Tellurium thin films in hybrid organic electronics: morphology and mobility

One-step synthesis of high-quality homogenous Te/Se alloy nanorods with various morphologies

A convenient method was developed for controllable synthesis of homogeneous trigonal Te/Se alloy nanorods (t-Te/Se ANRs) with diverse morphologies, aspect ratios and compositions at room temperature in aqueous solution.

Effects of pulsing and interfacial potentials on tellurium-organic heterostructured films

Polycrystalline thin films of tellurium and organic semiconductor molecules are paired in heterostructured field-effect transistors built on Si/SiO2 substrates. While charge carrier mobilities can exceed 1 cm(2)/(V s), there is only a limited gate voltage range over which the current is modulated. We employ continuous and pulsed measurements on transistors to explore the influence of charge equilibration time on device behavior, finding that pulsed gating improves output characteristics. We also use surface potential measurements to investigate the interfacial vacuum level offset between materials, and we modify the interlayer potential profile by interposing statically charged dielectric layers on the silicon dioxide. We show that interfacial fields determine the gate voltage range over which Te shows a field effect in heterostructures with organic semiconductors and that modification of these fields can extend this range.