Zang Y, Zhang F, Huang D, Gao X, Di CA, Zhu D. Flexible suspended gate organic thin-film transistors for ultra-sensitive pressure detection.
Nat Commun 2015;
6:6269. [PMID:
25872157 PMCID:
PMC4366495 DOI:
10.1038/ncomms7269]
[Citation(s) in RCA: 203] [Impact Index Per Article: 22.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/29/2014] [Accepted: 01/12/2015] [Indexed: 12/12/2022] Open
Abstract
The utilization of organic devices as pressure-sensing elements in artificial intelligence and healthcare applications represents a fascinating opportunity for the next-generation electronic products. To satisfy the critical requirements of these promising applications, the low-cost construction of large-area ultra-sensitive organic pressure devices with outstanding flexibility is highly desired. Here we present flexible suspended gate organic thin-film transistors (SGOTFTs) as a model platform that enables ultra-sensitive pressure detection. More importantly, the unique device geometry of SGOTFTs allows the fine-tuning of their sensitivity by the suspended gate. An unprecedented sensitivity of 192 kPa−1, a low limit-of-detection pressure of <0.5 Pa and a short response time of 10 ms were successfully realized, allowing the real-time detection of acoustic waves. These excellent sensing properties of SGOTFTs, together with their advantages of facile large-area fabrication and versatility in detecting various pressure signals, make SGOTFTs a powerful strategy for spatial pressure mapping in practical applications.
The development of wearable healthcare and intelligence systems require low-cost, large-area flexible electronic sensors. Here, Zang et al. report pressure sensors based on organic thin-film transistors in combination with a suspended-gate device geometry, which show high sensitivity up to 192 kPa−1.
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