1
|
Dubrovskii VG. Can Nanowires Coalesce? NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2768. [PMID: 37887919 PMCID: PMC10609440 DOI: 10.3390/nano13202768] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/19/2023] [Revised: 10/08/2023] [Accepted: 10/11/2023] [Indexed: 10/28/2023]
Abstract
Coalescence of nanowires and other three-dimensional structures into continuous film is desirable for growing low-dislocation-density III-nitride and III-V materials on lattice-mismatched substrates; this is also interesting from a fundamental viewpoint. Here, we develop a growth model for vertical nanowires which, under rather general assumptions on the solid-like coalescence process within the Kolmogorov crystallization theory, results in a morphological diagram for the asymptotic coverage of a substrate surface. The coverage is presented as a function of two variables: the material collection efficiency on the top nanowire facet a and the normalized surface diffusion flux of adatoms from the NW sidewalls b. The full coalescence of nanowires is possible only when a=1, regardless of b. At a>1, which often holds for vapor-liquid-solid growth with a catalyst droplet, nanowires can only partly merge but never coalesce into continuous film. In vapor phase epitaxy techniques, the NWs can partly merge but never fully coalesce, while in the directional molecular beam epitaxy the NWs can fully coalesce for small enough contact angles of their droplets corresponding to a=1. The growth kinetics of nanowires and evolution of the coverage in the pre-coalescence stage is also considered. These results can be used for predicting and controlling the degree of surface coverage by nanowires and three-dimensional islands by tuning the surface density, droplet size, adatoms diffusivity, and geometry of the initial structures in the vapor-liquid-solid, selective area, or self-induced growth by different epitaxy techniques.
Collapse
Affiliation(s)
- Vladimir G Dubrovskii
- Faculty of Physics, St. Petersburg State University, Universitetskaya Emb. 13B, 199034 St. Petersburg, Russia
| |
Collapse
|
2
|
Wang J, Xie N, Xu F, Zhang L, Lang J, Kang X, Qin Z, Yang X, Tang N, Wang X, Ge W, Shen B. Group-III nitride heteroepitaxial films approaching bulk-class quality. NATURE MATERIALS 2023:10.1038/s41563-023-01573-6. [PMID: 37349395 DOI: 10.1038/s41563-023-01573-6] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/20/2022] [Accepted: 05/15/2023] [Indexed: 06/24/2023]
Abstract
III-nitride wide bandgap semiconductors are promising materials for modern optoelectronics and electronics. Their application has progressed greatly thanks to the continuous quality improvements of heteroepitaxial films grown on large-lattice-mismatched foreign substrates. But compared with bulk single crystals, there is still tremendous room for the further improvement of the material quality. Here we show a paradigm to achieve high-quality III-nitride heteroepitaxial films by the controllable discretization and coalescence of columns. By adopting nano-patterned AlN/sapphire templates with regular hexagonal holes, discrete AlN columns coalesce with uniform out-of-plane and in-plane orientations guaranteed by sapphire nitridation pretreatment and the ordered lateral growth of cleavage facets, which efficiently suppresses the regeneration of threading dislocations during coalescence. The density of dislocation etch pits in the AlN heteroepitaxial film reaches 3.3 × 104 cm-2, close to the present available AlN bulk single crystals. This study facilitates the growth of bulk-class quality III-nitride films featuring low cost and scalability.
Collapse
Affiliation(s)
- Jiaming Wang
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China
| | - Nan Xie
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China
| | - Fujun Xu
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China.
| | - Lisheng Zhang
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China
| | - Jing Lang
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China
| | - Xiangning Kang
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China
| | - Zhixin Qin
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China
| | - Xuelin Yang
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China
| | - Ning Tang
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China
- Nano-optoelectronics Frontier Center of Ministry of Education, Peking University, Beijing, China
- Collaborative Innovation Center of Quantum Matter, Beijing, China
| | - Xinqiang Wang
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China
- Nano-optoelectronics Frontier Center of Ministry of Education, Peking University, Beijing, China
- Collaborative Innovation Center of Quantum Matter, Beijing, China
| | - Weikun Ge
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China
| | - Bo Shen
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China.
- Nano-optoelectronics Frontier Center of Ministry of Education, Peking University, Beijing, China.
- Collaborative Innovation Center of Quantum Matter, Beijing, China.
| |
Collapse
|
3
|
Heintz A, Ilahi B, Pofelski A, Botton G, Patriarche G, Barzaghi A, Fafard S, Arès R, Isella G, Boucherif A. Defect free strain relaxation of microcrystals on mesoporous patterned silicon. Nat Commun 2022; 13:6624. [PMID: 36333304 PMCID: PMC9636155 DOI: 10.1038/s41467-022-34288-4] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/07/2022] [Accepted: 10/19/2022] [Indexed: 11/06/2022] Open
Abstract
A perfectly compliant substrate would allow the monolithic integration of high-quality semiconductor materials such as Ge and III-V on Silicon (Si) substrate, enabling novel functionalities on the well-established low-cost Si technology platform. Here, we demonstrate a compliant Si substrate allowing defect-free epitaxial growth of lattice mismatched materials. The method is based on the deep patterning of the Si substrate to form micrometer-scale pillars and subsequent electrochemical porosification. The investigation of the epitaxial Ge crystalline quality by X-ray diffraction, transmission electron microscopy and etch-pits counting demonstrates the full elastic relaxation of defect-free microcrystals. The achievement of dislocation free heteroepitaxy relies on the interplay between elastic deformation of the porous micropillars, set under stress by the lattice mismatch between Ge and Si, and on the diffusion of Ge into the mesoporous patterned substrate attenuating the mismatch strain at the Ge/Si interface. Many complex devices rely on epitaxial growth with high crystallinity and accurate composition. Here authors report epitaxial growth of Ge on deep etched porous Si pillars to provide a fully compliant substrate enabling elastic relaxation of defect free Ge microcrystals.
Collapse
Affiliation(s)
- Alexandre Heintz
- grid.86715.3d0000 0000 9064 6198Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, QC J1K OA5 Canada ,grid.86715.3d0000 0000 9064 6198Laboratoire Nanotechnologies Nanosystèmes (LN2) —CNRS UMI-3463, Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, QC J1K OA5 Canada
| | - Bouraoui Ilahi
- grid.86715.3d0000 0000 9064 6198Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, QC J1K OA5 Canada ,grid.86715.3d0000 0000 9064 6198Laboratoire Nanotechnologies Nanosystèmes (LN2) —CNRS UMI-3463, Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, QC J1K OA5 Canada
| | - Alexandre Pofelski
- grid.25073.330000 0004 1936 8227Department of Materials Science and Engineering, McMaster University, Hamilton, ON L8S 4M1 Canada
| | - Gianluigi Botton
- grid.25073.330000 0004 1936 8227Department of Materials Science and Engineering, McMaster University, Hamilton, ON L8S 4M1 Canada ,grid.423571.60000 0004 0443 7584Canadian Light Source, 44 Innovation Boulevard, Saskatoon, SK S7N 2V3 Canada
| | - Gilles Patriarche
- Centre de Nanosciences et de Nanotechnologies – C2N, CNRS, Univ. Paris-Sud, Université Paris-Saclay, 91120 Palaiseau, France
| | - Andrea Barzaghi
- grid.4643.50000 0004 1937 0327L-NESS and Dipartimento di Fisica, Politecnico di Milano, Via Anzani 42, I-22100 Como, Italy
| | - Simon Fafard
- grid.86715.3d0000 0000 9064 6198Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, QC J1K OA5 Canada ,grid.86715.3d0000 0000 9064 6198Laboratoire Nanotechnologies Nanosystèmes (LN2) —CNRS UMI-3463, Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, QC J1K OA5 Canada
| | - Richard Arès
- grid.86715.3d0000 0000 9064 6198Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, QC J1K OA5 Canada ,grid.86715.3d0000 0000 9064 6198Laboratoire Nanotechnologies Nanosystèmes (LN2) —CNRS UMI-3463, Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, QC J1K OA5 Canada
| | - Giovanni Isella
- grid.4643.50000 0004 1937 0327L-NESS and Dipartimento di Fisica, Politecnico di Milano, Via Anzani 42, I-22100 Como, Italy
| | - Abderraouf Boucherif
- grid.86715.3d0000 0000 9064 6198Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, QC J1K OA5 Canada ,grid.86715.3d0000 0000 9064 6198Laboratoire Nanotechnologies Nanosystèmes (LN2) —CNRS UMI-3463, Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, QC J1K OA5 Canada
| |
Collapse
|
4
|
Cai Q, You H, Hou Q, Tao T, Xie Z, Cao X, Liu B, Chen D, Lu H, Zhang R, Zheng Y. Self-Assembly Nanopillar/Superlattice Hierarchical Structure: Boosting AlGaN Crystalline Quality and Achieving High-Performance Ultraviolet Avalanche Photodetector. ACS APPLIED MATERIALS & INTERFACES 2022; 14:33525-33537. [PMID: 35830680 DOI: 10.1021/acsami.2c06417] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
As a burgeoning wide-band gap semiconductor material, AlxGa1-xN alloy has attracted great attention for versatile applications due to its superior properties. However, its poor crystalline quality has restricted the employment of AlGaN on electronic devices for a long time. Herein, we proposed a nanopillar/superlattice hierarchical structure for AlGaN epitaxy to boost the crystalline quality. The scale-controllable AlN nanopillar template is fabricated from a nickel self-assembly process. AlGaN initiates the epitaxial laterally overgrowth mode based on the nanopatterned template. In addition, the AlxGa1-xN/AlyGa1-yN superlattice structure could effectively block the propagation of threading dislocation segments. The kinetics of the dislocation and epitaxy process in the hierarchical structure is intuitively demonstrated and analyzed. Consequently, the dislocation density of AlGaN grown by this method is significantly reduced by more than 30 times compared to the AlN template. No threading dislocation segments were observed in the 4 μm TEM field of view. Moreover, based on the hierarchical structure, we also fabricated an AlGaN ultraviolet avalanche photodiode (APD). The APD exhibits superior performance, achieving a maximum gain of 1.3 × 105 and high responsivity of 1.46 A/W at 324 nm. The reliability of the nanopillar/superlattice AlGaN epitaxial procedure is anticipated to shed new light on the nitride semiconductor material, further bringing a breakthrough to wide-band gap electronic devices.
Collapse
Affiliation(s)
- Qing Cai
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Haifan You
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Qianyu Hou
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Tao Tao
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Zili Xie
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Xun Cao
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Bin Liu
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Dunjun Chen
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Hai Lu
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Rong Zhang
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
- Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, China
- Institute of Future Display Technology, Tan Kah Kee Innovation Laboratory, Xiamen 361102, China
| | - Youdou Zheng
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| |
Collapse
|
5
|
Chang H, Liu Z, Yang S, Gao Y, Shan J, Liu B, Sun J, Chen Z, Yan J, Liu Z, Wang J, Gao P, Li J, Liu Z, Wei T. Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode. LIGHT, SCIENCE & APPLICATIONS 2022; 11:88. [PMID: 35393405 PMCID: PMC8991230 DOI: 10.1038/s41377-022-00756-1] [Citation(s) in RCA: 15] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/12/2022] [Revised: 02/24/2022] [Accepted: 02/28/2022] [Indexed: 05/25/2023]
Abstract
The energy-efficient deep ultraviolet (DUV) optoelectronic devices suffer from critical issues associated with the poor quality and large strain of nitride material system caused by the inherent mismatch of heteroepitaxy. In this work, we have prepared the strain-free AlN film with low dislocation density (DD) by graphene (Gr)-driving strain-pre-store engineering and a unique mechanism of strain-relaxation in quasi-van der Waals (QvdW) epitaxy is presented. The DD in AlN epilayer with Gr exhibits an anomalous sawtooth-like evolution during the whole epitaxy process. Gr can help to enable the annihilation of the dislocations originated from the interface between AlN and Gr/sapphire by impelling a lateral two-dimensional growth mode. Remarkably, it can induce AlN epilayer to pre-store sufficient tensile strain during the early growth stage and thus compensate the compressive strain caused by hetero-mismatch. Therefore, the low-strain state of the DUV light-emitting diode (DUV-LED) epitaxial structure is realized on the strain-free AlN template with Gr. Furthermore, the DUV-LED with Gr demonstrate 2.1 times enhancement of light output power and a better stability of luminous wavelength compared to that on bare sapphire. An in-depth understanding of this work reveals diverse beneficial impacts of Gr on nitride growth and provides a novel strategy of relaxing the vital requirements of hetero-mismatch in conventional heteroepitaxy.
Collapse
Affiliation(s)
- Hongliang Chang
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Zhetong Liu
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, China
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China
- Beijing graphene institute (BGI), 100095, Beijing, China
- Academy for Advanced Interdisciplinary Studies, Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, 100871, Beijing, China
| | - Shenyuan Yang
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, China
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China
| | - Yaqi Gao
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Jingyuan Shan
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, China
- Beijing graphene institute (BGI), 100095, Beijing, China
| | - Bingyao Liu
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, China
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China
- Beijing graphene institute (BGI), 100095, Beijing, China
- Academy for Advanced Interdisciplinary Studies, Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, 100871, Beijing, China
| | - Jingyu Sun
- Beijing graphene institute (BGI), 100095, Beijing, China
| | - Zhaolong Chen
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, China
- Beijing graphene institute (BGI), 100095, Beijing, China
| | - Jianchang Yan
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Zhiqiang Liu
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Junxi Wang
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Peng Gao
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, China.
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China.
- Beijing graphene institute (BGI), 100095, Beijing, China.
- Academy for Advanced Interdisciplinary Studies, Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, 100871, Beijing, China.
| | - Jinmin Li
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, China.
| | - Zhongfan Liu
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, China.
- Beijing graphene institute (BGI), 100095, Beijing, China.
| | - Tongbo Wei
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, China.
| |
Collapse
|
6
|
Xiao Y, Vanka S, Pham TA, Dong WJ, Sun Y, Liu X, Navid IA, Varley JB, Hajibabaei H, Hamann TW, Ogitsu T, Mi Z. Crystallographic Effects of GaN Nanostructures in Photoelectrochemical Reaction. NANO LETTERS 2022; 22:2236-2243. [PMID: 35258977 DOI: 10.1021/acs.nanolett.1c04220] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Tuning the surface structure of the photoelectrode provides one of the most effective ways to address the critical challenges in artificial photosynthesis, such as efficiency, stability, and product selectivity, for which gallium nitride (GaN) nanowires have shown great promise. In the GaN wurtzite crystal structure, polar, semipolar, and nonpolar planes coexist and exhibit very different structural, electronic, and chemical properties. Here, through a comprehensive study of the photoelectrochemical performance of GaN photocathodes in the form of films and nanowires with controlled surface polarities we show that significant photoelectrochemical activity can be observed when the nonpolar surfaces are exposed in the electrolyte, whereas little or no activity is measured from the GaN polar c-plane surfaces. The atomic origin of this fundamental difference is further revealed through density functional theory calculations. This study provides guideline on crystal facet engineering of metal-nitride photo(electro)catalysts for a broad range of artificial photosynthesis chemical reactions.
Collapse
Affiliation(s)
- Yixin Xiao
- Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, 1301 Beal Avenue, Ann Arbor, Michigan 48109, United States
| | - Srinivas Vanka
- Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, 1301 Beal Avenue, Ann Arbor, Michigan 48109, United States
| | - Tuan Anh Pham
- Lawrence Livermore National Laboratory, Livermore, California 94550, United States
| | - Wan Jae Dong
- Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, 1301 Beal Avenue, Ann Arbor, Michigan 48109, United States
| | - Yi Sun
- Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, 1301 Beal Avenue, Ann Arbor, Michigan 48109, United States
| | - Xianhe Liu
- Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, 1301 Beal Avenue, Ann Arbor, Michigan 48109, United States
| | - Ishtiaque Ahmed Navid
- Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, 1301 Beal Avenue, Ann Arbor, Michigan 48109, United States
| | - Joel B Varley
- Lawrence Livermore National Laboratory, Livermore, California 94550, United States
| | - Hamed Hajibabaei
- Department of Chemistry, Michigan State University, 578 S. Shaw Lane, East Lansing, Michigan 48824, United States
| | - Thomas W Hamann
- Department of Chemistry, Michigan State University, 578 S. Shaw Lane, East Lansing, Michigan 48824, United States
| | - Tadashi Ogitsu
- Lawrence Livermore National Laboratory, Livermore, California 94550, United States
| | - Zetian Mi
- Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, 1301 Beal Avenue, Ann Arbor, Michigan 48109, United States
| |
Collapse
|
7
|
Zhang S, Liu B, Ren F, Yin Y, Wang Y, Chen Z, Jiang B, Liu B, Liu Z, Sun J, Liang M, Yan J, Wei T, Yi X, Wang J, Li J, Gao P, Liu Z, Liu Z. Graphene-Nanorod Enhanced Quasi-Van Der Waals Epitaxy for High Indium Composition Nitride Films. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2100098. [PMID: 33788402 DOI: 10.1002/smll.202100098] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/07/2021] [Revised: 02/21/2021] [Indexed: 06/12/2023]
Abstract
The nitride films with high indium (In) composition play a crucial role in the fabrication of In-rich InGaN-based optoelectronic devices. However, a major limitation is In incorporation requiring a low temperature during growth at the expense of nitride dissociation. Here, to overcome this limitation, a strain-modulated growth method, namely the graphene (Gr)-nanorod (NR) enhanced quasi-van der Waals epitaxy, is proposed to increase the In composition in InGaN alloy. The lattice transparency of Gr enables constraint of in-plane orientation of nitride film and epitaxial relationships at the heterointerface. The Gr interlayer together with NRs buffer layer substantially reduces the stress of the GaN film by 74.4%, from 0.9 to 0.23 GPa, and thus increases the In incorporation by 30.7%. The first principles calculations confirm that the release of strain accounts for the dramatic improvement. The photoluminescence peak of multiple quantum wells shifts from 461 to 497 nm and the functionally small-sized cyan light-emitting diodes of 7 × 9 mil2 are demonstrated. These findings provide an efficient approach for the growth of In-rich InGaN film and extend the applications of nitrides in advanced optoelectronic, photovoltaic, and thermoelectric devices.
Collapse
Affiliation(s)
- Shuo Zhang
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Bingyao Liu
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
- Beijing Graphene Institute (BGI), Beijing, 100095, China
| | - Fang Ren
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yue Yin
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yunyu Wang
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhaolong Chen
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
- Beijing Graphene Institute (BGI), Beijing, 100095, China
| | - Bei Jiang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Bingzhi Liu
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
- Beijing Graphene Institute (BGI), Beijing, 100095, China
- College of Energy, Soochow Institute for Energy and Materials Innovations, Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies, Soochow University, Suzhou, 215006, China
| | - Zhetong Liu
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
- Beijing Graphene Institute (BGI), Beijing, 100095, China
| | - Jingyu Sun
- Beijing Graphene Institute (BGI), Beijing, 100095, China
- College of Energy, Soochow Institute for Energy and Materials Innovations, Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies, Soochow University, Suzhou, 215006, China
| | - Meng Liang
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jianchang Yan
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tongbo Wei
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xiaoyan Yi
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Junxi Wang
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jinmin Li
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Peng Gao
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China
- Beijing Graphene Institute (BGI), Beijing, 100095, China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China
| | - Zhongfan Liu
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
- Beijing Graphene Institute (BGI), Beijing, 100095, China
| | - Zhiqiang Liu
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| |
Collapse
|
8
|
Cai Q, You H, Guo H, Wang J, Liu B, Xie Z, Chen D, Lu H, Zheng Y, Zhang R. Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays. LIGHT, SCIENCE & APPLICATIONS 2021; 10:94. [PMID: 33931580 PMCID: PMC8087770 DOI: 10.1038/s41377-021-00527-4] [Citation(s) in RCA: 53] [Impact Index Per Article: 17.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/14/2020] [Revised: 03/30/2021] [Accepted: 03/31/2021] [Indexed: 05/22/2023]
Abstract
Solar-blind ultraviolet (UV) photodetectors (PDs) have attracted tremendous attention in the environmental, industrial, military, and biological fields. As a representative III-nitride material, AlGaN alloys have broad development prospects in the field of solar-blind detection due to their superior properties, such as tunable wide bandgaps for intrinsic UV detection. In recent decades, a variety of AlGaN-based PDs have been developed to achieve high-precision solar-blind UV detection. As integrated optoelectronic technology advances, AlGaN-based focal plane arrays (FPAs) are manufactured and exhibit outstanding solar-blind imaging capability. Considering the rapid development of AlGaN detection techniques, this paper comprehensively reviews the progress on AlGaN-based solar-blind UV PDs and FPAs. First, the basic physical properties of AlGaN are presented. The epitaxy and p-type doping problems of AlGaN alloys are then discussed. Diverse PDs, including photoconductors and Schottky, metal-semiconductor-metal (MSM), p-i-n, and avalanche photodiodes (APDs), are demonstrated, and the physical mechanisms are analyzed to improve device performance. Additionally, this paper summarizes imaging technologies used with AlGaN FPAs in recent years. Benefiting from the development of AlGaN materials and optoelectronic devices, solar-blind UV detection technology is greeted with significant revolutions. Summarizing recent advances in the processing and properties of AlGaN-based solar-blind UV PDs and FPAs as well as AlGaN growth and doping techniques.
Collapse
Affiliation(s)
- Qing Cai
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China
| | - Haifan You
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China
| | - Hui Guo
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China
| | - Jin Wang
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China
| | - Bin Liu
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China
| | - Zili Xie
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China
| | - Dunjun Chen
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China
| | - Hai Lu
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China
| | - Youdou Zheng
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China
| | - Rong Zhang
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China.
- Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen, 361005, China.
- Institute of Future Display Technology, Tan Kah Kee Innovation Laboratory, Xiamen, 361102, China.
| |
Collapse
|
9
|
Liu S, Luo W, Li D, Yuan Y, Tong W, Kang J, Wang Y, Li D, Rong X, Wang T, Chen Z, Li Y, Wang H, Wang W, Hoo J, Yan L, Guo S, Shen B, Cong Z, Wang X. Sec-Eliminating the SARS-CoV-2 by AlGaN Based High Power Deep Ultraviolet Light Source. ADVANCED FUNCTIONAL MATERIALS 2021; 31:2008452. [PMID: 33349747 PMCID: PMC7744859 DOI: 10.1002/adfm.202008452] [Citation(s) in RCA: 28] [Impact Index Per Article: 9.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/04/2020] [Revised: 11/08/2020] [Indexed: 05/12/2023]
Abstract
The world-wide spreading of coronavirus disease (COVID-19) has greatly shaken human society, thus effective and fast-speed methods of non-daily-life-disturbance sterilization have become extremely significant. In this work, by fully benefitting from high-quality AlN template (with threading dislocation density as low as ≈6×108 cm-2) as well as outstanding deep ultraviolet (UVC-less than 280 nm) light-emitting diodes (LEDs) structure design and epitaxy optimization, high power UVC LEDs and ultra-high-power sterilization irradiation source are achieved. Moreover, for the first time, a result in which a fast and complete elimination of SARS-CoV-2 (the virus causes COVID-19) within only 1 s is achieved by the nearly whole industry-chain-covered product. These results advance the promising potential in UVC-LED disinfection particularly in the shadow of COVID-19.
Collapse
Affiliation(s)
- Shangfeng Liu
- State Key Laboratory of Artificial Microstructure and Mesoscopic PhysicsSchool of Physics, Nano‐Optoelectronics Frontier Center of Ministry of Education (NFC‐MOE)Peking UniversityBeijing100871China
| | - Wei Luo
- Songshan Lake Materials LaboratoryDongguanGuangdong523808China
| | - Dan Li
- Institute of Laboratory Animal Science (ILAS)Chinese Academy of Medical SciencesBeijing100021China
| | - Ye Yuan
- Songshan Lake Materials LaboratoryDongguanGuangdong523808China
| | - Wei Tong
- Institute of Laboratory Animal Science (ILAS)Chinese Academy of Medical SciencesBeijing100021China
| | - Junjie Kang
- Songshan Lake Materials LaboratoryDongguanGuangdong523808China
| | - Yixin Wang
- State Key Laboratory of Artificial Microstructure and Mesoscopic PhysicsSchool of Physics, Nano‐Optoelectronics Frontier Center of Ministry of Education (NFC‐MOE)Peking UniversityBeijing100871China
| | - Duo Li
- State Key Laboratory of Artificial Microstructure and Mesoscopic PhysicsSchool of Physics, Nano‐Optoelectronics Frontier Center of Ministry of Education (NFC‐MOE)Peking UniversityBeijing100871China
| | - Xin Rong
- State Key Laboratory of Artificial Microstructure and Mesoscopic PhysicsSchool of Physics, Nano‐Optoelectronics Frontier Center of Ministry of Education (NFC‐MOE)Peking UniversityBeijing100871China
| | - Tao Wang
- State Key Laboratory of Artificial Microstructure and Mesoscopic PhysicsSchool of Physics, Nano‐Optoelectronics Frontier Center of Ministry of Education (NFC‐MOE)Peking UniversityBeijing100871China
| | - Zhaoying Chen
- State Key Laboratory of Artificial Microstructure and Mesoscopic PhysicsSchool of Physics, Nano‐Optoelectronics Frontier Center of Ministry of Education (NFC‐MOE)Peking UniversityBeijing100871China
| | - Yongde Li
- Songshan Lake Materials LaboratoryDongguanGuangdong523808China
| | - Houjin Wang
- Songshan Lake Materials LaboratoryDongguanGuangdong523808China
| | - Weiyun Wang
- Songshan Lake Materials LaboratoryDongguanGuangdong523808China
| | - Jason Hoo
- Advanced Micro‐Fabrication Equipment Inc.Shanghai201201China
| | - Long Yan
- Advanced Micro‐Fabrication Equipment Inc.Shanghai201201China
| | - Shiping Guo
- Advanced Micro‐Fabrication Equipment Inc.Shanghai201201China
| | - Bo Shen
- State Key Laboratory of Artificial Microstructure and Mesoscopic PhysicsSchool of Physics, Nano‐Optoelectronics Frontier Center of Ministry of Education (NFC‐MOE)Peking UniversityBeijing100871China
| | - Zhe Cong
- Institute of Laboratory Animal Science (ILAS)Chinese Academy of Medical SciencesBeijing100021China
| | - Xinqiang Wang
- State Key Laboratory of Artificial Microstructure and Mesoscopic PhysicsSchool of Physics, Nano‐Optoelectronics Frontier Center of Ministry of Education (NFC‐MOE)Peking UniversityBeijing100871China
- Songshan Lake Materials LaboratoryDongguanGuangdong523808China
| |
Collapse
|
10
|
Modeling and Epitaxial Growth of Homogeneous Long-InGaN Nanowire Structures. NANOMATERIALS 2020; 11:nano11010009. [PMID: 33374536 PMCID: PMC7822199 DOI: 10.3390/nano11010009] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/27/2020] [Revised: 12/17/2020] [Accepted: 12/21/2020] [Indexed: 11/25/2022]
Abstract
One-dimensional nanowires based on Group III-nitride materials are emerging as one of the most promising structures for applications of light-emitting diodes (LEDs), laser diodes (LDs), solar cells, and photocatalysts. However, leading to the so-called “green gap” in photonics, the fabrication of high concentration indium gallium nitride (InGaN) and long-InGaN structures remains still challenging. In this study, we performed simulations for structural modeling of uniform temperature distribution in a nanowire epitaxy, and have successfully developed high-concentration InGaN and long-InGaN nanowire heterostructures on silicon (Si) substrate using molecular beam epitaxy (MBE) system. From scanning electron microscope (SEM) and transmission electron microscope (TEM) results, it was confirmed that the various doped-InGaN nanowire structures show much higher crystal quality compared to conventional nanowire structures. By introducing a new three-step modulated growth technique, the n-/p-InGaN active regions were greatly increased and the optical properties were also dramatically improved due to reduced phase separation. In addition, a multi-band p-InGaN/GaN heterostructure was successfully fabricated with the core–shell nanowire structures, which enable the emission of light in the entire visible spectral range, and protect the InGaN surface from surface recombination. This paper offers important insight into the design and epitaxial growth of InGaN nanowire heterostructures.
Collapse
|
11
|
Giubileo F, Bartolomeo AD, Zhong Y, Zhao S, Passacantando M. Field emission from AlGaN nanowires with low turn-on field. NANOTECHNOLOGY 2020; 31:475702. [PMID: 32885788 DOI: 10.1088/1361-6528/abaf22] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We fabricate AlGaN nanowires by molecular beam epitaxy and we investigate their field emission properties by means of an experimental setup using nano-manipulated tungsten tips as electrodes, inside a scanning electron microscope. The tip-shaped anode gives access to local properties, and allows collecting electrons emitted from areas as small as 1 µm2. The field emission characteristics are analysed in the framework of Fowler-Nordheim theory and we find a field enhancement factor as high as β = 556 and a minimum turn-on field [Formula: see text] = 17 V µm-1 for a cathode-anode separation distance [Formula: see text] = 500 nm. We show that for increasing separation distance, [Formula: see text] increases up to about 35 V µm-1 and β decreases to ∼100 at [Formula: see text] = 1600 nm. We also demonstrate the time stability of the field emission current from AlGaN nanowires for several minutes. Finally, we explain the observation of modified slope of the Fowler-Nordheim plots at low fields in terms of non-homogeneous field enhancement factors due to the presence of protruding emitters.
Collapse
Affiliation(s)
- Filippo Giubileo
- CNR-SPIN Salerno, via Giovanni Paolo II n. 132, Fisciano 84084, Italy
| | | | | | | | | |
Collapse
|
12
|
Seo MH, Yoo JY, Jo MS, Yoon JB. Geometrically Structured Nanomaterials for Nanosensors, NEMS, and Nanosieves. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1907082. [PMID: 32253800 DOI: 10.1002/adma.201907082] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/29/2019] [Revised: 12/18/2019] [Indexed: 06/11/2023]
Abstract
Recently, geometrically structured nanomaterials have received great attention due to their unique physical and chemical properties, which originate from the geometric variation in such materials. Indeed, the use of various geometrically structured nanomaterials has been actively reported in enhanced-performance devices in a wide range of applications. Recent significant progress in the development of geometrically structured nanomaterials and associated devices is summarized. First, a brief introduction of advanced nanofabrication methods that enable the fabrication of various geometrically structured nanomaterials is given, and then the performance enhancements achieved in devices utilizing these nanomaterials, namely, i) physical and gas nanosensors, ii) nanoelectromechanical devices, and iii) nanosieves are described. For the device applications, a systematic summary of their structures, working mechanisms, fabrication methods, and output performance is provided. Particular focus is given to how device performance can be enhanced through the geometric structures of the nanomaterials. Finally, perspectives on the development of novel nanomaterial structures and associated devices are presented.
Collapse
Affiliation(s)
- Min-Ho Seo
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
- Center for Bio-Integrated Electronics, Northwestern University, Evanston, IL, 60208, USA
| | - Jae-Young Yoo
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Min-Seung Jo
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Jun-Bo Yoon
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| |
Collapse
|
13
|
Chang H, Chen Z, Liu B, Yang S, Liang D, Dou Z, Zhang Y, Yan J, Liu Z, Zhang Z, Wang J, Li J, Liu Z, Gao P, Wei T. Quasi-2D Growth of Aluminum Nitride Film on Graphene for Boosting Deep Ultraviolet Light-Emitting Diodes. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:2001272. [PMID: 32775172 PMCID: PMC7404167 DOI: 10.1002/advs.202001272] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/06/2020] [Revised: 05/11/2020] [Indexed: 05/30/2023]
Abstract
Efficient and low-cost production of high-quality aluminum nitride (AlN) films during heteroepitaxy is the key for the development of deep ultraviolet light-emitting diodes (DUV-LEDs). Here, the quasi-2D growth of high-quality AlN film with low strain and low dislocation density on graphene (Gr) is presented and a high-performance 272 nm DUV-LED is demonstrated. Guided by first-principles calculations, it is found that AlN grown on Gr prefers lateral growth both energetically and kinetically, thereby resulting in a Gr-driven quasi-2D growth mode. The strong lateral growth mode enables most of dislocations to annihilate each other at the AlN/Gr interface, and therefore the AlN epilayer can quickly coalesce and flatten the nanopatterned sapphire substrate. Based on the high quality and low strain of AlN film grown on Gr, the as-fabricated 272 nm DUV-LED shows a 22% enhancement of output power than that with low-temperature AlN buffer, following a negligible wavelength shift under high current. This facile strategy opens a pathway to drastically improve the performance of DUV-LEDs.
Collapse
Affiliation(s)
- Hongliang Chang
- Research and Development Center for Semiconductor Lighting TechnologyInstitute of SemiconductorsChinese Academy of SciencesBeijing100083China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049China
| | - Zhaolong Chen
- Center for Nanochemistry (CNC)Beijing Science and Engineering Center for NanocarbonsCollege of Chemistry and Molecular EngineeringPeking UniversityBeijing100871China
- Beijing Graphene Institute (BGI)Beijing100095China
| | - Bingyao Liu
- Beijing Graphene Institute (BGI)Beijing100095China
- Electron Microscopy Laboratoryand International Center for Quantum MaterialsSchool of PhysicsPeking UniversityBeijing100871China
| | - Shenyuan Yang
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049China
- State Key Laboratory of Superlattices and MicrostructuresInstitute of SemiconductorsChinese Academy of SciencesBeijing100083China
| | - Dongdong Liang
- Research and Development Center for Semiconductor Lighting TechnologyInstitute of SemiconductorsChinese Academy of SciencesBeijing100083China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049China
| | - Zhipeng Dou
- Beijing Graphene Institute (BGI)Beijing100095China
- Electron Microscopy Laboratoryand International Center for Quantum MaterialsSchool of PhysicsPeking UniversityBeijing100871China
| | - Yonghui Zhang
- School of Electronics and Information EngineeringHebei University of TechnologyTianjin300401China
| | - Jianchang Yan
- Research and Development Center for Semiconductor Lighting TechnologyInstitute of SemiconductorsChinese Academy of SciencesBeijing100083China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049China
| | - Zhiqiang Liu
- Research and Development Center for Semiconductor Lighting TechnologyInstitute of SemiconductorsChinese Academy of SciencesBeijing100083China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049China
| | - Zihui Zhang
- School of Electronics and Information EngineeringHebei University of TechnologyTianjin300401China
| | - Junxi Wang
- Research and Development Center for Semiconductor Lighting TechnologyInstitute of SemiconductorsChinese Academy of SciencesBeijing100083China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049China
| | - Jinmin Li
- Research and Development Center for Semiconductor Lighting TechnologyInstitute of SemiconductorsChinese Academy of SciencesBeijing100083China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049China
| | - Zhongfan Liu
- Center for Nanochemistry (CNC)Beijing Science and Engineering Center for NanocarbonsCollege of Chemistry and Molecular EngineeringPeking UniversityBeijing100871China
- Beijing Graphene Institute (BGI)Beijing100095China
| | - Peng Gao
- Electron Microscopy Laboratoryand International Center for Quantum MaterialsSchool of PhysicsPeking UniversityBeijing100871China
- Collaborative Innovation Center of Quantum MatterBeijing100871China
| | - Tongbo Wei
- Research and Development Center for Semiconductor Lighting TechnologyInstitute of SemiconductorsChinese Academy of SciencesBeijing100083China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049China
| |
Collapse
|
14
|
Ra YH, Lee CR. Core-Shell Tunnel Junction Nanowire White-Light-Emitting Diode. NANO LETTERS 2020; 20:4162-4168. [PMID: 32105489 DOI: 10.1021/acs.nanolett.0c00420] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
We have demonstrated a new class of phosphor-free white LEDs with the use of tunnel junction structure in nonpolar core-shell InGaN nanowires. It is confirmed that the tunnel junction based nanowire LEDs can eliminate the use of the resistive p-GaN:Mg contact layer, leading to significantly enhanced hole injection and dramatically reduced voltage loss. The nonpolar core-shell nanowire heterostructure showed the enhanced carrier injection efficiency through the widened shell n-GaN contact area. The TEM analysis verified that the core-shell Al tunnel junction layers were uniformly grown on nonpolar surfaces of the GaN wurtzite crystal nanowire structure. We have also showed the monolithic integration of multiple-color emission on a single chip by using the multiple-stacked tunnel junction core-shell nanowire heterostructure. Compared to the conventional film based quantum well LEDs, the demonstrated nonpolar core-shell tunnel junction nanowire LEDs will be a very promising candidate for future solid-state lighting applications as well as phosphor-free white LEDs.
Collapse
Affiliation(s)
- Yong-Ho Ra
- Optic & Electronic Component Material Center, Korea Institute of Ceramic Engineering & Technology, Jinju 52851, Republic of Korea
| | - Cheul-Ro Lee
- School of Advanced Materials Engineering, Engineering College, Chonbuk National University, Deokjin-dong 664-14, Jeonju 54896, Republic of Korea
| |
Collapse
|
15
|
Sheikhi M, Dai Y, Cui M, Li L, Liu J, Lan W, Jiang R, Guo W, Chee KW, Ye J. On the Luminescence Properties and Surface Passivation Mechanism of III- and N-Polar Nanopillar Ultraviolet Multiple-Quantum-Well Light Emitting Diodes. MICROMACHINES 2020; 11:mi11060572. [PMID: 32516889 PMCID: PMC7345201 DOI: 10.3390/mi11060572] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/06/2019] [Revised: 12/05/2019] [Accepted: 12/17/2019] [Indexed: 11/21/2022]
Abstract
The non-centrosymmetricity of III-nitride wurtzite crystals enables metal or nitrogen polarity with dramatically different surface energies and optical properties. In this work, III-polar and N-polar nanostructured ultraviolet multiple quantum wells (UV-MQWs) were fabricated by nanosphere lithography and reactive ion etching. The influence of KOH etching and rapid thermal annealing treatments on the luminescence behaviors were carefully investigated, showing a maximum enhancement factor of 2.4 in emission intensity for III-polar nanopillars, but no significant improvement for N-polar nanopillars. The discrepancy in optical behaviors between III- and N-polar nanopillar MQWs stems from carrier localization in III-polar surface, as indium compositional inhomogeneity is discovered by cathodoluminescence mapping, and a defect-insensitive emission property is observed. Therefore, non-radiative recombination centers such as threading dislocations or point defects are unlikely to influence the optical property even after post-fabrication surface treatment. This work lays solid foundation for future study on the effects of surface treatment on III- and N-polar nanostructured light-emitting-diodes and provides a promising route for the design of nanostructure photonic devices.
Collapse
Affiliation(s)
- Moheb Sheikhi
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China; (M.S.); (Y.D.); (M.C.); (L.L.); (R.J.); (J.Y.)
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yijun Dai
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China; (M.S.); (Y.D.); (M.C.); (L.L.); (R.J.); (J.Y.)
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Mei Cui
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China; (M.S.); (Y.D.); (M.C.); (L.L.); (R.J.); (J.Y.)
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Liang Li
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China; (M.S.); (Y.D.); (M.C.); (L.L.); (R.J.); (J.Y.)
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jianzhe Liu
- Zhe Jiang Bright Semiconductor Technology Co., Ltd., Jinhua 321016, China; (J.L.); (W.L.)
| | - Wenan Lan
- Zhe Jiang Bright Semiconductor Technology Co., Ltd., Jinhua 321016, China; (J.L.); (W.L.)
| | - Rongrong Jiang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China; (M.S.); (Y.D.); (M.C.); (L.L.); (R.J.); (J.Y.)
| | - Wei Guo
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China; (M.S.); (Y.D.); (M.C.); (L.L.); (R.J.); (J.Y.)
- University of Chinese Academy of Sciences, Beijing 100049, China
- Correspondence: (W.G.); (K.W.A.C.)
| | - Kuan W.A. Chee
- Hefei National Laboratory for Physical Sciences at Microscale, and Department of Physics, University of Science and Technology of China, Hefei 230026, China
- Laser Research Institute, Shandong Academy of Sciences, Qingdao 226100, China
- Correspondence: (W.G.); (K.W.A.C.)
| | - Jichun Ye
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China; (M.S.); (Y.D.); (M.C.); (L.L.); (R.J.); (J.Y.)
- University of Chinese Academy of Sciences, Beijing 100049, China
| |
Collapse
|
16
|
Review of GaN Thin Film and Nanorod Growth Using Magnetron Sputter Epitaxy. APPLIED SCIENCES-BASEL 2020. [DOI: 10.3390/app10093050] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
Magnetron sputter epitaxy (MSE) offers several advantages compared to alternative GaN epitaxy growth methods, including mature sputtering technology, the possibility for very large area deposition, and low-temperature growth of high-quality electronic-grade GaN. In this article, we review the basics of reactive sputtering for MSE growth of GaN using a liquid Ga target. Various target biasing schemes are discussed, including direct current (DC), radio frequency (RF), pulsed DC, and high-power impulse magnetron sputtering (HiPIMS). Examples are given for MSE-grown GaN thin films with material quality comparable to those grown using alternative methods such as molecular-beam epitaxy (MBE), metal–organic chemical vapor deposition (MOCVD), and hydride vapor phase epitaxy (HVPE). In addition, successful GaN doping and the fabrication of practical devices have been demonstrated. Beyond the planar thin film form, MSE-grown GaN nanorods have also been demonstrated through self-assembled and selective area growth (SAG) method. With better understanding in process physics and improvements in material quality, MSE is expected to become an important technology for the growth of GaN.
Collapse
|
17
|
AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects. MICROMACHINES 2020; 11:mi11020125. [PMID: 31979274 PMCID: PMC7074201 DOI: 10.3390/mi11020125] [Citation(s) in RCA: 30] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/21/2019] [Revised: 01/19/2020] [Accepted: 01/22/2020] [Indexed: 12/12/2022]
Abstract
In this paper, we discuss the recent progress made in aluminum gallium nitride (AlGaN) nanowire ultraviolet (UV) light-emitting diodes (LEDs). The AlGaN nanowires used for such LED devices are mainly grown by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD); and various foreign substrates/templates have been investigated. Devices on Si so far exhibit the best performance, whereas devices on metal and graphene have also been investigated to mitigate various limitations of Si substrate, e.g., the UV light absorption. Moreover, patterned growth techniques have also been developed to grow AlGaN nanowire UV LED structures, in order to address issues with the spontaneously formed nanowires. Furthermore, to reduce the quantum confined Stark effect (QCSE), nonpolar AlGaN nanowire UV LEDs exploiting the nonpolar nanowire sidewalls have been demonstrated. With these recent developments, the prospects, together with the general challenges of AlGaN nanowire UV LEDs, are discussed in the end.
Collapse
|
18
|
Ra YH, Rashid RT, Liu X, Sadaf SM, Mashooq K, Mi Z. An electrically pumped surface-emitting semiconductor green laser. SCIENCE ADVANCES 2020; 6:eaav7523. [PMID: 31921999 PMCID: PMC6941916 DOI: 10.1126/sciadv.aav7523] [Citation(s) in RCA: 19] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/16/2018] [Accepted: 10/29/2019] [Indexed: 05/22/2023]
Abstract
Surface-emitting semiconductor lasers have been widely used in data communications, sensing, and recently in Face ID and augmented reality glasses. Here, we report the first achievement of an all-epitaxial, distributed Bragg reflector (DBR)-free electrically injected surface-emitting green laser by exploiting the photonic band edge modes formed in dislocation-free gallium nitride nanocrystal arrays, instead of using conventional DBRs. The device operates at ~523 nm and exhibits a threshold current of ~400 A/cm2, which is over one order of magnitude lower compared to previously reported blue laser diodes. Our studies open a new paradigm for developing low-threshold surface-emitting laser diodes from the ultraviolet to the deep visible (~200 to 600 nm), wherein the device performance is no longer limited by the lack of high-quality DBRs, large lattice mismatch, and substrate availability.
Collapse
Affiliation(s)
- Yong-Ho Ra
- Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada
- Optic and Electronic Component Material Center, Korea Institute of Ceramic Engineering and Technology, Jinju, Republic of Korea
| | - Roksana Tonny Rashid
- Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada
| | - Xianhe Liu
- Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada
- Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109, USA
| | - Sharif Md. Sadaf
- Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada
- Advanced Electronics and Photonics, National Research Council Canada, Ottawa K1A 0R6, Canada
| | - Kishwar Mashooq
- Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109, USA
| | - Zetian Mi
- Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada
- Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109, USA
- Corresponding author.
| |
Collapse
|
19
|
Uprooting defects to enable high-performance III-V optoelectronic devices on silicon. Nat Commun 2019; 10:4322. [PMID: 31541107 PMCID: PMC6754402 DOI: 10.1038/s41467-019-12353-9] [Citation(s) in RCA: 30] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/17/2018] [Accepted: 08/15/2019] [Indexed: 11/09/2022] Open
Abstract
The monolithic integration of III-V compound semiconductor devices with silicon presents physical and technological challenges, linked to the creation of defects during the deposition process. Herein, a new defect elimination strategy in highly mismatched heteroepitaxy is demonstrated to achieve a ultra-low dislocation density, epi-ready Ge/Si virtual substrate on a wafer scale, using a highly scalable process. Dislocations are eliminated from the epilayer through dislocation-selective electrochemical deep etching followed by thermal annealing, which creates nanovoids that attract dislocations, facilitating their subsequent annihilation. The averaged dislocation density is reduced by over three orders of magnitude, from ~108 cm-2 to a lower-limit of ~104 cm-2 for 1.5 µm thick Ge layer. The optical properties indicate a strong enhancement of luminescence efficiency in GaAs grown on this virtual substrate. Collectively, this work demonstrates the promise for transfer of this technology to industrial-scale production of integrated photonic and optoelectronic devices on Si platforms in a cost-effective way.
Collapse
|
20
|
Abstract
Semiconductor nanowires have attracted extensive interest as one of the best-defined classes of nanoscale building blocks for the bottom-up assembly of functional electronic and optoelectronic devices over the past two decades. The article provides a comprehensive review of the continuing efforts in exploring semiconductor nanowires for the assembly of functional nanoscale electronics and macroelectronics. Specifically, we start with a brief overview of the synthetic control of various semiconductor nanowires and nanowire heterostructures with precisely controlled physical dimension, chemical composition, heterostructure interface, and electronic properties to define the material foundation for nanowire electronics. We then summarize a series of assembly strategies developed for creating well-ordered nanowire arrays with controlled spatial position, orientation, and density, which are essential for constructing increasingly complex electronic devices and circuits from synthetic semiconductor nanowires. Next, we review the fundamental electronic properties and various single nanowire transistor concepts. Combining the designable electronic properties and controllable assembly approaches, we then discuss a series of nanoscale devices and integrated circuits assembled from nanowire building blocks, as well as a unique design of solution-processable nanowire thin-film transistors for high-performance large-area flexible electronics. Last, we conclude with a brief perspective on the standing challenges and future opportunities.
Collapse
Affiliation(s)
- Chuancheng Jia
- Department of Chemistry and Biochemistry , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Zhaoyang Lin
- Department of Chemistry and Biochemistry , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Yu Huang
- Department of Materials Science and Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States.,California NanoSystems Institute , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry , University of California, Los Angeles , Los Angeles , California 90095 , United States.,California NanoSystems Institute , University of California, Los Angeles , Los Angeles , California 90095 , United States
| |
Collapse
|
21
|
Wang Y, Yang L, Shi XL, Shi X, Chen L, Dargusch MS, Zou J, Chen ZG. Flexible Thermoelectric Materials and Generators: Challenges and Innovations. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1807916. [PMID: 31148307 DOI: 10.1002/adma.201807916] [Citation(s) in RCA: 144] [Impact Index Per Article: 28.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/07/2018] [Revised: 04/03/2019] [Indexed: 05/20/2023]
Abstract
The urgent need for ecofriendly, stable, long-lifetime power sources is driving the booming market for miniaturized and integrated electronics, including wearable and medical implantable devices. Flexible thermoelectric materials and devices are receiving increasing attention, due to their capability to convert heat into electricity directly by conformably attaching them onto heat sources. Polymer-based flexible thermoelectric materials are particularly fascinating because of their intrinsic flexibility, affordability, and low toxicity. There are other promising alternatives including inorganic-based flexible thermoelectrics that have high energy-conversion efficiency, large power output, and stability at relatively high temperature. Herein, the state-of-the-art in the development of flexible thermoelectric materials and devices is summarized, including exploring the fundamentals behind the performance of flexible thermoelectric materials and devices by relating materials chemistry and physics to properties. By taking insights from carrier and phonon transport, the limitations of high-performance flexible thermoelectric materials and the underlying mechanisms associated with each optimization strategy are highlighted. Finally, the remaining challenges in flexible thermoelectric materials are discussed in conclusion, and suggestions and a framework to guide future development are provided, which may pave the way for a bright future for flexible thermoelectric devices in the energy market.
Collapse
Affiliation(s)
- Yuan Wang
- Centre for Future Materials, University of Southern Queensland, Springfield Central, Queensland, 4300, Australia
| | - Lei Yang
- School of Materials Science and Engineering, Sichuan University, Chengdu, 610064, China
| | - Xiao-Lei Shi
- Materials Engineering, University of Queensland, Brisbane, Queensland, 4072, Australia
| | - Xun Shi
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Lidong Chen
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Matthew S Dargusch
- Materials Engineering, University of Queensland, Brisbane, Queensland, 4072, Australia
- Centre for Advanced Materials Processing and, Manufacturing (AMPAM), the University of Queensland, Brisbane, Queensland, 4072, Australia
| | - Jin Zou
- Materials Engineering, University of Queensland, Brisbane, Queensland, 4072, Australia
- Centre for Microscopy and Microanalysis, University of Queensland, Brisbane, Queensland, 4072, Australia
| | - Zhi-Gang Chen
- Centre for Future Materials, University of Southern Queensland, Springfield Central, Queensland, 4300, Australia
- Materials Engineering, University of Queensland, Brisbane, Queensland, 4072, Australia
| |
Collapse
|
22
|
Zhou N, Gan L, Yang R, Wang F, Li L, Chen Y, Li D, Zhai T. Nonlayered Two-Dimensional Defective Semiconductor γ-Ga 2S 3 toward Broadband Photodetection. ACS NANO 2019; 13:6297-6307. [PMID: 31082203 DOI: 10.1021/acsnano.9b00276] [Citation(s) in RCA: 30] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2023]
Abstract
Two-dimensional (2D) materials exhibit high sensitivity to structural defects due to the nature of interface-type materials, and the corresponding structural defects can effectively modulate their inherent properties in turn, giving them a wide application range in high-performance and functional devices. 2D γ-Ga2S3 is a defective semiconductor with outstanding optoelectronic properties. However, its controllable preparation has not been implemented yet, which hinders exploring its potential applications. In this work, we introduce nonlayered γ-Ga2S3 into the 2D materials family, which was successfully synthesized via the space-confined chemical vapor deposition method. Its intriguing defective structure are revealed by high-resolution transmission electron microscopy and temperature-dependent cathodoluminescence spectra, which endow the γ-Ga2S3-based device with a broad photoresponse from the ultraviolet to near-infrared region and excellent photoelectric conversion capability. Simultaneously, the device also exhibits excellent ultraviolet detection ability ( Rλ = 61.3 A W-1, Ion /Ioff = 851, EQE = 2.17× 104 %, D* = 1.52× 1010 Jones @350 nm), and relatively fast response (15 ms). This work provides a feasible way to fabricate ultrathin nonlayered materials and explore the potential applications of a 2D defective semiconductor in high-performance broadband photodetection, which also suggests a promising future of defect creation in optimizing photoelectric properties.
Collapse
Affiliation(s)
- Nan Zhou
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering , Huazhong University of Science and Technology , Wuhan 430074 , People's Republic of China
- School of Advanced Materials and Nanotechnology , Xidian University , Xi'an 710126 , People's Republic of China
| | - Lin Gan
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering , Huazhong University of Science and Technology , Wuhan 430074 , People's Republic of China
| | - Rusen Yang
- School of Advanced Materials and Nanotechnology , Xidian University , Xi'an 710126 , People's Republic of China
| | - Fakun Wang
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering , Huazhong University of Science and Technology , Wuhan 430074 , People's Republic of China
| | - Liang Li
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering , Huazhong University of Science and Technology , Wuhan 430074 , People's Republic of China
| | - Yicong Chen
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering , Huazhong University of Science and Technology , Wuhan 430074 , People's Republic of China
| | - Dehui Li
- School of Optical and Electronic Information, Wuhan National Laboratory for Optoelectronics , Huazhong University of Science and Technology , Wuhan 430074 , People's Republic of China
| | - Tianyou Zhai
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering , Huazhong University of Science and Technology , Wuhan 430074 , People's Republic of China
| |
Collapse
|
23
|
Chen Z, Liu Z, Wei T, Yang S, Dou Z, Wang Y, Ci H, Chang H, Qi Y, Yan J, Wang J, Zhang Y, Gao P, Li J, Liu Z. Improved Epitaxy of AlN Film for Deep-Ultraviolet Light-Emitting Diodes Enabled by Graphene. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1807345. [PMID: 30993771 DOI: 10.1002/adma.201807345] [Citation(s) in RCA: 49] [Impact Index Per Article: 9.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/13/2018] [Revised: 03/23/2019] [Indexed: 05/27/2023]
Abstract
The growth of single-crystal III-nitride films with a low stress and dislocation density is crucial for the semiconductor industry. In particular, AlN-derived deep-ultraviolet light-emitting diodes (DUV-LEDs) have important applications in microelectronic technologies and environmental sciences but are still limited by large lattice and thermal mismatches between the epilayer and substrate. Here, the quasi-van der Waals epitaxial (QvdWE) growth of high-quality AlN films on graphene/sapphire substrates is reported and their application in high-performance DUV-LEDs is demonstrated. Guided by density functional theory calculations, it is found that pyrrolic nitrogen in graphene introduced by a plasma treatment greatly facilitates the AlN nucleation and enables fast growth of a mirror-smooth single-crystal film in a very short time of ≈0.5 h (≈50% decrease compared with the conventional process), thus leading to a largely reduced cost. Additionally, graphene effectively releases the biaxial stress (0.11 GPa) and reduces the dislocation density in the epilayer. The as-fabricated DUV-LED shows a low turn-on voltage, good reliability, and high output power. This study may provide a revolutionary technology for the epitaxial growth of AlN films and provide opportunities for scalable applications of graphene films.
Collapse
Affiliation(s)
- Zhaolong Chen
- State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
- Beijing National Laboratory for Molecular Sciences, Beijing, 100871, China
| | - Zhiqiang Liu
- State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science, Beijing, 100049, China
| | - Tongbo Wei
- State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science, Beijing, 100049, China
| | - Shenyuan Yang
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science, Beijing, 100049, China
- School of Microelectronics, University of Chinese Academy of Sciences, Beijing, 101408, China
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Zhipeng Dou
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
| | - Yunyu Wang
- State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Haina Ci
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
- Beijing National Laboratory for Molecular Sciences, Beijing, 100871, China
| | - Hongliang Chang
- State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Yue Qi
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
- Beijing National Laboratory for Molecular Sciences, Beijing, 100871, China
| | - Jianchang Yan
- State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science, Beijing, 100049, China
| | - Junxi Wang
- State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science, Beijing, 100049, China
| | - Yanfeng Zhang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Peng Gao
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
- Collaborative Innovation Centre of Quantum Matter, Beijing, 100871, China
| | - Jinmin Li
- State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science, Beijing, 100049, China
| | - Zhongfan Liu
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
- Beijing National Laboratory for Molecular Sciences, Beijing, 100871, China
- Beijing Graphene Institute (BGI), Beijing, 100095, P. R. China
| |
Collapse
|
24
|
Liang R, Hu R, Long H, Huang X, Dai J, Xu L, Ye L, Zhai T, Kuo HC, Chen C. Bio-Inspired Flexible Fluoropolymer Film for All-Mode Light Extraction Enhancement. ACS APPLIED MATERIALS & INTERFACES 2019; 11:19623-19630. [PMID: 31056914 DOI: 10.1021/acsami.9b02942] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Enhancing the light extraction efficiency is a prevalent but vital challenge for most solid-state lighting technologies, especially for deep ultraviolet light-emitting diodes (DUV-LEDs). In this paper, inspired by the microstructure of the butterfly's eye, we propose and fabricate a flexible fluoropolymer film (FFP film) to tackle this issue for all-mode, full-wavelength light extraction enhancement for most solid-state lighting technologies compatibly. The experimental results demonstrate that compared with one mounted with a smooth FFP film, the light output power of DUV-LED is enhanced up to 26.7% by mounting the FFP film with 325 nm radius nanocones at a driving current of 200 mA. Importantly, thanks to the super-flexible feature of the FFP film, it can both cover the top surface and sidewalls of the DUV-LED chip, leading to the improvement of transverse electric and transverse magnetic mode light extraction by 20.5 and 21.8%, respectively. Finite element analysis (FEA) simulations of the electric field distribution of DUV-LEDs with the FFP film reveal the underlying physics. The present strategy is proposed from the view of the packaging level, which is cost-effective, able to be manufactured at a large scale, and compatible with the solid-state lighting technologies.
Collapse
Affiliation(s)
| | | | | | | | | | | | | | | | - Hao-Chung Kuo
- Department of Photonics and Institute of Electro-Optical Engineering , National Chiao Tung University , 1001 Ta Hsueh Road , Hsinchu 300 , Taiwan
| | | |
Collapse
|
25
|
Wang W, Li Y, Zheng Y, Li X, Huang L, Li G. Lattice Structure and Bandgap Control of 2D GaN Grown on Graphene/Si Heterostructures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2019; 15:e1802995. [PMID: 30821114 DOI: 10.1002/smll.201802995] [Citation(s) in RCA: 19] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/29/2018] [Revised: 02/05/2019] [Indexed: 06/09/2023]
Abstract
2D group-III nitride materials have shown a great promise for applications in optoelectronic devices thanks to their thickness-dependent properties. However, the epitaxial growth of 2D group-III nitrides remains a challenge. In this work, epitaxial growth of 2D GaN with well-controlled lattice structures and bandgaps is achieved by plasma-enhanced metal organic chemical vapor deposition via effective regulation of plasma energy and growth temperature. The structure of graphene/2D GaN/Si heterostructures is carefully investigated by high-resolution transmission electron microscopy. The formation mechanism of the 2D GaN layer is clearly clarified by theoretical calculations. Furthermore, a bandgap for 2D GaN ranging from ≈4.18 to ≈4.65 eV varying with the numbers of layers is theoretically calculated and experimentally confirmed. 2D GaN with well-controlled lattice structure and bandgap holds great potential for the development of deep ultraviolet light-emitting diodes, energy conversion devices, etc.
Collapse
Affiliation(s)
- Wenliang Wang
- State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, China
- Guangdong Choicore Optoelectronics Co., Ltd., Heyuan, 517003, China
| | - Yuan Li
- State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, China
| | - Yulin Zheng
- State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, China
| | - Xiaochan Li
- State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, China
| | - Liegen Huang
- State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, China
| | - Guoqiang Li
- State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, China
- Guangdong Choicore Optoelectronics Co., Ltd., Heyuan, 517003, China
| |
Collapse
|
26
|
Zhao S, Wang R, Chu S, Mi Z. Molecular Beam Epitaxy of III-Nitride Nanowires: Emerging Applications From Deep-Ultraviolet Light Emitters and Micro-LEDs to Artificial Photosynthesis. IEEE NANOTECHNOLOGY MAGAZINE 2019. [DOI: 10.1109/mnano.2019.2891370] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
|
27
|
Høiaas IM, Liudi Mulyo A, Vullum PE, Kim DC, Ahtapodov L, Fimland BO, Kishino K, Weman H. GaN/AlGaN Nanocolumn Ultraviolet Light-Emitting Diode Using Double-Layer Graphene as Substrate and Transparent Electrode. NANO LETTERS 2019; 19:1649-1658. [PMID: 30702300 DOI: 10.1021/acs.nanolett.8b04607] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
The many outstanding properties of graphene have impressed and intrigued scientists for the last few decades. Its transparency to light of all wavelengths combined with a low sheet resistance makes it a promising electrode material for novel optoelectronics. So far, no one has utilized graphene as both the substrate and transparent electrode of a functional optoelectronic device. Here, we demonstrate the use of double-layer graphene as a growth substrate and transparent conductive electrode for an ultraviolet light-emitting diode in a flip-chip configuration, where GaN/AlGaN nanocolumns are grown as the light-emitting structure using plasma-assisted molecular beam epitaxy. Although the sheet resistance is increased after nanocolumn growth compared with pristine double-layer graphene, our experiments show that the double-layer graphene functions adequately as an electrode. The GaN/AlGaN nanocolumns are found to exhibit a high crystal quality with no observable defects or stacking faults. Room-temperature electroluminescence measurements show a GaN related near bandgap emission peak at 365 nm and no defect-related yellow emission.
Collapse
Affiliation(s)
- Ida Marie Høiaas
- Department of Electronic Systems , Norwegian University of Science and Technology (NTNU) , NO-7491 Trondheim , Norway
| | - Andreas Liudi Mulyo
- Department of Electronic Systems , Norwegian University of Science and Technology (NTNU) , NO-7491 Trondheim , Norway
- Department of Engineering and Applied Sciences , Sophia University , 102-8554 Tokyo , Japan
| | | | - Dong-Chul Kim
- Department of Electronic Systems , Norwegian University of Science and Technology (NTNU) , NO-7491 Trondheim , Norway
| | - Lyubomir Ahtapodov
- Department of Electronic Systems , Norwegian University of Science and Technology (NTNU) , NO-7491 Trondheim , Norway
| | - Bjørn-Ove Fimland
- Department of Electronic Systems , Norwegian University of Science and Technology (NTNU) , NO-7491 Trondheim , Norway
| | - Katsumi Kishino
- Department of Engineering and Applied Sciences , Sophia University , 102-8554 Tokyo , Japan
- Sophia Nanotechnology Research Center , Sophia University , 102-8554 , Tokyo , Japan
| | - Helge Weman
- Department of Electronic Systems , Norwegian University of Science and Technology (NTNU) , NO-7491 Trondheim , Norway
| |
Collapse
|
28
|
Le BH, Liu X, Tran NH, Zhao S, Mi Z. An electrically injected AlGaN nanowire defect-free photonic crystal ultraviolet laser. OPTICS EXPRESS 2019; 27:5843-5850. [PMID: 30876179 DOI: 10.1364/oe.27.005843] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/14/2018] [Accepted: 11/09/2018] [Indexed: 06/09/2023]
Abstract
We report on the demonstration of an electrically injected AlGaN nanowire photonic crystal laser that can operate in the ultraviolet spectral range. The nanowire heterostructures were grown on sapphire substrate using a site-controlled selective area growth process. By exploiting the topological high-Q resonance of a defect-free nanowire photonic crystal, we have demonstrated electrically pumped lasers that can operate at 369.5 nm with a relatively low threshold current density of ~2.1 kA/cm2 under continuous wave operation at room-temperature. This work provides a promising approach for achieving low threshold semiconductor laser diodes operating in the UV spectral range that were previously difficult.
Collapse
|
29
|
Bae S, Jeon I, Mahmood J, Baek J. Molybdenum‐Based Carbon Hybrid Materials to Enhance the Hydrogen Evolution Reaction. Chemistry 2018; 24:18158-18179. [DOI: 10.1002/chem.201804140] [Citation(s) in RCA: 34] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/14/2018] [Revised: 10/29/2018] [Indexed: 01/02/2023]
Affiliation(s)
- Seo‐Yoon Bae
- School of Energy and Chemical Engineering, Center for Dimension-Controllable Organic FrameworksUlsan National Institute of Science and Technology (UNIST) 50 UNIST Ulsan 44919 South Korea
| | - In‐Yup Jeon
- Department of Chemical EngineeringWonkwang University 460, Iksandae-ro Iksan, Jeonbuk 54538 South Korea
| | - Javeed Mahmood
- School of Energy and Chemical Engineering, Center for Dimension-Controllable Organic FrameworksUlsan National Institute of Science and Technology (UNIST) 50 UNIST Ulsan 44919 South Korea
| | - Jong‐Beom Baek
- School of Energy and Chemical Engineering, Center for Dimension-Controllable Organic FrameworksUlsan National Institute of Science and Technology (UNIST) 50 UNIST Ulsan 44919 South Korea
| |
Collapse
|
30
|
2D strain mapping using scanning transmission electron microscopy Moiré interferometry and geometrical phase analysis. Ultramicroscopy 2018; 187:1-12. [DOI: 10.1016/j.ultramic.2017.12.016] [Citation(s) in RCA: 26] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/07/2017] [Revised: 06/21/2017] [Accepted: 12/27/2017] [Indexed: 11/20/2022]
|
31
|
Liu B, Li J, Yang W, Zhang X, Jiang X, Bando Y. Semiconductor Solid-Solution Nanostructures: Synthesis, Property Tailoring, and Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2017; 13:1701998. [PMID: 28961363 DOI: 10.1002/smll.201701998] [Citation(s) in RCA: 25] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/13/2017] [Revised: 07/29/2017] [Indexed: 06/07/2023]
Abstract
The innovation of band-gap engineering in advanced materials caused by the alloying of different semiconductors into solid-solution nanostructures provides numerous opportunities and advantages in optoelectronic property tailoring. The semiconductor solid-solution nanostructures have multifarious emission wavelength, adjustability of absorption edge, tunable electrical resistivity, and cutting-edge photoredox capability, and these advantages can be rationalized by the assorted synthesis strategies such as, binary, ternary, and quaternary solid-solutions. In addition, the abundance of elements in groups IIB, IIIA, VA, VIA, and VIIA provides sufficient room to tailor-make the semiconductor solid-solution nanostructures with the desired properties. Recent progress of semiconductor solid-solution nanostructures including synthesis strategies, structure and composition design, band-gap engineering related to the optical and electrical properties, and their applications in different fields is comprehensively reviewed. The classification, formation principle, synthesis routes, and the advantage of semiconductor solid-solution nanostructures are systematically reviewed. Moreover, the challenges faced in this area and the future prospects are discussed. By combining the information together, it is strongly anticipated that this Review may shed new light on understanding semiconductor solid-solution nanostructures while expected to have continuous breakthroughs in band-gap engineering and advanced optoelectronic nanodevices.
Collapse
Affiliation(s)
- Baodan Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, No. 72 Wenhua Road, Shenhe District, Shenyang, 110016, China
| | - Jing Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, No. 72 Wenhua Road, Shenhe District, Shenyang, 110016, China
| | - Wenjin Yang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, No. 72 Wenhua Road, Shenhe District, Shenyang, 110016, China
| | - Xinglai Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, No. 72 Wenhua Road, Shenhe District, Shenyang, 110016, China
| | - Xin Jiang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, No. 72 Wenhua Road, Shenhe District, Shenyang, 110016, China
| | - Yoshio Bando
- World Premier International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, 305-0044, Japan
- Australian Institute for Innovative Materials (AIM), University of Wollongong, Squires Way, North Wollongong, NSW, 2500, Australia
| |
Collapse
|
32
|
Liu X, Le BH, Woo SY, Zhao S, Pofelski A, Botton GA, Mi Z. Selective area epitaxy of AlGaN nanowire arrays across nearly the entire compositional range for deep ultraviolet photonics. OPTICS EXPRESS 2017; 25:30494-30502. [PMID: 29221077 DOI: 10.1364/oe.25.030494] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/10/2017] [Accepted: 11/12/2017] [Indexed: 06/07/2023]
Abstract
Semiconductor light sources operating in the ultraviolet (UV)-C band (100-280 nm) are in demand for a broad range of applications but suffer from extremely low efficiency. AlGaN nanowire photonic crystals promise to break the efficiency bottleneck of deep UV photonics. We report, for the first time, site-controlled epitaxy of AlGaN nanowire arrays with Al incorporation controllably varied across nearly the entire compositional range. It is also observed that an Al-rich AlGaN shell structure is spontaneously formed, significantly suppressing nonradiative surface recombination. An internal quantum efficiency up to 45% was measured at room-temperature. We have further demonstrated large area AlGaN nanowire LEDs operating in the UV-C band on sapphire substrate, which exhibit excellent optical and electrical performance, including a small turn-on voltage of ~4.4 V and an output power of ~0.93 W/cm2 at a current density of 252 A/cm2. The controlled synthesis of AlGaN subwavelength nanostructures with well-defined size, spacing, and spatial arrangement and tunable emission opens up new opportunities for developing high efficiency LEDs and lasers and promises to break the efficiency bottleneck of deep UV photonics.
Collapse
|
33
|
Bengoechea-Encabo A, Albert S, Müller M, Xie MY, Veit P, Bertram F, Sanchez-Garcia MA, Zúñiga-Pérez J, de Mierry P, Christen J, Calleja E. Selective area growth of AlN/GaN nanocolumns on (0001) and (11-22) GaN/sapphire for semi-polar and non-polar AlN pseudo-templates. NANOTECHNOLOGY 2017; 28:365704. [PMID: 28604369 DOI: 10.1088/1361-6528/aa78e6] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Despite the strong interest in optoelectronic devices working in the deep ultraviolet range, no suitable low cost, large-area, high-quality AlN substrates have been available up to now. The aim of this work is the selective area growth of AlN nanocolumns by plasma assisted molecular beam epitaxy on polar (0001) and semi-polar (11-22) GaN/sapphire templates. The resulting AlN nanocolumns are vertically oriented with semi-polar {1-103} top facets when grown on (0001) GaN/sapphire, or oriented at 58° from the template normal and exposing {1-100} non-polar top facets when growing on (11-22) GaN/sapphire, in both cases reaching filling factors ≥80%. In these kinds of arrays each nanostructure could function as a building block for an individual nano-device or, due to the large filling factor values, the overall array top surfaces could be seen as a quasi (semi-polar or non-polar) AlN pseudo-template.
Collapse
Affiliation(s)
- A Bengoechea-Encabo
- ISOM and Dept. Ingeniería Electrónica, ETSI Telecomunicación, Universidad Politécnica de Madrid, Ciudad Universitaria s/n, E-28040 Madrid, Spain
| | | | | | | | | | | | | | | | | | | | | |
Collapse
|
34
|
|
35
|
Janjua B, Sun H, Zhao C, Anjum DH, Wu F, Alhamoud AA, Li X, Albadri AM, Alyamani AY, El-Desouki MM, Ng TK, Ooi BS. Self-planarized quantum-disks-in-nanowires ultraviolet-B emitters utilizing pendeo-epitaxy. NANOSCALE 2017; 9:7805-7813. [PMID: 28290591 DOI: 10.1039/c7nr00006e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
The growth of self-assembled, vertically oriented and uniform nanowires (NWs) has remained a challenge for efficient light-emitting devices. Here, we demonstrate dislocation-free AlGaN NWs with spontaneous coalescence, which are grown by plasma-assisted molecular beam epitaxy on an n-type doped silicon (100) substrate. A high density of NWs (filling factor >95%) was achieved under optimized growth conditions, enabling device fabrication without planarization using ultraviolet (UV)-absorbing polymer materials. UV-B (280-320 nm) light-emitting diodes (LEDs), which emit at ∼303 nm with a narrow full width at half maximum (FWHM) (∼20 nm) of the emission spectrum, are demonstrated using a large active region ("active region/NW length-ratio" ∼50%) embedded with 15 stacks of AlxGa1-xN/AlyGa1-yN quantum-disks (Qdisks). To improve the carrier injection, a graded layer is introduced at the AlGaN/GaN interfaces on both p- and n-type regions. This work demonstrates a viable approach to easily fabricate ultra-thin, efficient UV optoelectronic devices on low-cost and scalable silicon substrates.
Collapse
Affiliation(s)
- B Janjua
- King Abdullah University of Science and Technology (KAUST), Photonics Laboratory, Thuwal 23955-6900, Saudi Arabia.
| | | | | | | | | | | | | | | | | | | | | | | |
Collapse
|
36
|
Janjua B, Sun H, Zhao C, Anjum DH, Priante D, Alhamoud AA, Wu F, Li X, Albadri AM, Alyamani AY, El-Desouki MM, Ng TK, Ooi BS. Droop-free Al xGa 1-xN/Al yGa 1-yN quantum-disks-in-nanowires ultraviolet LED emitting at 337 nm on metal/silicon substrates. OPTICS EXPRESS 2017; 25:1381-1390. [PMID: 28158020 DOI: 10.1364/oe.25.001381] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/21/2016] [Accepted: 01/12/2017] [Indexed: 06/06/2023]
Abstract
Currently the AlGaN-based ultraviolet (UV) solid-state lighting research suffers from numerous challenges. In particular, low internal quantum efficiency, low extraction efficiency, inefficient doping, large polarization fields, and high dislocation density epitaxy constitute bottlenecks in realizing high power devices. Despite the clear advantage of quantum-confinement nanostructure, it has not been widely utilized in AlGaN-based nanowires. Here we utilize the self-assembled nanowires (NWs) with embedding quantum-disks (Qdisks) to mitigate these issues, and achieve UV emission of 337 nm at 32 A/cm2 (80 mA in 0.5 × 0.5 mm2 device), a turn-on voltage of ~5.5 V and droop-free behavior up to 120 A/cm2 of injection current. The device was grown on a titanium-coated n-type silicon substrate, to improve current injection and heat dissipation. A narrow linewidth of 11.7 nm in the electroluminescence spectrum and a strong wavefunctions overlap factor of 42% confirm strong quantum confinement within uniformly formed AlGaN/AlGaN Qdisks, verified using transmission electron microscopy (TEM). The nitride-based UV nanowires light-emitting diodes (NWs-LEDs) grown on low cost and scalable metal/silicon template substrate, offers a scalable, environment friendly and low cost solution for numerous applications, such as solid-state lighting, spectroscopy, medical science and security.
Collapse
|