Effect of Adventitious Carbon on Pit Formation of Monolayer MoS2

Atomic-Scale Mechanisms of MoS2 Oxidation for Kinetic Control of MoS2/MoO3 Interfaces

Oxidation of transition metal dichalcogenides (TMDs) occurs readily under a variety of conditions. Therefore, understanding the oxidation processes is necessary for successful TMD handling and device fabrication. Here, we investigate atomic-scale oxidation mechanisms of the most widely studied TMD, MoS₂. We find that thermal oxidation results in α-phase crystalline MoO₃ with sharp interfaces, voids, and crystallographic alignment with the underlying MoS₂. Experiments with remote substrates prove that thermal oxidation proceeds via vapor-phase mass transport and redeposition, a challenge to forming thin, conformal films. Oxygen plasma accelerates the kinetics of oxidation relative to the kinetics of mass transport, forming smooth and conformal oxides. The resulting amorphous MoO₃ can be grown with subnanometer to several-nanometer thickness, and we calibrate the oxidation rate for different instruments and process parameters. Our results provide quantitative guidance for managing both the atomic scale structure and thin-film morphology of oxides in the design and processing of TMD devices.

Elucidation of Novel Potassium-Mediated Oxidation and Etching of Two-Dimensional Transition Metal Dichalcogenides

Preparation of edge-rich two-dimensional (2D) transition metal dichalocogenides (TMDs) has been actively investigated with the aim to improve their electrical and catalytic properties. Here, we elucidate the role of potassium ions in oxidation of TMDs and suggest a consequent novel anisotropic etching mechanism driven by self-running oxide droplets. We discover that potassium-mediated oxidation of MoS₂ leads to the formation of K-intercalated hexagonal-phase molybdenum oxides (h-K_xMoO₃), whereas orthorhombic-phase oxides are formed in the absence of potassium ions. Metastable h-K_xMoO₃ appears to have decomposed into oxide droplets at higher temperature. Self-running of the oxide droplets leads to layer-by-layer anisotropic etching of MoS₂ along the armchair direction. The motion of the droplets appears to be triggered by the surface energy instability between the oxide droplets and the underlying MoS₂ layer. This study opens new possibilities to design and manufacture novel edge-rich 2D TMDs that do not follow the equilibrium Wulff shape by modulating their oxidation with the assistance of alkali metals and also offers fundamental insights into the interactions between nanodroplets and 2D materials toward edge engineering.

Operando Study of Thermal Oxidation of Monolayer MoS2

Monolayer MoS2 is a promising semiconductor to overcome the physical dimension limits of microelectronic devices. Understanding the thermochemical stability of MoS2 is essential since these devices generate heat and are susceptible to oxidative environments. Herein, the promoting effect of molybdenum oxides (MoO x ) particles on the thermal oxidation of MoS2 monolayers is shown by employing operando X-ray absorption spectroscopy, ex situ scanning electron microscopy and X-ray photoelectron spectroscopy. The study demonstrates that chemical vapor deposition-grown MoS2 monolayers contain intrinsic MoO x and are quickly oxidized at 100 °C (3 vol% O2/He), in contrast to previously reported oxidation thresholds (e.g., 250 °C, t ≤ 1 h in the air). Otherwise, removing MoO x increases the thermal oxidation onset temperature of monolayer MoS2 to 300 °C. These results indicate that MoO x promote oxidation. An oxide-free lattice is critical to the long-term stability of monolayer MoS2 in state-of-the-art 2D electronic, optical, and catalytic applications.