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For: Albrecht M, Nikitina IP, Nikolaev AE, Melnik YV, Dmitriev VA, Strunk HP. Dislocation Reduction in AlN and GaN Bulk Crystals Grown by HVPE. ACTA ACUST UNITED AC 1999. [DOI: 10.1002/(sici)1521-396x(199911)176:1<453::aid-pssa453>3.0.co;2-m] [Citation(s) in RCA: 20] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]

For:	Albrecht M, Nikitina IP, Nikolaev AE, Melnik YV, Dmitriev VA, Strunk HP. Dislocation Reduction in AlN and GaN Bulk Crystals Grown by HVPE. ACTA ACUST UNITED AC 1999. [DOI: 10.1002/(sici)1521-396x(199911)176:1<453::aid-pssa453>3.0.co;2-m] [Citation(s) in RCA: 20] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]

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Cited by Other Article(s)

Krysko M, Grzanka E, Domagala J, Leszczynski M. Influence of GaN substrate crystallographic quality on the intensity of AlGaN epitaxial layer X-ray diffraction peaks. CRYSTAL RESEARCH AND TECHNOLOGY 2015. [DOI: 10.1002/crat.201500051] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]

Properties of Fe-doped, thick, freestanding GaN crystals grown by hydride vapor phase epitaxy. ACTA ACUST UNITED AC 2007. [DOI: 10.1116/1.2718962] [Citation(s) in RCA: 22] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]

Characterization of bulk GaN rectifiers for hydrogen gas sensing. ACTA ACUST UNITED AC 2005. [DOI: 10.1116/1.2110343] [Citation(s) in RCA: 33] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]