Generation and EPR Spectroscopy of the First Silenyl Radicals, R2 C=Si. -R: Experiment and Theory

The first two persistent silenyl radicals (R₂ C=Si^. -R), with a half-life (t_1/2 ) of about 30 min, were generated and characterized by electron paramagnetic resonance (EPR) spectroscopy. The large hyperfine coupling constants (hfccs) (a(²⁹ Si_α )=137.5-148.0 G) indicate that the unpaired electron has substantial s character. DFT calculations, which are in good agreement with the experimentally observed hfccs, predict a strongly bent structure (∡C=Si-R=134.7-140.7°). In contrast, the analogous vinyl radical, R₂ C=C^. -R (t_1/2 ≈3 h), exhibits a small hfcc (a(¹³ C_α )=26.6 G) and has a nearly linear geometry (∡C=C-R=168.7°).

Activation of Homolytic Si-Zn and Si-Hg Bond Cleavage, Mediated by a Pt(0) Complex, via Novel Pt-Zn and Pt-Hg Compounds

The thermally stable [(tBuMe2 Si)2 M] (M=Zn, Hg) generate R3 Si(.) radicals in the presence of [(dmpe)Pt(PEt3 )2 ] at 60-80 °C. The reaction proceeds via hexacoordinate Pt complexes, (M=Zn (2 a and 2 b), M=Hg (3 a and 3 b)) which were isolated and characterized. Mild warming or photolysis of 2 or 3 lead to homolytic dissociation of the Pt-MSiR3 bond generating silyl radicals and novel unstable pentacoordinate platinum paramagnetic complexes (M=Zn (5), Hg (6)) whose structures were determined by EPR spectroscopy and DFT calculations.

A reversible two-electron redox system involving a divalent lead species

A reversible interconversion between Pb(ii) and its dianionic species bearing organic substituents is described.

Comparative chemistry of isolable divalent compounds of silicon, germanium, and tin

Recent studies of the synthesis, structures, spectroscopic properties, and reactions of a series of isolable metallylenes (R2E:, E = Si (1), Ge (2), and Sn (3); R2 = 1,1,4,4-tetrakis(trimethylsilyl)butane-1,4-diyl) are summarized. Because these group-14 metallylenes bear the same helmet-like ligand, a straightforward discussion of the element-dependence of the intrinsic properties of the group-14 element divalent compounds is possible. All these metallylenes were monomeric both in solution and in the solid state, indicating the effective steric protection by the ligand against dimerization. A small sigma-pi conjugation between C-Si(substituent) sigma orbitals and the vacant npz orbitals of divalent atoms in R2E: exists and the extent decreases in the order E = Si > Ge > Sn, as evidenced by UV-vis and NMR spectroscopies and X-ray crystallography. However, the extent of the sigma-pi conjugation in metallylenes 1-3 was much smaller than the electron-donating effects of neighboring nitrogen atoms in known stable cyclic diamino-substituted metallylenes, and hence metallylenes 1-3 are regarded as the least electronically perturbed. Comparative studies of the unique reactions among these metallylenes are also discussed.

Radical anion of isolable dialkylsilylene

By the reduction of an isolable dialkylsilylene, 2,2,5,5-[tetrakis(trimethylsilyl)]-1-silacyclopentane-1,1-diyl (1), with cesium, rubidium, potassium, sodium, and lithium 4,4'-di(tert-butyl)biphenylide in DME at low temperatures, the corresponding silylene radical anion 2 was generated as the first persistent silylene radical anion in solution and characterized by ESR spectroscopy. Radical anion 2 is rather stable at -70 degrees C in DME but decomposes rapidly at room temperature with a half-life time of ca. 20 min. The g-factor and 29Si hyperfine splitting constants (hfs's) of 2 are almost independent of the countercations, indicating that 2 exists as a free ion or a solvent-separated ion pair in a polar DME solution. A very small hfs due to the 29Si nucleus of the divalent silicon (3.0 mT) as well as a very large g-factor (2.0077) indicates that an unpaired electron is accommodated in the vacant 3ppi orbital of silylene 1.