Large magnetoresistance in few layer graphene stacks with current perpendicular to plane geometry

Giant magnetoresistance of Dirac plasma in high-mobility graphene

The most recognizable feature of graphene's electronic spectrum is its Dirac point, around which interesting phenomena tend to cluster. At low temperatures, the intrinsic behaviour in this regime is often obscured by charge inhomogeneity1,2 but thermal excitations can overcome the disorder at elevated temperatures and create an electron-hole plasma of Dirac fermions. The Dirac plasma has been found to exhibit unusual properties, including quantum-critical scattering3-5 and hydrodynamic flow6-8. However, little is known about the plasma's behaviour in magnetic fields. Here we report magnetotransport in this quantum-critical regime. In low fields, the plasma exhibits giant parabolic magnetoresistivity reaching more than 100 per cent in a magnetic field of 0.1 tesla at room temperature. This is orders-of-magnitude higher than magnetoresistivity found in any other system at such temperatures. We show that this behaviour is unique to monolayer graphene, being underpinned by its massless spectrum and ultrahigh mobility, despite frequent (Planckian limit) scattering3-5,9-14. With the onset of Landau quantization in a magnetic field of a few tesla, where the electron-hole plasma resides entirely on the zeroth Landau level, giant linear magnetoresistivity emerges. It is nearly independent of temperature and can be suppressed by proximity screening15, indicating a many-body origin. Clear parallels with magnetotransport in strange metals12-14 and so-called quantum linear magnetoresistance predicted for Weyl metals16 offer an interesting opportunity to further explore relevant physics using this well defined quantum-critical two-dimensional system.

Engineering of Advanced Materials for High Magnetic Field Sensing: A Review

Advanced scientific and industrial equipment requires magnetic field sensors with decreased dimensions while keeping high sensitivity in a wide range of magnetic fields and temperatures. However, there is a lack of commercial sensors for measurements of high magnetic fields, from ∼1 T up to megagauss. Therefore, the search for advanced materials and the engineering of nanostructures exhibiting extraordinary properties or new phenomena for high magnetic field sensing applications is of great importance. The main focus of this review is the investigation of thin films, nanostructures and two-dimensional (2D) materials exhibiting non-saturating magnetoresistance up to high magnetic fields. Results of the review showed how tuning of the nanostructure and chemical composition of thin polycrystalline ferromagnetic oxide films (manganites) can result in a remarkable colossal magnetoresistance up to megagauss. Moreover, by introducing some structural disorder in different classes of materials, such as non-stoichiometric silver chalcogenides, narrow band gap semiconductors, and 2D materials such as graphene and transition metal dichalcogenides, the possibility to increase the linear magnetoresistive response range up to very strong magnetic fields (50 T and more) and over a large range of temperatures was demonstrated. Approaches for the tailoring of the magnetoresistive properties of these materials and nanostructures for high magnetic field sensor applications were discussed and future perspectives were outlined.

Hybrid reduced graphene oxide nanosheets with negative magnetoresistance for the diagnosis of hypoglycemia

Few glucometers are available to easily and quickly measure low blood glucose levels (≤4 mmol L^-1) from a small amount of blood samples. Here, a hybrid reduced graphene oxide (rGO)-based magnetoresistance (MR) sensor has been developed to monitor blood glucose levels to quickly detect hypoglycemia. Hybrid rGO nanosheets, incorporating Fe₅₀Co₅₀ nanoparticles onto rGO nanosheets, with an unusual large negative MR (-5.7%) at room temperature under a small magnetic field (9.5 kOe) have been successfully fabricated through a one-pot reaction. To quickly detect the low concentration of glucose in a small amount of blood (1 μL), a two-step process has been further developed by using the "sandwich" structural MR sensor. The results show that the higher the negative MR value of the sensor, the lower the concentration of glucose that can be detected. A linear relationship between the MR and the concentration of the spiked plasma glucose taken from streptozotocin-induced diabetic rats can be found when the concentration of glucose is in the range of 0-6 mmol L^-1. The limit of detection (LOD) of this MR glucose sensor is 0.867 mmol L^-1. The accuracy of the rGO-based MR sensor is improved in measuring low concentration of plasma glucose as compared to that of a commercialized glucometer. Furthermore, the selectivity of the rGO-based MR sensor has been studied. The results demonstrate that the rGO-based MR sensor is a flexible and sensitive detection platform and specifically suitable for monitoring low concentrations of plasma glucose to prevent from hypoglycemia.

Benchmarking Noise and Dephasing in Emerging Electrical Materials for Quantum Technologies

As quantum technologies develop, a specific class of electrically conducting materials is rapidly gaining interest because they not only form the core quantum-enabled elements in superconducting qubits, semiconductor nanostructures, or sensing devices, but also the peripheral circuitry. The phase coherence of the electronic wave function in these emerging materials will be crucial when incorporated in the quantum architecture. The loss of phase memory, or dephasing, occurs when a quantum system interacts with the fluctuations in the local electromagnetic environment, which manifests in "noise" in the electrical conductivity. Hence, characterizing these materials and devices therefrom, for quantum applications, requires evaluation of both dephasing and noise, although there are very few materials where these properties are investigated simultaneously. Here, the available data on magnetotransport and low-frequency fluctuations in electrical conductivity are reviewed to benchmark the dephasing and noise. The focus is on new materials that are of direct interest to quantum technologies. The physical processes causing dephasing and noise in these systems are elaborated, the impact of both intrinsic and extrinsic parameters from materials synthesis and devices realization are evaluated, and it is hoped that a clearer pathway to design and characterize both material and devices for quantum applications is thus provided.

Hybrid Reduced Graphene Oxide with Special Magnetoresistance for Wireless Magnetic Field Sensor

Very few materials show large magnetoresistance (MR) under a low magnetic field at room temperature, which causes the barrier to the development of magnetic field sensors for detecting low-level electromagnetic radiation in real- time. Here, a hybrid reduced graphene oxide (rGO)-based magnetic field sensor is produced by in situ deposition of FeCo nanoparticles (NPs) on reduced graphene oxide (rGO). Special quantum magnetoresistance (MR) of the hybrid rGO is observed, which unveils that Abrikosov's quantum model for layered materials can occur in hybrid rGO; meanwhile, the MR value can be tunable by adjusting the particle density of FeCo NPs on rGO nanosheets. Very high MR value up to 21.02 ± 5.74% at 10 kOe at room temperature is achieved, and the average increasing rate of resistance per kOe is up to 0.9282 Ω kOe-1. In this paper, we demonstrate that the hybrid rGO-based magnetic field sensor can be embedded in a wireless system for real-time detection of low-level electromagnetic radiation caused by a working mobile phone. We believe that the two-dimensional nanomaterials with controllable MR can be integrated with a wireless system for the future connected society.

Magnetic Sensing Properties of PVD Carbon Films Containing Vertically Aligned Crystallites

The demands for magnetic sensors are uprising due to the rapid development of smart equipments and internet of things. Exploring magnetic sensitive materials which are easily obtainable and of low cost thereby become of great significance. Carbon film with crystallized features was recently reported with room-temperature ferro-magnetism and magnetoresistance, owing to its spin-orbital interactions at the graphene edges and temperature-depending carrier transport properties. Such phenomena indicate that the film can serve as a novel magnetic sensitive material. In this study, carbon films with vertically aligned nano-crystallites were obtained by a plasma-assisted physical vapor deposition (PVD) method. Basic test circuits were built on the films, and the sensing properties were investigated in external magnetic fields with different intensities and relative angles to the films surface. The results showed that the carbon-based sensing devices were capable to work in the temperature region of 250-400 K. The minimum field intensity and angle change to which the device can respond were 1 mT and 2°. By substrate-introduced enhancement, the maximum changing-rate of the film resistance could reach to 1100%/T. This research pointed out a practical and simple way to build magnetic sensors with PVD carbon films.

Room temperature Co-doped manganite/graphene sensor operating at high pulsed magnetic fields

The demand to increase the sensitivity to magnetic field in a broad magnetic field ranges has led to the research of novel materials for sensor applications. Therefore, the hybrid system consisting of two different magnetoresistive materials – nanostructured Co-doped manganite La_1−xSr_x(Mn_1−yCo_y)_zO₃ and single- and few-layer graphene – were combined and investigated as potential system for magnetic field sensing. The negative colossal magnetoresistance (CMR) of manganite-cobaltite and positive one of graphene gives the possibility to increase the sensitivity to magnetic field of the hybrid sensor. The performed magnetoresistance (MR) measurements of individual few layer (n = 1–5) graphene structures revealed the highest MR values for three-layer graphene (3LG), whereas additional Co-doping increased the MR values of nanostructured manganite films. The connection of 3LG graphene and Co-doped magnanite film in a voltage divider configuration significantly increased the sensitivity of the hybrid sensor at low and intermediate magnetic fields (1–2 T): 70 mV/VT of hybrid sensor in comparison with 56 mV/VT for 3LG and 12 mV/VT for Co-doped magnanite film, respectively, and broadened the magnetic field operation range (0.1–20) T of the produced sensor prototype.

Superior Magnetoresistance Performance of Hybrid Graphene Foam/Metal Sulfide Nanocrystal Devices

Interfaces between metals and semiconducting materials can inevitably influence the magnetotransport properties, which are crucial for technological applications ranging from magnetic sensing to storage devices. By taking advantage of this, a metallic graphene foam is integrated with semiconducting copper-based metal sulfide nanocrystals, i.e., Cu₂ZnSnS₄ (copper-zinc-tin-sulfur) without direct chemical bonding and structural damage, which creates numerous nanoboundaries that can be basically used to tune the magnetotransport properties. Herein, the magnetoresistance of a graphene foam is enhanced from nearly 90 to 130% at room temperature and under the application of 5 T magnetic field strength due to the addition of Cu₂ZnSnS₄ nanocrystals in high densities. We believe that the enhancement of magnetoresistance in hybrid graphene foam/Cu₂ZnSnS₄ nanocrystals is due to the evolution of the mobility fluctuation mechanism, triggered by the formation of nanoboundaries. Incorporating Cu₂ZnSnS₄ nanocrystals into a graphene foam not only provides an effective way to further enhance the magnitude of magnetoresistance but also opens a suitable window to achieve efficient and highly functional magnetic sensors with a large, linear, and controllable response.

Giant magnetoresistance switching in multilayer graphene grown on cobalt

Magnetic multilayer devices, showing large magnetoresistance (MR) effects, have revolutionized magnetic sensing and data storage sectors over the last few decades. Two-dimensional van der Waals layered materials are relatively new entrants in this area, and these materials can give rise to large MR effects with diverse physical origins. Here we report observation of giant MR switching (∼10 orders of magnitude) in multilayered graphene grown on cobalt (Co) substrates, which persists even at room temperature. The origin of this effect is linked with weak interlayer coupling of the graphene stacks, which gives rise to an 'interlayer MR' effect. This effect is found to be robust against some degree of inhomogeneity in the graphene stack, making it an attractive platform for the emerging area of flexible magnetic sensorics.

Hierarchical Multicomponent Inorganic Metamaterials: Intrinsically Driven Self-Assembly at the Nanoscale

Increasingly intricate in their composition and structural organization, hierarchical multicomponent metamaterials with nonlinear spatially reconfigurable functionalities challenge the intrinsic constraints of natural materials, revealing tremendous potential for the advancement of biochemistry, nanophotonics, and medicine. Recent breakthroughs in high-resolution nanofabrication utilizing ultranarrow, precisely controlled ion or laser beams have enabled assembly of architectures of unprecedented structural and functional complexity, yet costly, time- and energy-consuming high-resolution sequential techniques do not operate effectively at industry-required scale. Inspired by the fictional Baron Munchausen's fruitless attempt to pull himself up, it is demonstrated that metamaterials can undergo intrinsically driven self-assembly, metaphorically pulling themselves up into existence. These internal drivers hold a key to unlocking the potential of metamaterials and mapping a new direction for the large-area, cost-efficient self-organized fabrication of practical devices. A systematic exploration of these efforts is presently missing, and the driving forces governing the intrinsically driven self-assembly are yet to be fully understood. Here, recent progress in the self-organized formation and self-propelled growth of complex hierarchical multicomponent metamaterials is reviewed, with emphasis on key principles, salient features, and potential limitations of this family of approaches. Special stress is placed on self-assembly driven by plasma, current in liquid, ultrasonic, and similar highly energetic effects, which enable self-directed formation of metamaterials with unique properties and structures.

Tuning magnetoresistance in molybdenum disulphide and graphene using a molecular spin transition

Coupling spins of molecular magnets to two-dimensional (2D) materials provides a framework to manipulate the magneto-conductance of 2D materials. However, with most molecules, the spin coupling is usually weak and devices fabricated from these require operation at low temperatures, which prevents practical applications. Here, we demonstrate field-effect transistors based on the coupling of a magnetic molecule quinoidal dithienyl perylenequinodimethane (QDTP) to 2D materials. Uniquely, QDTP switches from a spin-singlet state at low temperature to a spin-triplet state above 370 K, and the spin transition can be electrically transduced by both graphene and molybdenum disulphide. Graphene-QDTP shows hole-doping and a large positive magnetoresistance ( ~ 50%), while molybdenum disulphide-QDTP demonstrates electron-doping and a switch to large negative magnetoresistance ( ~ 100%) above the magnetic transition. Our work shows the promise of spin detection at high temperature by coupling 2D materials and molecular magnets.

Engineering a coupling between magnetic molecules and conducting materials at room temperature could help the development of spintronic devices. Loh et al. show that the spin state of QDTP molecules deposited on graphene and MoS₂ couples to their electronic structure, affecting magnetotransport.

Thickness dependent friction on few-layer MoS2, WS2, and WSe2

Nanoscale friction on two-dimensional (2D) materials is closely associated with their mechanical, electronic and photonic properties, which can be modulated through changing thickness. Here, we investigated the thickness dependent friction on few-layer MoS₂, WS₂, and WSe₂ using atomic force microscope at ambient condition and found two different behavior. When a sharp tip was used, the regular behavior of decreasing friction with increasing thickness was reproduced. However, when a pre-worn and flat-ended tip was used, we observed an abnormal trend: on WS₂ and WSe₂, friction increased monotonically with thickness, while for MoS₂, friction decreased from monolayer to bilayer and then subsequently increased with thickness. As suggested by the density functional theory calculation, we hypothesize that the overall frictional behavior is a competition between the puckering effect and the intrinsic energy corrugation within the compressive region. By varying the relative strength of the puckering effect via changing the tip shape, the dependence of friction on sample thickness can be tuned. Our results also suggest a potential means to measure intrinsic frictional properties of 2D materials with minimum impact from puckering.

Magnetoresistance and Hall resistivity of semimetal WTe2 ultrathin flakes

This article reports the characterization of WTe₂ thin flake magnetoresistance and Hall resistivity. We found it does not exhibit magnetoresistance saturation when subject to high fields, in a manner similar to their bulk characteristics. The linearity of Hall resistivity in our devices confirms the compensation of electrons and holes. By relating experimental results to a classic two-band model, the lower magnetoresistance values in our samples is demonstrated to be caused by decreased carrier mobility. The dependence of mobility on temperature indicates the main role of optical phonon scattering at high temperatures. Our results provide more detailed information on carrier behavior and scattering mechanisms in WTe₂ thin films.

Strain and electric-field tunable valley states in 2D van der Waals MoTe2/WTe2 heterostructures

The strain and electric-field effects on the electronic structure of MoTe₂/WTe₂ van der Waals heterostructures are investigated by first-principles calculations. The MoTe₂/WTe₂ heterostructures are indirect band gap semiconductors under different strains except for 2%. At a strain from  -6% to 6% under a zero electric field, the band gap is 0.56, 0.62, 0.69, 0.62, 0.46, 0.37 and 0.29 eV, respectively. Meanwhile, spin splitting at the conduction band minimum (CBM) decreases monotonically from 76-1 meV, and that at the valance band maximum (VBM) is 232, 266, 292, 307, 319, 302 and 283 meV. At an electric field from  -0.3 to 0.3 V Å^-1 under a 2% strain, VBM splitting decreases from 499-77 meV, but CBM splitting almost remains at 33 meV. A semiconductor-metal transition appears at an electric field of  -0.3 V Å^-1. At different electric fields under a  -4% strain, CBM splitting monotonically increases from 37-154 meV, but VBM splitting is 437, 438, 378, 273, 150, 78 and 134 meV, respectively. Our results can provide a more significant basis for spintronic and valleytronic devices.

Large and Anisotropic Linear Magnetoresistance in Single Crystals of Black Phosphorus Arising From Mobility Fluctuations

Black Phosphorus (BP) is presently attracting immense research interest on the global level due to its high mobility and suitable band gap for potential application in optoelectronics and flexible devices. It was theoretically predicted that BP has a large direction-dependent electrical and magnetotransport anisotropy. Investigations on magnetotransport of BP may therefore provide a new platform for studying the nature of electron transport in layered materials. However, to the best of our knowledge, magnetotransport studies, especially the anisotropic magnetoresistance (MR) effect in layered BP, are rarely reported. Here, we report a large linear MR up to 510% at a magnetic field of 7 Tesla in single crystals of BP. Analysis of the temperature and angle dependence of MR revealed that the large linear MR in our sample originates from mobility fluctuations. Furthermore, we reveal that the large linear MR of layered BP in fact follows a three-dimensional behavior rather than a two-dimensional one. Our results have implications to both the fundamental understanding and magnetoresistive device applications of BP.

Extremely large magnetoresistance in few-layer graphene/boron-nitride heterostructures

Understanding magnetoresistance, the change in electrical resistance under an external magnetic field, at the atomic level is of great interest both fundamentally and technologically. Graphene and other two-dimensional layered materials provide an unprecedented opportunity to explore magnetoresistance at its nascent stage of structural formation. Here we report an extremely large local magnetoresistance of∼2,000% at 400 K and a non-local magnetoresistance of >90,000% in an applied magnetic field of 9 T at 300 K in few-layer graphene/boron–nitride heterostructures. The local magnetoresistance is understood to arise from large differential transport parameters, such as the carrier mobility, across various layers of few-layer graphene upon a normal magnetic field, whereas the non-local magnetoresistance is due to the magnetic field induced Ettingshausen–Nernst effect. Non-local magnetoresistance suggests the possibility of a graphene-based gate tunable thermal switch. In addition, our results demonstrate that graphene heterostructures may be promising for magnetic field sensing applications.

Magnetoresistance, the change in electrical resistance of a material with its magnetic state, is an important phenomenon utilized in technological applications. Here, the authors report large local and non-local magnetoresistance effects in few-layer graphene/boron–nitride heterostructures at room temperature.

Anisotropic quantum transport in a network of vertically aligned graphene sheets

Novel anisotropic quantum transport was observed in a network of vertically aligned graphene sheets (VAGSs), which can be regarded as composed of plenty of quasi-parallel, nearly intrinsic, freestanding monolayers of graphene. When a magnetic field was perpendicular to most graphene sheets, magnetoresistance (MR) curves showed a weak localization (WL) effect at low field and a maximum value at a critical field ascribed to diffusive boundary scattering. While the magnetic field was parallel to the graphene sheets, the MR maximum disappeared and exhibited a transition from WL to weak antilocalization (WAL) with increasing temperature and magnetic field. Edges as atomically sharp defects are the main elastic and inelastic intervalley scattering sources, and inelastic scattering is ascribed to electron-electron intervalley scattering in the ballistic regime. This is the first time simultaneously observing WL, WAL and diffusive boundary scattering in such a macroscopic three-dimensional graphene system. These indicate the VAGS network is a robust platform for the study of the intrinsic physical properties of graphene.

Large linear magnetoresistance and Shubnikov-de Hass oscillations in single crystals of YPdBi Heusler topological insulators

We report the observation of a large linear magnetoresistance (MR) and Shubnikov-de Hass (SdH) quantum oscillations in single crystals of YPdBi Heusler topological insulators. Owning to the successfully obtained the high-quality YPdBi single crystals, large non-saturating linear MR of as high as 350% at 5K and over 120% at 300 K under a moderate magnetic field of 7 T is observed. In addition to the large, field-linear MR, the samples exhibit pronounced SdH quantum oscillations at low temperature. Analysis of the SdH data manifests that the high-mobility bulk electron carriers dominate the magnetotransport and are responsible for the observed large linear MR in YPdBi crystals. These findings imply that the Heusler-based topological insulators have superiorities for investigating the novel quantum transport properties and developing the potential applications.

Giant current-perpendicular-to-plane magnetoresistance in multilayer graphene as grown on nickel

Strong magnetoresistance effects are often observed in ferromagnet-nonmagnet multilayers, which are exploited in state-of-the-art magnetic field sensing and data storage technologies. In this work we report a novel current-perpendicular-to-plane magnetoresistance effect in multilayer graphene as grown on a catalytic nickel surface by chemical vapor deposition. A negative magnetoresistance effect of ∼10(4)% has been observed, which persists even at room temperature. This effect is correlated with the shape of the 2D peak as well as with the occurrence of D peak in the Raman spectrum of the as-grown multilayer graphene. The observed magnetoresistance is extremely high as compared to other known materials systems for similar temperature and field range and can be qualitatively explained within the framework of "interlayer magnetoresistance" (ILMR).

Resonant tunneling through discrete quantum states in stacked atomic-layered MoS2

Two-dimensional crystals can be assembled into three-dimensional stacks with atomic layer precision, which have already shown plenty of fascinating physical phenomena and been used for prototype vertical-field-effect-transistors.1,2 In this work, interlayer electron tunneling in stacked high-quality crystalline MoS2 films were investigated. A trilayered MoS2 film was sandwiched between top and bottom electrodes with an adjacent bottom gate, and the discrete energy levels in each layer could be tuned by bias and gate voltages. When the discrete energy levels aligned, a resonant tunneling peak appeared in the current-voltage characteristics. The peak position shifts linearly with perpendicular magnetic field, indicating formation of Landau levels. From this linear dependence, the effective mass and Fermi velocity are determined and are confirmed by electronic structure calculations. These fundamental parameters are useful for exploitation of its unique properties.

Vertical graphene spin valves based on La(2/3)Sr(1/3)MnO(3) electrodes

We report the fabrication of the La2/3Sr1/3MnO3 (LSMO)/graphene/Co sandwich structures employing single-layer graphene as the interlayer. Appreciable negative spin valve signals were observed from room temperature to 5 K. We find that the devices demonstrate nonlinear current-voltage (I-V) characteristics around room temperature, indicating that the tunneling effect is dominated rather than the Ohmic property. However, I-V curves exhibit evident linear behavior at low temperatures, which reveal the Ohmic characteristic. The vertical graphene spin valves using LSMO electrode have potential application in memory storage and logic operation.

Large networks of vertical multi-layer graphenes with morphology-tunable magnetoresistance

We report on the comparative study of magnetotransport properties of large-area vertical few-layer graphene networks with different morphologies, measured in a strong (up to 10 T) magnetic field over a wide temperature range. The petal-like and tree-like graphene networks grown by a plasma enhanced CVD process on a thin (500 nm) silicon oxide layer supported by a silicon wafer demonstrate a significant difference in the resistance-magnetic field dependencies at temperatures ranging from 2 to 200 K. This behaviour is explained in terms of the effect of electron scattering at ultra-long reactive edges and ultra-dense boundaries of the graphene nanowalls. Our results pave a way towards three-dimensional vertical graphene-based magnetoelectronic nanodevices with morphology-tuneable anisotropic magnetic properties.

Vertical graphene spin valve with Ohmic contacts

Evident spin valve signals are observed in Co/graphene/Co sandwich structures with both monolayer and two-layer graphene stacks at temperatures from 1.5 K to 300 K. All the devices demonstrate linear current-voltage curves, indicating that an Ohmic property is dominating rather than a tunneling effect. The vertical graphene spin valves have potential applications in high-density non-volatile memories.