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Hu P, Hu P, Vu TD, Li M, Wang S, Ke Y, Zeng X, Mai L, Long Y. Vanadium Oxide: Phase Diagrams, Structures, Synthesis, and Applications. Chem Rev 2023; 123:4353-4415. [PMID: 36972332 PMCID: PMC10141335 DOI: 10.1021/acs.chemrev.2c00546] [Citation(s) in RCA: 27] [Impact Index Per Article: 27.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/29/2023]
Abstract
Vanadium oxides with multioxidation states and various crystalline structures offer unique electrical, optical, optoelectronic and magnetic properties, which could be manipulated for various applications. For the past 30 years, significant efforts have been made to study the fundamental science and explore the potential for vanadium oxide materials in ion batteries, water splitting, smart windows, supercapacitors, sensors, and so on. This review focuses on the most recent progress in synthesis methods and applications of some thermodynamically stable and metastable vanadium oxides, including but not limited to V2O3, V3O5, VO2, V3O7, V2O5, V2O2, V6O13, and V4O9. We begin with a tutorial on the phase diagram of the V-O system. The second part is a detailed review covering the crystal structure, the synthesis protocols, and the applications of each vanadium oxide, especially in batteries, catalysts, smart windows, and supercapacitors. We conclude with a brief perspective on how material and device improvements can address current deficiencies. This comprehensive review could accelerate the development of novel vanadium oxide structures in related applications.
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Birkhölzer YA, Sotthewes K, Gauquelin N, Riekehr L, Jannis D, van der Minne E, Bu Y, Verbeeck J, Zandvliet HJW, Koster G, Rijnders G. High-Strain-Induced Local Modification of the Electronic Properties of VO 2 Thin Films. ACS APPLIED ELECTRONIC MATERIALS 2022; 4:6020-6028. [PMID: 36588623 PMCID: PMC9798830 DOI: 10.1021/acsaelm.2c01176] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/05/2022] [Accepted: 11/07/2022] [Indexed: 06/17/2023]
Abstract
Vanadium dioxide (VO2) is a popular candidate for electronic and optical switching applications due to its well-known semiconductor-metal transition. Its study is notoriously challenging due to the interplay of long- and short-range elastic distortions, as well as the symmetry change and the electronic structure changes. The inherent coupling of lattice and electronic degrees of freedom opens the avenue toward mechanical actuation of single domains. In this work, we show that we can manipulate and monitor the reversible semiconductor-to-metal transition of VO2 while applying a controlled amount of mechanical pressure by a nanosized metallic probe using an atomic force microscope. At a critical pressure, we can reversibly actuate the phase transition with a large modulation of the conductivity. Direct tunneling through the VO2-metal contact is observed as the main charge carrier injection mechanism before and after the phase transition of VO2. The tunneling barrier is formed by a very thin but persistently insulating surface layer of the VO2. The necessary pressure to induce the transition decreases with temperature. In addition, we measured the phase coexistence line in a hitherto unexplored regime. Our study provides valuable information on pressure-induced electronic modifications of the VO2 properties, as well as on nanoscale metal-oxide contacts, which can help in the future design of oxide electronics.
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Affiliation(s)
- Yorick A. Birkhölzer
- MESA+
Institute of Nanotechnology, University
of Twente, P.O. Box 217, 7500AEEnschede, The Netherlands
| | - Kai Sotthewes
- MESA+
Institute of Nanotechnology, University
of Twente, P.O. Box 217, 7500AEEnschede, The Netherlands
| | - Nicolas Gauquelin
- Electron
Microscopy for Materials Science (EMAT), University of Antwerp, Groenenborgerlaan 171, 2020Antwerp, Belgium
| | - Lars Riekehr
- Electron
Microscopy for Materials Science (EMAT), University of Antwerp, Groenenborgerlaan 171, 2020Antwerp, Belgium
| | - Daen Jannis
- Electron
Microscopy for Materials Science (EMAT), University of Antwerp, Groenenborgerlaan 171, 2020Antwerp, Belgium
| | - Emma van der Minne
- MESA+
Institute of Nanotechnology, University
of Twente, P.O. Box 217, 7500AEEnschede, The Netherlands
| | - Yibin Bu
- MESA+
Institute of Nanotechnology, University
of Twente, P.O. Box 217, 7500AEEnschede, The Netherlands
| | - Johan Verbeeck
- Electron
Microscopy for Materials Science (EMAT), University of Antwerp, Groenenborgerlaan 171, 2020Antwerp, Belgium
| | - Harold J. W. Zandvliet
- MESA+
Institute of Nanotechnology, University
of Twente, P.O. Box 217, 7500AEEnschede, The Netherlands
| | - Gertjan Koster
- MESA+
Institute of Nanotechnology, University
of Twente, P.O. Box 217, 7500AEEnschede, The Netherlands
| | - Guus Rijnders
- MESA+
Institute of Nanotechnology, University
of Twente, P.O. Box 217, 7500AEEnschede, The Netherlands
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Recent Advances in Fabrication of Flexible, Thermochromic Vanadium Dioxide Films for Smart Windows. NANOMATERIALS 2021; 11:nano11102674. [PMID: 34685109 PMCID: PMC8538595 DOI: 10.3390/nano11102674] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/30/2021] [Revised: 09/26/2021] [Accepted: 10/05/2021] [Indexed: 11/17/2022]
Abstract
Monoclinic-phase VO2 (VO2(M)) has been extensively studied for use in energy-saving smart windows owing to its reversible insulator–metal transition property. At the critical temperature (Tc = 68 °C), the insulating VO2(M) (space group P21/c) is transformed into metallic rutile VO2 (VO2(R) space group P42/mnm). VO2(M) exhibits high transmittance in the near-infrared (NIR) wavelength; however, the NIR transmittance decreases significantly after phase transition into VO2(R) at a higher Tc, which obstructs the infrared radiation in the solar spectrum and aids in managing the indoor temperature without requiring an external power supply. Recently, the fabrication of flexible thermochromic VO2(M) thin films has also attracted considerable attention. These flexible films exhibit considerable potential for practical applications because they can be promptly applied to windows in existing buildings and easily integrated into curved surfaces, such as windshields and other automotive windows. Furthermore, flexible VO2(M) thin films fabricated on microscales are potentially applicable in optical actuators and switches. However, most of the existing fabrication methods of phase-pure VO2(M) thin films involve chamber-based deposition, which typically require a high-temperature deposition or calcination process. In this case, flexible polymer substrates cannot be used owing to the low-thermal-resistance condition in the process, which limits the utilization of flexible smart windows in several emerging applications. In this review, we focus on recent advances in the fabrication methods of flexible thermochromic VO2(M) thin films using vacuum deposition methods and solution-based processes and discuss the optical properties of these flexible VO2(M) thin films for potential applications in energy-saving smart windows and several other emerging technologies.
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Wei L, Kuai X, Bao Y, Wei J, Yang L, Song P, Zhang M, Yang F, Wang X. The Recent Progress of MEMS/NEMS Resonators. MICROMACHINES 2021; 12:724. [PMID: 34205469 PMCID: PMC8235191 DOI: 10.3390/mi12060724] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/18/2021] [Revised: 06/13/2021] [Accepted: 06/14/2021] [Indexed: 01/22/2023]
Abstract
MEMS/NEMS resonators are widely studied in biological detection, physical sensing, and quantum coupling. This paper reviews the latest research progress of MEMS/NEMS resonators with different structures. The resonance performance, new test method, and manufacturing process of single or double-clamped resonators, and their applications in mass sensing, micromechanical thermal analysis, quantum detection, and oscillators are introduced in detail. The material properties, resonance mode, and application in different fields such as gyroscope of the hemispherical structure, microdisk structure, drum resonator are reviewed. Furthermore, the working principles and sensing methods of the surface acoustic wave and bulk acoustic wave resonators and their new applications such as humidity sensing and fast spin control are discussed. The structure and resonance performance of tuning forks are summarized. This article aims to classify resonators according to different structures and summarize the working principles, resonance performance, and applications.
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Affiliation(s)
- Lei Wei
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (L.W.); (X.K.); (Y.B.); (J.W.); (L.Y.); (P.S.); (M.Z.); (F.Y.)
- The School of Microelectronics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xuebao Kuai
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (L.W.); (X.K.); (Y.B.); (J.W.); (L.Y.); (P.S.); (M.Z.); (F.Y.)
- School of Microelectronics, University of Science and Technology of China, Hefei 230026, China
| | - Yidi Bao
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (L.W.); (X.K.); (Y.B.); (J.W.); (L.Y.); (P.S.); (M.Z.); (F.Y.)
- The School of Microelectronics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jiangtao Wei
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (L.W.); (X.K.); (Y.B.); (J.W.); (L.Y.); (P.S.); (M.Z.); (F.Y.)
| | - Liangliang Yang
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (L.W.); (X.K.); (Y.B.); (J.W.); (L.Y.); (P.S.); (M.Z.); (F.Y.)
- The School of Microelectronics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Peishuai Song
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (L.W.); (X.K.); (Y.B.); (J.W.); (L.Y.); (P.S.); (M.Z.); (F.Y.)
- The School of Microelectronics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Mingliang Zhang
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (L.W.); (X.K.); (Y.B.); (J.W.); (L.Y.); (P.S.); (M.Z.); (F.Y.)
- The School of Microelectronics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Fuhua Yang
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (L.W.); (X.K.); (Y.B.); (J.W.); (L.Y.); (P.S.); (M.Z.); (F.Y.)
- The School of Microelectronics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Beijing Academy of Quantum Information Science, Beijing 100193, China
- Beijing Engineering Research Center of Semiconductor Micro-Nano Integrated Technology, Beijing 100083, China
| | - Xiaodong Wang
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (L.W.); (X.K.); (Y.B.); (J.W.); (L.Y.); (P.S.); (M.Z.); (F.Y.)
- The School of Microelectronics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Beijing Academy of Quantum Information Science, Beijing 100193, China
- Beijing Engineering Research Center of Semiconductor Micro-Nano Integrated Technology, Beijing 100083, China
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Manca N, Kanki T, Endo F, Marré D, Pellegrino L. Planar Nanoactuators Based on VO 2 Phase Transition. NANO LETTERS 2020; 20:7251-7256. [PMID: 32845156 DOI: 10.1021/acs.nanolett.0c02638] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Actuation at micro- and nanoscale often requires large displacements and applied forces. The high work energy density that lies inside many phase transitions is an appealing feature for developing new actuating schemes, especially if the transition is reversible and scalable into small actuating domains. Here, we show the fabrication of a planar nanomechanical actuator having chevron-type geometry and based on the phase transition of VO2. This device is thermally activated through heating just above room temperature to trigger the VO2 crystalline symmetry change associated with the metal-insulator transition. The large lattice expansion of VO2 phase transition, compared to standard materials, is further amplified by the chevron-type geometry. DC and AC operation of the device are discussed.
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Affiliation(s)
- Nicola Manca
- CNR-SPIN, C.so F. M. Perrone 24, 16152 Genova, Italy
- Dipartimento di Fisica, Università degli Studi di Genova, via Dodecaneso 33, 16146 Genova, Italy
| | - Teruo Kanki
- Institute of Scientific and Industrial Research, Osaka University, Mihogaoka Ibaraki 8-1, Osaka 567-0047, Japan
| | - Fumiya Endo
- Institute of Scientific and Industrial Research, Osaka University, Mihogaoka Ibaraki 8-1, Osaka 567-0047, Japan
| | - Daniele Marré
- CNR-SPIN, C.so F. M. Perrone 24, 16152 Genova, Italy
- Dipartimento di Fisica, Università degli Studi di Genova, via Dodecaneso 33, 16146 Genova, Italy
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Ke Y, Wang S, Liu G, Li M, White TJ, Long Y. Vanadium Dioxide: The Multistimuli Responsive Material and Its Applications. SMALL 2018; 14:e1802025. [PMID: 30085392 DOI: 10.1002/smll.201802025] [Citation(s) in RCA: 48] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/27/2018] [Revised: 06/24/2018] [Indexed: 05/12/2023]
Affiliation(s)
- Yujie Ke
- School of Materials Science and Engineering; Nanyang Technological University; 50 Nanyang Avenue Singapore 639798 Singapore
| | - Shancheng Wang
- School of Materials Science and Engineering; Nanyang Technological University; 50 Nanyang Avenue Singapore 639798 Singapore
| | - Guowei Liu
- School of Materials Science and Engineering; Nanyang Technological University; 50 Nanyang Avenue Singapore 639798 Singapore
| | - Ming Li
- School of Materials Science and Engineering; Nanyang Technological University; 50 Nanyang Avenue Singapore 639798 Singapore
- Key Laboratory of Materials Physics; Anhui Key Laboratory of Nanomaterials and Nanotechnology; Institute of Solid State Physics; Chinese Academy of Sciences; Hefei 230031 P. R. China
| | - Timothy J. White
- School of Materials Science and Engineering; Nanyang Technological University; 50 Nanyang Avenue Singapore 639798 Singapore
| | - Yi Long
- School of Materials Science and Engineering; Nanyang Technological University; 50 Nanyang Avenue Singapore 639798 Singapore
- Singapore-HUJ Alliance for Research and Enterprise (SHARE); Nanomaterials for Energy and Energy-Water Nexus (NEW); Campus for Research Excellence and Technological Enterprise (CREATE); 1 Create Way Singapore 138602 Singapore
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Hou Y, Xiao R, Tong X, Dhuey S, Yu D. In Situ Visualization of Fast Surface Ion Diffusion in Vanadium Dioxide Nanowires. NANO LETTERS 2017; 17:7702-7709. [PMID: 29131965 DOI: 10.1021/acs.nanolett.7b03832] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/15/2023]
Abstract
We investigate in situ ion diffusion in vanadium dioxide (VO2) nanowires (NWs) by using photocurrent imaging. Alkali metal ions are injected into a NW segment via ionic liquid gating and are shown to diffuse along the NW axis. The visualization of ion diffusion is realized by spatially resolved photocurrent measurements, which detect the charge carrier density change associated with the ion incorporation. Diffusion constants are determined to be on the order of 10-10 cm2/s for both Li+ and Na+ ions at room temperature, while H+ diffuses much slower. The ion diffusion is also found to occur mainly at the surface of the NWs, as metal contacts can effectively block the ion diffusion. This novel method of visualizing ion distribution is expected to be applied to study ion diffusion in a broad range of materials, providing key insights on phase transition electronics and energy storage applications.
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Affiliation(s)
- Yasen Hou
- Department of Physics, University of California , Davis, California 95616, United States
| | - Rui Xiao
- Department of Physics, University of California , Davis, California 95616, United States
| | - Xin Tong
- School of Physics, Peking University , Beijing 100871, People's Republic of China
| | - Scott Dhuey
- The Molecular Foundry, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States
| | - Dong Yu
- Department of Physics, University of California , Davis, California 95616, United States
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