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Takáts V, Bodnár E, Kaganovskii Y, Fodor T, Hakl J, Molnár S, Soha M, Vad K. Characterization of nanoscale atomic motion of Si in polycrystalline Cu layer. Heliyon 2024; 10:e25516. [PMID: 38333798 PMCID: PMC10850960 DOI: 10.1016/j.heliyon.2024.e25516] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/19/2023] [Revised: 01/23/2024] [Accepted: 01/29/2024] [Indexed: 02/10/2024] Open
Abstract
Atomic migration of silicon through grain boundaries of a thin polycrystalline Cu film and island formation on the Cu surface were studied in the temperature range of 403-520 K. Samples used in these experiments was prepared on Si(111) wafers by room temperature magnetron sputtering and they consisted of amorphous Si layer (80 nm) and polycrystalline Cu layer (40 nm). The silicon layer served as the source layer of diffusion, while the copper surface was the accumulation surface. Detection of Si atoms on the accumulation surface after penetration through the Cu layer was made by low energy ion scattering spectroscopy and the grain boundary diffusion coefficient DGB was determined from the appearance time. The depth distribution of Si in the Cu film was analysed by secondary neutral mass spectroscopy. From this depth distribution, DGB was also determined. By scanning probe microscope and electron microscope measurements, it was experimentally detected that Si atoms on the Cu surface did not form a continuous layer. Instead, amorphous Si islands were formed at the accumulation surface with surface protrusions in their centres.
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Affiliation(s)
- Viktor Takáts
- Institute for Nuclear Research, H-4026 Debrecen, Bem Tér 18/C, Hungary
| | - Eszter Bodnár
- Institute for Nuclear Research, H-4026 Debrecen, Bem Tér 18/C, Hungary
- University of Debrecen, Doctoral School of Physics, 4032 Debrecen, Egyetem Tér 1, Hungary
| | - Yuri Kaganovskii
- Department of Physics, Bar-Ilan University, Ramat-Gan 52900, Israel
| | - Tamás Fodor
- Institute for Nuclear Research, H-4026 Debrecen, Bem Tér 18/C, Hungary
| | - József Hakl
- Institute for Nuclear Research, H-4026 Debrecen, Bem Tér 18/C, Hungary
| | - Sándor Molnár
- Institute for Nuclear Research, H-4026 Debrecen, Bem Tér 18/C, Hungary
| | - Márton Soha
- Institute for Nuclear Research, H-4026 Debrecen, Bem Tér 18/C, Hungary
| | - Kálmán Vad
- Institute for Nuclear Research, H-4026 Debrecen, Bem Tér 18/C, Hungary
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Havelund R, Seah MP, Tiddia M, Gilmore IS. SIMS of Organic Materials-Interface Location in Argon Gas Cluster Depth Profiles Using Negative Secondary Ions. JOURNAL OF THE AMERICAN SOCIETY FOR MASS SPECTROMETRY 2018; 29:774-785. [PMID: 29468500 PMCID: PMC5889422 DOI: 10.1007/s13361-018-1905-2] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/18/2017] [Revised: 01/25/2018] [Accepted: 01/25/2018] [Indexed: 06/08/2023]
Abstract
A procedure has been established to define the interface position in depth profiles accurately when using secondary ion mass spectrometry and the negative secondary ions. The interface position varies strongly with the extent of the matrix effect and so depends on the secondary ion measured. Intensity profiles have been measured at both fluorenylmethyloxycarbonyl-L-pentafluorophenylalanine (FMOC) to Irganox 1010 and Irganox 1010 to FMOC interfaces for many secondary ions. These profiles show separations of the two interfaces that vary over some 10 nm depending on the secondary ion selected. The shapes of these profiles are strongly governed by matrix effects, slightly weakened by a long wavelength roughening. The matrix effects are separately measured using homogeneous, known mixtures of these two materials. Removal of the matrix and roughening effects give consistent compositional profiles for all ions that are described by an integrated exponentially modified Gaussian (EMG) profile. Use of a simple integrated Gaussian may lead to significant errors. The average interface positions in the compositional profiles are determined to standard uncertainties of 0.19 and 0.14 nm, respectively, using the integrated EMG function. Alternatively, and more simply, it is shown that interface positions and profiles may be deduced from data for several secondary ions with measured matrix factors by simply extrapolating the result to Ξ = 0. Care must be taken in quoting interface resolutions since those measured for predominantly Gaussian interfaces with Ξ above or below zero, without correction, appear significantly better than the true resolution. Graphical Abstract ᅟ.
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Affiliation(s)
- R Havelund
- National Physical Laboratory, Teddington, Middlesex, TW11 0LW, UK.
| | - M P Seah
- National Physical Laboratory, Teddington, Middlesex, TW11 0LW, UK
| | - M Tiddia
- Universita degli Studi di Cagliari, Dipartimento di Fisica S. P. Monserrato, Sestu Km 0.700, 09042, Monserrato, CA, Italy
| | - I S Gilmore
- National Physical Laboratory, Teddington, Middlesex, TW11 0LW, UK
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Seah M. Analytic function to describe interfaces and resolution consistency in sputter depth profiling. SURF INTERFACE ANAL 2017. [DOI: 10.1002/sia.6347] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
Affiliation(s)
- M.P. Seah
- Chemical, Medical and Environmental Science Division; National Physical Laboratory; Teddington Middlesex TW11 0LW UK
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Yunin P, Drozdov Y, Drozdov M, Khrykin O, Shashkin V. Quantitative SIMS depth profiling of Al in AlGaN/AlN/GaN HEMT structures with nanometer-thin layers. SURF INTERFACE ANAL 2016. [DOI: 10.1002/sia.6068] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- P.A. Yunin
- Institute for Physics of Microstructures of the Russian Academy of Sciences; Nizhny Novgorod Russia
- Lobachevsky State University of Nizhny Novgorod; Nizhny Novgorod Russia
| | - Yu.N. Drozdov
- Institute for Physics of Microstructures of the Russian Academy of Sciences; Nizhny Novgorod Russia
- Lobachevsky State University of Nizhny Novgorod; Nizhny Novgorod Russia
| | - M.N. Drozdov
- Institute for Physics of Microstructures of the Russian Academy of Sciences; Nizhny Novgorod Russia
- Lobachevsky State University of Nizhny Novgorod; Nizhny Novgorod Russia
| | - O.I. Khrykin
- Institute for Physics of Microstructures of the Russian Academy of Sciences; Nizhny Novgorod Russia
| | - V.I. Shashkin
- Institute for Physics of Microstructures of the Russian Academy of Sciences; Nizhny Novgorod Russia
- Lobachevsky State University of Nizhny Novgorod; Nizhny Novgorod Russia
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Hofmann S, Liu Y, Jian W, Kang H, Wang J. Depth resolution in sputter profiling revisited. SURF INTERFACE ANAL 2016. [DOI: 10.1002/sia.6039] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
Affiliation(s)
- S. Hofmann
- Max Planck Institute for Intelligent Systems (formerly MPI for Metals Research); Heisenbergstrasse 3 D-70569 Stuttgart Germany
| | - Y. Liu
- Department of Physics; Shantou University; 243 Daxue Road Shantou 515063 Guangdong China
| | - W. Jian
- Department of Physics; Shantou University; 243 Daxue Road Shantou 515063 Guangdong China
| | - H.L. Kang
- Department of Physics; Shantou University; 243 Daxue Road Shantou 515063 Guangdong China
| | - J.Y. Wang
- Department of Physics; Shantou University; 243 Daxue Road Shantou 515063 Guangdong China
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Van Nuffel S, Parmenter C, Scurr DJ, Russell NA, Zelzer M. Multivariate analysis of 3D ToF-SIMS images: method validation and application to cultured neuronal networks. Analyst 2016; 141:90-5. [DOI: 10.1039/c5an01743b] [Citation(s) in RCA: 23] [Impact Index Per Article: 2.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/19/2022]
Abstract
Here, we demonstrate that by using a training set approach principal components analysis (PCA) can be performed on large 3D ToF-SIMS images of neuronal cell cultures.
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Affiliation(s)
- S. Van Nuffel
- Laboratory of Biophysics and Surface Analysis
- School of Pharmacy
- Boots Science Building
- University of Nottingham
- Nottingham NG72RD
| | - C. Parmenter
- Nottingham Nanotechnology and Nanoscience Centre
- University of Nottingham
- UK
| | - D. J. Scurr
- Laboratory of Biophysics and Surface Analysis
- School of Pharmacy
- Boots Science Building
- University of Nottingham
- Nottingham NG72RD
| | - N. A. Russell
- Neurophotonics Lab
- Faculty of Engineering
- University of Nottingham
- Nottingham NG72RD
- UK
| | - M. Zelzer
- Laboratory of Biophysics and Surface Analysis
- School of Pharmacy
- Boots Science Building
- University of Nottingham
- Nottingham NG72RD
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Yunin PA, Drozdov YN, Drozdov MN. A new approach to express ToF SIMS depth profiling. SURF INTERFACE ANAL 2015. [DOI: 10.1002/sia.5773] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
Affiliation(s)
- Pavel Andreevich Yunin
- Department for Technology of Nanostructures and Devices; Institute for Physics of Microstructures of the Russian Academy of Sciences; GSP-105 Nizhny Novgorod 603950 Russia
- Lobachevsky State University of Nizhny Novgorod; 23 Gagarin avenue Nizhny Novgorod 603950 Russia
| | - Yurii Nikolaevich Drozdov
- Department for Technology of Nanostructures and Devices; Institute for Physics of Microstructures of the Russian Academy of Sciences; GSP-105 Nizhny Novgorod 603950 Russia
| | - Mikhail Nikolaevich Drozdov
- Department for Technology of Nanostructures and Devices; Institute for Physics of Microstructures of the Russian Academy of Sciences; GSP-105 Nizhny Novgorod 603950 Russia
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Noah MA, Flötotto D, Wang Z, Mittemeijer EJ. Single and multiple profile fitting of AES and XPS intensity-depth profiles for analysis of interdiffusion in thin films. SURF INTERFACE ANAL 2014. [DOI: 10.1002/sia.5369] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/25/2022]
Affiliation(s)
- Martin A. Noah
- Max Planck Institute for Intelligent Systems (formerly Max Planck Institute for Metals Research); Heisenbergstr. 3 D-70569 Stuttgart Germany
| | - David Flötotto
- Max Planck Institute for Intelligent Systems (formerly Max Planck Institute for Metals Research); Heisenbergstr. 3 D-70569 Stuttgart Germany
| | - Zumin Wang
- Max Planck Institute for Intelligent Systems (formerly Max Planck Institute for Metals Research); Heisenbergstr. 3 D-70569 Stuttgart Germany
| | - Eric J. Mittemeijer
- Max Planck Institute for Intelligent Systems (formerly Max Planck Institute for Metals Research); Heisenbergstr. 3 D-70569 Stuttgart Germany
- Institute for Materials Science; University of Stuttgart; Heisenbergstr. 3 D-70569 Stuttgart Germany
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Liu Y, Hofmann S, Wang JY. An analytical depth resolution function for the MRI model. SURF INTERFACE ANAL 2013. [DOI: 10.1002/sia.5319] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
Affiliation(s)
- Y. Liu
- Department of Physics; Shantou University; 243 Daxue Road; Shantou; 515063; Guangdong; China
| | - S. Hofmann
- Max Planck Institute for Intelligent Systems (formerly MPI for Metals Research); Heisenbergstrasse 3; D-70569; Stuttgart; Germany
| | - J. Y. Wang
- Department of Physics; Shantou University; 243 Daxue Road; Shantou; 515063; Guangdong; China
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Wang JY, Liu Y, Hofmann S, Kovac J. Influence of nonstationary atomic mixing on depth resolution in sputter depth profiling. SURF INTERFACE ANAL 2011. [DOI: 10.1002/sia.3855] [Citation(s) in RCA: 16] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- J. Y. Wang
- Department of Physics; Shantou University; 243 Daxue Road Shantou 515063 Guangdong China
| | - Y. Liu
- Department of Physics; Shantou University; 243 Daxue Road Shantou 515063 Guangdong China
| | - S. Hofmann
- Max Planck Institute for Metals Research; Heisenbergstrasse 3 D-70569 Stuttgart Germany
| | - J. Kovac
- Department of Surface Engineering and Optoelectronics F4; Jozef Stefan Institute; Jamova 39 1000 Ljubljana Slovenia
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Escobar Galindo R, Gago R, Albella J, Escobar Galindo R, Gago R, Lousa A. Comparative depth-profiling analysis of nanometer-metal multilayers by ion-probing techniques. Trends Analyt Chem 2009. [DOI: 10.1016/j.trac.2009.01.004] [Citation(s) in RCA: 49] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/25/2022]
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Depth resolution studies in SiGe delta-doped multilayers using ultralow-energy Cs[sup +] secondary ion mass spectrometry. ACTA ACUST UNITED AC 2007. [DOI: 10.1116/1.2429671] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
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13
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Depth resolution studies in SiGe delta-doped multilayers using ultralow-energy O[sub 2]+] secondary-ion-mass spectrometry. ACTA ACUST UNITED AC 2006. [DOI: 10.1116/1.2167986] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
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Wilken L, Hoffmann V, Wetzig K. Radio frequency glow discharge source with integrated voltage and current probes used for sputtering rate and emission yield measurements at insulating samples. Anal Bioanal Chem 2005; 383:424-33. [PMID: 15952004 DOI: 10.1007/s00216-005-3246-9] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/10/2005] [Revised: 04/04/2005] [Accepted: 04/08/2005] [Indexed: 10/25/2022]
Abstract
Radio frequency glow discharge optical emission spectroscopy (RF-GD-OES) is routinely used for the chemical analysis of solid samples. Two independent electrical signals from the discharge are required for quantification. When sputtering insulating samples, the voltage over the discharge is not directly measurable. The coupling capacity of the sample is required in order to calculate the discharge voltage. A procedure is outlined where the coupling capacity is determined using an electrical measurement without discharge. The calculated time-dependent discharge voltage and current are evaluated using a plasma equivalent circuit. An insulating sample is sputtered at constant cathode voltage and current. The emission yield for an aluminium line is comparable to that of conducting reference material.
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Affiliation(s)
- L Wilken
- Leibniz Institute for Solid State and Materials Research Dresden, P.O. Box 270116, 01171 Dresden, Germany.
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Hofmann S. Sputter-depth profiling for thin-film analysis. PHILOSOPHICAL TRANSACTIONS. SERIES A, MATHEMATICAL, PHYSICAL, AND ENGINEERING SCIENCES 2004; 362:55-75. [PMID: 15306276 DOI: 10.1098/rsta.2003.1304] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
Following a brief historical background, the concepts and the present state of sputter-depth profiling for thin-film analysis are outlined. There are two main branches: either the removed matter (as in mass- or optical-spectroscopy-based secondary-ion mass spectrometry or glow-discharge optical emission spectroscopy), or the remaining surface (as in Auger electron spectroscopy and X-ray photoelectron spectroscopy) is characterized. These complementary methods show the same result if there is no preferential sputtering of a component. The common root of both is the fundamental ion-solid interaction. Understanding of how the latter influences the depth resolution has led to important improvements in experimental profiling conditions such as sample rotation and the use of low-energy ions at glancing incidence. Modern surface-analysis instruments can provide high-resolution depth profiles on the nanometre scale. Mathematical models of different sophistication were developed to allow deconvolution of the measured profile or quantification by reconstruction of the in-depth distribution of composition. For the latter purpose, the usefulness of the so-called mixing-roughness-information (MRI) depth model is outlined on several thin-film structures (e.g. AlAs/GaAs and Si/Ge), including its extension to quantification of sputter-depth profiles in layer structures with preferential sputtering of one component (Ta/Si). Using the MRI model, diffusion coefficients at interfaces as low as 10(-22) m(2) s(-1) can be determined. Fundamental limitations of sputter-depth profiling are mainly traced back to the stochastic nature of primary-particle energy transfer to the sputtered particle, promoting atomic mixing and the development of surface roughness. Owing to more sophisticated experimental methods, such as low-energy cluster ion bombardment, glancing ion incidence or 'backside' sputtering, these ultimate limitations can be reduced to the atomic monolayer scale.
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Affiliation(s)
- S Hofmann
- Max Planck Institute for Metals Research, Heisenbergstrasse 3, 70569 Stuttgart, Germany.
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Hoffmann V, Dorka R, Wilken L, Hodoroaba VD, Wetzig K. Present possibilities of thin-layer analysis by GDOES. SURF INTERFACE ANAL 2003. [DOI: 10.1002/sia.1575] [Citation(s) in RCA: 63] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
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General Aspects of Trace Analytical Methods—IV. Recommendations for Nomenclature, Standard Procedures and Reporting of Experimental Data for Surface Analysis Techniques. PURE APPL CHEM 1979. [DOI: 10.1351/pac197951112243] [Citation(s) in RCA: 54] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
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