Piezotronic effect in flexible thin-film based devices

Theoretical Analysis of Piezoelectric Semiconductor Thick Plates with Periodic Boundary Conditions

Piezoelectric semiconductors, being materials with both piezoelectric and semiconducting properties, are of particular interest for use in multi-functional devices and naturally result in multi-physics analysis. This study provides analytical solutions for thick piezoelectric semiconductor plates with periodic boundary conditions and includes an investigation of electromechanical coupling effects. Using the linearization of the drift-diffusion equations for both electrons and holes for small carrier concentration perturbations, the governing equations are solved by the extended Stroh formalism, which is a method for solving the eigenvalues and eigenvectors of a problem. The solution, obtained in the form of a series expansion with an unknown coefficient, is solved by matching Fourier series expansions of the boundary conditions. The distributions of electromechanical fields and the concentrations of electrons and holes under four-point bending and three-point bending loads are calculated theoretically. The effects of changing the period length and steady-state carrier concentrations are covered in the discussion, which also reflects the extent of coupling in multi-physics interactions. The results provide a theoretical method for understanding and designing with piezoelectric semiconductor materials.

Piezotronic Antimony Sulphoiodide/Polyvinylidene Composite for Strain-Sensing and Energy-Harvesting Applications

This study investigates the piezoelectric and piezotronic properties of a novel composite material comprising polyvinylidene fluoride (PVDF) and antimony sulphoiodide (SbSI) nanowires. The material preparation method is detailed, showcasing its simplicity and reproducibility. The material's electrical resistivity, piezoelectric response, and energy-harvesting capabilities are systematically analyzed under various deflection conditions and excitation frequencies. The piezoelectric response is characterized by the generation of charge carriers in the material due to mechanical strain, resulting in voltage output. The fundamental phenomena of charge generation, along with their influence on the material's resistivity, are proposed. Dynamic strain testing reveals the composite's potential as a piezoelectric nanogenerator (PENG), converting mechanical energy into electrical energy. Comparative analyses highlight the composite's power density advantages, thereby demonstrating its potential for energy-harvesting applications. This research provides insights into the interplay between piezoelectric and piezotronic phenomena in nanocomposites and their applicability in energy-harvesting devices.

Fundamentals and Applications of ZnO-Nanowire-Based Piezotronics and Piezo-Phototronics

The piezotronic effect is a coupling effect of semiconductor and piezoelectric properties. The piezoelectric potential is used to adjust the p-n junction barrier width and Schottky barrier height to control carrier transportation. At present, it has been applied in the fields of sensors, human-machine interaction, and active flexible electronic devices. The piezo-phototronic effect is a three-field coupling effect of semiconductor, photoexcitation, and piezoelectric properties. The piezoelectric potential generated by the applied strain in the piezoelectric semiconductor controls the generation, transport, separation, and recombination of carriers at the metal-semiconductor contact or p-n junction interface, thereby improving optoelectronic devices performance, such as photodetectors, solar cells, and light-emitting diodes (LED). Since then, the piezotronics and piezo-phototronic effects have attracted vast research interest due to their ability to remarkably enhance the performance of electronic and optoelectronic devices. Meanwhile, ZnO has become an ideal material for studying the piezotronic and piezo-phototronic effects due to its simple preparation process and better biocompatibility. In this review, first, the preparation methods and structural characteristics of ZnO nanowires (NWs) with different doping types were summarized. Then, the theoretical basis of the piezotronic effect and its application in the fields of sensors, biochemistry, energy harvesting, and logic operations (based on piezoelectric transistors) were reviewed. Next, the piezo-phototronic effect in the performance of photodetectors, solar cells, and LEDs was also summarized and analyzed. In addition, modulation of the piezotronic and piezo-phototronic effects was compared and summarized for different materials, structural designs, performance characteristics, and working mechanisms' analysis. This comprehensive review provides fundamental theoretical and applied guidance for future research directions in piezotronics and piezo-phototronics for optoelectronic devices and energy harvesting.

Application of Piezoelectric Material and Devices in Bone Regeneration

Bone injuries are common in clinical practice. Given the clear disadvantages of autologous bone grafting, more efficient and safer bone grafts need to be developed. Bone is a multidirectional and anisotropic piezoelectric material that exhibits an electrical microenvironment; therefore, electrical signals play a very important role in the process of bone repair, which can effectively promote osteoblast differentiation, migration, and bone regeneration. Piezoelectric materials can generate electricity under mechanical stress without requiring an external power supply; therefore, using it as a bone implant capable of harnessing the body's kinetic energy to generate the electrical signals needed for bone growth is very promising for bone regeneration. At the same time, devices composed of piezoelectric material using electromechanical conversion technology can effectively monitor the structural health of bone, which facilitates the adjustment of the treatment plan at any time. In this paper, the mechanism and classification of piezoelectric materials and their applications in the cell, tissue, sensing, and repair indicator monitoring aspects in the process of bone regeneration are systematically reviewed.

Bottom-Gated ZnO TFT Pressure Sensor with 1D Nanorods

In this study, a bottom-gated ZnO thin film transistor (TFT) pressure sensor with nanorods (NRs) is suggested. The NRs are formed on a planar channel of the TFT by hydrothermal synthesis for the mediators of pressure amplification. The fabricated devices show enhanced sensitivity by 16~20 times better than that of the thin film structure because NRs have a small pressure transmission area and causes more strain in the underlayered piezoelectric channel material. When making a sensor with a three-terminal structure, the leakage current in stand-by mode and optimal conductance state for pressure sensor is expected to be controlled by the gate voltage. A scanning electron microscope (SEM) was used to identify the nanorods grown by hydrothermal synthesis. X-ray diffraction (XRD) was used to compare ZnO crystallinity according to device structure and process conditions. To investigate the effect of NRs, channel mobility is also extracted experimentally and the lateral flow of current density is analyzed with simulation (COMSOL) showing that when the piezopotential due to polarization is formed vertically in the channel, the effective mobility is degraded.

Progress in ZnO Nanosensors

Developing various nanosensors with superior performance for accurate and sensitive detection of some physical signals is essential for advances in electronic systems. Zinc oxide (ZnO) is a unique semiconductor material with wide bandgap (3.37 eV) and high exciton binding energy (60 meV) at room temperature. ZnO nanostructures have been investigated extensively for possible use as high-performance sensors, due to their excellent optical, piezoelectric and electrochemical properties, as well as the large surface area. In this review, we primarily introduce the morphology and major synthetic methods of ZnO nanomaterials, with a brief discussion of the advantages and weaknesses of each method. Then, we mainly focus on the recent progress in ZnO nanosensors according to the functional classification, including pressure sensor, gas sensor, photoelectric sensor, biosensor and temperature sensor. We provide a comprehensive analysis of the research status and constraints for the development of ZnO nanosensor in each category. Finally, the challenges and future research directions of nanosensors based on ZnO are prospected and summarized. It is of profound significance to research ZnO nanosensors in depth, which will promote the development of artificial intelligence, medical and health, as well as industrial, production.

Long-term reliable physical health monitoring by sweat pore-inspired perforated electronic skins

Electronic skins (e-skins)-electronic sensors mechanically compliant to human skin-have long been developed as an ideal electronic platform for noninvasive human health monitoring. For reliable physical health monitoring, the interface between the e-skin and human skin must be conformal and intact consistently. However, conventional e-skins cannot perfectly permeate sweat in normal day-to-day activities, resulting in degradation of the intimate interface over time and impeding stable physical sensing. Here, we present a sweat pore-inspired perforated e-skin that can effectively suppress sweat accumulation and allow inorganic sensors to obtain physical health information without malfunctioning. The auxetic dumbbell through-hole patterns in perforated e-skins lead to synergistic effects on physical properties including mechanical reliability, conformability, areal mass density, and adhesion to the skin. The perforated e-skin allows one to laminate onto the skin with consistent homeostasis, enabling multiple inorganic sensors on the skin to reliably monitor the wearer's health over a period of weeks.

Self-powered flexible photodetectors based on Ag nanoparticle-loaded g-C3N4 nanosheets and PVDF hybrids: role of plasmonic and piezoelectric effects

Here we demonstrate novel self-powered photodetection using silver (Ag) nanoparticle-loaded two-dimensional graphitic carbon nitride (g-C₃N₄) nanosheets triggered by poly-vinylidene fluoride (PVDF)-based flexible piezoelectric nanogenerators. A self-poled PVDF-based nanogenerator has been obtained upon exploiting pristine g-C₃N₄ nanosheets as a filler material within the PVDF matrix. The fabricated nanogenerator devices are found to be highly efficient in generating the maximum voltage of ∼2.3 V and maximum power ∼110 μWatt/cm², upon finger tapping. Further, the integration of an additional layer of plasmonic Ag nanoparticle-loaded g-C₃N₄ nanosheets, has led to a significant enhancement of photoresponse. The hybrid plasmonic nanogenerator (with a strain of ∼0.021%) has resulted in self-powered photodetection with a photo-to-dark current ratio of ∼60, as compared to the unstrained device (∼2.0). In contrast to the usual behaviour (positive photoresponse), the exposure of an ultraviolet light lowers the output current indicating a negative photoresponse reported for the first time in such a system. The origin of such negative photoresponse has been attributed to the screening of piezopotential of PVDF by photogenerated carriers of g-C₃N₄ nanosheets. On the other hand, visible light-induced positive photoresponse has originated from the increment in the current, indicating the useful role of Ag nanoparticles in plasmon-induced hot electron transfer process.

Effect of GO Additive in ZnO/rGO Nanocomposites with Enhanced Photosensitivity and Photocatalytic Activity

Zinc oxide/reduced graphene oxide nanocomposites (ZnO/rGO) are synthesized via a simple one-pot solvothermal technique. The nanoparticle-nanorod turnability was achieved with the increase in GO additive, which was necessary to control the defect formation. The optimal defect in ZnO/rGO not only increased ZnO/rGO surface and carrier concentration, but also provided the alternative carrier pathway assisted with rGO sheet for electron-hole separation and prolonging carrier recombination. These properties are ideal for photodetection and photocatalytic applications. For photosensing properties, ZnO/rGO shows the improvement of photosensitivity compared with pristine ZnO from 1.51 (ZnO) to 3.94 (ZnO/rGO (20%)). Additionally, applying bending strain on ZnO/rGO enhances its photosensitivity even further, as high as 124% at r = 12.5 mm, due to improved surface area and induced negative piezoelectric charge from piezoelectric effect. Moreover, the photocatalytic activity with methylene blue (MB) was studied. It was observed that the rate of MB degradation was higher in presence of ZnO/rGO than pristine ZnO. Therefore, ZnO/rGO became a promising materials for different applications.

Crystallography at the nanoscale: planar defects in ZnO nanospikes

The examination of anisotropic nanostructures, such as wires, platelets or spikes, inside a transmission electron microscope is normally performed only in plan view. However, intrinsic defects such as growth twin interfaces could occasionally be concealed from direct observation for geometric reasons, leading to superposition. This article presents the shadow-focused ion-beam technique to prepare multiple electron-beam-transparent cross-section specimens of ZnO nanospikes, via a procedure which could be readily extended to other anisotropic structures. In contrast with plan-view data of the same nanospikes, here the viewing direction allows the examination of defects without superposition. By this method, the coexistence of two twin configurations inside the wurtzite-type structure is observed, namely and , which were not identified during the plan-view observations owing to superposition of the domains. The defect arrangement could be the result of coalescence twinning of crystalline nuclei formed on the partially molten Zn substrate during the flame-transport synthesis. Three-dimensional defect models of the twin interface structures have been derived and are correlated with the plan-view investigations by simulation.

Piezotronics and Piezo-phototronics of Third Generation Semiconductor Nanowires

With the fast development of nanoscience and nanotechnology in the last 30 years, semiconductor nanowires have been widely investigated in the areas of both electronics and optoelectronics. Among them, representatives of third generation semiconductors, such as ZnO and GaN, have relatively large spontaneous polarization along their longitudinal direction of the nanowires due to the asymmetric structure in their c-axis direction. Two-way or multiway couplings of piezoelectric, photoexcitation, and semiconductor properties have generated new research areas, such as piezotronics and piezo-phototronics. In this review, an in-depth discussion of the mechanisms and applications of nanowire-based piezotronics and piezo-phototronics is presented. Research on piezotronics and piezo-phototronics has drawn much attention since the effective manipulation of carrier transport, photoelectric properties, etc. through the application of simple mechanical stimuli and, conversely, since the design of new strain sensors based on the strain-induced change in semiconductor properties.

Piezo-phototronic Effect Enhanced Efficient Flexible Perovskite Solar Cells

Tremendous work has been made recently to improve the power conversion efficiencies (PCEs) of perovskite solar cells (PSCs); the best reported value is now over 23%. However, further improving the PCEs of PSCs is challenged by material properties, device stability, and packaging technologies. Here, we report a new approach to increase the PCEs of flexible PSCs via introducing the piezo-phototronic effect in the PSCs by growing an array of ZnO nanowires on flexible plastic substrates, which act as the electron-transport layer for PSCs. From the piezo-phototronic effect, the absolute PCE was improved from 9.3 to 12.8% for flexible perovskite solar cells under a static mechanical strain of 1.88%, with a ∼40% enhancement but no change in the components of materials and device structure. A corresponding working model was proposed to elucidate the strategy to boost the performance of the PSCs. These findings present a general approach to improve PCEs of flexible PSCs without changing their fundamental materials.

Effect of TC(002) on the Output Current of a ZnO Thin-Film Nanogenerator and a New Piezoelectricity Mechanism at the Atomic Level

Understanding the piezoelectricity mechanism is crucial for developing new materials for better performance. Here, we developed a nanogenerator based on the ZnO thin films having various TC(002) values. The output current well correlated to the magnitude of (002) texture coefficient (TC(002)). Additionally, the TC(002)-dependent photovoltaic and rectification properties are observed. When the film is subjected to persistent compression, the photovoltaic, rectification, and piezoelectric properties fade away. Based on our observation that the ZnO polar structure always shows a spontaneous electron field (SEF), we thus propose a new piezoelectricity mechanism. The [001]-orientated ZnO thin film with the SEF is equivalent to a capacitor, the compression functions as a discharging process, and the removal of the external stress serves as a charging process. The physical mechanism provides an insight into various energy conversion processes that will inspire advanced designs of high-performance nanogenerators, solar cells, and other optoelectronic devices.

Piezo-phototronic mediated enhanced photodetection characteristics of plasmonic Au-g-C3N4/CdS/ZnO based hybrid heterojunctions on a flexible platform

We have studied the piezo-phototronic induced enhancement in the photo-response of CdS/ZnO heterojunctions attached with plasmonic Au nanoparticle loaded 2D-graphitic carbon nitride (g-C3N4). The hybrid g-C3N4/CdS/ZnO heterojunction favours the charge carrier separation through the formation of a step-like band alignment. Furthermore, the integration of plasmonic Au loaded g-C3N4 nanosheets on the conventional CdS/ZnO heterojunction facilitates improved visible light absorption properties. The heterojunction device on a flexible platform under the application of a strain (∼0.017%) exhibits ∼102 times higher photoresponse over the control sample at a constant bias of ∼2 V. The variation in the photo-response under different bending conditions has been explained in terms of the improved charge transport through the modified energy bands at the interface of ZnO. The improved piezo-phototronic properties originated from the plasmonic properties of Au loaded g-C3N4 and the piezoelectric characteristics of c-axis oriented ZnO films may be used for future flexible photonic devices.

Crystal-Structure-Dependent Piezotronic and Piezo-Phototronic Effects of ZnO/ZnS Core/Shell Nanowires for Enhanced Electrical Transport and Photosensing Performance

We report the crystal-structure-dependent piezotronic and piezo-phototronic effects of ZnO/ZnS core/shell nanowires (CS NWs) having different shell layer crystalline structures. The wurtzite (WZ) ZnO/WZ ZnS CS NWs showed higher electrical transport and photosensing properties under external strain than the WZ ZnO/zinc blende (ZB) ZnS CS NWs. The WZ ZnO/WZ ZnS CS NWs under a compressive strain of -0.24% showed 4.4 and 8.67 times larger increase in the output current (1.93 × 10^-4 A) and photoresponsivity (8.76 × 10^-1 A/W) than those under no strain. However, the WZ ZnO/ZB ZnS CS NWs under the same strain condition showed 3.2 and 2.16 times larger increase in the output current (1.13 × 10^-4 A) and photoresponsivity (2.16 × 10^-1 A/W) than those under no strain. This improvement is ascribed to strain-induced piezopolarization charges at both the WZ ZnO NWs and the grains of the WZ ZnS shell layer in WZ ZnO/WZ ZnS CS NWs, whereas piezopolarization charges are induced only in the ZnO core region of the WZ ZnO/ZB ZnS CS NWs. These charges can change the type-II band alignment in the ZnO and ZnS interfacial region as well as the Schottky barrier height at the junction between the semiconductor and the metal, thus facilitating electrical transport and reducing the recombination probability of charge carriers under UV irradiation.

Out-of-Plane Piezoelectricity and Ferroelectricity in Layered α-In2Se3 Nanoflakes

Piezoelectric and ferroelectric properties in the two-dimensional (2D) limit are highly desired for nanoelectronic, electromechanical, and optoelectronic applications. Here we report the first experimental evidence of out-of-plane piezoelectricity and ferroelectricity in van der Waals layered α-In₂Se₃ nanoflakes. The noncentrosymmetric R3m symmetry of the α-In₂Se₃ samples is confirmed by scanning transmission electron microscopy, second-harmonic generation, and Raman spectroscopy measurements. Domains with opposite polarizations are visualized by piezo-response force microscopy. Single-point poling experiments suggest that the polarization is potentially switchable for α-In₂Se₃ nanoflakes with thicknesses down to ∼10 nm. The piezotronic effect is demonstrated in two-terminal devices, where the Schottky barrier can be modulated by the strain-induced piezopotential. Our work on polar α-In₂Se₃, one of the model 2D piezoelectrics and ferroelectrics with simple crystal structures, shows its great potential in electronic and photonic applications.

Tunable Strain in Magnetoelectric ZnO Microrod Composite Interfaces

The intrinsic strain at coupled components in magnetoelectric composites plays an important role for the properties and function of these materials. In this in situ X-ray nanodiffraction experiment, the coating-induced as well as the magnetic-field-induced strain at the coupled interface of complex magnetoelectric microcomposites were investigated. These consist of piezoelectric ZnO microrods coated with an amorphous layer of magnetostrictive (Fe₉₀Co₁₀)₇₈Si₁₂B₁₀. While the intrinsic strain is in the range of 10^-4, the magnetic-field-induced strain is within 10^-5, one order of magnitude smaller. Additionally, the strain relaxation distance of around 5 μm for both kinds of strain superposes indicating a correlation. The value of both intrinsic and magnetic-field-induced strain can be manipulated by the diameter of the rodlike composite. The intrinsic interface strain within the ZnO increases exponentially by decreasing the rod diameter while the magnetic-field-induced strain increases linearly within the given range. This study shows that miniaturizing has a huge impact on magnetoelectric composite properties, resulting in a strongly enhanced strain field and magnetic response.

Enhancing the Efficiency of Silicon-Based Solar Cells by the Piezo-Phototronic Effect

Although there are numerous approaches for fabricating solar cells, the silicon-based photovoltaics are still the most widely used in industry and around the world. A small increase in the efficiency of silicon-based solar cells has a huge economic impact and practical importance. We fabricate a silicon-based nanoheterostructure (p⁺-Si/p-Si/n⁺-Si (and n-Si)/n-ZnO nanowire (NW) array) photovoltaic device and demonstrate the enhanced device performance through significantly enhanced light absorption by NW array and effective charge carrier separation by the piezo-phototronic effect. The strain-induced piezoelectric polarization charges created at n-doped Si-ZnO interfaces can effectively modulate the corresponding band structure and electron gas trapped in the n⁺-Si/n-ZnO NW nanoheterostructure and thus enhance the transport process of local charge carriers. The efficiency of the solar cell was improved from 8.97% to 9.51% by simply applying a static compress strain. This study indicates that the piezo-phototronic effect can enhance the performance of a large-scale silicon-based solar cell, with great potential for industrial applications.

Flexible tri-layer piezoelectric nanogenerator based on PVDF-HFP/Ni-doped ZnO nanocomposites

In this work, we report Ni doped ZnO/poly(vinylidene fluoride-hexafluoropropylene) [PVDF-HFP] nanocomposites prepared by sandwiching and highlight their application in piezoelectric nano-generators.

Piezo-phototronic effect enhanced UV photodetector based on CuI/ZnO double-shell grown on flexible copper microwire

In this work, we present a facile, low-cost, and effective approach to fabricate the UV photodetector with a CuI/ZnO double-shell nanostructure which was grown on common copper microwire. The enhanced performances of Cu/CuI/ZnO core/double-shell microwire photodetector resulted from the formation of heterojunction. Benefiting from the piezo-phototronic effect, the presentation of piezocharges can lower the barrier height and facilitate the charge transport across heterojunction. The photosensing abilities of the Cu/CuI/ZnO core/double-shell microwire detector are investigated under different UV light densities and strain conditions. We demonstrate the I-V characteristic of the as-prepared core/double-shell device; it is quite sensitive to applied strain, which indicates that the piezo-phototronic effect plays an essential role in facilitating charge carrier transport across the CuI/ZnO heterojunction, then the performance of the device is further boosted under external strain.

High-performance flexible ZnO nanorod UV photodetectors with a network-structured Cu nanowire electrode

In this work, vertically aligned zinc oxide (ZnO) nanorod (NR)-based flexible ultraviolet (UV) photodetectors were successfully fabricated on a polyimide (PI) substrate with a copper (Cu) nanowire (NW) electrode. To enhance the flexibility and sensing properties, the entangled networks of Cu NWs were applied to UV photodetectors as a flexible electrode. Here, Cu NWs have a high conductivity with a low cost compared to other metals to achieve a Schottky contact with ZnO NRs. Moreover, because of forming a network structure, the surface of the sensing material has a large contact area with oxygen molecules, resulting in a faster response time. The Cu NW electrode exhibited a high optical transmittance of 90%, a considerable sheet resistance of 50 Ω sq^-1, and a work function of 5.12 eV. Consequentially, the fabricated UV photodetector with Cu NW electrodes showed excellent UV sensing properties with a very fast rising time of 0.7 s and a decay time of 1.9 s in the dark and under UV illumination (365 nm, 0.40 mW cm^-2) at a reverse bias of -2.0 V. Furthermore, during the bending test at a radius of curvature of 5 mm, the flexible ZnO NR UV photodetectors with Cu NW electrodes exhibited almost unchanged UV sensing properties even after 5000 cycles.

p-Type MoS2 and n-Type ZnO Diode and Its Performance Enhancement by the Piezophototronic Effect

A plasma-induced p-type MoS2 flake and n-type ZnO film diode, which exhibits an excellent rectification ratio, is demonstrated. Under 365 nm optical irradiation, this p-n diode shows a strong photoresponse with an external quantum efficiency of 52.7% and a response time of 66 ms. By increasing the pressure on the junction to 23 MPa, the photocurrent can be enhanced by a factor of four through the piezophototronic effect.

Improved Photoresponse Performance of Self-Powered ZnO/Spiro-MeOTAD Heterojunction Ultraviolet Photodetector by Piezo-Phototronic Effect

Strain-induced piezoelectric potential (piezopotential) within wurtzite-structured ZnO can engineer the energy-band structure at a contact or a junction and, thus, enhance the performance of corresponding optoelectronic devices by effectively tuning the charge carriers' separation and transport. Here, we report the fabrication of a flexible self-powered ZnO/Spiro-MeOTAD hybrid heterojunction ultraviolet photodetector (UV PD). The obtained device has a fast and stable response to the UV light illumination at zero bias. Together with responsivity and detectivity, the photocurrent can be increased about 1-fold upon applying a 0.753% tensile strain. The enhanced performance can be attributed to more efficient separation and transport of photogenerated electron-hole pairs, which is favored by the positive piezopotential modulated energy-band structure at the ZnO-Spiro-MeOTAD interface. This study demonstrates a promising approach to optimize the performance of a photodetector made of piezoelectric semiconductor materials through straining.

Piezotronic Effect Enhanced Photocatalysis in Strained Anisotropic ZnO/TiO₂ Nanoplatelets via Thermal Stress

Effective piezoelectric semiconductor based hybrid photocatalysts are successfully developed by assembling TiO2 nanoparticles on ZnO monocrystalline nanoplatelets. The piezopotential can be introduced and tuned by thermal stress on the piezoelectric material of ZnO monocrystalline nanoplatelets through cooling hybrid photocatalysts from high temperature to room temperature with different rates based on the mismatched thermal expansion coefficient of the two materials, which can be used to engineer the heterojunction band structure and significantly enhance the photocatalytic performance in a wide range by improving charge separation. It is proposed that the piezotronic effect enhanced photocatalyst will provide a strategy for high-performance photocatalysis applications.

Strain-Gated Field Effect Transistor of a MoS2-ZnO 2D-1D Hybrid Structure

Two-dimensional (2D) molybdenum disulfide (MoS2) is an exciting material due to its unique electrical, optical, and piezoelectric properties. Owing to an intrinsic band gap of 1.2-1.9 eV, monolayer or a-few-layer MoS2 is used for fabricating field effect transistors (FETs) with high electron mobility and on/off ratio. However, the traditional FETs are controlled by an externally supplied gate voltage, which may not be sensitive enough to directly interface with a mechanical stimulus for applications in electronic skin. Here we report a type of top-pressure/force-gated field effect transistors (PGFETs) based on a hybrid structure of a 2D MoS2 flake and 1D ZnO nanowire (NW) array. Once an external pressure is applied, the piezoelectric polarization charges created at the tips of ZnO NWs grown on MoS2 act as a gate voltage to tune/control the source-drain transport property in MoS2. At a 6.25 MPa applied stimulus on a packaged device, the source-drain current can be tuned for ∼25%, equivalent to the results of applying an extra -5 V back gate voltage. Another type of PGFET with a dielectric layer (Al2O3) sandwiched between MoS2 and ZnO also shows consistent results. A theoretical model is proposed to interpret the received data. This study sets the foundation for applying the 2D material-based FETs in the field of artificial intelligence.

Lattice Strain Induced Remarkable Enhancement in Piezoelectric Performance of ZnO-Based Flexible Nanogenerators

In this work, by employing halogen elements (fluorine, chlorine, bromine, and iodine) as dopant we demonstrate a unique strategy to enhance the output performance of ZnO-based flexible piezoelectric nanogenerators. For a halogen-doped ZnO nanowire film, dopants and doping concentration dependent lattice strain along the ZnO c-axis are established and confirmed by the EDS, XRD, and HRTEM analysis. Although lattice strain induced charge separation was theoretically proposed, it has not been experimentally investigated for wurtzite structured ZnO nanomaterials. Tuning the lattice strain from compressive to tensile state along the ZnO c-axis can be achieved by a substitution of halogen dopant from fluorine to other halogen elements due to the ionic size difference between dopants and oxygen. With its focus on a group of nonmetal element induced lattice strain in ZnO-based nanomaterials, this work paves the way for enhancing the performance of wurtzite-type piezoelectric semiconductor nanomaterials via lattice strain strategy which can be employed to construct piezoelectric nanodevices with higher efficiency in a cost-effective manner.

Enhanced electromechanical performance in metal–MgO–ZnO tunneling diodes due to the insulator layers

The enhanced electromechanical performance of metal–MgO–ZnO MISTDs is due to the highly strain sensitive energy barriers.

Ultrasensitive Thin-Film-Based Alx Ga1-x N Piezotronic Strain Sensors via Alloying-Enhanced Piezoelectric Potential

Alx Ga1-x N thin-film-based piezotronic strain sensors with ultrahigh strain sensitivity are fabricated through alloying of AlN with GaN. The strain sensitivity of the ternary compound Alx Ga1-x N is higher than those of the individual binary compounds GaN and AlN. Such a high performance can be attributed to the piezoelectric constant enhancement via intercalation of Al atoms into the GaN matrix, the effect of residual strain, and a suppressed screening effect.

Nanoparticle-Structured Highly Sensitive and Anisotropic Gauge Sensors

The ability to tune gauge factors in terms of magnitude and orientation is important for wearable and conformal electronics. Herein, a sensor device is described which is fabricated by assembling and printing molecularly linked thin films of gold nanoparticles on flexible microelectrodes with unusually high and anisotropic gauge factors. A sharp difference in gauge factors up to two to three orders of magnitude between bending perpendicular (B(⊥)) and parallel (B(||)) to the current flow directions is observed. The origin of the unusual high and anisotropic gauge factors is analyzed in terms of nanoparticle size, interparticle spacing, interparticle structure, and other parameters, and by considering the theoretical aspects of electron conduction mechanism and percolation pathway. A critical range of resistivity where a very small change in strain and the strain orientation is identified to impact the percolation pathway in a significant way, leading to the high and anisotropic gauge factors. The gauge anisotropy stems from molecular and nanoscale fine tuning of interparticle properties of molecularly linked nanoparticle assembly on flexible microelectrodes, which has important implication for the design of gauge sensors for highly sensitive detection of deformation in complex sensing environment or on complex curved surfaces such as wearable electronics and skin sensors.

Piezotronic Effect: An Emerging Mechanism for Sensing Applications

Strain-induced polarization charges in a piezoelectric semiconductor effectively modulate the band structure near the interface and charge carrier transport. Fundamental investigation of the piezotronic effect has attracted broad interest, and various sensing applications have been demonstrated. This brief review discusses the fundamentals of the piezotronic effect, followed by a review highlighting important applications for strain sensors, pressure sensors, chemical sensors, photodetectors, humidity sensors and temperature sensors. Finally, the review offers some perspectives and outlook for this new field of multi-functional sensing enabled by the piezotronic effect.

Piezoelectric effect in chemical vapour deposition-grown atomic-monolayer triangular molybdenum disulfide piezotronics

High-performance piezoelectricity in monolayer semiconducting transition metal dichalcogenides is highly desirable for the development of nanosensors, piezotronics and photo-piezotransistors. Here we report the experimental study of the theoretically predicted piezoelectric effect in triangle monolayer MoS₂ devices under isotropic mechanical deformation. The experimental observation indicates that the conductivity of MoS₂ devices can be actively modulated by the piezoelectric charge polarization-induced built-in electric field under strain variation. These polarization charges alter the Schottky barrier height on both contacts, resulting in a barrier height increase with increasing compressive strain and decrease with increasing tensile strain. The underlying mechanism of strain-induced in-plane charge polarization is proposed and discussed using energy band diagrams. In addition, a new type of MoS₂ strain/force sensor built using a monolayer MoS₂ triangle is also demonstrated. Our results provide evidence for strain-gating monolayer MoS₂ piezotronics, a promising avenue for achieving augmented functionalities in next-generation electronic and mechanical–electronic nanodevices.

Two-dimensional transition-metal-dichalcogenide materials should have strong piezoelectric properties, making them useful for nanosensors and piezotronics. Here, the authors experimentally demonstrate the piezoelectric effect in monolayer molybdenum disulfide and show how this can modulate conductivity.

Evaluation of the piezoelectric properties and voltage generation of flexible zinc oxide thin films

Local piezoresponse and piezoelectric output voltage were evaluated on ZnO thin films deposited by radio-frequency magnetron sputtering on hard Si/Ti/Au and flexible Cu-coated polyimide substrates. Three different thicknesses of ZnO films were studied (285 nm, 710 nm, and 1380 nm), focusing on characteristics like crystallinity, grain size, surface roughness, and morphology. Independent of the nature of the metal layer and the substrate, our results show that thicker films presented a higher level of crystallinity and a preferential orientation along the c-axis direction, as well as a lower density of grain boundaries and larger crystal sizes. The improvement of the crystalline structure of the material directly enhances its piezoelectric properties, as confirmed by the local characterizations performed by piezoresponse force microscopy and by the evaluation of the output voltage generation under the application of a periodical mechanical deformation on the whole film. In particular, the highest value of the d33 coefficient obtained (8 pm V(-1)) and the highest generated output voltage (0.746 V) belong to the thickest films on hard and flexible substrates, respectively. These results envision the use of ZnO thin films--particularly on flexible substrates--as conformable, reliable, and efficient active materials for use in nanosensing, actuation, and piezoelectric nanogenerators.

Oxide nanomembrane hybrids with enhanced mechano- and thermo-sensitivity for semitransparent epidermal electronics

Oxide nanomembrane hybrids with enhanced mechano- and thermo-sensitivity for semitransparent epidermal electronics are developed. The use of nanomaterials (single wall nanotubes and silver nanoparticles) embedded in the oxide nanomembranes significantly enhances mechanical and thermal sensitivities. These mechanical and thermal sensors are utilized in wheelchair control and hypothermia detection, which are useful for patients with strokes.

Contact electrification field-effect transistor

Utilizing the coupled metal oxide semiconductor field-effect transistor and triboelectric nanogenerator, we demonstrate an external force triggered/controlled contact electrification field-effect transistor (CE-FET), in which an electrostatic potential across the gate and source is created by a vertical contact electrification between the gate material and a “foreign” object, and the carrier transport between drain and source can be tuned/controlled by the contact-induced electrostatic potential instead of the traditional gate voltage. With the two contacted frictional layers vertically separated by 80 μm, the drain current is decreased from 13.4 to 1.9 μA in depletion mode and increased from 2.4 to 12.1 μA in enhancement mode at a drain voltage of 5 V. Compared with the piezotronic devices that are controlled by the strain-induced piezoelectric polarization charged at an interface/junction, the CE-FET has greatly expanded the sensing range and choices of materials in conjunction with semiconductors. The CE-FET is likely to have important applications in sensors, human–silicon technology interfacing, MEMS, nanorobotics, and active flexible electronics. Based on the basic principle of the CE-FET, a field of tribotronics is proposed for devices fabricated using the electrostatic potential created by triboelectrification as a “gate” voltage to tune/control charge carrier transport in conventional semiconductor devices. By the three-way coupling among triboelectricity, semiconductor, and photoexcitation, plenty of potentially important research fields are expected to be explored in the near future.

Piezotronic effect on ZnO nanowire film based temperature sensor

In this work, we demonstrated the first study of piezotronic effect as a potential means for measuring temperature by utilizing ZnO nanowire (NW) film. The film was synthesized by the wet chemical deposition method and transferred to a flexible substrate using photoresist. The primary role of piezotronic effect over geometrical and piezoresistive effect in the as-fabricated devices has been confirmed, and piezotronic effect on charge carrier transportation under different strains is subsequently studied. In addition, we also presented that the temperature sensing capability of as-fabricated NW film based piezotronic devices can be tuned by piezopotential, which exhibits dramatically enhanced sensitivity. A theoretical model is proposed to interpret the observed behaviors of the sensor. This study provides an effective method to fabricate temperature sensors with higher performance based on piezotronic effect in the future.

Piezotronics and piezo-phototronics: fundamentals and applications

Technology advancement that can provide new solutions and enable augmented capabilities to complementary metal–oxide–semiconductor (CMOS)-based technology, such as active and adaptive interaction between machine and human/ambient, is highly desired. Piezotronic nanodevices and integrated systems exhibit potential in achieving these application goals. Utilizing the gating effect of piezopotential over carrier behaviors in piezoelectric semiconductor materials under externally applied deformation, the piezoelectric and semiconducting properties together with optoelectronic excitation processes can be coupled in these materials for the investigation of novel fundamental physics and the implementation of unprecedented applications. Piezopotential is created by the strain-induced ionic polarization in the piezoelectric semiconducting crystal. Piezotronics deal with the devices fabricated using the piezopotential as a ‘gate’ voltage to tune/control charge-carrier transport across the metal–semiconductor contact or the p–n junction. Piezo-phototronics is to use the piezopotential for controlling the carrier generation, transport, separation and/or recombination for improving the performance of optoelectronic devices. This review intends to provide an overview of the rapid progress in the emerging fields of piezotronics and piezo-phototronics. The concepts and results presented in this review show promises for implementing novel nano-electromechanical devices and integrating with micro/nano-electromechanical system technology to achieve augmented functionalities to the state-of-the-art CMOS technology that may find applications in the human–machine interfacing, active flexible/stretchable electronics, sensing, energy harvesting, biomedical diagnosis/therapy, and prosthetics.

GaN nanobelt-based strain-gated piezotronic logic devices and computation

Using the piezoelectric polarization charges created at the metal-GaN nanobelt (NB) interface under strain to modulate transport of local charge carriers across the Schottky barrier, the piezotronic effect is utilized to convert mechanical stimuli applied on the wurtzite-structured GaN NB into electronic controlling signals, based on which the GaN NB strain-gated transistors (SGTs) have been fabricated. By further assembling and integrating GaN NB SGTs, universal logic devices such as NOT, AND, OR, NAND, NOR, and XOR gates have been demonstrated for performing mechanical-electrical coupled piezotronic logic operations. Moreover, basic piezotronic computation such as one-bit binary addition over the input mechanical strains with corresponding computation results in an electrical domain by half-adder has been implemented. The strain-gated piezotronic logic devices may find applications in human-machine interfacing, active flexible/stretchable electronics, MEMS, biomedical diagnosis/therapy, and prosthetics.