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Han Y, Chae M, Choi D, Song I, Ko C, Cresti A, Theodorou C, Joo MK. Negative Differential Interlayer Resistance in WSe 2 Multilayers via Conducting Channel Migration with Vertical Double-Side Contacts. ACS APPLIED MATERIALS & INTERFACES 2023; 15:58605-58612. [PMID: 38051158 DOI: 10.1021/acsami.3c13699] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
The inherent interlayer resistance in two-dimensional (2D) van der Waals (vdW) multilayers is expected to significantly influence the carrier density profile along the thickness, provoking spatial modification and separation of the conducting channel inside the multilayers, in conjunction with the thickness-dependent carrier mobility. However, the effect of the interlayer resistance on the variation in the carrier density profile and its direction along the thickness under different electrostatic bias conditions has been elusive. Here, we reveal the presence of a negative differential interlayer resistance (NDIR) in WSe2 multilayers by considering various contact electrode configurations: (i) bottom contact, (ii) top contact, and (iii) vertical double-side contact (VDC). The contact-structure-dependent shape modification of the transconductance clearly manifests the redistribution of carrier density and indicates the direction of the conducting channel migration along the thickness. Furthermore, the distinct characteristic of the electrically tunable NDIR in 2D WSe2 multilayers is revealed by the observed discrepancy between the top- and bottom-channel resistances determined by four-probe measurements with VDC. Our results provide an optimized device layout and further insights into the distinct carrier transport mechanism in 2D vdW multilayers.
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Affiliation(s)
- Yeongseo Han
- Department of Applied Physics, Sookmyung Women's University, Seoul 04310, Republic of Korea
| | - Minji Chae
- Department of Applied Physics, Sookmyung Women's University, Seoul 04310, Republic of Korea
| | - Dahyun Choi
- Department of Applied Physics, Sookmyung Women's University, Seoul 04310, Republic of Korea
| | - Inseon Song
- Department of Applied Physics, Sookmyung Women's University, Seoul 04310, Republic of Korea
| | - Changhyun Ko
- Department of Applied Physics, Sookmyung Women's University, Seoul 04310, Republic of Korea
- Institute of Advanced Materials and Systems, Sookmyung Women's University, Seoul 04310, Republic of Korea
| | - Alessandro Cresti
- Univ. Grenoble Alpes, Univ. Savoie Mont Blanc, CNRS, Grenoble INP, IMEP-LAHC, Grenoble 38000, France
| | - Christoforos Theodorou
- Univ. Grenoble Alpes, Univ. Savoie Mont Blanc, CNRS, Grenoble INP, IMEP-LAHC, Grenoble 38000, France
| | - Min-Kyu Joo
- Department of Applied Physics, Sookmyung Women's University, Seoul 04310, Republic of Korea
- Institute of Advanced Materials and Systems, Sookmyung Women's University, Seoul 04310, Republic of Korea
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2
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Chae M, Han Y, Park YH, Choi D, Choi Y, Kim S, Song I, Ko C, Joo MK. Enhanced Interlayer Charge Injection Efficiency in 2D Multilayer ReS 2 via Vertical Double-Side Contacts. ACS APPLIED MATERIALS & INTERFACES 2023; 15:23439-23446. [PMID: 37133360 DOI: 10.1021/acsami.3c02226] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/04/2023]
Abstract
Two-dimensional (2D) van der Waals (vdW) layered materials have provided novel opportunities to explore interesting physical properties such as thickness-dependent bandgap, moiré excitons, superconductivity, and superfluidity. However, the presence of interlayer resistance along the thickness and Schottky barrier in metal-to-2D vdW semiconducting materials causes a limited interlayer charge injection efficiency, perturbing various intrinsic properties of 2D vdW multilayers. Herein, we report a simple but powerful contact electrode design to enhance interlayer carrier injection efficiency along the thickness by constructing vertical double-side contact (VDC) electrodes. A 2-fold extended contact area of VDC not only strongly limits an interlayer resistance contribution to the field-effect mobility and current density at the metal-to-2D semiconductor interface but also significantly suppresses both current transfer length (≤1 μm) and specific contact resistivity (≤1 mΩ·cm2), manifesting clear benefits of VDC in comparison with those in conventional top-contact and bottom-contact configurations. Our layout for contact electrode configuration may suggest an advanced electronic device platform for high-performing 2D optoelectronic devices.
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Affiliation(s)
- Minji Chae
- Department of Applied Physics, Sookmyung Women's University, Seoul 04310, Republic of Korea
| | - Yeongseo Han
- Department of Applied Physics, Sookmyung Women's University, Seoul 04310, Republic of Korea
| | - Yoon Hee Park
- Samsung Electronics, Pyeongtaek 17786, Republic of Korea
| | - Dahyun Choi
- Department of Applied Physics, Sookmyung Women's University, Seoul 04310, Republic of Korea
| | - Yoojin Choi
- Department of Applied Physics, Sookmyung Women's University, Seoul 04310, Republic of Korea
| | | | - Inseon Song
- Department of Applied Physics, Sookmyung Women's University, Seoul 04310, Republic of Korea
| | - Changhyun Ko
- Department of Applied Physics, Sookmyung Women's University, Seoul 04310, Republic of Korea
- Institute of Advanced Materials and Systems, Sookmyung Women's University, Seoul 04310, Republic of Korea
| | - Min-Kyu Joo
- Department of Applied Physics, Sookmyung Women's University, Seoul 04310, Republic of Korea
- Institute of Advanced Materials and Systems, Sookmyung Women's University, Seoul 04310, Republic of Korea
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3
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Xi Y, Wang F, Feng H, Xiong Y, Huang Q. Cauliflower-like Mn 0.2Cd 0.8S decorated with ReS 2 nanosheets for boosting photocatalytic H 2 evolution activity. NEW J CHEM 2021. [DOI: 10.1039/d1nj02935e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/27/2022]
Abstract
A novel ReS2/Mn0.2Cd0.8S composite was fabricated and exhibited enhanced H2 evolution activity due to the modification of cauliflower-like Mn0.2Cd0.8S with ReS2 nanosheets.
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Affiliation(s)
- Yue Xi
- College of Chemistry and Pharmaceutical Engineering, Nanyang Normal University, Nanyang 473061, P. R. China
- College of Chemistry, Zhengzhou University, Zhengzhou 450001, P. R. China
| | - Fei Wang
- College of Chemistry and Pharmaceutical Engineering, Nanyang Normal University, Nanyang 473061, P. R. China
| | - Haoqiang Feng
- College of Chemistry and Pharmaceutical Engineering, Nanyang Normal University, Nanyang 473061, P. R. China
- College of Chemistry, Zhengzhou University, Zhengzhou 450001, P. R. China
| | - Yan Xiong
- College of Chemistry and Pharmaceutical Engineering, Nanyang Normal University, Nanyang 473061, P. R. China
| | - Qunzeng Huang
- College of Chemistry and Pharmaceutical Engineering, Nanyang Normal University, Nanyang 473061, P. R. China
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Choi BK, Ulstrup S, Gunasekera SM, Kim J, Lim SY, Moreschini L, Oh JS, Chun SH, Jozwiak C, Bostwick A, Rotenberg E, Cheong H, Lyo IW, Mucha-Kruczynski M, Chang YJ. Visualizing Orbital Content of Electronic Bands in Anisotropic 2D Semiconducting ReSe 2. ACS NANO 2020; 14:7880-7891. [PMID: 32463224 DOI: 10.1021/acsnano.0c01054] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Many properties of layered materials change as they are thinned from their bulk forms down to single layers, with examples including indirect-to-direct band gap transition in 2H semiconducting transition metal dichalcogenides as well as thickness-dependent changes in the valence band structure in post-transition-metal monochalcogenides and black phosphorus. Here, we use angle-resolved photoemission spectroscopy to study the electronic band structure of monolayer ReSe2, a semiconductor with a distorted 1T structure and in-plane anisotropy. By changing the polarization of incoming photons, we demonstrate that for ReSe2, in contrast to the 2H materials, the out-of-plane transition metal dz2 and chalcogen pz orbitals do not contribute significantly to the top of the valence band, which explains the reported weak changes in the electronic structure of this compound as a function of layer number. We estimate a band gap of 1.7 eV in pristine ReSe2 using scanning tunneling spectroscopy and explore the implications on the gap following surface doping with potassium. A lower bound of 1.4 eV is estimated for the gap in the fully doped case, suggesting that doping-dependent many-body effects significantly affect the electronic properties of ReSe2. Our results, supported by density functional theory calculations, provide insight into the mechanisms behind polarization-dependent optical properties of rhenium dichalcogenides and highlight their place among two-dimensional crystals.
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Affiliation(s)
- Byoung Ki Choi
- Department of Physics, University of Seoul, Seoul 02504, Republic of Korea
| | - Søren Ulstrup
- Department of Physics and Astronomy, Aarhus University, 8000 Aarhus C, Denmark
- Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Surani M Gunasekera
- Centre for Nanoscience and Nanotechnology and Department of Physics, University of Bath, Bath BA2 7AY, United Kingdom
| | - Jiho Kim
- Department of Physics, Yonsei University, Seoul 03722, Republic of Korea
| | - Soo Yeon Lim
- Department of Physics, Sogang University, Seoul 04107, Republic of Korea
| | - Luca Moreschini
- Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Ji Seop Oh
- Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Republic of Korea
| | - Seung-Hyun Chun
- Department of Physics, Sejong University, Seoul 05006, Republic of Korea
| | - Chris Jozwiak
- Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Aaron Bostwick
- Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Eli Rotenberg
- Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Hyeonsik Cheong
- Department of Physics, Sogang University, Seoul 04107, Republic of Korea
| | - In-Whan Lyo
- Department of Physics, Yonsei University, Seoul 03722, Republic of Korea
| | - Marcin Mucha-Kruczynski
- Centre for Nanoscience and Nanotechnology and Department of Physics, University of Bath, Bath BA2 7AY, United Kingdom
| | - Young Jun Chang
- Department of Physics, University of Seoul, Seoul 02504, Republic of Korea
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Tsai TH, Yang FS, Ho PH, Liang ZY, Lien CH, Ho CH, Lin YF, Chiu PW. High-Mobility InSe Transistors: The Nature of Charge Transport. ACS APPLIED MATERIALS & INTERFACES 2019; 11:35969-35976. [PMID: 31532619 DOI: 10.1021/acsami.9b11052] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
InSe is a high-mobility layered semiconductor with mobility being highly sensitive to any surrounding media that could act as a source of extrinsic scattering. However, little effort has been made to understand electronic transport in thin InSe layers with native surface oxide formed spontaneously upon exposure to an ambient environment. Here, we explore the influence of InOx/InSe interfacial trap states on electronic transport in thin InSe layers. We show that wet oxidation (processed in an ambient environment) causes massive deep-lying band-tail states, through which electrons conduct via 2D variable-range hopping with a short localization length of 1-3 nm. In contrast, a high-quality InOx/InSe interface can be formed in dry oxidation (processed in pure oxygen), with a low trap density of 1012 eV-1 cm-2. Metal-insulator transition can be thus observed in the gate sweep of the field-effect transistors (FETs), indicative of band transport predominated by extended states above the mobility edge. A room-temperature band mobility of 103 cm2/V s is obtained. The profound difference in the transport behavior between the wet and dry InSe FETs suggests that fluctuating Coulomb potential arising from trapped charges at the InOx/InSe interface is the dominant source of disorders in thin InSe channels.
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Affiliation(s)
- Tsung-Han Tsai
- Department of Electrical Engineering , National Tsing Hua University , Hsinchu 30013 , Taiwan
| | - Feng-Shou Yang
- Department of Electrical Engineering , National Tsing Hua University , Hsinchu 30013 , Taiwan
- Department of Physics , National Chung Hsing University , Taichung 40227 , Taiwan
| | - Po-Hsun Ho
- Department of Electrical Engineering , National Tsing Hua University , Hsinchu 30013 , Taiwan
| | - Zheng-Yong Liang
- Department of Electrical Engineering , National Tsing Hua University , Hsinchu 30013 , Taiwan
| | - Chen-Hsin Lien
- Department of Electrical Engineering , National Tsing Hua University , Hsinchu 30013 , Taiwan
| | - Ching-Hwa Ho
- Graduate Institute of Applied Science and Technology , National Taiwan University of Science and Technology , Taipei 10617 , Taiwan
| | - Yen-Fu Lin
- Department of Physics , National Chung Hsing University , Taichung 40227 , Taiwan
| | - Po-Wen Chiu
- Department of Electrical Engineering , National Tsing Hua University , Hsinchu 30013 , Taiwan
- Institute of Atomic and Molecular Sciences, Academia Sinica , Taipei 10617 , Taiwan
- Frontier Research Center on Fundamental and Applied Science of Maters , National Tsing Hua University , Hsinchu 30013 , Taiwan
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6
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Khosravi A, Addou R, Catalano M, Kim J, Wallace RM. High-κ Dielectric on ReS₂: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al₂O₃. MATERIALS 2019; 12:ma12071056. [PMID: 30935054 PMCID: PMC6479988 DOI: 10.3390/ma12071056] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/07/2019] [Revised: 03/26/2019] [Accepted: 03/27/2019] [Indexed: 11/16/2022]
Abstract
We report an excellent growth behavior of a high-κ dielectric on ReS₂, a two-dimensional (2D) transition metal dichalcogenide (TMD). The atomic layer deposition (ALD) of an Al₂O₃ thin film on the UV-Ozone pretreated surface of ReS₂ yields a pinhole free and conformal growth. In-situ half-cycle X-ray photoelectron spectroscopy (XPS) was used to monitor the interfacial chemistry and ex-situ atomic force microscopy (AFM) was used to evaluate the surface morphology. A significant enhancement in the uniformity of the Al₂O₃ thin film was deposited via plasma-enhanced atomic layer deposition (PEALD), while pinhole free Al₂O₃ was achieved using a UV-Ozone pretreatment. The ReS₂ substrate stays intact during all different experiments and processes without any formation of the Re oxide. This work demonstrates that a combination of the ALD process and the formation of weak S⁻O bonds presents an effective route for a uniform and conformal high-κ dielectric for advanced devices based on 2D materials.
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Affiliation(s)
- Ava Khosravi
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, TX 75080, USA.
| | - Rafik Addou
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, TX 75080, USA.
- School of Chemical, Biological, and Environmental Engineering, Oregon State University, Corvallis, OR 93771, USA.
| | - Massimo Catalano
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, TX 75080, USA.
- Institute for Microelectronics and Microsystems, National Council for Research (IMM-CNR), Via Monteroni, ed. A3, 73100 Lecce, Italy.
| | - Jiyoung Kim
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, TX 75080, USA.
| | - Robert M Wallace
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, TX 75080, USA.
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