Promising Thermoelectric Bulk Materials with 2D Structures

Band Degeneracy and Anisotropy Enhances Thermoelectric Performance from Sb2Si2Te6 to Sc2Si2Te6

The complex interrelationships among thermoelectric parameters mean that a priori design of high-performing materials is difficult. However, band engineering can allow the power factor to be optimized through enhancement of the Seebeck coefficient. Herein, using layered Sb2Si2Te6 and Sc2Si2Te6 as model systems, we comprehensively investigate and compare their thermoelectric properties by employing density functional theory combined with semiclassical Boltzmann transport theory. Our simulations reveal that Sb2Si2Te6 exhibits superior electrical conductivity compared to Sc2Si2Te6 due to lower scattering rates and more pronounced band dispersion. Remarkably, despite Sb2Si2Te6 exhibiting a lower lattice thermal conductivity and superior electrical conductivity, Sc2Si2Te6 is predicted to achieve an extraordinary dimensionless figure of merit (ZT) of 3.51 at 1000 K, which significantly surpasses the predicted maximum ZT of 2.76 for Sb2Si2Te6 at 900 K. We find the origin of this behavior to be a combined increase in band (valley) degeneracy and anisotropy upon switching the conduction band orbital character from Sb p to Sc d, yielding a significantly improved Seebeck coefficient. This work suggests that enhancing band degeneracy and anisotropy (complexity) through compositional variation is an effective strategy for improving the thermoelectric performance of layered materials.

CdSe Quantum Dots Enable High Thermoelectric Performance in Solution-Processed Polycrystalline SnSe

Here, a high peak ZT of ≈2.0 is reported in solution-processed polycrystalline Ge and Cd codoped SnSe. Microstructural characterization reveals that CdSe quantum dots are successfully introduced by solution process method. Ultraviolet photoelectron spectroscopy evinces that CdSe quantum dots enhance the density of states in the electronic structure of SnSe, which leads to a large Seebeck coefficient. It is found that Ge and Cd codoping simultaneously optimizes carrier concentration and improves electrical conductivity. The enhanced Seebeck coefficient and optimization of carrier concentration lead to marked increase in power factor. CdSe quantum dots combined with strong lattice strain give rise to strong phonon scattering, leading to an ultralow lattice thermal conductivity. Consequently, high thermoelectric performance is realized in solution-processed polycrystalline SnSe by designing quantum dot structures and introducing lattice strain. This work provides a new route for designing prospective thermoelectric materials by microstructural manipulation in solution chemistry.

Lattice Plainification Leads to High Thermoelectric Performance of P-Type PbSe Crystals

Thermoelectrics has applications in power generation and refrigeration. Since only commercial Bi2Te3 has a low abundance Te, PbSe gets attention. This work enhances the near-room temperature performance of p-type PbSe through enhancing carrier mobility via lattice plainification. Composition controlled and Cu-doped p-type PbSe crystals are grown through physical vapor deposition. Results exhibit an enhanced carrier mobility ≈2578 cm2 V-1 s-1 for Pb0.996Cu0.0004Se. Microstructure characterization and density functional theory calculations verify the introduced Cu atoms filled Pb vacancies, realizing lattice plainification and enhancing the carrier mobility. The Pb0.996Cu0.0004Se sample achieves a power factor ≈42 µW cm-1 K-2 and a ZT ≈ 0.7 at 300 K. The average ZT of it reaches ≈0.9 (300-573 K), resulting in a single-leg power generation efficiency of 7.1% at temperature difference of 270 K, comparable to that of p-type commercial Bi2Te3. A 7-pairs device paired the p-type Pb0.996Cu0.0004Se with the n-type commercial Bi2Te3 shows a maximum cooling temperature difference ≈42 K with the hot side at 300 K, ≈65% of that of the commercial Bi2Te3 device. This work highlights the potential of p-type PbSe for power generation and refrigeration near room temperature and hope to inspire researchers on replacing commercial Bi2Te3.

All-SnTe-Based Thermoelectric Power Generation Enabled by Stepwise Optimization of n-Type SnTe

The practical application of thermoelectric devices requires both high-performance n-type and p-type materials of the same system to avoid possible mismatches and improve device reliability. Currently, environmentally friendly SnTe thermoelectrics have witnessed extensive efforts to develop promising p-type transport, making it rather urgent to investigate the n-type counterparts with comparable performance. Herein, we develop a stepwise optimization strategy for improving the transport properties of n-type SnTe. First, we improve the n-type dopability of SnTe by PbSe alloying to narrow the band gap and obtain n-type transport in SnTe with halogen doping over the whole temperature range. Then, we introduce additional Pb atoms to compensate for the cationic vacancies in the SnTe-PbSe matrix, further enhancing the electron carrier concentration and electrical performance. Resultantly, the high-ranged thermoelectric performance of n-type SnTe is substantially optimized, achieving a peak ZT of ∼0.75 at 573 K with a high average ZT (ZTave) exceeding 0.5 from 300 to 823 K in the (SnTe0.98I0.02)0.6(Pb1.06Se)0.4 sample. Moreover, based on the performance optimization on n-type SnTe, for the first time, we fabricate an all-SnTe-based seven-pair thermoelectric device. This device can produce a maximum output power of ∼0.2 W and a conversion efficiency of ∼2.7% under a temperature difference of 350 K, demonstrating an important breakthrough for all-SnTe-based thermoelectric devices. Our research further illustrates the effectiveness and application potential of the environmentally friendly SnTe thermoelectrics for mid-temperature power generation.

Extremely Low Lattice Thermal Conductivity Leading to Superior Thermoelectric Performance in Cu4TiSe4

Low thermal conductivity is crucial for obtaining a promising thermoelectric (TE) performance in semiconductors. In this work, the TE properties of Cu₄TiS₄ and Cu₄TiSe₄ were theoretically investigated by carrying out first-principles calculations and solving Boltzmann transport equations. The calculated results reveal a lower sound velocity in Cu₄TiSe₄ compared to that in Cu₄TiS₄, which is due to the weaker chemical bonds in the crystal orbital Hamilton population (COHP) and also the larger atomic mass in Cu₄TiSe₄. In addition, the strong lattice anharmonicity in Cu₄TiSe₄ enhances phonon-phonon scattering, which shortens the phonon relaxation time. All of these factors lead to an extremely low lattice thermal conductivity (κ_L) of 0.11 W m^-1 K^-1 at room temperature in Cu₄TiSe₄ compared with that of 0.58 W m^-1 K^-1 in Cu₄TiS₄. Owing to the suitable band gaps of Cu₄TiS₄ and Cu₄TiSe₄, they also exhibit great electrical transport properties. As a result, the optimal ZT values for p (n)-type Cu₄TiSe₄ are up to 2.55 (2.88) and 5.04 (5.68) at 300 and 800 K, respectively. For p (n)-type Cu₄TiS₄, due to its low κ_L, the ZT can also reach high values over 2 at 800 K. The superior thermoelectric performance in Cu₄TiSe₄ demonstrates its great potential for applications in thermoelectric conversion.

Boosting the Thermoelectric Performance of the Doped DPP-EDOT Conjugated Polymer by Incorporating an Ionic Additive

The thermoelectric (TE) performance of organic materials is limited by the coupling of Seebeck coefficient and electrical conductivity. Herein a new strategy is reported to boost the Seebeck coefficient of conjugated polymer without significantly reducing the electrical conductivity by incorporation of an ionic additive DPPNMe₃ Br. The doped polymer PDPP-EDOT thin film exhibits high electrical conductivity up to 1377 ± 109 S cm^-1 but low Seebeck coefficient below 30 µV K^-1 and a maximum power factor of 59 ± 10 µW m^-1 K^-2 . Interestingly, incorporation of small amount (at a molar ratio of 1:30) of DPPNMe₃ Br into PDPP-EDOT results in the significant enhancement of Seebeck coefficient along with the slight decrease of electrical conductivity after doping. Consequently, the power factor (PF) is boosted to 571 ± 38 µW m^-1 K^-2 and ZT reaches 0.28 ± 0.02 at 130 °C, which is among the highest for the reported organic TE materials. Based on the theoretical calculation, it is assumed that the enhancement of TE performance for the doped PDPP-EDOT by DPPNMe₃ Br is mainly attributed to the increase of energetic disorder for PDPP-EDOT.

Advanced Strategies in Synthesis of Two-Dimensional Materials with Different Compositions and Phases

In recent years, 2D materials-M_a X_b with different compositions and phases have attracted tremendous attention due to their diverse structures and electronic features. The common thermodynamically stable 2H and metastable 1T phases have been extensively studied, however, there are many unusual compositions and phases with novel physical properties that have yet to be explored. Therefore, summarization of the synthesis strategies, atomic structures, and the unique physical properties of 2D materials with different compositions and phases is very important for their development. In this review, the strategies including chemical vapor deposition, intercalation, atomic layer deposition, chemical vapor transport, and electrostatic gating for synthesizing various 2D materials with different phases and compositions are first summarized. Specially, the intercalation strategies including heterogeneous- and self-intercalation for controllable phases and compositions fabrication are mainly discussed. Then, the novel atomic structures of 2D materials are analyzed, followed by the fascinating physical properties including ferroelectricity, ferromagnetism, superconductivity, and so on. Finally, the conclusion and outlook are offered including the challenges and future prospects of 2D materials with different compositions and phases.

Advances in Thermoelectric Composites Consisting of Conductive Polymers and Fillers with Different Architectures

Stretchable wireless power is in increasingly high demand in fields such as smart devices, flexible robots, and electronic skins. Thermoelectric devices are able to convert heat into electricity due to the Seebeck effect, making them promising candidates for wearable electronics. Therefore, high-performance conductive polymer-based composites are urgently required for flexible wearable thermoelectric devices for the utilization of low-grade thermal energy. In this review, mechanisms and optimization strategies for polymer-based thermoelectric composites containing fillers of different architectures will be introduced, and recent advances in the development of such thermoelectric composites containing 0- to 3-dimensional filler components will be presented and outlooked.

Inkjet printing of two-dimensional van der Waals materials: a new route towards emerging electronic device applications

Two-dimensional (2D) van der Waals (vdW) materials are considered one of the most promising candidates to realize emerging electrical applications. Although until recently, much effort has been dedicated to demonstrating high-performance single 2D vdW devices, associated with rapid progress in 2D vdW materials, demands for their large-scale practical applications have noticeably increased from a manufacturing perspective. Drop-on-demand inkjet printing can be the most feasible solution by exploiting the advantages of layered 2D contacts and advanced 2D vdW ink formulations. This review presents recent achievements in inkjet-printed 2D vdW material-based device applications. A brief introduction to 2D vdW materials and inkjet printing principles, followed by various ink formulation methods, is first presented. Then, the state-of-the-art inkjet-printed 2D vdW device applications and their remaining technical issues are highlighted. Finally, prospects and challenges to be overcome to demonstrate fully inkjet-printed, high-performance 2D vdW devices are also discussed.

Aliovalent Dilute Doping and Nano-Moiré Fringe Advance the Structural Stability and Thermoelectric Performance in β-Zn4Sb3

Thermoelectric (TE) generators have come a long way since the first commercial apparatus launched in the 1950s. Since then, the β-Zn4Sb3 has manifested its potential as a cost-effective and environmentally friendly TE generator compared with the tellurium-bearing TE materials. Although the β-Zn4Sb3 features an intrinsically low thermal conductivity κ, it suffers from a long-lasting structural instability issue arising from the highly mobile zinc ions. Herein, the dilute Ga dopant gives rise to the aliovalent substitution, lowers the mobile zinc ions, and optimizes the hole carrier concentration n H simultaneously. Meanwhile, the formation of nano-moiré fringes suggests the modulated distribution of point defect that results from soluble Ga in a β-Zn4Sb3 lattice, which elicits an ultralow lattice thermal conductivity κ L = 0.2 W m-1 K-1 in a (Zn0.992Ga0.008)4Sb3 alloy. Hence, a fully dense β-Zn4Sb3 incorporated with the dilute Ga doping reveals superior structural stability with a peak zT > 1.4 at 623 K. In this work, the aliovalent dilute doping coupled with phase diagram engineering optimizes the fluxes of moving electrons and charged ions, which stabilizes the single-phase β-Zn4Sb3 while boosting the TE performance at the mid-temperature region. The synergistic strategies endow the ionic crystals with a thermodynamic route, which opens up a new category for high-performance and thermal robust TE alloys.

Synergistic Manipulation of Interdependent Thermoelectric Parameters in SnTe-AgBiTe2 Alloys by Mn Doping

In the mid-temperature region, SnTe is a promising substitute for PbTe, whereas the thermoelectric (TE) property of pristine SnTe is severely limited by the good thermal conductivity and inferior Seebeck coefficient. In this research, we synergistically manipulate the interdependent TE parameters of SnTe-AgBiTe₂ alloys by Mn doping to increase the ZT value. The AgBiTe₂ alloying is found to greatly reduce the electrical conductivity and electronic contribution for thermal transport by reducing the carrier mobility, while Mn doping obviously improves the Seebeck coefficient by effectively decreasing the valence band offset. The lowest κ_l of Mn-doped SnTe-AgBiTe₂ alloys is 0.49 W m^-1 K^-1 at 823 K since the various defects strengthen the phonon scattering. Collectively, these manipulations yield a peak ZT value of 1.40 at 823 K and an average ZT value of 0.73 (300-823 K) in the Mn-doped SnTe-AgBiTe₂ alloys. This research suggests that Mn doping is a valid scheme to constantly improve the thermoelectric property of SnTe-AgBiTe₂ alloys in a wide temperature range.

Insights into Low Thermal Conductivity in Inorganic Materials for Thermoelectrics

Efficient manipulation of thermal conductivity and fundamental understanding of the microscopic mechanisms of phonon scattering in crystalline solids are crucial to achieve high thermoelectric performance. Thermoelectric energy conversion directly and reversibly converts between heat and electricity and is a promising renewable technology to generate electricity by recovering waste heat and improve solid-state refrigeration. However, a unique challenge in thermal transport needs to be addressed to achieve high thermoelectric performance: the requirement of crystalline materials with ultralow lattice thermal conductivity (κ_L). A plethora of strategies have been developed to lower κ_L in crystalline solids by means of nanostructural modifications, introduction of intrinsic or extrinsic phonon scattering centers with tailored shape and dimension, and manipulation of defects and disorder. Recently, intrinsic local lattice distortion and lattice anharmonicity originating from various mechanisms such as rattling, bonding heterogeneity, and ferroelectric instability have found popularity. In this Perspective, we outline the role of manipulation of chemical bonding and structural chemistry on thermal transport in various high-performance thermoelectric materials. We first briefly outline the fundamental aspects of κ_L and discuss the current status of the popular phonon scattering mechanisms in brief. Then we discuss emerging new ideas with examples of crystal structure and lattice dynamics in exemplary materials. Finally, we present an outlook for focus areas of experimental and theoretical challenges, possible new directions, and integrations of novel techniques to achieve low κ_L in order to realize high-performance thermoelectric materials.

Investigations on the thermoelectric and thermodynamic properties of Y2CT2 (T = O, F, OH)

Using the first-principle calculations combined with the Boltzmann transport theory, we studied the thermoelectric properties of Y2CT2 (T = O, F, OH) MXenes. Specifically, the Seebeck coefficient, thermal and electrical conductivities under constant relaxation time approximation were calculated. Results show that for p-type carriers, Y2CO2 has the largest power factor of up to 0.0017 W m-1 K-2 when the carrier concentration is 4.067 × 1013 cm-2 at 900 K, at the same temperature, for n-type carriers, the concentration is 9.376 × 1013 cm-2, the power factor in Y2C(OH)2 is 0.0026 W m-1 K-2. In particular, the figure of merit in Y2CF2 is 1.38 at 900 K because of its low thermal conductivity, indicating that it can be considered a potential medium-temperature thermoelectric material. In addition, the thermodynamics properties within 32 GPa and 900 K, such as bulk modulus, heat capacity and thermal expansion, are also estimated using the quasi-harmonic Debye model. Our results may offer some valuable hints for the potential application of Y2CT2 (T = O, F, OH) in the thermoelectric field.

Multifunctional Superelastic Graphene-Based Thermoelectric Sponges for Wearable and Thermal Management Devices

Power generation through harvesting human thermal energy provides an ideal strategy for self-powered wearable design. However, existing thermoelectric fibers, films, and blocks have small power generation capacity and poor flexibility, which hinders the development of self-powered wearable electronics. Here, we report a multifunctional superelastic graphene-based thermoelectric (TE) sponge for wearable electronics and thermal management. The sponge has a high Seebeck coefficient of 49.2 μV/K and a large compressive strain of 98%. After 10 000 cyclic compressions at 30% strain, the sponge shows excellent mechanical and TE stability. A wearable sponge array TE device was designed to drive medical equipment for monitoring physiological signals by harvesting human thermal energy. Furthermore, a 4 × 4 array TE device placed on the surface of a normal working Central Processing Unit (CPU) can generate a stable voltage and reduce the CPU temperature by 8 K, providing a feasible strategy for simultaneous power generation and thermal management.

Four-Phonon Scattering Effect and Two-Channel Thermal Transport in Two-Dimensional Paraelectric SnSe

In recent years, increased attention has been paid to the study of four-phonon interactions and diffusion transport in three-dimensional (3D) thermoelectric materials because they play an essential role in understanding the thermal transport process. In this work, we study four-phonon scattering and diffusion transport in two-dimensional (2D) thermoelectric materials using the paraelectric phase of 2D SnSe as an example. The inherent soft phonon modes are treated by the self-consistent phonon theory, which considers the temperature-induced renormalization of the phonons. Based on density functional theory and the Peierls-Boltzmann transport equation for phonons, we show that the four-phonon interactions can reduce the thermal conductivity of the 2D SnSe sheet by nearly 40% due to the collapse of soft optical modes, and the contribution of diffusion transport to the total thermal conductivity accounts for 14% at a high temperature of 800 K due to the short phonon mean free path approaching the Ioffe-Regel limit, suggesting the two-channel transport in this system. The results are further confirmed by using the machine learning-assisted molecular dynamics simulations. This work provides a new insight into the physical mechanisms for thermal transport in 2D systems with strong anharmonic effects.

Stability, optoelectronic and thermal properties of two-dimensional Janusα-Te2S

Motivated by recent progress in the two-dimensional (2D) materials of group VI elements and their experimental fabrication, we have investigated the stability, optoelectronic and thermal properties of Janusα-Te₂S monolayer using first-principles calculations. The phonon dispersion and MD simulations confirm its dynamical and thermal stability. The moderate band gap (∼1.5 eV), ultrahigh carrier mobility (∼10³cm²V^-1s^-1), small exciton binding energy (0.26 eV), broad optical absorption range and charge carrier separation ability due to potential difference (ΔV = 1.07 eV) on two surfaces of Janusα-Te₂S monolayer makes it a promising candidate for solar energy conversion. We propose various type-II heterostructures consisting of Janusα-Te₂S and other transition metal dichalcogenides for solar cell applications. The calculated power conversion efficiencies of the proposed heterostructures, i.e.α-Te₂S/T-PdS₂,α-Te₂S/BP andα-Te₂S/H-MoS₂are ∼21%, ∼19% and 18%, respectively. Also, the ultralow value of lattice thermal conductivity (1.16 W m^-1K^-1) of Janusα-Te₂S makes it a promising material for the fabrication of next-generation thermal energy conversion devices.

Periodic DLC Interlayer-Functionalized Bi-Sb-Te-Based Nanostructures: A Novel Concept for Building Heterogenized Superarchitectures with Enhanced Thermoelectric Performance

According to the innovative design concept of omnidirectional quasi-order hetero-nanocomposites proposed for potentially realizing high thermoelectric performance, a series of superarchitectures consisting of longitudinally periodic diamond-like carbon (DLC) interlayers in latitudinally well-aligned Bi-Sb-Te (BST)-based nanostructures were successfully demonstrated for the first time using dual-beam pulsed laser deposition. This work confirmed that the periodic appearance of DLC is a practical approach to instantly resetting the BST deposition into another new crystal growth cycle. The optimized Seebeck coefficient of ∼500 μV K^-1 and the corresponding power factor of ∼40 μW cm^-1 K^-2 achieved are comparable to or higher than the reported values for BST or BST-based nanocomposites, which evidently originated from the periodically added DLC, as clarified in the Pisarenko plot. In addition, the DLC additives effectively reduce the thermal transport as qualitatively evidenced by micro-Raman characterizations.

Ultrabroadband Tellurium Photoelectric Detector from Visible to Millimeter Wave

Ultrabroadband photodetection is of great significance in numerous cutting-edge technologies including imaging, communications, and medicine. However, since photon detectors are selective in wavelength and thermal detectors are slow in response, developing high performance and ultrabroadband photodetectors is extremely difficult. Herein, one demonstrates an ultrabroadband photoelectric detector covering visible, infrared, terahertz, and millimeter wave simultaneously based on single metal-Te-metal structure. Through the two kinds of photoelectric effect synergy of photoexcited electron-hole pairs and electromagnetic induced well effect, the detector achieves the responsivities of 0.793 A W-1 at 635 nm, 9.38 A W-1 at 1550 nm, 9.83 A W-1 at 0.305 THz, 24.8 A W-1 at 0.250 THz, 87.8 A W-1 at 0.172 THz, and 986 A W-1 at 0.022 THz, respectively. It also exhibits excellent polarization detection with a dichroic ratio of 468. The excellent performance of the detector is further verified by high-resolution imaging experiments. Finally, the high stability of the detector is tested by long-term deposition in air and high-temperature aging. The strategy provides a recipe to achieve ultrabroadband photodetection with high sensitivity and fast response utilizing full photoelectric effect.

Realizing High Thermoelectric Performance in p-Type SnSe Crystals via Convergence of Multiple Electronic Valence Bands

SnSe crystals have gained considerable interest for their outstanding thermoelectric performance. Here, we achieve excellent thermoelectric properties in Sn_0.99-xPb_xZn_0.01Se crystals via valence band convergence and point-defect engineering strategies. We demonstrate that Pb and Zn codoping converges the energy offset between multiple valence bands by significantly modifying the band structure, contributing to the enhancement of the Seebeck coefficient. The carrier concentration and electrical conductivity can be optimized, leading to an enhanced power factor. The dual-atom point-defect effect created by the substitution of Pb and Zn in the SnSe lattice introduces strong phonon scattering, significantly reducing the lattice thermal conductivity to as low as 0.284 W m^-1 K^-1. As a result, a maximum ZT value of 1.9 at 773 K is achieved in Sn_0.93Pb_0.06Zn_0.01Se crystals along the bc-plane direction. This study highlights the crucial role of manipulating multiple electronic valence bands in further improving SnSe thermoelectrics.

High-Performance Thermoelectrics Based on Solution-Grown SnSe Nanostructures

Two-dimensional layered tin selenide (SnSe) has attracted immense interest in thermoelectrics due to its ultralow lattice thermal conductivity and high thermoelectric performance. To date, the majority of thermoelectric studies of SnSe have been based on single crystals. However, because synthesizing SnSe single crystals is an expensive, time-consuming process that requires high temperatures and because SnSe single crystals have relatively weaker mechanical stability, they are not favorable for scaling up synthesis, commercialization, or practical applications. As a result, research on nanocrystalline SnSe that can be produced in large quantities by simple and low-temperature solution-phase synthesis is needed. In this Perspective, we discuss the progress in thermoelectric properties of SnSe with a particular emphasis on nanocrystalline SnSe, which is grown in solution. We first describe the state-of-the-art high-performance single crystal and polycrystals of SnSe and their importance and drawbacks and discuss how nanocrystalline SnSe can solve some of these challenges. We illustrate different solution-phase synthesis procedures to produce various SnSe nanostructures and discuss their thermoelectric properties. We also highlight a unique solution-phase synthesis technique to prepare CdSe-coated SnSe nanocomposites and its unprecedented thermoelectric figure of merit (ZT) of 2.2 at 786 K, as reported in this issue of ACS Nano. In general, solution synthesis showed excellent control over nanoscale grain growth, and nanocrystalline SnSe shows ultralow thermal conductivity due to strong phonon scattering by the nanoscale grain boundaries. Finally, we offer insight into the opportunities and challenges associated with nanocrystalline SnSe synthesized by the solution route and its future in thermoelectric energy conversion.

Recent progress of self-powered respiration monitoring systems

Wearable and implantable medical devices are playing more and more key roles in disease diagnosis and health management. Various biosensors and systems have been used for respiration monitoring. Among them, self-powered sensors have some special characteristics such as low-cost, easy preparation, highly designable, and diversified. The respiratory airflow can drive the self-powered sensors directly to convert mechanical energy of the airflow into electricity. One of the major goals of the self-powered sensors and systems is realizing health monitoring and diagnosis. The relationship between the output signals and the models of respiratory diseases has not been studied deeply and clearly. Therefore, how to find an accurate relationship between them is a challenging and significant research topic. This review summarized the recent progress of the self-powered respiratory sensors and systems from aspects of device principle, output property, detecting index and so on. The challenges and perspectives have also been discussed for reference to the researchers who are interested in the field of self-powered sensors.

Emphanisis in Cubic (SnSe)0.5(AgSbSe2)0.5: Dynamical Off-Centering of Anion Leads to Low Thermal Conductivity and High Thermoelectric Performance

The structural transformation generally occurs from lower symmetric to higher symmetric structure on heating. However, the formation of locally broken asymmetric phases upon warming has been evidenced in PbQ (Q = S, Se, Te), a rare phenomenon called emphanisis, which has significant effect on their thermal transport and thermoelectric properties. (SnSe)_0.5(AgSbSe₂)_0.5 crystallizes in rock-salt cubic average structure, with the three cations occupying the same Wycoff site (4a) and Se in the anion position (Wycoff site, 4b). Using synchrotron X-ray pair distribution function (X-PDF) analysis, herein, we show the gradual deviation of the local structure of (SnSe)_0.5(AgSbSe₂)_0.5 from the overall cubic rock-salt structure with warming, resembling emphanisis. The local structural analysis indicates that Se atoms remain in off-centered position by a magnitude of ∼0.25 Å at 300 K along the [111] direction and the magnitude of this distortion is found to increase with temperature resulting in three short and three long M-Se bonds (M = Sn/Ag/Sb) within the average rock-salt lattice. This hinders phonon propagation and lowers the lattice thermal conductivity (κ_lat) to 0.49-0.39 W/(m·K) in the 295-725 K range. Analysis of phonons based on density functional theory (DFT) reveals significant soft modes with high anharmonicity which involve localized Ag and Se vibrations primarily. Emphanisis induced low κ_lat and favorable electronic structure with multiple valence band extrema within close energy concurrently give rise to a promising thermoelectric figure of merit (zT) of 1.05 at 706 K in p-type carrier optimized Ge doped new rock-salt phase of (SnSe)_0.5(AgSbSe₂)_0.5.

Modulation of the electronic structure and thermoelectric properties of orthorhombic and cubic SnSe by AgBiSe2 alloying

Recently, single-crystals of tin selenide (SnSe) have drawn immense attention in the field of thermoelectrics due to their anisotropic layered crystal structure and ultra-low lattice thermal conductivity. Layered SnSe has an orthorhombic crystal structure (Pnma) at ambient conditions. However, the cubic rock-salt phase (Fm3̄m) of SnSe can only be stabilized at very high pressure and thus, the experimental realization of the cubic phase remains elusive. Herein, we have successfully stabilized the high-pressure cubic rock-salt phase of SnSe by alloying with AgBiSe₂ (0.30 ≤ x ≤ 0.80) at ambient temperature and pressure. The orthorhombic polycrystalline phase is stable in (SnSe)_1−x(AgBiSe₂)_x in the composition range of 0.00 ≤ x < 0.28, which corresponds to narrow band gap semiconductors, whereas the band gap closes upon increasing the concentration of AgBiSe₂ (0.30 ≤ x < 0.70) leading to the cubic rock-salt structure. We confirmed the stabilization of the cubic structure at x = 0.30 and associated changes in the electronic structure using first-principles theoretical calculations. The pristine cubic SnSe exhibited the topological crystalline insulator (TCI) quantum phase, but the cubic (SnSe)_1−x(AgBiSe₂)_x (x = 0.33) showed a semi-metallic electronic structure with overlapping conduction and valence bands. The cubic polycrystalline (SnSe)_1−x(AgBiSe₂)_x (x = 0.30) sample showed n-type conduction at room temperature, while the orthorhombic (SnSe)_1−x(AgBiSe₂)_x (0.00 ≤ x < 0.28) samples retained p-type character. Thus, by optimizing the electronic structure and the thermoelectric properties of polycrystalline SnSe, a high zT of 1.3 at 823 K has been achieved in (SnSe)_0.78(AgBiSe₂)_0.22.

AgBiSe₂ alloying in SnSe tailors its crystal and electronic structures, which boost its thermoelectric figure of merit to 1.3.

Intercalation Strategy in 2D Materials for Electronics and Optoelectronics

Intercalation is an effective approach to tune the physical and chemical properties of 2D materials due to their abundant van der Waals gaps that can host high-density intercalated guest matters. This approach has been widely employed to modulate the optical, electrical, and photoelectrical properties of 2D materials for their applications in electronic and optoelectronic devices. Thus it is necessary to review the recent progress of the intercalation strategy in 2D materials and their applications in devices. Herein, various intercalation strategies and the novel properties of the intercalated 2D materials as well as their applications in electronics and optoelectronics are summarized. In the end, the development tendency of this promising approach for 2D materials is also outlined.

Defect engineering in thermoelectric materials: what have we learned?

Thermoelectric energy conversion is an all solid-state technology that relies on exceptional semiconductor materials that are generally optimized through sophisticated strategies involving the engineering of defects in their structure. In this review, we summarize the recent advances of defect engineering to improve the thermoelectric (TE) performance and mechanical properties of inorganic materials. First, we introduce the various types of defects categorized by dimensionality, i.e. point defects (vacancies, interstitials, and antisites), dislocations, planar defects (twin boundaries, stacking faults and grain boundaries), and volume defects (precipitation and voids). Next, we discuss the advanced methods for characterizing defects in TE materials. Subsequently, we elaborate on the influences of defect engineering on the electrical and thermal transport properties as well as mechanical performance of TE materials. In the end, we discuss the outlook for the future development of defect engineering to further advance the TE field.

In Situ Mechanistic Studies of Two Divergent Synthesis Routes Forming the Heteroanionic BiOCuSe

Heteroanionic materials are a burgeoning class of compounds that offer new properties via the targeted selection of anions. However, understanding the design principles and achieving successful syntheses of new materials in this class are in their infancy. To obtain mechanistic insight and a panoramic view of the reaction progression from beginning to end of the formation of a heteroanionic material, we selected BiOCuSe, a well-known thermoelectric compound, and utilized in situ synchrotron powder diffraction as a function of temperature and time. BiOCuSe is a layered material, which crystallizes in a common mixed anion structure type: ZrSiAsFe. Two reactions of starting materials (Bi₂O₂Se + Cu₂Se and Bi₂O₃ + Bi + 3Cu + 3Se) were studied to determine the effect of precursors on the reaction pathway. Our in situ investigation shows that the ternary-binary Bi₂O₂Se + Cu₂Se reaction proceeds without intermediates to directly form BiOCuSe, while the binary-elemental Bi₂O₃ + Bi + 3Cu + 3Se reaction generates many intermediates before the final product forms. These intermediates include CuSe, Bi₃Se₄, Bi₂Se₃, and Cu₂Se. While the stoichiometric loading of the precursors necessarily dictates the identity of the first intermediates, kinetics also plays a contributing role in stabilizing unexpected intermediates such as CuSe and Bi₃Se₄. Understanding and establishing a link between the selection of precursors and the reaction pathways improves the potential for rational synthesis of heteroanionic materials and solid-state reactions in general.

An Update Review on N-Type Layered Oxyselenide Thermoelectric Materials

Compared with traditional thermoelectric materials, layered oxyselenide thermoelectric materials consist of nontoxic and lower-cost elements and have better chemical and thermal stability. Recently, several studies on n-type layered oxyselenide thermoelectric materials, including BiCuSeO, Bi₂O₂Se and Bi₆Cu₂Se₄O₆, were reported, which stimulates us to comprehensively summarize these researches. In this short review, we begin with various attempts to realize an n-type BiCuSeO system. Then, we summarize several methods to optimize the thermoelectric performance of Bi₂O₂Se, including carrier engineering, band engineering, microstructure design, et al. Next, we introduce a new type of layered oxyselenide Bi₆Cu₂Se₄O₆, and n-type transport properties can be obtained through halogen doping. At last, we propose some possible research directions for n-type layered oxyselenide thermoelectric materials.

Realizing N-type SnTe Thermoelectrics with Competitive Performance through Suppressing Sn Vacancies

Due to the intrinsically plentiful Sn vacancies, developing n-type SnTe thermoelectric materials is a big challenge. Herein, n-type SnTe thermoelectric materials with remarkable performance were successfully synthesized through suppressing Sn vacancies, followed by electron-doping. Pb alloying notably depressed the Sn vacancies via populating Sn vacancies in SnTe (supported by transmission electron microscopy), and the electrical transports were shifted from p-type to n-type through introducing electrons using I doping. In the n-type SnTe, we found that the electrical conductivity could be enhanced by increased carrier mobility through sharpening conduction bands after alloying Pb, while the lattice thermal conductivity could be reduced via strong phonon scattering after introducing defects by Pb alloying and I doping. Resulting from these enhancements, the n-type Sn_0.6Pb_0.4Te_0.98I_0.02 achieves a notably high ZT_max ∼ 0.8 at 573 K and a remarkable ZT_ave ∼ 0.51 at 300-823 K, which can match many excellent p-type SnTe. This work indicates that n-type SnTe could be experimentally acquired and is a promising candidate for thermoelectric generation, which will stimulate further research on n-type SnTe thermoelectric materials and even devices on the basis of both n- and p-type SnTe legs.

Oxidation-induced thermopower inversion in nanocrystalline SnSe thin film

Given the growing demand for environmentally friendly energy sources, thermoelectric energy conversion has attracted increased interest as a promising CO₂-free technology. SnSe single crystals have attracted attention as a next generation thermoelectric material due to outstanding thermoelectric properties arising from ultralow thermal conductivity. For practical applications, on the other hand, polycrystalline SnSe should be also focused because the production cost and the flexibility for applications are important factors, which requires the systematic investigation of the stability of thermoelectric performance under a pseudo operating environment. Here, we report that the physical properties of SnSe crystals with nano to submicron scale are drastically modified by atmospheric annealing. We measured the Seebeck effect while changing the annealing time and found that the large positive thermopower, + 757 μV K⁻¹, was completely suppressed by annealing for only a few minutes and was eventually inverted to be the large negative value, − 427 μV K⁻¹. This result would further accelerate intensive studies on SnSe nanostructures, especially focusing on the realistic device structures and sealing technologies for energy harvesting applications.

Phonon spectrum and thermoelectric properties of square/octagon structure of bismuth monolayer

First-principles calculation and Boltzmann transport theory have been combined to comparatively investigate the band structure, phonon spectrum, lattice thermal conductivity, electronic transport property, Seebeck coefficient, and figure of merit of square/octagon (s/o)-bismuth monolayer. Calculations reveal that the thermoelectric properties of s/o-bismuth monolayer are better than that of β-bismuth monolayer, which should be mainly due to the low lattice thermal conductivity and weakened coupling of electrons and phonons. It is also found that the phonon frequency and group velocity could play dominant roles in determining the magnitude of the lattice thermal conductivity of s/o-bismuth monolayer. Furthermore, the Seebeck coefficient and figure of merit of s/o-bismuth monolayer are higher than those of β-bismuth monolayer. The derived results are in good agreement with other theoretical results in the literature, and could provide a deep understanding of thermoelectric properties of the bismuth monolayer materials.

First-principles calculation and Boltzmann transport theory have been combined to comparatively investigate the electronic structure, phonon spectrum, and thermoelectric properties of square/octagon (s/o)-bismuth monolayer.

Thermoelectric properties of flexible PEDOT:PSS-based films tuned by SnSe via the vacuum filtration method

In this study, flexible thermoelectric tin selenide (SnSe)/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) composite films have been fabricated by the vacuum filtration method, and their thermoelectric properties were investigated. The electrical conductivities of the composite films have a tendency to decrease with an increase in the SnSe content, while their Seebeck coefficients have an inverse tendency. The electrical conductivities decrease gradually with an increase in temperature, while the Seebeck coefficients show a tendency to increase first and then decrease with the increase in temperature. The maximum power factor (PF = S 2 σ) of the composite film is obtained when the SnSe content is 10 wt%, which is 24.42 μW m-1 K-2 at 353 K. Besides, the 10 wt% SnSe/PEDOT:PSS film exhibited excellent stability with only a 9% increase in resistance after 1000 bends under a bending radius of 4 mm. When the temperature gradient is 50 K, a flexible thermoelectric generator fabricated by 3 legs of the 10 wt% SnSe/PEDOT:PSS film has an open-circuit voltage and maximum output electrical power of 3.2 mV and 13.73 nW, respectively, which demonstrates a great potential application to power wearable flexible electronic devices.

Robust Metallic Nanolaminates Having Phonon-Glass Thermal Conductivity

Heat transfer phenomena in multilayer structures have gained interest due to their promising use in thermal insulation and thermoelectricity applications. In such systems, nanostructuring has been used to introduce moderate interfacial density, and it has been demonstrated that interfacial thermal resistance plays a crucial role in reducing thermal conductivity κ. Nevertheless, the main constraint for actual applications is related to their tiny size because they are extremely thin to establish appreciable temperature gradients. In this work, by severe plastic deformation process of accumulative roll bonding (ARB), a 250 µm thick Cu-Nb multilayer containing more than 8000 interfaces with periods below 40 nm was obtained, enabling the production of bulk metallic nanolaminates with ultralow κ. Multilayers present an ultralow κ of ∼0.81 W/mK at 300 K, which is 100 times smaller than its Cu-Nb bulk counterpart, and even lower than the amorphous lattice limit for the Cu-Nb thin film system. By using electron diffusive mismatch model (EDMM), we argue that both electrons diffusively scattering at interface and those ballistically crossing the constituents are responsible for heat conduction in the Cu-Nb multilayers at nanoscale. Hence, ARB Cu-Nb multilayers are intriguing candidate materials which can prove avenues to achieve stable ultralow κ thermal barriers for robust applications.

Tin Selenide Molecular Precursor for the Solution Processing of Thermoelectric Materials and Devices

In the present work, we report a solution-based strategy to produce crystallographically textured SnSe bulk nanomaterials and printed layers with optimized thermoelectric performance in the direction normal to the substrate. Our strategy is based on the formulation of a molecular precursor that can be continuously decomposed to produce a SnSe powder or printed into predefined patterns. The precursor formulation and decomposition conditions are optimized to produce pure phase 2D SnSe nanoplates. The printed layer and the bulk material obtained after hot press displays a clear preferential orientation of the crystallographic domains, resulting in an ultralow thermal conductivity of 0.55 W m^-1 K^-1 in the direction normal to the substrate. Such textured nanomaterials present highly anisotropic properties with the best thermoelectric performance in plane, i.e., in the directions parallel to the substrate, which coincide with the crystallographic bc plane of SnSe. This is an unfortunate characteristic because thermoelectric devices are designed to create/harvest temperature gradients in the direction normal to the substrate. We further demonstrate that this limitation can be overcome with the introduction of small amounts of tellurium in the precursor. The presence of tellurium allows one to reduce the band gap and increase both the charge carrier concentration and the mobility, especially the cross plane, with a minimal decrease of the Seebeck coefficient. These effects translate into record out of plane ZT values at 800 K.

A Comprehensive Review of Strategies and Approaches for Enhancing the Performance of Thermoelectric Module

In recent years, thermoelectric (TE) technology has been emerging as a promising alternative and environmentally friendly technology for power generators or cooling devices due to the increasingly serious energy shortage and environmental pollution problems. However, although TE technology has been found for a long time and applied in many professional fields, its low energy conversion efficiency and high cost also hinder its wide application. Thus, it is still urgent to improve the thermoelectric modules. This work comprehensively reviews the status of strategies and approaches for enhancing the performance of thermoelectrics, including material development, structure and geometry improvement, the optimization of a thermal management system, and the thermal structure design. In particular, the influence of contact thermal resistance and the improved optimization methods are discussed. This work covers many fields related to the enhancement of thermoelectrics. It is found that the main challenge of TE technology remains the improvement of materials’ properties, the decrease in costs and commercialization. Therefore, a lot of research needs to be carried out to overcome this challenge and further improve the performance of TE modules. Finally, the future research direction of TE technology is discussed. These discussions provide some practical guidance for the improvement of thermoelectric performance and the promotion of thermoelectric applications.

Synthesis of Novel 1T/2H-MoS2 from MoO3 Nanowires with Enhanced Photocatalytic Performance

Metallic 1T-phase MoS₂ is a newly emerging and attractive catalyst since it has more available active sites and high carrier mobility in comparison with its widely used counterpart of semiconducting 2H-MoS₂. Herein, 1T/2H-MoS₂(N) (N: MoO₃ nanowires were used to prepare 1T/2H-MoS₂) was synthesized by using molybdenum trioxide (MoO₃) nanowires as the starting material and applied in the photodegradation of antibiotic residue in water. Enhanced photocatalytic performance was observed on the obtained 1T/2H-MoS₂(N), which was 2.8 and 1.3 times higher than those on 1T/2H-MoS₂(P) (P: commercial MoO₃ powder was used to prepare 1T/2H-MoS₂) and 2H-MoS₂, respectively. The active component responsible for the photodegradation was detected and a reaction mechanism is proposed.

Dynamic Epitaxial Crystallization of SnSe2 on the Oxidized SnSe Surface and Its Atomistic Mechanisms

Surface oxidation of SnSe sharply reduces its thermoelectric properties though the bulk single-crystalline materials of SnSe claim the record high zT values. Investigation on the oxidation behaviors of SnSe together with the subsequent phase transition and element migration is fundamentally important to maintaining the ultrahigh zT values, with a potential for further improvement. In this work, we disclose the dynamic epitaxial crystallization of SnSe2 on the amorphous surface of partially oxidized SnSe crystals and the corresponding atomistic mechanisms via transmission electron microscopy (TEM). It is revealed that the thermally annealed amorphous surface crystallized to SnO2 and SnSe2 in the outermost and secondary layers, respectively, forming distinctive SnSe/SnSe2/SnO2 multilayer heterostructures with specific orientation relationships between the two selenides. By means of in situ scanning TEM (STEM), the dynamic epitaxial crystallization process of SnSe2 was revealed when the oxidized SnSe surface was subjected to electron beam irradiation. Through the atomic-scale characterization and modeling analysis, we find that the exposed dangling Se diatoms on the SnSe surface serve as nucleation sites for lateral epitaxial crystallization of SnSe2. The same valence and similar coordination configuration of Se atoms in these two phases are supposed to facilitate the sharing of Se atoms, with lattice distortions in the SnSe2/SnSe interface. These findings are valuable for understanding the surface oxidation behavior of SnSe and revealing the interface structures of SnSe2/SnSe heterojunctions and also offering new routes for SnSe-related multilayer or heterostructure system design.

Ultra-low lattice thermal conductivity and giant phonon-electric field coupling in hafnium dichalcogenide monolayers

Phonons in crystalline solids are of utmost importance in governing its lattice thermal conductivity (k L). In this work, k L in hafnium (Hf) dichalcogenide monolayers has been investigated based on ab initio DFT coupled to linearized Boltzmann transport equation together with single-mode relaxation-time approximation. Ultra-low k L found in HfS2 (2.19 W m-1 K-1), HfSe2 (1.23 W m-1 K-1) and HfSSe (1.78 W m-1 K-1) monolayers at 300 K, is comparable to that of the state-of-art bulk thermoelectric materials, such as, Bi2Te3 (1.6 W m-1 K-1), PbTe (2.2 W m-1 K-1) and SnSe (2.6 W m-1 K-1). Gigantic longitudinal-transverse optical (LO-TO) splitting of up to 147.7 cm-1 is noticed at the Brillouin zone-centre (Γ-point), which is much higher than that in MoS2 single layer (∼2 cm-1). It is driven by the colossal phonon-electric field coupling arising from the domination of ionic character in the interatomic bonds and Born effective or dynamical charges as high as 7.4e on the Hf ions, which is seven times that on Mo in MoS2 single layer. Enhancement in k L occurs in HfS2 (2.19 to 4.1 W m-1 K-1), HfSe2 (1.23 to 1.7 W m-1 K-1) and HfSSe (1.78 to 2.2 W m-1 K-1) upon the incorporation of the non-analytic correction term. Furthermore, the mode Grüneisen parameter is calculated to be as high as ∼2.0, at room temperature, indicating a strong anharmonicity. Moreover, the contribution of optical phonons to k L is found to be ∼12%, which is significantly high than that in single-layer MoS2. Large atomic mass of Hf (178.5 u), small phonon group velocities (4-5 km s-1), low Debye temperature (∼166 K), low bond and elastic stiffness (Young's modulus ∼75 N m-1), small phonon lifetimes (∼6 ps), low specific heat capacity (∼17 J K-1 mol-1) and strong anharmonicity are collectively found to be the factors responsible for such a low k L. These findings would be immensely helpful in designing thermoelectric interconnects at the nanoscale and 2D material-based energy harvesters.

Practical High-Performance (Bi,Sb)2Te3-Based Thermoelectric Nanocomposites Fabricated by Nanoparticle Mixing and Scrap Recycling

Bi₂Te₃-based compounds are the most mature and widely used thermoelectric materials. However, industrial device fabrication will inevitably produce a lot of Bi₂Te₃ scraps, which results in wastes of expensive material resources. In this work, we recycled p-type (Bi,Sb)₂Te₃ scraps and reprocessed them by making nanocomposites with nano-SiC. The thermoelectric performance was enhanced, and a high ZT value of 1.07 was achieved, which is a significant improvement compared with commercial p-type (Bi,Sb)₂Te₃ ingots. Also, the hardness showed a notable increase, which is beneficial for device fabrication. In addition, we adjusted the proportion of Bi/Te of the commercial p-type (Bi,Sb)₂Te₃ scraps, thereby improving the thermoelectric performance and obtaining a higher ZT value of 1.2.

High-Performance Thermoelectric SnSe: Aqueous Synthesis, Innovations, and Challenges

Tin selenide (SnSe) is one of the most promising candidates to realize environmentally friendly, cost-effective, and high-performance thermoelectrics, derived from its outstanding electrical transport properties by appropriate bandgaps and intrinsic low lattice thermal conductivity from its anharmonic layered structure. Advanced aqueous synthesis possesses various unique advantages including convenient morphology control, exceptional high doping solubility, and distinctive vacancy engineering. Considering that there is an urgent demand for a comprehensive survey on the aqueous synthesis technique applied to thermoelectric SnSe, herein, a thorough overview of aqueous synthesis, characterization, and thermoelectric performance in SnSe is provided. New insights into the aqueous synthesis-based strategies for improving the performance are provided, including vacancy synergy, crystallization design, solubility breakthrough, and local lattice imperfection engineering, and an attempt to build the inherent links between the aqueous synthesis-induced structural characteristics and the excellent thermoelectric performance is presented. Furthermore, the significant advantages and potentials of an aqueous synthesis route for fabricating SnSe-based 2D thermoelectric generators, including nanorods, nanobelts, and nanosheets, are also discussed. Finally, the controversy, strategy, and outlook toward future enhancement of SnSe-based thermoelectric materials are also provided. This Review guides the design of thermoelectric SnSe with high performance and provides new perspectives as a reference for other thermoelectric systems.

Enhancing the Thermoelectric Performance of Polycrystalline SnSe by Decoupling Electrical and Thermal Transport through Carbon Fiber Incorporation

Thermoelectric (TE) materials have attracted extensive interest because of their ability to achieve direct heat-to-electricity conversion. They provide an appealing renewable energy source in a variety of applications by harvesting waste heat. The record-breaking figure of merit reported for single crystal SnSe has stimulated related research on its polycrystalline counterpart. Boosting the TE conversion efficiency requires increases in the power factor and decreases in thermal conductivity. It is still a big challenge, however, to optimize these parameters independently because of their complex interrelationships. Herein, we propose an innovative approach to decouple electrical and thermal transport by incorporating carbon fiber (CF) into polycrystalline SnSe. We show that the incorporation of highly conductive CF can successfully enhance the electrical conductivity, while greatly reducing the thermal conductivity of polycrystalline SnSe. As a result, a high TE figure-of-merit (zT) of 1.3 at 823 K is obtained in p-type SnSe/CF composite polycrystalline materials. Furthermore, SnSe samples incorporated with CFs exhibit superior mechanical properties, which are favorable for device fabrication applications. Our results indicate that the dispersion of CF can be a good way to greatly improve both TE and mechanical performance.

Ultrahigh Average ZT Realized in p-Type SnSe Crystalline Thermoelectrics through Producing Extrinsic Vacancies

Crystalline SnSe has been revealed as an efficient thermoelectric candidate with outstanding performance. Herein, record-high thermoelectric performance is achieved among SnSe crystals via simply introducing a small amount of SnSe₂ as a kind of extrinsic defect dopant. This excellent performance mainly arises from the largely enhanced power factor by increasing the carrier concentration high as 6.55 × 10¹⁹ cm^-3, which was surprisingly promoted by introducing extrinsic SnSe₂ even though pristine SnSe₂ is an n-type conductor. The optimized carrier concentration promotes a deeper Fermi level and activates more valence bands, leading to an extraordinary room-temperature power factor ∼54 μW cm^-1 K^-2 through enlarging the band effective mass and Seebeck coefficient. As a result, on the basis of simultaneously depressed thermal conductivity induced from both Sn vacancies and SnSe₂ microdomains, maximum ZT values ∼0.9-2.2 and excellent average ZT > 1.7 among the working temperature range are achieved in Na doped SnSe crystals with 2% extrinsic SnSe₂. Our investigation illustrates new approaches on improving thermoelectric performance through introducing defect dopants, which might be well-implemented in other thermoelectric systems.

Influence of Ch substitution on structural, electronic, and thermoelectric properties of layered oxychalcogenides (La0.5Bi0.5O)CuCh (Ch = S, Se, Te): a new insight from first principles

Substituting Ch from S to Se to Te enhances local-symmetry distortion and thermoelectricity of (La_0.5Bi_0.5O)CuCh from first principles.

Boosting Thermoelectric Performance of SnSe via Tailoring Band Structure, Suppressing Bipolar Thermal Conductivity, and Introducing Large Mass Fluctuation

Here, we report a peak ZT of 1.85 at 873 K for sulfur and Pb codoped polycrystalline SnSe by boosting electrical transport properties while suppressing the lattice thermal conductivity. Compared with single sulfur doped samples, the carrier concentration is improved 1 order of magnitude by Pb incorporation, thereby contributing to improved electrical conductivity and power factor. Moreover, the introduction of sulfur and Pb suppresses the bipolar thermal conductivity by enlarging the band gap. The lattice thermal conductivity significantly decreased as low as 0.13 W m^-1 K^-1 at 873 K due to the synergic approach involving suppressing bipolar thermal conductivity, large mass fluctuation induced by sulfur incorporation, and nanoprecipitates. We demonstrate that the combination of tailoring band structure, suppressing bipolar thermal conductivity, and introducing large mass fluctuation contributes to the high thermoelectric performance in SnSe. The high performance was achieved through boosting electrical transport properties while maintaining ultralow thermal conductivity. Our findings offer a new strategy for achieving high performance thermoelectric materials.