1
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Thakur D, Rangra VS. Study of conduction mechanisms of InSeSb nano-chalcogenide alloys. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:345501. [PMID: 38729173 DOI: 10.1088/1361-648x/ad49fb] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/29/2024] [Accepted: 05/10/2024] [Indexed: 05/12/2024]
Abstract
The electrical conduction mechanisms for bulk samples of In0.1Se0.9-xSbx(x= 0, 0.04, 0.08 and 0.12) nano-chalcogenide system, synthesized by the melt-quenching technique are investigated through current-voltage (I-V) characteristics. For the detailed study of conduction mechanism pellets of bulk samples are prepared. A thorough examination of electrical conductivity is done in the temperature range of 295-318 K and 0-50 V voltage range. FromI-Vmeasurements it is observed that samples are showing ohmic nature at lower field and non-ohmic nature at relatively higher field values. The temperature dependence of DC conductivity is analyzed using the Arrhenius relationship which is found to increase with Sb content. The value of activation energy and pre-exponential factor are calculated, which revealed that the conduction is due to the hopping of charge carriers among the localized states. Different parameters of Mott's variable range hopping such as degree of disorderT0, density of localized statesN(EF), hopping distance (Rhop), and hopping energy (W) are calculated. For the high field conduction process Poole-Frenkel, and Schottky processes are studied.
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Affiliation(s)
- Diksha Thakur
- Department of Physics, Himachal Pradesh University, Summer Hill, Shimla 175001, India
| | - Vir Singh Rangra
- Department of Physics, Himachal Pradesh University, Summer Hill, Shimla 175001, India
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2
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Deng Z. Angle-Dependent Raman Spectra of Crystal Polymorphs of GaO: A Computational Study. Chemphyschem 2024; 25:e202300129. [PMID: 38095211 DOI: 10.1002/cphc.202300129] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/21/2023] [Revised: 12/13/2023] [Indexed: 01/25/2024]
Abstract
Two crystal polymorphs of GaO consisting of GaO-H and GaO-T monolayers are proposed in this study. Based on the density functional theory calculations, the phonon dispersion demonstrates that both GaO-H and GaO-T monolayers could be stable. The band gaps of GaO-H and GaO-T monolayers are 1.51 and 1.43 eV, respectively. When an external electric field is applied, the band gaps of GaO monolayers are reduced dramatically, down to 0.13 eV with the field of 0.7 V/Å. Because of the decreased symmetry of C3v under an external electric field, more peaks of Raman spectra can be obtained. The angle-dependent Raman spectra ofA ' 1 1 ${{\rm{A}}{{^\prime}}_1^1 }$ andA ' 1 2 ${{\rm{A}}{{^\prime}}_1^2 }$ of GaO-H monolayer, andA 1 g 1 ${{\rm{A}}_{1{\rm{g}}}^1 }$ andA 1 g 2 ${{\rm{A}}_{1{\rm{g}}}^2 }$ of GaO-T monolayer are discussed seperately, with the incident lasers of 488 and 532 nm. Additionally, the Raman intensity distribution shows that the incident light should be parallel to the plane of the GaO monolayer to obtain more comparable Raman spectra. These investigations of the crystal polymorphs of GaO monolayers may guide the experimental investigations of GaO monolayers and potential optoelectronic applications.
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Affiliation(s)
- Zexiang Deng
- School of Science, Guilin University of Aerospace Technology, Guilin, 541004, China
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3
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Li S, Liu YT, Zhang YC, Du Y, Gao J, Zhai J, Liang Y, Han C, Zhu XD. Enhanced N 2 Adsorption and Activation by Combining Re Clusters and In Vacancies as Dual Sites for Efficient and Selective Electrochemical NH 3 Synthesis. NANO LETTERS 2024; 24:748-756. [PMID: 38166417 DOI: 10.1021/acs.nanolett.3c04416] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/04/2024]
Abstract
The electrochemical N2 reduction reaction (NRR) is a green and energy-saving sustainable technology for NH3 production. However, high activity and high selectivity can hardly be achieved in the same catalyst, which severely restricts the development of the electrochemical NRR. In2Se3 with partially occupied p-orbitals can suppress the H2 evolution reaction (HER), which shows excellent selectivity in the electrochemical NRR. The presence of VIn can simultaneously provide active sites and confine Re clusters through strong charge transfer. Additionally, well-isolated Re clusters stabilized on In2Se3 by the confinement effect of VIn result in Re-VIn active sites with maximum availability. By combining Re clusters and VIn as dual sites for spontaneous N2 adsorption and activation, the electrochemical NRR performance is enhanced significantly. As a result, the Re-In2Se3-VIn/CC catalyst delivers a high NH3 yield rate (26.63 μg h-1 cm-2) and high FEs (30.8%) at -0.5 V vs RHE.
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Affiliation(s)
- Shaoquan Li
- State key Laboratory Based of Eco-chemical Engineering College of Chemical Engineering, Qingdao University of Science & Technology, Qingdao 266042, China
- School of Materials Science and Engineering, Guangdong University of Petrochemical Technology, Maoming 525000, China
| | - Yi-Tao Liu
- Innovation Center for Textile Science and Technology, Donghua University, Shanghai 200051, China
| | - Yong-Chao Zhang
- State key Laboratory Based of Eco-chemical Engineering College of Chemical Engineering, Qingdao University of Science & Technology, Qingdao 266042, China
| | - Yue Du
- State key Laboratory Based of Eco-chemical Engineering College of Chemical Engineering, Qingdao University of Science & Technology, Qingdao 266042, China
| | - Jian Gao
- State key Laboratory Based of Eco-chemical Engineering College of Chemical Engineering, Qingdao University of Science & Technology, Qingdao 266042, China
| | - Jingru Zhai
- Weichai Holding Group Co., Ltd., Weifang 261000, China
| | - Yue Liang
- State key Laboratory Based of Eco-chemical Engineering College of Chemical Engineering, Qingdao University of Science & Technology, Qingdao 266042, China
| | - Caidi Han
- State key Laboratory Based of Eco-chemical Engineering College of Chemical Engineering, Qingdao University of Science & Technology, Qingdao 266042, China
| | - Xiao-Dong Zhu
- State key Laboratory Based of Eco-chemical Engineering College of Chemical Engineering, Qingdao University of Science & Technology, Qingdao 266042, China
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4
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Tran TA, Hai LS, Vi VTT, Nguyen CQ, Nghiem NT, Thao LTP, Hieu NN. Janus structures of the C 2h polymorph of gallium monochalcogenides: first-principles examination of Ga 2XY (X/Y = S, Se, Te) monolayers. RSC Adv 2023; 13:12153-12160. [PMID: 37082371 PMCID: PMC10112393 DOI: 10.1039/d3ra01079a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/16/2023] [Accepted: 04/13/2023] [Indexed: 04/22/2023] Open
Abstract
Group III monochalcogenide compounds can exist in different polymorphs, including the conventional D 3h and C 2h phases. Since the bulk form of the C 2h-group III monochalcogenides has been successfully synthesized [Phys. Rev. B: Condens. Matter Mater. Phys. 73 (2006) 235202], prospects for research on their corresponding monolayers have also been opened. In this study, we design and systematically consider a series of Janus structures formed from the two-dimensional C 2h phase of gallium monochalcogenide Ga2XY (X/Y = S, Se, Te) using first-principles simulations. It is demonstrated that the Janus Ga2XY monolayers are structurally stable and energetically favorable. Ga2XY monolayers exhibit high anisotropic mechanical features due to their anisotropic lattice structure. All Janus Ga2XY are indirect semiconductors with energy gap values in the range from 1.93 to 2.67 eV. Due to the asymmetrical structure, we can observe distinct vacuum level differences between the two surfaces of the examined Janus structures. Ga2XY monolayers have high electron mobility and their carrier mobilities are also highly directionally anisotropic. It is worth noting that the Ga2SSe monolayer possesses superior electron mobility, up to 3.22 × 103 cm2 V-1 s-1, making it an excellent candidate for potential applications in nanoelectronics and nanooptoelectronics.
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Affiliation(s)
- Tuan-Anh Tran
- Faculty of Applied Sciences, Ho Chi Minh City University of Technology and Education Ho Chi Minh City Vietnam
| | - Le S Hai
- Faculty of Applied Sciences, Ho Chi Minh City University of Technology and Education Ho Chi Minh City Vietnam
| | - Vo T T Vi
- Faculty of Basic Sciences, University of Medicine and Pharmacy, Hue University Hue Vietnam
| | - Cuong Q Nguyen
- Institute of Research and Development, Duy Tan University Da Nang Vietnam
- Faculty of Natural Sciences, Duy Tan University Da Nang Vietnam
| | - Nguyen T Nghiem
- Graduate University of Science and Technology, Vietnam Academy of Science and Technology Ha Noi Vietnam
| | - Le T P Thao
- Faculty of Physics, University of Science and Education, The University of Da Nang Da Nang Vietnam
| | - Nguyen N Hieu
- Institute of Research and Development, Duy Tan University Da Nang Vietnam
- Faculty of Natural Sciences, Duy Tan University Da Nang Vietnam
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5
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Cull W, Skowron ST, Hayter R, Stoppiello CT, Rance GA, Biskupek J, Kudrynskyi ZR, Kovalyuk ZD, Allen CS, Slater TJA, Kaiser U, Patanè A, Khlobystov AN. Subnanometer-Wide Indium Selenide Nanoribbons. ACS NANO 2023; 17:6062-6072. [PMID: 36916820 PMCID: PMC10061931 DOI: 10.1021/acsnano.3c00670] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/22/2023] [Accepted: 03/09/2023] [Indexed: 06/18/2023]
Abstract
Indium selenides (InxSey) have been shown to retain several desirable properties, such as ferroelectricity, tunable photoluminescence through temperature-controlled phase changes, and high electron mobility when confined to two dimensions (2D). In this work we synthesize single-layer, ultrathin, subnanometer-wide InxSey by templated growth inside single-walled carbon nanotubes (SWCNTs). Despite the complex polymorphism of InxSey we show that the phase of the encapsulated material can be identified through comparison of experimental aberration-corrected transmission electron microscopy (AC-TEM) images and AC-TEM simulations of known structures of InxSey. We show that, by altering synthesis conditions, one of two different stoichiometries of sub-nm InxSey, namely InSe or β-In2Se3, can be prepared. Additionally, in situ AC-TEM heating experiments reveal that encapsulated β-In2Se3 undergoes a phase change to γ-In2Se3 above 400 °C. Further analysis of the encapsulated species is performed using X-ray photoelectron spectroscopy (XPS), thermogravimetric analysis (TGA), energy dispersive X-ray analysis (EDX), and Raman spectroscopy, corroborating the identities of the encapsulated species. These materials could provide a platform for ultrathin, subnanometer-wide phase-change nanoribbons with applications as nanoelectronic components.
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Affiliation(s)
- William
J. Cull
- School
of Chemistry, University of Nottingham, Nottingham, NG7 2RD, United Kingdom
| | - Stephen T. Skowron
- School
of Chemistry, University of Nottingham, Nottingham, NG7 2RD, United Kingdom
| | - Ruth Hayter
- School
of Chemistry, University of Nottingham, Nottingham, NG7 2RD, United Kingdom
| | - Craig T. Stoppiello
- Nanoscale
and Microscale Research Centre, University
of Nottingham, Nottingham NG7 2QL, United Kingdom
| | - Graham A. Rance
- Nanoscale
and Microscale Research Centre, University
of Nottingham, Nottingham NG7 2QL, United Kingdom
| | - Johannes Biskupek
- Central
Facility of Electron Microscopy, Electron Microscopy Group of Materials
Science, University of Ulm, 89081 Ulm, Germany
| | - Zakhar R. Kudrynskyi
- School
of Physics, University of Nottingham, Nottingham NG7 2RD, United Kingdom
- Faculty
of Engineering, University of Nottingham, Nottingham NG7 2RD, United Kingdom
| | - Zakhar D. Kovalyuk
- Institute
for Problems of Materials Science, National Academy of Sciences of
Ukraine, Chernivtsi Branch, 58001 Chernivtsi, Ukraine
| | - Christopher S. Allen
- Electron
Physical Sciences Imaging Centre, Diamond
Light Source ltd, Didcot OX11 0DE, United Kingdom
| | - Thomas J. A. Slater
- Electron
Physical Sciences Imaging Centre, Diamond
Light Source ltd, Didcot OX11 0DE, United Kingdom
| | - Ute Kaiser
- Central
Facility of Electron Microscopy, Electron Microscopy Group of Materials
Science, University of Ulm, 89081 Ulm, Germany
| | - Amalia Patanè
- School
of Physics, University of Nottingham, Nottingham NG7 2RD, United Kingdom
| | - Andrei N. Khlobystov
- School
of Chemistry, University of Nottingham, Nottingham, NG7 2RD, United Kingdom
- Nanoscale
and Microscale Research Centre, University
of Nottingham, Nottingham NG7 2QL, United Kingdom
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6
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Babar ZUD, Raza A, Cassinese A, Iannotti V. Two Dimensional Heterostructures for Optoelectronics: Current Status and Future Perspective. Molecules 2023; 28:molecules28052275. [PMID: 36903520 PMCID: PMC10005545 DOI: 10.3390/molecules28052275] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/31/2022] [Revised: 02/05/2023] [Accepted: 02/16/2023] [Indexed: 03/05/2023] Open
Abstract
Researchers have found various families of two-dimensional (2D) materials and associated heterostructures through detailed theoretical work and experimental efforts. Such primitive studies provide a framework to investigate novel physical/chemical characteristics and technological aspects from micro to nano and pico scale. Two-dimensional van der Waals (vdW) materials and their heterostructures can be obtained to enable high-frequency broadband through a sophisticated combination of stacking order, orientation, and interlayer interactions. These heterostructures have been the focus of much recent research due to their potential applications in optoelectronics. Growing the layers of one kind of 2D material over the other, controlling absorption spectra via external bias, and external doping proposes an additional degree of freedom to modulate the properties of such materials. This mini review focuses on current state-of-the-art material design, manufacturing techniques, and strategies to design novel heterostructures. In addition to a discussion of fabrication techniques, it includes a comprehensive analysis of the electrical and optical properties of vdW heterostructures (vdWHs), particularly emphasizing the energy-band alignment. In the following sections, we discuss specific optoelectronic devices, such as light-emitting diodes (LEDs), photovoltaics, acoustic cavities, and biomedical photodetectors. Furthermore, this also includes a discussion of four different 2D-based photodetector configurations according to their stacking order. Moreover, we discuss the challenges that remain to be addressed in order to realize the full potential of these materials for optoelectronics applications. Finally, as future perspectives, we present some key directions and express our subjective assessment of upcoming trends in the field.
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Affiliation(s)
- Zaheer Ud Din Babar
- Scuola Superiore Meridionale (SSM), University of Naples Federico II, Largo S. Marcellino 10, 80138 Naples, Italy
- Department of Physics “Ettore Pancini”, University of Naples Federico II, Piazzale Tecchio 80, 80125 Naples, Italy
| | - Ali Raza
- Department of Physics “Ettore Pancini”, University of Naples Federico II, Piazzale Tecchio 80, 80125 Naples, Italy
| | - Antonio Cassinese
- Department of Physics “Ettore Pancini”, University of Naples Federico II, Piazzale Tecchio 80, 80125 Naples, Italy
- CNR–SPIN (Institute for Superconductors, Oxides and Other Innovative Materials and Devices), Piazzale V. Tecchio 80, 80125 Naples, Italy
| | - Vincenzo Iannotti
- Department of Physics “Ettore Pancini”, University of Naples Federico II, Piazzale Tecchio 80, 80125 Naples, Italy
- CNR–SPIN (Institute for Superconductors, Oxides and Other Innovative Materials and Devices), Piazzale V. Tecchio 80, 80125 Naples, Italy
- Correspondence:
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7
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Zou H, Wang X, Zhou K, Li Y, Fu Y, Zhang L. Electronic property modulation in two-dimensional lateral superlattices of monolayer transition metal dichalcogenides. NANOSCALE 2022; 14:10439-10448. [PMID: 35816154 DOI: 10.1039/d2nr02189g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Fabricating lateral heterostructures (HSs) and superlattices (SLs) provides a unique degree of freedom for modulating the physical properties of two-dimensional (2D) materials by varying the chemical component, geometric size and interface structure in the ultra-thin atomic thickness limit. While a variety of 2D lateral HSs/SLs have been synthesized, especially for transition metal dichalcogenides (TMDs), how such structures affect quantitatively the physical properties of 2D materials has not yet been established. We herein explore electronic property modulation in 2D lateral SLs of monolayer TMDs through first-principles high-throughput calculations. The dependence of the electronic structure, bandgap, carrier effective masses, charge density overlap on chemical components, interface type, and sub-lattice size of lateral TMD-SLs are investigated. We find that by comparison with their random alloy counterparts, the lateral TMD-SLs exhibit generally type-II band alignment, a wider range of bandgap tunability, larger carrier effective masses, and stronger electron-hole charge separation tendency. The bandgap variation with a sub-lattice size shows larger bowing parameters for the SLs with heterogeneous anions, by comparison with the homogeneous anion cases. A similar behavior is observed for the SLs with an armchair-type interface, by comparison with the zigzag-type interface cases. Further analyses reveal that the underlying physical mechanism can be attributed to the synergistic interplay among the band offset of sub-lattices, quantum confinement effect, and existing internal strain.
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Affiliation(s)
- Hongshuai Zou
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials of MOE and College of Materials Science and Engineering, Jilin University, Changchun 130012, China.
| | - Xinjiang Wang
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China.
| | - Kun Zhou
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials of MOE and College of Materials Science and Engineering, Jilin University, Changchun 130012, China.
| | - Yawen Li
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials of MOE and College of Materials Science and Engineering, Jilin University, Changchun 130012, China.
| | - Yuhao Fu
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China.
| | - Lijun Zhang
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials of MOE and College of Materials Science and Engineering, Jilin University, Changchun 130012, China.
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8
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Pham PV, Bodepudi SC, Shehzad K, Liu Y, Xu Y, Yu B, Duan X. 2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges. Chem Rev 2022; 122:6514-6613. [PMID: 35133801 DOI: 10.1021/acs.chemrev.1c00735] [Citation(s) in RCA: 102] [Impact Index Per Article: 51.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
A grand family of two-dimensional (2D) materials and their heterostructures have been discovered through the extensive experimental and theoretical efforts of chemists, material scientists, physicists, and technologists. These pioneering works contribute to realizing the fundamental platforms to explore and analyze new physical/chemical properties and technological phenomena at the micro-nano-pico scales. Engineering 2D van der Waals (vdW) materials and their heterostructures via chemical and physical methods with a suitable choice of stacking order, thickness, and interlayer interactions enable exotic carrier dynamics, showing potential in high-frequency electronics, broadband optoelectronics, low-power neuromorphic computing, and ubiquitous electronics. This comprehensive review addresses recent advances in terms of representative 2D materials, the general fabrication methods, and characterization techniques and the vital role of the physical parameters affecting the quality of 2D heterostructures. The main emphasis is on 2D heterostructures and 3D-bulk (3D) hybrid systems exhibiting intrinsic quantum mechanical responses in the optical, valley, and topological states. Finally, we discuss the universality of 2D heterostructures with representative applications and trends for future electronics and optoelectronics (FEO) under the challenges and opportunities from physical, nanotechnological, and material synthesis perspectives.
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Affiliation(s)
- Phuong V Pham
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Srikrishna Chanakya Bodepudi
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Khurram Shehzad
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Yuan Liu
- School of Physics and Electronics, Hunan University, Hunan 410082, China
| | - Yang Xu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Bin Yu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles (UCLA), Los Angeles, California 90095-1569, United States
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9
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Wang B, Sun Y, Yang G. SiCP 4 Monolayer with a Direct Band Gap and High Carrier Mobility for Photocatalytic Water Splitting. J Phys Chem Lett 2022; 13:190-197. [PMID: 34967221 DOI: 10.1021/acs.jpclett.1c03708] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Photocatalytic water splitting is a promising method that uses sunlight to generate hydrogen from water to provide clean and renewable energy resources. Two-dimensional materials with abundant active sites are ideal candidates for achieving this goal; however, few of the known ones can meet the rigorous requirement of photocatalytic water splitting. By using first-principles swarm-intelligence search calculations, we have successfully identified two new semiconducting SiCP2 and SiCP4 monolayers. Their band-edge heights evidently straddle the redox potentials of water. For the more prominent SiCP4 monolayer, additional external biases of 0.32 V for water oxidation and 0.03 V for the hydrogen reduction half-reaction would be enough to drive its reaction sequences at pH 0, and it can spontaneously proceed to the water oxidation half-reaction in a neutral solution. Interestingly, the excellent optical absorbance ability (∼104 cm-1) and high carrier mobility (∼105 cm2 V-1 s-1) of SiCP2 and SiCP4 facilitate the utilization of sunlight and the fast transportation of photogenerated carriers. All of these properties make SiCP2 and SiCP4 monolayers promising candidates for applications in photocatalytic water splitting.
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Affiliation(s)
- Bo Wang
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China
| | - Yuanhui Sun
- Department of Chemistry and Biochemistry, California State University, Northridge, Northridge, California 91330, United States
| | - Guochun Yang
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China
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10
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Cui Z, Zhang XH, Sun Y, Liu Y, Yang G. Prediction of Novel Boron-carbon Based Clathrates. Phys Chem Chem Phys 2022; 24:16884-16890. [DOI: 10.1039/d2cp01783k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Clathrates are inclusion compounds featured with host framework cages and trapped guest atoms or small molecules. Recently, the first boron-carbon (B-C) clathrate SrB3C3 was successfully synthesized at high pressures near...
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11
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Li T, Luo S, Wang X, Zhang L. Alternative Lone-Pair ns 2 -Cation-Based Semiconductors beyond Lead Halide Perovskites for Optoelectronic Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2008574. [PMID: 34060151 DOI: 10.1002/adma.202008574] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/19/2020] [Revised: 03/22/2021] [Indexed: 06/12/2023]
Abstract
Lead halide perovskites have emerged in the last decade as advantageous high-performance optoelectronic semiconductors, and have undergone rapid development for diverse applications such as solar cells, light-emitting diodes , and photodetectors. While material instability and lead toxicity are still major concerns hindering their commercialization, they offer promising prospects and design principles for developing promising optoelectronic materials. The distinguished optoelectronic properties of lead halide perovskites stem from the Pb2+ cation with a lone-pair 6s2 electronic configuration embedded in a mixed covalent-ionic bonding lattice. Herein, we summarize alternative Pb-free semiconductors containing lone-pair ns2 cations, intending to offer insights for developing potential optoelectronic materials other than lead halide perovskites. We start with the physical underpinning of how the ns2 cations within the material lattice allow for superior optoelectronic properties. We then review the emerging Pb-free semiconductors containing ns2 cations in terms of structural dimensionality, which is crucial for optoelectronic performance. For each category of materials, the research progresses on crystal structures, electronic/optical properties, device applications, and recent efforts for performance enhancements are overviewed. Finally, the issues hindering the further developments of studied materials are surveyed along with possible strategies to overcome them, which also provides an outlook on the future research in this field.
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Affiliation(s)
- Tianshu Li
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials of MOE, and School of Materials Science and Engineering, Jilin University, Changchun, 130012, China
| | - Shulin Luo
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials of MOE, and School of Materials Science and Engineering, Jilin University, Changchun, 130012, China
| | - Xinjiang Wang
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials of MOE, and School of Materials Science and Engineering, Jilin University, Changchun, 130012, China
| | - Lijun Zhang
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials of MOE, and School of Materials Science and Engineering, Jilin University, Changchun, 130012, China
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12
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Zhang Z, Yuan Y, Zhou W, Chen C, Yuan S, Zeng H, Fu YS, Zhang W. Strain-Induced Bandgap Enhancement of InSe Ultrathin Films with Self-Formed Two-Dimensional Electron Gas. ACS NANO 2021; 15:10700-10709. [PMID: 34080842 DOI: 10.1021/acsnano.1c03724] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Atomically thin indium selenide (InSe) is a representative two-dimensional (2D) family that have recently attracted extensive interest for their intriguing emerging physics and potential optoelectronic applications with high-performance. Here, by utilizing molecular beam epitaxy and scanning tunneling microscopy, we report a controlled synthesis of InSe thin films down to the monolayer limit and characterization of their electronic properties at atomic scale. Highly versatile growth conditions are developed to fabricate well crystalline InSe films, with a reversible and controllable phase transformation between InSe and In2Se3. The band gap size of InSe films, as enhanced by quantum confinement, increases with decreasing film thickness. Near various categories of lattice imperfections, the band gap becomes significantly enlarged, resulting in a type-I band alignments for lateral heterojunctions. Such band gap enhancement, as unveiled from our first-principles calculations, is ascribed to the local compressive strain imposed by the lattice imperfections. Moreover, InSe films host highly conductive 2D electron gas, manifesting prominent quasiparticle scattering signatures. The 2D electron gas is self-formed via substrate doping of electrons, which shift the Fermi level above the confinement-quantized conduction band. Our study identifies InSe ultrathin film as an appealing system for both fundamental research and potential applications in nanoelectrics and optoelectronics.
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Affiliation(s)
- Zhimo Zhang
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Yuan Yuan
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Weiqing Zhou
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Chen Chen
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Science at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Shengjun Yuan
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Hualing Zeng
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Science at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Ying-Shuang Fu
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Wenhao Zhang
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
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13
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Lee S, Jung JE, Kim HG, Lee Y, Park JM, Jang J, Yoon S, Ghosh A, Kim M, Kim J, Na W, Kim J, Choi HJ, Cheong H, Kim K. γ-GeSe: A New Hexagonal Polymorph from Group IV-VI Monochalcogenides. NANO LETTERS 2021; 21:4305-4313. [PMID: 33970636 DOI: 10.1021/acs.nanolett.1c00714] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The family of group IV-VI monochalcogenides has an atomically puckered layered structure, and their atomic bond configuration suggests the possibility for the realization of various polymorphs. Here, we report the synthesis of the first hexagonal polymorph from the family of group IV-VI monochalcogenides, which is conventionally orthorhombic. Recently predicted four-atomic-thick hexagonal GeSe, so-called γ-GeSe, is synthesized and clearly identified by complementary structural characterizations, including elemental analysis, electron diffraction, high-resolution transmission electron microscopy imaging, and polarized Raman spectroscopy. The electrical and optical measurements indicate that synthesized γ-GeSe exhibits high electrical conductivity of 3 × 105 S/m, which is comparable to those of other two-dimensional layered semimetallic crystals. Moreover, γ-GeSe can be directly grown on h-BN substrates, demonstrating a bottom-up approach for constructing vertical van der Waals heterostructures incorporating γ-GeSe. The newly identified crystal symmetry of γ-GeSe warrants further studies on various physical properties of γ-GeSe.
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Affiliation(s)
- Sol Lee
- Department of Physics, Yonsei University, Seoul 03722, Korea
- Center for Nanomedicine, Institute for Basic Science (IBS), Seoul 03722, Korea
| | - Joong-Eon Jung
- Department of Physics, Yonsei University, Seoul 03722, Korea
| | - Han-Gyu Kim
- Department of Physics, Yonsei University, Seoul 03722, Korea
| | - Yangjin Lee
- Department of Physics, Yonsei University, Seoul 03722, Korea
- Center for Nanomedicine, Institute for Basic Science (IBS), Seoul 03722, Korea
| | - Je Myoung Park
- Department of Physics, Sogang University, Seoul 04107, Korea
| | - Jeongsu Jang
- Department of Physics, Yonsei University, Seoul 03722, Korea
| | - Sangho Yoon
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 37673, Korea
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Korea
| | - Arnab Ghosh
- Department of Physics, Yonsei University, Seoul 03722, Korea
| | - Minseol Kim
- Department of Physics, Yonsei University, Seoul 03722, Korea
| | - Joonho Kim
- Department of Physics, Yonsei University, Seoul 03722, Korea
| | - Woongki Na
- Department of Physics, Sogang University, Seoul 04107, Korea
| | - Jonghwan Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 37673, Korea
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Korea
| | | | - Hyeonsik Cheong
- Department of Physics, Sogang University, Seoul 04107, Korea
| | - Kwanpyo Kim
- Department of Physics, Yonsei University, Seoul 03722, Korea
- Center for Nanomedicine, Institute for Basic Science (IBS), Seoul 03722, Korea
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14
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Wang X, Zhao X, Wang X, Li H, He X, Zhang L. Discovery of New Phases of Bismuth Oxyselenide Semiconductor Bi
2
OSe
2
by Global Structure Search Approach. ADVANCED THEORY AND SIMULATIONS 2021. [DOI: 10.1002/adts.202000316] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
Affiliation(s)
- Xueting Wang
- State Key Laboratory of Superhard Materials and College of Physics Jilin University Changchun 130012 China
| | - Xingang Zhao
- Key Laboratory of Automobile Materials of MOE and College of Materials Science and Engineering Jilin University Changchun 130012 China
| | - Xinjiang Wang
- State Key Laboratory of Superhard Materials and College of Physics Jilin University Changchun 130012 China
| | - Hongdong Li
- State Key Laboratory of Superhard Materials and College of Physics Jilin University Changchun 130012 China
| | - Xin He
- Key Laboratory of Automobile Materials of MOE and College of Materials Science and Engineering Jilin University Changchun 130012 China
| | - Lijun Zhang
- Key Laboratory of Automobile Materials of MOE and College of Materials Science and Engineering Jilin University Changchun 130012 China
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15
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Sun M, Wang W, Zhao Q, Gan X, Sun Y, Jie W, Wang T. ε-InSe single crystals grown by a horizontal gradient freeze method. CrystEngComm 2020. [DOI: 10.1039/d0ce01271h] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/21/2023]
Abstract
Indium selenide (InSe) single crystals have been considered as promising candidates for future optical, electrical, and optoelectronic device applications.
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Affiliation(s)
- Maojun Sun
- State Key Laboratory of Solidification Processing
- Northwestern Polytechnical University
- Xi'an
- P. R. China
- Key Laboratory of Radiation Detection Materials and Devices
| | - Wei Wang
- State Key Laboratory of Solidification Processing
- Northwestern Polytechnical University
- Xi'an
- P. R. China
- Key Laboratory of Radiation Detection Materials and Devices
| | - Qinghua Zhao
- State Key Laboratory of Solidification Processing
- Northwestern Polytechnical University
- Xi'an
- P. R. China
- Key Laboratory of Radiation Detection Materials and Devices
| | - Xuetao Gan
- School of Physical Science and Technology
- Northwestern Polytechnical University
- Xi'an
- P. R. China
| | - Yuanhui Sun
- Department of Chemistry and Biochemistry
- California State University Northridge
- Northridge
- USA
| | - Wanqi Jie
- State Key Laboratory of Solidification Processing
- Northwestern Polytechnical University
- Xi'an
- P. R. China
- Key Laboratory of Radiation Detection Materials and Devices
| | - Tao Wang
- State Key Laboratory of Solidification Processing
- Northwestern Polytechnical University
- Xi'an
- P. R. China
- Key Laboratory of Radiation Detection Materials and Devices
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