1
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He P, Jang J, Kang H, Yoon HJ. Thermoelectricity in Molecular Tunnel Junctions. Chem Rev 2025. [PMID: 39908450 DOI: 10.1021/acs.chemrev.4c00886] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2025]
Abstract
The growing interest in thermoelectric energy conversion technologies has recently extended to the molecular scale, with molecular tunnel junctions emerging as promising platforms for energy harvesting from heat in a quantum-tunneling regime. This Review explores the advances in thermoelectricity within molecular junctions, highlighting the unique ability of these junctions to exploit charge tunneling and controlled molecular structure to enhance thermoelectric performance. Molecular thermoelectrics, which bridge nanoscale material design and thermoelectric applications, utilize tunneling mechanisms, such as coherent tunneling and hopping processes, including coherent and incoherent pathways, to facilitate energy conversion. Complementing these mechanisms is an array of high-precision fabrication techniques for molecular junctions, from single-molecule break junctions to large-area liquid metal-based systems, each tailored to optimize heat and charge transfer properties. With novel design strategies such as the incorporation of electron-dense ligands, customizable anchor groups, and advanced junction architectures, molecular tunnel junctions hold promise for addressing challenging targets in thermoelectricity. This Review focuses on theoretical models, experimental methodologies, and design principles aimed at understanding the thermoelectric function in molecular junctions and enhancing the performance.
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Affiliation(s)
- Peng He
- Department of Chemistry, Korea University, Seoul 02841, Korea
| | - Jiung Jang
- Department of Chemistry, Korea University, Seoul 02841, Korea
| | - Hungu Kang
- Department of Chemistry, Korea University, Seoul 02841, Korea
| | - Hyo Jae Yoon
- Department of Chemistry, Korea University, Seoul 02841, Korea
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2
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Ma H, Chen S, Zhang X, Sun T, Huo P, Cui X, Man B, Yang C, Wei D. Cation Enrichment Effect Modulated Nafion/Graphene Field-Effect Transistor for Ultrasensitive RNA Detection. NANO LETTERS 2024; 24:16245-16252. [PMID: 39660777 DOI: 10.1021/acs.nanolett.4c03989] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/12/2024]
Abstract
The graphene field-effect transistor (GFET) biosensor serves as a foundational platform for detecting biomolecules, offering high conductivity, label-free operation, and easy integration. These features have garnered significant attention in biomarker detection. However, the presence of free cations in solution often leads to electrostatic shielding of negatively charged biomolecules, reducing GFET detection sensitivity (LOD ≥ 1 fM). Additionally, the limited capacitance change in GFET restricts its use as a response signal. This study introduces a cation enrichment electric field modulation strategy (CEEFMS) to enhance capacitance and Dirac voltage response during detection. The cation-enriched rough Nafion/graphene FET (CENG-FET) achieves RNA detection at the aM level. Utilizing total capacitance change and Dirac voltage shift as response signals, the CENG-FET demonstrates a wide linear range from 1 aM to 1 pM. These findings advance dual-signal detection strategies, reducing accidental inaccuracies in biomolecular sensing and paving the way for further research.
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Affiliation(s)
- Heqi Ma
- School of Physics and Electronics, Shandong Normal University, Jinan 250014, People's Republic of China
| | - Shuo Chen
- School of Physics and Electronics, Shandong Normal University, Jinan 250014, People's Republic of China
| | - Xinhao Zhang
- School of Physics and Electronics, Shandong Normal University, Jinan 250014, People's Republic of China
| | - Tianyu Sun
- School of Physics and Electronics, Shandong Normal University, Jinan 250014, People's Republic of China
| | - Panpan Huo
- School of Physics and Electronics, Shandong Normal University, Jinan 250014, People's Republic of China
| | - Xiangyong Cui
- School of Physics and Electronics, Shandong Normal University, Jinan 250014, People's Republic of China
| | - Baoyuan Man
- School of Physics and Electronics, Shandong Normal University, Jinan 250014, People's Republic of China
| | - Cheng Yang
- School of Physics and Electronics, Shandong Normal University, Jinan 250014, People's Republic of China
- Shandong Provincial Engineering and Technical Center of Light Manipulations, Jinan 250014, People's Republic of China
| | - Dongmei Wei
- School of Physics and Electronics, Shandong Normal University, Jinan 250014, People's Republic of China
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3
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Li M, Liu M, Qi F, Lin FR, Jen AKY. Self-Assembled Monolayers for Interfacial Engineering in Solution-Processed Thin-Film Electronic Devices: Design, Fabrication, and Applications. Chem Rev 2024; 124:2138-2204. [PMID: 38421811 DOI: 10.1021/acs.chemrev.3c00396] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/02/2024]
Abstract
Interfacial engineering has long been a vital means of improving thin-film device performance, especially for organic electronics, perovskites, and hybrid devices. It greatly facilitates the fabrication and performance of solution-processed thin-film devices, including organic field effect transistors (OFETs), organic solar cells (OSCs), perovskite solar cells (PVSCs), and organic light-emitting diodes (OLEDs). However, due to the limitation of traditional interfacial materials, further progress of these thin-film devices is hampered particularly in terms of stability, flexibility, and sensitivity. The deadlock has gradually been broken through the development of self-assembled monolayers (SAMs), which possess distinct benefits in transparency, diversity, stability, sensitivity, selectivity, and surface passivation ability. In this review, we first showed the evolution of SAMs, elucidating their working mechanisms and structure-property relationships by assessing a wide range of SAM materials reported to date. A comprehensive comparison of various SAM growth, fabrication, and characterization methods was presented to help readers interested in applying SAM to their works. Moreover, the recent progress of the SAM design and applications in mainstream thin-film electronic devices, including OFETs, OSCs, PVSCs and OLEDs, was summarized. Finally, an outlook and prospects section summarizes the major challenges for the further development of SAMs used in thin-film devices.
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Affiliation(s)
- Mingliang Li
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Hong Kong Institute for Clean Energy, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Ming Liu
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Hong Kong Institute for Clean Energy, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Feng Qi
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Hong Kong Institute for Clean Energy, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Francis R Lin
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Hong Kong Institute for Clean Energy, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Alex K-Y Jen
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Hong Kong Institute for Clean Energy, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195, United States
- State Key Laboratory of Marine Pollution, City University of Hong Kong, Kowloon, Hong Kong 999077, China
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4
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He P, Daaoub AHS, Sangtarash S, Sadeghi H, Yoon HJ. Thermopower in Underpotential Deposition-Based Molecular Junctions. NANO LETTERS 2024; 24:1988-1995. [PMID: 38270106 PMCID: PMC10870761 DOI: 10.1021/acs.nanolett.3c04438] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/16/2023] [Revised: 01/18/2024] [Accepted: 01/18/2024] [Indexed: 01/26/2024]
Abstract
Underpotential deposition (UPD) is an intriguing means for tailoring the interfacial electronic structure of an adsorbate at a substrate. Here we investigate the impact of UPD on thermoelectricity occurring in molecular tunnel junctions based on alkyl self-assembled monolayers (SAMs). We observed noticeable enhancements in the Seebeck coefficient of alkanoic acid and alkanethiol monolayers, by up to 2- and 4-fold, respectively, upon replacement of a conventional Au electrode with an analogous bimetallic electrode, Cu UPD on Au. Quantum transport calculations indicated that the increased Seebeck coefficients are due to the UPD-induced changes in the shape or position of transmission resonances corresponding to gateway orbitals, which depend on the choice of the anchor group. Our work unveils UPD as a potent means for altering the shape of the tunneling energy barrier at the molecule-electrode contact of alkyl SAM-based junctions and hence enhancing thermoelectric performance.
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Affiliation(s)
- Peng He
- Department
of Chemistry, Korea University, Seoul 02841, Korea
| | - Abdalghani H. S. Daaoub
- Device
Modelling Group, School of Engineering, University of Warwick, Coventry CV4 7AL, U.K.
| | - Sara Sangtarash
- Device
Modelling Group, School of Engineering, University of Warwick, Coventry CV4 7AL, U.K.
| | - Hatef Sadeghi
- Device
Modelling Group, School of Engineering, University of Warwick, Coventry CV4 7AL, U.K.
| | - Hyo Jae Yoon
- Department
of Chemistry, Korea University, Seoul 02841, Korea
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5
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Frank T, Shmueli S, Cohen Jungerman M, Shekhter P, Selzer Y. Large Seebeck Values in Metal-Molecule-Semimetal Junctions Attained by a Gateless Level-Alignment Method. NANO LETTERS 2023; 23:10473-10479. [PMID: 37930154 DOI: 10.1021/acs.nanolett.3c03188] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2023]
Abstract
Molecular junctions are potentially highly efficient devices for thermal energy harvesting since their transmission properties can be tailored to break electron-hole transport symmetry and consequently yield high Seebeck and Peltier coefficients. Full harnessing of this potential requires, however, a capability to precisely position their Fermi level within the transmission landscape. Currently, with the lack of such a "knob" for two-lead junctions, their thermoelectric performance is too low for applications. Here we report that the requested capability can be realized by using junctions with a semimetal lead and molecules with a tailored effect of their monolayers on the work function of the semimetal. The approach is demonstrated by junctions with monolayers of alkanethiols on bismuth (Bi). Fermi-level tuning enables in this case increasing the Seebeck coefficient by more than 2 orders of magnitude. The underlying mechanism of this capability is discussed, as well as its general applicability.
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Affiliation(s)
- Tamar Frank
- School of Chemistry, Tel Aviv University, Tel Aviv 69978, Israel
| | - Shachar Shmueli
- School of Chemistry, Tel Aviv University, Tel Aviv 69978, Israel
| | | | - Pini Shekhter
- The Tel Aviv Center for Nanoscience and Nanotechnology, Tel Aviv 69978, Israel
| | - Yoram Selzer
- School of Chemistry, Tel Aviv University, Tel Aviv 69978, Israel
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6
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Abstract
ConspectusUnderstanding the thermoelectric effects that convert energy between heat and electricity on a molecular scale is of great interest to the nanoscience community. As electronic devices continue to be miniaturized to nanometer scales, thermoregulation on such devices becomes increasingly critical. In addition, the study of molecular thermoelectricity provides information that cannot be accessed through conventional electrical conductance measurements. The field of molecular thermoelectrics aims to explore thermoelectric effects in electrode-molecule-electrode tunnel junctions and draw inferences on how the (supra)molecular structure of active molecules is associated with their thermopower. In this Account, we introduce a convenient and useful junction technique that enables thermovoltage measurements of one molecule thick films, self-assembled monolayers (SAMs), with reliability, and discuss the atomic-detailed structure-thermopower relations established by the technique. The technique relies on a microelectrode composed of non-Newtonian liquid metal, eutectic gallium-indium (EGaIn) covered with a native gallium oxide layer. The EGaIn electrode makes it possible to form thermoelectric contacts with the delicate structure of SAMs in a noninvasive fashion. A defined interface between SAM and the EGaIn electrode allows time-effective collection of large amounts of thermovoltage data, with great reproducibility, efficiency, and reliable interpretation and statistical analysis of the data. We also highlight recent efforts to utilize the EGaIn technique for probing molecular thermoelectricity and structure-thermopower relations. Using the technique, it was possible to unravel quantum-chemical mechanisms of thermoelectric functions, based on the Mott formula, in SAM-based large-area junctions, which in turn led us to set various hypotheses to boost the Seebeck coefficient. By validating the hypotheses again with the EGaIn technique, we revealed that the thermopower of junction increases through the reduction of the energy offset between accessible molecular orbital energy level and Fermi level or the tuning of broadening of the orbital energy level. Such alterations in the shape of energy topography of junction could be achieved through structural modifications in anchoring group and molecular backbone of SAM, and the bottom electrode. Molecular thermoelectrics offers a unique opportunity to build a well-defined nanoscale system and isolate an effect of interest from others, advancing fundamental understanding of charge transport across individual molecules and molecule-electrode interfaces. In the Account, we showed our recent work involving carefully designed molecular system that are relevant to answering the question of how thermopower differs between the tunneling and thermal-hopping regimes. The field of molecular thermoelectrics needs to address practical application-related issues, particularly molecular degradation in thermal environments. In this regard, we summarized the results highlighting the thermal instability of SAM-based junctions based on a traditional thiol anchor group and how to circumvent this problem. We also discussed the power factor (PF)─a practical parameter representing the efficiency for converting heat into electricity─of SAMs, evaluated using the EGaIn technique. In the Conclusion section of this Account, we present future challenges and perspectives.
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Affiliation(s)
- Jiung Jang
- Department of Chemistry, Korea University, Seoul 02841, Korea
| | - Peng He
- Department of Chemistry, Korea University, Seoul 02841, Korea
| | - Hyo Jae Yoon
- Department of Chemistry, Korea University, Seoul 02841, Korea
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7
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Shin J, Eo JS, Jeon T, Lee T, Wang G. Advances of Various Heterogeneous Structure Types in Molecular Junction Systems and Their Charge Transport Properties. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2202399. [PMID: 35975456 PMCID: PMC9596861 DOI: 10.1002/advs.202202399] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/26/2022] [Revised: 07/11/2022] [Indexed: 05/31/2023]
Abstract
Molecular electronics that can produce functional electronic circuits using a single molecule or molecular ensemble remains an attractive research field because it not only represents an essential step toward realizing ultimate electronic device scaling but may also expand our understanding of the intrinsic quantum transports at the molecular level. Recently, in order to overcome the difficulties inherent in the conventional approach to studying molecular electronics and developing functional device applications, this field has attempted to diversify the electrical characteristics and device architectures using various types of heterogeneous structures in molecular junctions. This review summarizes recent efforts devoted to functional devices with molecular heterostructures. Diverse molecules and materials can be combined and incorporated in such two- and three-terminal heterojunction structures, to achieve desirable electronic functionalities. The heterojunction structures, charge transport mechanisms, and possible strategies for implementing electronic functions using various hetero unit materials are presented sequentially. In addition, the applicability and merits of molecular heterojunction structures, as well as the anticipated challenges associated with their implementation in device applications are discussed and summarized. This review will contribute to a deeper understanding of charge transport through molecular heterojunction, and it may pave the way toward desirable electronic functionalities in molecular electronics applications.
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Affiliation(s)
- Jaeho Shin
- KU‐KIST Graduate School of Converging Science and TechnologyKorea UniversitySeoul02841Korea
- Department of ChemistryRice University6100 Main StreetHoustonTexas77005United States
| | - Jung Sun Eo
- KU‐KIST Graduate School of Converging Science and TechnologyKorea UniversitySeoul02841Korea
| | - Takgyeong Jeon
- KU‐KIST Graduate School of Converging Science and TechnologyKorea UniversitySeoul02841Korea
| | - Takhee Lee
- Department of Physics and AstronomyInstitute of Applied PhysicsSeoul National UniversitySeoul08826Korea
| | - Gunuk Wang
- KU‐KIST Graduate School of Converging Science and TechnologyKorea UniversitySeoul02841Korea
- Department of Integrative Energy EngineeringKorea UniversitySeoul02841Korea
- Center for Neuromorphic EngineeringKorea Institute of Science and TechnologySeoul02792Korea
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8
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Park S, Jo JW, Jang J, Ohto T, Tada H, Yoon HJ. Thermopower in Transition from Tunneling to Hopping. NANO LETTERS 2022; 22:7682-7689. [PMID: 36067367 DOI: 10.1021/acs.nanolett.2c03083] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The Seebeck effect of a molecular junction in a hopping regime or tunneling-to-hopping transition remains uncertain. This paper describes the Seebeck effect in molecular epitaxy films (OPIn where n = 1-9) based on imine condensation between an aryl amine and aldehyde and investigates how the Seebeck coefficient (S, μV/K) varies at the crossover region. The S value of OPIn linearly increased with increasing the molecular length (d, nm), ranging from 7.2 to 38.0 μV/K. The increasing rate changed from 0.99 to 0.38 μV·K-1 Å-1 at d = 3.4 nm (OPI4). Combined experimental and theoretical studies indicated that such a change stems from a tunneling-to-hopping transition, and the small but detectable length-dependence of thermopower in the long molecules originates from the gradual reduction of the tunneling contribution to the broadening of molecular orbital energy level, rather than its relative position to the Fermi level. Our work helps to bridge the gap between bulk and nanoscale thermoelectric systems.
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Affiliation(s)
- Sohyun Park
- Department of Chemistry, Korea University, Seoul 02841, Korea
| | - Jeong Woo Jo
- Department of Chemistry, Korea University, Seoul 02841, Korea
| | - Jiung Jang
- Department of Chemistry, Korea University, Seoul 02841, Korea
| | - Tatsuhiko Ohto
- Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan
| | - Hirokazu Tada
- Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan
| | - Hyo Jae Yoon
- Department of Chemistry, Korea University, Seoul 02841, Korea
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9
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Wang X, Ismael A, Ning S, Althobaiti H, Al-Jobory A, Girovsky J, Astier HPAG, O'Driscoll LJ, Bryce MR, Lambert CJ, Ford CJB. Electrostatic Fermi level tuning in large-scale self-assembled monolayers of oligo(phenylene-ethynylene) derivatives. NANOSCALE HORIZONS 2022; 7:1201-1209. [PMID: 35913108 DOI: 10.1039/d2nh00241h] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Understanding and controlling the orbital alignment of molecules placed between electrodes is essential in the design of practically-applicable molecular and nanoscale electronic devices. The orbital alignment is highly determined by the molecule-electrode interface. Dependence of orbital alignment on the molecular anchor group for single molecular junctions has been intensively studied; however, when scaling-up single molecules to large parallel molecular arrays (like self-assembled monolayers (SAMs)), two challenges need to be addressed: 1. Most desired anchor groups do not form high quality SAMs. 2. It is much harder to tune the frontier molecular orbitals via a gate voltage in SAM junctions than in single molecular junctions. In this work, we studied the effect of the molecule-electrode interface in SAMs with a micro-pore device, using a recently developed tetrapodal anchor to overcome challenge 1, and the combination of a single layered graphene top electrode with an ionic liquid gate to solve challenge 2. The zero-bias orbital alignment of different molecules was signalled by a shift in conductance minimum vs. gate voltage for molecules with different anchoring groups. Molecules with the same backbone, but a different molecule-electrode interface, were shown experimentally to have conductances that differ by a factor of 5 near zero bias. Theoretical calculations using density functional theory support the trends observed in the experimental data. This work sheds light on how to control electron transport within the HOMO-LUMO energy gap in molecular junctions and will be applicable in scaling up molecular electronic systems for future device applications.
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Affiliation(s)
- Xintai Wang
- Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge, CB3 0HE, UK
- School of Information Science and Technology, Dalian Maritime University, Dalian, China
| | - Ali Ismael
- Physics Department, Lancaster University, Lancaster, LA1 4YB, UK.
- Department of Physics, College of Education for Pure Science, Tikrit University, Tikrit, Iraq
| | - Shanglong Ning
- Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge, CB3 0HE, UK
| | - Hanan Althobaiti
- Physics Department, Lancaster University, Lancaster, LA1 4YB, UK.
- Department of Physics, College of Science, Taif-University, Taif, Saudi Arabia
| | - Alaa Al-Jobory
- Physics Department, Lancaster University, Lancaster, LA1 4YB, UK.
- Department of Physics, College of Science, University of Anbar, Anbar, Iraq
| | - Jan Girovsky
- Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge, CB3 0HE, UK
| | - Hippolyte P A G Astier
- Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge, CB3 0HE, UK
| | - Luke J O'Driscoll
- Department of Chemistry, Durham University, Lower Mountjoy, Stockton Road, Durham, DH1 3LE, UK
| | - Martin R Bryce
- Department of Chemistry, Durham University, Lower Mountjoy, Stockton Road, Durham, DH1 3LE, UK
| | - Colin J Lambert
- Physics Department, Lancaster University, Lancaster, LA1 4YB, UK.
| | - Christopher J B Ford
- Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge, CB3 0HE, UK
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10
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High-Temperature Electronic Transport Properties of PEDOT:PSS Top-Contact Molecular Junctions with Oligophenylene Dithiols. CRYSTALS 2022. [DOI: 10.3390/cryst12070962] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
In this study, we investigated the high-temperature electronic transport behavior of spin-coated PEDOT:PSS top-contact molecular ensemble junctions based on self-assembled monolayers (SAMs) of oligophenylene dithiols. We observed irreversible temperature-dependent charge transport at the high-temperature regime over 320 K. The effective contact resistance and normalized resistance decreased with increasing temperature (320 to 400 K), whereas the tunneling attenuation factor was nearly constant irrespective of temperature change. These findings demonstrate that the high-temperature transport properties are not dominated by the integrity of SAMs in molecular junctions, but rather the PEDOT:PSS/SAMs contact. Transition voltage spectroscopy measurements indicated that the contact barrier height of the PEDOT:PSS/SAMs is lowered at elevated temperatures, which gives rise to a decrease in the contact resistance and normalized resistance. The high-temperature charge transport through these junctions is also related to an increase in the grain area of PEDOT cores after thermal treatment. Moreover, it was found that there was no significant change in either the current density or normalized resistance of the annealed junctions after 60 days of storage in ambient conditions.
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11
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Liu R, Gong L, Zhu X, Zhu S, Wu X, Xue T, Yan L, Du J, Gu Z. Transformable Gallium-Based Liquid Metal Nanoparticles for Tumor Radiotherapy Sensitization. Adv Healthc Mater 2022; 11:e2102584. [PMID: 35114075 DOI: 10.1002/adhm.202102584] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/25/2021] [Revised: 01/10/2022] [Indexed: 12/23/2022]
Abstract
The past decades have witnessed an increasing interest in the exploration of room temperature gallium-based liquid metal (LM) in the field of microfluidics, soft robotics, electrobiology, and biomedicine. Herein, this study for the first time reports the utilization of nanosized gallium-indium eutectic alloys (EGaIn) as a radiosensitizer for enhancing tumor radiotherapy. The sodium alginate (Alg) functionalized EGaIn nanoparticles (denoted as EGaIn@Alg NPs) are prepared via a simple one-step synthesis method. The coating of Alg not only prevents the aggregation and oxidation of EGaIn NPs in an aqueous solution but also enables them low cytotoxicity, good biocompatibility, and in-situ formation of gels in the Ca2+ enriched tumor physiological microenvironment. Due to the metallic nature and high density, EGaIn can increase the generation of reactive oxygen species under the irradiation of X-ray, which can not only directly promote DNA damage and cell apoptosis, but also show an efficient tumor inhibition rate in vivo. Moreover, EGaIn@Alg NPs hold good performance as computed tomography (CT) and photoacoustic tomography (PAT) imaging contrast agents. This work provides an alternative nanotechnology strategy for tumor radiosensitization and also enlarges the biomedical application of gallium-based LM.
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Affiliation(s)
- Ruixue Liu
- School of Forensic Medicine Shanxi Medical University Jinzhong Shanxi Province 030619 China
- CAS Key Laboratory for Biomedical Effects of Nanomaterials and Nanosafety and CAS Center for Excellence in Nanoscience Institute of High Energy Physics and National Center for Nanoscience and Technology Chinese Academy of Sciences Beijing 100049 China
| | - Linji Gong
- CAS Key Laboratory for Biomedical Effects of Nanomaterials and Nanosafety and CAS Center for Excellence in Nanoscience Institute of High Energy Physics and National Center for Nanoscience and Technology Chinese Academy of Sciences Beijing 100049 China
- College of Materials Science and Optoelectronic Technology University of Chinese Academy of Sciences Beijing 100049 China
| | - Xianyu Zhu
- CAS Key Laboratory for Biomedical Effects of Nanomaterials and Nanosafety and CAS Center for Excellence in Nanoscience Institute of High Energy Physics and National Center for Nanoscience and Technology Chinese Academy of Sciences Beijing 100049 China
| | - Shuang Zhu
- CAS Key Laboratory for Biomedical Effects of Nanomaterials and Nanosafety and CAS Center for Excellence in Nanoscience Institute of High Energy Physics and National Center for Nanoscience and Technology Chinese Academy of Sciences Beijing 100049 China
- College of Materials Science and Optoelectronic Technology University of Chinese Academy of Sciences Beijing 100049 China
| | - Xiaochen Wu
- CAS Key Laboratory for Biomedical Effects of Nanomaterials and Nanosafety and CAS Center for Excellence in Nanoscience Institute of High Energy Physics and National Center for Nanoscience and Technology Chinese Academy of Sciences Beijing 100049 China
| | - Tingyu Xue
- Collaborative Innovation Center for Molecular Imaging of Precision Medicine Shanxi Medical University Taiyuan Shanxi Province 030001 China
| | - Liang Yan
- CAS Key Laboratory for Biomedical Effects of Nanomaterials and Nanosafety and CAS Center for Excellence in Nanoscience Institute of High Energy Physics and National Center for Nanoscience and Technology Chinese Academy of Sciences Beijing 100049 China
| | - Jiangfeng Du
- School of Forensic Medicine Shanxi Medical University Jinzhong Shanxi Province 030619 China
- Collaborative Innovation Center for Molecular Imaging of Precision Medicine Shanxi Medical University Taiyuan Shanxi Province 030001 China
- Department of Radiology First Hospital of Shanxi Medical University Taiyuan Shanxi Province 030001 China
| | - Zhanjun Gu
- CAS Key Laboratory for Biomedical Effects of Nanomaterials and Nanosafety and CAS Center for Excellence in Nanoscience Institute of High Energy Physics and National Center for Nanoscience and Technology Chinese Academy of Sciences Beijing 100049 China
- College of Materials Science and Optoelectronic Technology University of Chinese Academy of Sciences Beijing 100049 China
- GBA Research Innovation Institute for Nanotechnology Guangzhou 510700 China
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12
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Demonstration of Molecular Tunneling Junctions Based on Vertically Stacked Graphene Heterostructures. CRYSTALS 2022. [DOI: 10.3390/cryst12060787] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/06/2023]
Abstract
We demonstrate the fabrication and complete characterization of vertical molecular tunneling junctions based on graphene heterostructures, which incorporate a control series of arylalkane molecules acting as charge transport barriers. Raman spectroscopy and atomic force microscopy were employed to identify the formation of the molecular monolayer via an electrophilic diazonium reaction on a pre-patterned bottom graphene electrode. The top graphene electrode was transferred to the deposited molecular layer to form a stable electrical connection without filamentary damage. Then, we showed proof of intrinsic charge carrier transport through the arylalkane molecule in the vertical tunneling junctions by carrying out multiprobe approaches combining complementary transport characterization methods, which included length- and temperature-dependent charge transport measurements and transition voltage spectroscopy. Interpretation of all the electrical characterizations was conducted on the basis of intact statistical analysis using a total of 294 fabricated devices. Our results and analysis can provide an objective criterion to validate molecular electronic devices fabricated with graphene electrodes and establish statistically representative junction properties. Since many of the experimental test beds used to examine molecular junctions have generated large variation in the measured data, such a statistical approach is advantageous to identify the meaningful parameters with the data population and describe how the results can be used to characterize the graphene-based molecular junctions.
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13
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Duan L, Zhang Y, Zhao J, Zhang J, Li Q, Chen Y, Liu J, Liu Q. Unique and Excellent Paintable Liquid Metal for Fluorescent Displays. ACS APPLIED MATERIALS & INTERFACES 2022; 14:23951-23963. [PMID: 35537086 DOI: 10.1021/acsami.2c02714] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
A liquid metal (LM) generally has excellent electrical conductivity, thermal conductivity, flexibility, fluidity, and reflectivity. Innovative electronics using a LM to paint colorful fluorescent patterns may be applied to many important fields. Herein we propose, for the first time, the use of a LM to paint fluorescent patterns in the field of natural science. An LM containing a main-group metal (Ga50.25Bi8.28In28.2Sn13.27) is used to paint a uniform alloy film on a ceramic substrate. The painting is not restricted by any curved surface, shape, or size, which therefore gives the LM diverse adaptability. We have adopted the strategy of "painting-annealing-dealloying" through which LM can easily be diffused and doped into the substrate to produce various defects. Defects, my themselves or through their interactions, can produce different colors of emitted light. The primary fluorescence colors, such as purple, yellow, blue, and white, have been painted with the LM. Importantly, the brightness and color coordinates can be adjusted by changing the LM composition or annealing temperature, and intricate, delicate, colorful fluorescence patterns can be produced. Due to the unique painting form, colorful fluorescence, high stability, corrosion resistance, and low cost of the technique used for the LM, it can be used for displays, lighting panels, flexible electronic circuits, anticounterfeiting devices, and sensors.
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Affiliation(s)
- Liangfei Duan
- Yunnan Key Laboratory for Micro/Nano Materials & Technology, International Joint Research Center for Optoelectronic and Energy Materials, School of Materials and Energy, Yunnan University, Kunming 650091, People's Republic of China
| | - Yumin Zhang
- Yunnan Key Laboratory for Micro/Nano Materials & Technology, International Joint Research Center for Optoelectronic and Energy Materials, School of Materials and Energy, Yunnan University, Kunming 650091, People's Republic of China
| | - Jianhong Zhao
- Yunnan Key Laboratory for Micro/Nano Materials & Technology, International Joint Research Center for Optoelectronic and Energy Materials, School of Materials and Energy, Yunnan University, Kunming 650091, People's Republic of China
| | - Jin Zhang
- Yunnan Key Laboratory for Micro/Nano Materials & Technology, International Joint Research Center for Optoelectronic and Energy Materials, School of Materials and Energy, Yunnan University, Kunming 650091, People's Republic of China
| | - Qian Li
- CAS Key Laboratory of Cryogenics and Beijing Key Laboratory of Cryo- Biomedical Engineering, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Yu Chen
- Yunnan Key Laboratory for Micro/Nano Materials & Technology, International Joint Research Center for Optoelectronic and Energy Materials, School of Materials and Energy, Yunnan University, Kunming 650091, People's Republic of China
| | - Jing Liu
- CAS Key Laboratory of Cryogenics and Beijing Key Laboratory of Cryo- Biomedical Engineering, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- Department of Biomedical Engineering, School of Medicine, Tsinghua University, Beijing 100084, People's Republic of China
| | - Qingju Liu
- Yunnan Key Laboratory for Micro/Nano Materials & Technology, International Joint Research Center for Optoelectronic and Energy Materials, School of Materials and Energy, Yunnan University, Kunming 650091, People's Republic of China
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Park S, Yoon HJ. Thermal and Thermoelectric Properties of SAM-Based Molecular Junctions. ACS APPLIED MATERIALS & INTERFACES 2021; 14:22818-22825. [PMID: 34961308 DOI: 10.1021/acsami.1c20840] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
In molecular thermoelectrics, the thermopower of molecular junctions is closely interlinked with their thermal properties; however, the detailed relationship between them remains uncertain. This study systematically investigates the thermal properties of self-assembled monolayer (SAM)-based molecular junctions and relates them to the thermoelectric performance of the junctions. The electrode temperatures for the bare AuTS, AuTS/EGaIn, and AuTS/TPT SAM//Ga2O3/EGaIn samples placed on a hot chuck were measured under different conditions, such as air vs vacuum and the presence and absence of thermal grease, which generates a heat conduction channel from a hot chuck to gold. It was revealed that the SAM was the most efficient thermal resistor, which was responsible for the creation of a temperature differential (ΔT) across the junction; ΔT in an air atmosphere is overestimated to some extent, and air mainly contributes to large dispersions of thermovoltage (ΔV) data. While junction measurements in air were possible at low ΔT (up to 13 K), the new optimal condition, under a vacuum and with thermal grease, allowed us to examine a wide temperature range up to ΔT = 40 K and obtain a more reliable Seebeck coefficient (S, μV/K). The value of S under the new condition was ∼1.4 times higher than that measured in air without thermal grease. Our study shows the potential of liquid-metal-based junctions to reliably investigate heat conduction across nanometer-thick organic films and elaborates on how the thermal properties of molecular junctions affect their thermoelectric performance.
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Affiliation(s)
- Sohyun Park
- Department of Chemistry, Korea University, Seoul 02841, Korea
| | - Hyo Jae Yoon
- Department of Chemistry, Korea University, Seoul 02841, Korea
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