cui J, Xu Y, Wang Y, Tong W, Yuan Z, Cui Y, Xi L, Feng D, Yang X, Zou X, Hong J, You L. In-Memory Mathematical Operations with Spin-Orbit Torque Devices. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2202478. [PMID: 35811307 PMCID: PMC9443454 DOI: 10.1002/advs.202202478] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/28/2022] [Revised: 05/28/2022] [Indexed: 06/15/2023]
Abstract
Analog arithmetic operations are the most fundamental mathematical operations used in image and signal processing as well as artificial intelligence (AI). In-memory computing (IMC) offers a high performance and energy-efficient computing paradigm. To date, in-memory analog arithmetic operations with emerging nonvolatile devices are usually implemented using discrete components, which limits the scalability and blocks large scale integration. Here, a prototypical implementation of in-memory analog arithmetic operations (summation, subtraction and multiplication) is experimentally demonstrated, based on in-memory electrical current sensing units using spin-orbit torque (SOT) devices. The proposed structures for analog arithmetic operations are smaller than the state-of-the-art complementary metal oxide semiconductor (CMOS) counterparts by several orders of magnitude. Moreover, data to be processed and computing results can be locally stored, or the analog computing can be done in the nonvolatile SOT devices, which are exploited to experimentally implement the image edge detection and signal amplitude modulation with a simple structure. Furthermore, an artificial neural network (ANN) with SOT devices based synapses is constructed to realize pattern recognition with high accuracy of ≈95%.
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Affiliation(s)
- Ruofan Li
- School of Optical and Electronic Information & Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074China
| | - Min Song
- Faculty of Physics and Electronic ScienceHubei UniversityWuhan430062China
| | - Zhe Guo
- School of Optical and Electronic Information & Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074China
| | - Shihao Li
- School of Optical and Electronic Information & Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074China
| | - Wei Duan
- Faculty of Physics and Electronic ScienceHubei UniversityWuhan430062China
| | - Shuai Zhang
- School of Optical and Electronic Information & Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074China
| | - Yufeng Tian
- School of PhysicsShandong UniversityJinan250100China
| | - Zhenjiang Chen
- School of Optical and Electronic Information & Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074China
| | - Yi Bao
- School of Optical and Electronic Information & Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074China
| | - Jinsong Cui
- School of Optical and Electronic Information & Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074China
| | - Yan Xu
- School of Optical and Electronic Information & Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074China
| | - Yaoyuan Wang
- School of Optical and Electronic Information & Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074China
| | - Wei Tong
- School of Computer Science and Technology & Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074China
| | - Zhe Yuan
- Department of PhysicsBeijing Normal UniversityBeijing100875China
| | - Yan Cui
- Institute of MicroelectronicsUniversity of Chinese Academy of SciencesBeijing100029China
| | - Li Xi
- School of Physical Science and TechnologyLanzhou UniversityLanzhou730000China
| | - Dan Feng
- School of Computer Science and Technology & Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074China
| | - Xiaofei Yang
- School of Optical and Electronic Information & Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074China
| | - Xuecheng Zou
- School of Optical and Electronic Information & Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074China
| | - Jeongmin Hong
- School of Optical and Electronic Information & Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074China
| | - Long You
- School of Optical and Electronic Information & Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074China
- Shenzhen Huazhong University of Science and Technology Research InstituteShenzhen518000China
- Wuhan National High Magnetic Field CenterHuazhong University of Science and TechnologyWuhan430074China
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184
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Liu Y, Wang Y, Li X, Hu Z. A thermally crosslinked ion-gel gated artificial synapse. CHINESE CHEM LETT 2022. [DOI: 10.1016/j.cclet.2022.107842] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
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185
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Wang X, Song S, Wang H, Guo T, Xue Y, Wang R, Wang H, Chen L, Jiang C, Chen C, Shi Z, Wu T, Song W, Zhang S, Watanabe K, Taniguchi T, Song Z, Xie X. Minimizing the Programming Power of Phase Change Memory by Using Graphene Nanoribbon Edge-Contact. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2202222. [PMID: 36062987 PMCID: PMC9443440 DOI: 10.1002/advs.202202222] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/09/2022] [Revised: 06/17/2022] [Indexed: 06/15/2023]
Abstract
Nonvolatile phase-change random access memory (PCRAM) is regarded as one of the promising candidates for emerging mass storage in the era of Big Data. However, relatively high programming energy hurdles the further reduction of power consumption in PCRAM. Utilizing narrow edge-contact of graphene can effectively reduce the active volume of phase change material in each cell, and therefore realize low-power operation. Here, it demonstrates that the power consumption can be reduced to ≈53.7 fJ in a cell with ≈3 nm-wide graphene nanoribbon (GNR) as edge-contact, whose cross-sectional area is only ≈1 nm2 . It is found that the polarity of the bias pulse determines its cycle endurance in the asymmetric structure. If a positive bias is applied to the graphene electrode, the endurance can be extended at least one order longer than the case with a reversal of polarity. In addition, the introduction of the hexagonal boron nitride (h-BN) multilayer leads to a low resistance drift and a high programming speed in a memory cell. The work represents a great technological advance for the low-power PCRAM and can benefit in-memory computing in the future.
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Affiliation(s)
- Xiujun Wang
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences865 Changning RoadShanghai200050P. R. China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049P. R. China
- CAS Center for Excellence in Superconducting Electronics (CENSE)Shanghai200050P. R. China
| | - Sannian Song
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences865 Changning RoadShanghai200050P. R. China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049P. R. China
| | - Haomin Wang
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences865 Changning RoadShanghai200050P. R. China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049P. R. China
- CAS Center for Excellence in Superconducting Electronics (CENSE)Shanghai200050P. R. China
| | - Tianqi Guo
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences865 Changning RoadShanghai200050P. R. China
| | - Yuan Xue
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences865 Changning RoadShanghai200050P. R. China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049P. R. China
| | - Ruobing Wang
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences865 Changning RoadShanghai200050P. R. China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049P. R. China
| | - HuiShan Wang
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences865 Changning RoadShanghai200050P. R. China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049P. R. China
- CAS Center for Excellence in Superconducting Electronics (CENSE)Shanghai200050P. R. China
| | - Lingxiu Chen
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences865 Changning RoadShanghai200050P. R. China
- CAS Center for Excellence in Superconducting Electronics (CENSE)Shanghai200050P. R. China
| | - Chengxin Jiang
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences865 Changning RoadShanghai200050P. R. China
- CAS Center for Excellence in Superconducting Electronics (CENSE)Shanghai200050P. R. China
- School of Physical Science and TechnologyShanghaiTech UniversityShanghai201210P. R. China
| | - Chen Chen
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences865 Changning RoadShanghai200050P. R. China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049P. R. China
- CAS Center for Excellence in Superconducting Electronics (CENSE)Shanghai200050P. R. China
| | - Zhiyuan Shi
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences865 Changning RoadShanghai200050P. R. China
- CAS Center for Excellence in Superconducting Electronics (CENSE)Shanghai200050P. R. China
| | - Tianru Wu
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences865 Changning RoadShanghai200050P. R. China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049P. R. China
- CAS Center for Excellence in Superconducting Electronics (CENSE)Shanghai200050P. R. China
| | - Wenxiong Song
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences865 Changning RoadShanghai200050P. R. China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049P. R. China
| | - Sifan Zhang
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences865 Changning RoadShanghai200050P. R. China
| | - Kenji Watanabe
- Research Center for Functional MaterialsNational Institute for Materials Science1‐1 NamikiTsukuba305‐0044Japan
| | - Takashi Taniguchi
- International Center for Materials NanoarchitectonicsNational Institute for Materials Science1‐1 NamikiTsukuba305‐0044Japan
| | - Zhitang Song
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences865 Changning RoadShanghai200050P. R. China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049P. R. China
| | - Xiaoming Xie
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences865 Changning RoadShanghai200050P. R. China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049P. R. China
- CAS Center for Excellence in Superconducting Electronics (CENSE)Shanghai200050P. R. China
- School of Physical Science and TechnologyShanghaiTech UniversityShanghai201210P. R. China
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186
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Liu Y, Li H, Guo SX, Iu HHC. Generation of Multi-Lobe Chua Corsage Memristor and Its Neural Oscillation. MICROMACHINES 2022; 13:1330. [PMID: 36014252 PMCID: PMC9414626 DOI: 10.3390/mi13081330] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/12/2022] [Revised: 08/05/2022] [Accepted: 08/11/2022] [Indexed: 06/15/2023]
Abstract
The Chua corsage memristor (CCM) is considered as one of the candidates for the realization of biological neuron models due to its rich neuromorphic behaviors. In this paper, a universal model for m-lobe CCM memristor is proposed. Moreover, a novel small-signal equivalent circuit with one capacitor is derived based on the proposed model to determine the edge of chaos and obtain the zero-pole diagrams and analyze the frequency response and oscillation mechanism of the m-lobe CCM system, which are discussed in detail. In view of existence of the edge of chaos, the frequency response and the oscillation mechanism of the simplest oscillator is analysed using the proposed model. Finally, the proposed model has exhibited some essential neural oscillation, including the stable limit cycle, supercritical Hopf bifurcation, spiking and bursting oscillation. This study also reveals a previously undiscovered behavior of bursting oscillation in a CCM system.
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Affiliation(s)
- Yue Liu
- Department of Electrical and Electronic Engineering, Changchun University of Technology, Changchun 130012, China
| | - Hui Li
- Department of Electrical and Electronic Engineering, Changchun University of Technology, Changchun 130012, China
| | - Shu-Xu Guo
- College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Herbert Ho-Ching Iu
- Department of Electrical, Electronic and Computer Engineering, The University of Western Australia, Crawley, WA 6009, Australia
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187
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Khan AI, Wu X, Perez C, Won B, Kim K, Ramesh P, Kwon H, Tung MC, Lee Z, Oh IK, Saraswat K, Asheghi M, Goodson KE, Wong HSP, Pop E. Unveiling the Effect of Superlattice Interfaces and Intermixing on Phase Change Memory Performance. NANO LETTERS 2022; 22:6285-6291. [PMID: 35876819 DOI: 10.1021/acs.nanolett.2c01869] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Superlattice (SL) phase change materials have shown promise to reduce the switching current and resistance drift of phase change memory (PCM). However, the effects of internal SL interfaces and intermixing on PCM performance remain unexplored, although these are essential to understand and ensure reliable memory operation. Here, using nanometer-thin layers of Ge2Sb2Te5 and Sb2Te3 in SL-PCM, we uncover that both switching current density (Jreset) and resistance drift coefficient (v) decrease as the SL period thickness is reduced (i.e., higher interface density); however, interface intermixing within the SL increases both. The signatures of distinct versus intermixed interfaces also show up in transmission electron microscopy, X-ray diffraction, and thermal conductivity measurements of our SL films. Combining the lessons learned, we simultaneously achieve low Jreset ≈ 3-4 MA/cm2 and ultralow v ≈ 0.002 in mushroom-cell SL-PCM with ∼110 nm bottom contact diameter, thus advancing SL-PCM technology for high-density storage and neuromorphic applications.
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Affiliation(s)
- Asir Intisar Khan
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Xiangjin Wu
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Christopher Perez
- Department of Mechanical Engineering, Stanford University, Stanford, California 94305, United States
| | - Byoungjun Won
- Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, Republic of Korea
| | - Kangsik Kim
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, Republic of Korea
| | - Pranav Ramesh
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Heungdong Kwon
- Department of Mechanical Engineering, Stanford University, Stanford, California 94305, United States
| | - Maryann C Tung
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Zonghoon Lee
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Il-Kwon Oh
- Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, Republic of Korea
| | - Krishna Saraswat
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Mehdi Asheghi
- Department of Mechanical Engineering, Stanford University, Stanford, California 94305, United States
| | - Kenneth E Goodson
- Department of Mechanical Engineering, Stanford University, Stanford, California 94305, United States
| | - H-S Philip Wong
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Eric Pop
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
- Precourt Institute for Energy, Stanford University, Stanford, California 94305, United States
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188
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Toprasertpong K, Nako E, Wang Z, Nakane R, Takenaka M, Takagi S. Reservoir computing on a silicon platform with a ferroelectric field-effect transistor. COMMUNICATIONS ENGINEERING 2022; 1:21. [PMCID: PMC10956125 DOI: 10.1038/s44172-022-00021-8] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/06/2022] [Accepted: 07/22/2022] [Indexed: 08/19/2024]
Abstract
Reservoir computing offers efficient processing of time-series data with exceptionally low training cost for real-time computing in edge devices where energy and hardware resources are limited. Here, we report reservoir computing hardware based on a ferroelectric field-effect transistor (FeFET) consisting of silicon and ferroelectric hafnium zirconium oxide. The rich dynamics originating from the ferroelectric polarization dynamics and polarization-charge coupling are the keys leading to the essential properties for reservoir computing: the short-term memory and high-dimensional nonlinear transform function. We demonstrate that an FeFET-based reservoir computing system can successfully solve computational tasks on time-series data processing including nonlinear time series prediction after training with simple regression. Due to the FeFET’s high feasibility of implementation on the silicon platform, the systems have flexibility in both device- and circuit-level designs, and have a high potential for on-chip integration with existing computing technologies towards the realization of advanced intelligent systems. Kasidit Toprasertpong and colleagues describe reservoir computing hardware with potential for on-chip integration with existing computing technologies. The approach is based on a ferroelectric field-effect transistor, and can solve computational tasks on time series data including nonlinear time series prediction after training with simple regression.
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Affiliation(s)
- Kasidit Toprasertpong
- Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656 Japan
| | - Eishin Nako
- Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656 Japan
| | - Zeyu Wang
- Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656 Japan
| | - Ryosho Nakane
- Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656 Japan
| | - Mitsuru Takenaka
- Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656 Japan
| | - Shinichi Takagi
- Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656 Japan
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189
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Review on the Basic Circuit Elements and Memristor Interpretation: Analysis, Technology and Applications. JOURNAL OF LOW POWER ELECTRONICS AND APPLICATIONS 2022. [DOI: 10.3390/jlpea12030044] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/10/2022]
Abstract
Circuit or electronic components are useful elements allowing the realization of different circuit functionalities. The resistor, capacitor and inductor represent the three commonly known basic passive circuit elements owing to their fundamental nature relating them to the four circuit variables, namely voltage, magnetic flux, current and electric charge. The memory resistor (or memristor) was claimed to be the fourth basic passive circuit element, complementing the resistor, capacitor and inductor. This paper presents a review on the four basic passive circuit elements. After a brief recall on the first three known basic passive circuit elements, a thorough description of the memristor follows. Memristor sparks interest in the scientific community due to its interesting features, for example nano-scalability, memory capability, conductance modulation, connection flexibility and compatibility with CMOS technology, etc. These features among many others are currently in high demand on an industrial scale. For this reason, thousands of memristor-based applications are reported. Hence, the paper presents an in-depth overview of the philosophical argumentations of memristor, technologies and applications.
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190
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Pendurthi R, Jayachandran D, Kozhakhmetov A, Trainor N, Robinson JA, Redwing JM, Das S. Heterogeneous Integration of Atomically Thin Semiconductors for Non-von Neumann CMOS. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2202590. [PMID: 35843869 DOI: 10.1002/smll.202202590] [Citation(s) in RCA: 20] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/28/2022] [Revised: 06/21/2022] [Indexed: 06/15/2023]
Abstract
Atomically thin, 2D, and semiconducting transition metal dichalcogenides (TMDs) are seen as potential candidates for complementary metal oxide semiconductor (CMOS) technology in future nodes. While high-performance field effect transistors (FETs), logic gates, and integrated circuits (ICs) made from n-type TMDs such as MoS2 and WS2 grown at wafer scale have been demonstrated, realizing CMOS electronics necessitates integration of large area p-type semiconductors. Furthermore, the physical separation of memory and logic is a bottleneck of the existing CMOS technology and must be overcome to reduce the energy burden for computation. In this article, the existing limitations are overcome and for the first time, a heterogeneous integration of large area grown n-type MoS2 and p-type vanadium doped WSe2 FETs with non-volatile and analog memory storage capabilities to achieve a non-von Neumann 2D CMOS platform is introduced. This manufacturing process flow allows for precise positioning of n-type and p-type FETs, which is critical for any IC development. Inverters and a simplified 2-input-1-output multiplexers and neuromorphic computing primitives such as Gaussian, sigmoid, and tanh activation functions using this non-von Neumann 2D CMOS platform are also demonstrated. This demonstration shows the feasibility of heterogeneous integration of wafer scale 2D materials.
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Affiliation(s)
- Rahul Pendurthi
- Engineering Science and Mechanics, Penn State University, University Park, PA, 16802, USA
| | - Darsith Jayachandran
- Engineering Science and Mechanics, Penn State University, University Park, PA, 16802, USA
| | - Azimkhan Kozhakhmetov
- Materials Science and Engineering, Penn State University, University Park, PA, 16802, USA
| | - Nicholas Trainor
- Materials Science and Engineering, Penn State University, University Park, PA, 16802, USA
- 2D Crystal Consortium - Materials Innovation Platform (2DCC-MIP) Materials Research Institute, Penn State University, University Park, PA, 16802, USA
| | - Joshua A Robinson
- Materials Science and Engineering, Penn State University, University Park, PA, 16802, USA
- 2D Crystal Consortium - Materials Innovation Platform (2DCC-MIP) Materials Research Institute, Penn State University, University Park, PA, 16802, USA
| | - Joan M Redwing
- Materials Science and Engineering, Penn State University, University Park, PA, 16802, USA
- 2D Crystal Consortium - Materials Innovation Platform (2DCC-MIP) Materials Research Institute, Penn State University, University Park, PA, 16802, USA
| | - Saptarshi Das
- Engineering Science and Mechanics, Penn State University, University Park, PA, 16802, USA
- Materials Science and Engineering, Penn State University, University Park, PA, 16802, USA
- 2D Crystal Consortium - Materials Innovation Platform (2DCC-MIP) Materials Research Institute, Penn State University, University Park, PA, 16802, USA
- Electrical Engineering and Computer Science, Penn State University, University Park, PA, 16802, USA
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191
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Li C, Lammie C, Dong X, Amirsoleimani A, Azghadi MR, Genov R. Seizure Detection and Prediction by Parallel Memristive Convolutional Neural Networks. IEEE TRANSACTIONS ON BIOMEDICAL CIRCUITS AND SYSTEMS 2022; 16:609-625. [PMID: 35737626 DOI: 10.1109/tbcas.2022.3185584] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
During the past two decades, epileptic seizure detection and prediction algorithms have evolved rapidly. However, despite significant performance improvements, their hardware implementation using conventional technologies, such as Complementary Metal-Oxide-Semiconductor (CMOS), in power and area-constrained settings remains a challenging task; especially when many recording channels are used. In this paper, we propose a novel low-latency parallel Convolutional Neural Network (CNN) architecture that has between 2-2,800x fewer network parameters compared to State-Of-The-Art (SOTA) CNN architectures and achieves 5-fold cross validation accuracy of 99.84% for epileptic seizure detection, and 99.01% and 97.54% for epileptic seizure prediction, when evaluated using the University of Bonn Electroencephalogram (EEG), CHB-MIT and SWEC-ETHZ seizure datasets, respectively. We subsequently implement our network onto analog crossbar arrays comprising Resistive Random-Access Memory (RRAM) devices, and provide a comprehensive benchmark by simulating, laying out, and determining hardware requirements of the CNN component of our system. We parallelize the execution of convolution layer kernels on separate analog crossbars to enable 2 orders of magnitude reduction in latency compared to SOTA hybrid Memristive-CMOS Deep Learning (DL) accelerators. Furthermore, we investigate the effects of non-idealities on our system and investigate Quantization Aware Training (QAT) to mitigate the performance degradation due to low Analog-to-Digital Converter (ADC)/Digital-to-Analog Converter (DAC) resolution. Finally, we propose a stuck weight offsetting methodology to mitigate performance degradation due to stuck [Formula: see text] memristor weights, recovering up to 32% accuracy, without requiring retraining. The CNN component of our platform is estimated to consume approximately 2.791 W of power while occupying an area of 31.255 mm2 in a 22 nm FDSOI CMOS process.
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192
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Kireev D, Liu S, Jin H, Patrick Xiao T, Bennett CH, Akinwande D, Incorvia JAC. Metaplastic and energy-efficient biocompatible graphene artificial synaptic transistors for enhanced accuracy neuromorphic computing. Nat Commun 2022; 13:4386. [PMID: 35902599 PMCID: PMC9334620 DOI: 10.1038/s41467-022-32078-6] [Citation(s) in RCA: 18] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/11/2022] [Accepted: 07/14/2022] [Indexed: 12/27/2022] Open
Abstract
CMOS-based computing systems that employ the von Neumann architecture are relatively limited when it comes to parallel data storage and processing. In contrast, the human brain is a living computational signal processing unit that operates with extreme parallelism and energy efficiency. Although numerous neuromorphic electronic devices have emerged in the last decade, most of them are rigid or contain materials that are toxic to biological systems. In this work, we report on biocompatible bilayer graphene-based artificial synaptic transistors (BLAST) capable of mimicking synaptic behavior. The BLAST devices leverage a dry ion-selective membrane, enabling long-term potentiation, with ~50 aJ/µm2 switching energy efficiency, at least an order of magnitude lower than previous reports on two-dimensional material-based artificial synapses. The devices show unique metaplasticity, a useful feature for generalizable deep neural networks, and we demonstrate that metaplastic BLASTs outperform ideal linear synapses in classic image classification tasks. With switching energy well below the 1 fJ energy estimated per biological synapse, the proposed devices are powerful candidates for bio-interfaced online learning, bridging the gap between artificial and biological neural networks.
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Affiliation(s)
- Dmitry Kireev
- Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX, 78712, USA
- Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA
| | - Samuel Liu
- Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX, 78712, USA
| | - Harrison Jin
- Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX, 78712, USA
| | - T Patrick Xiao
- Sandia National Laboratories, Albuquerque, NM, 87123, USA
| | | | - Deji Akinwande
- Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX, 78712, USA
- Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA
| | - Jean Anne C Incorvia
- Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX, 78712, USA.
- Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA.
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193
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Kang J, Kim T, Hu S, Kim J, Kwak JY, Park J, Park JK, Kim I, Lee S, Kim S, Jeong Y. Cluster-type analogue memristor by engineering redox dynamics for high-performance neuromorphic computing. Nat Commun 2022; 13:4040. [PMID: 35831304 PMCID: PMC9279478 DOI: 10.1038/s41467-022-31804-4] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/24/2021] [Accepted: 06/28/2022] [Indexed: 11/10/2022] Open
Abstract
Memristors, or memristive devices, have attracted tremendous interest in neuromorphic hardware implementation. However, the high electric-field dependence in conventional filamentary memristors results in either digital-like conductance updates or gradual switching only in a limited dynamic range. Here, we address the switching parameter, the reduction probability of Ag cations in the switching medium, and ultimately demonstrate a cluster-type analogue memristor. Ti nanoclusters are embedded into densified amorphous Si for the following reasons: low standard reduction potential, thermodynamic miscibility with Si, and alloy formation with Ag. These Ti clusters effectively induce the electrochemical reduction activity of Ag cations and allow linear potentiation/depression in tandem with a large conductance range (~244) and long data retention (~99% at 1 hour). Moreover, according to the reduction potentials of incorporated metals (Pt, Ta, W, and Ti), the extent of linearity improvement is selectively tuneable. Image processing simulation proves that the Ti4.8%:a-Si device can fully function with high accuracy as an ideal synaptic model. Conventional filamentary memristors are limited in dynamics by the high electric-field dependence of the conductive filament. Here, Jeong et al. presents a method which creates a cluster-type memristor, enabling large conductance range and long data retention.
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Affiliation(s)
- Jaehyun Kang
- Center for Neuromorphic Engineering, Korea Institute of Science and Technology, Seoul, 02792, Republic of Korea.,Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - Taeyoon Kim
- Center for Neuromorphic Engineering, Korea Institute of Science and Technology, Seoul, 02792, Republic of Korea
| | - Suman Hu
- Center for Neuromorphic Engineering, Korea Institute of Science and Technology, Seoul, 02792, Republic of Korea
| | - Jaewook Kim
- Center for Neuromorphic Engineering, Korea Institute of Science and Technology, Seoul, 02792, Republic of Korea
| | - Joon Young Kwak
- Center for Neuromorphic Engineering, Korea Institute of Science and Technology, Seoul, 02792, Republic of Korea
| | - Jongkil Park
- Center for Neuromorphic Engineering, Korea Institute of Science and Technology, Seoul, 02792, Republic of Korea
| | - Jong Keuk Park
- Center for Neuromorphic Engineering, Korea Institute of Science and Technology, Seoul, 02792, Republic of Korea
| | - Inho Kim
- Center for Neuromorphic Engineering, Korea Institute of Science and Technology, Seoul, 02792, Republic of Korea
| | - Suyoun Lee
- Center for Neuromorphic Engineering, Korea Institute of Science and Technology, Seoul, 02792, Republic of Korea
| | - Sangbum Kim
- Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - YeonJoo Jeong
- Center for Neuromorphic Engineering, Korea Institute of Science and Technology, Seoul, 02792, Republic of Korea.
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194
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Udaya Mohanan K, Cho S, Park BG. Medium-Temperature-Oxidized GeO x Resistive-Switching Random-Access Memory and Its Applicability in Processing-in-Memory Computing. NANOSCALE RESEARCH LETTERS 2022; 17:63. [PMID: 35789299 PMCID: PMC9256894 DOI: 10.1186/s11671-022-03701-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/12/2022] [Accepted: 06/27/2022] [Indexed: 06/15/2023]
Abstract
Processing-in-memory (PIM) is emerging as a new computing paradigm to replace the existing von Neumann computer architecture for data-intensive processing. For the higher end-user mobility, low-power operation capability is more increasingly required and components need to be renovated to make a way out of the conventional software-driven artificial intelligence. In this work, we investigate the hardware performances of PIM architecture that can be presumably constructed by resistive-switching random-access memory (ReRAM) synapse fabricated with a relatively larger thermal budget in the full Si processing compatibility. By introducing a medium-temperature oxidation in which the sputtered Ge atoms are oxidized at a relatively higher temperature compared with the ReRAM devices fabricated by physical vapor deposition at room temperature, higher device reliability has been acquired. Based on the empirically obtained device parameters, a PIM architecture has been conceived and a system-level evaluations have been performed in this work. Considerations include the cycle-to-cycle variation in the GeOx ReRAM synapse, analog-to-digital converter resolution, synaptic array size, and interconnect latency for the system-level evaluation with the Canadian Institute for Advance Research-10 dataset. A fully Si processing-compatible and robust ReRAM synapse and its applicability for PIM are demonstrated.
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Affiliation(s)
- Kannan Udaya Mohanan
- Department of Electronic Engineering and College of IT Convergence Engineering, Gachon University, Seongnam-si, Gyeonggi-do, 13120, Republic of Korea
| | - Seongjae Cho
- Department of Electronic Engineering and College of IT Convergence Engineering, Gachon University, Seongnam-si, Gyeonggi-do, 13120, Republic of Korea.
| | - Byung-Gook Park
- Department of Electrical and Computer Engineering with Inter-university Semiconductor Research Center (ISRC), Seoul National University, Seoul, 08826, Republic of Korea
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195
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Dong S, Chen Y, Fan Z, Chen K, Qin M, Zeng M, Lu X, Zhou G, Gao X, Liu JM. A backpropagation with gradient accumulation algorithm capable of tolerating memristor non-idealities for training memristive neural networks. Neurocomputing 2022. [DOI: 10.1016/j.neucom.2022.04.008] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/18/2022]
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196
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Farmakidis N, Youngblood N, Lee JS, Feldmann J, Lodi A, Li X, Aggarwal S, Zhou W, Bogani L, Pernice WHP, Wright CD, Bhaskaran H. Electronically Reconfigurable Photonic Switches Incorporating Plasmonic Structures and Phase Change Materials. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2200383. [PMID: 35434939 PMCID: PMC9284156 DOI: 10.1002/advs.202200383] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/03/2022] [Revised: 03/15/2022] [Indexed: 05/11/2023]
Abstract
The ever-increasing demands for data processing and storage will require seamless monolithic co-integration of electronics and photonics. Phase-change materials are uniquely suited to fulfill this function due to their dual electro-optical sensitivity, nonvolatile retention properties, and fast switching dynamics. The extreme size disparity however between CMOS electronics and dielectric photonics inhibits the realization of efficient and compact electrically driven photonic switches, logic and routing elements. Here, the authors achieve an important milestone in harmonizing the two domains by demonstrating an electrically reconfigurable, ultra-compact and nonvolatile memory that is optically accessible. The platform relies on localized heat, generated within a plasmonic structure; this uniquely allows for both optical and electrical readout signals to be interlocked with the material state of the PCM while still ensuring that the writing operation is electrically decoupled. Importantly, by miniaturization and effective thermal engineering, the authors achieve unprecedented energy efficiency, opening up a path towards low-energy optoelectronic hardware for neuromorphic and in-memory computing.
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Affiliation(s)
| | - Nathan Youngblood
- Department of MaterialsUniversity of OxfordParks RoadOxfordOX1 3PHUK
- Present Address: Department of Electrical and Computer EngineeringSwanson School of EngineeringUniversity of PittsburghPittsburghPA15261USA
| | - June Sang Lee
- Department of MaterialsUniversity of OxfordParks RoadOxfordOX1 3PHUK
| | - Johannes Feldmann
- Department of MaterialsUniversity of OxfordParks RoadOxfordOX1 3PHUK
| | - Alessandro Lodi
- Department of MaterialsUniversity of OxfordParks RoadOxfordOX1 3PHUK
| | - Xuan Li
- Department of MaterialsUniversity of OxfordParks RoadOxfordOX1 3PHUK
| | - Samarth Aggarwal
- Department of MaterialsUniversity of OxfordParks RoadOxfordOX1 3PHUK
| | - Wen Zhou
- Department of MaterialsUniversity of OxfordParks RoadOxfordOX1 3PHUK
| | - Lapo Bogani
- Department of MaterialsUniversity of OxfordParks RoadOxfordOX1 3PHUK
| | | | - C David Wright
- Departmentof EngineeringUniversity of ExeterExeterEX4 4QFUK
| | - Harish Bhaskaran
- Department of MaterialsUniversity of OxfordParks RoadOxfordOX1 3PHUK
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197
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Li Y, Chen S, Yu Z, Li S, Xiong Y, Pam ME, Zhang YW, Ang KW. In-Memory Computing using Memristor Arrays with Ultrathin 2D PdSeO x /PdSe 2 Heterostructure. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2201488. [PMID: 35393702 DOI: 10.1002/adma.202201488] [Citation(s) in RCA: 22] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/15/2022] [Revised: 03/23/2022] [Indexed: 06/14/2023]
Abstract
In-memory computing based on memristor arrays holds promise to address the speed and energy issues of the classical von Neumann computing system. However, the stochasticity of ions' transport in conventional oxide-based memristors imposes severe intrinsic variability, which compromises learning accuracy and hinders the implementation of neural network hardware accelerators. Here, these challenges are addressed using a low-voltage memristor array based on an ultrathin PdSeOx /PdSe2 heterostructure switching medium realized by a controllable ultraviolet (UV)-ozone treatment. A distinctively different ions' transport mechanism is revealed in the heterostructure that can confine the formation of conductive filaments, leading to a remarkable uniform switching with low set and reset voltage variability values of 4.8% and -3.6%, respectively. Moreover, convolutional image processing is further implemented using various crossbar kernels that achieve a high recognition accuracy of ≈93.4% due to the highly linear and symmetric analog weight update as well as multiple conductance states, manifesting its potential beyond von Neumann computing.
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Affiliation(s)
- Yesheng Li
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
- Department of Microstructure, School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Shuai Chen
- Institute for High Performance Computing, A*STAR, 1 Fusionopolis Way, Singapore, 138632, Singapore
| | - Zhigen Yu
- Institute for High Performance Computing, A*STAR, 1 Fusionopolis Way, Singapore, 138632, Singapore
| | - Sifan Li
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Yao Xiong
- Department of Physics, School of Science, Wuhan University of Technology, Wuhan, 430070, China
| | - Mer-Er Pam
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Yong-Wei Zhang
- Institute for High Performance Computing, A*STAR, 1 Fusionopolis Way, Singapore, 138632, Singapore
| | - Kah-Wee Ang
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
- Institute of Materials Research and Engineering, A*STAR, 2 Fusionopolis Way, Singapore, 138634, Singapore
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198
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Pam ME, Li S, Su T, Chien YC, Li Y, Ang YS, Ang KW. Interface-Modulated Resistive Switching in Mo-Irradiated ReS 2 for Neuromorphic Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2202722. [PMID: 35610176 DOI: 10.1002/adma.202202722] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/24/2022] [Revised: 04/30/2022] [Indexed: 06/15/2023]
Abstract
Coupling charge impurity scattering effects and charge-carrier modulation by doping can offer intriguing opportunities for atomic-level control of resistive switching (RS). Nonetheless, such effects have remained unexplored for memristive applications based on 2D materials. Here a facile approach is reported to transform an RS-inactive rhenium disulfide (ReS2 ) into an effective switching material through interfacial modulation induced by molybdenum-irradiation (Mo-i) doping. Using ReS2 as a model system, this study unveils a unique RS mechanism based on the formation/dissolution of metallic β-ReO2 filament across the defective ReS2 interface during the set/reset process. Through simple interfacial modulation, ReS2 of various thicknesses are switchable by modulating the Mo-irradiation period. Besides, the Mo-irradiated ReS2 (Mo-ReS2 ) memristor further exhibits a bipolar non-volatile switching ratio of nearly two orders of magnitude, programmable multilevel resistance states, and long-term synaptic plasticity. Additionally, the fabricated device can achieve a high MNIST learning accuracy of 91% under a non-identical pulse train. The study's findings demonstrate the potential for modulating RS in RS-inactive 2D materials via the unique doping-induced charged impurity scattering property.
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Affiliation(s)
- Mei Er Pam
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Sifan Li
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Tong Su
- Science, Mathematics and Technology (SMT), Singapore University of Technology and Design (SUTD), 8 Somapah Road, Singapore, 487372, Singapore
| | - Yu-Chieh Chien
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Yesheng Li
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Yee Sin Ang
- Science, Mathematics and Technology (SMT), Singapore University of Technology and Design (SUTD), 8 Somapah Road, Singapore, 487372, Singapore
| | - Kah-Wee Ang
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
- Institute of Materials Research and Engineering, A*STAR, 2 Fusionopolis, Singapore, 138634, Singapore
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199
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Optimised weight programming for analogue memory-based deep neural networks. Nat Commun 2022; 13:3765. [PMID: 35773285 PMCID: PMC9247051 DOI: 10.1038/s41467-022-31405-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/28/2021] [Accepted: 06/09/2022] [Indexed: 11/11/2022] Open
Abstract
Analogue memory-based deep neural networks provide energy-efficiency and per-area throughput gains relative to state-of-the-art digital counterparts such as graphics processing units. Recent advances focus largely on hardware-aware algorithmic training and improvements to circuits, architectures, and memory devices. Optimal translation of software-trained weights into analogue hardware weights—given the plethora of complex memory non-idealities—represents an equally important task. We report a generalised computational framework that automates the crafting of complex weight programming strategies to minimise accuracy degradations during inference, particularly over time. The framework is agnostic to network structure and generalises well across recurrent, convolutional, and transformer neural networks. As a highly flexible numerical heuristic, the approach accommodates arbitrary device-level complexity, making it potentially relevant for a variety of analogue memories. By quantifying the limit of achievable inference accuracy, it also enables analogue memory-based deep neural network accelerators to reach their full inference potential. Device-level complexity represents a big shortcoming for the hardware realization of analogue memory-based deep neural networks. Mackin et al. report a generalized computational framework, translating software-trained weights into analogue hardware weights, to minimise inference accuracy degradation.
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200
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Park Y, Lee JS. Metal Halide Perovskite-Based Memristors for Emerging Memory Applications. J Phys Chem Lett 2022; 13:5638-5647. [PMID: 35708321 DOI: 10.1021/acs.jpclett.2c01303] [Citation(s) in RCA: 15] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
There is an increased demand for next-generation memory devices with high density and fast operation speed to replace conventional memory devices. Memristors are promising candidates for next-generation memory devices because of their scalability, stable data retention, low power consumption, and fast operation. Among the various types of memristors, halide perovskites exhibit potential as emerging materials for memristors by using hysteresis based on the movement of defects or ions in halide perovskites. However, research on the implementation of perovskite materials as memristors is in its early stages; some challenges and problems must be solved to enable the practical application of halide perovskites for next-generation memory devices. From this perspective, we highlight the recent progress in memristors that use halide perovskites. Moreover, we introduce a strategy to enhance the performance and analyze the operation mechanism of memory devices that use halide perovskites. Finally, we summarize the challenges in the development of device technology to use halide perovskites in next-generation memory devices.
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Affiliation(s)
- Youngjun Park
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Jang-Sik Lee
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
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