High aspect ratio sub-15 nm silicon trenches from block copolymer templates

Directed Self-Assembly of Diamond Networks in Triblock Terpolymer Films on Patterned Substrates

Block copolymers (BCPs) are particularly effective in creating soft nanostructured templates for transferring complex 3D network structures into inorganic materials that are difficult to fabricate by other methods. However, achieving control of the local ordering within these 3D networks over large areas remains a significant obstacle to advancing material properties. Here, we address this challenge by directing the self-assembly of a 3D alternating diamond morphology by solvent vapor annealing of a triblock terpolymer film on a chemically patterned substrate. The hexagonal substrate patterns were designed to match a (111) plane of the diamond lattice. Commensurability between the sparse substrate pattern and the BCP lattice produced a uniformly ordered diamond network within the polymer film, as confirmed by a combination of atomic force microscopy and cross-sectional imaging using focused ion beam scanning electron microscopy. The successful replication of the complex and well-ordered 3D network structure in gold promises to advance optical metamaterials and has potential applications in nanophotonics.

High Aspect Ratio Nanoscale Pores through BCP-Based Metal Oxide Masks and Advanced Dry Etching

The reliable and regular modification of the surface properties of substrates plays a crucial role in material research and the development of functional surfaces. A key aspect of this is the development of the surface pores and topographies. These can confer specific advantages such as high surface area as well as specific functions such as hydrophobic properties. Here, we introduce a combination of nanoscale self-assembled block-copolymer-based metal oxide masks with optimized deep reactive ion etching (DRIE) of silicon to permit the fabrication of porous topographies with aspect ratios of up to 50. Following the evaluation of our procedure and involved parameters using various techniques, such as AFM or SEM, the suitability of our features for applications relying on high light absorption as well as efficient thermal management is explored and discussed in further detail.

Block Copolymer Self-Assembly Directed Synthesis of Porous Materials with Ordered Bicontinuous Structures and Their Potential Applications

Porous materials with their ordered bicontinuous structures have attracted great interest owing to ordered periodic structures as well as 3D interconnected network and pore channels. Bicontinuous structures may favor efficient mass diffusion to the interior of materials, thus increasing the utilization ratio of active sites. In addition, ordered bicontinuous structures confer materials with exceptional optical and magnetic properties, including tunable photonic bandgap, negative refraction, and multiple equivalent magnetization configurations. The attractive structural advantages and physical properties have inspired people to develop strategies for preparing bicontinuous-structured porous materials. Among a few synthetic approaches, the self-assembly of block copolymers represents a versatile strategy to prepare various bicontinuous-structured functional materials with pore sizes and lattice parameters ranging from 1 to 500 nm. This article overviews progress in this appealing area, with an emphasis on the synthetic strategies, the structural control (including topologies, pore sizes, and unit cell parameters), and their potential applications in energy storage and conversion, metamaterials, photonic crystals, cargo delivery and release, nanoreactors, and biomolecule selection.

The Bumpy Road to Stem Cell Therapies: Rational Design of Surface Topographies to Dictate Stem Cell Mechanotransduction and Fate

Cells sense and respond to a variety of physical cues from their surrounding microenvironment, and these are interpreted through mechanotransductive processes to inform their behavior. These mechanisms have particular relevance to stem cells, where control of stem cell proliferation, potency, and differentiation is key to their successful application in regenerative medicine. It is increasingly recognized that surface micro- and nanotopographies influence stem cell behavior and may represent a powerful tool with which to direct the morphology and fate of stem cells. Current progress toward this goal has been driven by combined advances in fabrication technologies and cell biology. Here, the capacity to generate precisely defined micro- and nanoscale topographies has facilitated the studies that provide knowledge of the mechanotransducive processes that govern the cellular response as well as knowledge of the specific features that can drive cells toward a defined differentiation outcome. However, the path forward is not fully defined, and the "bumpy road" that lays ahead must be crossed before the full potential of these approaches can be fully exploited. This review focuses on the challenges and opportunities in applying micro- and nanotopographies to dictate stem cell fate for regenerative medicine. Here, key techniques used to produce topographic features are reviewed, such as photolithography, block copolymer lithography, electron beam lithography, nanoimprint lithography, soft lithography, scanning probe lithography, colloidal lithography, electrospinning, and surface roughening, alongside their advantages and disadvantages. The biological impacts of surface topographies are then discussed, including the current understanding of the mechanotransductive mechanisms by which these cues are interpreted by the cells, as well as the specific effects of surface topographies on cell differentiation and fate. Finally, considerations in translating these technologies and their future prospects are evaluated.

Fabrication of Graphoepitaxial Gate-All-Around Si Circuitry Patterned Nanowire Arrays Using Block Copolymer Assisted Hard Mask Approach

We demonstrate the fabrication of sub-20 nm gate-all-around silicon (Si) nanowire field effect transistor structures using self-assembly. To create nanopatterned Si feature arrays, a block-copolymer-assisted hard mask approach was utilized using a topographically patterned substrate with well-defined Si₃N₄ features for graphoepitaxially alignment of the self-assembled patterns. Microphase-separated long-range ordered polystyrene-b-poly(ethylene oxide) (PS-b-PEO) block-copolymer-derived dot and line nanopatterns were achieved by a thermo-solvent approach within the substrate topographically defined channels of various widths and lengths. Solvent annealing parameters (temperature, annealing time, etc.) were varied to achieve the desired patterns. The BCP structures were modified by anhydrous ethanol to facilitate insertion of iron oxide features within the graphoepitaxial trenches that maintained the parent BCP arrangements. Vertical and horizontal ordered Si nanowire structures within trenches were fabricated using the iron oxide features as hard masks in an inductively coupled plasma (ICP) etch process. Cross-sectional micrographs depict wires of persistent width and flat sidewalls indicating the effectiveness of the mask. The aspect ratios could be varied by varying etch times. The sharp boundaries between the transistor components was also examined through the elemental mapping.

Probing morphology and chemistry in complex soft materials within situresonant soft x-ray scattering

Small angle scattering methodologies have been evolving at fast pace over the past few decades due to the ever-increasing demands for more details on the complex nanostructures of multiphase and multicomponent soft materials like polymer assemblies and biomaterials. Currently, element-specific and contrast variation techniques such as resonant (elastic) soft/tender x-ray scattering, anomalous small angle x-ray scattering, and contrast-matching small angle neutron scattering, or combinations of above are routinely used to extract the chemical composition and spatial arrangement of constituent elements at multiple length scales and examine electronic ordering phenomena. Here we present some recent advances in selectively characterizing structural architectures of complex soft materials, which often contain multi-components with a wide range of length scales and multiple functionalities, where novel resonant scattering approaches have been demonstrated to decipher a higher level of structural complexity that correlates to functionality. With the advancement of machine learning and artificial intelligence assisted correlative analysis, high-throughput and autonomous experiments would open a new paradigm of material research. Further development of resonant x-ray scattering instrumentation with crossplatform sample environments will enable multimodalin situ/operando characterization of the system dynamics with much improved spatial and temporal resolution.

Graphene-enabled block copolymer lithography transfer to arbitrary substrates

We describe a method for phase separating and transferring block copolymer (BCP) nanoscale patterns to arbitrary substrates for surface-independent nanolithography. The enabling technology is a hydrogenated or oxidized graphene thin film that only weakly adheres to its substrate. BCPs are applied to these graphene-based materials and solvent annealed to effect nanoscale phase separation. Then, taking advantage of the weak interaction of the graphene film and its substrate, the BCP/graphene stack is delaminated easily in water. A target substrate is then used to retrieve the stack, which can then serve as a lithographic mask. The use of water as a lift-off agent allows for chemically mild retrieval of the phase-separated BCP, extending the BCP lithography technique to essentially arbitrary substrates. We demonstrate this graphene-enabled BCP lithography on silicon nitride and polyethylene. We also show that using reduced graphene oxide (RGO) as a thin film enables the transfer of wafer-scale BCP films and lithography on SiOx and Si. We use an RGO support to produce phase-separated BCP solvent-annealed patterns on polystyrene, a result which is not possible using standard BCP solvent annealing and which shows the utility of this technique. Finally, we demonstrate the ability to create nanopatterns of higher complexity by stacking multiple BCP masks, a capability that is not possible using conventional BCP lithography. This technique may have applications in fabricating nanoporous membranes and photonically active coatings.

Feature size control using surface reconstruction temperature in block copolymer lithography for InAs nanowire growth

Here we present a method to control the size of the openings in hexagonally organized BCP thin films of poly(styrene)-block-poly(4-vinylpyridine) (PS-b-P4VP) by using surface reconstruction. The surface reconstruction is based on selective swelling of the P4VP block in ethanol, and its extraction to the surface of the film, resulting in pores upon drying. We found that the BCP pore diameter increases with ethanol immersion temperature. In our case, the temperature range 18 to 60 °C allowed fine-tuning of the pore size between 14 and 22 nm. A conclusion is that even though the molecular weight of the respective polymer blocks is fixed, the PS-b-P4VP pore diameter can be tuned by controlling temperature during surface reconstruction. These results can be used for BCP-based nanofabrication in general, and for vertical nanowire growth in particular, where high pattern density and diameter control are of importance. Finally, we demonstrate successful growth of indium arsenide InAs vertical nanowires by selective-area metal-organic vapor phase epitaxy (MOVPE), using a silicon nitride mask patterned by the proposed PS-b-P4VP surface reconstruction lithography method.

Spatial arrangement of block copolymer nanopatterns using a photoactive homopolymer substrate

Spatial control of the orientation of block copolymers (BCPs) in thin films offers enormous opportunities for practical nanolithography applications. In this study, we demonstrate the use of a substrate comprised of poly(4-acetoxystyrene) to spatially control interfacial interactions and block copolymer orientation over different length scales. Upon UV irradiation poly(4-acetoxystyrene) undergoes a photo-Fries rearrangement yielding phenolic groups available for further functionalization. The wetting behaviour of PS-b-PMMA deposited on the poly(4-acetoxystyrene) films could be precisely controlled through controlling the UV irradiation dose. After exposure, and a mild post-exposure treatment, the substrate switches from asymmetric, to neutral and then to symmetric wetting. Upon exposure through photomasks, a range of high fidelity micro-patterns consisting of perpendicularly oriented lamellar microdomains were generated. Furthermore, the resolution of chemically patterned poly(4-acetoxystyrene) substrate could be further narrowed to submicrometer scale using electron beam lithography. When the BCP was annealed on an e-beam modified poly(4-acetoxystyrene) surface, the interface between domains of parallel and perpendicular orientation of the BCPs was well defined, especially when compared with the substrates patterned using the photomask.

5 nm Ordered Structures Self-Assembled by C2 -Symmetric Hybrids with Polyhedral Oligomeric Silsesquioxane and Hexa-peri-Hexabenzocoronene

Hybrids consisting of polyhedral oligomeric silsesquioxane (POSS) and hexa-peri-hexabenzocoronene (HBC) with a dumbbell topology and C₂ symmetry were designed and synthesized. They self-assemble into 5 nm ordered structures. In particular, the increased steric effect with increasing POSS units stabilizes a square columnar phase (Col_squ ) which is important in nanotemplating. These hybrids containing discotic liquid crystal HBC and POSS units have an excellent etching contrast and present an approach to obtain 5 nm nanopatterns.

Contrasting Chemistry of Block Copolymer Films Controls the Dynamics of Protein Self-Assembly at the Nanoscale

Biological systems are able to control the assembly and positioning of proteins with nanoscale precision, as exemplified by the intricate molecular structures within cell membranes, virus capsids, and collagen matrices. Controlling the assembly of biomolecules is critical for the use of biomaterials in artificial systems such as antibacterial coatings, engineered tissue samples, and implanted medical devices. Furthermore, understanding the dynamics of protein assembly on heterogeneous templates will ultimately enable the control of protein crystallization in general. Here, we show a biomimetic, hierarchical bottom-up approach to direct the self-assembly of crystalline S-layers through nonspecific interactions with nanostructured block copolymer (BCP) thin-film templates. A comparison between physically and chemically patterned BCP substrates shows that chemical heterogeneity is required to confine the adhesion and self-assembly of S-layers to specific BCP domains. Furthermore, we show that this mechanism can be extended to direct the formation of collagen fibers along the principal direction of the underlying BCP substrate. The dynamics of protein self-assembly at the solid-liquid interface are followed using in situ high-resolution atomic force microscopy under continuous flow conditions, allowing the determination of the rate constants of the self-assembly. A pattern of alternating, chemically distinct nanoscale domains drastically increases the rate of self-assembly compared to non-patterned chemically homogeneous substrates.

Guided Assembly of Block Copolymers in Three-Dimensional Woodpile Scaffolds

Three-dimensional (3D) nanofabrication using the directed self-assembly of block copolymers (BCPs) holds great promise for the nanoscale device fabrication and integration into 3D architectures over large areas with high element densities. In this work, a robust platform is developed for building 3D BCP architectures with tailored functionality using 3D micron-scale woodpile structures (WPSs), fabricated by a multiphoton polymerization technique. By completely filling the spaces of the WPSs and using the interactions of the blocks of the BCPs with the struts of the WPS, well-developed 3D nanoscopic morphologies are produced. Metal ion complexation with one block of the copolymer affords a convenient stain to highlight one of the microdomains of the copolymer for electron microscopy studies but also, with the reduction of the complexing salt to the corresponding metal, a simple strategy is shown to produce 3D constructs with nanoscopic domain resolution.

All-Metal Broadband Optical Absorbers Based on Block Copolymer Nanolithography

The growing interest in solar energy during recent years has spurred on the development of high-efficiency optical absorbers using emerging concepts in plasmonics and metamaterials. Most absorber designs require patterning on a subwavelength scale, making large-scale fabrication expensive or impractical. This study presents an all-metal metasurface with tightly packed, sub-80 nm nanodomes fabricated by template-stripping thin gold films from reusable silicon templates. Subwavelength patterning was achieved via molecular self-assembly of block copolymers, which enables large-area, periodic patterning with nanometer precision. The proposed nanodome surface acts as an optical absorber capable of absorbing 97% of incident light in the visible range 320-650 nm, and still more than 90% at high incidence angles. We demonstrate both experimentally and theoretically that the absorption behavior of the thin film can be controlled by changing the size of the nanodomes, namely, the gap between the structures. The enhanced absorption of light is attributed to localized particle plasmon and gap plasmon resonances. This research provides a straightforward and cost-effective strategy to design and fabricate thin, large-area, light-absorbing coatings that can be transferred onto nearly any rigid or flexible substrate. The all-metal metasurfaces are a promising candidate for plasmon-induced hot electron generation for efficient solar energy conversion in photovoltaic and photocatalytic devices.

Atomic layer deposition for spacer defined double patterning of sub-10 nm titanium dioxide features

The next generation of hard disk drive technology for data storage densities beyond 5 Tb/in² will require single-bit patterning of features with sub-10 nm dimensions by nanoimprint lithography. To address this challenge master templates are fabricated using pattern multiplication with atomic layer deposition (ALD). Sub-10 nm lithography requires a solid understanding of materials and their interactions. In this work we study two important oxide materials, silicon dioxide and titanium dioxide, as the pattern spacer and look at their interactions with carbon, chromium and silicon dioxide. We found that thermal titanium dioxide ALD allows for the conformal deposition of a spacer layer without damaging the carbon mandrel and eliminates the surface modification due to the reactivity of the metal-organic precursor. Finally, using self-assembled block copolymer lithography and thermal titanium dioxide spacer fabrication, we demonstrate pattern doubling with 7.5 nm half-pitch spacer features.

Fabrication of Polymer Microstructures of Various Angles via Synchrotron X-Ray Lithography Using Simple Dimensional Transformation

In this paper, we developed a method of fabricating polymer microstructures at various angles on a single substrate via synchrotron X-ray lithography coupled with simple dimensional transformations. Earlier efforts to create various three-dimensional (3D) features on flat substrates focused on the exposure technology, material properties, and light sources. A few research groups have sought to create microstructures on curved substrates. We created tilted microstructures of various angles by simply deforming the substrate from 3D to two-dimensional (2D). The microstructural inclination angles changed depending on the angles of the support at particular positions. We used convex, concave, and S-shaped supports to fabricate microstructures with high aspect ratios (1:11) and high inclination angles (to 79°). The method is simple and can be extended to various 3D microstructural applications; for example, the fabrication of microarrays for optical components, and tilted micro/nanochannels for biological applications.

Thin Films with Perpendicular Tetragonally Packed Rectangular Rods Obtained from Blends of Linear ABC Block Terpolymers

A binary blend of poly(isoprene-block-styrene-block-(2-vinylpyridine)) (ISP) triblock terpolymers, having the same chain length but different compositions, was used to achieve an ordered lattice with 4-fold symmetry of rectangular-shaped rods of poly(isoprene) (I) and poly(2-vinylpyridine) (P). In given conditions, the I and P domains were oriented perpendicularly to the substrate, providing an appealing type of templates for nanopatterning. Thin films were prepared by spin coating, exposed to solvent vapor (providing morphological reorganization), and then characterized by atomic force microscopy, transmission electron microscopy, and grazing-incidence small-angle X-ray scattering. Selective I and P identifications were carried out by AFM and TEM on a model ISP, as well as development of a technique of electronic contrast enhancement to better assign the self-assembly structure in GISAXS.

Bioinspired smart asymmetric nanochannel membranes

Bioinspired smart asymmetric nanochannel membranes (BSANM) have been explored extensively to achieve the delicate ionic transport functions comparable to those of living organisms. The abiotic system exhibits superior stability and robustness, allowing for promising applications in many fields. In view of the abundance of research concerning BSANM in the past decade, herein, we present a systematic overview of the development of the state-of-the-art BSANM system. The discussion is focused on the construction methodologies based on raw materials with diverse dimensions (i.e. 0D, 1D, 2D, and bulk). A generic strategy for the design and construction of the BSANM system is proposed first and put into context with recent developments from homogeneous to heterogeneous nanochannel membranes. Then, the basic properties of the BSANM are introduced including selectivity, gating, and rectification, which are associated with the particular chemical and physical structures. Moreover, we summarized the practical applications of BSANM in energy conversion, biochemical sensing and other areas. In the end, some personal opinions on the future development of the BSANM are briefly illustrated. This review covers most of the related literature reported since 2010 and is intended to build up a broad and deep knowledge base that can provide a solid information source for the scientific community.

Influence of block copolymer feature size on reactive ion etching pattern transfer into silicon

A successful realisation of sub-20 nm features on silicon (Si) is becoming the focus of many technological studies, strongly influencing the future performance of modern integrated circuits. Although reactive ion etching (RIE), at both micrometric and nanometric scale has already been the target of many studies, a better understanding of the different mechanisms involved at sub-20 nm size etching is still required. In this work, we investigated the influence of the feature size on the etch rate of Si, performed by a cryogenic RIE process through cylinder-forming polystyrene-block-polymethylmethacrylate (PS-b-PMMA) diblock copolymer (DBC) masks with diameter ranging between 19-13 nm. A sensible decrease of the etch depth and etch rate was observed in the mask with the smallest feature size. For all the DBCs under investigation, we determined the process window useful for the correct transfer of the nanometric cylindrical pattern into a Si substrate. A structural and physicochemical investigation of the resulting nanostructured Si is reported in order to delineate the influence of various RIE pattern effects. Feature-size-dependent etch, or RIE-lag, is proved to significantly affect the obtained results.

Complex High-Aspect-Ratio Metal Nanostructures by Secondary Sputtering Combined with Block Copolymer Self-Assembly

High-resolution (10 nm), high-areal density, high-aspect ratio (>5), and morphologically complex nanopatterns are fabricated from a single conventional block copolymer (BCP) structure with a 70 nm scale resolution and an aspect ratio of 1, through the secondary-sputtering phenomenon during the Ar-ion-bombardment process. This approach provides a foundation for the design of new routes to BCP lithography.

Patterning at the 10 nanometer length scale using a strongly segregating block copolymer thin film and vapor phase infiltration of inorganic precursors

In this work, we demonstrate the use of self-assembled thin films of the cylinder-forming block copolymer poly(4-tert-butylstyrene-block-2-vinylpyridine) to pattern high density features at the 10 nm length scale. This material's large interaction parameter facilitates pattern formation in single-digit nanometer dimensions. This block copolymer's accessible order-disorder transition temperature allows thermal annealing to drive the assembly of ordered 2-vinylpyridine cylinders that can be selectively complexed with the organometallic precursor trimethylaluminum. This unique chemistry converts organic 2-vinylpyridine cylinders into alumina nanowires with diameters ranging from 8 to 11 nm, depending on the copolymer molecular weight. Graphoepitaxy of this block copolymer aligns and registers sub-12 nm diameter nanowires to larger-scale rectangular, curved, and circular features patterned by optical lithography. The alumina nanowires function as a robust hard mask to withstand the conditions required for patterning the underlying silicon by plasma etching. We conclude with a discussion of some of the challenges that arise with using block copolymers for patterning at sub-10 nm feature sizes.

Multilayer block copolymer meshes by orthogonal self-assembly

Continued scaling-down of lithographic-pattern feature sizes has brought templated self-assembly of block copolymers (BCPs) into the forefront of nanofabrication research. Technologies now exist that facilitate significant control over otherwise unorganized assembly of BCP microdomains to form both long-range and locally complex monolayer patterns. In contrast, the extension of this control into multilayers or 3D structures of BCP microdomains remains limited, despite the possible technological applications in next-generation devices. Here, we develop and analyse an orthogonal self-assembly method in which multiple layers of distinct-molecular-weight BCPs naturally produce nanomesh structures of cylindrical microdomains without requiring layer-by-layer alignment or high-resolution lithographic templating. The mechanisms for orthogonal self-assembly are investigated with both experiment and simulation, and we determine that the control over height and chemical preference of templates are critical process parameters. The method is employed to produce nanomeshes with the shapes of circles and Y-intersections, and is extended to produce three layers of orthogonally oriented cylinders.

CMOS-Compatible Top-Down Fabrication of Periodic SiO2 Nanostructures using a Single Mask

We propose a CMOS-compatible top-down fabrication technique of highly-ordered and periodic SiO2 nanostructures using a single amorphous silicon (α-Si) mask layer. The α-Si mask pattern is precisely transferred into the underlying SiO2 substrate material with a high fidelity by a novel top-down fabrication. It is the first time for α-Si film used as an etch mask to fabricate SiO2 nanostructures including nanoline, nanotrench, and nanohole arrays. It is observed that the α-Si mask can significantly reduce the pattern edge roughness and achieve highly uniform and smooth sidewalls. This behavior may be attributed to the presence of high concentration of dangling bonds in α-Si mask surface. By controlling the process condition, it is possible to achieve a desired vertical etched profile with a controlled size. Our results demonstrate that SiO2 pattern as small as sub-20 nm may be achievable. The obtained SiO2 pattern can be further used as a nanotemplate to produce periodic or more complex silicon nanostructures. Moreover, this novel top-down approach is a potentially universal method that is fully compatible with the currently existing Si-based CMOS technologies. It offers a greater flexibility for the fabrication of various nanoscale devices in a simple and efficient way.

Performance Enhancement of Electronic and Energy Devices via Block Copolymer Self-Assembly

The use of self-assembled block copolymers (BCPs) for the fabrication of electronic and energy devices has received a tremendous amount of attention as a non-traditional approach to patterning integrated circuit elements at nanometer dimensions and densities inaccessible to traditional lithography techniques. The exquisite control over the dimensional features of the self-assembled nanostructures (i.e., shape, size, and periodicity) is one of the most attractive properties of BCP self-assembly. Harmonic spatial arrangement of the self-assembled nanoelements at desired positions on the chip may offer a new strategy for the fabrication of electronic and energy devices. Several recent reports show the great promise in using BCP self-assembly for practical applications of electronic and energy devices, leading to substantial enhancements of the device performance. Recent progress is summarized here, with regard to the performance enhancements of non-volatile memory, electrical sensor, and energy devices enabled by directed BCP self-assembly.

Widely Tunable Morphologies in Block Copolymer Thin Films Through Solvent Vapor Annealing Using Mixtures of Selective Solvents

Thin films of block copolymers are extremely attractive for nanofabrication because of their ability to form uniform and periodic nanoscale structures by microphase separation. One shortcoming of this approach is that to date the design of a desired equilibrium structure requires synthesis of a block copolymer de novo within the corresponding volume ratio of the blocks. In this work, we investigated solvent vapor annealing in supported thin films of poly(2-hydroxyethyl methacrylate)-block-poly(methyl methacrylate) [PHEMA-b-PMMA] by means of grazing incidence small angle X-ray scattering (GISAXS). A spin-coated thin film of lamellar block copolymer was solvent vapor annealed to induce microphase separation and improve the long-range order of the self-assembled pattern. Annealing in a mixture of solvent vapors using a controlled volume ratio of solvents (methanol, MeOH, and tetrahydrofuran, THF), which are chosen to be preferential for each block, enabled selective formation of ordered lamellae, gyroid, hexagonal or spherical morphologies from a single block copolymer with a fixed volume fraction. The selected microstructure was then kinetically trapped in the dry film by rapid drying. To our knowledge, this paper describes the first reported case where in-situ methods are used to study the transition of block copolymer films from one initial disordered morphology to four different ordered morphologies, covering much of the theoretical diblock copolymer phase diagram.

Aligned silicon nanofins via the directed self-assembly of PS-b-P4VP block copolymer and metal oxide enhanced pattern transfer

'Directing' block copolymer (BCP) patterns is a possible option for future semiconductor device patterning, but pattern transfer of BCP masks is somewhat hindered by the inherently low etch contrast between blocks. Here, we demonstrate a 'fab' friendly methodology for forming well-registered and aligned silicon (Si) nanofins following pattern transfer of robust metal oxide nanowire masks through the directed self-assembly (DSA) of BCPs. A cylindrical forming poly(styrene)-block-poly(4-vinyl-pyridine) (PS-b-P4VP) BCP was employed producing 'fingerprint' line patterns over macroscopic areas following solvent vapor annealing treatment. The directed assembly of PS-b-P4VP line patterns was enabled by electron-beam lithographically defined hydrogen silsequioxane (HSQ) gratings. We developed metal oxide nanowire features using PS-b-P4VP structures which facilitated high quality pattern transfer to the underlying Si substrate. This work highlights the precision at which long range ordered ∼10 nm Si nanofin features with 32 nm pitch can be defined using a cylindrical BCP system for nanolithography application. The results show promise for future nanocircuitry fabrication to access sub-16 nm critical dimensions using cylindrical systems as surface interfaces are easier to tailor than lamellar systems. Additionally, the work helps to demonstrate the extension of these methods to a 'high χ' BCP beyond the size limitations of the more well-studied PS-b-poly(methyl methylacrylate) (PS-b-PMMA) system.

Nanoscale plasmonic stamp lithography on silicon

Nanoscale lithography on silicon is of interest for applications ranging from computer chip design to tissue interfacing. Block copolymer-based self-assembly, also called directed self-assembly (DSA) within the semiconductor industry, can produce a variety of complex nanopatterns on silicon, but these polymeric films typically require transformation into functional materials. Here we demonstrate how gold nanopatterns, produced via block copolymer self-assembly, can be incorporated into an optically transparent flexible PDMS stamp, termed a plasmonic stamp, and used to directly functionalize silicon surfaces on a sub-100 nm scale. We propose that the high intensity electric fields that result from the localized surface plasmons of the gold nanoparticles in the plasmonic stamps upon illumination with low intensity green light, lead to generation of electron-hole pairs in the silicon that drive spatially localized hydrosilylation. This approach demonstrates how localized surface plasmons can be used to enable functionalization of technologically relevant surfaces with nanoscale control.

Solvent vapor annealing of block copolymers in confined topographies: commensurability considerations for nanolithography

The directed self-assembly of block copolymer (BCP) materials in topographically patterned substrates (i.e., graphoepitaxy) is a potential methodology for the continued scaling of nanoelectronic device technologies. In this Communication, an unusual feature size variation in BCP nanodomains under confinement with graphoepitaxially aligned cylinder-forming poly(styrene)-block-poly(4-vinylpyridine) (PS-b-P4VP) BCP is reported. Graphoepitaxy of PS-b-P4VP BCP line patterns (CII ) is accomplished via topo-graphy in hydrogen silsequioxane (HSQ) modified substrates and solvent vapor annealing (SVA). Interestingly, reduced domain sizes in features close to the HSQ guiding features are observed. The feature size reduction is evident after inclusion of alumina into the P4VP domains followed by pattern transfer to the silicon substrate. It is suggested that this nano-domain size perturbation is due to solvent swelling effects during SVA. It is proposed that using a commensurability value close to the solvent vapor annealed periodicity will alleviate this issue leading to uniform nanofins.

Fabrication of sub-20 nm nano-gap structures through the elastomeric nano-stamp assisted secondary sputtering phenomenon

We describe a highly efficient method for fabricating controllable and reliable sub-20 nm scale nano-gap structures through an elastomeric nano-stamp with an embedded ultra-thin pattern. The stamp consists of ultrahigh resolution (approximately 10 nm) and high aspect ratio (ca. 15) metal nano-structures, which are obtained by secondary sputtering lithography (SSL). The nano-gap structures fabricated in this fashion achieve a high resolution and meet the requirements of minimal cost, high reliability, controllability, reproducibility, and applicability to different materials. Further, we demonstrate that this method enables the fabrication of SERS substrates for detection at the single-molecule level.

Fabrication of ordered, large scale, horizontally-aligned si nanowire arrays based on an in situ hard mask block copolymer approach

A simple technique is demonstrated to fabricate horizontal, uniform, and hexagonally arranged Sinanowire arrays with controlled orientation and density at spatially well defined locations on a substrate based on an in situ hard-mask pattern-formation approach by microphase-separated block-copolymer thin films. The technique may have significant application in the manufacture of transistor circuitry.

Metal-containing block copolymer thin films yield wire grid polarizers with high aspect ratio

Highly selective etch masks are formed by thin films of a polystyrene-b-poly(ferrocenylisopropylmethylsilane) diblock copolymer, PS-PFiPMS, containing hemicylindrical domains of PFiPMS. These domains, with a period of 35 nm, are readily aligned through mechanical shear. Aligned PS-PFiPMS templates are employed to fabricate high-aspect-ratio nanowire grids from amorphous silicon, which can polarize deep ultraviolet radiation, including 193 nm, at >90% efficiency.

Electrical biomolecule detection using nanopatterned silicon via block copolymer lithography

An electrical biosensor exploiting a nanostructured semiconductor is a promising technology for the highly sensitive, label-free detection of biomolecules via a straightforward electronic signal. The facile and scalable production of a nanopatterned electrical silicon biosensor by block copolymer (BCP) nano-lithography is reported. A cost-effective and large-area nanofabrication, based on BCP self-assembly and single-step dry etching, is developed for the hexagonal nanohole patterning of thin silicon films. The resultant nanopatterned electrical channel modified with biotin molecules successfully detects the two proteins, streptavidin and avidin, down to nanoscale molarities (≈1 nm). The nanoscale pattern comparable to the Debye screening length and the large surface area of the three-dimensional silicon nanochannel enable excellent sensitivity and stability. A device simulation confirms that the nanopatterned structure used in this work is effective for biomolecule detection. This approach relying on the scalable self-assembly principle offers a high-throughput manufacturing process for clinical lab-on-a-chip diagnoses and relevant biomolecular studies.

An in situ grazing incidence X-ray scattering study of block copolymer thin films during solvent vapor annealing

In situ grazing-incidence small-angle X-ray scattering experiments on thin films of block copolymers during annealing in neutral solvent vapors are reported. By removing the solvent in a controlled manner, the period of the microphase separated morphology is found to increase with increasing block copolymer concentration in a power law manner with an exponent ∼ 2/3. By venting the systems at different rates during the solvent removal process, kinetically arresting the system, the period of the microphase separated morphology in the dried film can be varied.

On the self-assembly of brush block copolymers in thin films

We describe a simple route to fabricate two dimensionally well-ordered, periodic nanopatterns using the self-assembly of brush block copolymers (brush BCPs). Well-developed lamellar microdomains oriented perpendicular to the substrate are achieved, without modification of the underlying substrates, and structures with feature sizes greater than 200 nm are generated due to the reduced degree of chain entanglements of brush BCPs. A near-perfect linear scaling law was found for the period, L, as a function of backbone degree of polymerization (DP) for two series of brush BCPs. The exponent increases slightly from 0.99 to 1.03 as the side chain molecular weight increases from ∼2.4 to ∼4.5 kg/mol(-1) and saturated with further increase in the side chain molecular weight due to the entropic penalty associated with the packing of the side chains. Porous templates and scaffolds from brush BCP thin films are also obtained by selective etching of one component.

HipGISAXS: a high-performance computing code for simulating grazing-incidence X-ray scattering data

This article describes the development of a flexible grazing-incidence small-angle X-ray scattering (GISAXS) simulation code in the framework of the distorted wave Born approximation that effectively utilizes the parallel processing power provided by graphics processors and multicore processors. The code, entitledHigh-Performance GISAXS, computes the GISAXS image for any given superposition of user-defined custom shapes or morphologies in a material and for various grazing-incidence angles and sample orientations. These capabilities permit treatment of a wide range of possible sample structures, including multilayered polymer films and nanoparticles on top of or embedded in a substrate or polymer film layers. In cases where the material displays regions of significant refractive index contrast, an algorithm has been implemented to perform a slicing of the sample and compute the averaged refractive index profile to be used as the reference geometry of the unperturbed system. A number of case studies are presented, which demonstrate good agreement with the experimental data for a variety of polymer and hybrid polymer/nanoparticle composite materials. The parallelized simulation code is well suited for addressing the analysis efforts required by the increasing amounts of GISAXS data being produced by high-speed detectors and ultrafast light sources.

Pattern transfer using block copolymers

To meet the increasing demand for patterning smaller feature sizes, a lithography technique is required with the ability to pattern sub-20 nm features. While top-down photolithography is approaching its limit in the continued drive to meet Moore's law, the use of directed self-assembly (DSA) of block copolymers (BCPs) offers a promising route to meet this challenge in achieving nanometre feature sizes. Recent developments in BCP lithography and in the DSA of BCPs are reviewed. While tremendous advances have been made in this field, there are still hurdles that need to be overcome to realize the full potential of BCPs and their actual use.

Size and space controlled hexagonal arrays of superparamagnetic iron oxide nanodots: magnetic studies and application

Highly dense hexagonally arranged iron oxide nanodots array were fabricated using PS-b-PEO self-assembled patterns. The copolymer molecular weight, composition and choice of annealing solvent/s allows dimensional and structural control of the nanopatterns at large scale. A mechanism is proposed to create scaffolds through degradation and/or modification of cylindrical domains. A methodology based on selective metal ion inclusion and subsequent processing was used to create iron oxide nanodots array. The nanodots have uniform size and shape and their placement mimics the original self-assembled nanopatterns. For the first time these precisely defined and size selective systems of ordered nanodots allow careful investigation of magnetic properties in dimensions from 50 nm to 10 nm, which delineate the nanodots are superparamagnetic, well-isolated and size monodispersed. This diameter/spacing controlled iron oxide nanodots systems were demonstrated as a resistant mask over silicon to fabricate densely packed, identical ordered, high aspect ratio silicon nanopillars and nanowire features.

Large-scale roll-to-roll fabrication of vertically oriented block copolymer thin films

Large-scale roll-to-roll (R2R) fabrication of vertically oriented nanostructures via directed self-assembly of cylindrical block copolymer (c-BCP) thin films is reported. Nearly 100% vertical orientation of cylinders in sub-100 nm c-BCP films under optimized processing via a dynamic sharp temperature gradient field termed Cold Zone Annealing-Sharp or 'CZA-S' is achieved, with successful scale-up on a prototype custom-built 70 ft × 1 ft R2R platform moving at 25 μm/s, with 9 consecutive CZA units. Static thermal annealing of identical films in a conventional vacuum oven fails to produce comparable results. As a potential for applications, we fabricate high-density silicon oxide nanodot arrays from the CZA-S annealed BCP thin film template.