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Wu G, Abid M, Zerara M, Cho J, Choi M, Ó Coileáin C, Hung KM, Chang CR, Shvets IV, Wu HC. Miniaturized spectrometer with intrinsic long-term image memory. Nat Commun 2024; 15:676. [PMID: 38263315 PMCID: PMC10805890 DOI: 10.1038/s41467-024-44884-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/16/2023] [Accepted: 01/09/2024] [Indexed: 01/25/2024] Open
Abstract
Miniaturized spectrometers have great potential for use in portable optoelectronics and wearable sensors. However, current strategies for miniaturization rely on von Neumann architectures, which separate the spectral sensing, storage, and processing modules spatially, resulting in high energy consumption and limited processing speeds due to the storage-wall problem. Here, we present a miniaturized spectrometer that utilizes a single SnS2/ReSe2 van der Waals heterostructure, providing photodetection, spectrum reconstruction, spectral imaging, long-term image memory, and signal processing capabilities. Interface trap states are found to induce a gate-tunable and wavelength-dependent photogating effect and a non-volatile optoelectronic memory effect. Our approach achieves a footprint of 19 μm, a bandwidth from 400 to 800 nm, a spectral resolution of 5 nm, and a > 104 s long-term image memory. Our single-detector computational spectrometer represents a path beyond von Neumann architectures.
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Affiliation(s)
- Gang Wu
- School of Physics, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Mohamed Abid
- School of Physics, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | | | - Jiung Cho
- Western Seoul Cente, Korea Basic Science Institute, Seoul, 03579, Republic of Korea
- Department of Advanced Materials Engineering, Chung-Ang University, 4726, Seodong-daero, Daedeok-myeon, Anseong-si, Gyeonggi-do, 17546, Republic of Korea
| | - Miri Choi
- Chuncheon Center, Korea Basic Science Institute, Chuncheon, 24341, Republic of Korea
| | - Cormac Ó Coileáin
- Institute of Physics, Faculty of Electrical Engineering and Information Technology, University of the Bundeswehr Munich, Neubiberg, 85577, Germany
| | - Kuan-Ming Hung
- Department of Electronics Engineering, National Kaohsiung University of Science and Technology, Kaohsiung, 807, Taiwan, ROC
| | - Ching-Ray Chang
- Quantum Information Center, Chung Yuan Christian University, Taoyuan, 32023, Taiwan, ROC
- Department of Physics, National Taiwan University, Taipei, 106, Taiwan, ROC
| | - Igor V Shvets
- School of Physics, Trinity College Dublin, Dublin, Dublin 2, Ireland
| | - Han-Chun Wu
- School of Physics, Beijing Institute of Technology, Beijing, 100081, P. R. China.
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2
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Zhan Y, Wu Z, Zeng P, Wang W, Jiang Y, Zheng H, Zheng P, Zheng L, Zhang Y. High-Performance Self-Powered WSe 2/ReS 2 Photodetector Enabled via Surface Charge Transfer Doping. ACS APPLIED MATERIALS & INTERFACES 2023; 15:55043-55054. [PMID: 37967170 DOI: 10.1021/acsami.3c10654] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/17/2023]
Abstract
Two-dimensional (2D) van der Waals heterostructures based on various 2D transition metal dichalcogenides are widely used in photodetection applications. However, their response time and photoresponsivity are limited, posing a challenge for their applications in high-sensitivity photodetection. Surface charge transfer doping (SCTD) has emerged as a novel doping approach for low-dimensional materials with high specific surface area and attracted considerable attention, as it is simple and effective, does not damage the lattice, and considers various types of dopants. Herein, we prepare p-i-n junction-based photodetectors via the SCTD of WSe2/ReS2 heterojunctions using p-type dopant F4-TCNQ molecules, where doped WSe2 serves as a p-type semiconductor, undoped WSe2 acts as an intrinsic layer, and ReS2 functions as an n-type semiconductor. The surface-charge-transfer-doped WSe2/ReS2 heterojunction leads to a reduction in the Schottky barrier and an increase in the built-in electric field compared with the as-fabricated heterojunction. In the photovoltaic mode and under 785 nm laser illumination, the photodiode exhibits an increase in responsivity from 0.08 to 0.29 A/W, specific detectivity from 1.89 × 1012 to 8.02 × 1012 Jones, and the external quantum efficiency from 12.67 to 46.29%. Additionally, the p-i-n structure expands the depletion region width, resulting in a photovoltaic response time of 7.56/6.48 μs and a -3 dB cutoff frequency of over 85 kHz, an order of magnitude faster than the pristine response time. Herein, we derive an effective and simple scheme for designing high-performance, low-power optoelectronic devices based on 2D van der Waals heterostructures.
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Affiliation(s)
- Yaxin Zhan
- Lab for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Zhangting Wu
- Lab for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Peiyu Zeng
- School of Physics, Southeast University, Nanjing 211189, China
| | - Wenhui Wang
- School of Physics, Southeast University, Nanjing 211189, China
| | - Yuan Jiang
- Lab for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Hui Zheng
- Lab for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Peng Zheng
- Lab for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Liang Zheng
- Lab for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Yang Zhang
- Lab for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, China
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3
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Ji J, Choi JH. Recent progress in 2D hybrid heterostructures from transition metal dichalcogenides and organic layers: properties and applications in energy and optoelectronics fields. NANOSCALE 2022; 14:10648-10689. [PMID: 35839069 DOI: 10.1039/d2nr01358d] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Atomically thin transition metal dichalcogenides (TMDs) present extraordinary optoelectronic, electrochemical, and mechanical properties that have not been accessible in bulk semiconducting materials. Recently, a new research field, 2D hybrid heteromaterials, has emerged upon integrating TMDs with molecular systems, including organic molecules, polymers, metal-organic frameworks, and carbonaceous materials, that can tailor the TMD properties and exploit synergetic effects. TMD-based hybrid heterostructures can meet the demands of future optoelectronics, including supporting flexible, transparent, and ultrathin devices, and energy-based applications, offering high energy and power densities with long cycle lives. To realize such applications, it is necessary to understand the interactions between the hybrid components and to develop strategies for exploiting the distinct benefits of each component. Here, we provide an overview of the current understanding of the new phenomena and mechanisms involved in TMD/organic hybrids and potential applications harnessing such valuable materials in an insightful way. We highlight recent discoveries relating to multicomponent hybrid materials. Finally, we conclude this review by discussing challenges related to hybrid heteromaterials and presenting future directions and opportunities in this research field.
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Affiliation(s)
- Jaehoon Ji
- School of Mechanical Engineering, Purdue University, West Lafayette, Indiana 47907, USA.
| | - Jong Hyun Choi
- School of Mechanical Engineering, Purdue University, West Lafayette, Indiana 47907, USA.
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4
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Enhanced Photodetection Range from Visible to Shortwave Infrared Light by ReSe2/MoTe2 van der Waals Heterostructure. NANOMATERIALS 2022; 12:nano12152664. [PMID: 35957096 PMCID: PMC9370303 DOI: 10.3390/nano12152664] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/05/2022] [Revised: 07/31/2022] [Accepted: 08/01/2022] [Indexed: 11/17/2022]
Abstract
Type II vertical heterojunction is a good solution for long-wavelength light detection. Here, we report a rhenium selenide/molybdenum telluride (n-ReSe2/p-MoTe2) photodetector for high-performance photodetection in the broadband spectral range of 405–2000 nm. Due to the low Schottky barrier contact of the ReSe2/MoTe2 heterojunction, the rectification ratio (RR) of ~102 at ±5 V is realized. Besides, the photodetector can obtain maximum responsivity (R = 1.05 A/W) and specific detectivity (D* = 6.66 × 1011 Jones) under the illumination of 655 nm incident light. When the incident wavelength is 1550–2000 nm, a photocurrent is generated due to the interlayer transition of carriers. This compact system can provide an opportunity to realize broadband infrared photodetection.
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5
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Malik M, Iqbal MA, Choi JR, Pham PV. 2D Materials for Efficient Photodetection: Overview, Mechanisms, Performance and UV-IR Range Applications. Front Chem 2022; 10:905404. [PMID: 35668828 PMCID: PMC9165695 DOI: 10.3389/fchem.2022.905404] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/27/2022] [Accepted: 04/15/2022] [Indexed: 11/25/2022] Open
Abstract
Two-dimensional (2D) materials have been widely used in photodetectors owing to their diverse advantages in device fabrication and manipulation, such as integration flexibility, availability of optical operation through an ultrabroad wavelength band, fulfilling of photonic demands at low cost, and applicability in photodetection with high-performance. Recently, transition metal dichalcogenides (TMDCs), black phosphorus (BP), III-V materials, heterostructure materials, and graphene have emerged at the forefront as intriguing basics for optoelectronic applications in the field of photodetection. The versatility of photonic systems composed of these materials enables their wide range of applications, including facilitation of chemical reactions, speeding-up of responses, and ultrasensitive light detection in the ultraviolet (UV), visible, mid-infrared (MIR), and far-infrared (FIR) ranges. This review provides an overview, evaluation, recent advancements as well as a description of the innovations of the past few years for state-of-the-art photodetectors based on two-dimensional materials in the wavelength range from UV to IR, and on the combinations of different two-dimensional crystals with other nanomaterials that are appealing for a variety of photonic applications. The device setup, materials synthesis, operating methods, and performance metrics for currently utilized photodetectors, along with device performance enhancement factors, are summarized.
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Affiliation(s)
- Maria Malik
- Centre of Excellence in Solid State Physics, University of the Punjab, Lahore, Pakistan
| | - Muhammad Aamir Iqbal
- School of Materials Science and Engineering, Zhejiang University, Hangzhou, China
| | | | - Phuong V Pham
- Hangzhou Global Scientific and Technological Innovation Center, School of Micro-Nano Electronics, Zhejiang University, Hangzhou, China
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6
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Precise and Prompt Analyte Detection via Ordered Orientation of Receptor in WSe2-Based Field Effect Transistor. NANOMATERIALS 2022; 12:nano12081305. [PMID: 35458016 PMCID: PMC9028725 DOI: 10.3390/nano12081305] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/08/2022] [Revised: 04/05/2022] [Accepted: 04/07/2022] [Indexed: 02/01/2023]
Abstract
Field-effect transistors (FET) composed of transition metal dichalcogenide (TMDC) materials have gained huge importance as biosensors due to their added advantage of high sensitivity and moderate bandgap. However, the true potential of these biosensors highly depends upon the quality of TMDC material, as well as the orientation of receptors on their surfaces. The uncontrolled orientation of receptors and screening issues due to crossing the Debye screening length while functionalizing TMDC materials is a big challenge in this field. To address these issues, we introduce a combination of high-quality monolayer WSe2 with our designed Pyrene-based receptor moiety for its ordered orientation onto the WSe2 FET biosensor. A monolayer WSe2 sheet is utilized to fabricate an ideal FET for biosensing applications, which is characterized via Raman spectroscopy, atomic force microscopy, and electrical prob station. Our construct can sensitively detect our target protein (streptavidin) with 1 pM limit of detection within a short span of 2 min, through a one-step functionalizing process. In addition to having this ultra-fast response and high sensitivity, our biosensor can be a reliable platform for point-of-care-based diagnosis.
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7
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The first-principles study on Mo-doped monolayer ReS 2. J Mol Model 2022; 28:93. [PMID: 35305175 DOI: 10.1007/s00894-022-05080-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/11/2022] [Accepted: 03/06/2022] [Indexed: 10/18/2022]
Abstract
Based on the first-principles calculations, the electronic structure and optical properties of the Mo-doped monolayer rhenium disulfide (ReS2) model are calculated, and the system stability, bond length, charge difference density, band structure, photoabsorption coefficient, system stability, and reflectivity are analyzed. The calculation results show that doping changes the structural stability of the system, which gradually decreases with an increasing concentration of doping. The calculation of band structure and density of states indicated that the band gap value of the system decreases continuously to 0 with increasing doping concentration, while the average charge population of atoms at doping sites keeps increasing with the better electron-losing ability of atoms. Compared with the intrinsic monolayer ReS2, the peak of systemic reflectivity at different doping concentrations has corresponding degrees of redshift in a certain wavelength range, as demonstrated by the optical properties.
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8
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Zhao Y, Gobbi M, Hueso LE, Samorì P. Molecular Approach to Engineer Two-Dimensional Devices for CMOS and beyond-CMOS Applications. Chem Rev 2021; 122:50-131. [PMID: 34816723 DOI: 10.1021/acs.chemrev.1c00497] [Citation(s) in RCA: 25] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/27/2022]
Abstract
Two-dimensional materials (2DMs) have attracted tremendous research interest over the last two decades. Their unique optical, electronic, thermal, and mechanical properties make 2DMs key building blocks for the fabrication of novel complementary metal-oxide-semiconductor (CMOS) and beyond-CMOS devices. Major advances in device functionality and performance have been made by the covalent or noncovalent functionalization of 2DMs with molecules: while the molecular coating of metal electrodes and dielectrics allows for more efficient charge injection and transport through the 2DMs, the combination of dynamic molecular systems, capable to respond to external stimuli, with 2DMs makes it possible to generate hybrid systems possessing new properties by realizing stimuli-responsive functional devices and thereby enabling functional diversification in More-than-Moore technologies. In this review, we first introduce emerging 2DMs, various classes of (macro)molecules, and molecular switches and discuss their relevant properties. We then turn to 2DM/molecule hybrid systems and the various physical and chemical strategies used to synthesize them. Next, we discuss the use of molecules and assemblies thereof to boost the performance of 2D transistors for CMOS applications and to impart diverse functionalities in beyond-CMOS devices. Finally, we present the challenges, opportunities, and long-term perspectives in this technologically promising field.
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Affiliation(s)
- Yuda Zhao
- University of Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, F-67000 Strasbourg, France.,School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, 310027 Hangzhou, People's Republic of China
| | - Marco Gobbi
- Centro de Fisica de Materiales (CSIC-UPV/EHU), Paseo Manuel de Lardizabal 5, E-20018 Donostia-San Sebastián, Spain.,CIC nanoGUNE, E-20018 Donostia-San Sebastian, Basque Country, Spain.,IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Spain
| | - Luis E Hueso
- CIC nanoGUNE, E-20018 Donostia-San Sebastian, Basque Country, Spain.,IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Spain
| | - Paolo Samorì
- University of Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, F-67000 Strasbourg, France
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9
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Aftab S, Samiya M, Hussain MS, Elahi E, Yousuf S, Ajmal HMS, Iqbal MW, Iqbal MZ. ReSe 2/metal interface for hydrogen gas sensing. J Colloid Interface Sci 2021; 603:511-517. [PMID: 34214725 DOI: 10.1016/j.jcis.2021.06.117] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/16/2021] [Revised: 06/18/2021] [Accepted: 06/20/2021] [Indexed: 11/27/2022]
Abstract
The Fermi level alignment between electrodes and two-dimensional (2D) materials is significant in characterizing sensors based on their reversibility, response time, sensitivity, and long-term stability. Here, we have demonstrated that the modulation of the Schottky barrier height between the interface of metal (Pd/Au) and multilayered ReSe2 nanoflakes caused the change in the transfer curve (Ids-Vbg) of FETs based devices and rectifying characteristics (Ids-Vds) of the Schottky diodes at various hydrogen concentrations at T = 22 °C, fluctuating from 50 to 350 ppm with a response (R%) from 669 to 1198%, respectively. Sensors based on a mono- or bilayer system did not exhibit sensitivity to hydrogen gas owing to metal electrodes diffused into materials. The value of the ideality factor of the Schottky diode-based sensor changed from 4 to 1.6 as the hydrogen concentration was changed from 50 to 900 ppm, while the relative response increased from 0 to 3.5 as the hydrogen concentration was increased from 0 to 900 ppm. This research can offer a real solution for developing cost-effective, faster, and room temperature sensors based on 2D materials.
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Affiliation(s)
- Sikandar Aftab
- Department of Engineering Science, Simon Fraser University, Burnaby, Canada.
| | - Ms Samiya
- Department of Environment and Energy, Sejong University, 209 Neungdong-ro, Gwangjin-gu, South Korea.
| | | | - Ehsan Elahi
- Department of Physics, Sejong University, South Korea.
| | - Saqlain Yousuf
- Deparment of Physics, Sungkyunkwan University, Suwon 440-746, South Korea.
| | | | - Muhammad Waqas Iqbal
- Department of Physics, Riphah International University, 14 Ali Road, Lahore, Pakistan.
| | - Muhammad Zahir Iqbal
- Nanotechnology Research Laboratory, Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi 23640, Khyber Pakhtunkhwa, Pakistan.
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10
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Seo SG, Ryu JH, Kim SY, Jeong J, Jin SH. Enhancement of Photodetective Properties on Multilayered MoS 2 Thin Film Transistors via Self-Assembled Poly-L-Lysine Treatment and Their Potential Application in Optical Sensors. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:1586. [PMID: 34204218 PMCID: PMC8234691 DOI: 10.3390/nano11061586] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/17/2021] [Revised: 06/07/2021] [Accepted: 06/10/2021] [Indexed: 01/04/2023]
Abstract
Photodetectors and display backplane transistors based on molybdenum disulfide (MoS2) have been regarded as promising topics. However, most studies have focused on the improvement in the performances of the MoS2 photodetector itself or emerging applications. In this study, to suggest a better insight into the photodetector performances of MoS2 thin film transistors (TFTs), as photosensors for possible integrated system, we performed a comparative study on the photoresponse of MoS2 and hydrogenated amorphous silicon (a-Si:H) TFTs. As a result, in the various wavelengths and optical power ranges, MoS2 TFTs exhibit 2~4 orders larger photo responsivities and detectivities. The overall quantitative comparison of photoresponse in single device and inverters confirms a much better performance by the MoS2 photodetectors. Furthermore, as a strategy to improve the field effect mobility and photoresponse of the MoS2 TFTs, molecular doping via poly-L-lysine (PLL) treatment was applied to the MoS2 TFTs. Transfer and output characteristics of the MoS2 TFTs clearly show improved photocurrent generation under a wide range of illuminations (740~365 nm). These results provide useful insights for considering MoS2 as a next-generation photodetector in flat panel displays and makes it more attractive due to the fact of its potential as a high-performance photodetector enabled by a novel doping technique.
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Affiliation(s)
| | | | | | | | - Sung Hun Jin
- Department of Electronic Engineering, Incheon National University, Incheon 22012, Korea; (S.G.S.); (J.H.R.); (S.Y.K.); (J.J.)
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11
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Afzal AM, Iqbal MZ, Dastgeer G, Ahmad AU, Park B. Highly Sensitive, Ultrafast, and Broadband Photo-Detecting Field-Effect Transistor with Transition-Metal Dichalcogenide van der Waals Heterostructures of MoTe 2 and PdSe 2. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2003713. [PMID: 34105276 PMCID: PMC8188193 DOI: 10.1002/advs.202003713] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/01/2020] [Revised: 02/10/2021] [Indexed: 05/11/2023]
Abstract
Recently, van der Waals heterostructures (vdWHs) based on transition-metal dichalcogenides (TMDs) have attracted significant attention owing to their superior capabilities and multiple functionalities. Herein, a novel vdWH field-effect transistor (FET) composed of molybdenum ditelluride (MoTe2 ) and palladium diselenide (PdSe2 ) is studied for highly sensitive photodetection performance in the broad visible and near-infrared (VNIR) region. A high rectification ratio of 6.3 × 105 is obtained, stemming from the sharp interface and low Schottky barriers of the MoTe2 /PdSe2 vdWHs. It is also successfully demonstrated that the vdWH FET exhibits highly sensitive photo-detecting abilities, such as noticeably high photoresponsivity (1.24 × 105 A W-1 ), specific detectivity (2.42 × 1014 Jones), and good external quantum efficiency (3.5 × 106 ), not only due to the intra-TMD band-to-band transition but also due to the inter-TMD charge transfer (CT) transition. Further, rapid rise (16.1 µs) and decay (31.1 µs) times are obtained under incident light with a wavelength of 2000 nm due to the CT transition, representing an outcome one order of magnitude faster than values currently in the literature. Such TMD-based vdWH FETs would improve the photo-gating characteristics and provide a platform for the realization of a highly sensitive photodetector in the broad VNIR region.
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Affiliation(s)
- Amir Muhammad Afzal
- Department of Electrical and Biological PhysicsKwangwoon UniversityWolgye‐DongSeoul01897South Korea
| | - Muhammad Zahir Iqbal
- Nanotechnology Research Laboratory, Faculty of Engineering SciencesGIK Institute of Engineering Sciences and TechnologyTopiKhyber Pakhtunkhwa23640Pakistan
| | - Ghulam Dastgeer
- School of PhysicsPeking UniversityBeijing100871China
- IBS Center for Integrated Nanostructure PhysicsSungkyunkwan UniversitySuwon16419South Korea
| | - Aqrab ul Ahmad
- School of Physics and School of MicroelectronicsDalian University of TechnologyDalian116000China
| | - Byoungchoo Park
- Department of Electrical and Biological PhysicsKwangwoon UniversityWolgye‐DongSeoul01897South Korea
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12
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Zhang L, Dong J, Ding F. Strategies, Status, and Challenges in Wafer Scale Single Crystalline Two-Dimensional Materials Synthesis. Chem Rev 2021; 121:6321-6372. [PMID: 34047544 DOI: 10.1021/acs.chemrev.0c01191] [Citation(s) in RCA: 53] [Impact Index Per Article: 17.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
Abstract
The successful exfoliation of graphene has given a tremendous boost to research on various two-dimensional (2D) materials in the last 15 years. Different from traditional thin films, a 2D material is composed of one to a few atomic layers. While atoms within a layer are chemically bonded, interactions between layers are generally weak van der Waals (vdW) interactions. Due to their particular dimensionality, 2D materials exhibit special electronic, magnetic, mechanical, and thermal properties, not found in their 3D counterparts, and therefore they have great potential in various applications, such as 2D materials-based devices. To fully realize their large-scale practical applications, especially in devices, wafer scale single crystalline (WSSC) 2D materials are indispensable. In this review, we present a detailed overview on strategies toward the synthesis of WSSC 2D materials while highlighting the recent progress on WSSC graphene, hexagonal boron nitride (hBN), and transition metal dichalcogenide (TMDC) synthesis. The challenges that need to be addressed in future studies have also been described. In general, there have been two distinct routes to synthesize WSSC 2D materials: (i) allowing only one nucleus on a wafer scale substrate to be formed and developed into a large single crystal and (ii) seamlessly stitching a large number of unidirectionally aligned 2D islands on a wafer scale substrate, which is generally single crystalline. Currently, the synthesis of WSSC graphene has been realized by both routes, and WSSC hBN and MoS2 have been synthesized by route (ii). On the other hand, the growth of other WSSC 2D materials and WSSC multilayer 2D materials still remains a big challenge. In the last section, we wrap up this review by summarizing the future challenges and opportunities in the synthesis of various WSSC 2D materials.
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Affiliation(s)
- Leining Zhang
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea.,School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, South Korea
| | - Jichen Dong
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea.,Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Feng Ding
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea.,School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, South Korea
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13
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Yoo H, Heo K, Ansari MHR, Cho S. Recent Advances in Electrical Doping of 2D Semiconductor Materials: Methods, Analyses, and Applications. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:832. [PMID: 33805062 PMCID: PMC8064109 DOI: 10.3390/nano11040832] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/20/2021] [Revised: 03/19/2021] [Accepted: 03/22/2021] [Indexed: 12/22/2022]
Abstract
Two-dimensional materials have garnered interest from the perspectives of physics, materials, and applied electronics owing to their outstanding physical and chemical properties. Advances in exfoliation and synthesis technologies have enabled preparation and electrical characterization of various atomically thin films of semiconductor transition metal dichalcogenides (TMDs). Their two-dimensional structures and electromagnetic spectra coupled to bandgaps in the visible region indicate their suitability for digital electronics and optoelectronics. To further expand the potential applications of these two-dimensional semiconductor materials, technologies capable of precisely controlling the electrical properties of the material are essential. Doping has been traditionally used to effectively change the electrical and electronic properties of materials through relatively simple processes. To change the electrical properties, substances that can donate or remove electrons are added. Doping of atomically thin two-dimensional semiconductor materials is similar to that used for silicon but has a slightly different mechanism. Three main methods with different characteristics and slightly different principles are generally used. This review presents an overview of various advanced doping techniques based on the substitutional, chemical, and charge transfer molecular doping strategies of graphene and TMDs, which are the representative 2D semiconductor materials.
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Affiliation(s)
- Hocheon Yoo
- Department of Electronic Engineering, Gachon University, 1342 Seongnamdaero, Sujeong-gu, Seongnam-si, Gyeonggi-do 13120, Korea; (H.Y.); (M.H.R.A.)
- Graduate School of IT Convergence Engineering, Gachon University, 1342 Seongnamdaero, Sujeong-gu, Seongnam-si, Gyeonggi-do 13120, Korea
| | - Keun Heo
- Department of Semiconductor Science & Technology, Jeonbuk National University, Jeonju-si, Jeollabuk-do 54896, Korea;
| | - Md. Hasan Raza Ansari
- Department of Electronic Engineering, Gachon University, 1342 Seongnamdaero, Sujeong-gu, Seongnam-si, Gyeonggi-do 13120, Korea; (H.Y.); (M.H.R.A.)
- Graduate School of IT Convergence Engineering, Gachon University, 1342 Seongnamdaero, Sujeong-gu, Seongnam-si, Gyeonggi-do 13120, Korea
| | - Seongjae Cho
- Department of Electronic Engineering, Gachon University, 1342 Seongnamdaero, Sujeong-gu, Seongnam-si, Gyeonggi-do 13120, Korea; (H.Y.); (M.H.R.A.)
- Graduate School of IT Convergence Engineering, Gachon University, 1342 Seongnamdaero, Sujeong-gu, Seongnam-si, Gyeonggi-do 13120, Korea
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14
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Li X, Chen C, Yang Y, Lei Z, Xu H. 2D Re-Based Transition Metal Chalcogenides: Progress, Challenges, and Opportunities. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:2002320. [PMID: 33304762 PMCID: PMC7709994 DOI: 10.1002/advs.202002320] [Citation(s) in RCA: 22] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/19/2020] [Revised: 08/22/2020] [Indexed: 05/16/2023]
Abstract
The rise of 2D transition-metal dichalcogenides (TMDs) materials has enormous implications for the scientific community and beyond. Among TMDs, ReX2 (X = S, Se) has attracted significant interest regarding its unusual 1T' structure and extraordinary properties in various fields during the past 7 years. For instance, ReX2 possesses large bandgaps (ReSe2: 1.3 eV, ReS2: 1.6 eV), distinctive interlayer decoupling, and strong anisotropic properties, which endow more degree of freedom for constructing novel optoelectronic, logic circuit, and sensor devices. Moreover, facile ion intercalation, abundant active sites, together with stable 1T' structure enable them great perspective to fabricate high-performance catalysts and advanced energy storage devices. In this review, the structural features, fundamental physicochemical properties, as well as all existing applications of Re-based TMDs materials are comprehensively introduced. Especially, the emerging synthesis strategies are critically analyzed and pay particular attention is paid to its growth mechanism with probing the assembly process of domain architectures. Finally, current challenges and future opportunities regarding the controlled preparation methods, property, and application exploration of Re-based TMDs are discussed.
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Affiliation(s)
- Xiaobo Li
- Key Laboratory of Applied Surface and Colloid ChemistryMinistry of EducationShaanxi Key Laboratory for Advanced Energy DevicesSchool of Materials Science and EngineeringShaanxi Normal UniversityXi'an710119P. R. China
| | - Chao Chen
- Key Laboratory of Applied Surface and Colloid ChemistryMinistry of EducationShaanxi Key Laboratory for Advanced Energy DevicesSchool of Materials Science and EngineeringShaanxi Normal UniversityXi'an710119P. R. China
| | - Yang Yang
- Key Laboratory of Applied Surface and Colloid ChemistryMinistry of EducationShaanxi Key Laboratory for Advanced Energy DevicesSchool of Materials Science and EngineeringShaanxi Normal UniversityXi'an710119P. R. China
| | - Zhibin Lei
- Key Laboratory of Applied Surface and Colloid ChemistryMinistry of EducationShaanxi Key Laboratory for Advanced Energy DevicesSchool of Materials Science and EngineeringShaanxi Normal UniversityXi'an710119P. R. China
| | - Hua Xu
- Key Laboratory of Applied Surface and Colloid ChemistryMinistry of EducationShaanxi Key Laboratory for Advanced Energy DevicesSchool of Materials Science and EngineeringShaanxi Normal UniversityXi'an710119P. R. China
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15
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Zeng J, Niu Y, Gong Y, Wang Q, Li H, Umar A, de Rooij NF, Zhou G, Wang Y. All-Dry Transferred ReS 2 Nanosheets for Ultrasensitive Room-Temperature NO 2 Sensing under Visible Light Illumination. ACS Sens 2020; 5:3172-3181. [PMID: 32964714 DOI: 10.1021/acssensors.0c01372] [Citation(s) in RCA: 21] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/01/2023]
Abstract
For gas sensing applications, most of the reported two-dimensional (2D) materials are suffering from relatively low sensitivity and high limit of detection (LOD) at room temperature. In this work, we selected rhenium disulfide (ReS2) nanosheets to fabricate ReS2 transistor-based gas sensors (RTGSs) with ultrahigh sensitivity and low LOD toward nitrogen dioxide (NO2). The ReS2 nanosheets with different thicknesses were prepared via mechanical exfoliation and all-dry transfer method. Under 405 nm light illumination at room temperature (25 °C), the fabricated gas sensors showed a significant enhancement of the response with full reversibility toward ppb level NO2 (response of 9.07 at 500 ppb, a LOD of 50 ppb). In particular, the total response and recovery time of the RTGS was revealed to be less than 4 minutes (55 and 180 s, respectively), which is one of the top three shortest response and recovery times toward ppb level NO2 of the reported 2D material-based room-temperature gas sensors so far. Via Raman spectrometry, Kelvin probe force microscopy (KPFM), and X-ray photoelectron spectrometry (XPS), the structure and gas sensing mechanism of the materials were systematically investigated. It was confirmed that the electrons transfer from the ReS2 surface to NO2 molecules, inducing the hole doping of ReS2, which consequently increased the sensor resistance. Moreover, the concentration of the photogenerated carriers in ReS2 would accordingly be promoted by light illumination, which accounts for the substantial light enhancement of the gas sensing performance of RTGSs.
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Affiliation(s)
- Junwei Zeng
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, P. R. China
- National Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou 510006, P. R. China
| | - Yue Niu
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, P. R. China
- National Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou 510006, P. R. China
| | - Yelei Gong
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, P. R. China
- National Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou 510006, P. R. China
| | - Quan Wang
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, P. R. China
- National Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou 510006, P. R. China
| | - Hao Li
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, P. R. China
- National Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou 510006, P. R. China
| | - Ahmad Umar
- Promising Centre for Sensors and Electronic Devices, Department of Chemistry, Faculty of Science and Arts, Najran University, Najran 11001, Kingdom of Saudi Arabia
| | - Nicolaas Frans de Rooij
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, P. R. China
- National Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou 510006, P. R. China
| | - Guofu Zhou
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, P. R. China
- National Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou 510006, P. R. China
| | - Yao Wang
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, P. R. China
- National Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou 510006, P. R. China
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16
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Nalwa HS. A review of molybdenum disulfide (MoS 2) based photodetectors: from ultra-broadband, self-powered to flexible devices. RSC Adv 2020; 10:30529-30602. [PMID: 35516069 PMCID: PMC9056353 DOI: 10.1039/d0ra03183f] [Citation(s) in RCA: 47] [Impact Index Per Article: 11.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/09/2020] [Accepted: 07/17/2020] [Indexed: 12/23/2022] Open
Abstract
Two-dimensional transition metal dichalcogenides (2D TMDs) have attracted much attention in the field of optoelectronics due to their tunable bandgaps, strong interaction with light and tremendous capability for developing diverse van der Waals heterostructures (vdWHs) with other materials. Molybdenum disulfide (MoS2) atomic layers which exhibit high carrier mobility and optical transparency are very suitable for developing ultra-broadband photodetectors to be used from surveillance and healthcare to optical communication. This review provides a brief introduction to TMD-based photodetectors, exclusively focused on MoS2-based photodetectors. The current research advances show that the photoresponse of atomic layered MoS2 can be significantly improved by boosting its charge carrier mobility and incident light absorption via forming MoS2 based plasmonic nanostructures, halide perovskites-MoS2 heterostructures, 2D-0D MoS2/quantum dots (QDs) and 2D-2D MoS2 hybrid vdWHs, chemical doping, and surface functionalization of MoS2 atomic layers. By utilizing these different integration strategies, MoS2 hybrid heterostructure-based photodetectors exhibited remarkably high photoresponsivity raging from mA W-1 up to 1010 A W-1, detectivity from 107 to 1015 Jones and a photoresponse time from seconds (s) to nanoseconds (10-9 s), varying by several orders of magnitude from deep-ultraviolet (DUV) to the long-wavelength infrared (LWIR) region. The flexible photodetectors developed from MoS2-based hybrid heterostructures with graphene, carbon nanotubes (CNTs), TMDs, and ZnO are also discussed. In addition, strain-induced and self-powered MoS2 based photodetectors have also been summarized. The factors affecting the figure of merit of a very wide range of MoS2-based photodetectors have been analyzed in terms of their photoresponsivity, detectivity, response speed, and quantum efficiency along with their measurement wavelengths and incident laser power densities. Conclusions and the future direction are also outlined on the development of MoS2 and other 2D TMD-based photodetectors.
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Affiliation(s)
- Hari Singh Nalwa
- Advanced Technology Research 26650 The Old Road Valencia California 91381 USA
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17
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Khan NA, Zhang R, Wu H, Shen J, Yuan J, Fan C, Cao L, Olson MA, Jiang Z. Solid–Vapor Interface Engineered Covalent Organic Framework Membranes for Molecular Separation. J Am Chem Soc 2020; 142:13450-13458. [DOI: 10.1021/jacs.0c04589] [Citation(s) in RCA: 76] [Impact Index Per Article: 19.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/04/2023]
Affiliation(s)
- Niaz Ali Khan
- Key Laboratory for Green Chemical Technology of Ministry of Education, School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072, P. R. China
- Collaborative Innovation Center of Chemical Science and Engineering, Tianjin 300072, P. R. China
- Institute of Chemical Sciences, University of Peshawar, Peshawar 25120, Pakistan
| | - Runnan Zhang
- Key Laboratory for Green Chemical Technology of Ministry of Education, School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072, P. R. China
- Collaborative Innovation Center of Chemical Science and Engineering, Tianjin 300072, P. R. China
| | - Hong Wu
- Key Laboratory for Green Chemical Technology of Ministry of Education, School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072, P. R. China
- Collaborative Innovation Center of Chemical Science and Engineering, Tianjin 300072, P. R. China
- Tianjin Key Laboratory of Membrane Science and Desalination Technology, Tianjin University, Tianjin 300072, P. R. China
| | - Jianliang Shen
- Key Laboratory for Green Chemical Technology of Ministry of Education, School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072, P. R. China
- Collaborative Innovation Center of Chemical Science and Engineering, Tianjin 300072, P. R. China
| | - Jinqiu Yuan
- Key Laboratory for Green Chemical Technology of Ministry of Education, School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072, P. R. China
- Collaborative Innovation Center of Chemical Science and Engineering, Tianjin 300072, P. R. China
| | - Chunyang Fan
- Key Laboratory for Green Chemical Technology of Ministry of Education, School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072, P. R. China
- Collaborative Innovation Center of Chemical Science and Engineering, Tianjin 300072, P. R. China
| | - Li Cao
- Key Laboratory for Green Chemical Technology of Ministry of Education, School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072, P. R. China
- Collaborative Innovation Center of Chemical Science and Engineering, Tianjin 300072, P. R. China
| | - Mark A. Olson
- School of Pharmaceutical Science and Technology, Tianjin University, Tianjin 300072, P. R. China
- Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
| | - Zhongyi Jiang
- Key Laboratory for Green Chemical Technology of Ministry of Education, School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072, P. R. China
- Collaborative Innovation Center of Chemical Science and Engineering, Tianjin 300072, P. R. China
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18
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Lan C, Shi Z, Cao R, Li C, Zhang H. 2D materials beyond graphene toward Si integrated infrared optoelectronic devices. NANOSCALE 2020; 12:11784-11807. [PMID: 32462161 DOI: 10.1039/d0nr02574g] [Citation(s) in RCA: 19] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
Since the discovery of graphene in 2004, it has become a worldwide hot topic due to its fascinating properties. However, the zero band gap and weak light absorption of graphene strictly restrict its applications in optoelectronic devices. In this regard, semiconducting two-dimensional (2D) materials are thought to be promising candidates for next-generation optoelectronic devices. Infrared (IR) light has gained intensive attention due to its vast applications, including night vision, remote sensing, target acquisition, optical communication, etc. Consequently, the generation, modulation, and detection of IR light are crucial for practical applications. Due to the van der Waals interaction between 2D materials and Si, the lattice mismatch of 2D materials and Si can be neglected; consequently, the integration process can be achieved easily. Herein, we review the recent progress of semiconducting 2D materials in IR optoelectronic devices. Firstly, we introduce the background and motivation of the review. Then, the suitable materials for IR applications are presented, followed by a comprehensive review of the applications of 2D materials in light emitting devices, optical modulators, and photodetectors. Finally, the problems encountered and further developments are summarized. We believe that milestone investigations of IR optoelectronics based on 2D materials beyond graphene will emerge soon, which will bring about great industrial revelations in 2D material-based integrated nanodevice commercialization.
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Affiliation(s)
- Changyong Lan
- State Key Laboratory of Electronic Thin Films and Integrated Devices, and School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China.
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19
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Yu J, Zhong J, Kuang X, Zeng C, Cao L, Liu Y, Liu Z. Dynamic Control of High-Range Photoresponsivity in a Graphene Nanoribbon Photodetector. NANOSCALE RESEARCH LETTERS 2020; 15:124. [PMID: 32494902 PMCID: PMC7270236 DOI: 10.1186/s11671-020-03352-7] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/20/2020] [Accepted: 05/11/2020] [Indexed: 05/30/2023]
Abstract
Graphene has been demonstrated to be a promising material for optoelectronics and photodetection devices because of its ultra-broadband optical absorption and high carrier mobility. However, its integration with optoelectronic systems has been limited by the zero-bandgap and the lack of a gain mechanism. Herein, we demonstrate a novel photodetector based on the graphene nanoribbons (GRNs) with a sizable bandgap. Utilizing trapping charge at the interface between SiO2 and light-doped silicon, an ultrahigh gain of 22,400 has been obtained. Our devices show an enhanced photoresponsivity (~ 800 AW-1) while the response speed is still fast (up to 10 μs). This photoresponsivity is about two orders of magnitude higher compared to that of a previous graphene-based photodetector. The photodetector exhibits a wide-range tunability via source-drain bias and back gate voltage. Our work addresses key challenges for the photodetectors and potentially provides the desired pathway toward practical application of graphene photodetectors that can be externally manipulated by an electric field with fast response speed and high sensitivity.
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Affiliation(s)
- Juan Yu
- School of Electronics and Information, Hangzhou Dianzi University, 1158 Second Street, Xiasha College Park, Hangzhou, 310018, Zhejiang, People's Republic of China.
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan, 410083, People's Republic of China.
| | - Jiahong Zhong
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan, 410083, People's Republic of China
| | - Xiaofei Kuang
- School of Electronics and Information, Hangzhou Dianzi University, 1158 Second Street, Xiasha College Park, Hangzhou, 310018, Zhejiang, People's Republic of China
| | - Cheng Zeng
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan, 410083, People's Republic of China
| | - Lingkai Cao
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan, 410083, People's Republic of China
| | - Yanping Liu
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan, 410083, People's Republic of China.
- State Key Laboratory of High-Performance Complex Manufacturing, Central South University, 932 South Lushan Road, Changsha, Hunan, 410083, People's Republic of China.
- Shenzhen Research Institute of Central South University, A510a, Virtual University Building, Southern District, High-tech Industrial Park, Shenzhen, 518057, People's Republic of China.
| | - Zongwen Liu
- School of Chemical and Biomolecular Engineering, The University of Sydney, Camperdown, Sydney, NSW, 2006, Australia.
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20
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Sun J, Wang Y, Guo S, Wan B, Dong L, Gu Y, Song C, Pan C, Zhang Q, Gu L, Pan F, Zhang J. Lateral 2D WSe 2 p-n Homojunction Formed by Efficient Charge-Carrier-Type Modulation for High-Performance Optoelectronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1906499. [PMID: 31957134 DOI: 10.1002/adma.201906499] [Citation(s) in RCA: 43] [Impact Index Per Article: 10.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/03/2019] [Revised: 11/19/2019] [Indexed: 06/10/2023]
Abstract
As unique building blocks for next-generation optoelectronics, high-quality 2D p-n junctions based on semiconducting transition metal dichalcogenides (TMDs) have attracted wide interest, which are urgent to be exploited. Herein, a novel and facile electron doping of WSe2 by cetyltrimethyl ammonium bromide (CTAB) is achieved for the first time to form a high-quality intramolecular p-n junction with superior optoelectronic properties. Efficient manipulation of charge carrier type and density in TMDs via electron transfer between Br- in CTAB and TMDs is proposed theoretically by density functional theory (DFT) calculations. Compared with the intrinsic WSe2 photodetector, the switching light ratio (Ilight /Idark ) of the p-n junction device can be enhanced by 103 , and the temporal response is also dramatically improved. The device possesses a responsivity of 30 A W-1 , with a specific detectivity of over 1011 Jones. In addition, the mechanism of charge transfer in CTAB-doped 2D WSe2 and WS2 are investigated by designing high-performance field effect transistors. Besides the scientific insight into the effective manipulation of 2D materials by chemical doping, this work presents a promising applicable approach toward next-generation photoelectronic devices with high efficiency.
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Affiliation(s)
- Jiacheng Sun
- Key laboratory of Micro-nano Measurement, Manipulation and Physics (Ministry of Education), School of Physics, Beihang University, Beijing, 100191, China
| | - Yuyan Wang
- Key laboratory of Micro-nano Measurement, Manipulation and Physics (Ministry of Education), School of Physics, Beihang University, Beijing, 100191, China
| | - Shaoqiang Guo
- Key laboratory of Micro-nano Measurement, Manipulation and Physics (Ministry of Education), School of Physics, Beihang University, Beijing, 100191, China
| | - Bensong Wan
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100190, China
| | - Lianqing Dong
- Key laboratory of Micro-nano Measurement, Manipulation and Physics (Ministry of Education), School of Physics, Beihang University, Beijing, 100191, China
| | - Youdi Gu
- School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Cheng Song
- School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Caofeng Pan
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100190, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Lin Gu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Feng Pan
- School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Junying Zhang
- Key laboratory of Micro-nano Measurement, Manipulation and Physics (Ministry of Education), School of Physics, Beihang University, Beijing, 100191, China
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21
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Elahi E, Khan MF, Rehman S, Khalil HMW, Rehman MA, Kim DK, Kim H, Khan K, Shahzad M, Iqbal MW, Basit MA, Khan F. Enhanced electrical and broad spectral (UV-Vis-NIR) photodetection in a Gr/ReSe 2/Gr heterojunction. Dalton Trans 2020; 49:10017-10027. [DOI: 10.1039/d0dt01164a] [Citation(s) in RCA: 18] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/27/2022]
Abstract
Excellent electrical and photoelectrical study of vertical integration by layered two-dimensional materials having gate tunable broad spectral (UV-Vis-NIR) light detection response.
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Affiliation(s)
- Ehsan Elahi
- Department of Physics
- Riphah International University
- Lahore
- Pakistan
| | | | - Shania Rehman
- Department of Electrical Engineering
- Sejong University
- Gwangjin-gu
- Korea
| | - H. M. Waseem Khalil
- Department of Electrical Engineering
- College of Engineering and Technology
- University of Sargodha
- Pakistan
| | - Malik Abdul Rehman
- School of Mechanical Engineering
- Yonsei University
- Seodaemun-gu
- South Korea
| | - Deok-kee Kim
- Department of Electrical Engineering
- Sejong University
- Gwangjin-gu
- Korea
| | - Honggyun Kim
- Department of Electrical Engineering
- Sejong University
- Gwangjin-gu
- Korea
| | - Karim Khan
- School of Electrical Engineering & Intelligentization
- Dongguan University of Technology (DGUT)
- Dongguan
- China
- Institute of Microscale Optoelectronics
| | - Moazzam Shahzad
- Federal Urdu University of Science and Technology G-7/1
- Islamabad
- Pakistan
| | | | - Muhammad Abdul Basit
- Department of Materials Science and Engineering
- Institute of Space Technology
- Islamabad 44000
- Pakistan
| | - Fasihullah Khan
- Davision of Electronics and Electrical Engineering
- Dongguk University
- 04620 Seoul
- Korea
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22
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Martín-García B, Spirito D, Bellani S, Prato M, Romano V, Polovitsyn A, Brescia R, Oropesa-Nuñez R, Najafi L, Ansaldo A, D'Angelo G, Pellegrini V, Krahne R, Moreels I, Bonaccorso F. Extending the Colloidal Transition Metal Dichalcogenide Library to ReS 2 Nanosheets for Application in Gas Sensing and Electrocatalysis. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2019; 15:e1904670. [PMID: 31788951 DOI: 10.1002/smll.201904670] [Citation(s) in RCA: 20] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/19/2019] [Revised: 11/04/2019] [Indexed: 06/10/2023]
Abstract
Among the large family of transition metal dichalcogenides, recently ReS2 has stood out due to its nearly layer-independent optoelectronic and physicochemical properties related to its 1T distorted octahedral structure. This structure leads to strong in-plane anisotropy, and the presence of active sites at its surface makes ReS2 interesting for gas sensing and catalysts applications. However, current fabrication methods use chemical or physical vapor deposition (CVD or PVD) processes that are costly, time-consuming and complex, therefore limiting its large-scale production and exploitation. To address this issue, a colloidal synthesis approach is developed, which allows the production of ReS2 at temperatures below 360 °C and with reaction times shorter than 2h. By combining the solution-based synthesis with surface functionalization strategies, the feasibility of colloidal ReS2 nanosheet films for sensing different gases is demonstrated with highly competitive performance in comparison with devices built with CVD-grown ReS2 and MoS2 . In addition, the integration of the ReS2 nanosheet films in assemblies together with carbon nanotubes allows to fabricate electrodes for electrocatalysis for H2 production in both acid and alkaline conditions. Results from proof-of-principle devices show an electrocatalytic overpotential competitive with devices based on ReS2 produced by CVD, and even with MoS2 , WS2 , and MoSe2 electrocatalysts.
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Affiliation(s)
- Beatriz Martín-García
- Graphene Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
- Nanochemistry Department, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
| | - Davide Spirito
- Optoelectronics Group, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
| | - Sebastiano Bellani
- Graphene Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
| | - Mirko Prato
- Materials Characterization Facility, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
| | - Valentino Romano
- Graphene Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
- Dipartimento di Scienze Matematiche ed Informatiche, Scienze Fisiche e Scienze della Terra, Università di Messina, Viale F. Stagno d'Alcontres 31, S. Agata, 98166, Messina, Italy
| | - Anatolii Polovitsyn
- Nanochemistry Department, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
- Department of Chemistry, Ghent University, Krijgslaan 281-S3, 9000, Gent, Belgium
| | - Rosaria Brescia
- Electron Microscopy Facility, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
| | | | - Leyla Najafi
- Graphene Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
| | - Alberto Ansaldo
- Graphene Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
| | - Giovanna D'Angelo
- Dipartimento di Scienze Matematiche ed Informatiche, Scienze Fisiche e Scienze della Terra, Università di Messina, Viale F. Stagno d'Alcontres 31, S. Agata, 98166, Messina, Italy
| | - Vittorio Pellegrini
- Graphene Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
- BeDimensional Spa., Via Albisola 121, 16163, Genova, Italy
| | - Roman Krahne
- Optoelectronics Group, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
| | - Iwan Moreels
- Nanochemistry Department, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
- Department of Chemistry, Ghent University, Krijgslaan 281-S3, 9000, Gent, Belgium
| | - Francesco Bonaccorso
- Graphene Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
- BeDimensional Spa., Via Albisola 121, 16163, Genova, Italy
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23
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Kim J, Heo K, Kang D, Shin C, Lee S, Yu H, Park J. Rhenium Diselenide (ReSe 2) Near-Infrared Photodetector: Performance Enhancement by Selective p-Doping Technique. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2019; 6:1901255. [PMID: 31728284 PMCID: PMC6839648 DOI: 10.1002/advs.201901255] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/24/2019] [Revised: 07/19/2019] [Indexed: 05/28/2023]
Abstract
In this study, a near-infrared photodetector featuring a high photoresponsivity and a short photoresponse time is demonstrated, which is fabricated on rhenium diselenide (ReSe2) with a relatively narrow bandgap (0.9-1.0 eV) compared to conventional transition-metal dichalcogenides (TMDs). The excellent photo and temporal responses, which generally show a trade-off relation, are achieved simultaneously by applying a p-doping technique based on hydrochloric acid (HCl) to a selected ReSe2 region. Because the p-doping of ReSe2 originates from the charge transfer from un-ionized Cl molecules in the HCl to the ReSe2 surface, by adjusting the concentration of the HCl solution from 0.1 to 10 m, the doping concentration of the ReSe2 is controlled between 3.64 × 1010 and 3.61 × 1011 cm-2. Especially, the application of the selective HCl doping technique to the ReSe2 photodetector increases the photoresponsivity from 79.99 to 1.93 × 103 A W-1, and it also enhances the rise and decay times from 10.5 to 1.4 ms and from 291 to 3.1 ms, respectively, compared with the undoped ReSe2 device. The proposed selective p-doping technique and its fundamental analysis will provide a scientific foundation for implementing high-performance TMD-based electronic and optoelectronic devices.
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Affiliation(s)
- Jinok Kim
- Department of Electrical and Computer EngineeringSungkyunkwan UniversitySuwon16419Korea
| | - Keun Heo
- Department of Electrical and Computer EngineeringSungkyunkwan UniversitySuwon16419Korea
| | - Dong‐Ho Kang
- Department of Electrical and Computer EngineeringSungkyunkwan UniversitySuwon16419Korea
- School of Electrical and Electronic EngineeringNanyang Technological University50 Nanyang Avenue639798SingaporeSingapore
| | - Changhwan Shin
- Department of Electrical and Computer EngineeringSungkyunkwan UniversitySuwon16419Korea
| | - Sungjoo Lee
- SKKU Advanced Institute of Nano Technology (SAINT)Sungkyunkwan UniversitySuwon16419Korea
| | - Hyun‐Yong Yu
- School of Electrical EngineeringKorea UniversitySeoul02841Korea
| | - Jin‐Hong Park
- Department of Electrical and Computer EngineeringSungkyunkwan UniversitySuwon16419Korea
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Ultrasensitive MoS 2 photodetector by serial nano-bridge multi-heterojunction. Nat Commun 2019; 10:4701. [PMID: 31619671 PMCID: PMC6796006 DOI: 10.1038/s41467-019-12592-w] [Citation(s) in RCA: 37] [Impact Index Per Article: 7.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/01/2019] [Accepted: 09/12/2019] [Indexed: 12/04/2022] Open
Abstract
The recent reports of various photodetectors based on molybdenum disulfide (MoS2) field effect transistors showed that it was difficult to obtain optoelectronic performances in the broad detection range [visible–infrared (IR)] applicable to various fields. Here, by forming a mono-/multi-layer nano-bridge multi-heterojunction structure (more than > 300 junctions with 25 nm intervals) through the selective layer control of multi-layer MoS2, a photodetector with ultrasensitive optoelectronic performances in a broad spectral range (photoresponsivity of 2.67 × 106 A/W at λ = 520 nm and 1.65 × 104 A/W at λ = 1064 nm) superior to the previously reported MoS2-based photodetectors could be successfully fabricated. The nano-bridge multi-heterojunction is believed to be an important device technology that can be applied to broadband light sensing, highly sensitive fluorescence imaging, ultrasensitive biomedical diagnostics, and ultrafast optoelectronic integrated circuits through the formation of a nanoscale serial multi-heterojunction, just by adding a selective layer control process. Fabrication of photodetector devices by selective etching of 2D materials can enable broadband detection. Here, the authors design mono- and multi-layer nano-bridge multi-heterojunction photodetectors based on MoS2 with high responsivities of 2.67 × 106 A/W and 1.65 × 104 A/W in the visible–infrared wavelength range and fast photoresponse.
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25
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Kim SG, Kim SH, Park J, Kim GS, Park JH, Saraswat KC, Kim J, Yu HY. Infrared Detectable MoS 2 Phototransistor and Its Application to Artificial Multilevel Optic-Neural Synapse. ACS NANO 2019; 13:10294-10300. [PMID: 31469532 DOI: 10.1021/acsnano.9b03683] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
Layered two-dimensional (2D) materials have entered the spotlight as promising channel materials for future optoelectronic devices owing to their excellent electrical and optoelectronic properties. However, their limited photodetection range caused by their wide bandgap remains a principal challenge in 2D layered materials-based phototransistors. Here, we developed a germanium (Ge)-gated MoS2 phototransistor that can detect light in the region from visible to infrared (λ = 520-1550 nm) using a detection mechanism based on band bending modulation. In addition, the Ge-gated MoS2 phototransistor is proposed as a multilevel optic-neural synaptic device, which performs both optical-sensing and synaptic functions on one device and is operated in different current ranges according to the light conditions: dark, visible, and infrared. This study is expected to contribute to the development of 2D material-based phototransistors and synaptic devices in next-generation optoelectronics.
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Affiliation(s)
- Seung-Geun Kim
- Department of Semiconductor Systems Engineering , Korea University , 145, Anam-ro , Seongbuk-gu , Seoul 02841 , Korea
| | - Seung-Hwan Kim
- School of Electrical Engineering , Korea University , 145, Anam-ro , Seongbuk-gu , Seoul 02841 , Korea
| | - June Park
- Department of Nano Semiconductor Engineering , Korea University , 145, Anam-ro , Seongbuk-gu , Seoul 02841 , Korea
| | - Gwang-Sik Kim
- School of Electrical Engineering , Korea University , 145, Anam-ro , Seongbuk-gu , Seoul 02841 , Korea
| | - Jae-Hyeun Park
- School of Electrical Engineering , Korea University , 145, Anam-ro , Seongbuk-gu , Seoul 02841 , Korea
| | - Krishna C Saraswat
- Department of Electrical Engineering , Stanford University , Stanford , California 94305 , United States
| | - Jiyoung Kim
- Department of Materials Science and Engineering , The University of Texas at Dallas , Richardson , Texas 75080 , United States
| | - Hyun-Yong Yu
- Department of Semiconductor Systems Engineering , Korea University , 145, Anam-ro , Seongbuk-gu , Seoul 02841 , Korea
- School of Electrical Engineering , Korea University , 145, Anam-ro , Seongbuk-gu , Seoul 02841 , Korea
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26
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Han KH, Kim GS, Park J, Kim SG, Park JH, Yu HY. Reduction of Threshold Voltage Hysteresis of MoS 2 Transistors with 3-Aminopropyltriethoxysilane Passivation and Its Application for Improved Synaptic Behavior. ACS APPLIED MATERIALS & INTERFACES 2019; 11:20949-20955. [PMID: 31117422 DOI: 10.1021/acsami.9b01391] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Although molybdenum disulfide (MoS2) is highlighted as a promising channel material, MoS2-based field-effect transistors (FETs) have a large threshold voltage hysteresis (Δ VTH) from interface traps at their gate interfaces. In this work, the Δ VTH of MoS2 FETs is significantly reduced by inserting a 3-aminopropyltriethoxysilane (APTES) passivation layer at the MoS2/SiO2 gate interface owing to passivation of the interface traps. The Δ VTH is reduced from 23 to 10.8 V by inserting the 1%-APTES passivation layers because APTES passivation prevents trapping and detrapping of electrons, which are the major source of the Δ VTH. The reduction in the density of interface traps ( Dit) is confirmed by the improvement of the subthreshold swing (SS) after inserting the APTES layer. Furthermore, the improvement in the synaptic characteristics of the MoS2 FET through the APTES passivation is investigated. Both inhibitory and excitatory postsynaptic currents (PSC) are increased by 33% owing to the reduction in the Δ VTH and the n-type doping effect of the APTES layer; moreover, the linearity of PSC characteristics is significantly improved because the reduction in Δ VTH enables the synaptic operation to be over the threshold region, which is linear. The application of the APTES gate passivation technique to MoS2 FETs is promising for reliable and accurate synaptic applications in neuromorphic computing technology as well as for the next-generation complementary logic applications.
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Affiliation(s)
| | | | | | | | - Jin-Hong Park
- School of Electronic and Electrical Engineering , Sungkyunkwan University , Suwon 16419 , Korea
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27
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Bertolazzi S, Gobbi M, Zhao Y, Backes C, Samorì P. Molecular chemistry approaches for tuning the properties of two-dimensional transition metal dichalcogenides. Chem Soc Rev 2018; 47:6845-6888. [PMID: 30043037 DOI: 10.1039/c8cs00169c] [Citation(s) in RCA: 127] [Impact Index Per Article: 21.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
Abstract
Two-dimensional (2D) semiconductors, such as ultrathin layers of transition metal dichalcogenides (TMDs), offer a unique combination of electronic, optical and mechanical properties, and hold potential to enable a host of new device applications spanning from flexible/wearable (opto)electronics to energy-harvesting and sensing technologies. A critical requirement for developing practical and reliable electronic devices based on semiconducting TMDs consists in achieving a full control over their charge-carrier polarity and doping. Inconveniently, such a challenging task cannot be accomplished by means of well-established doping techniques (e.g. ion implantation and diffusion), which unavoidably damage the 2D crystals resulting in degraded device performances. Nowadays, a number of alternatives are being investigated, including various (supra)molecular chemistry approaches relying on the combination of 2D semiconductors with electroactive donor/acceptor molecules. As yet, a large variety of molecular systems have been utilized for functionalizing 2D TMDs via both covalent and non-covalent interactions. Such research endeavours enabled not only the tuning of the charge-carrier doping but also the engineering of the optical, electronic, magnetic, thermal and sensing properties of semiconducting TMDs for specific device applications. Here, we will review the most enlightening recent advancements in experimental (supra)molecular chemistry methods for tailoring the properties of atomically-thin TMDs - in the form of substrate-supported or solution-dispersed nanosheets - and we will discuss the opportunities and the challenges towards the realization of novel hybrid materials and devices based on 2D semiconductors and molecular systems.
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Affiliation(s)
- Simone Bertolazzi
- Université de Strasbourg, CNRS, ISIS, 8 alleé Gaspard Monge, 67000 Strasbourg, France.
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28
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Pradhan NR, Garcia C, Isenberg B, Rhodes D, Feng S, Memaran S, Xin Y, McCreary A, Walker ARH, Raeliarijaona A, Terrones H, Terrones M, McGill S, Balicas L. Phase Modulators Based on High Mobility Ambipolar ReSe 2 Field-Effect Transistors. Sci Rep 2018; 8:12745. [PMID: 30143693 PMCID: PMC6109127 DOI: 10.1038/s41598-018-30969-7] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/28/2018] [Accepted: 08/09/2018] [Indexed: 11/09/2022] Open
Abstract
We fabricated ambipolar field-effect transistors (FETs) from multi-layered triclinic ReSe2, mechanically exfoliated onto a SiO2 layer grown on p-doped Si. In contrast to previous reports on thin layers (~2 to 3 layers), we extract field-effect carrier mobilities in excess of 102 cm2/Vs at room temperature in crystals with nearly ~10 atomic layers. These thicker FETs also show nearly zero threshold gate voltage for conduction and high ON to OFF current ratios when compared to the FETs built from thinner layers. We also demonstrate that it is possible to utilize this ambipolarity to fabricate logical elements or digital synthesizers. For instance, we demonstrate that one can produce simple, gate-voltage tunable phase modulators with the ability to shift the phase of the input signal by either 90° or nearly 180°. Given that it is possible to engineer these same elements with improved architectures, for example on h-BN in order to decrease the threshold gate voltage and increase the carrier mobilities, it is possible to improve their characteristics in order to engineer ultra-thin layered logic elements based on ReSe2.
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Affiliation(s)
- Nihar R Pradhan
- Department of Chemistry, Physics and Atmospheric Sciences, Jackson State University, Jackson, MS, 39217, USA. .,National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL, 32310, USA.
| | - Carlos Garcia
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL, 32310, USA.,Department of Physics, Florida State University, Tallahassee, FL, 32306, USA
| | - Bridget Isenberg
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL, 32310, USA.,Lincoln High School, Tallahassee, FL, 32311, USA
| | - Daniel Rhodes
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL, 32310, USA.,Department of Physics, Florida State University, Tallahassee, FL, 32306, USA
| | - Simin Feng
- Department of Physics and Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Shahriar Memaran
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL, 32310, USA.,Department of Physics, Florida State University, Tallahassee, FL, 32306, USA
| | - Yan Xin
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL, 32310, USA
| | - Amber McCreary
- Engineering Physics Division, Physical Measurement Laboratory, NIST, Gaithersburg, Maryland, 20899, USA
| | - Angela R Hight Walker
- Engineering Physics Division, Physical Measurement Laboratory, NIST, Gaithersburg, Maryland, 20899, USA
| | - Aldo Raeliarijaona
- Rensselaer Polytechnic Institute, Department of Physics, Applied Physics, and Astronomy, Troy, NY, 12180, USA
| | - Humberto Terrones
- Rensselaer Polytechnic Institute, Department of Physics, Applied Physics, and Astronomy, Troy, NY, 12180, USA
| | - Mauricio Terrones
- Department of Physics and Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA, 16802, USA.,Department of Materials Science & Engineering, The Pennsylvania State University, University Park, PA, 16802, USA.,Department of Chemistry, The Pennsylvania State University, University Park, PA, 16802, USA.,Institute of Carbon Science and Technology, Faculty of Engineering, Shinshu University, Nagano, 380-8553, Japan
| | - Stephen McGill
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL, 32310, USA
| | - Luis Balicas
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL, 32310, USA. .,Department of Physics, Florida State University, Tallahassee, FL, 32306, USA.
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29
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He J, Zhang L, He D, Wang Y, He Z, Zhao H. Ultrafast transient absorption measurements of photocarrier dynamics in monolayer and bulk ReSe 2. OPTICS EXPRESS 2018; 26:21501-21509. [PMID: 30130856 DOI: 10.1364/oe.26.021501] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/02/2018] [Accepted: 07/21/2018] [Indexed: 06/08/2023]
Abstract
Recently, transition metal dichalcogenides have been extensively studied as new functional materials for electronic and optoelectronic applications. Most initial efforts have been focused on several members of this material family with 2H lattice structure. ReSe2 as a less-study transition metal dichalcogenide has gained significant momentum due to its 1T lattice structure and in-plane anisotropic electronic and optical properties. Extensive efforts have shown its promising future as a novel material for optoelectronics. However, little was known about the photocarrier dynamics in this material. Here we report the first transient absorption measurement of photocarrier dynamics in ReSe2 bulk and monolayer sample in reflection geometry. We observed ultrafast thermalization and relaxation of hot carriers in bulk ReSe2, and obtained a photocarrier lifetime on the order of 80 ps and decreases slightly with increasing the carrier density. Pronounced anisotropic response of differential reflection was observed. We also studied monolayer ReSe2 samples obtained by chemical vapor deposition and deduced a photocarrier lifetime on the order of 10 ps. These results provide fundamental information for using this material in various optoelectronic devices.
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30
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Lee HW, Kang DH, Cho JH, Lee S, Jun DH, Park JH. Highly Sensitive and Reusable Membraneless Field-Effect Transistor (FET)-Type Tungsten Diselenide (WSe 2) Biosensors. ACS APPLIED MATERIALS & INTERFACES 2018; 10:17639-17645. [PMID: 29767497 DOI: 10.1021/acsami.8b03432] [Citation(s) in RCA: 28] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
In recent years when the demand for high-performance biosensors has been aroused, a field-effect transistor (FET)-type biosensor (BioFET) has attracted great interest because of its high sensitivity, label-free detection, fast detection speed, and miniaturization. However, the insulating membrane in the conventional BioFET, which is essential in preventing the surface dangling bonds of typical semiconductors from nonspecific bindings, has limited the sensitivity of biosensors. Here, we present a highly sensitive and reusable membraneless BioFET based on a defect-free van der Waals material, tungsten diselenide (WSe2). We intentionally generated a few surface defects that serve as extra binding sites for the bioreceptor immobilization through weak oxygen plasma treatment, consequently magnifying the sensitivity values to 2.87 × 105 A/A for 10 mM glucose. The WSe2 BioFET also maintained its high sensitivity even after several cycles of rinsing and glucose application were repeated.
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Affiliation(s)
| | | | | | | | - Dong-Hwan Jun
- Korea Advanced Nano Fab Center (KANC) , Suwon 16229 , Korea
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31
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Jo S, Lee HW, Shim J, Heo K, Kim M, Song YJ, Park J. Highly Efficient Infrared Photodetection in a Gate-Controllable Van der Waals Heterojunction with Staggered Bandgap Alignment. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2018; 5:1700423. [PMID: 29721405 PMCID: PMC5908375 DOI: 10.1002/advs.201700423] [Citation(s) in RCA: 30] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/27/2017] [Revised: 10/04/2017] [Indexed: 05/25/2023]
Abstract
In recent years, various van der Waals (vdW) materials have been used in implementing high-performance photodetectors with high photoresponsivity over a wide detection range. However, in most studies reported so far, photodetection in the infrared (IR) region has not been achieved successfully. Although several vdW materials with narrow bandgaps have been proposed for IR detection, the devices based on these materials exhibit notably low photoresponsivity under IR light illumination. Here, highly efficient near-infrared (NIR) photodetection based on the interlayer optical transition phenomenon in a vdW heterojunction structure consisting of ReS2 and ReSe2 is demonstrated. In addition, by applying the gate-control function to the two-terminal vdW heterojunction photodetector, the photoresponsivity is enhanced to 3.64 × 105 A W-1 at λ = 980 nm and 1.58 × 105 A W-1 at λ = 1310 nm. Compared to the values reported for previous vdW photodetectors, these results are the highest levels of photoresponsivity in the NIR range. The study offers a novel device platform for achieving high-performance IR photodetectors.
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Affiliation(s)
- Seo‐Hyeon Jo
- School of Electronic and Electrical EngineeringSungkyunkwan UniversitySuwon16419South Korea
| | - Hae Won Lee
- School of Electronic and Electrical EngineeringSungkyunkwan UniversitySuwon16419South Korea
| | - Jaewoo Shim
- School of Electronic and Electrical EngineeringSungkyunkwan UniversitySuwon16419South Korea
| | - Keun Heo
- School of Electronic and Electrical EngineeringSungkyunkwan UniversitySuwon16419South Korea
| | - Minwoo Kim
- SKKU Advanced Institute of Nano Technology (SAINT)Sungkyunkwan UniversitySuwon16419South Korea
| | - Young Jae Song
- SKKU Advanced Institute of Nano Technology (SAINT)Sungkyunkwan UniversitySuwon16419South Korea
| | - Jin‐Hong Park
- School of Electronic and Electrical EngineeringSungkyunkwan UniversitySuwon16419South Korea
- SKKU Advanced Institute of Nano Technology (SAINT)Sungkyunkwan UniversitySuwon16419South Korea
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32
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Gong C, Zhang Y, Chen W, Chu J, Lei T, Pu J, Dai L, Wu C, Cheng Y, Zhai T, Li L, Xiong J. Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2017; 4:1700231. [PMID: 29270337 PMCID: PMC5737141 DOI: 10.1002/advs.201700231] [Citation(s) in RCA: 70] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/18/2017] [Revised: 07/28/2017] [Indexed: 05/20/2023]
Abstract
With the continuous exploration of 2D transition metal dichalcogenides (TMDs), novel high-performance devices based on the remarkable electronic and optoelectronic natures of 2D TMDs are increasingly emerging. As fresh blood of 2D TMD family, anisotropic MTe2 and ReX2 (M = Mo, W, and X = S, Se) have drawn increasing attention owing to their low-symmetry structures and charming properties of mechanics, electronics, and optoelectronics, which are suitable for the applications of field-effect transistors (FETs), photodetectors, thermoelectric and piezoelectric applications, especially catering to anisotropic devices. Herein, a comprehensive review is introduced, concentrating on their recent progresses and various applications in recent years. First, the crystalline structure and the origin of the strong anisotropy characterized by various techniques are discussed. Specifically, the preparation of these 2D materials is presented and various growth methods are summarized. Then, high-performance applications of these anisotropic TMDs, including FETs, photodetectors, and thermoelectric and piezoelectric applications are discussed. Finally, the conclusion and outlook of these applications are proposed.
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Affiliation(s)
- Chuanhui Gong
- State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu610054P. R. China
| | - Yuxi Zhang
- State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu610054P. R. China
| | - Wei Chen
- State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu610054P. R. China
| | - Junwei Chu
- State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu610054P. R. China
| | - Tianyu Lei
- State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu610054P. R. China
| | - Junru Pu
- State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu610054P. R. China
| | - Liping Dai
- State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu610054P. R. China
| | - Chunyang Wu
- State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu610054P. R. China
| | - Yuhua Cheng
- School of Automation EngineeringUniversity of Electronic Science and Technology of ChinaChengdu610054P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Material Processing and Die & Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Liang Li
- College of Physics, Optoelectronics and EnergyCenter for Energy Conversion Materials & Physics (CECMP)Soochow UniversitySuzhou215006P. R. China
| | - Jie Xiong
- State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu610054P. R. China
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Tan D, Zhang W, Wang X, Koirala S, Miyauchi Y, Matsuda K. Polarization-sensitive and broadband germanium sulfide photodetectors with excellent high-temperature performance. NANOSCALE 2017; 9:12425-12431. [PMID: 28809426 DOI: 10.1039/c7nr03040a] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
Layered materials, such as graphene, transition metal dichalcogenides and black phosphorene, have been established rapidly as intriguing building blocks for optoelectronic devices. Here, we introduce highly polarization sensitive, broadband, and high-temperature-operation photodetectors based on multilayer germanium sulfide (GeS). The GeS photodetector shows a high photoresponsivity of about 6.8 × 103 A W-1, an extremely high specific detectivity of 5.6 × 1014 Jones, and broad spectral response in the wavelength range of 300-800 nm. More importantly, the GeS photodetector has high polarization sensitivity to incident linearly polarized light, which provides another degree of freedom for photodetectors. Tremendously enhanced photoresponsivity is observed with a temperature increase, and high responsivity is achievable at least up to 423 K. The establishment of larger photoinduced reduction of the Schottky barrier height will be significant for the investigation of the photoresponse mechanism of 2D layered material-based photodetectors. These attributes of high photocurrent generation in a wide temperature range, broad spectral response, and polarization sensitivity coupled with environmental stability indicate that the proposed GeS photodetector is very suitable for optoelectronic applications.
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Affiliation(s)
- Dezhi Tan
- Institute of Advanced Energy, Kyoto University, Uji, Kyoto 611-0011, Japan.
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34
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Li X, Cui F, Feng Q, Wang G, Xu X, Wu J, Mao N, Liang X, Zhang Z, Zhang J, Xu H. Controlled growth of large-area anisotropic ReS 2 atomic layer and its photodetector application. NANOSCALE 2016; 8:18956-18962. [PMID: 27805226 DOI: 10.1039/c6nr07233j] [Citation(s) in RCA: 39] [Impact Index Per Article: 4.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
As an anisotropic 2D layered material, rhenium disulfide (ReS2) has attracted much attention because of its unusual properties and promising applications in electronic and optoelectronic devices. However, the low lattice symmetry and interlayer decoupling of ReS2 make asymmetric growth and out-of-plane growth occur quite easily; therefore, thick flake, dendritic and flower-like structures of ReS2 have mostly been obtained previously. Here, we report on an approach based on space-confined epitaxial growth for the controlled synthesis of ReS2 films. Using this approach, large-area and high-quality ReS2 films with uniform monolayer thickness can grow on a mica substrate. Furthermore, the weak van der Waals interaction between the surface of mica and ReS2 clusters, which favors surface-confined growth while avoiding out-of-plane growth, is critical for growing ReS2 with uniform monolayer thickness. The morphological evolution of ReS2 with the growth temperature reveals that asymmetric growth can be suppressed at relatively low temperatures. A ReS2 field-effect transistor displayed a current on/off ratio of 106 and an electron mobility of up to 40 cm2 V-1 s-1, with outstanding photoresponsivity of 12 A W-1. This work not only promotes the large-scale employment of ReS2 in high-performance optoelectronic devices, but also provides a means of controlling the unusual growth behavior of low-lattice-symmetry 2D layered materials.
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Affiliation(s)
- Xiaobo Li
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China.
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Shim J, Oh S, Kang DH, Jo SH, Ali MH, Choi WY, Heo K, Jeon J, Lee S, Kim M, Song YJ, Park JH. Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic. Nat Commun 2016; 7:13413. [PMID: 27819264 PMCID: PMC5103069 DOI: 10.1038/ncomms13413] [Citation(s) in RCA: 148] [Impact Index Per Article: 18.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/26/2016] [Accepted: 09/26/2016] [Indexed: 12/12/2022] Open
Abstract
Recently, negative differential resistance devices have attracted considerable attention due to their folded current-voltage characteristic, which presents multiple threshold voltage values. Because of this remarkable property, studies associated with the negative differential resistance devices have been explored for realizing multi-valued logic applications. Here we demonstrate a negative differential resistance device based on a phosphorene/rhenium disulfide (BP/ReS2) heterojunction that is formed by type-III broken-gap band alignment, showing high peak-to-valley current ratio values of 4.2 and 6.9 at room temperature and 180 K, respectively. Also, the carrier transport mechanism of the BP/ReS2 negative differential resistance device is investigated in detail by analysing the tunnelling and diffusion currents at various temperatures with the proposed analytic negative differential resistance device model. Finally, we demonstrate a ternary inverter as a multi-valued logic application. This study of a two-dimensional material heterojunction is a step forward toward future multi-valued logic device research.
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Affiliation(s)
- Jaewoo Shim
- School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746, Korea
| | - Seyong Oh
- School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746, Korea
| | - Dong-Ho Kang
- School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746, Korea
| | - Seo-Hyeon Jo
- School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746, Korea
| | - Muhammad Hasnain Ali
- School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746, Korea
| | - Woo-Young Choi
- School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746, Korea
| | - Keun Heo
- Frontier Technology Lab, R&D Headquarters, SK Hynix Co. Ltd., Ichon 460-701, Korea
| | - Jaeho Jeon
- Sungkyunkwan University Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746, Korea
| | - Sungjoo Lee
- Sungkyunkwan University Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746, Korea
| | - Minwoo Kim
- Sungkyunkwan University Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746, Korea
| | - Young Jae Song
- Sungkyunkwan University Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746, Korea
| | - Jin-Hong Park
- School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746, Korea
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