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Gautam C, Thakurta B, Pal M, Ghosh AK, Giri A. Wafer scale growth of single crystal two-dimensional van der Waals materials. NANOSCALE 2024; 16:5941-5959. [PMID: 38445855 DOI: 10.1039/d3nr06678a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/07/2024]
Abstract
Two-dimensional (2D) van der Waals (vdW) materials, including graphene, hexagonal boron nitride (hBN), and metal dichalcogenides (MCs), form the basis of modern electronics and optoelectronics due to their unique electronic structure, chemical activity, and mechanical strength. Despite many proof-of-concept demonstrations so far, to fully realize their large-scale practical applications, especially in devices, wafer-scale single crystal atomically thin highly uniform films are indispensable. In this minireview, we present an overview on the strategies and highlight recent significant advances toward the synthesis of wafer-scale single crystal graphene, hBN, and MC 2D thin films. Currently, there are five distinct routes to synthesize wafer-scale single crystal 2D vdW thin films: (i) nucleation-controlled growth by suppressing the nucleation density, (ii) unidirectional alignment of multiple epitaxial nuclei and their seamless coalescence, (iii) self-collimation of randomly oriented grains on a molten metal, (iv) surface diffusion and epitaxial self-planarization and (v) seed-mediated 2D vertical epitaxy. Finally, the challenges that need to be addressed in future studies have also been described.
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Affiliation(s)
- Chetna Gautam
- Department of Physics, Institute of Science, Banaras Hindu University, Varanasi, UP - 221005, India.
| | - Baishali Thakurta
- Department of Chemistry, Institute of Science, Banaras Hindu University, Varanasi, UP - 221005, India
| | - Monalisa Pal
- Department of Chemistry, Institute of Science, Banaras Hindu University, Varanasi, UP - 221005, India
| | - Anup Kumar Ghosh
- Department of Physics, Institute of Science, Banaras Hindu University, Varanasi, UP - 221005, India.
| | - Anupam Giri
- Department of Chemistry, Faculty of Science, University of Allahabad, Prayagraj, UP-211002, India
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Singh AK, Thakurta B, Giri A, Pal M. Wafer-scale synthesis of two-dimensional ultrathin films. Chem Commun (Camb) 2024; 60:265-279. [PMID: 38087984 DOI: 10.1039/d3cc04610a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/03/2024]
Abstract
Two-dimensional (2D) materials, consisting of atomically thin layered crystals, have attracted tremendous interest due to their outstanding intrinsic properties and diverse applications in electronics, optoelectronics, and catalysis. The large-scale growth of high-quality ultrathin 2D films and their utilization in the facile fabrication of devices, easily adoptable in industrial applications, have been extensively sought after during the last decade; however, it remains a challenge to achieve these goals. Herein, we introduce three key concepts: (i) the microwave assisted quick (∼1 min) synthesis of wafer-scale (6-inch) anisotropic conducting ultrathin (∼1 nm) amorphous carbon and 2D semiconducting metal chalcogenide atomically thin films, (ii) a polymer-assisted deposition process for the synthesis of wafer-scale (6-inch) 2D metal chalcogenide and pyrolyzed carbon thin films, and (iii) the surface diffusion and epitaxial self-planarization induced synthesis of wafer-scale (2-inch) single crystal 2D binary and large-grain 2D ferromagnetic ternary metal chalcogenide thin films. The proposed synthesis concepts can pave a new way for the manufacture of wafer-scale high quality 2D ultrathin films and their utilization in the facile fabrication of devices.
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Affiliation(s)
- Amresh Kumar Singh
- Department of Chemistry, Institute of Science, Banaras Hindu University, Varanasi, UP 221005, India.
| | - Baishali Thakurta
- Department of Chemistry, Institute of Science, Banaras Hindu University, Varanasi, UP 221005, India.
| | - Anupam Giri
- Department of Chemistry, Faculty of Science, University of Allahabad, Prayagraj, UP 211002, India.
| | - Monalisa Pal
- Department of Chemistry, Institute of Science, Banaras Hindu University, Varanasi, UP 221005, India.
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Su Y, Ding C, Yao Y, Fu R, Xue M, Liu X, Lin J, Wang F, Zhan X, Wang Z. Orietation-controlled synthesis and Raman study of 2D SnTe. NANOTECHNOLOGY 2023; 34:505206. [PMID: 37729885 DOI: 10.1088/1361-6528/acfb8b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/26/2023] [Accepted: 09/20/2023] [Indexed: 09/22/2023]
Abstract
Tin telluride (SnTe), as a narrow bandgap semiconductor material, has great potential for developing photodetectors with wide spectra and ultra-fast response. At the same time, it is also an important topological crystal insulator material, with different topological surface states on several common surfaces. Here, we introduce different Sn sources and control the growth of regular SnTe nanosheets along the (100) and (111) planes through the atmospheric pressure chemical vapor deposition method. It has been proven through various characterizations that the synthesized SnTe is a high-quality single crystal. In addition, the angular resolved Raman spectra of SnTe nanosheets grown on different crystal planes are first demonstrated. The experimental results showed that square SnTe nanosheets grown along the (100) plane exhibit in-plane anisotropy. At the same time, we use micro-nanofabrication technology to manufacture SnTe-based field effect transistors and photodetectors to explore their electrical and optoelectronic properties. It has been confirmed that transistors based on grown SnTe nanosheets exhibit p-type semiconductor characteristics and have a high response to infrared light. This work provides a new approach for the controllable synthesis of SnTe and adds new content to the research of SnTe-based infrared detectors.
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Affiliation(s)
- Yanfei Su
- Department of Physics, Shanghai University of Electric Power, Shanghai 201306, People's Republic of China
- National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Chuyun Ding
- Department of Physics, Shanghai University of Electric Power, Shanghai 201306, People's Republic of China
- National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Yuyu Yao
- National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- Sino-Danish College, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Rao Fu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Mengfei Xue
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Xiaolin Liu
- Department of Physics, Shanghai University of Electric Power, Shanghai 201306, People's Republic of China
| | - Jia Lin
- Department of Physics, Shanghai University of Electric Power, Shanghai 201306, People's Republic of China
| | - Feng Wang
- National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Xueying Zhan
- National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Zhenxing Wang
- National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- Sino-Danish College, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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Kim J, Lee JH, Kim SH, Park Y, Jeong U, Lee D. First-Principles Investigations on the Semiconductor-to-Metal Phase Transition of 2D Si 2Te 3 for Reversible Resistive Switching. ACS APPLIED MATERIALS & INTERFACES 2023; 15:22212-22218. [PMID: 37116174 DOI: 10.1021/acsami.3c01267] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
Si2Te3 is attracting attention due to its compatibility with Si technology while still showing advantages as a two-dimensional layered material. Although recent experimental studies have observed the resistive switching process in Si2Te3-based memristors, the mechanism has not been clearly identified. In this study, first-principles density functional theory calculations are employed to understand the relationship between the phase transition of Si2Te3 and the reversible resistive switching of the Si2Te3-based memristor. Our calculation results show that although semiconducting Si2Te3 is energetically more stable than two metallic Si2Te3 phases (α and β), two metallic Si2Te3 can be energetically stabilized by excess holes. The enhanced energetic preference of two metallic Si2Te3 by excess holes is explained by the reduced occupation of antibonding states between Si and Te. Our study finds that the energy barrier for the phase transition between semiconducting Si2Te3 and α-metallic Si2Te3 varies significantly by excess charge carriers so the phase transition can be directly connected to the reversible resistive switching of the Si2Te3-based memristor under external bias. Our finding will serve as a cornerstone for optimizing the resistive switching process of the Si2Te3-based memristor.
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Affiliation(s)
- Jaeseon Kim
- Department of Materials Science and Engineering (MSE), and Division of Advanced Materials Science (AMS), Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - June Ho Lee
- Department of Materials Science and Engineering (MSE), and Division of Advanced Materials Science (AMS), Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Seong Hun Kim
- Department of Materials Science and Engineering (MSE), and Division of Advanced Materials Science (AMS), Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Youngjun Park
- Department of Materials Science and Engineering (MSE), and Division of Advanced Materials Science (AMS), Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Unyong Jeong
- Department of Materials Science and Engineering (MSE), and Division of Advanced Materials Science (AMS), Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Donghwa Lee
- Department of Materials Science and Engineering (MSE), and Division of Advanced Materials Science (AMS), Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
- Institute for Convergence Research and Education in Advanced Technology (I_CREATE), Yonsei University, Incheon 21983, Republic of Korea
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Giri A, Park G, Jeong U. Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications. Chem Rev 2023; 123:3329-3442. [PMID: 36719999 PMCID: PMC10103142 DOI: 10.1021/acs.chemrev.2c00455] [Citation(s) in RCA: 20] [Impact Index Per Article: 20.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/01/2023]
Abstract
The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.
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Affiliation(s)
- Anupam Giri
- Department of Chemistry, Faculty of Science, University of Allahabad, Prayagraj, UP-211002, India
| | - Gyeongbae Park
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea.,Functional Materials and Components R&D Group, Korea Institute of Industrial Technology, Gwahakdanji-ro 137-41, Sacheon-myeon, Gangneung, Gangwon-do25440, Republic of Korea
| | - Unyong Jeong
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea
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Kim G, Kim D, Choi Y, Ghorai A, Park G, Jeong U. New Approaches to Produce Large-Area Single Crystal Thin Films. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2203373. [PMID: 35737971 DOI: 10.1002/adma.202203373] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/14/2022] [Revised: 06/15/2022] [Indexed: 06/15/2023]
Abstract
Wafer-scale growth of single crystal thin films of metals, semiconductors, and insulators is crucial for manufacturing high-performance electronic and optical devices, but still challenging from both scientific and industrial perspectives. Recently, unconventional advanced synthetic approaches have been attempted and have made remarkable progress in diversifying the species of producible single crystal thin films. This review introduces several new synthetic approaches to produce large-area single crystal thin films of various materials according to the concepts and principles.
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Affiliation(s)
- Geonwoo Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Dongbeom Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Yoonsun Choi
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Arup Ghorai
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Gyeongbae Park
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Unyong Jeong
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
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Giri A, De C, Kumar M, Pal M, Lee HH, Kim JS, Cheong SW, Jeong U. Large-Area Epitaxial Film Growth of van der Waals Ferromagnetic Ternary Chalcogenides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2103609. [PMID: 34536038 DOI: 10.1002/adma.202103609] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/12/2021] [Revised: 08/03/2021] [Indexed: 06/13/2023]
Abstract
Following the first experimental realization of intrinsic ferromagnetism in 2D van der Waals (vdW) crystals, several ternary metal chalcogenides with unprecedented long-range ferromagnetic order have been explored. However, the synthesis of large-area 2D ternary metal chalcogenide thin films is a great challenge, and a generalized synthesis has not been demonstrated yet. Here, a quick and scalable synthesis of epitaxially aligned ferromagnetic ternary metal chalcogenide thin films (Cr2 Ge2 Te6 , Cr2 Si2 Te6 , Mn3 Si2 Te6 ) is reported. The synthesis is based on the flux-controlled surface diffusion of Te on metal (Cr, Mn)-deposited wafer (Ge, Si) substrates. Magnetic anisotropy study of the epitaxial ternary thin films reveals the intrinsic magnetic easy axis; out-of-plane direction for Cr2 Ge2 Te6 and Cr2 Si2 Te6 , and in-plane direction for Mn3 Si2 Te6 . In addition to the synthesis, this work creates an opportunity for transfer-free device fabrication for realizing magnetoelectronics based on the electrical control of both charge and spin degrees of freedom in 2D ferromagnetic semiconductors.
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Affiliation(s)
- Anupam Giri
- Department of Materials Science and Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 790-784, Korea
| | - Chandan De
- Center for Artificial Low Dimensional Electronic System (CALDES), Institute for Basic Science (IBS), Pohang, Republic of Korea
- Laboratory of Pohang Emergent Materials (l-PEM), Pohang Accelerator Laboratory (PAL), Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 790-784, Korea
| | - Manish Kumar
- Pohang Accelerator Laboratory (PAL), Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 790-784, Korea
| | - Monalisa Pal
- Department of Materials Science and Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 790-784, Korea
- Department of Chemistry, Institute of Science, Banaras Hindu University, Varanasi, India
| | - Hyun Hwi Lee
- Pohang Accelerator Laboratory (PAL), Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 790-784, Korea
| | - Jun Sung Kim
- Center for Artificial Low Dimensional Electronic System (CALDES), Institute for Basic Science (IBS), Pohang, Republic of Korea
- Department of Physics, Pohang University of Science and Technology, Pohang, Republic of Korea
| | - Sang-Wook Cheong
- Laboratory of Pohang Emergent Materials (l-PEM), Pohang Accelerator Laboratory (PAL), Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 790-784, Korea
- Rutgers Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, New Jersey, 08854, USA
| | - Unyong Jeong
- Department of Materials Science and Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 790-784, Korea
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