Gadolinium Oxide and Scandium Oxide: Gate Dielectrics for GaN MOSFETs

Insulators for 2D nanoelectronics: the gap to bridge

Nanoelectronic devices based on 2D materials are far from delivering their full theoretical performance potential due to the lack of scalable insulators. Amorphous oxides that work well in silicon technology have ill-defined interfaces with 2D materials and numerous defects, while 2D hexagonal boron nitride does not meet required dielectric specifications. The list of suitable alternative insulators is currently very limited. Thus, a radically different mindset with respect to suitable insulators for 2D technologies may be required. We review possible solution scenarios like the creation of clean interfaces, production of native oxides from 2D semiconductors and more intensive studies on crystalline insulators.

Separation of thorium ions from wolframite and scandium concentrates using graphene oxide

The separation of rare metals from the ores and commercially available compounds is an important issue due to the need of their high purity in advanced materials and devices. Important examples of two highly important elements that co-exist in the ores are scandium and thorium. Scandium containing ores and consequently also commercially available scandium compounds often contain traces of thorium which is very difficult to separate. We used graphene oxide for the selective sorption of thorium ions from scandium and thorium mixtures originating from the mined ores as well as from commercially available scandium salts. Our results showed that graphene oxide has an extreme affinity towards thorium ions. After the sorption process the graphene oxide contained over 20 wt% of thorium while the amount of scandium sorbed on GO was very low. This phenomenon of high sorption selectivity of graphene oxide can be applied in industry for the purification of various chemicals containing scandium and for separation of thorium containing mixtures. Alternatively, this methodology can be used for preconcentration of thorium from low-grade ores and its further use in the new generation of nuclear reactors.

Advances in Hydrogen, Carbon Dioxide, and Hydrocarbon Gas Sensor Technology Using GaN and ZnO-Based Devices

In this paper, we review our recent results in developing gas sensors for hydrogen using various device structures, including ZnO nanowires and GaN High Electron Mobility Transistors (HEMTs). ZnO nanowires are particularly interesting because they have a large surface area to volume ratio, which will improve sensitivity, and because they operate at low current levels, will have low power requirements in a sensor module. GaN-based devices offer the advantage of the HEMT structure, high temperature operation, and simple integration with existing fabrication technology and sensing systems. Improvements in sensitivity, recoverability, and reliability are presented. Also reported are demonstrations of detection of other gases, including CO(2) and C(2)H(4) using functionalized GaN HEMTs. This is critical for the development of lab-on-a-chip type systems and can provide a significant advance towards a market-ready sensor application.