Two-stage metal-catalyst-free growth of high-quality polycrystalline graphene films on silicon nitride substrates

Multispecies-coadsorption-induced rapid preparation of graphene glass fiber fabric and applications in flexible pressure sensor

Direct chemical vapor deposition (CVD) growth of graphene on dielectric/insulating materials is a promising strategy for subsequent transfer-free applications of graphene. However, graphene growth on noncatalytic substrates is faced with thorny issues, especially the limited growth rate, which severely hinders mass production and practical applications. Herein, graphene glass fiber fabric (GGFF) is developed by graphene CVD growth on glass fiber fabric. Dichloromethane is applied as a carbon precursor to accelerate graphene growth, which has a low decomposition energy barrier, and more importantly, the produced high-electronegativity Cl radical can enhance adsorption of active carbon species by Cl-CH2 coadsorption and facilitate H detachment from graphene edges. Consequently, the growth rate is increased by ~3 orders of magnitude and carbon utilization by ~960-fold, compared with conventional methane precursor. The advantageous hierarchical conductive configuration of lightweight, flexible GGFF makes it an ultrasensitive pressure sensor for human motion and physiological monitoring, such as pulse and vocal signals.

Discovery of Graphene Growth Alloy Catalysts Using High-Throughput Machine Learning

Despite today's commercial-scale graphene production using chemical vapor deposition (CVD), the growth of high-quality single-layer graphene with controlled morphology and crystallinity remains challenging. Considerable effort is still spent on designing improved CVD catalysts for producing high-quality graphene. Conventionally, however, catalyst design has been pursued using empirical intuition or trial-and-error approaches. Here, we combine high-throughput density functional theory and machine learning to identify new prospective transition metal alloy catalysts that exhibit performance comparable to that of established graphene catalysts, such as Ni(111) and Cu(111). The alloys identified through this process generally consist of combinations of early- and late-transition metals, and a majority are alloys of Ni or Cu. Nevertheless, in many cases, these conventional catalyst metals are combined with unconventional partners, such as Zr, Hf, and Nb. The approach presented here therefore highlights an important new approach for identifying novel catalyst materials for the CVD growth of low-dimensional nanomaterials.

Transfer-Free Quasi-Suspended Graphene Grown on a Si Wafer

The direct growth of graphene affording wafer-scale uniformity on insulators is paramount to electronic and optoelectronic applications; however, it remains a challenge to date, because it entails an entirely different growth mode than that over metals. Herein, the metal-catalyst-free growth of quasi-suspended graphene on a Si wafer is demonstrated using an interface-decoupling chemical vapor deposition strategy. The employment of lower-than-conventional H₂ dosage and concurrent introduction of methanol during growth can effectively weaken the interaction between the synthesized graphene and the underlying substrate. The growth mode can be thus fine-tuned, producing a predominantly monolayer graphene film with wafer-level homogeneity. Graphene thus grown on a 4 inch Si wafer enables the transfer-free fabrication of high-performance graphene-based field-effect transistor arrays that exhibit almost no shift in the charge neutral point, indicating a quasi-suspended feature of the graphene. Moreover, a carrier mobility up to 15 000 cm² V^-1 s^-1 can be attained. This study is anticipated to offer meaningful insights into the synthesis of wafer-scale high-quality graphene on dielectrics for practical graphene devices.

In-Situ Growth of Graphene Films to Improve Sensing Performances

Graphene films made by chemical vapor deposition (CVD) are a popular method to modify sensors by virtue of large-scale and reproducibility, but suffer from various surface contamination and structural defects induced during transfer procedures. In-situ growth of graphene films is proposed in this review article to improve sensing performance. Root causes of the surface contamination and structural defects are revealed with several common transfer methods. In-situ approaches are introduced and compared, growing graphene films with clean surfaces and few defects. This allows graphene film to display superior sensing performance for sensor applications. This work may reasonably be expected to offer a good avenue for synthesis of graphene films applicable for sensing applications.

Copper acetate-facilitated transfer-free growth of high-quality graphene for hydrovoltaic generators

Direct synthesis of high-quality graphene on dielectric substrates without a transfer process is of vital importance for a variety of applications. Current strategies for boosting high-quality graphene growth, such as remote metal catalyzation, are limited by poor performance with respect to the release of metal catalysts and hence suffer from a problem with metal residues. Herein, we report an effective approach that utilizes a metal-containing species, copper acetate, to continuously supply copper clusters in a gaseous form to aid transfer-free growth of graphene over a wafer scale. The thus-derived graphene films were found to show reduced multilayer density and improved electrical performance and exhibited a carrier mobility of 8500 cm2 V-1 s-1. Furthermore, droplet-based hydrovoltaic electricity generator devices based on directly grown graphene were found to exhibit robust voltage output and long cyclic stability, in stark contrast to their counterparts based on transferred graphene, demonstrating the potential for emerging energy harvesting applications. The work presented here offers a promising solution to organize the metal catalytic booster toward transfer-free synthesis of high-quality graphene and enable smart energy generation.

Preparation of a Vertical Graphene-Based Pressure Sensor Using PECVD at a Low Temperature

Flexible pressure sensors have received much attention due to their widespread potential applications in electronic skins, health monitoring, and human-machine interfaces. Graphene and its derivatives hold great promise for two-dimensional sensing materials, owing to their superior properties, such as atomically thin, transparent, and flexible structure. The high performance of most graphene-based pressure piezoresistive sensors relies excessively on the preparation of complex, post-growth transfer processes. However, the majority of dielectric substrates cannot hold in high temperatures, which can induce contamination and structural defects. Herein, a credibility strategy is reported for directly growing high-quality vertical graphene (VG) on a flexible and stretchable mica paper dielectric substrate with individual interdigital electrodes in plasma-enhanced chemical vapor deposition (PECVD), which assists in inducing electric field, resulting in a flexible, touchable pressure sensor with low power consumption and portability. Benefitting from its vertically directed graphene microstructure, the graphene-based sensor shows superior properties of high sensitivity (4.84 KPa^-1) and a maximum pressure range of 120 KPa, as well as strong stability (5000 cycles), which makes it possible to detect small pulse pressure and provide options for preparation of pressure sensors in the future.

Label-Free Mycotoxin Raman Identification by High-Performing Plasmonic Vertical Carbon Nanostructures

Mycotoxins are widespread chemical entities in the agriculture and food industries that can induce cancer growth and immune deficiency, posing a serious health threat for humankind. These hazardous compounds are produced naturally by various molds (fungi) that contaminate different food products and can be detected in cereals, nuts, spices, and other food products. However, their detection, especially at minimally harmful concentrations, remains a serious analytical challenge. This research shows that high-performing plasmonic substrates (analytical enhancement factor = 5 × 10⁷ ) based on plasma-grown vertical hollow carbon nanotubes can be applied for immediate detection of the most toxic mycotoxins. Due to excellent sensitivity allowing operation at ppb concentrations, it is possible to collect vibrational fingerprints of aflatoxin B₁ , zearalenone, alternariol, and fumonisin B₁ , highlighting the key spectral differences between them using principal component analysis. Regarding time-consuming conventional methods, including thin-layer chromatography, gas chromatography, high-performance liquid chromatography, and enzyme-linked immunosorbent assay, the designed surface-enhanced Raman spectroscopy substrates provide a clear roadmap to reducing the detection time-scale of mycotoxins down to seconds.

The Mechanism of Graphene Vapor-Solid Growth on Insulating Substrates

Wafer-scale single-crystal graphene film directly grown on insulating substrates via the chemical vapor deposition (CVD) method is desired for building high-performance graphene-based devices. In comparison with the well-studied mechanism of graphene growth on transition metal substrates, the lack of understanding on the mechanism of graphene growth on insulating surfaces greatly hinders the progress. Here, by using first-principles calculation, we systematically explored the absorption of various carbon species CH_x (x = 0, 1, 2, 3, 4) on three typical insulating substrates [h-BN, sapphire, and quartz] and reveal that graphene growth on an insulating surface is dominated by the reaction of active carbon species with the hydrogen-passivated graphene edges and thus is less sensitive to the type of the substrate. The dominating gas phase precursor, CH₃, plays two key roles in graphene CVD growth on an insulating substrate: (i) to feed the graphene growth and (ii) to remove excessive hydrogen atoms from the edge of graphene. The threshold reaction barriers for the growth of graphene armchair (AC) and zigzag (ZZ) edges were calculated as 3.00 and 1.94 eV, respectively; thus the ZZ edge grows faster than the AC one. Our theory successfully explained why the circumference of a graphene island grown on insulating substrates is generally dominated by AC edges, which is a long-standing puzzle of graphene growth. In addition, the very slow graphene growth rate on an insulating substrate is calculated and agrees well with existing experimental observations. The comprehensive insights on the graphene growth on insulating surfaces at the atomic scale provide guidance on the experimental design for high-quality graphene growth on insulating substrates.

Laser Patterning a Graphene Layer on a Ceramic Substrate for Sensor Applications

This paper describes a method for patterning the graphene layer and gold electrodes on a ceramic substrate using a Nd:YAG nanosecond fiber laser. The technique enables the processing of both layers and trimming of the sensor parameters. The main aim was to develop a technique for the effective and efficient shaping of both the sensory layer and the metallic electrodes. The laser shaping method is characterized by high speed and very good shape mapping, regardless of the complexity of the processing. Importantly, the technique enables the simultaneous shaping of both the graphene layer and Au electrodes in a direct process that does not require a complex and expensive masking process, and without damaging the ceramic substrate. Our results confirmed the effectiveness of the developed laser technology for shaping a graphene layer and Au electrodes. The ceramic substrate can be used in the construction of various types of sensors operating in a wide temperature range, especially the cryogenic range.

H2 O-Etchant-Promoted Synthesis of High-Quality Graphene on Glass and Its Application in See-Through Thermochromic Displays

Direct growth of graphene on glass can bring an innovative revolution by coupling the complementary properties of traditional glass and modern graphene (such as transparency and conductivity), offering brand new daily-life related applications. However, preparation of high-quality graphene on nonmetallic glass is still challenging. Herein, the direct route of low sheet resistance graphene on glass is reported by using in situ-introduced water as a mild etchant and methane as a carbon precursor via chemical vapor deposition. The derived graphene features with large domain sizes and few amorphous carbon impurities. Intriguingly, the sheet resistance of graphene on glass is dramatically lowered down to ≈1170 Ω sq^-1 at the optical transmittance ≈93%, ≈20% of that derived without the water etchant. Based on the highly conductive and optical transparent graphene on glass, a see-through thermochromic display is thus fabricated with transparent graphene glass as a heater. This work can motivate further investigations of the direct synthesis of high-quality graphene on functional glass and its versatile applications in transparent electronic devices or displays.

Ultrafast Catalyst-Free Graphene Growth on Glass Assisted by Local Fluorine Supply

High-quality graphene film grown on dielectric substrates by a direct chemical vapor deposition (CVD) method promotes the application of high-performance graphene-based devices in large scale. However, due to the noncatalytic feature of insulating substrates, the production of graphene film on them always has a low growth rate and is time-consuming (typically hours to days), which restricts real potential applications. Here, by employing a local-fluorine-supply method, we have pushed the massive fabrication of a graphene film on a wafer-scale insulating substrate to a short time of just 5 min without involving any metal catalyst. The highly enhanced domain growth rate (∼37 nm min^-1) and the quick nucleation rate (∼1200 nuclei min^-1 cm^-2) both account for this high productivity of graphene film. Further first-principles calculation demonstrates that the released fluorine from the fluoride substrate at high temperature can rapidly react with CH₄ to form a more active carbon feedstock, CH₃F, and the presence of CH₃F molecules in the gas phase much lowers the barrier of carbon attachment, providing sufficient carbon feedstock for graphene CVD growth. Our approach presents a potential route to accomplish exceptionally large-scale and high-quality graphene films on insulating substrates, i.e., SiO₂, SiO₂/Si, fiber, etc., at low cost for industry-level applications.

Primary Nucleation-Dominated Chemical Vapor Deposition Growth for Uniform Graphene Monolayers on Dielectric Substrate

Direct chemical vapor deposition growth of high quality graphene on dielectric substrates holds great promise for practical applications in electronics and optoelectronics. However, graphene growth on dielectrics always suffers from the issues of inhomogeneity and/or poor quality. Here, we first reveal that a novel precursor-modification strategy can successfully suppress the secondary nucleation of graphene to evolve ultrauniform graphene monolayer film on dielectric substrates. A mechanistic study indicates that the hydroxylation of silica substrate weakens the binding between graphene edges and substrate, thus realizing the primary nucleation-dominated growth. Field-effect transistors based on the graphene films show exceptional electrical performance with the charge carrier mobility up to 3800 cm² V^-1 s^-1 in air, which is much higher than those reported results of graphene films grown on dielectrics.

Metal-Catalyst-Free Growth of Patterned Graphene on SiO2 Substrates by Annealing Plasma-Induced Cross-Linked Parylene for Optoelectronic Device Applications

A metal-catalyst-free method for the direct growth of patterned graphene on an insulating substrate is reported in this paper. Parylene N is used as the carbon source. The surface molecule layer of parylene N is cross-linked by argon plasma bombardment. Under high-temperature annealing, the cross-linking layer of parylene N is graphitized into nanocrystalline graphene, which is a process that transforms organic to inorganic and insulation to conduction, while the parylene N molecules below the cross-linking layer decompose and vaporize at high temperature. Using this technique, the direct growth of a graphene film in a large area and with good uniformity is achieved. The thickness of the graphene is determined by the thickness of the cross-linking layer. Patterned graphene films can be obtained directly by controlling the patterns of the cross-linking region (lithography-free patterning). Graphene-silicon Schottky junction photodetectors are fabricated using the as-grown graphene. The Schottky junction shows good performance. The application of direct-grown graphene in optoelectronics is achieved with a great improvement of the device fabrication efficiency compared with transferred graphene. When illuminated with a 792 nm laser, the responsivity and specific detectivity of the detector measured at room temperature are 275.9 mA/W and 4.93 × 10⁹ cm Hz^1/2/W, respectively.

Direct Growth of Graphene on Insulator Using Liquid Precursor Via an Intermediate Nanostructured State Carbon Nanotube

Synthesis of high-quality graphene layers on insulating substrates is highly desirable for future graphene-based high-speed electronics. Besides the use of gaseous hydrocarbon sources, solid and liquid hydrocarbon sources have recently shown great promises for high-quality graphene growth. Here, I report chemical vapor deposition growth of mono- to few-layer graphene directly on SiO₂ substrate using ethanol as liquid hydrocarbon feedstock. The growth process of graphene has been systematically investigated as a function of annealing temperature as well as different seed layers. Interestingly, it was found that the carbon atoms produced by thermal decomposition of ethanol form sp² carbon network on SiO₂ surface thereby forming nanographene flakes via an intermediate carbon-based nanostructured state carbon nanotube. This work might pave the way to an understanding for economical and catalyst-free graphene growth compatible with current silicon-processing techniques, and it can be applied on a variety of insulating surfaces including quartz, sapphire, and fused silica.

Controllable Growth of Graphene on Liquid Surfaces

Controllable fabrication of graphene is necessary for its practical application. Chemical vapor deposition (CVD) approaches based on solid metal substrates with morphology-rich surfaces, such as copper (Cu) and nickel (Ni), suffer from the drawbacks of inhomogeneous nucleation and uncontrollable carbon precipitation. Liquid substrates offer a quasiatomically smooth surface, which enables the growth of uniform graphene layers. The fast surface diffusion rates also lead to unique growth and etching kinetics for achieving graphene grains with novel morphologies. The rheological surface endows the graphene grains with self-adjusted rotation, alignment, and movement that are driven by specific interactions. The intermediary-free transfer or the direct growth of graphene on insulated substrates is demonstrated using liquid metals. Here, the controllable growth process of graphene on a liquid surface to promote the development of attractive liquid CVD strategies is in focus. The exciting progress in controlled growth, etching, self-assembly, and delivery of graphene on a liquid surface is presented and discussed in depth. In addition, prospects and further developments in these exciting fields of graphene growth on a liquid surface are discussed.

Direct CVD Growth of Graphene on Technologically Important Dielectric and Semiconducting Substrates

To fabricate graphene based electronic and optoelectronic devices, it is highly desirable to develop a variety of metal-catalyst free chemical vapor deposition (CVD) techniques for direct synthesis of graphene on dielectric and semiconducting substrates. This will help to avoid metallic impurities, high costs, time consuming processes, and defect-inducing graphene transfer processes. Direct CVD growth of graphene on dielectric substrates is usually difficult to accomplish due to their low surface energy. However, a low-temperature plasma enhanced CVD technique could help to solve this problem. Here, the recent progress of metal-catalyst free direct CVD growth of graphene on technologically important dielectric (SiO2, ZrO2, HfO2, h-BN, Al2O3, Si3N4, quartz, MgO, SrTiO3, TiO2, etc.) and semiconducting (Si, Ge, GaN, and SiC) substrates is reviewed. High and low temperature direct CVD growth of graphene on these substrates including growth mechanism and morphology is discussed. Detailed discussions are also presented for Si and Ge substrates, which are necessary for next generation graphene/Si/Ge based hybrid electronic devices. Finally, the technology development of the metal-catalyst free direct CVD growth of graphene on these substrates is concluded, with future outlooks.

Oriented Carbon Nanostructures by Plasma Processing: Recent Advances and Future Challenges

Carbon, one of the most abundant materials, is very attractive for many applications because it exists in a variety of forms based on dimensions, such as zero-dimensional (0D), one-dimensional (1D), two-dimensional (2D), and-three dimensional (3D). Carbon nanowall (CNW) is a vertically-oriented 2D form of a graphene-like structure with open boundaries, sharp edges, nonstacking morphology, large interlayer spacing, and a huge surface area. Plasma-enhanced chemical vapor deposition (PECVD) is widely used for the large-scale synthesis and functionalization of carbon nanowalls (CNWs) with different types of plasma activation. Plasma-enhanced techniques open up possibilities to improve the structure and morphology of CNWs by controlling the plasma discharge parameters. Plasma-assisted surface treatment on CNWs improves their stability against structural degradation and surface chemistry with enhanced electrical and chemical properties. These advantages broaden the applications of CNWs in electrochemical energy storage devices, catalysis, and electronic devices and sensing devices to extremely thin black body coatings. However, the controlled growth of CNWs for specific applications remains a challenge. In these aspects, this review discusses the growth of CNWs using different plasma activation, the influence of various plasma-discharge parameters, and plasma-assisted surface treatment techniques for tailoring the properties of CNWs. The challenges and possibilities of CNW-related research are also discussed.

Bridging the Gap between Reality and Ideal in Chemical Vapor Deposition Growth of Graphene

Graphene, in its ideal form, is a two-dimensional (2D) material consisting of a single layer of carbon atoms arranged in a hexagonal lattice. The richness in morphological, physical, mechanical, and optical properties of ideal graphene has stimulated enormous scientific and industrial interest, since its first exfoliation in 2004. In turn, the production of graphene in a reliable, controllable, and scalable manner has become significantly important to bring us closer to practical applications of graphene. To this end, chemical vapor deposition (CVD) offers tantalizing opportunities for the synthesis of large-area, uniform, and high-quality graphene films. However, quite different from the ideal 2D structure of graphene, in reality, the currently available CVD-grown graphene films are still suffering from intrinsic defective grain boundaries, surface contaminations, and wrinkles, together with low growth rate and the requirement of inevitable transfer. Clearly, a gap still exits between the reality of CVD-derived graphene, especially in industrial production, and ideal graphene with outstanding properties. This Review will emphasize the recent advances and strategies in CVD production of graphene for settling these issues to bridge the giant gap. We begin with brief background information about the synthesis of nanoscale carbon allotropes, followed by the discussion of fundamental growth mechanism and kinetics of CVD growth of graphene. We then discuss the strategies for perfecting the quality of CVD-derived graphene with regard to domain size, cleanness, flatness, growth rate, scalability, and direct growth of graphene on functional substrate. Finally, a perspective on future development in the research relevant to scalable growth of high-quality graphene is presented.

Intergrain Diffusion of Carbon Radical for Wafer-Scale, Direct Growth of Graphene on Silicon-Based Dielectrics

Graphene intrinsically hosts charge-carriers with ultrahigh mobility and possesses a high quantum capacitance, which are attractive attributes for nanoelectronic applications requiring graphene-on-substrate base architecture. Most of the current techniques for graphene production rely on the growth on metal catalyst surfaces, followed by a contamination-prone transfer process to put graphene on a desired dielectric substrate. Therefore, a direct graphene deposition process on dielectric surfaces is crucial to avoid polymer-adsorption-related contamination from the transfer process. Here, we present a chemical-diffusion mechanism of a process for transfer-free growth of graphene on silicon-based gate-dielectric substrates via low-pressure chemical vapor deposition. The process relies on the diffusion of catalytically produced carbon radicals through polycrystalline copper (Cu) grain boundaries and their crystallization at the interface of Cu and underneath silicon-based gate-dielectric substrates. The graphene produced exhibits low-defect multilayer domains ( L_a ∼ 140 nm) with turbostratic orientations as revealed by selected area electron diffraction. Further, graphene growth between Cu and the substrate was 2-fold faster on SiO₂/Si(111) substrate than on SiO₂/Si(100). The process parameters such as growth temperature and gas compositions (hydrogen (H₂)/methane (CH₄) flow rate ratio) play critical roles in the formation of high-quality graphene films. The low-temperature back-gating charge transport measurements of the interfacial graphene show density-independent mobility for holes and electrons. Consequently, the analysis of electronic transport at various temperatures reveals a dominant Coulombic scattering, a thermal activation energy (2.0 ± 0.2 meV), and two-dimensional hopping conduction in the graphene field-effect transistor. A band overlapping energy of 2.3 ± 0.4 meV is estimated by employing the simple two-band model.

Direct synthesis of graphene on silicon oxide by low temperature plasma enhanced chemical vapor deposition

Direct graphene growth on silicon with a native oxide using plasma enhanced chemical vapour deposition at low temperatures [550 °C-650 °C] is demonstrated for the first time. It is shown that the fine-tuning of a two-step synthesis with gas mixtures C2H2/H2 yields monolayer and few layer graphene films with a controllable domain size from 50 nm to more than 300 nm and the sheet resistance ranging from 8 kΩ sq-1 to less than 1.8 kΩ sq-1. Differences are understood in terms of the interaction of the plasma species - chiefly atomic H - with the deposited graphene and the native oxide layer. The proposed low temperature direct synthesis on an insulating substrate does not require any transfer processes and improves the compatibility with the current industrial processes.

Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition

The metal-free synthesis of graphene on single-crystal silicon substrates, the most common commercial semiconductor, is of paramount significance for many technological applications. In this work, we report the growth of graphene directly on an upside-down placed, single-crystal silicon substrate using metal-free, ambient-pressure chemical vapor deposition. By controlling the growth temperature, in-plane propagation, edge-propagation, and core-propagation, the process of graphene growth on silicon can be identified. This process produces atomically flat monolayer or bilayer graphene domains, concave bilayer graphene domains, and bulging few-layer graphene domains. This work would be a significant step toward the synthesis of large-area and layer-controlled, high-quality graphene on single-crystal silicon substrates.

Space irradiation-induced damage to graphene films

Graphene with impressive electrical, optical, chemical and mechanical properties has promising potential applications for photoelectric devices and mechanical components installed on the space facilities, which will probably face hostile environments including high-energy particulate irradiation. Here we explored the effect of simulated space irradiation on the structure and properties of large-area single-layer and multi-layer graphene films (about four layers) including atomic oxygen (AO), electron (EL) and proton (PR). AO with strong oxidizing capacity reacts with carbon atoms of graphene films and generates carbon dioxide, high-energy PR leads to polymorphic atomic defects in graphene through collision and excitation effects. Miraculously, EL irradiation causes little damage to the graphene films because of the excellent conductivity. Graphene ripples are broken by irradiation and adapt their shape or structure with respect to the substrate via thermodynamic stability, which causes the change of the physical and mechanical properties of graphene.

Germanium-Assisted Direct Growth of Graphene on Arbitrary Dielectric Substrates for Heating Devices

Direct growth of graphene on dielectric substrates is a prerequisite to the development of graphene-based electronic and optoelectronic devices. However, the current graphene synthesis methods on dielectric substrates always involve a metal contamination problem, and the direct production of graphene patterns still remains unattainable and challenging. Herein, a semiconducting, germanium (Ge)-assisted, chemical vapor deposition approach is proposed to produce monolayer graphene directly on arbitrary dielectric substrates. By the prepatterning of a catalytic Ge layer, the graphene with desired pattern can be achieved conveniently and readily. Due to the catalysis of Ge, monolayer graphene is able to form on Ge-covered dielectric substrates including SiO₂ /Si, quartz glass, and sapphire substrates. Optimization of the process parameters leads to complete sublimation of the catalytic Ge layer during or immediately after formation of the monolayer graphene, enabling direct deposition of large-area and continuous graphene on dielectric substrates. The large-area, highly conductive graphene synthesized on a transparent dielectric substrate using the proposed approach has exhibited a wide range of applications, including in both defogger and thermochromic displays, as already successfully demonstrated here.

Controlled Chemical Synthesis in CVD Graphene

Due to the unique properties of graphene, single layer, bilayer or even few layer graphene peeled off from bulk graphite cannot meet the need of practical applications. Large size graphene with quality comparable to mechanically exfoliated graphene has been synthesized by chemical vapor deposition (CVD). The main development and the key issues in controllable chemical vapor deposition of graphene has been briefly discussed in this chapter. Various strategies for graphene layer number and stacking control, large size single crystal graphene domains on copper, graphene direct growth on dielectric substrates, and doping of graphene have been demonstrated. The methods summarized here will provide guidance on how to synthesize other two-dimensional materials beyond graphene.

Low Temperature Metal Free Growth of Graphene on Insulating Substrates by Plasma Assisted Chemical Vapor Deposition

Direct growth of graphene films on dielectric substrates (quartz and silica) is reported, by means of remote electron cyclotron resonance plasma assisted chemical vapor deposition r-(ECR-CVD) at low temperature (650°C). Using a two step deposition process- nucleation and growth- by changing the partial pressure of the gas precursors at constant temperature, mostly monolayer continuous films, with grain sizes up to 500 nm are grown, exhibiting transmittance larger than 92% and sheet resistance as low as 900 Ω·sq^-1. The grain size and nucleation density of the resulting graphene sheets can be controlled varying the deposition time and pressure. In additon, first-principles DFT-based calculations have been carried out in order to rationalize the oxygen reduction in the quartz surface experimentally observed. This method is easily scalable and avoids damaging and expensive transfer steps of graphene films, improving compatibility with current fabrication technologies.

Self-Terminating Confinement Approach for Large-Area Uniform Monolayer Graphene Directly over Si/SiOx by Chemical Vapor Deposition

To synthesize graphene by chemical vapor deposition (CVD) both in large area and with uniform layer number directly over Si/SiO_x has proven challenging. The use of catalytically active metal substrates, in particular Cu, has shown far greater success and therefore is popular. That said, for electronics applications it requires a transfer procedure, which tends to damage and contaminate the graphene. Thus, the direct fabrication of uniform graphene on Si/SiO_x remains attractive. Here we show a facile confinement CVD approach in which we simply "sandwich" two Si wafers with their oxide faces in contact to form uniform monolayer graphene. A thorough examination of the material reveals it comprises faceted grains despite initially nucleating as round islands. Upon clustering, they facet to minimize their energy. This behavior leads to faceting in polygons, as the system aims to ideally form hexagons, the lowest energy form, much like the hexagonal cells in a beehive, which requires the minimum wax. This process also leads to a near minimal total grain boundary length per unit area. This fact, along with the high graphene quality, is reflected in its electrical performance, which is highly comparable with graphene formed over other substrates, including Cu. In addition, the graphene growth is self-terminating. Our CVD approach is easily scalable and will make graphene formation directly on Si wafers competitive against that from metal substrates, which suffer from transfer. Moreover, this CVD route should be applicable for the direct synthesis of other 2D materials and their van der Waals heterostructures.

Fast Growth and Broad Applications of 25-Inch Uniform Graphene Glass

A unique ethanol-precursor-based LPCVD route is developed for the fast (4 min, improved 20 times) and scalable (25 inch, improved six times) growth of high-quality graphene glass. The obtained graphene glass presents high uniformity across large areas and is demonstrated to be an excellent material for constructing switchable windows and biosensor devices, owing to its excellent transparency and conductivity.

Controllable Synthesis of Graphene by Plasma-Enhanced Chemical Vapor Deposition and Its Related Applications

Graphene and its derivatives hold a great promise for widespread applications such as field-effect transistors, photovoltaic devices, supercapacitors, and sensors due to excellent properties as well as its atomically thin, transparent, and flexible structure. In order to realize the practical applications, graphene needs to be synthesized in a low-cost, scalable, and controllable manner. Plasma-enhanced chemical vapor deposition (PECVD) is a low-temperature, controllable, and catalyst-free synthesis method suitable for graphene growth and has recently received more attentions. This review summarizes recent advances in the PECVD growth of graphene on different substrates, discusses the growth mechanism and its related applications. Furthermore, the challenges and future development in this field are also discussed.

Seed-Assisted Growth of Single-Crystalline Patterned Graphene Domains on Hexagonal Boron Nitride by Chemical Vapor Deposition

Vertical heterostructures based on two-dimensional layered materials, such as stacked graphene and hexagonal boron nitride (G/h-BN), have stimulated wide interest in fundamental physics, material sciences and nanoelectronics. To date, it still remains challenging to obtain high quality G/h-BN heterostructures concurrently with controlled nucleation density and thickness uniformity. In this work, with the aid of the well-defined poly(methyl methacrylate) seeds, effective control over the nucleation densities and locations of graphene domains on the predeposited h-BN monolayers was realized, leading to the formation of patterned G/h-BN arrays or continuous films. Detailed spectroscopic and morphological characterizations further confirmed that ∼85.7% of such monolayer graphene domains were of single-crystalline nature with their domain sizes predetermined throughout seed interspacing. Density functional theory calculations suggested that a self-terminated growth mechanism can be applied for the related graphene growth on h-BN/Cu. In turn, as-constructed field-effect transistor arrays based on such synthesized single-crystalline G/h-BN patterning were found to be compatible with fabricating devices with nice and steady performance, hence holding great promise for the development of next-generation graphene-based electronics.

Direct Growth of Graphene Films on 3D Grating Structural Quartz Substrates for High-Performance Pressure-Sensitive Sensors

Conformal graphene films have directly been synthesized on the surface of grating microstructured quartz substrates by a simple chemical vapor deposition process. The wonderful conformality and relatively high quality of the as-prepared graphene on the three-dimensional substrate have been verified by scanning electron microscopy and Raman spectra. This conformal graphene film possesses excellent electrical and optical properties with a sheet resistance of <2000 Ω·sq(-1) and a transmittance of >80% (at 550 nm), which can be attached with a flat graphene film on a poly(dimethylsiloxane) substrate, and then could work as a pressure-sensitive sensor. This device possesses a high-pressure sensitivity of -6.524 kPa(-1) in a low-pressure range of 0-200 Pa. Meanwhile, this pressure-sensitive sensor exhibits super-reliability (≥5000 cycles) and an ultrafast response time (≤4 ms). Owing to these features, this pressure-sensitive sensor based on 3D conformal graphene is adequately introduced to test wind pressure, expressing higher accuracy and a lower background noise level than a market anemometer.

Direct CVD Graphene Growth on Semiconductors and Dielectrics for Transfer-Free Device Fabrication

Graphene is the most broadly discussed and studied two-dimensional material because of its preeminent physical, mechanical, optical, and thermal properties. Until now, metal-catalyzed chemical vapor deposition (CVD) has been widely employed for the scalable production of high-quality graphene. However, in order to incorporate the graphene into electronic devices, a transfer process from metal substrates to targeted substrates is inevitable. This process usually results in contamination, wrinkling, and breakage of graphene samples - undesirable in graphene-based technology and not compatible with industrial production. Therefore, direct graphene growth on desired semiconductor and dielectric substrates is considered as an effective alternative. Over the past years, there have been intensive investigations to realize direct graphene growth using CVD methods without the catalytic role of metals. Owing to the low catalytic activity of non-metal substrates for carbon precursor decomposition and graphene growth, several strategies have been designed to facilitate and engineer graphene fabrication on semiconductors and insulators. Here, those developed strategies for direct CVD graphene growth on semiconductors and dielectrics for transfer-free fabrication of electronic devices are reviewed. By employing these methods, various graphene-related structures can be directly prepared on desired substrates and exhibit excellent performance, providing versatile routes for varied graphene-based materials fabrication.

Approaching Defect-free Amorphous Silicon Nitride by Plasma-assisted Atomic Beam Deposition for High Performance Gate Dielectric

In the past few decades, gate insulators with a high dielectric constant (high-k dielectric) enabling a physically thick but dielectrically thin insulating layer, have been used to replace traditional SiO_x insulator and to ensure continuous downscaling of Si-based transistor technology. However, due to the non-silicon derivative natures of the high-k metal oxides, transport properties in these dielectrics are still limited by various structural defects on the hetero-interfaces and inside the dielectrics. Here, we show that another insulating silicon compound, amorphous silicon nitride (a-Si₃N₄), is a promising candidate of effective electrical insulator for use as a high-k dielectric. We have examined a-Si₃N₄ deposited using the plasma-assisted atomic beam deposition (PA-ABD) technique in an ultra-high vacuum (UHV) environment and demonstrated the absence of defect-related luminescence; it was also found that the electronic structure across the a-Si₃N₄/Si heterojunction approaches the intrinsic limit, which exhibits large band gap energy and valence band offset. We demonstrate that charge transport properties in the metal/a-Si₃N₄/Si (MNS) structures approach defect-free limits with a large breakdown field and a low leakage current. Using PA-ABD, our results suggest a general strategy to markedly improve the performance of gate dielectric using a nearly defect-free insulator.

One-Minute Room-Temperature Transfer-Free Production of Mono- and Few-Layer Polycrystalline Graphene on Various Substrates

Graphene deposited on various substrates has attracted the attention of the scientific and technical communities for use in a wide range of applications. Graphene on substrates is commonly produced by two types of methods, namely, methods that require a transfer step and transfer-free methods. Compared with methods that require a transfer step, transfer-free methods have a simpler procedure and a lower cost. Thus, transfer-free methods have considerable potential to meet the industrial and commercial demands of production methods. However, some limitations of the current transfer-free methods must be overcome, such as the high temperatures encountered during production, the relatively long manufacturing times, incompatibilities for both rigid and flexible substrates, and an inability to extend the process to other two-dimensional (2-D) atomic crystals. In this work, a room-temperature rubbing method is developed for the rapid transfer-free production of defect-free polycrystalline graphene on rigid and flexible substrates. Starting with inexpensive commercially obtained graphite powder, mono- and few-layer graphene can be fabricated directly on various substrates, with an average production time of less than one minute (from raw graphite to graphene on the substrate). Importantly, this method can be extended to other 2-D atomic crystals.

Direct preparation of high quality graphene on dielectric substrates

Recent advances in the field of the direct growth of graphene on dielectric substrates are described.

Growing Uniform Graphene Disks and Films on Molten Glass for Heating Devices and Cell Culture

The direct growth of uniform graphene disks and their continuous film is achieved by exploiting the molten state of glass. The use of molten glass enables highly uniform nucleation and an enhanced growth rate (tenfold) of graphene, as compared to those scenarios on commonly used insulating solids. The obtained graphene glasses show promising application potentials in daily-life scenarios such as smart heating devices and biocompatible cell-culture mediums.

Direct Chemical Vapor Deposition-Derived Graphene Glasses Targeting Wide Ranged Applications

Direct growth of graphene on traditional glasses is of great importance for various daily life applications. We report herein the catalyst-free atmospheric-pressure chemical vapor deposition approach to directly synthesizing large-area, uniform graphene films on solid glasses. The optical transparency and sheet resistance of such kinds of graphene glasses can be readily adjusted together with the experimentally tunable layer thickness of graphene. More significantly, these graphene glasses find a broad range of real applications by enabling the low-cost construction of heating devices, transparent electrodes, photocatalytic plates, and smart windows. With a practical scalability, the present work will stimulate various applications of transparent, electrically and thermally conductive graphene glasses in real-life scenarios.

Graphene single crystals: size and morphology engineering

Recently developed chemical vapor deposition (CVD) is considered as an effective way to large-area and high-quality graphene preparation due to its ultra-low cost, high controllability, and high scalability. However, CVD-grown graphene film is polycrystalline, and composed of numerous grains separated by grain boundaries, which are detrimental to graphene-based electronics. Intensive investigations have been inspired on the controlled growth of graphene single crystals with the absence of intrinsic defects. As the two most concerned parameters, the size and morphology serve critical roles in affecting properties and understanding the growth mechanism of graphene crystals. Therefore, a precise tuning of the size and morphology will be of great significance in scale-up graphene production and wide applications. Here, recent advances in the synthesis of graphene single crystals on both metals and dielectric substrates by the CVD method are discussed. The review mainly covers the size and morphology engineering of graphene single crystals. Furthermore, recent progress in the growth mechanism and device applications of graphene single crystals are presented. Finally, the opportunities and challenges are discussed.

Electronically transparent graphene replicas of diatoms: a new technique for the investigation of frustule morphology

The morphogenesis of the silica cell walls (called frustules) of unicellular algae known as diatoms is one of the most intriguing mysteries of the diatoms. To study frustule morphogenesis, optical, electron and atomic force microscopy has been extensively used to reveal the frustule morphology. However, since silica frustules are opaque, past observations were limited to outer and fracture surfaces, restricting observations of interior structures. Here we show that opaque silica frustules can be converted into electronically transparent graphene replicas, fabricated using chemical vapor deposition of methane. Chemical vapor deposition creates a continuous graphene coating preserving the frustule's shape and fine, complicated internal features. Subsequent dissolution of the silica with hydrofluoric acid yields a free-standing replica of the internal and external native frustule morphologies. Electron microscopy renders these graphene replicas highly transparent, revealing previously unobserved, complex, three-dimensional, interior frustule structures, which lend new insights into the investigation of frustule morphogenesis.

Graphene-based macroscopic assemblies and architectures: an emerging material system

Due to the outstanding physicochemical properties arising from its truly two-dimensional (2D) planar structure with a single-atom thickness, graphene exhibits great potential for use in sensors, catalysts, electrodes, and in biological applications, etc. With further developments in the theoretical understanding and assembly techniques, graphene should enable great changes both in scientific research and practical industrial applications. By the look of development, it is of fundamental and practical significance to translate the novel physical and chemical properties of individual graphene nanosheets into the macroscale by the assembly of graphene building blocks into macroscopic architectures with structural specialities and functional novelties. The combined features of a 2D planar structure and abundant functional groups of graphene oxide (GO) should provide great possibilities for the assembly of GO nanosheets into macroscopic architectures with different macroscaled shapes through various assembly techniques under different bonding interactions. Moreover, macroscopic graphene frameworks can be used as ideal scaffolds for the incorporation of functional materials to offset the shortage of pure graphene in the specific desired functionality. The advantages of light weight, supra-flexibility, large surface area, tough mechanical strength, and high electrical conductivity guarantee graphene-based architectures wide application fields. This critical review mainly addresses recent advances in the design and fabrication of graphene-based macroscopic assemblies and architectures and their potential applications. Herein, we first provide overviews of the functional macroscopic graphene materials from three aspects, i.e., 1D graphene fibers/ribbons, 2D graphene films/papers, 3D network-structured graphene monoliths, and their composite counterparts with either polymers or nano-objects. Then, we present the promising potential applications of graphene-based macroscopic assemblies in the fields of electronic and optoelectronic devices, sensors, electrochemical energy devices, and in water treatment. Last, the personal conclusions and perspectives for this intriguing field are given.

Catalytic transparency of hexagonal boron nitride on copper for chemical vapor deposition growth of large-area and high-quality graphene

Graphene transferred onto h-BN has recently become a focus of research because of its excellent compatibility with large-area device applications. The requirements of scalability and clean fabrication, however, have not yet been satisfactorily addressed. The successful synthesis of graphene/h-BN on a Cu foil and DFT calculations for this system are reported, which demonstrate that a thin h-BN film on Cu foil is an excellent template for the growth of large-area and high-quality graphene. Such material can be grown on thin h-BN films that are less than 3 nm thick, as confirmed by optical microscopy and Raman spectroscopy. We have evaluated the catalytic growth mechanism and the limits on the CVD growth of high-quality and large-area graphene on h-BN film/Cu by performing Kelvin probe force microscopy and DFT calculations for various thicknesses of h-BN.

Direct growth of high-quality graphene on high-κ dielectric SrTiO₃ substrates

High-quality monolayer graphene was synthesized on high-κ dielectric single crystal SrTiO3 (STO) substrates by a facile metal-catalyst-free chemical vapor deposition process. The as-grown graphene sample was suitable for fabricating a high performance field-effect transistor (FET), followed by a far lower operation voltage compared to that of a SiO2-gated FET and carrier motilities of approximately 870-1050 cm(2)·V(-1)·s(-1) in air at rt. The directly grown high-quality graphene on STO makes it a perfect candidate for designing transfer-free, energy-saving, and batch production of FET arrays.

Direct integration of polycrystalline graphene into light emitting diodes by plasma-assisted metal-catalyst-free synthesis

The integration of graphene into devices is a challenging task because the preparation of a graphene-based device usually includes graphene growth on a metal surface at elevated temperatures (∼1000 °C) and a complicated postgrowth transfer process of graphene from the metal catalyst. Here we report a direct integration approach for incorporating polycrystalline graphene into light emitting diodes (LEDs) at low temperature by plasma-assisted metal-catalyst-free synthesis. Thermal degradation of the active layer in LEDs is negligible at our growth temperature, and LEDs could be fabricated without a transfer process. Moreover, in situ ohmic contact formation is observed between DG and p-GaN resulting from carbon diffusion into the p-GaN surface during the growth process. As a result, the contact resistance is reduced and the electrical properties of directly integrated LEDs outperform those of LEDs with transferred graphene electrodes. This relatively simple method of graphene integration will be easily adoptable in the industrialization of graphene-based devices.

Near-equilibrium chemical vapor deposition of high-quality single-crystal graphene directly on various dielectric substrates

By using near-equilibrium chemical vapor deposition, it is demonstrated that high-quality single-crystal graphene can be grown on dielectric substrates. The maximum size is about 11 μm. The carrier mobility can reach about 5650 cm(2) V(-1) s(-1) , which is comparable to those of some metal-catalyzed graphene crystals, reflecting the good quality of the graphene lattice.