Low-dimensional Te-based nanostructures

Fabrication and characterization of hybrid thermoelectric materials based on aligned nanowires

This study introduces the synthesis of a hybrid thermoelectric material with enhanced conductivity and a high Seebeck coefficient, leveraging the properties of Te nanowires (NWs) and the conductive polymer PEDOT:PSS. Te NWs were synthesized using the galvanic displacement reaction. To further enhance conductivity, Ag-Te NWs were synthesized under optimized conditions via the Ag topotactic reaction, achieving desired results within 7 min using ethylene glycol and AgNO3. This hybrid material exhibited an electrical conductivity of 463 S/cm, a Seebeck coefficient of 69.5 μV/K at 300 K, and a power factor of 260 μW/mK2. These metrics surpassed those of conventional Te/PEDOT:PSS hybrids by a factor of 3.6, highlighting the superior performance of our approach. This study represents a significant advancement in thermoelectric materials, improving both conductivity and efficiency.

Phase-Change-Memory Process at the Limit: A Proposal for Utilizing Monolayer Sb2Te3

One central task of developing nonvolatile phase change memory (PCM) is to improve its scalability for high-density data integration. In this work, by first-principles molecular dynamics, to date the thinnest PCM material possible (0.8 nm), namely, a monolayer Sb2Te3, is proposed. Importantly, its SET (crystallization) process is a fast one-step transition from amorphous to hexagonal phase without the usual intermediate cubic phase. An increased spatial localization of electrons due to geometrical confinement is found to be beneficial for keeping the data nonvolatile in the amorphous phase at the 2D limit. The substrate and superstrate can be utilized to control the phase change behavior: e.g., with passivated SiO2 (001) surfaces or hexagonal Boron Nitride, the monolayer Sb2Te3 can reach SET recrystallization in 0.54 ns or even as fast as 0.12 ns, but with unpassivated SiO2 (001), this would not be possible. Besides, working with small volume PCM materials is also a natural way to lower power consumption. Therefore, the proposed PCM working process at the 2D limit will be an important potential strategy of scaling the current PCM materials for ultrahigh-density data storage.

Piezoelectric modulation of broadband photoresponse of flexible tellurium nanomesh photodetectors

Flexible photodetector shows great potential applications in intelligent wearable devices, health monitoring, and biological sensing. In this work, single crystal β-tellurium nanowires were grown on flexible muscovite by molecular beam epitaxy, constructing high-density ordered nanomesh structure. The prepared photodetectors based on tellurium nanomesh exhibit excellent mechanical flexibility, fast response in a broad range from ultraviolet to near-infrared, and good photosensitivity. We found that the flexible photodetectors with Shottky contact drastically suppressed dark current, while the response speed was lowered in comparison to the devices with ohmic contact, as holes would take a long time to tunnel through the Shottky barrier between metal and p-type Te. Moreover, the photoresponse of flexible Shottky photodetectors can be modulated by piezoelectricity of tellurium, and pronounced photocurrent increase after bending many times. Under external stress, polarization charges could tune Shottky barrier height of the metal/tellurium, resulting in variation of photocurrent. This research not only explores the broadband photoresponse and piezoelectric effect of tellurium nanomesh, but also promotes the integration and development of broadband flexible optoelectronic devices.

Heterostructures Based on 2D Materials: A Versatile Platform for Efficient Catalysis

The unique structural and electronic properties of 2D materials, including the metal and metal-free ones, have prompted intense exploration in the search for new catalysts. The construction of different heterostructures based on 2D materials offers great opportunities for boosting the catalytic activity in electo(photo)chemical reactions. Particularly, the merits resulting from the synergism of the constituent components and the fascinating properties at the interface are tremendously interesting. This scenario has now become the state-of-the-art point in the development of active catalysts for assisting energy conversion reactions including water splitting and CO₂ reduction. Here, starting from the theoretical background of the fundamental concepts, the progressive developments in the design and applications of heterostructures based on 2D materials are traced. Furthermore, a personal perspective on the exploration of 2D heterostructures for further potential application in catalysis is offered.

Stabilization of a monolayer tellurene phase at CdTe interfaces

Two-dimensional (2D) materials provide a plethora of novel condensed matter physics and are the new playground in materials science, offering potentially vast applications. One of the critical hurdles for many 2D systems is the synthesis of these low-dimensional systems as well as the prediction and identification of new candidates. Herein, a self-assembly of a monolayer tellurene by bonding CdTe wafers is demonstrated for the first time. The conventional applications of wafer-bonding range from the production of microelectromechanical systems to the synthesis of lattice-mismatched multi-junction photovoltaics. Due to the heterogeneous materials that are typically employed, the bond-interface usually contains a thin amorphous layer or arrays of dislocations. Such an interface is thus itself inactive and in many cases has detrimental effects on the device. The new material phase stabilized in this work consists of an undulating monolayer of tellurium atoms covalently bonded to {111} Cd-terminated CdTe wafer surfaces. First-principles calculations and experimentally observed changes in the localized plasmon excitation energy indicate the clear rearrangement of the underlying band-structure suggesting a metallic character, bands showing linear dispersion, and a significant asymmetric spin-band splitting. The I-V characteristics show the presence of a highly conductive pathway that lowers the resistivity by three orders of magnitude, as compared to bulk CdTe, which can be attributed to the tellurium monolayer. The findings indicate that suitably chosen crystallographic wafer surfaces can act as structural templates allowing the production of exotic phases. The presently stabilized monolayer is an addition to the family of tellurene variants, providing new insights into the fundamental properties of this and other emerging 2D materials, while attracting attention to the unusual side of the wafer-bonding technology exemplified in this study.

Realizing zT of 2.3 in Ge1-x-y Sbx Iny Te via Reducing the Phase-Transition Temperature and Introducing Resonant Energy Doping

GeTe with rhombohedral-to-cubic phase transition is a promising lead-free thermoelectric candidate. Herein, theoretical studies reveal that cubic GeTe has superior thermoelectric behavior, which is linked to (1) the two valence bands to enhance the electronic transport coefficients and (2) stronger enharmonic phonon-phonon interactions to ensure a lower intrinsic thermal conductivity. Experimentally, based on Ge_1-x Sb_x Te with optimized carrier concentration, a record-high figure-of-merit of 2.3 is achieved via further doping with In, which induces the distortion of the density of states near the Fermi level. Moreover, Sb and In codoping reduces the phase-transition temperature to extend the better thermoelectric behavior of cubic GeTe to low temperature. Additionally, electronic microscopy characterization demonstrates grain boundaries, a high-density of stacking faults, and nanoscale precipitates, which together with the inevitable point defects result in a dramatically decreased thermal conductivity. The fundamental investigation and experimental demonstration provide an important direction for the development of high-performance Pb-free thermoelectric materials.

Intrinsic ferromagnetism and quantum transport transition in individual Fe-doped Bi2Se3 topological insulator nanowires

Time-reversal symmetry is broken by magnetic doping in topological insulators (TIs). An energy gap at the Dirac point opens and thus, generates numerous surface carriers. TI nanostructures are an ideal platform to investigate exotic surface transport behavior due to their large surface-to-volume ratio, which enhances the contribution of the TI surface states. However, magnetic doping into TI nanostructures has been challenging, and induced magnetic behavior has remained elusive. Herein, we have synthesized Fe-doped Bi₂Se₃ nanowires using a facile chemical vapor deposition with a doping concentration of ∼1 at%. The combined structural characterizations illustrate the homogeneous distribution of the Fe dopants. Cryogenic magnetic force microscopy gives direct evidence of the spontaneous magnetization with a Curie temperature of ∼40 K in a single nanowire. The transport measurements show a quantum transition from weak anti-localization to weak localization behavior. All the evidence indicates the existence of intrinsic ferromagnetism and gapped topological surface states in the TI nanowires, paving a way for future memory and magnetoelectric nanodevice applications.

Solution synthesis of telluride-based nano-barbell structures coated with PEDOT:PSS for spray-printed thermoelectric generators

Solution-processable telluride-based heterostructures coated with poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (Te-Bi2Te3/PEDOT:PSS) were synthesized through a solution-phase reaction at low temperatures. The water-based synthesis yielded

PEDOT

PSS-coated Te-Bi2Te3 nano-barbell structures with a high Seebeck coefficient that can be stably dispersed in water. These hybrid solutions were deposited onto a substrate by the spray-printing method to prepare thermoelectric generators. The thermoelectric properties of the Te-Bi2Te3/PEDOT:PSS hybrid films were significantly enhanced by a simple acid treatment due to the increased electrical conductivity, and the power factor of those materials can be effectively tuned over a wide range depending on the acid concentration of the treatment. The power factors of the synthesized Te-Bi2Te3/PEDOT:PSS hybrids were optimized to 60.05 μW m(-1) K(-2) with a Seebeck coefficient of 93.63 μV K(-1) and an electrical conductivity of 69.99 S cm(-1). The flexible thermoelectric generator fabricated by spray-printing Te-Bi2Te3/PEDOT:PSS hybrid solutions showed an open-circuit voltage of 1.54 mV with six legs at ΔT = 10 °C. This approach presents the potential for realizing printing-processable hybrid thermoelectric materials for application in flexible thermoelectric generators.

Topological Crystalline Insulator Pb1-x Snx Se Nanowires with {100} Facets

Surface states properties of topological crystalline insulator Pb1-x Snx Se are strongly dependent on crystallographic plane orientation. Rectangular prismatic Pbx Sn1-x Se nanowires and nanoplates are grown with distinct {100} surfaces on mica sheets. Substrate surface chemical properties are found to be the critical factors that affect the vapor deposition process and final shapes of Pb1-x Snx Se nanostructures.

Weak antilocalization effect of topological crystalline insulator Pb(1-x)Sn(x)Te nanowires with tunable composition and distinct {100} facets

Pb(1-x)Sn(x)Te is a unique topological crystalline insulator (TCI) that undergoes a topological phase transition from topological trivial insulator to TCI with the change of Sn content and temperature. Meanwhile, the surface states properties of Pb(1-x)Sn(x)Te are strongly dependent on crystallographic plane orientation. In this work, we first reported controllable synthesis of rectangular prismatic Pb(x)Sn(1-x)Te nanowires by vapor deposition method. Rectangular prismatic Pb(x)Sn(1-x)Te nanowires exhibits distinct {100} surfaces. Furthermore, The Sn composition of Pb(1-x)Sn(x)Te nanowires can be continuously controlled from 0 to 1. Low temperature magnetotransport shows that PbTe nanowire exhibits weak localization (WL) effect, whereas Pb0.5Sn0.5Te and Pb0.2Sn0.8Te nanowires display pronounced weak antilocalization (WAL) effect. This transition is explained by the topological phase transform of Pb(1-x)Sn(x)Te from trivial to nontrivial insulator with Sn content (x) exceeding 0.38. Pb(x)Sn(1-x)Te nanowires synthesized in this work lay a foundation for probing spin-correlated electron transport and show great potentials for future applications of tunable spintronic devices.

One-step synthesis of high-quality homogenous Te/Se alloy nanorods with various morphologies

A convenient method was developed for controllable synthesis of homogeneous trigonal Te/Se alloy nanorods (t-Te/Se ANRs) with diverse morphologies, aspect ratios and compositions at room temperature in aqueous solution.

Van der Waals epitaxy and photoresponse of hexagonal tellurium nanoplates on flexible mica sheets

Van der Waals epitaxy (vdWE) is of great interest due to its extensive applications in the synthesis of ultrathin two-dimensional (2D) layered materials. However, vdWE of nonlayered functional materials is still not very well documented. Here, although tellurium has a strong tendency to grow into one-dimensional nanoarchitecture due to its chain-like structure, we successfully realize 2D hexagonal tellurium nanoplates on flexible mica sheets via vdWE. Chemically inert mica surface is found to be crucial for the lateral growth of hexagonal tellurium nanoplates since it (1) facilitates the migration of tellurium adatoms along mica surface and (2) allows a large lattice mismatch. Furthermore, 2D tellurium hexagonal nanoplates-based photodetectors are in situ fabricated on flexible mica sheets. Efficient photoresponse is obtained even after bending the device for 100 times, indicating 2D tellurium hexagonal nanoplates-based photodetectors on mica sheets have a great application potential in flexible and wearable optoelectronic devices. We believe the fundamental understanding of vdWE effect on the growth of 2D tellurium hexagonal nanoplate can pave the way toward leveraging vdWE as a useful channel to realize the 2D geometry of other nonlayered materials.

Topological surface transport properties of single-crystalline SnTe nanowire

SnTe has attracted worldwide interest since its theoretical predication as topological crystalline insulator. Because of promising applications of one-dimensional topological insulator in nanoscale electronics and spintronics device, it is very important to realize the observation of topological surface states in one-dimensional SnTe. In this work, for the first time we successfully synthesized high-quality single crystalline SnTe nanowire via gold-catalyst chemical vapor deposition method. Systematical investigation of Aharonov-Bohm and Shubnikov-de Haas oscillations in single SnTe nanowire prove the existence of Dirac electrons. Further analysis of temperature-dependent Shubnikov-de Haas oscillations gives valuable information of cyclotron mass, mean-free path, and mobility of Dirac electrons in SnTe nanowire. Our study provides the experimental groundwork for research in low-dimensional topological crystalline insulator materials and paves the way for the application of SnTe nanowire in nanoelectronics and spintronics device.