Unveiling the Switching Riddle of Silver Tetracyanoquinodimethane Towards Novel Planar Single-Crystalline Electrochemical Metallization Memories

Harnessing Radiation for Nanotechnology: A Comprehensive Review of Techniques, Innovations, and Application

Nanomaterial properties such as size, structure, and composition can be controlled by manipulating radiation, such as gamma rays, X-rays, and electron beams. This control allows scientists to create materials with desired properties that can be used in a wide range of applications, from electronics to medicine. This use of radiation for nanotechnology is revolutionizing the way we design and manufacture materials. Additionally, radiation-induced nanomaterials are more cost effective and energy efficient. This technology is also having a positive impact on the environment, as materials are being produced with fewer emissions, less energy, and less waste. This cutting-edge technology is opening up new possibilities and has become an attractive option for many industries, from medical advancements to energy storage. It is also helping to make the world a better place by reducing our carbon footprint and preserving natural resources. This review aims to meticulously point out the synthesis approach and highlights significant progress in generating radiation-induced nanomaterials with tunable and complex morphologies. This comprehensive review article is essential for researchers to design innovative materials for advancements in health care, electronics, energy storage, and environmental remediation.

Copper Tetracyanoquinodimethane: From Micro/Nanostructures to Applications

Copper tetracyanoquinodimethane (CuTCNQ) has been investigated around 40 years as a representative bistable material. Meanwhile, micro/nanostructures of CuTCNQ is considered as the prototype of molecular electronics, which have attracted the world's attention and shown great potential applications in nanoelectronics. In this review, methods for synthesis of CuTCNQ micro/nanostructures are first summarized briefly. Then, the strategies for controlling morphologies and sizes of CuTCNQ micro/nanostructures are highlighted. Afterwards, the devices based on these micro/nanostructures are reviewed. Finally, an outlook of future research directions and challenges in this area is presented.

Highly Robust Organometallic Small-Molecule-Based Nonvolatile Resistive Memory Controlled by a Redox-Gated Switching Mechanism

Although organic small-molecule-based memory devices (OSMDs) have been demonstrated to show great potential for the application in next-generation data-storage technology, progress toward their further development has been hugely hindered by the ambiguity of their electrical switching mechanism. Thus, purposely fabricating OSMDs with a definite switching behavior is very urgent. Here, we reported a redox-gated nonvolatile rewritable memory device using an organometallic small molecule as an active material. By introducing the redox-active ferrocene into an organic skeleton, the target small molecule exhibits reliable and robust FLASH-type bistable electrical characteristics with a clear redox-controlled switching mechanism, which leads to low operational voltages, good endurance, and long retention. Our study offers a proof-of-concept strategy to design controllable OSMDs with excellent performances.

Organic crystalline materials in flexible electronics

Flexible electronics have attracted considerable attention recently given their potential to revolutionize human lives. High-performance organic crystalline materials (OCMs) are considered strong candidates for next-generation flexible electronics such as displays, image sensors, and artificial skin. They not only have great advantages in terms of flexibility, molecular diversity, low-cost, solution processability, and inherent compatibility with flexible substrates, but also show less grain boundaries with minimal defects, ensuring excellent and uniform electronic characteristics. Meanwhile, OCMs also serve as a powerful tool to probe the intrinsic electronic and mechanical properties of organics and reveal the flexible device physics for further guidance for flexible materials and device design. While the past decades have witnessed huge advances in OCM-based flexible electronics, this review is intended to provide a timely overview of this fascinating field. First, the crystal packing, charge transport, and assembly protocols of OCMs are introduced. State-of-the-art construction strategies for aligned/patterned OCM on/into flexible substrates are then discussed in detail. Following this, advanced OCM-based flexible devices and their potential applications are highlighted. Finally, future directions and opportunities for this field are proposed, in the hope of providing guidance for future research.

Low-Voltage Organic Single-Crystal Field-Effect Transistor with Steep Subthreshold Slope

Anodization is a promising technique to form high- k dielectrics for low-power organic field-effect transistor (OFET) applications. However, the surface quality of the dielectric, which is mainly inherited from the metal electrode, can be improved further than other fabrication techniques, such as sol-gel. In this study, we applied the template stripping method to fabricate a low-power single-crystalline OFET based on the anodized AlO _x dielectric. We found that the template stripping method largely improves the surface roughness of the deposited Al and allows for the formation of a high-quality AlO _x high- k dielectric by anodization. The ultraflat AlO _x/SAM dielectric combined with a single-crystal 2,6-diphenylanthracene (DPA) semiconductor produced a nearly defect-free interface with a steep subthreshold swing (SS) of 66 mV/decade. The current device is a promising candidate for future ultralow-power applications. Other than metal deposition, template stripping could provide a general approach to improve thin-film quality for many other types of materials and processes.

An Asymmetric Furan/Thieno[3,2-b]Thiophene Diketopyrrolopyrrole Building Block for Annealing-Free Green-Solvent Processable Organic Thin-Film Transistors

A new asymmetric furan and thieno[3,2-b]thiophene flanked diketopyrrolopyrrole (TTFDPP) building block for conjugated polymers is designed and used to generate a donor-acceptor semiconducting polymer, poly[3-(furan-2-yl)-2,5-bis(2-octyldodecyl)-6-(thieno[3,2-b]thiophen-2-yl)pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione-alt-thieno[3,2-b]thiophene] (abbreviated to PTTFDPP-TT), consisting of TTFDPP unit copolymerized with thieno[3,2-b]thiophene comonomer (TT), which is further synthesized. Results demonstrate that PTTFDPP-TT-based thin-film transistors in a bottom-gate bottom-contact device configuration exhibit typical hole-transporting property, with weak temperature dependence for charge carrier mobility from room temperature to 200 °C. In addition, the good solubility of PTTFDPP-TT due to the incorporation of a polar furan unit and an asymmetric conjugated structure makes it able to be solution processed with a less toxic nonchlorinated solvent such as toluene, demonstrating comparable performance with that prepared from chlorinated solution. These results suggest PTTFDPP-TT as a promising organic semiconductor candidate for annealing-free, environmentally benign, and less energy-consuming applications in large-area flexible organic electronic devices.

Molecular cocrystals: design, charge-transfer and optoelectronic functionality

This perspective article primarily focuses on the research work related to optoelectronic properties of organic charge transfer cocrystals.

Thermally Driven Resistive Switching in Solution-Processable Thin Films of Coordination Polymers

Metal-organic coordination polymers (CPs) downsized to thin films with controllable electrical conductivity are promising for electronic device applications. Here we demonstrate, for the first time, thermally driven resistive switching in thin films of semiconducting CPs consisting of silver ion and tetracyanoquinodimethane ligand (Ag-TCNQ). High-quality and highly hydrophobic thin films of Ag-TCNQ were fabricated through a layer-by-layer approach upon sacrificing a predeposited layer of Cu-TCNQ on a thiolated Au substrate. Reversible switching between the high-resistance state (HRS) at 300 K and the low-resistance state (LRS) at 400 K with an enhancement factor of as high as ∼10⁶ in the electrical resistance was realized. The phenomenon is attributed to the alternation of the Schottky barrier at the metal-semiconductor interface by thermal energy and not due to the formation of a conductive filament. Our discovery of thermally driven resistive switching as well as sacrificial growth of CP thin films on an organically modified substrate holds promise for the development of solution-processable nonvolatile memory devices.