Multilevel conductance switching of a memory device induced by enhanced intermolecular charge transfer

Exploring structural and optical properties of a new series of soft salts based on cyclometalated platinum complexes

A series of nine new soft salts based on two platinum(II) complexes, namely ([Pt(C^N)(CN)2]-[Pt(C^N)(en)]+) (en = ethane-1,2-diamine), has been developed and synthesized. Their photophysical properties in both solution and the solid state were described. All soft salt complexes exhibit phosphorescence emission with PLQY in the solid state up to 0.36. Most of these materials displayed aggregation-induced emission (AIE) or aggregation-induced emission enhancement (AIEE) in water/DMSO solutions as the water ratio increased. Structure-property relationships were analyzed in relation to emission properties. The presence of the free nitrogen atoms in soft salt complexes with a C^N pyrimidine-based ligand allowed for reversible sensitivity to acidic vapors, resulting in the quenching of phosphorescence emission. Additionally, for selected soft salts, we described reversible vapochromism behaviour, making these new materials interesting for multi-detection purposes in anti-counterfeiting applications.

Resistive Memristors Using Robust Electropolymerized Porous Organic Polymer Films as Switchable Materials

Porous organic polymers (POPs) with inherent porosity, tunable pore environment, and semiconductive property are ideally suitable for application in various advanced semiconductor-related devices. However, owing to the lack of processability, POPs are usually prepared in powder forms, which limits their application in advanced devices. Herein, we demonstrate an example of information storage application of POPs with film form prepared by an electrochemical method. The growth process of the electropolymerized films in accordance with the Volmer-Weber model was proposed by observation of atomic force microscopy. Given the mechanism of the electron transfer system, we verified and mainly emphasized the importance of porosity and interfacial properties of porous polymer films for memristor. As expected, the as-fabricated memristors exhibit good performance on low turn-on voltage (0.65 ± 0.10 V), reliable data storage, and high on/off current ratio (104). This work offers inspiration for applying POPs in the form of electropolymerized films in various advanced semiconductor-related devices.

Synapse-Mimicking Memristors Based on 3,6-Di(tpy)-9-Phenylcarbazole Unimer and Its Copolymer with Cobalt(II) Ions

The title compound, unimer U (tpy stands for 2,2':6',2″-terpyridin-4'-yl end-group), by itself shows the memristor effect with a retention time of 18 h and persistence of 11 h. Its coordination copolymer with Co(II) ions, [CoU]n, exhibits multimodal resistance changes similar to the synaptic responses observed in biological systems. More than 320 cycles of potentiation and depression measured in continuous sequence occurred without observing a significant current change, confirming the operational stability and reproducibility of the device based on the [CoU]n polymer. The synaptic effect of a device with an indium tin oxide (ITO)/[CoU]n/top-electrode (TE) configuration is more pronounced for the device with TE = Au compared to devices with TE = Al or Ga. However, the latter TEs provide a cost-effective approach without any significant compromise in device plasticity. The detected changes in the synaptic weight, about 12% for pair-pulse facilitation and 80% for its depression, together with a millisecond trigger and reading pulses that decay exponentially on the time scale typical of neurosynapses, justify the device's ability to learn and memorize. These properties offer potential applications in neuromorphic computation and brain-inspired synaptic devices.

Effect of terminal substituent of iso-indigo-based materials on the intermolecular stacking and memory performance

Attributed to the characteristics of narrow band gap structural units and full spectral response, iso-indigo is often used as an electron acceptor in organic electronic materials. Organic molecules with large conjugated surfaces and strong intermolecular forces can form ordered stacked structures through self-assembly. In this paper, the self-assembly performances of IDCF3 and IDCN are regulated by changing the end groups. The effects of terminal groups on the resistive memory behaviours and reproducibility are investigated. The properties of IDCF3 and IDCN devices are characterized by UV-VIS spectroscopy, cyclic voltammetry and DSC diffraction. The results show that when the end groups with different steric hindrance are introduced into the ends of the molecules with good backbone plane, the conjugated surfaces of the molecules will bend due to the different steric hindrance of the end groups in the form of cambium and layer-ordered packing, which will affect the threshold voltage and device reproducibility.

Remote-Controllable Interfacial Electron Tunneling at Heterogeneous Molecular Junctions via Tip-Induced Optoelectrical Engineering

Molecular electronics enables functional electronic behavior via single molecules or molecular self-assembled monolayers, providing versatile opportunities for hybrid molecular-scale electronic devices. Although various molecular junction structures are constructed to investigate charge transfer dynamics, significant challenges remain in terms of interfacial charging effects and far-field background signals, which dominantly block the optoelectrical observation of interfacial charge transfer dynamics. Here, tip-induced optoelectrical engineering is presented that synergistically correlates photo-induced force microscopy and Kelvin probe force microscopy to remotely control and probe the interfacial charge transfer dynamics with sub-10 nm spatial resolution. Based on this approach, the optoelectrical origin of metal-molecule interfaces is clearly revealed by the nanoscale heterogeneity of the tip-sample interaction and optoelectrical reactivity, which theoretically aligned with density functional theory calculations. For a practical device-scale demonstration of tip-induced optoelectrical engineering, interfacial tunneling is remotely controlled at a 4-inch wafer-scale metal-insulator-metal capacitor, facilitating a 5.211-fold current amplification with the tip-induced electrical field. In conclusion, tip-induced optoelectrical engineering provides a novel strategy to comprehensively understand interfacial charge transfer dynamics and a non-destructive tunneling control platform that enables real-time and real-space investigation of ultrathin hybrid molecular systems.

Tailoring the Resistive Switching WORM Memory Behavior of Functionalized Bis(triphenylamine)

To better understand the structure-property relationship and the significance of the donor-acceptor (D-A) system in resistive memory devices, a series of new organic small molecules with A-π-D-π-A- and D-π-D-π-D-based architecture comprising a bis(triphenylamine) core unit and ethynyl-linked electron donor/acceptor arms were designed and synthesized. The devices with A-π-D-π-A structures exhibited write-once-read-many memory behavior with a good retention time of 1000 s while those based on D-π-D-π-D molecules presented only conductor property. The compound with nitrophenyl substitution resulted in a higher ON/OFF current ratio of 10⁴, and the fluorophenyl substitution exhibited the lowest threshold voltage of -1.19 V. Solubility of the compounds in common organic solvents suggests that they are promising candidates for economic solution-processable techniques. Density functional theory calculations were used to envision the frontier molecular orbitals and to support the proposed resistive switching mechanisms. It is inferred that the presence of donor/acceptor substituents has a significant impact on the highest occupied molecular orbital-lowest unoccupied molecular orbital energy levels of the molecules, which affects their memory-switching behavior and thus suggests that a D-A architecture is ideal for memory device resistance switching characteristics.

Switching the memory behaviour from binary to ternary by triggering S62- relaxation in polysulfide-bearing zinc-organic complex molecular memories

The use of crystalline metal-organic complexes with definite structures as multilevel memories can enable explicit structure-property correlations, which is significant for designing the next generation of memories. Here, four Zn-polysulfide complexes with different degrees of conjugation have been fabricated as memory devices. ZnS₆(L)₂-based memories (L = pyridine and 3-methylpyridine) can exhibit only bipolar binary memory performances, but ZnS₆(L)-based memories (L = 2,2'-bipyridine and 1,10-phenanthroline) illustrate non-volatile ternary memory performances with high ON2/ON1/OFF ratios (10^4.22/10^2.27/1 and 10^4.85/10^2.58/1) and ternary yields (74% and 78%). Their ON1 states stem from the packing adjustments of organic ligands upon the injection of carriers, and the ON2 states are a result of the ring-to-chain relaxation of S₆^2- anions. The lower conjugated degrees in ZnS₆(L)₂ result in less compact packing; consequently, the adjacent S₆^2- rings are too long to trigger the S₆^2- relaxation. The deep structure-property correlation in this work provides a new strategy for implementing multilevel memory by triggering polysulfide relaxation based on the conjugated degree regulation of organic ligands.

Simultaneously elevating the resistive switching level and ambient-air-stability of 3D perovskite (TAZ-H)PbBr3-based memory device by encapsulating into polyvinylpyrrolidone

The study about simultaneously enhancing the resistive switching level and ambient-air-stability of perovskite-based memorizers will promote its commercialization. Here, a new 3D perovskite (TAZ-H)PbBr₃ (TAZ-H⁺ = protonated thiazole) has been fabricated as FTO/(TAZ-H)PbBr₃/Ag device, which only exhibits binary memory performance with the high tolerant temperature of 170 °C. After encapsulating by polyvinylpyrrolidone (PVP), the (TAZ-H)PbBr₃@PVP composite-based device can demonstrate ternary resistive switching behavior with considerable ON2/ON1/OFF ratio (10^5.9: 10^3.9:1) and high ternary yield (68 %). Specially, this device presents good ambient-air stability at RH 80 % and thermal tolerance of 100 °C. The binary resistive switching mechanism can be ascribed to the halogen ion migration induced by bromine defects in the (PbBr₃)_n^n- framework. But the ternary resistive switching phenomenon in the (TAZ-H)PbBr₃@PVP-based device could be depicted as the carrier transport from filled traps of PVP to (PbBr₃)_n^n- framework (ON1 state) and then carriers flowing in the re-arranged (TAZ-H)_nⁿ⁺ chain in 3D channels (ON2 state). The PVP treatment can not only modify the grain boundary defects, but also facilitate the transport of injected carriers to the perovskite films via Pb-O coordinated bonds and inhibition of order-disorder transformation. This facial strategy for implementing ternary perovskite-based memorizers with good ambient-air-stability is quite meaningful for high-density memory in harsh environments.

High-Performance Flexible Polymer Memristor Based on Stable Filamentary Switching

Polymer-based atomic switch memristors via the formation/dissolution of atomic-scale conductive filaments are considered as the leading candidate for next-generation nonvolatile memory. However, the instability of conductive filaments of incomplete bridge makes their switching performances unsatisfied. In this work, we report a flexible polymeric memristor using polyethylenimine incorporated with silver salt. The memristor device exhibited superior performances at room temperature with a favorable endurance, high ON/OFF ratio, good retention, and low operating voltage. These satisfactory performances are attributed to the pre-existing Ag ions in the polymer, guiding the formation of a robust Ag filament. In addition, the device shows stable bipolar switching behavior in bending conditions or after hundreds of bending cycles. In our work, we provide a simple and efficient method to construct robust filament-based memristors for flexible electronics.

Metal-containing organic compounds for memory and data storage applications

With the upcoming trend of Big Data era, some new types of memory technologies have emerged as substitutes for the traditional Si-based semiconductor memory devices, which are encountering severe scaling down technical obstacles. In particular, the resistance random access memory (RRAM) and magnetic random access memory (MRAM) hold great promise for the in-memory computing, which are regarded as the optimal strategy and pathway to solve the von Neumann bottleneck by high-throughput in situ data processing. As far as the active materials in RRAM and MRAM are concerned, organic semiconducting materials have shown increasing application perspectives in memory devices due to their rich structural diversity and solution processability. With the introduction of metal elements into the backbone of molecules, some new properties and phenomena will emerge accordingly. Consequently, the RRAM and MRAM devices based on metal-containing organic compounds (including the small molecular metal complexes, metallopolymers, metal-organic frameworks (MOFs) and organic-inorganic-hybrid perovskites (OIHPs)) have been widely explored and attracted intense attention. In this review, we highlight the fundamentals of RRAM and MRAM, as well as the research progress of the applications of metal-containing organic compounds in both RRAM and MRAM. Finally, we discuss the challenges and future directions for the research of organic RRAM and MRAM.

Nanofiber Architecture Engineering Implemented by Electrophoretic-Induced Self-Assembly Deposition Technology for Flash-Type Memristors

Electrophoretic deposition (EPD) has been recognized as a promising large-scale film preparation technology for industrial application. Inspired by the conventional EPD method and the crystal diffusion growth strategy, we propose a modified electrophoretic-induced self-assembly deposition (EPAD) technique to control the morphologies of organic functional materials. Here, an ionic-type dye with a conjugated skeleton and strong noncovalent interactions, celestine blue (CB), is chosen as a module molecule for EPAD investigation. As expected, CB molecules can assemble into different nanostructures, dominated by applied voltage, concentration effect, and duration. Compared to a nanopillar layered packing structure formed by the traditional spin-coating method, the EPAD approach can produce a nanofiber structure under a fixed condition of 10 V/10 min. Intriguingly, a memristor device based on a pillar-like nanostructure exhibits WORM-type behavior, while a device based on nanofibers presents Flash memory performance. The assemble process and the memory mechanism are uncovered by molecular dynamics simulations and density-functional theory (DFT) calculations. This work endows the typical EPD technique with a fresh application scenario, where an in-depth study on the growth mechanism of nanofibers and the positive effect of unique morphologies on memristor performance are offered.

Cyclometalated Platinum(II) Complexes with Donor-Acceptor-Containing Bidentate Ligands and Their Application Studies as Organic Resistive Memories

A series of heteroleptic cyclometalated platinum(II) complexes, [Pt(C^N)(O^O)], (1-10) with various donors and acceptors has been synthesized and characterized by ¹ H NMR spectroscopy, elemental analyses, infrared spectroscopy and mass spectrometry. The X-ray structure of 2 has also been determined. The electrochemical and photophysical properties of the platinum(II) complexes were studied. These experimental results have been supported by computational studies. Furthermore, two of the complexes have been employed as the active material in the fabrication of resistive memory devices, exhibiting stable binary memory performance with low operating voltage, high ON/OFF ratio and long retention time.

Embedding Azobenzol-Decorated Tetraphenylethylene into the Polymer Matrix to Implement a Ternary Memory Device with High Working Temperature/Humidity

The development of new high-density memories that can work in harsh environments such as high temperature and humidity will be significant for some special occasions such as oil and geothermal industries. Herein, a facial strategy for implementing a ternary memory device with high working temperature/humidity was executed. In detail, an asymmetric aggregation-induced-emission active molecule (azobenzol-decorated tetraphenylethylene, i.e., TPE-Azo) was embedded into flexible poly(ethylene-alt-maleic anhydride) (PEM) to prepare a TPE-Azo@PEM composite, which served as an active layer to fabricate the FTO/TPE-Azo@PEM/Ag device. This device can demonstrate excellent ternary memory performances with a current ratio of 1:10^4.2:10^1.6 for "OFF", "ON1", and "ON2" states. Specially, it can exhibit good environmental endurance at high working temperature (350 °C) and humidity (RH = 90%). The ternary memory mechanism can be explained as the combination of aggregation-induced current/conductance and conformational change-induced charge transfer in the TPE-Azo molecule, which was verified by Kelvin probe force microscopy, UV-vis spectra, X-ray diffraction, and single-crystal structural analysis. This strategy can be used as a universal method for the construction of high-density multilevel memristors with good environmental tolerance.

Towards High-Performance Resistive Switching Behavior through Embedding a D-A System into 2D Imine-Linked Covalent Organic Frameworks

Developing new materials for the fabrication of resistive random-access memory is of great significance in this period of big data. Herein, we present a novel design strategy of embedding donor (D) and acceptor (A) fragments into imine-linked frameworks to construct resistive switching covalent organic frameworks (COFs) for high-performance memristors. Two D-A-type two-dimensional COFs, COF-BT-TT and COF-TT-TVT, were designed and synthesized using a conventional solvothermal approach, and high-quality thin films of these materials deposited on ITO substrate exhibited great potential as an active layer for memristors. Rewritable memristors based on 100 nm thick COF-TT-BT and COF-TT-TVT films showed a high ON/OFF current ratio (ca. 10⁵ and 10⁴ ) and low driving voltage (1.30 and 1.60 V). The cycle period and retention time for COF-TT-BT-based rewritable devices were as high as 319 cycles and 3.3×10⁴  s at a constant voltage of 0.1 V (160 cycles and 1.2×10⁴  s for the COF-TT-TVT memristor).

Phosphorescent Soft Salt Based on Platinum(II) Complexes: Photophysics, Self-Assembly, Thermochromism, and Anti-counterfeiting Application

A new platinum(II) complex-based soft salt S1, ([Pt(tpp)(ed)]⁺[Pt(pba) (CN)₂]^-) (tpp = 2-(4-(trifluoromethyl)phenyl)pyridine, ed = ethane-1,2-diamine, pba = 4-(2-pyridyl)benzaldehyde), was designed and synthesized. UV-visible absorption and photoluminescence (PL) spectra were studied to elucidate the nature of ground and excited states. The soft salt complex was found to show self-assembly properties with the assistance of electrostatic, π-π stacking, and Pt···Pt interactions, resulting in the remarkable emergence of low-energy absorption and PL bands. Morphological transformation of S1 from undefined nanosized aggregates to nanofibers with different solvent compositions has been demonstrated. Interestingly, a luminescent polymer film was prepared by doping S1 into a polyethylene glycol matrix. The film displayed distinctive emission color change from yellow to red upon heating. Eventually, a high-level anti-counterfeiting application was accomplished using a time-resolved imaging technique based on the thermochromic luminescence property and long emission decay time displayed by S1. It is anticipated that this work can provide deep insights into the control of intermolecular interactions between cationic and anionic complexes of soft salt upon exposure to different external stimuli, resulting in the development of smart luminescent materials for various applications.

Synaptic transistors and neuromorphic systems based on carbon nano-materials

Carbon-based materials possessing a nanometer size and unique electrical properties perfectly address the two critical issues of transistors, the low power consumption and scalability, and are considered as a promising material in next-generation synaptic devices. In this review, carbon-based synaptic transistors were systematically summarized. In the carbon nanotube section, the synthesis of carbon nanotubes, purification of carbon nanotubes, the effect of architecture on the device performance and related carbon nanotube-based devices for neuromorphic computing were discussed. In the graphene section, the synthesis of graphene and its derivative, as well as graphene-based devices for neuromorphic computing, was systematically studied. Finally, the current challenges for carbon-based synaptic transistors were discussed.

Naphthalimide-Based Hydrazone Derivatives: Synthesis, Mechanochromism in the Solid State and Response to Ions in Dilute Solutions

Molecules showing mechanochromic luminescence (MCL) are promising for use in the in the fields of sensing and probes. We report the design and synthesis of new naphthalimide-based hydrazone derivatives, NI-TPE and NI-3BA. Both the luminogens are weakly emissive with ^s Φ_f =0.3 % and 0.5 % respectively when aggregated in amorphous states as strong π-π stacking and intermolecular interaction prevent luminescence. On the contrary, in the crystalline state, single crystal analysis of two derivatives shows that nonradiative decay is reduced or inhibited by molecular stacking modes and intermolecular interactions. Increases of fluorescence emission intensity to ^s Φ_f =5.5 % and 6.0 % upon solvent evaporation are attributed to weak π-π overlapping and hydrogen bonding (N-H ⋅⋅⋅ O, distance 2.99 Å), which are beneficial to the formation of molecules with a loose packing. At the same time, the packing modes that the two derivatives adopt in the crystal lattice are destroyed to result in a low solid-state fluorescence quantum yield and a bathochromic shift of 23-25 nm upon grinding. All these factors cause the two derivatives show an unusual "turn off" MCL phenomenon. The fluorescence emission, its pH reversibility, and selective response to fluoride and acetate ions of up to 91-93 % in dilute solutions were also demonstrated.

Utilization of conformation change and charge trapping to achieve binary/ternary rewritable memory performance of carbazole-based organic molecules

To better understand the relationship between the molecular structure and memory characteristics, two carbazole-based organic compounds (Cz-2Ph3F 6FDA and Cz-2TPA 6FDA) with different ratios of electron-donating and electron-withdrawing units were designed and synthesized.

Recent advances in optical and optoelectronic data storage based on luminescent nanomaterials

The substantial amount of data generated every second in the big data age creates a pressing requirement for new and advanced data storage techniques. Luminescent nanomaterials (LNMs) not only possess the same optical properties as their bulk materials but also have unique electronic and mechanical characteristics due to the strong constraints of photons and electrons at the nanoscale, enabling the development of revolutionary methods for data storage with superhigh storage capacity, ultra-long working lifetime, and ultra-low power consumption. In this review, we investigate the latest achievements in LNMs for constructing next-generation data storage systems, with a focus on optical data storage and optoelectronic data storage. We summarize the LNMs used in data storage, namely upconversion nanomaterials, long persistence luminescent nanomaterials, and downconversion nanomaterials, and their applications in optical data storage and optoelectronic data storage. We conclude by discussing the superiority of the two types of data storage and survey the prospects for the field.

Complementary amide-based donor-acceptor with unique nano-scale aggregation, fluorescence, and band gap-lowering properties: a WORM memory device

Organic fluorescent semiconducting nanomaterials have gained widespread research interest owing to their potential applications in the arena of high-tech devices. We designed two pyrazaacene-based compounds, their stacked system, and the role of gluing interactions to fabricate nanomaterials, and determined the prospective band gaps utilizing the density functional theory calculation. The two pyrazaacene derivatives containing complementary amide linkages (-CONH and -NHCO) were efficiently synthesized. The synthesized compounds are highly soluble in common organic solvents as well as highly fluorescent and photostable. The heterocycles and their mixture displayed efficient solvent dependent fluorescence in the visible region of the solar spectrum. Notably, the compounds were associated through complementary NH•••O = C type hydrogen bonding, π-π stacking, and hydrophobic interactions, and thereby afforded nanomaterials with a low band gap. Fascinatingly, the fabricated stacked nanomaterial system exhibited resistive switching behavior, leading to the fabrication of an efficient write-once-read-many-times memory device of crossbar structure.

Effect of functional groups on microporous polymer based resistance switching memory devices

Here, two large-area microporous polymer (MP) films with different substituents were synthesized at the solution/air interface.

Rational Modification of Small Molecules with High Device Reproducibility Induced by Improved Interfacial Contact through Intermolecular Hydrogen Bonds

The interfacial contact between the semiconductor and the electrode can effectively affect the device performance through the penetration of metal atoms in semiconductors from the grain boundaries. Thus, how to design a novel molecule with few grain boundaries, namely, large grain size, in solid state is an important task to achieve excellent memory device with high reproducibility. Intermolecular hydrogen-bonding interaction has been proved to be a powerful driving force for molecules assembling into large crystalline aggregates. In this work, the molecular terminals with different numbers of electron-deficient imine (C═N) nitrogen atoms are designed to investigate the effect of hydrogen-bonding interaction on molecular crystalline grains and interfacial contact. X-ray diffraction and grazing-incidence small-angle X-ray scattering measurements verified the superior molecular aggregates and grain boundaries of the molecule with two hydrogen-bonding sites in solid state, donating the corresponding devices showing optimized ternary data-storage performance with lower threshold voltages and higher device reproducibility.

Redox gated polymer memristive processing memory unit

Memristors with enormous storage capacity and superior processing efficiency are of critical importance to overcome the Moore’s Law limitation and von Neumann bottleneck problems in the big data and artificial intelligence era. In particular, the integration of multifunctionalities into a single memristor promises an essential strategy of obtaining a high-performance electronic device that satisfies the nowadays increasing demands of data storage and processing. In this contribution, we report a proof-of-concept polymer memristive processing-memory unit that demonstrates programmable information storage and processing capabilities. By introducing redox active moieties of triphenylamine and ferrocene onto the pendants of fluorene skeletons, the conjugated polymer exhibits triple oxidation behavior and interesting memristive switching characteristics. Associated with the unique electrochemical and electrical behavior, the polymer device is capable of executing multilevel memory, decimal arithmetic operations of addition, subtraction, multiplication and division, as well as simple Boolean logic operations.

Though designing conductive polymers for memory devices is attractive for future low-cost flexible electronics, a proof-of-concept device has yet to be realized. Here, the authors report a redox-gated polymer memristive processing unit with programmable multilevel storage and logic functionalities.

Organic and hybrid resistive switching materials and devices

This review presents a timely and comprehensive summary of organic and hybrid materials for nonvolatile resistive switching memory applications in the “More than Moore” era, with particular attention on their designing principles for electronic property tuning and flexible memory performance.

Switching of Resistive Memory Behavior from Binary to Ternary Logic via Alteration of Substituent Positioning on the Subphthalocyanine Core

Two new axially or peripherally functionalized subphthalocyanines with the decoration of donor-acceptor substituents have been successfully synthesized, characterized and employed in the application of resistive memory device via solution-processable technique. Axially substituted subphthalocyanine shows ternary resistive memory behavior with well-separated current ratios of 1:10⁶:10⁸ between "OFF", "ON1" and "ON2" states, while only binary logic is observed for peripherally substituted subphthalocyanine. Computational studies show the presence of two well-separated charge transfer states in the axially substituted subphthalocyanine, while the charge transfer processes between the peripheral substituents and the subphthalocyanine core are found to be very close in energy. This work has demonstrated the impact of the substituent positioning on the subphthalocyanine-based memory device performance, providing a new research dimension for the future design and development of multistate organic resistive memory.

Fluorine-Induced Highly Reproducible Resistive Switching Performance: Facile Morphology Control through the Transition between J- and H-Aggregation

Improving the reproducibility and air-endurance of organic resistance switching (RS) devices, in particular multilevel-cell RS devices, is critical for the confirmation of its competency to realize big data storage capability. However, such enhancement still remains challenging. In this report, we demonstrated that fluorine (F)-embedding should be an effective way to enhance the overall performance of RS devices. Four new azo-cored analogues (IDAZO, FIDAZO, F₂IDAZO, and F₄IDAZO) have been designed and synthesized. These four compounds have similar structures with different numbers of F substituents. Interestingly, UV-vis measurements reveal that upon F-embedding, an exceptional transition from molecular J-aggregation to H-aggregation is achieved. As a result, the morphology of RS films becomes more and more uniform, as determined by AFM and XRD. Meanwhile, the hydrophobicity of RS film is promoted, which further improves the device atmospheric stability. The total RS reproducibility increases to 96% (the uppermost value), and the tristage RS reproducibility rises to 64%, accompanied by a more stable OFF state and lower logic SET voltages. Our study suggests F-embedding would be a promising strategy to achieve highly reproducible and air-endurable organic multilevel-cell RS devices.

Organic bistable memory devices based on MoO3 nanoparticle embedded Alq3 structures

Organic bistable memory devices were fabricated by embedding a thin layer of molybdenum trioxide (MoO₃) between two tris-(8-hydroxyquinoline)aluminum (Alq₃) layers. The device exhibited excellent switching characteristics with an ON/OFF current ratio of 1.15 × 10³ at a read voltage of 1 V. The device showed repeatable write-erase capability and good stability in both the conductance states. These conductance states are non-volatile in nature and can be obtained by applying appropriate voltage pulses. The effect of MoO₃ layer thickness and its location in the Alq₃ matrix on characteristics of the memory device was investigated. The field emission scanning electron microscopy (FE-SEM) images of the MoO₃ layer revealed the presence of isolated nanoparticles. Based on the experimental results, a mechanism has been proposed for explaining the conductance switching of fabricated devices.

The Application of a Small-Molecule-Based Ternary Memory Device in Transient Thermal-Probing Electronics

A small-molecule-based ternary memory device is used in transient thermal-probing electronics. The PYAE-based memory device is featured with three electrical transition signals ("0," "1," and "2"), while the heated PYAE-based device is only characterized by two electrical transition signals ("1" and "2"). The organic layer of the used devices can be recovered and reused.

Triindole-Tris-Alkynyl-Bridged Trinuclear Gold(I) Complexes for Cooperative Supramolecular Self-Assembly and Small-Molecule Solution-Processable Resistive Memories

A novel class of luminescent trinuclear alkynylgold(I) complexes with N-alkyl substituted triindole ligands has been synthesized and characterized. They are found to exhibit rich photophysical and electrochemical properties. The complexes have been demonstrated to display interesting supramolecular assembly with spherical nanostructures in aqueous THF solution through a cooperative growth mechanism. The self-assembly process is shown to be mediated by the π-π stacking interactions and hydrophobic-hydrophobic interactions of the triindole moieties upon solvent modulation. These gold(I) complexes have been employed as active materials in the fabrication of solution-processable resistive memory devices, showing promising binary memory performances with low switching threshold voltages of ca. 1.5 V, high ON/OFF current ratio of up to 10⁵, long retention time of over 10⁴ s, and excellent stability. The present work opens up a new avenue for the future design of versatile organogold(I) complexes that could serve as multifunctional materials.

Main chain copolysiloxanes with terthiophene and perylenediimide units: synthesis, characterization and electrical memory

A main chain donor–acceptor copolysiloxane PBIClSi-alt-PTSi for resistor type memory has been designed and synthesized. The PBIClSi-alt-PTSi possesses high thermal stability and shows nonvolatile write-once-read many times (WORM) memory characteristics.

Nonvolatile Bipolar Resistive Switching Behavior in the Perovskite-like (CH3NH3)2FeCl4

The bipolar resistive switching behavior in a device based on an crystalline iron-based organic-inorganic, perovskite-like material of (CH3NH3)2FeCl4 (MAFC), was examined and studied. Both high and low resistance states appeared to have no obvious degradation during a measurement period of 600 s with 400 cycles in a Ag/MAFC/Cu device, which also exhibited good thermal stability over a wide temperature range of 290 to 340 K. The conductivity-state switching behavior was derived from the competition between the ionic current within the MAFC and the Faradaic current that originated from oxidative reactions at the Ag/MAFC/Cu interface. A model explaining the oxidative reaction process was established to describe the symmetric resistive switching behavior in the Ag/MAFC/Cu cell. With an applied bias voltage sweeping, the oxidative layers passivated and dissipated at the Ag/MAFC/Cu interface that resulted in the competition between the induced current and the ionic current, and thus caused a symmetric resistance change. On the basis of this interfacial effect, the MAFC crystals can be used as memristor elements in devices for write-read-erase-rewrite process.

SiC7 siligraphene: a novel donor material with extraordinary sunlight absorption

The SiC7 siligraphene (g-SiC7) is a novel 2D nanomaterial with a graphene-like structure. Based on theoretical calculations, we have systematically investigated the structure, stability, electronic and optical properties of g-SiC7 siligraphene. The calculated results reveal that g-SiC7 siligraphene is a semiconductor with a direct band gap of 1.13 eV, which can be easily tuned by applying biaxial strain or a perpendicular electric field. Such a g-SiC7 siligraphene shows superior sunlight optical absorbance and is better than g-SiC2 siligraphene and single-layer black phosphorus (phosphorene) in near infrared and visible photon ranges, thus holding great potential for photovoltaics applications as a light donor material.

Improving Memory Performances by Adjusting the Symmetry and Polarity of O-Fluoroazobenzene-Based Molecules

Three O-fluoroazobenzene-based molecules were chosen as memory-active molecules: FAZO-1 with a D-A2-D symmetric structure, FAZO-2 with an A1-A2-A1 symmetric structure, and FAZO-3 with a D-A2-A1 asymmetric structure. Both FAZO-1 and FAZO-2 had a lower molecular polarity, whereas FAZO-3 had a higher polarity. The fabricated indium-tin oxide (ITO)/FAZO-1/Al (Au) and ITO/FAZO-2/Al (Au) memory devices both exhibited volatile static random access memory (SRAM) behavior, whereas the ITO/FAZO-3/Al (Au) device showed nonvolatile ternary write-once-read-many-times (WORM) behavior. It should be noted that the reproducibility of these devices was considerably high, which is significant for practical application in memory devices. In addition, the different memory performances of the three active materials were determined to be attributable to the stability of electric-field-induced charge-transfer complexes. Therefore, the switching memory behavior could be tuned by adjusting the molecular polarity.