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Sun F, Wu M, Ren J, Wang X, Yang H, Zhang X, Chen W, Zheng Y. Reversible Mechanical Switching of Ferroelastic Stripe Domains in Multiferroic Thin Films. ACS APPLIED MATERIALS & INTERFACES 2024; 16:32425-32433. [PMID: 38865279 DOI: 10.1021/acsami.4c04405] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2024]
Abstract
The application potential of ferroelectric thin films largely relies on the controllability of their domain structure. Among the various proposed strategies, mechanical switching is being considered as a potential alternative to replace electrical switching for control of the domain structure of ferroelectric thin films via, e.g., the flexoelectric effect. So far, studies on mechanical switching are confined to out-of-plane polarization switching in ferroelectric thin films, which are in pristine or prepoled single-domain states. In this work, we report reversible in-plane mechanical switching of the monoclinic phase (MC phase) stripe domains in BiFeO3 thin films can be realized by scanning tip force. Via controlling the fast scan direction of the scanning probe microscopy tip and the magnitude of the tip force, the effective trailing field induced by the local tip force can be rotated to consequently switch the net in-plane polarization of the two-variant stripe domain patterns by either 90° or 180°. Moreover, the monoclinic to rhombohedral (MC-R) phase transition occurs during mechanical switching with the distribution of R-phase domains dependent on the switching paths. These results extend our current understanding of the mechanical switching behavior in ferroelectric thin films and should be instructive for their future applications.
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Affiliation(s)
- Fei Sun
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Mengjun Wu
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- School of Materials, Shenzhen Campus of Sun Yat-sen University, Shenzhen 518107, China
| | - Jianhua Ren
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Xintong Wang
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Hui Yang
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Xiaoyue Zhang
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Weijin Chen
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- School of Materials, Shenzhen Campus of Sun Yat-sen University, Shenzhen 518107, China
| | - Yue Zheng
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
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Zakrzewski J, Liberka M, Wang J, Chorazy S, Ohkoshi SI. Optical Phenomena in Molecule-Based Magnetic Materials. Chem Rev 2024; 124:5930-6050. [PMID: 38687182 PMCID: PMC11082909 DOI: 10.1021/acs.chemrev.3c00840] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/02/2024]
Abstract
Since the last century, we have witnessed the development of molecular magnetism which deals with magnetic materials based on molecular species, i.e., organic radicals and metal complexes. Among them, the broadest attention was devoted to molecule-based ferro-/ferrimagnets, spin transition materials, including those exploring electron transfer, molecular nanomagnets, such as single-molecule magnets (SMMs), molecular qubits, and stimuli-responsive magnetic materials. Their physical properties open the application horizons in sensors, data storage, spintronics, and quantum computation. It was found that various optical phenomena, such as thermochromism, photoswitching of magnetic and optical characteristics, luminescence, nonlinear optical and chiroptical effects, as well as optical responsivity to external stimuli, can be implemented into molecule-based magnetic materials. Moreover, the fruitful interactions of these optical effects with magnetism in molecule-based materials can provide new physical cross-effects and multifunctionality, enriching the applications in optical, electronic, and magnetic devices. This Review aims to show the scope of optical phenomena generated in molecule-based magnetic materials, including the recent advances in such areas as high-temperature photomagnetism, optical thermometry utilizing SMMs, optical addressability of molecular qubits, magneto-chiral dichroism, and opto-magneto-electric multifunctionality. These findings are discussed in the context of the types of optical phenomena accessible for various classes of molecule-based magnetic materials.
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Affiliation(s)
- Jakub
J. Zakrzewski
- Faculty
of Chemistry, Jagiellonian University, Gronostajowa 2, 30-387 Krakow, Poland
- Doctoral
School of Exact and Natural Sciences, Jagiellonian
University, Lojasiewicza
11, 30-348 Krakow, Poland
| | - Michal Liberka
- Faculty
of Chemistry, Jagiellonian University, Gronostajowa 2, 30-387 Krakow, Poland
- Doctoral
School of Exact and Natural Sciences, Jagiellonian
University, Lojasiewicza
11, 30-348 Krakow, Poland
| | - Junhao Wang
- Department
of Materials Science, Faculty of Pure and Applied Science, University of Tsukuba, 1-1-1 Tonnodai, Tsukuba, Ibaraki 305-8573, Japan
| | - Szymon Chorazy
- Faculty
of Chemistry, Jagiellonian University, Gronostajowa 2, 30-387 Krakow, Poland
| | - Shin-ichi Ohkoshi
- Department
of Chemistry, School of Science, The University
of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan
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3
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Song L, Zhao Y, Xu B, Du R, Li H, Feng W, Yang J, Li X, Liu Z, Wen X, Peng Y, Wang Y, Sun H, Huang L, Jiang Y, Cai Y, Jiang X, Shi J, He J. Robust multiferroic in interfacial modulation synthesized wafer-scale one-unit-cell of chromium sulfide. Nat Commun 2024; 15:721. [PMID: 38267426 PMCID: PMC10808545 DOI: 10.1038/s41467-024-44929-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/26/2023] [Accepted: 01/11/2024] [Indexed: 01/26/2024] Open
Abstract
Multiferroic materials offer a promising avenue for manipulating digital information by leveraging the cross-coupling between ferroelectric and ferromagnetic orders. Despite the ferroelectricity has been uncovered by ion displacement or interlayer-sliding, one-unit-cell of multiferroic materials design and wafer-scale synthesis have yet to be realized. Here we develope an interface modulated strategy to grow 1-inch one-unit-cell of non-layered chromium sulfide with unidirectional orientation on industry-compatible c-plane sapphire. The interfacial interaction between chromium sulfide and substrate induces the intralayer-sliding of self-intercalated chromium atoms and breaks the space reversal symmetry. As a result, robust room-temperature ferroelectricity (retaining more than one month) emerges in one-unit-cell of chromium sulfide with ultrahigh remanent polarization. Besides, long-range ferromagnetic order is discovered with the Curie temperature approaching 200 K, almost two times higher than that of bulk counterpart. In parallel, the magnetoelectric coupling is certified and which makes 1-inch one-unit-cell of chromium sulfide the largest and thinnest multiferroics.
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Affiliation(s)
- Luying Song
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Ying Zhao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), Dalian University of Technology, Dalian, 116024, China
| | - Bingqian Xu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Ruofan Du
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Hui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Wang Feng
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Junbo Yang
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Xiaohui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Zijia Liu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Xia Wen
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Yanan Peng
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Yuzhu Wang
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Hang Sun
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Ling Huang
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Yulin Jiang
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Yao Cai
- The Institute of Technological Sciences, Wuhan University, 430072, Wuhan, China
| | - Xue Jiang
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), Dalian University of Technology, Dalian, 116024, China
| | - Jianping Shi
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China.
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, China.
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Gao CS, Jian SR, Le PH, Chou WC, Juang JY, Chang HW, Lin CM. Effects of Oxygen Pressure on the Microstructures and Nanomechanical Properties of Samarium-Doped BiFeO 3 Thin Films. MICROMACHINES 2023; 14:1879. [PMID: 37893316 PMCID: PMC10609498 DOI: 10.3390/mi14101879] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2023] [Revised: 09/27/2023] [Accepted: 09/27/2023] [Indexed: 10/29/2023]
Abstract
In this study, samarium (Sm-10at%)-doped BiFeO3 (SmBFO) thin films were grown on platinum-coated glass substrates using pulsed laser deposition (PLD) to unveil the correlation between the microstructures and nanomechanical properties of the films. The PLD-derived SmBFO thin films were prepared under various oxygen partial pressures (PO2) of 10, 30, and 50 mTorr at a substrate temperature of 600 °C. The scanning electron microscopy analyses revealed a surface morphology consisting of densely packed grains, although the size distribution varied with the PO2. X-ray diffraction results indicate that all SmBFO thin films are textured and preferentially oriented along the (110) crystallographic orientation. The crystallite sizes of the obtained SmBFO thin films calculated from the Scherrer and (Williamson-Hall) equations increased from 20 (33) nm to 25 (52) nm with increasing PO2. In addition, the nanomechanical properties (the hardness and Young's modulus) of the SmBFO thin films were measured by using nanoindentation. The relationship between the hardness and crystalline size of SmBFO thin films appears to closely follow the Hall-Petch equation. In addition, the PO2 dependence of the film microstructure, the crystallite size, the hardness, and Young's modulus of SmBFO thin films are discussed.
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Affiliation(s)
- Chih-Sheng Gao
- Department of Materials Science and Engineering, I-Shou University, Kaohsiung City 84001, Taiwan; (C.-S.G.); (S.-R.J.)
| | - Sheng-Rui Jian
- Department of Materials Science and Engineering, I-Shou University, Kaohsiung City 84001, Taiwan; (C.-S.G.); (S.-R.J.)
- Department of Fragrance and Cosmetic Science, College of Pharmacy, Kaohsiung Medical University, Kaohsiung 80708, Taiwan
| | - Phuoc Huu Le
- Center for Plasma and Thin Film Technologies, Ming Chi University of Technology, New Taipei City 24301, Taiwan;
| | - Wu-Ching Chou
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan; (W.-C.C.); (J.-Y.J.)
| | - Jenh-Yih Juang
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan; (W.-C.C.); (J.-Y.J.)
| | - Huang-Wei Chang
- Department of Physics, National Chung Cheng University, Chia-Yi 62102, Taiwan
| | - Chih-Ming Lin
- Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan
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Wu M, Sun F, Wang X, Zhang X, Chen W, Zheng Y. Facile Control of Ferroelastic Domain Patterns in Multiferroic Thin Films by a Scanning Tip Bias. ACS APPLIED MATERIALS & INTERFACES 2023; 15:11983-11993. [PMID: 36808955 DOI: 10.1021/acsami.2c20106] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
BiFeO3, known as the "holy grail of all multiferroics", provides an appealing platform for exploration of multifield coupling physics and design of functional devices. Many fantastic properties of BiFeO3 are regulated by its ferroelastic domain structure. However, a facile programable control on the ferroelastic domain structure in BiFeO3 remains challenging and our understanding on the existing control strategies is also far from complete. This work reports a facile control of ferroelastic domain patterns in BiFeO3 thin films under area scanning poling by exploiting the tip bias as the control parameter. Combining scanning probe microscopy experiments and simulations, we found that BiFeO3 thin films with pristine 71° rhombohedral-phase stripe domains exhibit at least four switching pathways solely by controlling the scanning tip bias. As a result, one can readily write mesoscopic topological defects into the films without the necessity to change the tip motion. The correlation between conductance of the scanned region and the switching pathway is further investigated. Our results extend the current understanding on the domain switching kinetics and the coupled electronic transport properties in BiFeO3 thin films. The facile voltage control of ferroelastic domains should facilitate the development of configurable electronic and spintronic devices.
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Affiliation(s)
- Mengjun Wu
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Fei Sun
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Xintong Wang
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Xiaoyue Zhang
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Weijin Chen
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- School of Materials, Shenzhen Campus of Sun Yat-sen University, Shenzhen 518107, China
| | - Yue Zheng
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
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Wang Y, Wang P, Wang H, Xu B, Li H, Cheng M, Feng W, Du R, Song L, Wen X, Li X, Yang J, Cai Y, He J, Wang Z, Shi J. Room-Temperature Magnetoelectric Coupling in Atomically Thin ε-Fe 2 O 3. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209465. [PMID: 36460029 DOI: 10.1002/adma.202209465] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/14/2022] [Revised: 11/15/2022] [Indexed: 06/17/2023]
Abstract
2D multiferroics with magnetoelectric coupling combine the magnetic order and electric polarization in a single phase, providing a cornerstone for constructing high-density information storages and low-energy-consumption spintronic devices. The strong interactions between various order parameters are crucial for realizing such multifunctional applications, nevertheless, this criterion is rarely met in classical 2D materials at room-temperature. Here an ingenious space-confined chemical vapor deposition strategy is designed to synthesize atomically thin non-layered ε-Fe2 O3 single crystals and disclose the room-temperature long-range ferrimagnetic order. Interestingly, the strong ferroelectricity and its switching behavior are unambiguously discovered in atomically thin ε-Fe2 O3 , accompanied with an anomalous thickness-dependent coercive voltage. More significantly, the robust room-temperature magnetoelectric coupling is uncovered by controlling the magnetism with electric field and verifies the multiferroic feature of atomically thin ε-Fe2 O3 . This work not only represents a substantial leap in terms of the controllable synthesis of 2D multiferroics with robust magnetoelectric coupling, but also provides a crucial step toward the practical applications in low-energy-consumption electric-writing/magnetic-reading devices.
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Affiliation(s)
- Yuzhu Wang
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Peng Wang
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Hao Wang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Bingqian Xu
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Hui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Mo Cheng
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Wang Feng
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Ruofan Du
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Luying Song
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Xia Wen
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Xiaohui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Junbo Yang
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Yao Cai
- The Institute of Technological Sciences, Wuhan University, Wuhan, 430072, P. R. China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, P. R. China
| | - Zhenxing Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Jianping Shi
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
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7
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Enhanced ferroelectric and ferrimagnetism properties at room temperature in BaTiO3 doped GaFeO3 ceramics. Chem Phys Lett 2023. [DOI: 10.1016/j.cplett.2023.140316] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/18/2023]
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