1
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Zhang J, Wang J, Cai L, Wang S, Wu K, Sun B, Zheng W, Kershaw SV, Jia G, Zhang X, Rogach AL, Yang X. Fine-Tuning Crystal Structures of Lead Bromide Perovskite Nanocrystals through Trace Cadmium(II) Doping for Efficient Color-Saturated Green LEDs. Angew Chem Int Ed Engl 2024; 63:e202403996. [PMID: 38679568 DOI: 10.1002/anie.202403996] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/27/2024] [Revised: 04/09/2024] [Accepted: 04/22/2024] [Indexed: 05/01/2024]
Abstract
Decreasing perovskite nanocrystal size increases radiative recombination due to the quantum confinement effect, but also increases the Auger recombination rate which leads to carrier imbalance in the emitting layers of electroluminescent devices. Here, we overcome this trade-off by increasing the exciton effective mass without affecting the size, which is realized through the trace Cd2+ doping of formamidinium lead bromide perovskite nanocrystals. We observe an ~2.7 times increase in the exciton binding energy benefiting from a slight distortion of the [BX6]4- octahedra caused by doping in the case of that the Auger recombination rate is almost unchanged. As a result, bright color-saturated green emitting perovskite nanocrystals with a photoluminescence quantum yield of 96 % are obtained. Cd2+ doping also shifts up the energy levels of the nanocrystals, relative to the Fermi level so that heavily n-doped emitters convert into only slightly n-doped ones; this boosts the charge injection efficiency of the corresponding light-emitting diodes. The light-emitting devices based on those nanocrystals reached a high external quantum efficiency of 29.4 % corresponding to a current efficiency of 123 cd A-1, and showed dramatically improved device lifetime, with a narrow bandwidth of 22 nm and Commission Internationale de I'Eclairage coordinates of (0.20, 0.76) for color-saturated green emission for the electroluminescence peak centered at 534 nm, thus being fully compliant with the latest standard for wide color gamut displays.
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Affiliation(s)
- Jianfeng Zhang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai, 200072, P. R. China
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Junhui Wang
- State Key Laboratory of Molecular Reaction Dynamics and Dynamics Research Center for Energy and Environmental Materials, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023 Liaoning, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Lei Cai
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, 215123, P. R. China
| | - Sheng Wang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai, 200072, P. R. China
| | - Kaifeng Wu
- State Key Laboratory of Molecular Reaction Dynamics and Dynamics Research Center for Energy and Environmental Materials, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023 Liaoning, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Baoquan Sun
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, 215123, P. R. China
| | - Weitao Zheng
- Key Laboratory of Automobile Materials, Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun, 130012, P. R. China
| | - Stephen V Kershaw
- Department of Materials Science and Engineering, Centre for Functional Photonics (CFP), City University of Hong Kong, Hong Kong SAR, 999077, P. R. China
| | - Guohua Jia
- School of Molecular and Life Science, Curtin University, Bentley, WA 6102, Australia
| | - Xiaoyu Zhang
- Key Laboratory of Automobile Materials, Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun, 130012, P. R. China
| | - Andrey L Rogach
- Department of Materials Science and Engineering, Centre for Functional Photonics (CFP), City University of Hong Kong, Hong Kong SAR, 999077, P. R. China
| | - Xuyong Yang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai, 200072, P. R. China
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2
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Sharma VV, Shin YS, Kim JY, Kim DS, Kim GH. Hole transport layer engineering in high performance quasi-2D perovskite blue light emitting diodes. NANOSCALE 2024; 16:11368-11383. [PMID: 38623652 DOI: 10.1039/d4nr00834k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/17/2024]
Abstract
Quasi-2D perovskites have emerged as highly promising materials for application in perovskite light-emitting diodes (PeLEDs), garnering significant attention due to their outstanding semiconductor properties. These materials boast an inherent multi-quantum well structure that imparts a robust confinement effect, particularly advantageous for blue emission. However, the development of blue emitters utilizing quasi-2D perovskites encounters challenges, notably colour instability, multipeak emission, and suboptimal fluorescence yield. The hole transfer layer (HTL) on which the perovskite layer is deposited in PeLEDs further affects the performance and efficiency. In this review, we delve into the evolution of blue PeLEDs and elucidate the optical properties of quasi-2D perovskites with the primary focus on HTL materials. We explore different HTL materials like PEDOT:PSS, metal oxides, and conjugated polyelectrolytes as well as ionic liquids, and their role in enhancing the colour stability, minimizing interfacial defects and increasing the fluorescence yield. This review endeavours to provide a holistic perspective of the different HTLs and serve as a valuable reference for researchers navigating the realm of HTL engineering towards the realization of high-performance blue quasi-2D PeLEDs.
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Affiliation(s)
- Vivek Vishal Sharma
- Department of Materials Engineering and Convergence Technology, Gyeongsang National University, Jinju 52828, Republic of Korea.
| | - Yun Seop Shin
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.
| | - Jin Young Kim
- Graduate School of Carbon Neutrality, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.
| | - Dong Suk Kim
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.
| | - Gi-Hwan Kim
- Department of Materials Engineering and Convergence Technology, Gyeongsang National University, Jinju 52828, Republic of Korea.
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3
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Zehra N, Malik AH, Parui R, Hussain S, Krishnan Iyer P. A Conjugated Polymer-Based Portable Smartphone Platform for Sensitive and Point-Of-Care Detection of Monoamine Neurotransmitter. Chem Asian J 2024:e202400544. [PMID: 38865578 DOI: 10.1002/asia.202400544] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/11/2024] [Revised: 06/11/2024] [Accepted: 06/12/2024] [Indexed: 06/14/2024]
Abstract
The precise and effective detection of neurotransmitters (NTs) is crucial for clinical investigation of neuronal processes, and timely monitoring of NT-related chronic diseases. However, sensitive detection of specific NT with unprecedented selectivity is highly challenging due to similarities in chemical and electronic structures of various interfering neurochemicals. Herein, an anionic conjugated polyelectrolyte Poly[(9,9-bis(4'-sulfonatobutyl)fluorene-co-alt-1,4-phenylene) sodium], PFPS was rationally designed and synthesized for amplified detection and point-of-care (PoC) determination of monoamine neurotransmitter, serotonin (5-Hydroxy tryptamine or 5-HT, also diagnostic biomarker of carcinoid tumor) in human blood plasma. The PFPS displayed a remarkable sensing response with an exceptionally high fluorescence quenching constant of 1.14×105 M-1 and an ultralow detection limit of 0.67 μM or 0.142 ppm, much below the clinical range. Furthermore, a smartphone-enabled portable platform was constructed for real-time onsite detection of 5-HT by quantification of visual fluorescence response of PFPS into RGB values using a color recognizer android application. The smartphone platform could be readily applied for convenient, non-invasive PoC testing of 5-HT levels in complex biological fluids accurately and is expected to revolutionize clinical diagnosis and personalized health care devices.
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Affiliation(s)
- Nehal Zehra
- Department of Chemistry, Indian Institute of Technology Guwahati, Guwahati, 781039, India
- Department of Chemistry, Shia P.G. College, Lucknow, 226020, U.P. India
| | - Akhtar H Malik
- Department of Chemistry, Government Degree College Sopore, Sopore, J & K, 193201, India
| | - Retwik Parui
- Department of Chemistry, Indian Institute of Technology Guwahati, Guwahati, 781039, India
| | - Sameer Hussain
- School of Chemistry, Xi'an Jiaotong University, Xi'an, 710049, Shaanxi, China
| | - Parameswar Krishnan Iyer
- Department of Chemistry, Indian Institute of Technology Guwahati, Guwahati, 781039, India
- Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati, 781039., India
- School of Health Science and Technology, Indian Institute of Technology Guwahati, Guwahati, 781039., India
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4
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Cheng M, Jiang J, Yan C, Lin Y, Mortazavi M, Kaul AB, Jiang Q. Progress and Application of Halide Perovskite Materials for Solar Cells and Light Emitting Devices. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:391. [PMID: 38470722 PMCID: PMC10933891 DOI: 10.3390/nano14050391] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/11/2024] [Revised: 02/14/2024] [Accepted: 02/16/2024] [Indexed: 03/14/2024]
Abstract
Halide perovskite materials have attracted worldwide attention in the photovoltaic area due to the rapid improvement in efficiency, from less than 4% in 2009 to 26.1% in 2023 with only a nanometer lever photo-active layer. Meanwhile, this nova star found applications in many other areas, such as light emitting, sensor, etc. This review started with the fundamentals of physics and chemistry behind the excellent performance of halide perovskite materials for photovoltaic/light emitting and the methods for preparing them. Then, it described the basic principles for solar cells and light emitting devices. It summarized the strategies including nanotechnology to improve the performance and the application of halide perovskite materials in these two areas: from structure-property relation to how each component in the devices affects the overall performance. Moreover, this review listed the challenges for the future applications of halide perovskite materials.
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Affiliation(s)
- Maoding Cheng
- School of Material Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212100, China
- Department of Chemistry and Physics, University of Arkansas at Pine Bluff, Pine Bluff, AR 71601, USA
| | - Jingtian Jiang
- School of Material Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212100, China
| | - Chao Yan
- School of Material Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212100, China
| | - Yuankun Lin
- Department of Physics, University of North Texas, Denton, TX 76203, USA
| | - Mansour Mortazavi
- Department of Chemistry and Physics, University of Arkansas at Pine Bluff, Pine Bluff, AR 71601, USA
| | - Anupama B Kaul
- Department of Electrical Engineering, University of North Texas, Denton, TX 76207, USA
| | - Qinglong Jiang
- Department of Chemistry and Physics, University of Arkansas at Pine Bluff, Pine Bluff, AR 71601, USA
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5
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Park JH, Noh YW, Ha JM, Harit AK, Tripathi A, Lee J, Lee BR, Song MH, Woo HY. Anionic Conjugated Polyelectrolyte as a Semiconducting Additive for Efficient and Stable Perovskite Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37983071 DOI: 10.1021/acsami.3c12878] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/21/2023]
Abstract
Perovskite defects are a major hurdle in the efficiency and stability of perovskite solar cells (PSCs). While various defect passivation materials have been explored, most are insulators that hinder charge transport. This study investigates the potential of two different π-conjugated polyelectrolytes (CPEs), MPS2-TEA and PCPDTBT2-TMA, as semiconducting additives in PSCs. The CPEs differ in electrical conductivity, offering a unique approach to bridge defect mitigation and charge carrier transport. Unlike previous uses of CPEs mainly as interlayers or charge transport layers, we explore their direct effect on defect passivation within a perovskite layer. Secondary ion microscopy reveals the even distribution of CPEs within the perovskite layer and their efficient defect passivation potential is studied through various spectroscopic analyses. Comparing MPS2-TEA and PCPDTBT2-TMA, we find MPS2-TEA to be superior in defect passivation. The highly conductive nature of PCPDTBT2-TMA due to self-doping diminishes its defect passivation ability. The negative sulfonate groups in the side chains of PCPDTBT2-TMA stabilize polarons, reducing defect passivation capability. Finally, the PSCs with MPS2-TEA achieve remarkable power conversion efficiencies (PCEs) of 22.7% for 0.135 cm2 and 20.0% for large-area (1 cm2) cells. Furthermore, the device with MPS2-TEA maintained over 87.3% of initial PCE after 960 h at continuous 1-sun illumination and 89% of PCE after 850 h at 85 °C in a nitrogen glovebox without encapsulation. This highlights CPEs as promising defect passivation additives, unlocking potential for improved efficiency and stability not only in PSCs but also in wider applications.
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Affiliation(s)
- Jong Hyun Park
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan 44919, Republic of Korea
- School of Chemical Engineering, Chonnam National University, Gwangju 61186, Republic of Korea
| | - Young Wook Noh
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan 44919, Republic of Korea
| | - Jung Min Ha
- Department of Chemistry, Korea University, Seoul 02841, Republic of Korea
| | - Amit Kumar Harit
- Department of Chemistry, Korea University, Seoul 02841, Republic of Korea
| | - Ayushi Tripathi
- Department of Chemistry, Korea University, Seoul 02841, Republic of Korea
| | - Jeongjae Lee
- School of Earth and Environmental Sciences, Seoul National University, Seoul 08826, Republic of Korea
| | - Bo Ram Lee
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419 Republic of Korea
| | - Myoung Hoon Song
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan 44919, Republic of Korea
| | - Han Young Woo
- Department of Chemistry, Korea University, Seoul 02841, Republic of Korea
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6
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Yang K, Zheng J, Mao J, Zhao H, Ju S, Zhang Q, Lin Z, Yu Y, Li F. Interface-Induced Crystallinity Enhancement of Perovskite Quantum Dots for Highly Efficient Light-Emitting Diodes. ACS APPLIED MATERIALS & INTERFACES 2023; 15:40062-40069. [PMID: 37552832 DOI: 10.1021/acsami.3c07302] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/10/2023]
Abstract
Perovskite quantum dot light-emitting diodes (QLEDs) with high color purity and wide color gamut have good application prospects in the next generation of display technology. However, colloidal perovskite quantum dots (PQDs) may introduce a large number of defects during the film-forming process, which is not conducive to the luminous efficiency of the device. Meanwhile, the disordered film formation of PQDs will form interfacial defects and reduce the device performance. Here, we report an interface-induced crystallinity enhancement (IICE) strategy to increase the crystallinity of PQDs at the hole transport layer (HTL)/PQD interface. As a result, both the Br- vacancies in the PQD film and the interfacial defects were well passivated and the leakage current was also suppressed. We achieved QLEDs with a maximum external quantum efficiency (EQE) of 16.45% and current efficiency (CE) of 61.77 cd/A, showing improved performance to more than twice that of the control devices. The IICE strategy paves a new way to enhance the crystallinity of PQD films, so as to improve the performance of QLEDs for application in the future display field.
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Affiliation(s)
- Kaiyu Yang
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, People's Republic of China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, People's Republic of China
| | - Jinping Zheng
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, People's Republic of China
| | - Jinliang Mao
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, People's Republic of China
| | - Haobing Zhao
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, People's Republic of China
| | - Songman Ju
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, People's Republic of China
| | - QingKai Zhang
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, People's Republic of China
| | - Zhihan Lin
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, People's Republic of China
| | - Yongshen Yu
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, People's Republic of China
| | - Fushan Li
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, People's Republic of China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, People's Republic of China
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7
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Jang CH, Kim YI, Harit AK, Ha JM, Park S, Noh YW, Lee AY, Kim KS, Jung JW, Woo HY, Song MH. Multifunctional Conjugated Molecular Additives for Highly Efficient Perovskite Light-Emitting Diodes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2210511. [PMID: 36930970 DOI: 10.1002/adma.202210511] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/13/2022] [Revised: 02/13/2023] [Indexed: 06/16/2023]
Abstract
Further optimization of perovskite light-emitting diodes (PeLEDs) is impeded by crystal deformation caused by residual stress and defect formation with subsequent non-radiative recombination. Molecular additives for defect passivation are widely studied; however, the majority have insulating properties that hinder charge injection and transport. Herein, highly efficient green-emitting PeLEDs are reported by introducing semiconducting molecular additives (Fl-OEGA and Fl-C8A). Transmission electron microscopy shows that conjugated additives exist primarily at the grain boundaries of perovskite, and Kelvin probe force microscopy confirms that the variation in contact potential difference between grain boundaries and perovskite crystal domains is significantly reduced. The residual tensile stress is reduced by 13% and the activation energy for ion migration increases in the Fl-OEGA-treated perovskite film, compared to those of the film without additives. Compared to insulating 2,2'-(ethylenedioxy)diethylamine (EDEA), the introduction of semiconducting additives prevents a significant reduction in the charge-transport capability. Furthermore, the PeLEDs with Fl-OEGA show a negligible shift in the turn-on voltage and a significantly smaller decrease in the current density with increasing Fl-OEGA compared to the devices with EDEA. Finally, the 3D CsPbBr3 -PeLEDs show the highest external quantum efficiency of 21.3% by the incorporation of semiconducting Fl-OEGA as a new multifunctional additive.
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Affiliation(s)
- Chung Hyeon Jang
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Ye In Kim
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Amit Kumar Harit
- Department of Chemistry, Korea University, Seoul, 02841, Republic of Korea
| | - Jung Min Ha
- Department of Chemistry, Korea University, Seoul, 02841, Republic of Korea
| | - Sejeong Park
- Korea I. T. S, Application Group, Korea I. T. S. Co., Ltd., Seoul, 06373, Republic of Korea
| | - Young Wook Noh
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Ah-Young Lee
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Kyeong Su Kim
- Department of Advanced Materials Engineering for Information & Electronics, Kyung Hee University, Yongin-si, 446-701, Republic of Korea
| | - Jae Woong Jung
- Department of Advanced Materials Engineering for Information & Electronics, Kyung Hee University, Yongin-si, 446-701, Republic of Korea
| | - Han Young Woo
- Department of Chemistry, Korea University, Seoul, 02841, Republic of Korea
| | - Myoung Hoon Song
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
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8
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Lao Y, Yang S, Yu W, Guo H, Zou Y, Chen Z, Xiao L. Multifunctional π-Conjugated Additives for Halide Perovskite. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2105307. [PMID: 35315240 PMCID: PMC9189639 DOI: 10.1002/advs.202105307] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/18/2021] [Revised: 02/10/2022] [Indexed: 06/14/2023]
Abstract
Additive is a conventional way to enhance halide perovskite active layer performance in multiaspects. Among them, π-conjugated molecules have significantly special influence on halide perovskite due to the superior electrical conductivity, rigidity property, and good planarity of π-electrons. In particular, π-conjugated additives usually have stronger interaction with halide perovskites. Therefore, they help with higher charge mobility and longer device lifetime compared with alkyl-based molecules. In this review, the detailed effect of conjugated molecules is discussed in the following parts: defect passivation, lattice orientation guidance, crystallization assistance, energy level rearrangement, and stability improvement. Meanwhile, the roles of conjugated ligands played in low-dimensional perovskite devices are summarized. This review gives an in-depth discussion about how conjugated molecules interact with halide perovskites, which may help understand the improved performance mechanism of perovskite device with π-conjugated additives. It is expected that π-conjugated organic additives for halide perovskites can provide unprecedented opportunities for the future improvement of perovskite devices.
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Affiliation(s)
- Yinan Lao
- State Key Laboratory for Mesoscopic Physics and Department of PhysicsPeking UniversityBeijing100871P. R. China
| | - Shuang Yang
- State Key Laboratory for Mesoscopic Physics and Department of PhysicsPeking UniversityBeijing100871P. R. China
| | - Wenjin Yu
- State Key Laboratory for Mesoscopic Physics and Department of PhysicsPeking UniversityBeijing100871P. R. China
| | - Haoqing Guo
- State Key Laboratory for Mesoscopic Physics and Department of PhysicsPeking UniversityBeijing100871P. R. China
| | - Yu Zou
- State Key Laboratory for Mesoscopic Physics and Department of PhysicsPeking UniversityBeijing100871P. R. China
| | - Zhijian Chen
- State Key Laboratory for Mesoscopic Physics and Department of PhysicsPeking UniversityBeijing100871P. R. China
| | - Lixin Xiao
- State Key Laboratory for Mesoscopic Physics and Department of PhysicsPeking UniversityBeijing100871P. R. China
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9
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Hamilton I, Suh M, Bailey J, Bradley DDC, Kim JS. Optimizing Interfacial Energetics for Conjugated Polyelectrolyte Electron Injection Layers in High Efficiency and Fast Responding Polymer Light Emitting Diodes. ACS APPLIED MATERIALS & INTERFACES 2022; 14:24668-24680. [PMID: 35583466 PMCID: PMC9164195 DOI: 10.1021/acsami.2c05640] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/30/2022] [Accepted: 05/04/2022] [Indexed: 06/15/2023]
Abstract
Modification of the π-conjugated backbone structure of conjugated polyelectrolytes (CPEs) for use as electron injection layers (EILs) in polymer light emitting diodes (PLEDs) has previously brought conflicted results in the literature in terms of device efficiency and turn-on response time. Herein, we determine the energetics at the CPE and the light emitting polymer (LEP) interface as a key factor for PLED device performance. By varying the conjugated backbone structure of both the LEP and CPE, we control the nature of the CPE/LEP interface in terms of optical energy gap offset, interfacial energy level offset, and location of the electron-hole recombination zone. We use a wide gap CPE with a shallow LUMO (F8im-Br) and one with a smaller gap and deeper LUMO (F8imBT-Br), in combination with three different LEPs. We find that the formation of a type II heterojunction at the CPE/LEP interfaces causes interfacial luminance quenching, which is responsible for poor efficiency in PLED devices. The effect is exacerbated with increased energy level offset from ionic rearrangement and hole accumulation occurring near the CPE/LEP interface. However, a deep CPE LUMO is found to be beneficial for fast current and luminance turn-on times of devices. This work provides important CPE molecular design rules for EIL use, offering progress toward a universal PLED-compatible CPE that can simultaneously deliver high efficiency and fast response times. In particular, engineering the LUMO position to be deep enough for fast device turn-on while avoiding the creation of a large energy level offset at the CPE/LEP interface is shown to be highly desirable.
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Affiliation(s)
- Iain Hamilton
- Department
of Physics and Centre for Processable Electronics, Imperial College London, London SW7 2AZ, United Kingdom
- Division
of Physical Sciences and Engineering, King
Abdullah University of Science and Technology (KAUST), Thuwal, 23955−6900 Saudi Arabia
| | - Minwon Suh
- Department
of Physics and Centre for Processable Electronics, Imperial College London, London SW7 2AZ, United Kingdom
| | - Jim Bailey
- Department
of Physics and Centre for Processable Electronics, Imperial College London, London SW7 2AZ, United Kingdom
| | - Donal D. C. Bradley
- Division
of Physical Sciences and Engineering, King
Abdullah University of Science and Technology (KAUST), Thuwal, 23955−6900 Saudi Arabia
| | - Ji-Seon Kim
- Department
of Physics and Centre for Processable Electronics, Imperial College London, London SW7 2AZ, United Kingdom
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10
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Li N, Jia Y, Guo Y, Zhao N. Ion Migration in Perovskite Light-Emitting Diodes: Mechanism, Characterizations, and Material and Device Engineering. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108102. [PMID: 34847262 DOI: 10.1002/adma.202108102] [Citation(s) in RCA: 43] [Impact Index Per Article: 21.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/09/2021] [Revised: 11/26/2021] [Indexed: 06/13/2023]
Abstract
In recent years, perovskite light-emitting diodes (PeLEDs) have emerged as a promising new lighting technology with high external quantum efficiency, color purity, and wavelength tunability, as well as, low-temperature processability. However, the operational stability of PeLEDs is still insufficient for their commercialization. The generation and migration of ionic species in metal halide perovskites has been widely acknowledged as the primary factor causing the performance degradation of PeLEDs. Herein, this topic is systematically discussed by considering the fundamental and engineering aspects of ion-related issues in PeLEDs, including the material and processing origins of ion generation, the mechanisms driving ion migration, characterization approaches for probing ion distributions, the effects of ion migration on device performance and stability, and strategies for ion management in PeLEDs. Finally, perspectives on remaining challenges and future opportunities are highlighted.
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Affiliation(s)
- Nan Li
- Department of Electronic Engineering, The Chinese University of Hong Kong, New Territories, Hong Kong
| | - Yongheng Jia
- Department of Electronic Engineering, The Chinese University of Hong Kong, New Territories, Hong Kong
| | - Yuwei Guo
- Department of Electronic Engineering, The Chinese University of Hong Kong, New Territories, Hong Kong
| | - Ni Zhao
- Department of Electronic Engineering, The Chinese University of Hong Kong, New Territories, Hong Kong
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11
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Zhao C, Wu W, Zhan H, Yuan W, Li H, Zhang D, Wang D, Cheng Y, Shao S, Qin C, Wang L. Phosphonate/Phosphine Oxide Dyad Additive for Efficient Perovskite Light-Emitting Diodes. Angew Chem Int Ed Engl 2022; 61:e202117374. [PMID: 35080099 DOI: 10.1002/anie.202117374] [Citation(s) in RCA: 17] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/30/2021] [Indexed: 11/10/2022]
Abstract
Additives play a critical role for efficient perovskite light-emitting diodes (PeLEDs). Here, we report a novel phosphonate/phosphine oxide dyad molecular additive (PE-TPPO), with unique dual roles of passivating defects and enhancing carrier radiative recombination, to boost the device efficiency of metal-halide perovskites. In addition to the defect passivation effect of the phosphine oxide group to enhance the photoluminescence intensity and homogeneity of perovskite film, the phosphonate group with strong electron affinity can capture the injected electrons to increase local carrier concentration and accelerate the carrier radiative recombination in the electroluminescence process. Owing to their synergistic enhancement on device efficiency, quasi-two-dimensional green PeLEDs modified by this dyad additive exhibit a maximum external quantum efficiency, current efficiency, and power efficiency of 25.1 %, 100.5 cd A-1 , and 98.7 lm W-1 , respectively, which are among the reported state-of-the-art efficiencies.
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Affiliation(s)
- Chenyang Zhao
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, Jilin, 130022, P. R. China
| | - Wenping Wu
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, Jilin, 130022, P. R. China.,School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China
| | - Hongmei Zhan
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, Jilin, 130022, P. R. China
| | - Wei Yuan
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, Jilin, 130022, P. R. China.,School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China
| | - Hongxiang Li
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, Jilin, 130022, P. R. China
| | - Dezhong Zhang
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, Jilin, 130022, P. R. China
| | - Dapeng Wang
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, Jilin, 130022, P. R. China.,School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China
| | - Yanxiang Cheng
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, Jilin, 130022, P. R. China.,School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China
| | - Shiyang Shao
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, Jilin, 130022, P. R. China.,School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China
| | - Chuanjiang Qin
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, Jilin, 130022, P. R. China.,School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China
| | - Lixiang Wang
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, Jilin, 130022, P. R. China.,School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China
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12
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Zhao C, Wu W, Zhan H, Yuan W, Li H, Zhang D, Wang D, Cheng Y, Shao S, Qin C, Wang L. Phosphonate/Phosphine Oxide Dyad Additive for Efficient Perovskite Light‐Emitting Diodes. Angew Chem Int Ed Engl 2022. [DOI: 10.1002/ange.202117374] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
Affiliation(s)
- Chenyang Zhao
- State Key Laboratory of Polymer Physics and Chemistry Changchun Institute of Applied Chemistry Chinese Academy of Sciences Changchun Jilin 130022 P. R. China
| | - Wenping Wu
- State Key Laboratory of Polymer Physics and Chemistry Changchun Institute of Applied Chemistry Chinese Academy of Sciences Changchun Jilin 130022 P. R. China
- School of Applied Chemistry and Engineering University of Science and Technology of China Hefei Anhui 230026 P. R. China
| | - Hongmei Zhan
- State Key Laboratory of Polymer Physics and Chemistry Changchun Institute of Applied Chemistry Chinese Academy of Sciences Changchun Jilin 130022 P. R. China
| | - Wei Yuan
- State Key Laboratory of Polymer Physics and Chemistry Changchun Institute of Applied Chemistry Chinese Academy of Sciences Changchun Jilin 130022 P. R. China
- School of Applied Chemistry and Engineering University of Science and Technology of China Hefei Anhui 230026 P. R. China
| | - Hongxiang Li
- State Key Laboratory of Polymer Physics and Chemistry Changchun Institute of Applied Chemistry Chinese Academy of Sciences Changchun Jilin 130022 P. R. China
| | - Dezhong Zhang
- State Key Laboratory of Polymer Physics and Chemistry Changchun Institute of Applied Chemistry Chinese Academy of Sciences Changchun Jilin 130022 P. R. China
| | - Dapeng Wang
- State Key Laboratory of Polymer Physics and Chemistry Changchun Institute of Applied Chemistry Chinese Academy of Sciences Changchun Jilin 130022 P. R. China
- School of Applied Chemistry and Engineering University of Science and Technology of China Hefei Anhui 230026 P. R. China
| | - Yanxiang Cheng
- State Key Laboratory of Polymer Physics and Chemistry Changchun Institute of Applied Chemistry Chinese Academy of Sciences Changchun Jilin 130022 P. R. China
- School of Applied Chemistry and Engineering University of Science and Technology of China Hefei Anhui 230026 P. R. China
| | - Shiyang Shao
- State Key Laboratory of Polymer Physics and Chemistry Changchun Institute of Applied Chemistry Chinese Academy of Sciences Changchun Jilin 130022 P. R. China
- School of Applied Chemistry and Engineering University of Science and Technology of China Hefei Anhui 230026 P. R. China
| | - Chuanjiang Qin
- State Key Laboratory of Polymer Physics and Chemistry Changchun Institute of Applied Chemistry Chinese Academy of Sciences Changchun Jilin 130022 P. R. China
- School of Applied Chemistry and Engineering University of Science and Technology of China Hefei Anhui 230026 P. R. China
| | - Lixiang Wang
- State Key Laboratory of Polymer Physics and Chemistry Changchun Institute of Applied Chemistry Chinese Academy of Sciences Changchun Jilin 130022 P. R. China
- School of Applied Chemistry and Engineering University of Science and Technology of China Hefei Anhui 230026 P. R. China
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13
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Harit AK, Jung ED, Ha JM, Park JH, Tripathi A, Noh YW, Song MH, Woo HY. Triphenylamine-Based Conjugated Polyelectrolyte as a Hole Transport Layer for Efficient and Scalable Perovskite Solar Cells. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2104933. [PMID: 34846779 DOI: 10.1002/smll.202104933] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/19/2021] [Revised: 10/22/2021] [Indexed: 06/13/2023]
Abstract
π-Conjugated polyelectrolytes (CPEs) have been studied as interlayers on top of a separate hole transport layer (HTL) to improve the wetting, interfacial defect passivation, and crystal growth of perovskites. However, very few CPE-based HTLs have been reported without rational molecular design as ideal HTLs for perovskite solar cells (PeSCs). In this study, the authors synthesize a triphenylamine-based anionic CPE (TPAFS-TMA) as an HTL for p-i-n-type PeSCs. TPAFS-TMA has appropriate frontier molecular orbital (FMO) levels similar to those of the commonly used poly(bis(4-phenyl)-2,4,6-trimethylphenylamine) (PTAA) HTL. The ionic and semiconducting TPAFS-TMA shows high compatibility, high transmittance, appropriate FMO energy levels for hole extraction and electron blocking, as well as defect passivating properties, which are confirmed using various optical and electrical analyses. Thus, the PeSC with the TPAFS-TMA HTL exhibits the best power conversion efficiency (PCE) of 20.86%, which is better than that of the PTAA-based device (PCE of 19.97%). In addition, it exhibits negligible device-to-device variations in its photovoltaic performance, contrary to the device with PTAA. Finally, a large-area PeSC (1 cm2 ) and mini-module (3 cm2 ), showing PCEs of 19.46% and 18.41%, respectively, are successfully fabricated. The newly synthesized TPAFS-TMA may suggest its great potential as an HTL for large-area PeSCs.
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Affiliation(s)
- Amit Kumar Harit
- Department of Chemistry, KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, Republic of Korea
| | - Eui Dae Jung
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan, 44919, Republic of Korea
| | - Jung Min Ha
- Department of Chemistry, KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, Republic of Korea
| | - Jong Hyun Park
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan, 44919, Republic of Korea
| | - Ayushi Tripathi
- Department of Chemistry, KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, Republic of Korea
| | - Young Wook Noh
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan, 44919, Republic of Korea
| | - Myoung Hoon Song
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan, 44919, Republic of Korea
| | - Han Young Woo
- Department of Chemistry, KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, Republic of Korea
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14
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Liu Y, Zhang L, Chen S, Liu C, Li Y, Wu J, Wang D, Jiang Z, Li Y, Li Y, Wang X, Xu B. Water-Soluble Conjugated Polyelectrolyte Hole Transporting Layer for Efficient Sky-Blue Perovskite Light-Emitting Diodes. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2101477. [PMID: 34363331 DOI: 10.1002/smll.202101477] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/13/2021] [Revised: 06/11/2021] [Indexed: 06/13/2023]
Abstract
An optimized charge transporting layer (CTL) under perovskite film is crucial for efficient photoelectric devices. Here, a new water-soluble conjugated polyeletrolyte (CPE) with CH3 NH3 + (MA+ ) counterion termed as TB(MA) is used as the hole transporting layer (HTL) instead of the acidic poly(3,4-ethylenedioxythiophene):poly-styrene sulfonate (PEDOT:PSS) in sky-blue perovskite light-emitting diodes (PeLEDs). The inherent hydrophilicity of CPE enables a well-growth of quasi-2D perovskite layer with uniform and compact morphology, enhanced crystallinity with rare defect density and excellent energy transfer, resulting in a high photoluminescence quantum yield (PLQY) up to 62.0%. Especially, the MA+ counterion is able to passivate the interfacial defects in the perovskite, which optimize the interfacial compatibility between HTL and perovskite film. Finally, efficient sky-blue PeLEDs, emitting at 488 nm, are fabricated with high external quantum efficiency (EQE) up to 13.5% by using CPE as HTL. In addition, due to the low-temperature processability of water-soluble CPE, an efficient flexible sky-blue PeLEDs based on PEN/ITO substrate is also obtained with high EQE of 8.3%. Using CPE as HTL is an effective strategy toward fabricating efficient blue PeLEDs.
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Affiliation(s)
- Yanliang Liu
- Department of Materials Science and Engineering, and Shenzhen Engineering Research and Development Center for Flexible Solar Cells, Southern University of Science and Technology, Shenzhen, 518055, China
- Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Shenzhen, 518055, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Luozheng Zhang
- Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, Southern University of Science and Technology, Shenzhen, 518055, China
- Academy for Advanced Interdisciplinary Studies, Department of Materials Science and Engineering, Shenzhen Engineering Research and Development Center for Flexible Solar Cells, Southern University of Science and Technology, Shenzhen, 518055, China
- Key Laboratory of Energy Conversion and Storage Technologies, Ministry of Education, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Shi Chen
- Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, Southern University of Science and Technology, Shenzhen, 518055, China
- Academy for Advanced Interdisciplinary Studies, Department of Materials Science and Engineering, Shenzhen Engineering Research and Development Center for Flexible Solar Cells, Southern University of Science and Technology, Shenzhen, 518055, China
- Key Laboratory of Energy Conversion and Storage Technologies, Ministry of Education, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Chang Liu
- Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, Southern University of Science and Technology, Shenzhen, 518055, China
- Academy for Advanced Interdisciplinary Studies, Department of Materials Science and Engineering, Shenzhen Engineering Research and Development Center for Flexible Solar Cells, Southern University of Science and Technology, Shenzhen, 518055, China
- Key Laboratory of Energy Conversion and Storage Technologies, Ministry of Education, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Yaru Li
- Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, Southern University of Science and Technology, Shenzhen, 518055, China
- Academy for Advanced Interdisciplinary Studies, Department of Materials Science and Engineering, Shenzhen Engineering Research and Development Center for Flexible Solar Cells, Southern University of Science and Technology, Shenzhen, 518055, China
- Key Laboratory of Energy Conversion and Storage Technologies, Ministry of Education, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Jiawen Wu
- Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, Southern University of Science and Technology, Shenzhen, 518055, China
- Academy for Advanced Interdisciplinary Studies, Department of Materials Science and Engineering, Shenzhen Engineering Research and Development Center for Flexible Solar Cells, Southern University of Science and Technology, Shenzhen, 518055, China
- Key Laboratory of Energy Conversion and Storage Technologies, Ministry of Education, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Deng Wang
- Department of Materials Science and Engineering, and Shenzhen Engineering Research and Development Center for Flexible Solar Cells, Southern University of Science and Technology, Shenzhen, 518055, China
- Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Shenzhen, 518055, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Zhengyan Jiang
- Department of Materials Science and Engineering, and Shenzhen Engineering Research and Development Center for Flexible Solar Cells, Southern University of Science and Technology, Shenzhen, 518055, China
- Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Shenzhen, 518055, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Yan Li
- Department of Materials Science and Engineering, and Shenzhen Engineering Research and Development Center for Flexible Solar Cells, Southern University of Science and Technology, Shenzhen, 518055, China
- Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Shenzhen, 518055, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Yang Li
- Department of Materials Science and Engineering, and Shenzhen Engineering Research and Development Center for Flexible Solar Cells, Southern University of Science and Technology, Shenzhen, 518055, China
- Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Shenzhen, 518055, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Xingzhu Wang
- Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, Southern University of Science and Technology, Shenzhen, 518055, China
- Academy for Advanced Interdisciplinary Studies, Department of Materials Science and Engineering, Shenzhen Engineering Research and Development Center for Flexible Solar Cells, Southern University of Science and Technology, Shenzhen, 518055, China
- Key Laboratory of Energy Conversion and Storage Technologies, Ministry of Education, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Baomin Xu
- Department of Materials Science and Engineering, and Shenzhen Engineering Research and Development Center for Flexible Solar Cells, Southern University of Science and Technology, Shenzhen, 518055, China
- Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Shenzhen, 518055, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, Southern University of Science and Technology, Shenzhen, 518055, China
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15
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Kwon D, Kim JY, Lee SH, Lee E, Kim J, Harit AK, Woo HY, Joo J. Charge-Transfer Effect and Enhanced Photoresponsivity of WS 2- and MoSe 2-Based Field Effect Transistors with π-Conjugated Polyelectrolyte. ACS APPLIED MATERIALS & INTERFACES 2021; 13:40880-40890. [PMID: 34424668 DOI: 10.1021/acsami.1c09386] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The characteristics of field effect transistors (FETs) fabricated using two-dimensional (2D) transition-metal dichalcogenides (TMDCs) can be modulated by surface treatment of the active layers. In this study, an ionic π-conjugated polyelectrolyte, poly(9,9-bis(4'-sulfonatobutyl)fluorene-alt-1,4-phenylene) potassium (FPS-K), was used for the surface treatment of MoSe2 and WS2 FETs. The photoluminescence (PL) intensities of monolayer (1L)-MoSe2 and 1L-WS2 clearly decreased, and the PL peaks were red-shifted after FPS-K treatment, suggesting a charge-transfer effect. In addition, the n-channel current of both the MoSe2 and WS2 FETs increased and the threshold voltage (Vth) shifted negatively after FPS-K treatment owing to the charge-transfer effect. The photoresponsivity of the MoSe2 FET under light irradiation (λex = 455 nm) increased considerably, from 5300 A W-1 to approximately 10 000 A W-1, after FPS-K treatment, and similar behavior was observed in the WS2 FET. The results can be explained in terms of the increase in electron concentration due to photogating. The external quantum efficiency and photodetectivity of both FETs were also enhanced by the charge-transfer effect resulting from surface treatment with FPS-K containing mobile cations (K+) and fixed anions (SO3-), as well as by the photogating effect. The variation in charge-carrier density due to the photogating and charge-transfer effects is estimated to be approximately 2 × 1012 cm-2. The results suggest that π-conjugated polyelectrolytes such as FPS-K can be a promising candidate for the passivation of TMDC-based FETs and obtaining enhanced photoresponsivity.
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Affiliation(s)
- Dayeong Kwon
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Jun Young Kim
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Sang-Hun Lee
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Eunji Lee
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jeongyong Kim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Amit Kumar Harit
- Department of Chemistry, Korea University, Seoul 02841, Republic of Korea
| | - Han Young Woo
- Department of Chemistry, Korea University, Seoul 02841, Republic of Korea
| | - Jinsoo Joo
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
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16
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Kim S, Jang JH, Wu Z, Lee MJ, Woo HY, Hwang I. Interfacial Defects Change the Correlation between Photoluminescence, Ideality Factor, and Open-Circuit Voltage in Perovskite Solar Cells. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2101839. [PMID: 34228396 DOI: 10.1002/smll.202101839] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/29/2021] [Revised: 04/30/2021] [Indexed: 06/13/2023]
Abstract
The ideality factor (nid ) and photoluminescence (PL) analyses assess charge recombination characteristics in perovskite solar cells (PeSCs). However, their correlations with open-circuit voltage (Voc ) are often found to be complicated depending on the recombination types in the devices. Herein, the correlation of nid , PL characteristics and Voc is elucidated depending on the interfacial crystal quality in triple-cation mixed-halide perovskite, Cs0.05 (MA0.17 FA0.83 )0.95 Pb(I0.83 Br0.17 )3 , deposited on different hole transport layers (HTLs). In the devices with low quality interfacial crystals, Voc increases together with nid , which originates from the light intensity-dependence of majority carrier at the interface. Meanwhile, a negative correlation between Voc and nid is observed for devices with high quality interfacial crystals. The authors discuss the cases that PL enhancement by the improvement of overall crystal quality can fail to correlate with a Voc increase if interfacial crystal quality becomes worse. The study highlights that interfacial crystal quality evaluation can help to understand charge recombination via nid and PL measurements, and more importantly provide information of which defect engineering between at the interface and in the bulk would be more effective for device optimization.
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Affiliation(s)
- Sohyeon Kim
- Department of Electronic Materials Engineering, Kwangwoon University, Seoul, 01897, Republic of Korea
| | - Jun Hyeok Jang
- School of Advanced Materials Engineering, Kookmin University, Seoul, 02707, Republic of Korea
| | - Ziang Wu
- Department of Chemistry, KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, Republic of Korea
| | - Mi Jung Lee
- School of Advanced Materials Engineering, Kookmin University, Seoul, 02707, Republic of Korea
| | - Han Young Woo
- Department of Chemistry, KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, Republic of Korea
| | - Inchan Hwang
- Department of Electronic Materials Engineering, Kwangwoon University, Seoul, 01897, Republic of Korea
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17
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Chevrier M, Kesters J, Houston JE, Van den Brande N, Chambon S, Richeter S, Van Mele B, Arnold T, Mehdi A, Lazzaroni R, Dubois P, Evans RC, Maes W, Clément S. Phosphonium‐based polythiophene conjugated polyelectrolytes with different surfactant counterions: thermal properties, self‐assembly and photovoltaic performances. POLYM INT 2021. [DOI: 10.1002/pi.6088] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/30/2022]
Affiliation(s)
- Michèle Chevrier
- ICGM, Univ. Montpellier, CNRS, ENSCM Montpellier France
- Service des Matériaux Polymères et Composites (SMPC), Centre d'Innovation et de Recherche en Matériaux et Polymères (CIRMAP), Université de Mons – UMONS Mons Belgium
| | - Jurgen Kesters
- UHasselt – Hasselt University, Institute for Materials Research (IMO), Design and Synthesis of Organic Semiconductors (DSOS) Diepenbeek Belgium
| | - Judith E Houston
- Jülich Centre for Neutron Science (JCNS) at the Heinz Maier‐Leibnitz Zentrum (MLZ), Forschungszentrum Jülich GmbH Garching Germany
| | - Niko Van den Brande
- Physical Chemistry and Polymer Science (FYSC), Vrije Universiteit Brussel (VUB) Brussels Belgium
| | - Sylvain Chambon
- Univ. Bordeaux, IMS, CNRS, UMR 5218, Bordeaux INP, ENSCBP Talence France
| | | | - Bruno Van Mele
- Physical Chemistry and Polymer Science (FYSC), Vrije Universiteit Brussel (VUB) Brussels Belgium
| | - Thomas Arnold
- Diamond Light Source Ltd, Harwell Science and Innovation Campus Didcot UK
- European Spallation Source ERIC Lund Sweden
- Department of Chemistry University of Bath Bath UK
- ISIS Neutron and Muon Source, Rutherford Appleton Laboratory Didcot UK
| | - Ahmad Mehdi
- ICGM, Univ. Montpellier, CNRS, ENSCM Montpellier France
| | - Roberto Lazzaroni
- Laboratory for Chemistry of Novel Materials, CIRMAP University of Mons – UMONS Mons Belgium
| | - Philippe Dubois
- Service des Matériaux Polymères et Composites (SMPC), Centre d'Innovation et de Recherche en Matériaux et Polymères (CIRMAP), Université de Mons – UMONS Mons Belgium
| | - Rachel C Evans
- Department of Materials Science and Metallurgy University of Cambridge Cambridge UK
| | - Wouter Maes
- UHasselt – Hasselt University, Institute for Materials Research (IMO), Design and Synthesis of Organic Semiconductors (DSOS) Diepenbeek Belgium
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18
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Wang D, Shi Z, Zhang X, Cui Z, Wang Q. O 2-Mediated transformation of 9-phenanthrenol: an approach to the synthesis of phenanthrenyl ketal and 9-fluorenones. Org Chem Front 2021. [DOI: 10.1039/d0qo01234c] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/03/2023]
Abstract
We report the first example for O2-mediated oxidation of 9-phenanthrenol to phenanthrenyl ketal under basic conditions, followed by transformation to 9-fluorenones.
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Affiliation(s)
- Dongwei Wang
- International Joint Research Laboratory of Nano-Micro Architecture Chemistry (NMAC)
- Department of Organic Chemistry
- College of Chemistry
- Jilin University
- Changchun 130012
| | - Zuosen Shi
- State Key Laboratory of Supramolecular Structure and Materials
- Jilin University
- Changchun 130012
- P. R. China
| | - Xueyou Zhang
- International Joint Research Laboratory of Nano-Micro Architecture Chemistry (NMAC)
- Department of Organic Chemistry
- College of Chemistry
- Jilin University
- Changchun 130012
| | - Zhanchen Cui
- State Key Laboratory of Supramolecular Structure and Materials
- Jilin University
- Changchun 130012
- P. R. China
| | - Qifeng Wang
- International Joint Research Laboratory of Nano-Micro Architecture Chemistry (NMAC)
- Department of Organic Chemistry
- College of Chemistry
- Jilin University
- Changchun 130012
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19
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A-Site Cation Engineering for Efficient Blue-Emissive Perovskite Light-Emitting Diodes. ENERGIES 2020. [DOI: 10.3390/en13246689] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
Abstract
Metal halide perovskites have been investigated for the next-generation light-emitting materials because of their advantages such as high photoluminescence quantum yield (PLQY), excellent color purity, and facile color tunability. Recently, red- and green-emissive perovskite light-emitting diodes (PeLEDs) have shown an external quantum efficiency (EQE) of over 20%, whereas there is still room for improvement for blue emissive PeLEDs. By controlling the halide compositions of chloride (Cl−) and bromide (Br−), the bandgap of perovskites can be easily tuned for blue emission. However, halide segregation easily occurrs in the mixed-halide perovskite under light irradiation and LED operation because of poor phase stability. Here, we explore the effect of A-site cation engineering on the phase stability of the mixed-halide perovskites and find that a judicious selection of low dipole moment A cation (formamidinium or cesium) suppresses the halide segregation. This enables efficient bandgap tuning and electroluminescence stability for sky blue emissive PeLEDs over the current density of 15 mA/cm2.
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Jeong JE, Park JH, Jang CH, Song MH, Woo HY. Multifunctional Charge Transporting Materials for Perovskite Light-Emitting Diodes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2002176. [PMID: 32886378 DOI: 10.1002/adma.202002176] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/30/2020] [Revised: 05/03/2020] [Indexed: 06/11/2023]
Abstract
Despite their low exciton-binding energies, metal halide perovskites are extensively studied as light-emitting materials owing to narrow emission with high color purity, easy/wide color tunability, and high photoluminescence quantum yields. To improve the efficiency of perovskite light-emitting diodes (PeLEDs), much effort has been devoted to controlling the emitting layer morphologies to induce charge confinement and decrease the nonradiative recombination. The interfaces between the emitting layer and charge transporting layer (CTL) are vulnerable to various defects that deteriorate the efficiency and stability of the PeLEDs. Therefore, the establishment of multifunctional CTLs that can improve not only charge transport but also critical factors that influence device performance, such as defect passivation, morphology/phase control, ion migration suppression, and light outcoupling efficiency, are highly required. Herein, the fundamental limitations of perovskites as emitters (i.e., defects, morphological and phase instability, high refractive index with poor outcoupling) and the recent developments with regard to multifunctional CTLs to compensate such limitations are summarized, and their device applications are also reviewed. Finally, based on the importance of multifunctional CTLs, the outlook and research prospects of multifunctional CTLs for the further improvement of PeLEDs are discussed.
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Affiliation(s)
- Ji-Eun Jeong
- Department of Chemistry, Korea University, Anam-ro 145, Seoul, 02841, Republic of Korea
| | - Jong Hyun Park
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan, 44919, Republic of Korea
| | - Chung Hyeon Jang
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan, 44919, Republic of Korea
| | - Myoung Hoon Song
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan, 44919, Republic of Korea
| | - Han Young Woo
- Department of Chemistry, Korea University, Anam-ro 145, Seoul, 02841, Republic of Korea
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21
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Wang H, Yuan H, Yu J, Zhang C, Li K, You M, Li W, Shao J, Wei J, Zhang X, Chen R, Yang X, Zhao W. Boosting the Efficiency of NiO x-Based Perovskite Light-Emitting Diodes by Interface Engineering. ACS APPLIED MATERIALS & INTERFACES 2020; 12:53528-53536. [PMID: 33179493 DOI: 10.1021/acsami.0c16139] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Nickel oxide (NiOx) is a promising hole-transporting material for perovskite light-emitting diodes (PeLEDs) because of its low cost, excellent stability, and simple fabrication process. However, the electroluminescence efficiencies of NiOx-based PeLEDs are greatly limited by inefficient hole injection and exciton quenching at the NiOx-perovskite interfaces. Here, a novel interfacial engineering method with sodium dodecyl sulfate-oxygen plasma (SDS-OP) is demonstrated to simultaneously overcome the aforementioned issues. Experimental results reveal that a short OP treatment on the top of the SDS-coated NiOx significantly deepens the NiOx work function (from 4.23 to 4.85 eV) because of the formation of a large surface dipole, allowing for efficient hole injection. Moreover, the SDS-OP layer passivates the electronic surface trap states of perovskite films and suppresses the exciton quenching by NiOx. These improvements inhibit the nonradiative decays at the NiOx-perovskite interface. As a result, the external quantum efficiency of CsPbBr3 LEDs is increased from 0.052 to 2.5%; that of FAPbBr3 nanocrystals LEDs is increased from 5.6 to 7.6%.
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Affiliation(s)
- Haoran Wang
- Flexible Printed Electronics Technology Center, Harbin Institute of Technology, Shenzhen 518055, China
- State Key Laboratory of Advanced Welding & Joining, Harbin Institute of Technology, Shenzhen 518055, China
| | - Hao Yuan
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, 149 Yanchang Road, Shanghai 200072, China
| | - Jiahao Yu
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China
| | - Chen Zhang
- Flexible Printed Electronics Technology Center, Harbin Institute of Technology, Shenzhen 518055, China
- State Key Laboratory of Advanced Welding & Joining, Harbin Institute of Technology, Shenzhen 518055, China
| | - Kang Li
- Flexible Printed Electronics Technology Center, Harbin Institute of Technology, Shenzhen 518055, China
- State Key Laboratory of Advanced Welding & Joining, Harbin Institute of Technology, Shenzhen 518055, China
| | - Mengqing You
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, 149 Yanchang Road, Shanghai 200072, China
| | - Wenqiang Li
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, 149 Yanchang Road, Shanghai 200072, China
| | - Jian Shao
- Flexible Printed Electronics Technology Center, Harbin Institute of Technology, Shenzhen 518055, China
- State Key Laboratory of Advanced Welding & Joining, Harbin Institute of Technology, Shenzhen 518055, China
| | - Jun Wei
- Flexible Printed Electronics Technology Center, Harbin Institute of Technology, Shenzhen 518055, China
- State Key Laboratory of Advanced Welding & Joining, Harbin Institute of Technology, Shenzhen 518055, China
| | - Xiaoyu Zhang
- College of Materials Science and Engineering, Jilin University, Changchun 130012, China
| | - Rui Chen
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China
| | - Xuyong Yang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, 149 Yanchang Road, Shanghai 200072, China
| | - Weiwei Zhao
- Flexible Printed Electronics Technology Center, Harbin Institute of Technology, Shenzhen 518055, China
- State Key Laboratory of Advanced Welding & Joining, Harbin Institute of Technology, Shenzhen 518055, China
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22
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Jang CH, Harit AK, Lee S, Kim SH, Jeong JE, Park JH, Jung ED, Ha JM, Kwak SK, Woo HY, Song MH. Sky-Blue-Emissive Perovskite Light-Emitting Diodes: Crystal Growth and Interfacial Control Using Conjugated Polyelectrolytes as a Hole-Transporting Layer. ACS NANO 2020; 14:13246-13255. [PMID: 32910640 DOI: 10.1021/acsnano.0c04968] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
A series of poly(fluorene-co-phenylene)-based anionic conjugated polyelectrolytes (CPEs) are prepared with varying sizes of counterions (tetramethylammonium, tetraethylammonium, and tetrabutylammonium (TBA+)) and studied as a hole-transporting layer (HTL) for sky-blue-emissive perovskite light-emitting diodes (PeLEDs). Ionic CPE HTLs improve the wettability, compatibility, and nucleation of perovskite crystals at interfaces, enabling highly crystalline perovskite crystal growth with enhanced light-emitting properties. By incorporating the CPE HTLs containing bulky TBA+ counterions (MPS2-TBA) in place of PEDOT:PSS, the decreased phonon-electron coupling and increased exciton binding energy in perovskites are measured by temperature-dependent photoluminescence (PL) measurements. By increasing the size of counterions in CPE interlayers, the PL intensities and lifetimes of perovskite films increase. Through space-charge-limited current measurements, the lowest trap density is measured in the perovskite film on MPS2-TBA, emphasizing a critical role of larger counterions. Using density functional theory, MPS2-TBA is calculated to show the strongest adsorption affinity toward the interstitial defect of lead ions, explaining its pronounced interfacial defect passivation. The counterion size in CPE interlayers is interpreted as a main factor to determine the adsorption affinity onto perovskite, which determines the interacted area as noncovalent adsorption occurs. Finally, the sky-blue-emissive quasi-2D PeLED with MPS2-TBA shows the highest luminance efficiency (a peak EQE of 2.6% at 489 nm) and significantly improved spectral stability.
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Affiliation(s)
- Chung Hyeon Jang
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan 44919, Republic of Korea
| | - Amit Kumar Harit
- Department of Chemistry, Korea University, Seoul 02841, Republic of Korea
| | - Seungjin Lee
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada
| | - Su Hwan Kim
- Department of Energy Engineering and School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan 44919, Republic of Korea
| | - Ji-Eun Jeong
- Department of Chemistry, Korea University, Seoul 02841, Republic of Korea
| | - Jong Hyun Park
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan 44919, Republic of Korea
| | - Eui Dae Jung
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan 44919, Republic of Korea
| | - Jung Min Ha
- Department of Chemistry, Korea University, Seoul 02841, Republic of Korea
| | - Sang Kyu Kwak
- Department of Energy Engineering and School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan 44919, Republic of Korea
| | - Han Young Woo
- Department of Chemistry, Korea University, Seoul 02841, Republic of Korea
| | - Myoung Hoon Song
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan 44919, Republic of Korea
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Shin YS, Yoon YJ, Heo J, Song S, Kim JW, Park SY, Cho HW, Kim GH, Kim JY. Functionalized PFN-X (X = Cl, Br, or I) for Balanced Charge Carriers of Highly Efficient Blue Light-Emitting Diodes. ACS APPLIED MATERIALS & INTERFACES 2020; 12:35740-35747. [PMID: 32633483 DOI: 10.1021/acsami.0c09968] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
All-inorganic perovskite nanocrystals (PeNCs), CsPbX3 (X = Cl, Br, or I), have been considered as one of the prospective emissive materials for display applications, which showed superior photoluminescence quantum yield and high color purity with narrow spectral line width. Recently, high-performance green and red perovskite light-emitting diodes (PeLEDs) were introduced; however, the efficiency of blue PeLEDs still lagged owing to PeNCs' deep HOMO energy level (∼6.0 eV), which is in discord with the adjacent organic interlayer. In this work, we demonstrated an interfacial engineering strategy with conjugated polyelectrolytes, functionalized PFN (poly[(9,9-bis(3'-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)]) with halide anions, between the hole injection layer and PeNCs. By introducing PFN-X (X = Cl, Br, or I), they exhibit well-balanced charge carriers and resultant effective radiative recombination in the PeNC layer with reduced hole injection barrier and electron blocking behavior. Among them, in particular, the PFN-Cl-treated PeLEDs display a maximum external quantum efficiency of 1.34% at 470 nm electroluminescence emission with enhanced spectral operating stability.
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Affiliation(s)
- Yun Seop Shin
- Perovtronics Research Center, Department of Energy Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Yung Jin Yoon
- Perovtronics Research Center, Department of Energy Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Jungwoo Heo
- Perovtronics Research Center, Department of Energy Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Suhee Song
- Perovtronics Research Center, Department of Energy Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Jae Won Kim
- Perovtronics Research Center, Department of Energy Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Song Yi Park
- Perovtronics Research Center, Department of Energy Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Hye Won Cho
- Perovtronics Research Center, Department of Energy Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Gi-Hwan Kim
- School of Materials Science and Engineering, Gyeongsang National University, Jinju 52828, Republic of Korea
| | - Jin Young Kim
- Perovtronics Research Center, Department of Energy Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
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24
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Jung ED, Harit AK, Kim DH, Jang CH, Park JH, Cho S, Song MH, Woo HY. Multiply Charged Conjugated Polyelectrolytes as a Multifunctional Interlayer for Efficient and Scalable Perovskite Solar Cells. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2002333. [PMID: 32567159 DOI: 10.1002/adma.202002333] [Citation(s) in RCA: 23] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/05/2020] [Revised: 05/11/2020] [Indexed: 06/11/2023]
Abstract
A series of anionic conjugated polyelectrolytes (CPEs) is synthesized based on poly(fluorene-co-phenylene) by varying the side-chain ionic density from two to six per repeat units (MPS2-TMA, MPS4-TMA, and MPS6-TMA). The effect of MPS2, 4, 6-TMA as interlayers on top of a hole-extraction layer of poly(bis(4-phenyl)-2,4,6-trimethylphenylamine (PTAA) is investigated in inverted perovskite solar cells (PeSCs). Owing to the improved wettability of perovskites on hydrophobic PTAA with the CPEs, the PeSCs with CPE interlayers demonstrate a significantly enhanced device performance, with negligible device-to-device dependence relative to the reference PeSC without CPEs. By increasing the ionic density in the MPS-TMA interlayers, the wetting, interfacial defect passivation, and crystal growth of the perovskites are significantly improved without increasing the series resistance of the PeSCs. In particular, the open-circuit voltage increases from 1.06 V for the PeSC with MPS2-TMA to 1.11 V for the PeSC with MPS6-TMA. The trap densities of the PeSCs with MPS2,4,6-TMA are further analyzed using frequency-dependent capacitance measurements. Finally, a large-area (1 cm2 ) PeSC is successfully fabricated with MPS6-TMA, showing a power conversion efficiency of 18.38% with negligible hysteresis and a stable power output under light soaking for 60 s.
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Affiliation(s)
- Eui Dae Jung
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan, 44919, Republic of Korea
| | - Amit Kumar Harit
- Department of Chemistry, Korea University, Seoul, 02841, Republic of Korea
| | - Do Hui Kim
- Department of Physics and EHSRC, University of Ulsan, Ulsan, 44610, Republic of Korea
| | - Chung Hyeon Jang
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan, 44919, Republic of Korea
| | - Jong Hyun Park
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan, 44919, Republic of Korea
| | - Shinuk Cho
- Department of Physics and EHSRC, University of Ulsan, Ulsan, 44610, Republic of Korea
| | - Myoung Hoon Song
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan, 44919, Republic of Korea
| | - Han Young Woo
- Department of Chemistry, Korea University, Seoul, 02841, Republic of Korea
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25
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Kim S, Jeong JE, Hong J, Lee K, Lee MJ, Woo HY, Hwang I. Improved Interfacial Crystallization by Synergic Effects of Precursor Solution Stoichiometry and Conjugated Polyelectrolyte Interlayer for High Open-Circuit Voltage of Perovskite Photovoltaic Diodes. ACS APPLIED MATERIALS & INTERFACES 2020; 12:12328-12336. [PMID: 31997636 DOI: 10.1021/acsami.9b22283] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The open-circuit voltage (Voc) of perovskite photovoltaic diodes depends largely on the selection of charge transport layers (CTLs) and surface passivation, which makes it important to understand the physical processes occurring at the interface between the perovskite and a CTL. We provide a direct correlation between Voc and the interfacial characteristics of perovskites tuned through stoichiometry engineering of precursor solutions and surface modification of the underlying poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) layer. Poor quality interfacial perovskite crystals were observed on top of the PEDOT:PSS layer, resulting in strong interfacial recombination and a low Voc. In contrast, the growth of the interfacial perovskite crystals was significantly improved by the synergic effects of varying the precursor solution composition and covering the surface with a pH-neutral conjugated polyelectrolyte, poly[2,6-(4,4-bis(potassium butanylsulfonate)-4H-cyclopenta[2,1-b;3,4-b']dithiophene)-alt-4,7-(2,1,3-benzothiadiazole)] (CPE-K), which possesses potassium ions as counter ions. The influence of the energy-level alignment at the interface on Voc was also discussed. Our findings highlight that improved perovskite crystallization at the interface can facilitate bulk growth of perovskite grains in the vertical direction and effectively suppress nonradiative surface charge recombination, thus enhancing the short-circuit current and Voc.
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Affiliation(s)
- Sohyeon Kim
- Department of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, Republic of Korea
| | - Ji-Eun Jeong
- Department of Chemistry, Korea University, Seoul 02841, Republic of Korea
| | - Jungyun Hong
- Department of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, Republic of Korea
| | - Kangmin Lee
- School of Advanced Materials Engineering, Kookmin University, Seoul 02707, Republic of Korea
| | - Mi Jung Lee
- School of Advanced Materials Engineering, Kookmin University, Seoul 02707, Republic of Korea
| | - Han Young Woo
- Department of Chemistry, Korea University, Seoul 02841, Republic of Korea
| | - Inchan Hwang
- Department of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, Republic of Korea
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