1
|
Huang J, Dai S, Xu C, Du Y, Xu Z, Han K, Xu L, Wu W, Chen P, Huang Z. Capping-layer-mediated lattice mismatch and redox reaction in SrTiO 3-based bilayers. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35. [PMID: 37059113 DOI: 10.1088/1361-648x/accd37] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/11/2023] [Accepted: 04/14/2023] [Indexed: 05/16/2023]
Abstract
It is well known that the traditional two-dimensional electron system (2DES) hosted by the SrTiO3substrate can exhibit diverse electronic states by modifying the capping layer in heterostructures. However, such capping layer engineering is less studied in the SrTiO3-layer-carried 2DES (or bilayer 2DES), which is different from the traditional one on transport properties but more applicable to the thin-film devices. Here, several SrTiO3bilayers are fabricated by growing various crystalline and amorphous oxide capping layers on the epitaxial SrTiO3layers. For the crystalline bilayer 2DES, the monotonical reduction on the interfacial conductance, as well as carrier mobility, is recorded on increasing the lattice mismatch between the capping layers and epitaxial SrTiO3layer. The mobility edge raised by the interfacial disorders is highlighted in the crystalline bilayer 2DES. On the other hand, when increasing the concentration of Al with high oxygen affinity in the capping layer, the amorphous bilayer 2DES becomes more conductive accompanied by the enhanced carrier mobility but almost constant carrier density. This observation cannot be explained by the simple redox-reaction model, and the interfacial charge screening and band bending need to be considered. Moreover, when the capping oxide layers have the same chemical composition but with different forms, the crystalline 2DES with a large lattice mismatch is more insulating than its amorphous counterpart, and vice versa. Our results shed some light on understanding the different dominant role in forming the bilayer 2DES using crystalline and amorphous oxide capping layer, which may be applicable in designing other functional oxide interfaces.
Collapse
Affiliation(s)
- Jingwen Huang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
| | - Song Dai
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
| | - Chengcheng Xu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
| | - Yongyi Du
- Stony Brook Institute at Anhui University, Anhui University, Hefei 230039, People's Republic of China
| | - Zhipeng Xu
- Stony Brook Institute at Anhui University, Anhui University, Hefei 230039, People's Republic of China
| | - Kun Han
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
| | - Liqiang Xu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
| | - Wenbin Wu
- Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - Pingfan Chen
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
| | - Zhen Huang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
- Stony Brook Institute at Anhui University, Anhui University, Hefei 230039, People's Republic of China
| |
Collapse
|
2
|
Li M, Wang R, Liu T, Chen Q, Li N, Zhou L, Yu K, Liu H, Gong X, He R, Ahmad F, Yang F, Zhu W, Chen T. Integrating Surface Functional Modification and Energy-Level Adapted Coupling of Photocatalyst with Ultrafast Carrier Separation for Uranium Extraction. Sep Purif Technol 2023. [DOI: 10.1016/j.seppur.2023.123121] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/06/2023]
|
3
|
Chen X, Zhang T, Yu Y, Cai X, Gao T, Zhang T, Sun H, Gu C, Gu Z, Zhu Y, Zhou J, Nie Y, Pan X. Rewritable High-Mobility Electrons in Oxide Heterostructure of Layered Perovskite/Perovskite. ACS APPLIED MATERIALS & INTERFACES 2021; 13:7812-7821. [PMID: 33529011 DOI: 10.1021/acsami.1c00481] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Perovskite oxide SrTiO3 can be electron-doped and exhibits high mobility by introducing oxygen vacancies or dopants such as Nb or La. A reversible after-growth tuning of high mobility carriers in SrTiO3 is highly desired for the applications in high-speed electronic devices. Here, we report the observation of tunable high-mobility electrons in layered perovskite/perovskite (Srn+1TinO3n+1/SrTiO3) heterostructure. By use of Srn+1TinO3n+1 as the oxygen diffusion barrier, the oxygen vacancy concentration near the interface can be reversibly engineered by high-temperature annealing or infrared laser heating. Because of the identical elemental compositions (Sr, Ti, and O) throughout the whole heterostructure, interfacial ionic intermixing is absent, giving rise to an extremely high mobility (exceeding 55000 cm2 V-1 s-1 at 2 K) in this type of oxide heterostructure. This layered perovskite/perovskite heterostructure provides a promising platform for reconfigurable high-speed electronic devices.
Collapse
Affiliation(s)
- Xiaofeng Chen
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Tingting Zhang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Yang Yu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Xiangbin Cai
- Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China
| | - Tianyi Gao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Tianwei Zhang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Haoying Sun
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Chenyi Gu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Zhengbin Gu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Ye Zhu
- Department of Applied Physics, Research Institute for Smart Energy, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Jian Zhou
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Yuefeng Nie
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Xiaoqing Pan
- Department of Materials Science and Engineering, Department of Physics and Astronomy, University of California, Irvine, Irvine, California 92697, United States
| |
Collapse
|
4
|
Leng K, Wang L, Shao Y, Abdelwahab I, Grinblat G, Verzhbitskiy I, Li R, Cai Y, Chi X, Fu W, Song P, Rusydi A, Eda G, Maier SA, Loh KP. Electron tunneling at the molecularly thin 2D perovskite and graphene van der Waals interface. Nat Commun 2020; 11:5483. [PMID: 33127900 PMCID: PMC7599242 DOI: 10.1038/s41467-020-19331-6] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/24/2020] [Accepted: 10/07/2020] [Indexed: 11/17/2022] Open
Abstract
Quasi-two-dimensional perovskites have emerged as a new material platform for optoelectronics on account of its intrinsic stability. A major bottleneck to device performance is the high charge injection barrier caused by organic molecular layers on its basal plane, thus the best performing device currently relies on edge contact. Herein, by leveraging on van der Waals coupling and energy level matching between two-dimensional Ruddlesden-Popper perovskite and graphene, we show that the plane-contacted perovskite and graphene interface presents a lower barrier than gold for charge injection. Electron tunneling across the interface occurs via a gate-tunable, direct tunneling-to-field emission mechanism with increasing bias, and photoinduced charge transfer occurs at femtosecond timescale (~50 fs). Field effect transistors fabricated on molecularly thin Ruddlesden-Popper perovskite using graphene contact exhibit electron mobilities ranging from 0.1 to 0.018 cm2V−1s−1 between 1.7 to 200 K. Scanning tunneling spectroscopy studies reveal layer-dependent tunneling barrier and domain size on few-layered Ruddlesden-Popper perovskite. Insulating molecular layers on the basal plane of 2D perovskite is a major bottleneck for charge injection that limiting device performance. Here, the authors show that plane-contacted graphene functions as a low barrier and gate-tunable contact to overcome this limitation.
Collapse
Affiliation(s)
- Kai Leng
- Department of Chemistry, National University of Singapore, Singapore, Singapore.,Center for Advanced 2D Materials and Graphene Research Centre, Singapore, Singapore
| | - Lin Wang
- Department of Chemistry, National University of Singapore, Singapore, Singapore.,Center for Advanced 2D Materials and Graphene Research Centre, Singapore, Singapore
| | - Yan Shao
- Department of Chemistry, National University of Singapore, Singapore, Singapore
| | - Ibrahim Abdelwahab
- Department of Chemistry, National University of Singapore, Singapore, Singapore.,Center for Advanced 2D Materials and Graphene Research Centre, Singapore, Singapore.,Department of Physics, Imperial College London, London, SW7 2AZ, UK
| | - Gustavo Grinblat
- Nanoinstitute Munich, Faculty of Physics, Ludwig-Maximilians-Universität München, 80539, München, Germany
| | - Ivan Verzhbitskiy
- Center for Advanced 2D Materials and Graphene Research Centre, Singapore, Singapore.,Department of Physics, National University of Singapore, Singapore, Singapore
| | - Runlai Li
- Department of Chemistry, National University of Singapore, Singapore, Singapore
| | - Yongqing Cai
- Institute of Applied Physics and Materials Engineering, University of Macau, Macau, China
| | - Xiao Chi
- Department of Chemistry, National University of Singapore, Singapore, Singapore.,Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, 117603, Singapore, Singapore
| | - Wei Fu
- Department of Chemistry, National University of Singapore, Singapore, Singapore.,Center for Advanced 2D Materials and Graphene Research Centre, Singapore, Singapore
| | - Peng Song
- Department of Chemistry, National University of Singapore, Singapore, Singapore.,Center for Advanced 2D Materials and Graphene Research Centre, Singapore, Singapore
| | - Andrivo Rusydi
- Department of Physics, National University of Singapore, Singapore, Singapore.,Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, 117603, Singapore, Singapore
| | - Goki Eda
- Department of Chemistry, National University of Singapore, Singapore, Singapore.,Center for Advanced 2D Materials and Graphene Research Centre, Singapore, Singapore.,Department of Physics, National University of Singapore, Singapore, Singapore
| | - Stefan A Maier
- Department of Physics, Imperial College London, London, SW7 2AZ, UK.,Nanoinstitute Munich, Faculty of Physics, Ludwig-Maximilians-Universität München, 80539, München, Germany
| | - Kian Ping Loh
- Department of Chemistry, National University of Singapore, Singapore, Singapore. .,Center for Advanced 2D Materials and Graphene Research Centre, Singapore, Singapore.
| |
Collapse
|
5
|
Chi X, Wang H, Guo R, Whitcher TJ, Yu X, Yang P, Yan X, Breese MBH, Loh KP, Chen J, Rusydi A. Unusual Hole and Electron Midgap States and Orbital Reconstructions Induced Huge Ferroelectric Tunneling Electroresistance in BaTiO 3/SrTiO 3. NANO LETTERS 2020; 20:1101-1109. [PMID: 31944125 DOI: 10.1021/acs.nanolett.9b04390] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Oxide heterostructures have attracted a lot of interest because of their rich exotic phenomena and potential applications. Recently, a greatly enhanced tunneling electroresistance (TER) of ferroelectric tunnel junctions (FTJs) has been realized in such heterostructures. However, our understanding on the electronic structure of resistance response with polarization reversal and the origin of huge TER is still lacking. Here, we report on electronic structures, particularly at the interface and surface, and the control of the spontaneous polarization of BaTiO3 films by changing the termination of a SrTiO3 substrate. Interestingly, unusual electron and hole midgap states are concurrently formed and accompanied by orbital reconstructions, which determine the ferroelectric polarization orientation in the BaTiO3/SrTiO3. Such unusual midgap states, which yield a strong electronic screening effect, reduce the ferroelectric barrier width and height, and pin the ferroelectric polarization, lead to a dramatic enhancement of the TER effect. The midgap states are also observed in BaTiO3 films on electron-doped Nb/SrTiO3 revealing its universality. Our result provides new insight into the origin of the huge TER effect and opens a new route for designing ferroelectric tunnel junction-based devices with huge TER through interface engineering.
Collapse
Affiliation(s)
- Xiao Chi
- Singapore Synchrotron Light Source , National University of Singapore , 5 Research Link, 117603 , Singapore
- Department of Chemistry , National University of Singapore , 3 Science Drive 3, 117543 , Singapore
- Center for Advanced 2D Materials and Graphene Research Centre , 2 Science Drive 2, 117526 , Singapore
| | - Han Wang
- Department of Materials Science and Engineering , National University of Singapore , 117575 , Singapore
| | - Rui Guo
- Department of Materials Science and Engineering , National University of Singapore , 117575 , Singapore
| | - Thomas J Whitcher
- Singapore Synchrotron Light Source , National University of Singapore , 5 Research Link, 117603 , Singapore
- Center for Advanced 2D Materials and Graphene Research Centre , 2 Science Drive 2, 117526 , Singapore
| | - Xiaojiang Yu
- Singapore Synchrotron Light Source , National University of Singapore , 5 Research Link, 117603 , Singapore
| | - Ping Yang
- Singapore Synchrotron Light Source , National University of Singapore , 5 Research Link, 117603 , Singapore
| | - Xiaobing Yan
- Department of Materials Science and Engineering , National University of Singapore , 117575 , Singapore
| | - Mark B H Breese
- Singapore Synchrotron Light Source , National University of Singapore , 5 Research Link, 117603 , Singapore
- Department of Physics , National University of Singapore , 2 Science Drive 3, 117542 , Singapore
| | - Kian Ping Loh
- Department of Chemistry , National University of Singapore , 3 Science Drive 3, 117543 , Singapore
- Center for Advanced 2D Materials and Graphene Research Centre , 2 Science Drive 2, 117526 , Singapore
- Solar Energy Research Institute of Singapore (SERIS) , 7 Engineering Drive 1, 117574 , Singapore
| | - Jingsheng Chen
- Department of Chemistry , National University of Singapore , 3 Science Drive 3, 117543 , Singapore
| | - Andrivo Rusydi
- Singapore Synchrotron Light Source , National University of Singapore , 5 Research Link, 117603 , Singapore
- Department of Physics , National University of Singapore , 2 Science Drive 3, 117542 , Singapore
- Center for Advanced 2D Materials and Graphene Research Centre , 2 Science Drive 2, 117526 , Singapore
- Solar Energy Research Institute of Singapore (SERIS) , 7 Engineering Drive 1, 117574 , Singapore
- NUSSNI-NanoCore , National University of Singapore , 117576 , Singapore
- Graduate School for Integrative Sciences and Engineering (NGS) , National University of Singapore , 28 Medical Drive, 117456 , Singapore
| |
Collapse
|
6
|
Han K, Hu K, Li X, Huang K, Huang Z, Zeng S, Qi D, Ye C, Yang J, Xu H, Ariando A, Yi J, Lü W, Yan S, Wang XR. Erasable and recreatable two-dimensional electron gas at the heterointerface of SrTiO 3 and a water-dissolvable overlayer. SCIENCE ADVANCES 2019; 5:eaaw7286. [PMID: 31453328 PMCID: PMC6697431 DOI: 10.1126/sciadv.aaw7286] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/19/2019] [Accepted: 07/11/2019] [Indexed: 06/10/2023]
Abstract
While benefiting greatly from electronics, our society also faces a major problem of electronic waste, which has already caused environmental pollution and adverse human health effects. Therefore, recyclability becomes a must-have feature in future electronics. Here, we demonstrate an erasable and recreatable two-dimensional electron gas (2DEG), which can be easily created and patterned by depositing a water-dissolvable overlayer of amorphous Sr3Al2O6 (a-SAO) on SrTiO3 (STO) at room temperature. The 2DEG can be repeatedly erased or recreated by depositing the a-SAO or dissolving in water, respectively. Photoluminescence results show that the 2DEG arises from the a-SAO-induced oxygen vacancy. Furthermore, by gradually depleting the 2DEG, a transition of nonlinear to linear Hall effect is observed, demonstrating an unexpected interfacial band structure. The convenience and repeatability in the creation of the water-dissolvable 2DEG with rich physics could potentially contribute to the exploration of next generation electronics, such as environment-friendly or water-soluble electronics.
Collapse
Affiliation(s)
- Kun Han
- School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 Singapore, Singapore
| | - Kaige Hu
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China
- Department of Physics, University of Texas at Austin, Austin, TX 78712, USA
| | - Xiao Li
- Department of Physics, University of Texas at Austin, Austin, TX 78712, USA
- Center for Quantum Transport and Thermal Energy Science, School of Physics and Technology, Nanjing Normal University, Nanjing 210023, China
| | - Ke Huang
- School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 Singapore, Singapore
| | - Zhen Huang
- Department of Physics and NUSNNI-Nanocore, National University of Singapore, 117411 Singapore, Singapore
| | - Shengwei Zeng
- Department of Physics and NUSNNI-Nanocore, National University of Singapore, 117411 Singapore, Singapore
| | - Dongchen Qi
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies, School of Chemistry, Physics, and Mechanical Engineering, Queensland University of Technology, Brisbane, Queensland 4001, Australia
- Department of Chemistry and Physics, La Trobe Institute for Molecular Science, La Trobe University, Melbourne, Victoria 3086, Australia
| | - Chen Ye
- School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 Singapore, Singapore
| | - Jian Yang
- School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 Singapore, Singapore
| | - Huan Xu
- School of Electrical and Electronic Engineering, Nanyang Technological University, 639798 Singapore, Singapore
| | - Ariando Ariando
- Department of Physics and NUSNNI-Nanocore, National University of Singapore, 117411 Singapore, Singapore
| | - Jiabao Yi
- Global Innovative Centre for Advanced Nanomaterials, School of Engineering, The University of Newcastle, Callaghan New South Wales 2308 Australia
| | - Weiming Lü
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan 250022, China
| | - Shishen Yan
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan 250022, China
| | - X. Renshaw Wang
- School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 Singapore, Singapore
- School of Electrical and Electronic Engineering, Nanyang Technological University, 639798 Singapore, Singapore
| |
Collapse
|
7
|
Huang Z, Renshaw Wang X, Rusydi A, Chen J, Yang H, Venkatesan T. Interface Engineering and Emergent Phenomena in Oxide Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1802439. [PMID: 30133012 DOI: 10.1002/adma.201802439] [Citation(s) in RCA: 43] [Impact Index Per Article: 7.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/16/2018] [Revised: 07/06/2018] [Indexed: 06/08/2023]
Abstract
Complex oxide interfaces have mesmerized the scientific community in the last decade due to the possibility of creating tunable novel multifunctionalities, which are possible owing to the strong interaction among charge, spin, orbital, and structural degrees of freedom. Artificial interfacial modifications, which include defects, formal polarization, structural symmetry breaking, and interlayer interaction, have led to novel properties in various complex oxide heterostructures. These emergent phenomena not only serve as a platform for investigating strong electronic correlations in low-dimensional systems but also provide potentials for exploring next-generation electronic devices with high functionality. Herein, some recently developed strategies in engineering functional oxide interfaces and their emergent properties are reviewed.
Collapse
Affiliation(s)
- Zhen Huang
- NUSNNI-NanoCore, National University of Singapore, 5A Engineering Drive 1, Singapore, 117411, Singapore
| | - Xiao Renshaw Wang
- NUSNNI-NanoCore, National University of Singapore, 5A Engineering Drive 1, Singapore, 117411, Singapore
| | - Andrivo Rusydi
- NUSNNI-NanoCore, National University of Singapore, 5A Engineering Drive 1, Singapore, 117411, Singapore
| | - Jingsheng Chen
- NUSNNI-NanoCore, National University of Singapore, 5A Engineering Drive 1, Singapore, 117411, Singapore
| | - Hyunsoo Yang
- NUSNNI-NanoCore, National University of Singapore, 5A Engineering Drive 1, Singapore, 117411, Singapore
| | - Thirumalai Venkatesan
- NUSNNI-NanoCore, National University of Singapore, 5A Engineering Drive 1, Singapore, 117411, Singapore
| |
Collapse
|