1
|
Guo L, Hu S, Gu X, Zhang R, Wang K, Yan W, Sun X. Emerging Spintronic Materials and Functionalities. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2301854. [PMID: 37309258 DOI: 10.1002/adma.202301854] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/27/2023] [Revised: 06/01/2023] [Indexed: 06/14/2023]
Abstract
The explosive growth of the information era has put forward urgent requirements for ultrahigh-speed and extremely efficient computations. In direct contrary to charge-based computations, spintronics aims to use spins as information carriers for data storage, transmission, and decoding, to help fully realize electronic device miniaturization and high integration for next-generation computing technologies. Currently, many novel spintronic materials have been developed with unique properties and multifunctionalities, including organic semiconductors (OSCs), organic-inorganic hybrid perovskites (OIHPs), and 2D materials (2DMs). These materials are useful to fulfill the demand for developing diverse and advanced spintronic devices. Herein, these promising materials are systematically reviewed for advanced spintronic applications. Due to the distinct chemical and physical structures of OSCs, OIHPs, and 2DMs, their spintronic properties (spin transport and spin manipulation) are discussed separately. In addition, some multifunctionalities due to photoelectric and chiral-induced spin selectivity (CISS) are overviewed, including the spin-filter effect, spin-photovoltaics, spin-light emitting devices, and spin-transistor functions. Subsequently, challenges and future perspectives of using these multifunctional materials for the development of advanced spintronics are presented.
Collapse
Affiliation(s)
- Lidan Guo
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Shunhua Hu
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Xianrong Gu
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Rui Zhang
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Kai Wang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing, 100044, P. R. China
| | - Wenjing Yan
- School of Physics and Astronomy, University of Nottingham, University Park, Nottingham, NG9 2RD, UK
| | - Xiangnan Sun
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- School of Material Science and Engineering, Zhengzhou University, Zhengzhou, 450001, P. R. China
| |
Collapse
|
2
|
Wang F, Zhang T, Xie R, Liu A, Dai F, Chen Y, Xu T, Wang H, Wang Z, Liao L, Wang J, Zhou P, Hu W. Next-Generation Photodetectors beyond Van Der Waals Junctions. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2301197. [PMID: 36960667 DOI: 10.1002/adma.202301197] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2023] [Revised: 03/16/2023] [Indexed: 06/18/2023]
Abstract
With the continuous advancement of nanofabrication techniques, development of novel materials, and discovery of useful manipulation mechanisms in high-performance applications, especially photodetectors, the morphology of junction devices and the way junction devices are used are fundamentally revolutionized. Simultaneously, new types of photodetectors that do not rely on any junction, providing a high signal-to-noise ratio and multidimensional modulation, have also emerged. This review outlines a unique category of material systems supporting novel junction devices for high-performance detection, namely, the van der Waals materials, and systematically discusses new trends in the development of various types of devices beyond junctions. This field is far from mature and there are numerous methods to measure and evaluate photodetectors. Therefore, it is also aimed to provide a solution from the perspective of applications in this review. Finally, based on the insight into the unique properties of the material systems and the underlying microscopic mechanisms, emerging trends in junction devices are discussed, a new morphology of photodetectors is proposed, and some potential innovative directions in the subject area are suggested.
Collapse
Affiliation(s)
- Fang Wang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tao Zhang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Runzhang Xie
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Anna Liu
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Fuxing Dai
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yue Chen
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tengfei Xu
- School of Microelectronics, Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Hailu Wang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Zhen Wang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Lei Liao
- College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
| | - Jianlu Wang
- School of Microelectronics, Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Peng Zhou
- School of Microelectronics, Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| |
Collapse
|
3
|
Meng K, Guo L, Sun X. Strategies and applications of generating spin polarization in organic semiconductors. NANOSCALE HORIZONS 2023; 8:1132-1154. [PMID: 37424331 DOI: 10.1039/d3nh00101f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/11/2023]
Abstract
The advent of spintronics has undoubtedly revolutionized data storage, processing, and sensing applications. Organic semiconductors (OSCs), characterized by long spin relaxation times (>μs) and abundant spin-dependent properties, have emerged as promising materials for advanced spintronic applications. To successfully implement spin-related functions in organic spintronic devices, the four fundamental processes of spin generation, transport, manipulation, and detection form the main building blocks and are commonly in demand. Thereinto, the effective generation of spin polarization in OSCs is a precondition, but in practice, this has not been an easy task. In this context, considerable efforts have been made on this topic, covering novel materials systems, spin-dependent theories, and device fabrication technologies. In this review, we underline recent advances in external spin injection and organic property-induced spin polarization, according to the distinction between the sources of spin polarization. We focused mainly on summarizing and discussing both the physical mechanism and representative research on spin generation in OSCs, especially for various spin injection methods, organic magnetic materials, the chiral-induced spin selectivity effect, and the spinterface effect. Finally, the challenges and prospects that allow this topic to continue to be dynamic were outlined.
Collapse
Affiliation(s)
- Ke Meng
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, P. R. China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Lidan Guo
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, P. R. China.
| | - Xiangnan Sun
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, P. R. China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
- School of Material Science and Engineering, Zhengzhou University, Zhengzhou 450001, P. R. China
| |
Collapse
|
4
|
Maiti A, Pal AJ. Spin-Selective Charge Transport in Lead-Free Chiral Perovskites: The Key towards High-Anisotropy in Circularly-Polarized Light Detection. Angew Chem Int Ed Engl 2022; 61:e202214161. [PMID: 36325645 DOI: 10.1002/anie.202214161] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/26/2022] [Indexed: 11/06/2022]
Abstract
A pair of zero-dimensional lead-free chiral perovskites is introduced towards the detection of circularly polarized light (CPL). Although spin-polarized carriers are generated in the perovskites under the CPL, the absorption anisotropy remained low leading to mostly similar density of photogenerated carriers under the two CPLs. Interestingly, due to the intrinsic chirality in the perovskites, they exhibited chirality-induced spin-selectivity (CISS) allowing the transport of only one type of spin-half states. A high anisotropy in photocurrent along the out-of-plane direction has therefore appeared resulting in a spin-dependent photovoltaic effect in vertical heterojunction devices and making them suitable for CPL detection. While a self-powered CPL detector showed a limited (but one of the highest to date) anisotropy factor of 0.3 due to possible spin-flips during the transport process, the factor rose to 0.6 under bias prompting extension of the effective spin-diffusion length.
Collapse
Affiliation(s)
- Abhishek Maiti
- School of Physical Sciences, Indian Association for the Cultivation of Science, 700032, Kolkata, India
| | - Amlan J Pal
- School of Physical Sciences, Indian Association for the Cultivation of Science, 700032, Kolkata, India.,UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, 452001, Indore, India
| |
Collapse
|
5
|
Zhang Y, Guo L, Zhu X, Sun X. The Application of Organic Semiconductor Materials in Spintronics. Front Chem 2020; 8:589207. [PMID: 33195092 PMCID: PMC7642617 DOI: 10.3389/fchem.2020.589207] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/30/2020] [Accepted: 09/16/2020] [Indexed: 11/18/2022] Open
Abstract
π-Conjugated semiconductors, primarily composed of elements with low atomic number, are regarded as promising spin-transport materials due to the weak spin-orbit coupling interaction and hence long spin relaxation time. Moreover, a large number of additional functions of organic semiconductors (OSCs), such as the abundant photo-electric properties, flexibility, and tailorability, endow the organic spintronic devices more unique properties and functionalities. Particularly, the integration of the photo-electric functionality and excellent spin transport property of OSCs in a single spintronic device has even shown great potential for the realization of spin manipulation in OSCs. In this review, the application of OSCs in spintronic study will be succinctly discussed. As the most important and extensive application, the long-distance spin transport property of OSCs will be discussed first. Subsequently, several multifunctional spintronic devices based on OSCs will be summarized. After that, the organic-based magnets used for the electrodes of spintronic devices will be introduced. Finally, according to the latest progress, spin manipulation in OSCs via novel spintronic devices together with other prospects and challenges will be outlined.
Collapse
Affiliation(s)
- Yixiao Zhang
- Key Laboratory of Nanosystem and Hierarchical Fabrication, Chinese Academy of Sciences (CAS) Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
| | - Lidan Guo
- Key Laboratory of Nanosystem and Hierarchical Fabrication, Chinese Academy of Sciences (CAS) Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
| | - Xiangwei Zhu
- Key Laboratory of Nanosystem and Hierarchical Fabrication, Chinese Academy of Sciences (CAS) Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
| | - Xiangnan Sun
- Key Laboratory of Nanosystem and Hierarchical Fabrication, Chinese Academy of Sciences (CAS) Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou, China
| |
Collapse
|