1
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Gatsios C, Opitz A, Lungwitz D, Mansour AE, Schultz T, Shin D, Hammer S, Pflaum J, Zhang Y, Barlow S, Marder SR, Koch N. Surface doping of rubrene single crystals by molecular electron donors and acceptors. Phys Chem Chem Phys 2023; 25:29718-29726. [PMID: 37882732 DOI: 10.1039/d3cp03640e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/27/2023]
Abstract
The surface molecular doping of organic semiconductors can play an important role in the development of organic electronic or optoelectronic devices. Single-crystal rubrene remains a leading molecular candidate for applications in electronics due to its high hole mobility. In parallel, intensive research into the fabrication of flexible organic electronics requires the careful design of functional interfaces to enable optimal device characteristics. To this end, the present work seeks to understand the effect of surface molecular doping on the electronic band structure of rubrene single crystals. Our angle-resolved photoemission measurements reveal that the Fermi level moves in the band gap of rubrene depending on the direction of surface electron-transfer reactions with the molecular dopants, yet the valence band dispersion remains essentially unperturbed. This indicates that surface electron-transfer doping of a molecular single crystal can effectively modify the near-surface charge density, while retaining good charge-carrier mobility.
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Affiliation(s)
- Christos Gatsios
- Institut für Physik & IRIS Adlershof, Humboldt-Universität zu Berlin, 12489 Berlin, Germany.
| | - Andreas Opitz
- Institut für Physik & IRIS Adlershof, Humboldt-Universität zu Berlin, 12489 Berlin, Germany.
| | - Dominique Lungwitz
- Institut für Physik & IRIS Adlershof, Humboldt-Universität zu Berlin, 12489 Berlin, Germany.
| | - Ahmed E Mansour
- Institut für Physik & IRIS Adlershof, Humboldt-Universität zu Berlin, 12489 Berlin, Germany.
- Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 12489 Berlin, Germany
| | - Thorsten Schultz
- Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 12489 Berlin, Germany
| | - Dongguen Shin
- Institut für Physik & IRIS Adlershof, Humboldt-Universität zu Berlin, 12489 Berlin, Germany.
| | - Sebastian Hammer
- Experimentelle Physik VI, Julius-Maximilians-Universität Würzburg, 97074 Würzburg, Germany
- Center for the Physics of Materials, Departments of Physics and Chemistry, McGill University, Montreal, Qc, Canada
| | - Jens Pflaum
- Experimentelle Physik VI, Julius-Maximilians-Universität Würzburg, 97074 Würzburg, Germany
- Center for Applied Energy Research e.V., Magdalene-Schoch-Str. 3, 97074 Würzburg, Germany
| | - Yadong Zhang
- Renewable and Sustainable Energy Institute (RASEI), University of Colorado Boulder, Boulder, CO 80309, USA
| | - Stephen Barlow
- Renewable and Sustainable Energy Institute (RASEI), University of Colorado Boulder, Boulder, CO 80309, USA
| | - Seth R Marder
- Renewable and Sustainable Energy Institute (RASEI), University of Colorado Boulder, Boulder, CO 80309, USA
- Department of Chemical and Biological Engineering and Department of Chemistry, University of Colorado Boulder, Boulder, CO 80309, USA
| | - Norbert Koch
- Institut für Physik & IRIS Adlershof, Humboldt-Universität zu Berlin, 12489 Berlin, Germany.
- Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 12489 Berlin, Germany
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2
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Sawatzki-Park M, Wang SJ, Kleemann H, Leo K. Highly Ordered Small Molecule Organic Semiconductor Thin-Films Enabling Complex, High-Performance Multi-Junction Devices. Chem Rev 2023. [PMID: 37315945 DOI: 10.1021/acs.chemrev.2c00844] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Organic semiconductors have opened up many new electronic applications, enabled by properties like flexibility, low-cost manufacturing, and biocompatibility, as well as improved ecological sustainability due to low energy use during manufacturing. Most current devices are made of highly disordered thin-films, leading to poor transport properties and, ultimately, reduced device performance as well. Here, we discuss techniques to prepare highly ordered thin-films of organic semiconductors to realize fast and highly efficient devices as well as novel device types. We discuss the various methods that can be implemented to achieve such highly ordered layers compatible with standard semiconductor manufacturing processes and suitable for complex devices. A special focus is put on approaches utilizing thermal treatment of amorphous layers of small molecules to create crystalline thin-films. This technique has first been demonstrated for rubrene─an organic semiconductor with excellent transport properties─and extended to some other molecular structures. We discuss recent experiments that show that these highly ordered layers show excellent lateral and vertical mobilities and can be electrically doped to achieve high n- and p-type conductivities. With these achievements, it is possible to integrate these highly ordered layers into specialized devices, such as high-frequency diodes or completely new device principles for organics, e.g., bipolar transistors.
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Affiliation(s)
- Michael Sawatzki-Park
- Dresden Integrated Center for Applied Photophysics and Photonic Materials (IAPP), Technische Universität Dresden, Dresden 01219, Germany
| | - Shu-Jen Wang
- Dresden Integrated Center for Applied Photophysics and Photonic Materials (IAPP), Technische Universität Dresden, Dresden 01219, Germany
| | - Hans Kleemann
- Dresden Integrated Center for Applied Photophysics and Photonic Materials (IAPP), Technische Universität Dresden, Dresden 01219, Germany
| | - Karl Leo
- Dresden Integrated Center for Applied Photophysics and Photonic Materials (IAPP), Technische Universität Dresden, Dresden 01219, Germany
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3
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Nakayama Y, Tsuruta R, Koganezawa T. 'Molecular Beam Epitaxy' on Organic Semiconductor Single Crystals: Characterization of Well-Defined Molecular Interfaces by Synchrotron Radiation X-ray Diffraction Techniques. MATERIALS (BASEL, SWITZERLAND) 2022; 15:7119. [PMID: 36295203 PMCID: PMC9605552 DOI: 10.3390/ma15207119] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/07/2022] [Revised: 10/04/2022] [Accepted: 10/10/2022] [Indexed: 06/16/2023]
Abstract
Epitaxial growth, often termed "epitaxy", is one of the most essential techniques underpinning semiconductor electronics, because crystallinities of the materials seriously dominate operation efficiencies of the electronic devices such as power gain/consumption, response speed, heat loss, and so on. In contrast to already well-established epitaxial growth methodologies for inorganic (covalent or ionic) semiconductors, studies on inter-molecular (van der Waals) epitaxy for organic semiconductors is still in the initial stage. In the present review paper, we briefly summarize recent works on the epitaxial inter-molecular junctions built on organic semiconductor single-crystal surfaces, particularly on single crystals of pentacene and rubrene. Experimental methodologies applicable for the determination of crystal structures of such organic single-crystal-based molecular junctions are also illustrated.
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Affiliation(s)
- Yasuo Nakayama
- Department of Pure and Applied Chemistry, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510, Japan
- Division of Colloid and Interface Science, Tokyo University of Science, Noda 278-8510, Japan
- Research Group for Advanced Energy Conversion, Tokyo University of Science, Noda 278-8510, Japan
| | - Ryohei Tsuruta
- Faculty of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8577, Japan
| | - Tomoyuki Koganezawa
- Industrial Application Division, Japan Synchrotron Radiation Research Institute (JASRI), Hyogo 679-5198, Japan
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4
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Takahashi K, Izawa S, Ohtsuka N, Izumiseki A, Tsuruta R, Takeuchi R, Gunjo Y, Nakanishi Y, Mase K, Koganezawa T, Momiyama N, Hiramoto M, Nakayama Y. Quasi-Homoepitaxial Junction of Organic Semiconductors: A Structurally Seamless but Electronically Abrupt Interface between Rubrene and Bis(trifluoromethyl)dimethylrubrene. J Phys Chem Lett 2021; 12:11430-11437. [PMID: 34792366 PMCID: PMC8630783 DOI: 10.1021/acs.jpclett.1c03094] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/20/2021] [Accepted: 11/08/2021] [Indexed: 06/13/2023]
Abstract
Single-crystalline organic semiconductors exhibiting band transport have opened new possibilities for the utilization of efficient charge carrier conduction in organic electronic devices. The epitaxial growth of molecular materials is a promising route for the realization of well-crystallized organic semiconductor p-n junctions for optoelectronic applications enhanced by the improved charge carrier mobility. In this study, the formation of a high-quality crystalline interface upon "quasi-homoepitaxial" growth of bis(trifluoromethyl)dimethylrubrene (fmRub) on the single-crystal surface of rubrene was revealed by using out-of-plane and grazing-incidence X-ray diffraction techniques. Ultraviolet photoelectron spectroscopy results indicated abrupt electronic energy levels and the occurrence of band bending across this quasi-homoepitaxial interface. This study verifies that the minimization of the lattice mismatch enhances the crystalline qualities at the heterojunctions even for van der Waals molecular condensates, potentially opening an untested route for the realization of high-mobility organic semiconductor optoelectronics.
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Affiliation(s)
- Kana Takahashi
- Department
of Pure and Applied Chemistry, Tokyo University
of Science, 2641 Yamazaki, Noda 278-8510, Japan
| | - Seiichiro Izawa
- Institute
for Molecular Science, National Institutes
of Natural Sciences, and SOKENDAI, 5-1 Higashiyama, Myodaiji, Okazaki, Aichi 444-8787, Japan
- Precursory
Research for Embryonic Science and Technology (PRESTO), Japan Science and Technology Agency (JST), 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan
| | - Naoya Ohtsuka
- Institute
for Molecular Science, National Institutes
of Natural Sciences, and SOKENDAI, 5-1 Higashiyama, Myodaiji, Okazaki, Aichi 444-8787, Japan
| | - Atsuto Izumiseki
- Institute
for Molecular Science, National Institutes
of Natural Sciences, and SOKENDAI, 5-1 Higashiyama, Myodaiji, Okazaki, Aichi 444-8787, Japan
| | - Ryohei Tsuruta
- Department
of Pure and Applied Chemistry, Tokyo University
of Science, 2641 Yamazaki, Noda 278-8510, Japan
| | - Riku Takeuchi
- Department
of Pure and Applied Chemistry, Tokyo University
of Science, 2641 Yamazaki, Noda 278-8510, Japan
| | - Yuki Gunjo
- Department
of Pure and Applied Chemistry, Tokyo University
of Science, 2641 Yamazaki, Noda 278-8510, Japan
| | - Yuki Nakanishi
- Department
of Pure and Applied Chemistry, Tokyo University
of Science, 2641 Yamazaki, Noda 278-8510, Japan
| | - Kazuhiko Mase
- Institute
for Materials Structure Science, High Energy
Accelerator Research Organization (KEK) and SOKENDAI, Tsukuba 305-0801, Ibaraki, Japan
| | - Tomoyuki Koganezawa
- Industrial
Application Division, Japan Synchrotron
Radiation Research Institute (JASRI), Sayo-gun 679-5198, Hyo̅go, Japan
| | - Norie Momiyama
- Institute
for Molecular Science, National Institutes
of Natural Sciences, and SOKENDAI, 5-1 Higashiyama, Myodaiji, Okazaki, Aichi 444-8787, Japan
| | - Masahiro Hiramoto
- Institute
for Molecular Science, National Institutes
of Natural Sciences, and SOKENDAI, 5-1 Higashiyama, Myodaiji, Okazaki, Aichi 444-8787, Japan
| | - Yasuo Nakayama
- Department
of Pure and Applied Chemistry, Tokyo University
of Science, 2641 Yamazaki, Noda 278-8510, Japan
- Division
of Colloid and Interface Science, Tokyo University of Science, Noda 278-8510, Japan
- Research
Group for Advanced Energy Conversion, Tokyo
University of Science, Noda 278-8510, Japan
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5
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Scaccabarozzi AD, Basu A, Aniés F, Liu J, Zapata-Arteaga O, Warren R, Firdaus Y, Nugraha MI, Lin Y, Campoy-Quiles M, Koch N, Müller C, Tsetseris L, Heeney M, Anthopoulos TD. Doping Approaches for Organic Semiconductors. Chem Rev 2021; 122:4420-4492. [PMID: 34793134 DOI: 10.1021/acs.chemrev.1c00581] [Citation(s) in RCA: 70] [Impact Index Per Article: 23.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
Abstract
Electronic doping in organic materials has remained an elusive concept for several decades. It drew considerable attention in the early days in the quest for organic materials with high electrical conductivity, paving the way for the pioneering work on pristine organic semiconductors (OSCs) and their eventual use in a plethora of applications. Despite this early trend, however, recent strides in the field of organic electronics have been made hand in hand with the development and use of dopants to the point that are now ubiquitous. Here, we give an overview of all important advances in the area of doping of organic semiconductors and their applications. We first review the relevant literature with particular focus on the physical processes involved, discussing established mechanisms but also newly proposed theories. We then continue with a comprehensive summary of the most widely studied dopants to date, placing particular emphasis on the chemical strategies toward the synthesis of molecules with improved functionality. The processing routes toward doped organic films and the important doping-processing-nanostructure relationships, are also discussed. We conclude the review by highlighting how doping can enhance the operating characteristics of various organic devices.
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Affiliation(s)
- Alberto D Scaccabarozzi
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal 23955, Saudi Arabia
| | - Aniruddha Basu
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal 23955, Saudi Arabia
| | - Filip Aniés
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, London W12 0BZ, U.K
| | - Jian Liu
- Department of Chemistry and Chemical Engineering, Chalmers University of Technology, Göteborg 412 96, Sweden
| | - Osnat Zapata-Arteaga
- Materials Science Institute of Barcelona, ICMAB-CSIC, Campus UAB, 08193 Bellaterra, Spain
| | - Ross Warren
- Institut für Physik & IRIS Adlershof, Humboldt-Universität zu Berlin, 12489 Berlin, Germany
| | - Yuliar Firdaus
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal 23955, Saudi Arabia.,Research Center for Electronics and Telecommunication, Indonesian Institute of Science, Jalan Sangkuriang Komplek LIPI Building 20 level 4, Bandung 40135, Indonesia
| | - Mohamad Insan Nugraha
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal 23955, Saudi Arabia
| | - Yuanbao Lin
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal 23955, Saudi Arabia
| | - Mariano Campoy-Quiles
- Materials Science Institute of Barcelona, ICMAB-CSIC, Campus UAB, 08193 Bellaterra, Spain
| | - Norbert Koch
- Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Kekulé-Strasse 5, 12489 Berlin, Germany.,Institut für Physik & IRIS Adlershof, Humboldt-Universität zu Berlin, 12489 Berlin, Germany
| | - Christian Müller
- Department of Chemistry and Chemical Engineering, Chalmers University of Technology, Göteborg 412 96, Sweden
| | - Leonidas Tsetseris
- Department of Physics, National Technical University of Athens, Athens GR-15780, Greece
| | - Martin Heeney
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, London W12 0BZ, U.K
| | - Thomas D Anthopoulos
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal 23955, Saudi Arabia
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6
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Sawatzki MF, Kleemann H, Boroujeni BK, Wang S, Vahland J, Ellinger F, Leo K. Doped Highly Crystalline Organic Films: Toward High-Performance Organic Electronics. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:2003519. [PMID: 33747740 PMCID: PMC7967074 DOI: 10.1002/advs.202003519] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/15/2020] [Revised: 10/27/2020] [Indexed: 06/12/2023]
Abstract
Today's organic electronic devices, such as the highly successful OLED displays, are based on disordered films, with carrier mobilities orders of magnitude below those of inorganic semiconductors like silicon or GaAs. For organic devices such as diodes and transistors, higher charge carrier mobilities are paramount to achieve high performance. Organic single crystals have been shown to offer these required high mobilities. However, manufacturing and processing of these crystals are complex, rendering their use outside of laboratory-scale applications negligible. Furthermore, doping cannot be easily integrated into these systems, which is particularly problematic for devices mandating high mobility materials. Here, it is demonstrated for the model system rubrene that highly ordered, doped thin films can be prepared, allowing high-performance organic devices on almost any substrate. Specifically, triclinic rubrene crystals are created by abrupt heating of amorphous layers and can be electrically doped during the epitaxial growth process to achieve hole or electron conduction. Analysis of the space charge limited current in these films reveals record vertical mobilities of 10.3(49) cm2 V-1 s-1. To demonstrate the performance of this materials system, monolithic pin-diodes aimed for rectification are built. The f 3 d b of these diodes is over 1 GHz and thus higher than any other organic semiconductor-based device shown so far. It is believed that this work will pave the way for future high-performance organic devices based on highly crystalline thin films.
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Affiliation(s)
- Michael F. Sawatzki
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP)Technische Universität DresdenNoethnitzer Str. 61Dresden01187Germany
| | - Hans Kleemann
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP)Technische Universität DresdenNoethnitzer Str. 61Dresden01187Germany
| | - Bahman K. Boroujeni
- Chair of Circuit Design and Network Theory (CCN)Technische Universität DresdenHelmholtz Str. 18Dresden01069Germany
- Center for Advancing Electronics Dresden (cfaed)Technische Universität DresdenHelmholtz Str. 18Dresden01069Germany
| | - Shu‐Jen Wang
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP)Technische Universität DresdenNoethnitzer Str. 61Dresden01187Germany
| | - Joern Vahland
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP)Technische Universität DresdenNoethnitzer Str. 61Dresden01187Germany
| | - Frank Ellinger
- Chair of Circuit Design and Network Theory (CCN)Technische Universität DresdenHelmholtz Str. 18Dresden01069Germany
- Center for Advancing Electronics Dresden (cfaed)Technische Universität DresdenHelmholtz Str. 18Dresden01069Germany
| | - Karl Leo
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP)Technische Universität DresdenNoethnitzer Str. 61Dresden01187Germany
- Center for Advancing Electronics Dresden (cfaed)Technische Universität DresdenHelmholtz Str. 18Dresden01069Germany
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7
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Watanabe S, Hakamatani R, Yaegashi K, Yamashita Y, Nozawa H, Sasaki M, Kumagai S, Okamoto T, Tang CG, Chua L, Ho PKH, Takeya J. Surface Doping of Organic Single-Crystal Semiconductors to Produce Strain-Sensitive Conductive Nanosheets. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:2002065. [PMID: 33552854 PMCID: PMC7856890 DOI: 10.1002/advs.202002065] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/02/2020] [Revised: 09/24/2020] [Indexed: 06/12/2023]
Abstract
A highly periodic electrostatic potential, even though established in van der Waals bonded organic crystals, is essential for the realization of a coherent band electron system. While impurity doping is an effective chemical operation that can precisely tune the energy of an electronic system, it always faces an unavoidable difficulty in molecular crystals because the introduction of a relatively high density of dopants inevitably destroys the highly ordered molecular framework. In striking contrast, a versatile strategy is presented to create coherent 2D electronic carriers at the surface of organic semiconductor crystals with their precise molecular structures preserved perfectly. The formation of an assembly of redox-active molecular dopants via a simple one-shot solution process on a molecularly flat crystalline surface allows efficient chemical doping and results in a relatively high carrier density of 1013 cm-2 at room temperature. Structural and magnetotransport analyses comprehensively reveal that excellent carrier transport and piezoresistive effects can be obtained that are similar to those in bulk crystals.
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Affiliation(s)
- Shun Watanabe
- Material Innovation Research Center (MIRC) and Department of Advanced Materials ScienceGraduate School of Frontier SciencesThe University of Tokyo5‐1‐5 KashiwanohaKashiwaChiba277‐8561Japan
- AIST‐UTokyo Advanced Operando‐Mesurement Technology Open Innovation Laboratory (OPERANDO‐OIL)AIST5‐1‐5 KashiwanohaKashiwaChiba277‐8561Japan
- Precursory Research for Embryonic Science and Technology (PRESTO)4‐1‐8 HonchoKawaguchiSaitama332‐0012Japan
| | - Ryohei Hakamatani
- Material Innovation Research Center (MIRC) and Department of Advanced Materials ScienceGraduate School of Frontier SciencesThe University of Tokyo5‐1‐5 KashiwanohaKashiwaChiba277‐8561Japan
| | - Keita Yaegashi
- Material Innovation Research Center (MIRC) and Department of Advanced Materials ScienceGraduate School of Frontier SciencesThe University of Tokyo5‐1‐5 KashiwanohaKashiwaChiba277‐8561Japan
| | - Yu Yamashita
- Material Innovation Research Center (MIRC) and Department of Advanced Materials ScienceGraduate School of Frontier SciencesThe University of Tokyo5‐1‐5 KashiwanohaKashiwaChiba277‐8561Japan
- International Center of Materials Nanoarchitectonics (WPI‐MANA)National Institute for Materials Science (NIMS)1‐1 NamikiTsukuba305‐0044Japan
| | - Han Nozawa
- PI‐CRYSTAL Inc.5‐4‐19 KashiwanohaKashiwaChiba277‐0882Japan
| | - Mari Sasaki
- Material Innovation Research Center (MIRC) and Department of Advanced Materials ScienceGraduate School of Frontier SciencesThe University of Tokyo5‐1‐5 KashiwanohaKashiwaChiba277‐8561Japan
| | - Shohei Kumagai
- Material Innovation Research Center (MIRC) and Department of Advanced Materials ScienceGraduate School of Frontier SciencesThe University of Tokyo5‐1‐5 KashiwanohaKashiwaChiba277‐8561Japan
| | - Toshihiro Okamoto
- Material Innovation Research Center (MIRC) and Department of Advanced Materials ScienceGraduate School of Frontier SciencesThe University of Tokyo5‐1‐5 KashiwanohaKashiwaChiba277‐8561Japan
- AIST‐UTokyo Advanced Operando‐Mesurement Technology Open Innovation Laboratory (OPERANDO‐OIL)AIST5‐1‐5 KashiwanohaKashiwaChiba277‐8561Japan
- Precursory Research for Embryonic Science and Technology (PRESTO)4‐1‐8 HonchoKawaguchiSaitama332‐0012Japan
| | - Cindy G. Tang
- Department of PhysicsNational University of SingaporeLower Kent Ridge RoadSingaporeS117550Singapore
| | - Lay‐Lay Chua
- Department of PhysicsNational University of SingaporeLower Kent Ridge RoadSingaporeS117550Singapore
- Department of ChemistryNational University of SingaporeLower Kent Ridge RoadSingaporeS1175502Singapore
| | - Peter K. H. Ho
- Department of PhysicsNational University of SingaporeLower Kent Ridge RoadSingaporeS117550Singapore
| | - Jun Takeya
- Material Innovation Research Center (MIRC) and Department of Advanced Materials ScienceGraduate School of Frontier SciencesThe University of Tokyo5‐1‐5 KashiwanohaKashiwaChiba277‐8561Japan
- AIST‐UTokyo Advanced Operando‐Mesurement Technology Open Innovation Laboratory (OPERANDO‐OIL)AIST5‐1‐5 KashiwanohaKashiwaChiba277‐8561Japan
- International Center of Materials Nanoarchitectonics (WPI‐MANA)National Institute for Materials Science (NIMS)1‐1 NamikiTsukuba305‐0044Japan
- PI‐CRYSTAL Inc.5‐4‐19 KashiwanohaKashiwaChiba277‐0882Japan
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8
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Yabara Y, Izawa S, Hiramoto M. Donor/Acceptor Photovoltaic Cells Fabricated on p-Doped Organic Single-Crystal Substrates. MATERIALS 2020; 13:ma13092068. [PMID: 32365885 PMCID: PMC7254258 DOI: 10.3390/ma13092068] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/19/2020] [Revised: 04/10/2020] [Accepted: 04/24/2020] [Indexed: 11/16/2022]
Abstract
In this study, the operation of donor/acceptor photovoltaic cells fabricated on homoepitaxially grown p-doped rubrene single-crystal substrates is demonstrated. The photocurrent density is dominated by the sheet conductivity (σ□) of the p-type single-crystal layer doped to 100 ppm with an iron chloride (Fe2Cl6) acceptor. A 65 mm thick p-type rubrene single-crystal substrate is expected to be required for a photocurrent density of 20 mA·cm-2. An entire bulk doping technique for rubrene single crystals is indispensable for the fabrication of practical organic single-crystal solar cells.
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Affiliation(s)
- Yusuke Yabara
- Institute for Molecular Science, 5-1 Higashiyama, Myodaiji Town, Okazaki City, Aichi 444-8787, Japan; (Y.Y.); (S.I.)
| | - Seiichiro Izawa
- Institute for Molecular Science, 5-1 Higashiyama, Myodaiji Town, Okazaki City, Aichi 444-8787, Japan; (Y.Y.); (S.I.)
- The Graduate University for Advanced Studies SOKENDAI, 5-1 Higashiyama, Myodaiji Town, Okazaki City, Aichi 444-8787, Japan
| | - Masahiro Hiramoto
- Institute for Molecular Science, 5-1 Higashiyama, Myodaiji Town, Okazaki City, Aichi 444-8787, Japan; (Y.Y.); (S.I.)
- The Graduate University for Advanced Studies SOKENDAI, 5-1 Higashiyama, Myodaiji Town, Okazaki City, Aichi 444-8787, Japan
- Correspondence: ; Tel.: +81-0564-59-5536
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9
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Electronic and Crystallographic Examinations of the Homoepitaxially Grown Rubrene Single Crystals. MATERIALS 2020; 13:ma13081978. [PMID: 32340365 PMCID: PMC7215553 DOI: 10.3390/ma13081978] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/08/2020] [Revised: 04/17/2020] [Accepted: 04/20/2020] [Indexed: 11/17/2022]
Abstract
Homoepitaxial growth of organic semiconductor single crystals is a promising methodology toward the establishment of doping technology for organic opto-electronic applications. In this study, both electronic and crystallographic properties of homoepitaxially grown single crystals of rubrene were accurately examined. Undistorted lattice structures of homoepitaxial rubrene were confirmed by high-resolution analyses of grazing-incidence X-ray diffraction (GIXD) using synchrotron radiation. Upon bulk doping of acceptor molecules into the homoepitaxial single crystals of rubrene, highly sensitive photoelectron yield spectroscopy (PYS) measurements unveiled a transition of the electronic states, from induction of hole states at the valence band maximum at an adequate doping ratio (10 ppm), to disturbance of the valence band itself for excessive ratios (≥ 1000 ppm), probably due to the lattice distortion.
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10
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Schweicher G, Garbay G, Jouclas R, Vibert F, Devaux F, Geerts YH. Molecular Semiconductors for Logic Operations: Dead-End or Bright Future? ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1905909. [PMID: 31965662 DOI: 10.1002/adma.201905909] [Citation(s) in RCA: 57] [Impact Index Per Article: 14.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/10/2019] [Revised: 11/18/2019] [Indexed: 05/26/2023]
Abstract
The field of organic electronics has been prolific in the last couple of years, leading to the design and synthesis of several molecular semiconductors presenting a mobility in excess of 10 cm2 V-1 s-1 . However, it is also started to recently falter, as a result of doubtful mobility extractions and reduced industrial interest. This critical review addresses the community of chemists and materials scientists to share with it a critical analysis of the best performing molecular semiconductors and of the inherent charge transport physics that takes place in them. The goal is to inspire chemists and materials scientists and to give them hope that the field of molecular semiconductors for logic operations is not engaged into a dead end. To the contrary, it offers plenty of research opportunities in materials chemistry.
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Affiliation(s)
- Guillaume Schweicher
- Laboratoire de chimie des polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB) Boulevard du Triomphe, Brussels, 1050, Belgium
- Optoelectronics Group, Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Guillaume Garbay
- Laboratoire de chimie des polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB) Boulevard du Triomphe, Brussels, 1050, Belgium
| | - Rémy Jouclas
- Laboratoire de chimie des polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB) Boulevard du Triomphe, Brussels, 1050, Belgium
| | - François Vibert
- Laboratoire de chimie des polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB) Boulevard du Triomphe, Brussels, 1050, Belgium
| | - Félix Devaux
- Laboratoire de chimie des polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB) Boulevard du Triomphe, Brussels, 1050, Belgium
| | - Yves H Geerts
- Laboratoire de chimie des polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB) Boulevard du Triomphe, Brussels, 1050, Belgium
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Hiramoto M, Kikuchi M, Izawa S. Parts-per-Million-Level Doping Effects in Organic Semiconductor Films and Organic Single Crystals. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1801236. [PMID: 30118548 DOI: 10.1002/adma.201801236] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/23/2018] [Revised: 06/01/2018] [Indexed: 06/08/2023]
Abstract
Controlling the pn-type behavior of a semiconductor such as silicon by adding an extremely small quantity of an impurity (doping) is a central part of inorganic semiconductor electronics since the 20th century. Recent progress in the doping of organic semiconductors strongly suggests the advent of a new era of doped organic semiconductors. Here, the principles and effects of doping at the level of parts per million (ppm) in organic semiconductor films and single crystals are described, including descriptions of complete pn-control, doping sensitization, ppm doping using an extremely low-speed deposition technique reaching 10-9 nm s-1 , and emerging ppm-level doping effects, such as trap filling, majority carriers, homojunction formation, and decreased mobility, as well as ppm-level doping effects in organic single crystals measured by the Hall effect, which shows a doping efficiency of 24%. The Wannier excitonic doping of organic single crystals possessing band conduction and the defect science of organic single crystals related to carrier trapping and scattering are introduced as a new scientific field. The dawn of organic single-crystal electronics is also discussed.
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Affiliation(s)
- Masahiro Hiramoto
- Institute for Molecular Science, 5-1 Higashiyama, Myodaiji, Okazaki, 444-8787, Japan
| | - Mitsuru Kikuchi
- Institute for Molecular Science, 5-1 Higashiyama, Myodaiji, Okazaki, 444-8787, Japan
| | - Seiichiro Izawa
- Institute for Molecular Science, 5-1 Higashiyama, Myodaiji, Okazaki, 444-8787, Japan
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