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Wang Y, Nie S, Liu S, Hu Y, Fu J, Ming J, Liu J, Li Y, He X, Wang L, Li W, Yi M, Ling H, Xie L, Huang W. Dual-Adaptive Heterojunction Synaptic Transistors for Efficient Machine Vision in Harsh Lighting Conditions. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2404160. [PMID: 38815276 DOI: 10.1002/adma.202404160] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/21/2024] [Revised: 05/22/2024] [Indexed: 06/01/2024]
Abstract
Photoadaptive synaptic devices enable in-sensor processing of complex illumination scenes, while second-order adaptive synaptic plasticity improves learning efficiency by modifying the learning rate in a given environment. The integration of above adaptations in one phototransistor device will provide opportunities for developing high-efficient machine vision system. Here, a dually adaptable organic heterojunction transistor as a working unit in the system, which facilitates precise contrast enhancement and improves convergence rate under harsh lighting conditions, is reported. The photoadaptive threshold sliding originates from the bidirectional photoconductivity caused by the light intensity-dependent photogating effect. Metaplasticity is successfully implemented owing to the combination of ambipolar behavior and charge trapping effect. By utilizing the transistor array in a machine vision system, the details and edges can be highlighted in the 0.4% low-contrast images, and a high recognition accuracy of 93.8% with a significantly promoted convergence rate by about 5 times are also achieved. These results open a strategy to fully implement metaplasticity in optoelectronic devices and suggest their vision processing applications in complex lighting scenes.
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Affiliation(s)
- Yiru Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Shimiao Nie
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Shanshuo Liu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Yunfei Hu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Jingwei Fu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Jianyu Ming
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Jing Liu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Yueqing Li
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Xiang He
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Le Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Wen Li
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Mingdong Yi
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Haifeng Ling
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Linghai Xie
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Wei Huang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
- Frontiers Science Center for Flexible Electronics (FSCFE), MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), Xi'an, 710072, China
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Guo L, Sun H, Min L, Wang M, Cao F, Li L. Two-Terminal Perovskite Optoelectronic Synapse for Rapid Trained Neuromorphic Computation with High Accuracy. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2402253. [PMID: 38553842 DOI: 10.1002/adma.202402253] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/12/2024] [Revised: 03/16/2024] [Indexed: 04/09/2024]
Abstract
Emerging neural morphological vision sensors inspired by biological systems that integrate image perception, memory, and information computing are expected to transform the landscape of machine vision and artificial intelligence. However, stable and reconfigurable light-induced synaptic behavior always relies on independent gateport modulation. Despite its potential, the limitations of uncontrollable defects and ionic characteristics have led to simpler, smaller, and more integration-friendly two-terminal devices being used as sidelines. In this work, the synergy between ion migration barriers and readout voltage is proven to be the key to realizing stable, reconfigurable, and precisely controllable postsynaptic current in two-terminal devices. Following the same mechanism, optical and electrical signal synchronous triggering is proposed to serve as a preprocessing method to achieve a recognition accuracy of 96.5%. Impressively, the gradual ion accumulation during the training process induces photocurrent evolution, serving as a reference for the dynamic learning rate and boosting accuracy to 97.8% in just 10 epochs. The PSC modulation potential under short optical pulse of 20 ns is also revealed. This optoelectronic device with perception, memory, and computation capabilities can promote the development of new devices for future photonic neural morphological circuits and artificial vision.
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Affiliation(s)
- Linqi Guo
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
| | - Haoxuan Sun
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
| | - Liangliang Min
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
| | - Meng Wang
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
| | - Fengren Cao
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
| | - Liang Li
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
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Bednarkiewicz A, Szalkowski M, Majak M, Korczak Z, Misiak M, Maćkowski S. All-Optical Data Processing with Photon-Avalanching Nanocrystalline Photonic Synapse. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2304390. [PMID: 37572370 DOI: 10.1002/adma.202304390] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/10/2023] [Revised: 08/01/2023] [Indexed: 08/14/2023]
Abstract
Data processing and storage in electronic devices are typically performed as a sequence of elementary binary operations. Alternative approaches, such as neuromorphic or reservoir computing, are rapidly gaining interest where data processing is relatively slow, but can be performed in a more comprehensive way or massively in parallel, like in neuronal circuits. Here, time-domain all-optical information processing capabilities of photon-avalanching (PA) nanoparticles at room temperature are discovered. Demonstrated functionality resembles properties found in neuronal synapses, such as: paired-pulse facilitation and short-term internal memory, in situ plasticity, multiple inputs processing, and all-or-nothing threshold response. The PA-memory-like behavior shows capability of machine-learning-algorithm-free feature extraction and further recognition of 2D patterns with simple 2 input artificial neural network. Additionally, high nonlinearity of luminescence intensity in response to photoexcitation mimics and enhances spike-timing-dependent plasticity that is coherent in nature with the way a sound source is localized in animal neuronal circuits. Not only are yet unexplored fundamental properties of photon-avalanche luminescence kinetics studied, but this approach, combined with recent achievements in photonics, light confinement and guiding, promises all-optical data processing, control, adaptive responsivity, and storage on photonic chips.
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Affiliation(s)
- Artur Bednarkiewicz
- Institute of Low Temperature and Structure Research, Polish Academy of Sciences, ul. Okólna 2, Wroclaw, 50-422, Poland
| | - Marcin Szalkowski
- Institute of Low Temperature and Structure Research, Polish Academy of Sciences, ul. Okólna 2, Wroclaw, 50-422, Poland
- Nanophotonics Group, Institute of Physics, Faculty of Physics, Astronomy and Informatics, Nicolaus Copernicus University in Toruń, 87-100, Toruń, ul. Grudziądzka 5, Poland
| | - Martyna Majak
- Institute of Low Temperature and Structure Research, Polish Academy of Sciences, ul. Okólna 2, Wroclaw, 50-422, Poland
| | - Zuzanna Korczak
- Institute of Low Temperature and Structure Research, Polish Academy of Sciences, ul. Okólna 2, Wroclaw, 50-422, Poland
| | - Małgorzata Misiak
- Institute of Low Temperature and Structure Research, Polish Academy of Sciences, ul. Okólna 2, Wroclaw, 50-422, Poland
| | - Sebastian Maćkowski
- Nanophotonics Group, Institute of Physics, Faculty of Physics, Astronomy and Informatics, Nicolaus Copernicus University in Toruń, 87-100, Toruń, ul. Grudziądzka 5, Poland
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Yang S, Kim T, Kim S, Chung D, Kim TH, Lee JK, Kim S, Ismail M, Mahata C, Kim S, Cho S. Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems. NANOSCALE 2023; 15:13239-13251. [PMID: 37525621 DOI: 10.1039/d3nr01930f] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/02/2023]
Abstract
Although vertical configurations for high-density storage require challenging process steps, such as etching high aspect ratios and atomic layer deposition (ALD), they are more affordable with a relatively simple lithography process and have been employed in many studies. Herein, the potential of memristors with CMOS-compatible 3D vertical stacked structures of Pt/Ti/HfOx/TiN-NCs/HfOx/TiN is examined for use in neuromorphic systems. The electrical characteristics (including I-V properties, retention, and endurance) were investigated for both planar single cells and vertical resistive random-access memory (VRRAM) cells at each layer, demonstrating their outstanding non-volatile memory capabilities. In addition, various synaptic functions (including potentiation and depression) under different pulse schemes, excitatory postsynaptic current (EPSC), and spike-timing-dependent plasticity (STDP) were investigated. In pattern recognition simulations, an improved recognition rate was achieved by the linearly changing conductance, which was enhanced by the incremental pulse scheme. The achieved results demonstrated the feasibility of employing VRRAM with TiN nanocrystals in neuromorphic systems that resemble the human brain.
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Affiliation(s)
- Seyeong Yang
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea.
| | - Taegyun Kim
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea.
| | - Sunghun Kim
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea.
| | - Daewon Chung
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea.
| | - Tae-Hyeon Kim
- School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Jung Kyu Lee
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea.
| | - Sungjoon Kim
- Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, South Korea
| | - Muhammad Ismail
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea.
| | - Chandreswar Mahata
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea.
| | - Sungjun Kim
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea.
| | - Seongjae Cho
- Department of Electronic and Electrical Engineering, Ewha Womans University, Seoul 03760, South Korea.
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Huang J, Yang S, Tang X, Yang L, Chen W, Chen Z, Li X, Zeng Z, Tang Z, Gui X. Flexible, Transparent, and Wafer-Scale Artificial Synapse Array Based on TiO x /Ti 3 C 2 T x Film for Neuromorphic Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2303737. [PMID: 37339620 DOI: 10.1002/adma.202303737] [Citation(s) in RCA: 10] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/21/2023] [Revised: 06/08/2023] [Indexed: 06/22/2023]
Abstract
A high-density neuromorphic computing memristor array based on 2D materials paves the way for next-generation information-processing components and in-memory computing systems. However, the traditional 2D-materials-based memristor devices suffer from poor flexibility and opacity, which hinders the application of memristors in flexible electronics. Here, a flexible artificial synapse array based on TiOx /Ti3 C2 Tx film is fabricated by a convenient and energy-efficient solution-processing technique, which realizes high transmittance (≈90%) and oxidation resistance (>30 days). The TiOx /Ti3 C2 Tx memristor shows low device-to-device variability, long memory retention and endurance, a high ON/OFF ratio, and fundamental synaptic behavior. Furthermore, satisfactory flexibility (R = 1.0 mm) and mechanical endurance (104 bending cycles) of the TiOx /Ti3 C2 Tx memristor are achieved, which is superior to other film memristors prepared by chemical vapor deposition. In addition, high-precision (>96.44%) MNIST handwritten digits recognition classification simulation indicates that the TiOx /Ti3 C2 Tx artificial synapse array holds promise for future neuromorphic computing applications, and provides excellent high-density neuron circuits for new flexible intelligent electronic equipment.
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Affiliation(s)
- Junhua Huang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China
| | - Shaodian Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China
| | - Xin Tang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China
| | - Leilei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China
- Department of Physics, Guangxi Minzu University, Nanning, 530006, China
| | - Wenjun Chen
- School of Electronic Information Engineering, Foshan University, Foshan, 528000, P. R. China
| | - Zibo Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China
| | - Xinming Li
- Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, School of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou, 510006, China
| | - Zhiping Zeng
- School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, 510275, China
| | - Zikang Tang
- Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau, 999078, China
| | - Xuchun Gui
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China
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Yan Y, Yu N, Yu Z, Su Y, Chen J, Xiang T, Han Y, Wang J. Optoelectronic Synaptic Memtransistor Based on 2D SnSe/MoS 2 van der Waals Heterostructure under UV-Ozone Treatment. SMALL METHODS 2023; 7:e2201679. [PMID: 36929317 DOI: 10.1002/smtd.202201679] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/19/2022] [Revised: 02/23/2023] [Indexed: 06/09/2023]
Abstract
Memristive switching devices with electrically and optically invoked synaptic behaviors show great promise in constructing an artificial biological visual system. Through rational design and integration, 2D materials and their van der Waals (vdW) heterostructures can be applied to realize multifunctional optoelectronic devices. Here, a multifunctional optoelectronic synaptic memtransistor based on a SnSe/MoS2 vdW p-n heterojunction to simulate the human biological visual system is reported. By employing simple mild UV-ozone treatment, the device exhibits reversible resistive switching (RS) behavior with switching ratio up to 103 . The retina-like selective response to different input light wavelengths is activated, as well as programmable multilevel resistance states and long-term synaptic plasticity. Moreover, memory and logic functions analogous to those found in the visual cortex of the brain are performed by controlling the optical and electrical input signals. This work proposes a feasible strategy to modulate RS in vdW heterostructures for memristive devices, which show significant potential for neuromorphic processing.
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Affiliation(s)
- Yuling Yan
- School of Science, Wuhan University of Technology, Wuhan, 430070, China
| | - Niannian Yu
- School of Science, Wuhan University of Technology, Wuhan, 430070, China
| | - Ziyan Yu
- School of Science, Wuhan University of Technology, Wuhan, 430070, China
| | - Yupeng Su
- School of Science, Wuhan University of Technology, Wuhan, 430070, China
| | - Jiawei Chen
- School of Science, Wuhan University of Technology, Wuhan, 430070, China
| | - Tao Xiang
- School of Science, Wuhan University of Technology, Wuhan, 430070, China
| | - Yuenan Han
- School of Science, Wuhan University of Technology, Wuhan, 430070, China
| | - Jiafu Wang
- School of Science, Wuhan University of Technology, Wuhan, 430070, China
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Rao TS, Kundu S, Bannur B, George SJ, Kulkarni GU. Emulating Ebbinghaus forgetting behavior in a neuromorphic device based on 1D supramolecular nanofibres. NANOSCALE 2023; 15:7450-7459. [PMID: 37013963 DOI: 10.1039/d3nr00195d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Mimicking synaptic functions in hardware devices is a crucial step in realizing brain-like computing beyond the von Neumann architecture. 1D nanomaterials with spatial extensions of a few μm, similar to biological neurons, gain significance given the ease of electrical transport as well as directionality. Herein, we report a two-terminal optically active device based on 1D supramolecular nanofibres consisting of CS (coronene tetracarboxylate) and DMV (dimethyl viologen) forming alternating D-A (donor-acceptor) pairs, emulating synaptic functions such as the STP (short-term potentiation), LTP (long-term potentiation), PPF (paired-pulse facilitation), STDP (spike-time dependent plasticity) and learning-relearning behaviors. In addition, an extensive study on the less explored Ebbinghaus forgetting curve has been carried out. The supramolecular nanofibres being light sensitive, the potential of the device as a visual system is demonstrated using a 3 × 3 pixel array.
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Affiliation(s)
- Tejaswini S Rao
- Chemistry & Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur P. O., Bangalore-560064, India.
| | - Suman Kundu
- Centre for Nano and Soft Matter Sciences, Shivanapura, Bangalore-562162, India
| | - Bharath Bannur
- Chemistry & Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur P. O., Bangalore-560064, India.
| | - Subi J George
- Supramolecular Chemistry Laboratory, New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore-560064, India
| | - Giridhar U Kulkarni
- Chemistry & Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur P. O., Bangalore-560064, India.
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Liu J, Yin J, Yuan H, Zhao Y, Luo S, Li F. 1O2-activatable Eu3+-afterglow nanoprobe for highly sensitive detection of porphyria in whole blood. J RARE EARTH 2022. [DOI: 10.1016/j.jre.2022.05.011] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/20/2023]
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10
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Wang Z, Xiao W, Yang H, Zhang S, Zhang Y, Sun K, Wang T, Fu Y, Wang Q, Zhang J, Hasegawa T, He D. Resistive Switching Memristor: On the Direct Observation of Physical Nature of Parameter Variability. ACS APPLIED MATERIALS & INTERFACES 2022; 14:1557-1567. [PMID: 34957821 DOI: 10.1021/acsami.1c19364] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Ion-based memristive switching has attracted widespread attention from industries owing to its outstanding advantages in storage and neuromorphic computing. Major issues for achieving brain-inspired computation of highly functional memory in redox-based ion devices are relatively large variability in their operating parameters and limited cycling endurance. In some devices, volatile and nonvolatile operations often replace each other without changing operating conditions. To address these issues, it is important to observe directly what is happening in repeated operations. Herein, we use a planar device that enables direct capturing of microscopic behaviors in the nucleation and growth of metal whiskers under repeated switching to verify the microscopic origin of the large parameter variability. We report direct observations that reveal the physical origin for the large cycle-to-cycle and device-to-device variability in memristive switching, which was achieved using planar polymer atomic switches with a gap >1 μm. We find that the deposition location of metal atoms is closely related to the crystallinity of the ion transport layer (solid polymer electrolyte, SPE). The filament variability (shape, position, quantity, etc.) during different cycles and devices is indeed the main reason for the observed variability in the operating characteristics. The results shed unique light on the complexity of the operation of the ion device, that is, the evolution of the dielectric layer and metal filament must be considered.
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Affiliation(s)
- Zheng Wang
- School of Materials and Energy, Lanzhou University, Lanzhou 730000, P. R. China
| | - Wei Xiao
- School of Materials and Energy, Lanzhou University, Lanzhou 730000, P. R. China
| | - Huiyong Yang
- School of Materials and Energy, Lanzhou University, Lanzhou 730000, P. R. China
| | - Shengjie Zhang
- School of Materials and Energy, Lanzhou University, Lanzhou 730000, P. R. China
| | - Yukun Zhang
- School of Materials and Energy, Lanzhou University, Lanzhou 730000, P. R. China
| | - Kai Sun
- School of Materials and Energy, Lanzhou University, Lanzhou 730000, P. R. China
| | - Ting Wang
- School of Materials and Energy, Lanzhou University, Lanzhou 730000, P. R. China
| | - Yujun Fu
- School of Materials and Energy, Lanzhou University, Lanzhou 730000, P. R. China
| | - Qi Wang
- School of Materials and Energy, Lanzhou University, Lanzhou 730000, P. R. China
| | - Junyan Zhang
- State Key Laboratory of Solid Lubrication Lanzhou Institute of Chemical Physics Chinese Academy of Sciences, Lanzhou 730000 China
| | - Tsuyoshi Hasegawa
- Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555 Japan
| | - Deyan He
- School of Materials and Energy, Lanzhou University, Lanzhou 730000, P. R. China
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