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Wang S, Wang Y, Guo T, Cao S. A Long Wave-Infrared Miniatured Quantum Dot Spectrometer. Anal Chem 2024; 96:14090-14098. [PMID: 39165157 DOI: 10.1021/acs.analchem.4c00695] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/22/2024]
Abstract
In this work, a long-wave infrared (LWIR) quantum dot (QD) spectrometer was constructed for the first time by integrating a 255-element HgSe QD filter array with an LWIR array detector. The filter array was fabricated using a combination inkjet printing strategy with eight types of T-dodecyl mercaptan-terminated HgSe QD inks. The stability and morphology of the QDs were improved by optimizing the purification methodology and ligand modification. Combined with the compressive-sensing-based least-squares linear regression (CS-LS) algorithm, the LWIR QD spectrometer achieved a spectral resolution of 5.4 cm-1 over a wide spectral range of 8 to 14 μm, enabling the detection of the chemical warfare agent simulant dimethyl methylphosphonate. This technology is expected to facilitate the development of smaller volumes and more accurate identification of various targets in the future. This paper offers an approach to fabricating low-cost LWIR spectrometers and promoting the scale-up applications of QD devices.
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Affiliation(s)
- Suhui Wang
- State Key Laboratory of NBC Protection for Civilian, Beijing 102205, China
| | - Yi Wang
- State Key Laboratory of NBC Protection for Civilian, Beijing 102205, China
| | - Tengxiao Guo
- State Key Laboratory of NBC Protection for Civilian, Beijing 102205, China
| | - Shuya Cao
- State Key Laboratory of NBC Protection for Civilian, Beijing 102205, China
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2
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You K, Wang Z, Lin J, Guo X, Lin L, Liu Y, Li F, Huang W. On-Demand Picoliter-Level-Droplet Inkjet Printing for Micro Fabrication and Functional Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2402638. [PMID: 39149907 DOI: 10.1002/smll.202402638] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/02/2024] [Revised: 07/29/2024] [Indexed: 08/17/2024]
Abstract
With the advent of Internet of Things (IoTs) and wearable devices, manufacturing requirements have shifted toward miniaturization, flexibility, environmentalization, and customization. Inkjet printing, as a non-contact picoliter-level droplet printing technology, can achieve material deposition at the microscopic level, helping to achieve high resolution and high precision patterned design. Meanwhile, inkjet printing has the advantages of simple process, high printing efficiency, mask-free digital printing, and direct pattern deposition, and is gradually emerging as a promising technology to meet such new requirements. However, there is a long way to go in constructing functional materials and emerging devices due to the uncommercialized ink materials, complicated film-forming process, and geometrically/functionally mismatched interface, limiting film quality and device applications. Herein, recent developments in working mechanisms, functional ink systems, droplet ejection and flight process, droplet drying process, as well as emerging multifunctional and intelligence applications including optics, electronics, sensors, and energy storage and conversion devices is reviewed. Finally, it is also highlight some of the critical challenges and research opportunities. The review is anticipated to provide a systematic comprehension and valuable insights for inkjet printing, thereby facilitating the advancement of their emerging applications.
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Affiliation(s)
- Kejia You
- Strait Institute of Flexible Electronics (SIFE), Future Technologies, Fujian Key Laboratory of Flexible Electronics, Fujian Normal University and Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, 350117, China
| | - Zhen Wang
- Strait Institute of Flexible Electronics (SIFE), Future Technologies, Fujian Key Laboratory of Flexible Electronics, Fujian Normal University and Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, 350117, China
| | - Jiasong Lin
- Strait Institute of Flexible Electronics (SIFE), Future Technologies, Fujian Key Laboratory of Flexible Electronics, Fujian Normal University and Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, 350117, China
| | - Xuan Guo
- Key Laboratory of Optoelectronic Science and Technology for Medicine of Ministry of Education, Fujian Provincial Key Laboratory of Photonics Technology, Fujian Normal University, Fuzhou, 350117, China
| | - Liangxu Lin
- Strait Institute of Flexible Electronics (SIFE), Future Technologies, Fujian Key Laboratory of Flexible Electronics, Fujian Normal University and Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, 350117, China
| | - Yang Liu
- Strait Institute of Flexible Electronics (SIFE), Future Technologies, Fujian Key Laboratory of Flexible Electronics, Fujian Normal University and Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, 350117, China
| | - Fushan Li
- Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350117, China
| | - Wei Huang
- Frontiers Science Center for Flexible Electronics (FSCFE), MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, China
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Liu D, Weng K, Zhao H, Wang S, Qiu H, Luo X, Lu S, Duan L, Bai S, Zhang H, Li J. Nondestructive Direct Optical Patterning of Perovskite Nanocrystals with Carbene-Based Ligand Cross-Linkers. ACS NANO 2024; 18:6896-6907. [PMID: 38376996 DOI: 10.1021/acsnano.3c07975] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/22/2024]
Abstract
Microscale patterning of colloidal perovskite nanocrystals (NCs) is essential for their integration in advanced device platforms, such as high-definition displays. However, perovskite NCs usually show degraded optical and/or electrical properties after patterning with existing approaches, posing a critical challenge for their optoelectronic applications. Here we achieve nondestructive, direct optical patterning of perovskite NCs with rationally designed carbene-based cross-linkers and demonstrate their applications in high-performance light-emitting diodes. We reveal that both the photochemical properties and the electronic structures of cross-linkers need to be carefully tailored to the material properties of perovskite NCs. This method produces high-resolution (∼4000 ppi) NC patterns with preserved photoluminescent quantum efficiencies and charge transport properties. Prototype light-emitting diodes with patterned/cross-linked NC layers show a maximum luminance of over 60000 cd m-2 and a peak external quantum efficiency of 16%, among the highest for patterned perovskite electroluminescent devices. Such a material-adapted patterning method enabled by designs from a photochemistry perspective could foster the applications of perovskite NCs in system-level electronic and optoelectronic devices.
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Affiliation(s)
- Dan Liu
- Department of Chemistry, Center for Bioanalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology (Ministry of Education), Tsinghua University, Beijing 100084, People's Republic of China
| | - Kangkang Weng
- Department of Chemistry, Center for Bioanalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology (Ministry of Education), Tsinghua University, Beijing 100084, People's Republic of China
| | - Haifeng Zhao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610000, People's Republic of China
| | - Song Wang
- Department of Chemistry, Center for Bioanalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology (Ministry of Education), Tsinghua University, Beijing 100084, People's Republic of China
| | - Hengwei Qiu
- Department of Chemistry, Center for Bioanalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology (Ministry of Education), Tsinghua University, Beijing 100084, People's Republic of China
| | - Xiyu Luo
- Department of Chemistry, Key Laboratory of Organic Optoelectronics and Molecular Engineering (Ministry of Education), Tsinghua University, Beijing 100084, People's Republic of China
| | - Shaoyong Lu
- Department of Chemistry, Center for Bioanalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology (Ministry of Education), Tsinghua University, Beijing 100084, People's Republic of China
| | - Lian Duan
- Department of Chemistry, Key Laboratory of Organic Optoelectronics and Molecular Engineering (Ministry of Education), Tsinghua University, Beijing 100084, People's Republic of China
- Laboratory of Flexible Electronic Technology, Tsinghua University, Beijing 100084, People's Republic of China
| | - Sai Bai
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610000, People's Republic of China
| | - Hao Zhang
- Department of Chemistry, Center for Bioanalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology (Ministry of Education), Tsinghua University, Beijing 100084, People's Republic of China
- Laboratory of Flexible Electronic Technology, Tsinghua University, Beijing 100084, People's Republic of China
| | - Jinghong Li
- Department of Chemistry, Center for Bioanalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology (Ministry of Education), Tsinghua University, Beijing 100084, People's Republic of China
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Qie Y, Hu H, Yu K, Zhong C, Ju S, Liu Y, Guo T, Li F. Ligand-Nondestructive Direct Photolithography Assisted by Semiconductor Polymer Cross-Linking for High-Resolution Quantum Dot Light-Emitting Diodes. NANO LETTERS 2024; 24:1254-1260. [PMID: 38230959 DOI: 10.1021/acs.nanolett.3c04230] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/18/2024]
Abstract
The photolithographic patterning of fine quantum dot (QD) films is of great significance for the construction of QD optoelectronic device arrays. However, the photolithography methods reported so far either introduce insulating photoresist or manipulate the surface ligands of QDs, each of which has negative effects on device performance. Here, we report a direct photolithography strategy without photoresist and without engineering the QD surface ligands. Through cross-linking of the surrounding semiconductor polymer, QDs are spatially confined to the network frame of the polymer to form high-quality patterns. More importantly, the wrapped polymer incidentally regulates the energy levels of the emitting layer, which is conducive to improving the hole injection capacity while weakening the electron injection level, to achieve balanced injection of carriers. The patterned QD light-emitting diodes (with a pixel size of 1.5 μm) achieve a high external quantum efficiency of 16.25% and a brightness of >1.4 × 105 cd/m2. This work paves the way for efficient high-resolution QD light-emitting devices.
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Affiliation(s)
- Yuan Qie
- Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350116, P. R. China
| | - Hailong Hu
- Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350116, P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, P. R. China
| | - Kuibao Yu
- Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350116, P. R. China
| | - Chao Zhong
- Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350116, P. R. China
| | - Songman Ju
- College of Physical Science and Technology, Dalian University, Dalian 116622, P. R. China
| | - Yanbing Liu
- Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350116, P. R. China
| | - Tailiang Guo
- Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350116, P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, P. R. China
| | - Fushan Li
- Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350116, P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, P. R. China
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Kim D, Yun T, An S, Lee CL. How to improve the structural stabilities of halide perovskite quantum dots: review of various strategies to enhance the structural stabilities of halide perovskite quantum dots. NANO CONVERGENCE 2024; 11:4. [PMID: 38279984 PMCID: PMC10821855 DOI: 10.1186/s40580-024-00412-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/13/2023] [Accepted: 01/08/2024] [Indexed: 01/29/2024]
Abstract
Halide perovskites have emerged as promising materials for various optoelectronic devices because of their excellent optical and electrical properties. In particular, halide perovskite quantum dots (PQDs) have garnered considerable attention as emissive materials for light-emitting diodes (LEDs) because of their higher color purities and photoluminescence quantum yields compared to conventional inorganic quantum dots (CdSe, ZnSe, ZnS, etc.). However, PQDs exhibit poor structural stabilities in response to external stimuli (moisture, heat, etc.) owing to their inherent ionic nature. This review presents recent research trends and insights into improving the structural stabilities of PQDs. In addition, the origins of the poor structural stabilities of PQDs and various methods to overcome this drawback are discussed. The structural degradation of PQDs is mainly caused by two mechanisms: (1) defect formation on the surface of the PQDs by ligand dissociation (i.e., detachment of weakly bound ligands from the surface of PQDs), and (2) vacancy formation by halide migration in the lattices of the PQDs due to the low migration energy of halide ions. The structural stabilities of PQDs can be improved through four methods: (1) ligand modification, (2) core-shell structure, (3) crosslinking, and (4) metal doping, all of which are presented in detail herein. This review provides a comprehensive understanding of the structural stabilities and opto-electrical properties of PQDs and is expected to contribute to future research on improving the device performance of perovskite quantum dot LEDs (PeLEDs).
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Affiliation(s)
- Dokyum Kim
- Advanced Photonics Research Institute (APRI), Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea
| | - Taesun Yun
- Advanced Photonics Research Institute (APRI), Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea
- Department of Physics, Research Institute of Physics and Chemistry, Jeonbuk National University, Jeonju, 54896, Republic of Korea
| | - Sangmin An
- Department of Physics, Research Institute of Physics and Chemistry, Jeonbuk National University, Jeonju, 54896, Republic of Korea
| | - Chang-Lyoul Lee
- Advanced Photonics Research Institute (APRI), Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea.
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Chen J, Jia D, Zhuang R, Hua Y, Zhang X. Rejuvenating Aged Perovskite Quantum Dots for Efficient Solar Cells. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2306854. [PMID: 37729595 DOI: 10.1002/adma.202306854] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/12/2023] [Revised: 09/08/2023] [Indexed: 09/22/2023]
Abstract
Perovskite quantum dots (PQDs) have emerged as one of the most promising candidates for next-generation solar cells owing to its remarkable optoelectronic properties and solution processability. However, the optoelectronic properties of PQDs suffer from severe degradation in storage due to the dynamically binding ligands, predominantly affecting photovoltaic applications. Herein, an in situ defect healing treatment (DHT) is reported to effectively rejuvenate aged PQDs. Systematically, experimental studies and theoretical calculations are performed to fundamentally understand the causes leading to the recovered optoelectronic properties of aged PQDs. The results reveal that the I3 - anions produced from tetra-n-octylammonium iodide and iodine could strongly anchor on the surface matrix defects of aged PQDs, substantially diminishing the nonradiative recombination of photogenerated charge carriers. Meanwhile, an DHT could also renovate the morphology of aged PQDs and thus improve the stacking orientation of PQD solids, substantially ameliorating charge carrier transport within PQD solids. Consequently, by using a DHT, the PQD solar cell (PQDSC) yields a high efficiency of up to 15.88%, which is comparable with the PQDSCs fabricated using fresh PQDs. Meanwhile, the stability of PQDSCs fabricated using the rejuvenated PQDs is also largely improved.
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Affiliation(s)
- Jingxuan Chen
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Donglin Jia
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Rongshan Zhuang
- Yunnan Key Laboratory for Micro/Nano Materials & Technology, School of Materials and Energy, Yunnan University, Kunming, 650091, China
| | - Yong Hua
- Yunnan Key Laboratory for Micro/Nano Materials & Technology, School of Materials and Energy, Yunnan University, Kunming, 650091, China
| | - Xiaoliang Zhang
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
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Lee GH, Kim K, Kim Y, Yang J, Choi MK. Recent Advances in Patterning Strategies for Full-Color Perovskite Light-Emitting Diodes. NANO-MICRO LETTERS 2023; 16:45. [PMID: 38060071 DOI: 10.1007/s40820-023-01254-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Accepted: 10/19/2023] [Indexed: 12/08/2023]
Abstract
Metal halide perovskites have emerged as promising light-emitting materials for next-generation displays owing to their remarkable material characteristics including broad color tunability, pure color emission with remarkably narrow bandwidths, high quantum yield, and solution processability. Despite recent advances have pushed the luminance efficiency of monochromic perovskite light-emitting diodes (PeLEDs) to their theoretical limits, their current fabrication using the spin-coating process poses limitations for fabrication of full-color displays. To integrate PeLEDs into full-color display panels, it is crucial to pattern red-green-blue (RGB) perovskite pixels, while mitigating issues such as cross-contamination and reductions in luminous efficiency. Herein, we present state-of-the-art patterning technologies for the development of full-color PeLEDs. First, we highlight recent advances in the development of efficient PeLEDs. Second, we discuss various patterning techniques of MPHs (i.e., photolithography, inkjet printing, electron beam lithography and laser-assisted lithography, electrohydrodynamic jet printing, thermal evaporation, and transfer printing) for fabrication of RGB pixelated displays. These patterning techniques can be classified into two distinct approaches: in situ crystallization patterning using perovskite precursors and patterning of colloidal perovskite nanocrystals. This review highlights advancements and limitations in patterning techniques for PeLEDs, paving the way for integrating PeLEDs into full-color panels.
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Affiliation(s)
- Gwang Heon Lee
- Graduate School of Semiconductor Materials and Devices Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Kiwook Kim
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea
| | - Yunho Kim
- Graduate School of Semiconductor Materials and Devices Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Jiwoong Yang
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea.
- Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea.
| | - Moon Kee Choi
- Graduate School of Semiconductor Materials and Devices Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul, 08826, Republic of Korea.
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Maeng S, Park SJ, Lee J, Lee H, Choi J, Kang JK, Cho H. Direct photocatalytic patterning of colloidal emissive nanomaterials. SCIENCE ADVANCES 2023; 9:eadi6950. [PMID: 37585523 PMCID: PMC10431700 DOI: 10.1126/sciadv.adi6950] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/14/2023] [Accepted: 07/17/2023] [Indexed: 08/18/2023]
Abstract
We present a universal direct photocatalytic patterning method that can completely preserve the optical properties of perovskite nanocrystals (PeNCs) and other emissive nanomaterials. Solubility change of PeNCs is achieved mainly by a photoinduced thiol-ene click reaction between specially tailored surface ligands and a dual-role photocatalytic reagent, pentaerythritol tetrakis(3-mercaptopropionate) (PTMP), where the thiol-ene reaction is enabled at a low light intensity dose (~ 30 millijoules per square centimeter) by the strong photocatalytic activity of PeNCs. The photochemical reaction mechanism was investigated using various analyses at each patterning step. The PTMP also acts as a defect passivation agent for the PeNCs and even enhances their photoluminescence quantum yield (by ~5%) and photostability. Multicolor patterns of cesium lead halide (CsPbX3)PeNCs were fabricated with high resolution (<1 micrometer). Our method is widely applicable to other classes of nanomaterials including colloidal cadmium selenide-based and indium phosphide-based quantum dots and light-emitting polymers; this generality provides a nondestructive and simple way to pattern various functional materials and devices.
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Affiliation(s)
| | | | - Jaehwan Lee
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291, Daehak-ro, Yuseong-gu, Daejeon, Republic of Korea
| | - Hyungdoh Lee
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291, Daehak-ro, Yuseong-gu, Daejeon, Republic of Korea
| | - Jonghui Choi
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291, Daehak-ro, Yuseong-gu, Daejeon, Republic of Korea
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Lin Q, Zhu Y, Wang Y, Li D, Zhao Y, Liu Y, Li F, Huang W. Flexible Quantum Dot Light-Emitting Device for Emerging Multifunctional and Smart Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2210385. [PMID: 36880739 DOI: 10.1002/adma.202210385] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/09/2022] [Revised: 02/13/2023] [Indexed: 06/18/2023]
Abstract
Quantum dot light-emitting diodes (QLEDs), owing to their exceptional performances in device efficiency, color purity/tunability in the visible region and solution-processing ability on various substrates, become a potential candidate for flexible and ultrathin electroluminescent (EL) lighting and display. Moreover, beyond the lighting and display, flexible QLEDs are enabled with endless possibilities in the era of the internet of things and artificial intelligence by acting as input/output ports in wearable integrated systems. Challenges remain in the development of flexible QLEDs with the goals for high performance, excellent flexibility/even stretchability, and emerging applications. In this paper, the recent developments of QLEDs including quantum dot materials, working mechanism, flexible/stretchable strategies and patterning strategies, and highlight its emerging multifunctional integrations and smart applications covering wearable optical medical devices, pressure-sensing EL devices, and neural smart EL devices, are reviewed. The remaining challenges are also summarized and an outlook on the future development of flexible QLEDs made. The review is expected to offer a systematic understanding and valuable inspiration for flexible QLEDs to simultaneously satisfy optoelectronic and flexible properties for emerging applications.
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Affiliation(s)
- Qinghong Lin
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, Fujian, 350117, P. R. China
| | - Yangbin Zhu
- School of Intelligent Manufacturing and Electronic Engineering, Wenzhou University of Technology, Wenzhou, 325035, P. R. China
| | - Yue Wang
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, Fujian, 350117, P. R. China
| | - Deli Li
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, Fujian, 350117, P. R. China
| | - Yi Zhao
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, Fujian, 350117, P. R. China
| | - Yang Liu
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, Fujian, 350117, P. R. China
| | - Fushan Li
- Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, P. R. China
| | - Wei Huang
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, Fujian, 350117, P. R. China
- Frontiers Science Center for Flexible Electronics (FSCFE), MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), Xi'an, 710072, P. R. China
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), Nanjing, 211816, P. R. China
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10
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Liang SY, Liu YF, Ji ZK, Wang SY, Xia H, Sun HB. High-Resolution Patterning of Perovskite Quantum Dots via Femtosecond Laser-Induced Forward Transfer. NANO LETTERS 2023; 23:3769-3774. [PMID: 37129232 DOI: 10.1021/acs.nanolett.3c00006] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
High-resolution patterning of perovskite quantum dots (PQDs) is of significant importance for satisfying various practical applications, including high-resolution displays and image sensing. However, due to the limitation of the instability of PQDs, the existing patterning strategy always involves chemical reagent treatment or mask contact that is not suitable for PQDs. Therefore, it is still a challenge to fabricate high-resolution full-color PQD arrays. Here, we present a femtosecond laser-induced forward transfer (FsLIFT) technology, which enables the programmable fabrication of high-resolution full-color PQD arrays and arbitrary micropatterns. The FsLIFT process integrates transfer, deposition, patterning, and alignment in one step without involving a mask and chemical reagent treatment, guaranteeing the preservation of the photophysical properties of PQDs. A full-color PQD array with a high resolution of 2 μm has been successfully achieved. We anticipate that our facile and flexible FsLIFT technology can facilitate the development of diverse practical applications based on patterned PQDs.
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Affiliation(s)
- Shu-Yu Liang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, People's Republic of China
| | - Yue-Feng Liu
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, People's Republic of China
| | - Zhi-Kun Ji
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, People's Republic of China
| | - Shen-Yuan Wang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, People's Republic of China
| | - Hong Xia
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, People's Republic of China
| | - Hong-Bo Sun
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing 100084, People's Republic of China
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11
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Surface regulation by bifunctional BODIPY to fabricate stable CsPbBr3 for multi-layered optical anti-counterfeiting. J Colloid Interface Sci 2023; 629:63-72. [DOI: 10.1016/j.jcis.2022.08.129] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/14/2022] [Revised: 08/10/2022] [Accepted: 08/19/2022] [Indexed: 11/20/2022]
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12
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Yang R, Zang S, Zhu Q, Xu G, Liu H. Polymerizable Surfactant Ligand for Stabilization and Film Formation of CsPbBr 3 Nanocrystals. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2022; 38:15253-15262. [PMID: 36448657 DOI: 10.1021/acs.langmuir.2c02349] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Surfactant ligands are important in the synthesis of inorganic perovskite nanocrystals (NCs), not only for stabilizing NCs but also for surface defect passivation. A new polymerizable surfactant ligand with a multidentate l-cysteine head, a long oleoyl tail, and a polymerizable styrenyl group (NOSVC) is designed for the post-synthesis treatment and stabilization of colloidal CsPbBr3 NCs in this work. 1H nuclear magnetic resonance and X-ray photoelectron spectroscopy analysis show that the l-cysteine head has strong interactions with the NCs. The absolute photoluminescence quantum yields of the colloidal NCs are increased from 45.1% of the pristine NCs stabilized with oleic acid/oleyl amine to 91.8% after NOSVC treatment. NOSVC-stabilized CsPbBr3 colloidal NCs show enhanced stabilities when exposed in polar solvents. The NOSVC-stabilized CsPbBr3 NCs in a solid film state allow for a photopolymerization to be carried out with the assistance of a photoinitiator. The polymerized films of NOSVC-treated NCs exhibit significantly enhanced stability against thermal radiation, ultraviolet irradiation, and humidity. We also fabricated self-healing polymer films incorporating NOSVC-treated CsPbBr3 NCs as a green filter for a white light-emitting diode device. The green light-emitting films are very stable in humid environments, revealing the great application potential of NOSVC-treated CsPbBr3 NCs in flexible display and lighting devices.
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Affiliation(s)
- Renci Yang
- Chinese Academy of Sciences (CAS) Key Laboratory of Soft Matter Chemistry, Department of Polymer Science and Engineering, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Shuoshuo Zang
- Chinese Academy of Sciences (CAS) Key Laboratory of Soft Matter Chemistry, Department of Polymer Science and Engineering, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Qinyi Zhu
- Chinese Academy of Sciences (CAS) Key Laboratory of Soft Matter Chemistry, Department of Polymer Science and Engineering, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Guoqing Xu
- Chinese Academy of Sciences (CAS) Key Laboratory of Soft Matter Chemistry, Department of Polymer Science and Engineering, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Hewen Liu
- Chinese Academy of Sciences (CAS) Key Laboratory of Soft Matter Chemistry, Department of Polymer Science and Engineering, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
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13
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Kwon JI, Park G, Lee GH, Jang JH, Sung NJ, Kim SY, Yoo J, Lee K, Ma H, Karl M, Shin TJ, Song MH, Yang J, Choi MK. Ultrahigh-resolution full-color perovskite nanocrystal patterning for ultrathin skin-attachable displays. SCIENCE ADVANCES 2022; 8:eadd0697. [PMID: 36288304 PMCID: PMC9604611 DOI: 10.1126/sciadv.add0697] [Citation(s) in RCA: 16] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/19/2022] [Accepted: 09/07/2022] [Indexed: 06/16/2023]
Abstract
High-definition red/green/blue (RGB) pixels and deformable form factors are essential for the next-generation advanced displays. Here, we present ultrahigh-resolution full-color perovskite nanocrystal (PeNC) patterning for ultrathin wearable displays. Double-layer transfer printing of the PeNC and organic charge transport layers is developed, which prevents internal cracking of the PeNC film during the transfer printing process. This results in RGB pixelated PeNC patterns of 2550 pixels per inch (PPI) and monochromic patterns of 33,000 line pairs per inch with 100% transfer yield. The perovskite light-emitting diodes (PeLEDs) with transfer-printed active layers exhibit outstanding electroluminescence characteristics with remarkable external quantum efficiencies (15.3, 14.8, and 2.5% for red, green, and blue, respectively), which are high compared to the printed PeLEDs reported to date. Furthermore, double-layer transfer printing enables the fabrication of ultrathin multicolor PeLEDs that can operate on curvilinear surfaces, including human skin, under various mechanical deformations. These results highlight that PeLEDs are promising for high-definition full-color wearable displays.
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Affiliation(s)
- Jong Ik Kwon
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Gyuri Park
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 42988, Republic of Korea
| | - Gwang Heon Lee
- Graduate School of Semiconductor Materials and Devices Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Jae Hong Jang
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Nak Jun Sung
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 42988, Republic of Korea
| | - Seo Young Kim
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 42988, Republic of Korea
| | - Jisu Yoo
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Kyunghoon Lee
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 42988, Republic of Korea
| | - Hyeonjong Ma
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 42988, Republic of Korea
| | - Minji Karl
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Tae Joo Shin
- Graduate School of Semiconductor Materials and Devices Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- UNIST Central Research Facilities, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Myoung Hoon Song
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Graduate School of Semiconductor Materials and Devices Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Jiwoong Yang
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 42988, Republic of Korea
- Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 42988, Republic of Korea
| | - Moon Kee Choi
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Graduate School of Semiconductor Materials and Devices Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
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14
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Feng X, Xu P, Liu J, Zhao X, Cao J, Liu J. Stable Core-Shell Structure Nanocrystals of Cs 4PbBr 6-Zn(moi) 2 Achieved by an In Situ Surface Reconstruction Strategy for Optical Anticounterfeiting. Inorg Chem 2022; 61:17590-17598. [PMID: 36272156 DOI: 10.1021/acs.inorgchem.2c02632] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Zero-dimensional Cs4PbBr6 nanocrystals (NCs) possess attractive photoluminescence (PL) properties and feature facile chemical synthesis, making them promising for application in luminescent materials. However, Cs4PbBr6 remains sensitive to polar solvents and thermal stimuli because of soft ionic nature of Cs4PbBr6 and dynamic behavior of surface ligands. Herein, a strategy controlled by an in situ surface coordination reaction is developed to fabricate stable NCs with a Cs4PbBr6-Zn(moi)2 core-shell structure. It was found that the Cs4PbBr6 surface regulated by the use of 2-mercaptoimidazole (called moi) and the coordination between the -NH group of moi and Zn2+ is critical for the formation of Cs4PbBr6-Zn(moi)2 core-shell NCs. Meanwhile, the thickness of the Zn(moi)2 shell can be facilely controlled by the growth time because of the solubility of moi and Zn(OAc)2·2H2O in ethyl acetate. Compared to bare Cs4PbBr6, Cs4PbBr6-Zn(moi)2 NCs exhibited highly improved polar solvent resistance and thermal stability. By combining the sensitivity of Cs4PbBr6 and the stability of Cs4PbBr6-Zn(moi)2, we used two NCs as PL security inks to fabricate optical anticounterfeiting labels. Thus, the disposable or reusable optical anticounterfeiting label is achieved by changing the external dual-stimuli. This work provides a novel strategy to enhance the stability of Cs4PbBr6 and develop its potential interest for application in anticounterfeiting technologies.
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Affiliation(s)
- Xiaoxia Feng
- Key Laboratory of Eco-Functional Polymer Materials of the Ministry of Education, Key Laboratory of Bioelectrochemistry and Environmental Analysis of Gansu Province, College of Chemistry and Chemical Engineering, Northwest Normal University, Lanzhou 730070, P. R. China
| | - Pengxiao Xu
- Key Laboratory of Eco-Functional Polymer Materials of the Ministry of Education, Key Laboratory of Bioelectrochemistry and Environmental Analysis of Gansu Province, College of Chemistry and Chemical Engineering, Northwest Normal University, Lanzhou 730070, P. R. China
| | - Jinli Liu
- Key Laboratory of Eco-Functional Polymer Materials of the Ministry of Education, Key Laboratory of Bioelectrochemistry and Environmental Analysis of Gansu Province, College of Chemistry and Chemical Engineering, Northwest Normal University, Lanzhou 730070, P. R. China
| | - Xiyue Zhao
- Key Laboratory of Eco-Functional Polymer Materials of the Ministry of Education, Key Laboratory of Bioelectrochemistry and Environmental Analysis of Gansu Province, College of Chemistry and Chemical Engineering, Northwest Normal University, Lanzhou 730070, P. R. China
| | - Jing Cao
- State Key Laboratory of Applied Organic Chemistry, Key Laboratory of Nonferrous Metal Chemistry and Resources Utilization of Gansu Province, College of Chemistry and Chemical Engineering, Lanzhou University, Lanzhou 730000, P. R. China
| | - Jiacheng Liu
- Key Laboratory of Eco-Functional Polymer Materials of the Ministry of Education, Key Laboratory of Bioelectrochemistry and Environmental Analysis of Gansu Province, College of Chemistry and Chemical Engineering, Northwest Normal University, Lanzhou 730070, P. R. China
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15
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Liu D, Weng K, Lu S, Li F, Abudukeremu H, Zhang L, Yang Y, Hou J, Qiu H, Fu Z, Luo X, Duan L, Zhang Y, Zhang H, Li J. Direct optical patterning of perovskite nanocrystals with ligand cross-linkers. SCIENCE ADVANCES 2022; 8:eabm8433. [PMID: 35294230 PMCID: PMC8926341 DOI: 10.1126/sciadv.abm8433] [Citation(s) in RCA: 32] [Impact Index Per Article: 16.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
Precise microscale patterning is a prerequisite to incorporate the emerging colloidal metal halide perovskite nanocrystals into advanced, integrated optoelectronic platforms for widespread technological applications. Current patterning methods suffer from some combination of limitations in patterning quality, versatility, and compatibility with the workflows of device fabrication. This work introduces the direct optical patterning of perovskite nanocrystals with ligand cross-linkers or DOPPLCER. The underlying, nonspecific cross-linking chemistry involved in DOPPLCER supports high-resolution, multicolored patterning of a broad scope of perovskite nanocrystals with their native ligands. Patterned nanocrystal films show photoluminescence (after postpatterning surface treatment), electroluminescence, and photoconductivity on par with those of conventional nonpatterned films. Prototype, pixelated light-emitting diodes show peak external quantum efficiency of 6.8% and luminance over 20,000 cd m-2. Both are among the highest for patterned perovskite nanocrystal devices. These results create new possibilities in the system-level integration of perovskite nanomaterials and advance their applications in various optoelectronic and photonic platforms.
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Affiliation(s)
- Dan Liu
- Key Laboratory of Chemical Biology and Traditional Chinese Medicine Research, Ministry of Education, College of Chemistry and Chemical Engineering, Hunan Normal University, Changsha 410081, China
- Department of Chemistry, Tsinghua University, Beijing 100084, China
- Center for BioAnalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry and Chemical Biology, Ministry of Education, Tsinghua University, Beijing 100084, China
| | - Kangkang Weng
- Department of Chemistry, Tsinghua University, Beijing 100084, China
- Center for BioAnalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry and Chemical Biology, Ministry of Education, Tsinghua University, Beijing 100084, China
| | - Shaoyong Lu
- Department of Chemistry, Tsinghua University, Beijing 100084, China
| | - Fu Li
- Department of Chemistry, Tsinghua University, Beijing 100084, China
| | | | - Lipeng Zhang
- Department of Chemistry, Tsinghua University, Beijing 100084, China
- Center for BioAnalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry and Chemical Biology, Ministry of Education, Tsinghua University, Beijing 100084, China
| | - Yuchen Yang
- Department of Chemistry, Tsinghua University, Beijing 100084, China
- Center for BioAnalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry and Chemical Biology, Ministry of Education, Tsinghua University, Beijing 100084, China
| | - Junyang Hou
- Department of Chemistry, Tsinghua University, Beijing 100084, China
| | - Hengwei Qiu
- Department of Chemistry, Tsinghua University, Beijing 100084, China
| | - Zhong Fu
- Department of Chemistry, Tsinghua University, Beijing 100084, China
| | - Xiyu Luo
- Department of Chemistry, Tsinghua University, Beijing 100084, China
- Key Laboratory of Organic Optoelectronics and Molecular Engineering, Ministry of Education, Tsinghua University, Beijing 100084, China
| | - Lian Duan
- Department of Chemistry, Tsinghua University, Beijing 100084, China
- Key Laboratory of Organic Optoelectronics and Molecular Engineering, Ministry of Education, Tsinghua University, Beijing 100084, China
| | - Youyu Zhang
- Key Laboratory of Chemical Biology and Traditional Chinese Medicine Research, Ministry of Education, College of Chemistry and Chemical Engineering, Hunan Normal University, Changsha 410081, China
- Corresponding author. (Y.Z.); (H.Z.)
| | - Hao Zhang
- Department of Chemistry, Tsinghua University, Beijing 100084, China
- Center for BioAnalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry and Chemical Biology, Ministry of Education, Tsinghua University, Beijing 100084, China
- Corresponding author. (Y.Z.); (H.Z.)
| | - Jinghong Li
- Department of Chemistry, Tsinghua University, Beijing 100084, China
- Center for BioAnalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry and Chemical Biology, Ministry of Education, Tsinghua University, Beijing 100084, China
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16
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Lee H, Trinh CK, So MG, Lee CL. Sequential structural degradation of red perovskite quantum dots and its prevention by introducing iodide at a stable gradient concentration into the core-shell red perovskite quantum dots. NANOSCALE 2022; 14:3425-3440. [PMID: 35029623 DOI: 10.1039/d1nr07152a] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Perovskite quantum dots (QDs) have been extensively studied as emissive materials for next-generation optoelectronics due to their outstanding optical properties; however, their structural instabilities, specifically those of red perovskite QDs, are critical obstacles in realizing operationally reliable perovskite QD-based optoelectronic devices. Accordingly, herein, we investigated the sequential degradation mechanism of red perovskite QDs upon their exposure to an electric field. Via electrical and chemical characterization, we demonstrated that degradation occurred in the following order: anion-defect-assisted halide migration, cation-defect-assisted migration of I-/Cs+ ions, defective gradient I ion distribution, structural distortion, and ion transport/I2 vaporization with defect proliferation. Among these steps, the defective gradient I ion distribution is the key process in the structural degradation of perovskite QDs. Based on our findings, we designed perovskite/SiO2 core-shell QDs with stable gradient I concentrations. Most notably, the operational stabilities of perovskite QD-light-emitting diodes (PeLEDs) fabricated using the perovskite/SiO2 core-shell QDs were approximately 5000 times those of the PeLEDs constructed using pristine perovskite QDs.
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Affiliation(s)
- Hanleem Lee
- Advanced Photonics Research Institute (APRI), Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea.
- Department of Chemistry, Myongji University, 116 Myongji Ro, Yongin, Gyeonggi-do, 17058, Republic of Korea
- The Natural Science Research Institute, Myongji University, 116 Myongji Ro, Yongin, Gyeonggi-do, 17058, South Korea
| | - Cuc Kim Trinh
- Advanced Photonics Research Institute (APRI), Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea.
| | - Mo Geun So
- Advanced Photonics Research Institute (APRI), Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea.
| | - Chang-Lyoul Lee
- Advanced Photonics Research Institute (APRI), Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea.
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17
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Zhu X, Dai SW, Lai YL, Dou Y, Wang M, Ho JS, Chang YA, Chuang YT, Lin HW, Hu B. Packing-Shape Effects of Optical Properties in Amplified Spontaneous Emission through Dynamics of Orbit-Orbit Polarization Interaction in Hybrid Perovskite Quantum Dots Based on Self-Assembly. J Phys Chem Lett 2021; 12:11894-11901. [PMID: 34878274 DOI: 10.1021/acs.jpclett.1c02978] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
This paper reports packing-shape effects of amplified spontaneous emission (ASE) through orbital polarization dynamics between light-emitting excitons by stacking perovskite (MAPbBr3) quantum dots (QDs sized between 10 nm and 14 nm) into rod-like and diamond-like aggregates. The rod-like packing shows a prolonged photoluminescence (PL) lifetime (184 ns) with 3 nm red-shifted peak (525 nm) as compared to the diamond-like packing (PL peak, 522 nm; lifetime, 19 ns). This indicates that the rod-like packing forms a stronger interaction between QDs with reduced surface-charged defects, leading to surface-to-inside property-tuning capability with an ASE. Interestingly, the ASE enabled by rod-like packing shows an orbit-orbit polarization interaction between light-emitting excitons, identified by linearly/circularly polarized pumping conditions. More importantly, the polarization dynamics is extended to the order of nanoseconds in the rod-like assembly, determined by the observation that within the ASE lifetime (2.54 ns) the rotating pumping beam polarization direction largely affects the coherent interaction between light-emitting excitons.
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Affiliation(s)
- Xixiang Zhu
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Shu-Wen Dai
- Department of Materials Science and Engineering, National Tsing Hua University, No. 101, Sec. 2, Kuang-Fu Road, Hsinchu 30013, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, No. 101, Sec. 2, Kuang-Fu Road, Hsinchu 30013, Taiwan
| | - Ying-Lin Lai
- Department of Materials Science and Engineering, National Tsing Hua University, No. 101, Sec. 2, Kuang-Fu Road, Hsinchu 30013, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, No. 101, Sec. 2, Kuang-Fu Road, Hsinchu 30013, Taiwan
| | - Yixuan Dou
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Miaosheng Wang
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Jian-Syun Ho
- Department of Materials Science and Engineering, National Tsing Hua University, No. 101, Sec. 2, Kuang-Fu Road, Hsinchu 30013, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, No. 101, Sec. 2, Kuang-Fu Road, Hsinchu 30013, Taiwan
| | - Yi-An Chang
- Department of Materials Science and Engineering, National Tsing Hua University, No. 101, Sec. 2, Kuang-Fu Road, Hsinchu 30013, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, No. 101, Sec. 2, Kuang-Fu Road, Hsinchu 30013, Taiwan
| | - Yung-Tang Chuang
- Department of Materials Science and Engineering, National Tsing Hua University, No. 101, Sec. 2, Kuang-Fu Road, Hsinchu 30013, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, No. 101, Sec. 2, Kuang-Fu Road, Hsinchu 30013, Taiwan
| | - Hao-Wu Lin
- Department of Materials Science and Engineering, National Tsing Hua University, No. 101, Sec. 2, Kuang-Fu Road, Hsinchu 30013, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, No. 101, Sec. 2, Kuang-Fu Road, Hsinchu 30013, Taiwan
| | - Bin Hu
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
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Oh BM, Jeong Y, Zheng J, Cho NY, Song M, Choi JW, Kim JH. Simple one-pot synthesis and high-resolution patterning of perovskite quantum dots using a photocurable ligand. Chem Commun (Camb) 2021; 57:12824-12827. [PMID: 34786577 DOI: 10.1039/d1cc05892d] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
In this study, we report a UV-light-curable azide ligand (AzL) for the micro-patterning of PeQDs. AzL can be attached to the surface of the PeQDs during their synthesis without additional ligand exchange. Using the AzL-grafted CsPbBr3 PeQDs, high-color-purity 240 × 240 μm2 square-shaped patterns were successfully fabricated using UV light irradiation, which corresponds to a resolution of >50 pixels per inch.
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Affiliation(s)
- Byeong M Oh
- Department of Molecular Science and Technology, Ajou University, Suwon, 16499, Republic of Korea.
| | - Yongcheol Jeong
- Department of Energy & Electronic Materials, Korea Institute of Materials Science (KIMS), 797 Changwon-daero, Sungsan-Gu, Changwon, Gyeongsangnam-do, 51508, Republic of Korea.
| | - Jian Zheng
- Department of Molecular Science and Technology, Ajou University, Suwon, 16499, Republic of Korea. .,School of Chemistry and Chemical Engineering, Lingnan Normal University, Zhanjiang, 524048, People's Republic of China
| | - Na Young Cho
- Department of Molecular Science and Technology, Ajou University, Suwon, 16499, Republic of Korea.
| | - Myungkwan Song
- Department of Energy & Electronic Materials, Korea Institute of Materials Science (KIMS), 797 Changwon-daero, Sungsan-Gu, Changwon, Gyeongsangnam-do, 51508, Republic of Korea.
| | - Jin Woo Choi
- Department of Energy & Electronic Materials, Korea Institute of Materials Science (KIMS), 797 Changwon-daero, Sungsan-Gu, Changwon, Gyeongsangnam-do, 51508, Republic of Korea.
| | - Jong H Kim
- Department of Molecular Science and Technology, Ajou University, Suwon, 16499, Republic of Korea.
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19
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Pan JA, Ondry JC, Talapin DV. Direct Optical Lithography of CsPbX 3 Nanocrystals via Photoinduced Ligand Cleavage with Postpatterning Chemical Modification and Electronic Coupling. NANO LETTERS 2021; 21:7609-7616. [PMID: 34478618 DOI: 10.1021/acs.nanolett.1c02249] [Citation(s) in RCA: 21] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Microscale patterning of solution-processed nanomaterials is important for integration in functional devices. Colloidal lead halide perovskite (LHP) nanocrystals (NCs) can be particularly challenging to pattern due to their incompatibility with polar solvents and lability of surface ligands. Here, we introduce a direct photopatterning approach for LHP NCs through the binding and subsequent cleavage of a photosensitive oxime sulfonate ester (-C═N-OSOO-). The photosensitizer binds to the NCs through its sulfonate group and is cleaved at the N-O bond during photoirradiation with 405 nm light. This bond cleavage decreases the solubility of the NCs, which allows patterns to emerge upon development with toluene. Postpatterning ligand exchange results in photoluminescence quantum yields of up to 79%, while anion exchange provides tunability in the emission wavelength. The patterned NC films show photoconductive behavior, demonstrating that good electrical contact between the NCs can be established.
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Affiliation(s)
- Jia-Ahn Pan
- Department of Chemistry, James Franck Institute, and Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
| | - Justin C Ondry
- Department of Chemistry, James Franck Institute, and Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
| | - Dmitri V Talapin
- Department of Chemistry, James Franck Institute, and Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
- Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, United States
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20
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Liu Y, Zhu Y, Hu H, Guo T, Li F. Quantum Dot Self-Assembly Deposition in Physically Confined Microscale Space by Using an Inkjet Printing Technique. J Phys Chem Lett 2021; 12:8605-8613. [PMID: 34469171 DOI: 10.1021/acs.jpclett.1c02470] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Inkjet printing technique is susceptible to form coffer-ring patterns and inhomogeneous films owing to the evaporation and its accompanying hydrodynamics of microscale quantum dot droplet. Pioneer efforts are usually confined to two-dimensional flat substrates and inks with mixed solvents/additives. Herein we demonstrate that physically confined space offers an additional parameter in tailoring such processes of droplets and the following quantum-dot self-assembly deposition, without extra modification of quantum dots or solvent chemistry. Owing to the boundary of physically confined space, two three-phase border lines in both the bottom center (horizontal direction) and the barrier of the bank substrate (vertical direction) arise, inducing dual capillary flows and Marangoni backflows. The evaporation, fluid flow, and film-forming process in physically confined space are studied by introducing well-prepared single-solvent quantum dots inks. The systematical analysis offers valuable instructions including ink preparation, surface modification, and postprocessing evaporation technique for inkjet-printed patterning applications, especially for pixelated display, polychrome patterning, and sensor array.
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Affiliation(s)
- Yang Liu
- Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350116, People's Republic of China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, People's Republic of China
| | - Yangbin Zhu
- Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350116, People's Republic of China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, People's Republic of China
| | - Hailong Hu
- Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350116, People's Republic of China
| | - Tailiang Guo
- Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350116, People's Republic of China
| | - Fushan Li
- Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350116, People's Republic of China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, People's Republic of China
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21
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Trinh CK, Lee H, So MG, Lee CL. Synthesis of Chemically Stable Ultrathin SiO 2-Coated Core-Shell Perovskite QDs via Modulation of Ligand Binding Energy for All-Solution-Processed Light-Emitting Diodes. ACS APPLIED MATERIALS & INTERFACES 2021; 13:29798-29808. [PMID: 34105935 DOI: 10.1021/acsami.1c06097] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Recently, perovskite quantum dots (QDs) have attracted intensive interest due to their outstanding optical properties, but their extremely poor chemical stability hinders the development of the high-performance perovskite QD-based light-emitting diodes (PeLEDs). In this study, chemically stable SiO2-coated core-shell perovskite QDs are prepared to fabricate all-solution-processed PeLEDs. When the SiO2 shell thickness increases, the chemical stability of perovskite QDs is dramatically improved, while the charge injection efficiency is significantly decreased, which becomes the biggest obstacle for PeLED applications. Thus, controlling the SiO2 thickness is essential to obtain core-shell perovskite QDs optimal for PeLEDs in an aspect of chemical and optoelectrical properties. The 3-aminopropyl-triethoxysilane (APTES)/oleylamine (OAm) volume ratio is found to be a critical factor for obtaining an ultrathin SiO2 shell. Optimization of the APTES/OAm ratio affords A-site-doped CsPbBr3 QDs with an ultrathin SiO2 shell (A-CsPbBr3@SiO2 QDs) that exhibit longer radiative lifetimes and smaller shallow trap fraction than those without A-site doping, resulting in a higher photoluminescence quantum yield. A-CsPbBr3@SiO2 QDs also demonstrate long-term superior chemical stability in polar solvents without loss of optical properties due to passivation by the SiO2 shell and less defects via A-site doping. Consequently, all-solution-processed PeLED is successfully fabricated under ambient conditions, facilitating perovskite QD utilization in low-cost, large-area, flexible next-generation displays.
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Affiliation(s)
- Cuc Kim Trinh
- Advanced Photonics Research Institute (APRI), Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Hanleem Lee
- Advanced Photonics Research Institute (APRI), Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Mo Geun So
- Advanced Photonics Research Institute (APRI), Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Chang-Lyoul Lee
- Advanced Photonics Research Institute (APRI), Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
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