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Yang C, Wang H, Cao Z, Chen X, Zhou G, Zhao H, Wu Z, Zhao Y, Sun B. Memristor-Based Bionic Tactile Devices: Opening the Door for Next-Generation Artificial Intelligence. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2308918. [PMID: 38149504 DOI: 10.1002/smll.202308918] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/06/2023] [Revised: 11/13/2023] [Indexed: 12/28/2023]
Abstract
Bioinspired tactile devices can effectively mimic and reproduce the functions of the human tactile system, presenting significant potential in the field of next-generation wearable electronics. In particular, memristor-based bionic tactile devices have attracted considerable attention due to their exceptional characteristics of high flexibility, low power consumption, and adaptability. These devices provide advanced wearability and high-precision tactile sensing capabilities, thus emerging as an important research area within bioinspired electronics. This paper delves into the integration of memristors with other sensing and controlling systems and offers a comprehensive analysis of the recent research advancements in memristor-based bionic tactile devices. These advancements incorporate artificial nociceptors and flexible electronic skin (e-skin) into the category of bio-inspired sensors equipped with capabilities for sensing, processing, and responding to stimuli, which are expected to catalyze revolutionary changes in human-computer interaction. Finally, this review discusses the challenges faced by memristor-based bionic tactile devices in terms of material selection, structural design, and sensor signal processing for the development of artificial intelligence. Additionally, it also outlines future research directions and application prospects of these devices, while proposing feasible solutions to address the identified challenges.
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Affiliation(s)
- Chuan Yang
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan, 610031, China
| | - Hongyan Wang
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan, 610031, China
| | - Zelin Cao
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
| | - Xiaoliang Chen
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
| | - Guangdong Zhou
- College of Artificial Intelligence, Brain-inspired Computing & Intelligent Control of Chongqing Key Lab, Southwest University, Chongqing, 400715, China
| | - Hongbin Zhao
- State Key Laboratory of Advanced Materials for Smart Sensing, General Research Institute for Nonferrous Metals, Beijing, 100088, China
| | - Zhenhua Wu
- School of Mechanical Engineering, Shanghai Jiao Tong University, 800 DongChuan Rd, Shanghai, 200240, China
| | - Yong Zhao
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan, 610031, China
- Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, Fujian Normal University, Fuzhou, Fujian, 350117, China
| | - Bai Sun
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
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2
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Dong X, Sun H, Li S, Zhang X, Chen J, Zhang X, Zhao Y, Li Y. Versatile Cu2ZnSnS4-based synaptic memristor for multi-field-regulated neuromorphic applications. J Chem Phys 2024; 160:154702. [PMID: 38619459 DOI: 10.1063/5.0206100] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/29/2024] [Accepted: 03/28/2024] [Indexed: 04/16/2024] Open
Abstract
Integrating both electrical and light-modulated multi-type neuromorphic functions in a single synaptic memristive device holds the most potential for realizing next-generation neuromorphic systems, but is still challenging yet achievable. Herein, a simple bi-terminal optoelectronic synaptic memristor is newly proposed based on kesterite Cu2ZnSnS4, exhibiting stable nonvolatile resistive switching with excellent spatial uniformity and unique optoelectronic synaptic behaviors. The device demonstrates not only low switching voltage (-0.39 ± 0.08 V), concentrated Set/Reset voltage distribution (<0.08/0.15 V), and long retention time (>104 s) but also continuously modulable conductance by both electric (different width/interval/amplitude) and light (470-808 nm with different intensity) stimulus. These advantages make the device good electrically and optically simulated synaptic functions, including excitatory and inhibitory, paired-pulsed facilitation, short-/long-term plasticity, spike-timing-dependent plasticity, and "memory-forgetting" behavior. Significantly, decimal arithmetic calculation (addition, subtraction, and commutative law) is realized based on the linear conductance regulation, and high precision pattern recognition (>88%) is well achieved with an artificial neural network constructed by 5 × 5 × 4 memristor array. Predictably, such kesterite-based optoelectronic memristors can greatly open the possibility of realizing multi-functional neuromorphic systems.
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Affiliation(s)
- Xiaofei Dong
- Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Hao Sun
- Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Siyuan Li
- Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Xiang Zhang
- Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Jiangtao Chen
- Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Xuqiang Zhang
- Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Yun Zhao
- Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Yan Li
- Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
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Yin L, Cheng R, Ding J, Jiang J, Hou Y, Feng X, Wen Y, He J. Two-Dimensional Semiconductors and Transistors for Future Integrated Circuits. ACS NANO 2024; 18:7739-7768. [PMID: 38456396 DOI: 10.1021/acsnano.3c10900] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/09/2024]
Abstract
Silicon transistors are approaching their physical limit, calling for the emergence of a technological revolution. As the acknowledged ultimate version of transistor channels, 2D semiconductors are of interest for the development of post-Moore electronics due to their useful properties and all-in-one potentials. Here, the promise and current status of 2D semiconductors and transistors are reviewed, from materials and devices to integrated applications. First, we outline the evolution and challenges of silicon-based integrated circuits, followed by a detailed discussion on the properties and preparation strategies of 2D semiconductors and van der Waals heterostructures. Subsequently, the significant progress of 2D transistors, including device optimization, large-scale integration, and unconventional devices, are presented. We also examine 2D semiconductors for advanced heterogeneous and multifunctional integration beyond CMOS. Finally, the key technical challenges and potential strategies for 2D transistors and integrated circuits are also discussed. We envision that the field of 2D semiconductors and transistors could yield substantial progress in the upcoming years and hope this review will trigger the interest of scientists planning their next experiment.
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Affiliation(s)
- Lei Yin
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jiahui Ding
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jian Jiang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Yutang Hou
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Xiaoqiang Feng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
- Wuhan Institute of Quantum Technology, Wuhan 430206, People's Republic of China
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Zhang X, Wang K, Li Z, Qi J, Li D, Luo J, Liu J. Fabrication of high quality lead-free double perovskite Cs 2AgBiBr 6thin film and its application in memristor with ultralow operation voltage. NANOTECHNOLOGY 2024; 35:195708. [PMID: 38253005 DOI: 10.1088/1361-6528/ad2158] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/14/2023] [Accepted: 01/22/2024] [Indexed: 01/24/2024]
Abstract
Recently, the lead-free double perovskite Cs2AgBiBr6has been considered as a promising candidate for next-generation nonvolatile memory and artificial synapse devices due to its high stability and low toxicity compared to its lead-based counterparts. In this work, we developed a simple and effective method to produce high-quality lead-free double perovskite Cs2AgBiBr6thin films without pinholes and particles by applying a low-pressure assisted method under ambient condition with a relative humidity (RH) of about 45%. The formation of pinholes and Ag precipitation in the perovskite Cs2AgBiBr6 films is effectively suppressed by the proper ratio of N,N-dimenthylformamide (DMF) mixed in dimethyl sulfoxide (DMSO) solvents. Furthermore, the grain size of the Cs2AgBiBr6films can be significantly increased by increasing the post-annealing temperature. Finally, a sandwiched structure memristor with an ITO/Cs2AgBiBr6/Ta configuration was successfully demonstrated, featuring ultralow operation voltage (VSet∼ 57 ± 23 mV,VReset∼ -692 ± 68 mV) and satisfactory memory window (the ratio ofRHRS/RLRS∼ 10 times), which makes it suitable for low-power consumption information storage devices.
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Affiliation(s)
- Xiaofang Zhang
- School of Mechanical and Electronic Engineering, East China University of Technology, Nanchang, 330013, People's Republic of China
| | - Ke Wang
- School of Mechanical and Electronic Engineering, East China University of Technology, Nanchang, 330013, People's Republic of China
| | - Zhenyu Li
- School of Mechanical and Electronic Engineering, East China University of Technology, Nanchang, 330013, People's Republic of China
| | - Juanjuan Qi
- School of Mechanical and Electronic Engineering, East China University of Technology, Nanchang, 330013, People's Republic of China
| | - Dongke Li
- Hangzhou Global Scientific and Technological Innovation Center, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 311200, People's Republic of China
| | - Jianqiang Luo
- School of Chemistry, Biology and Materials Science, East China University of Technology, Nanchang, 330013, People's Republic of China
| | - Jian Liu
- School of Mechanical and Electronic Engineering, East China University of Technology, Nanchang, 330013, People's Republic of China
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5
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Chen H, Hung CT, Zhang W, Xu L, Zhang P, Li W, Zhao Z, Zhao D. Asymmetric Monolayer Mesoporous Nanosheets of Regularly Arranged Semi-Opened Pores via a Dual-Emulsion-Directed Micelle Assembly. J Am Chem Soc 2023; 145:27708-27717. [PMID: 38054893 DOI: 10.1021/jacs.3c09927] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
Constructing asymmetric two-dimensional (2D) mesoporous nanomaterials with new pore structure, tunable monolayer architectures, and especially anisotropic surfaces remains a great challenge in materials science. Here, we report a dual-emulsion directed micelle assembly approach to fabricate a novel type of asymmetric monolayer mesoporous organosilica nanosheet for the first time. In this asymmetric 2D structure, numerous quasi-spherical semiopened mesopores (∼20 nm in diameter, 24 nm in opening size) were regularly arranged on a plane, endowing the porous nanosheets (several micrometers in size) with a typical surface anisotropy on two sides. Meanwhile, lots of triangular intervoids (4.0-5.0 nm in size) can also be found among each three semiopened mesopores, enabling the nanosheet to be interconnected. Vitally, such interconnected, anisotropic porous nanosheets exhibit ultrahigh accessible surface area (∼714 m2 g-1) and good lipophilicity properties owing to the abundant semiopened mesopores. Additionally, besides the nanosheet, the configuration of the asymmetric porous structure can also be transformed into a microcapsule when controlling the emulsification size via a facile ultrasonic treatment. As a demonstration, we show that the asymmetric microcapsule shows a high demulsification efficiency (>98%) and cyclic stability (>6 recycle times). Our protocol opens up a new avenue for developing next-generation asymmetric mesoporous materials for various applications.
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Affiliation(s)
- Hanxing Chen
- Department of Chemistry, Laboratory of Advanced Materials, Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, State Key Laboratory of Molecular Engineering of Polymers, College of Chemistry and Materials, Fudan University, Shanghai 200433, China
| | - Chin-Te Hung
- Department of Chemistry, Laboratory of Advanced Materials, Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, State Key Laboratory of Molecular Engineering of Polymers, College of Chemistry and Materials, Fudan University, Shanghai 200433, China
| | - Wei Zhang
- Department of Chemistry, Laboratory of Advanced Materials, Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, State Key Laboratory of Molecular Engineering of Polymers, College of Chemistry and Materials, Fudan University, Shanghai 200433, China
| | - Li Xu
- Department of Chemistry, Laboratory of Advanced Materials, Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, State Key Laboratory of Molecular Engineering of Polymers, College of Chemistry and Materials, Fudan University, Shanghai 200433, China
| | - Pengfei Zhang
- Department of Chemistry, Laboratory of Advanced Materials, Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, State Key Laboratory of Molecular Engineering of Polymers, College of Chemistry and Materials, Fudan University, Shanghai 200433, China
| | - Wei Li
- Department of Chemistry, Laboratory of Advanced Materials, Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, State Key Laboratory of Molecular Engineering of Polymers, College of Chemistry and Materials, Fudan University, Shanghai 200433, China
| | - Zaiwang Zhao
- College of Energy Materials and Chemistry, College of Chemistry and Chemical Engineering, Inner Mongolia University, Hohhot 010070, P. R. China
| | - Dongyuan Zhao
- Department of Chemistry, Laboratory of Advanced Materials, Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, State Key Laboratory of Molecular Engineering of Polymers, College of Chemistry and Materials, Fudan University, Shanghai 200433, China
- College of Energy Materials and Chemistry, College of Chemistry and Chemical Engineering, Inner Mongolia University, Hohhot 010070, P. R. China
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6
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Yin L, Cheng R, Pan S, Xiong W, Chang S, Zhai B, Wen Y, Cai Y, Guo Y, Sendeku MG, Jiang J, Liao W, Wang Z, He J. Engineering Atomic-Scale Patterning and Resistive Switching in 2D Crystals and Application in Image Processing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2306850. [PMID: 37688530 DOI: 10.1002/adma.202306850] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/12/2023] [Revised: 09/05/2023] [Indexed: 09/11/2023]
Abstract
The ultrathin thickness of 2D layered materials affords the control of their properties through defects, surface modification, and electrostatic fields more efficiently compared with bulk architecture. In particular, patterning design, such as moiré superlattice patterns and spatially periodic dielectric structures, are demonstrated to possess the ability to precisely control the local atomic and electronic environment at large scale, thus providing extra degrees of freedom to realize tailored material properties and device functionality. Here, the scalable atomic-scale patterning in superionic cuprous telluride by using the bonding difference at nonequivalent copper sites is reported. Moreover, benefitting from the natural coupling of ordered and disordered sublattices, controllable piezoelectricity-like multilevel switching and bipolar switching with the designed crystal structure and electrical contact is realized, and their application in image enhancement is demonstrated. This work extends the known classes of patternable crystals and atomic switching devices, and ushers in a frontier for image processing with memristors.
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Affiliation(s)
- Lei Yin
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
- Hubei Luojia Laboratory, Wuhan, 430072, China
| | - Shurong Pan
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Wenqi Xiong
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Sheng Chang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Baoxing Zhai
- Institute of Semiconductors, Henan Academy of Sciences, Zhengzhou, 450046, China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yuchen Cai
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Yuzheng Guo
- School of Electrical Engineering and Automation, Wuhan University, Wuhan, 430072, China
| | | | - Jian Jiang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Weitu Liao
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Zhenxing Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
- Hubei Luojia Laboratory, Wuhan, 430072, China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China
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Li S, Ouyang D, Zhang N, Zhang Y, Murthy A, Li Y, Liu S, Zhai T. Substrate Engineering for Chemical Vapor Deposition Growth of Large-Scale 2D Transition Metal Dichalcogenides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211855. [PMID: 37095721 DOI: 10.1002/adma.202211855] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/18/2022] [Revised: 04/17/2023] [Indexed: 05/03/2023]
Abstract
The large-scale production of 2D transition metal dichalcogenides (TMDs) is essential to realize their industrial applications. Chemical vapor deposition (CVD) has been considered as a promising method for the controlled growth of high-quality and large-scale 2D TMDs. During a CVD process, the substrate plays a crucial role in anchoring the source materials, promoting the nucleation and stimulating the epitaxial growth. It thus significantly affects the thickness, microstructure, and crystal quality of the products, which are particularly important for obtaining 2D TMDs with expected morphology and size. Here, an insightful review is provided by focusing on the recent development associated with the substrate engineering strategies for CVD preparation of large-scale 2D TMDs. First, the interaction between 2D TMDs and substrates, a key factor for the growth of high-quality materials, is systematically discussed by combining the latest theoretical calculations. Based on this, the effect of various substrate engineering approaches on the growth of large-area 2D TMDs is summarized in detail. Finally, the opportunities and challenges of substrate engineering for the future development of 2D TMDs are discussed. This review might provide deep insight into the controllable growth of high-quality 2D TMDs toward their industrial-scale practical applications.
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Affiliation(s)
- Shaohua Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Decai Ouyang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Na Zhang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yi Zhang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Akshay Murthy
- Superconducting Quantum Materials and Systems Division, Fermi National Accelerator Laboratory (FNAL), Batavia, IL, 60510, USA
| | - Yuan Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
- Shenzhen Huazhong University of Science and Technology Research Institute, Shenzhen, 518057, P. R. China
| | - Shiyuan Liu
- State Key Laboratory of Digital Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
- Shenzhen Huazhong University of Science and Technology Research Institute, Shenzhen, 518057, P. R. China
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8
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Li J, Ren Y, Li Z, Huang Y. Phase Engineering of Nonstoichiometric Cu 2-xSe as Anode for Aqueous Zn-Ion Batteries. ACS NANO 2023; 17:18507-18516. [PMID: 37710357 DOI: 10.1021/acsnano.3c06361] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/16/2023]
Abstract
Aqueous zinc-ion batteries (AZIBs) are receiving widespread attention due to their abundant resources, low material cost, and high safety. However, the susceptibility of Zn metal anodes to corrosion and hydrogen evolution limits their further practical applications. Replacing Zn metal with intercalation-type anode material and constructing rocking-chair-type batteries could be an effective way to significantly prolong the cycle life of AZIBs. Herein, we present copper selenide with different crystal phase structures through a facile redox reaction as an anode for AZIBs. By comparing and analyzing different copper selenide phases, it is found that the cubic Cu2-xSe shows superior structural stability and highly reversible Zn2+ storage. Theoretical calculation results further demonstrate that the cubic Cu2-xSe possesses an increased electrical conductivity, higher Zn2+ adsorption energy, and reduced diffusion barrier, thereby promoting the storage reversibility and (de)intercalation kinetics of the Zn2+ ion. Thus, the Cu2-xSe anode delivers a long-term service life of over 15 000 cycles and impressive cumulative capacity. Furthermore, the full-cells assembled with the MnO2/CNT cathode operate stably for over 1500 cycles at 6 mA cm-2 at a negative/positive (N/P) capacity ratio of ∼1.53. This work provides a more ideal Zn-metal-free anode, which helps to push the practical applications of AZIBs.
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Affiliation(s)
- Jianbo Li
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Yibin Ren
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Zhen Li
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Yunhui Huang
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
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9
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Yang F, Wei W, Dong X, Zhao Y, Chen J, Chen J, Zhang X, Li Y. Optoelectronic bio-synaptic plasticity on neotype kesterite memristor with switching ratio >104. J Chem Phys 2023; 159:114701. [PMID: 37712793 DOI: 10.1063/5.0167187] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/10/2023] [Accepted: 08/28/2023] [Indexed: 09/16/2023] Open
Abstract
Optoelectronic memristors hold the most potential for realizing next-generation neuromorphic computation; however, memristive devices that can integrate excellent resistive switching and both electrical-/light-induced bio-synaptic behaviors are still challenging to develop. In this study, an artificial optoelectronic synapse is proposed and realized using a kesterite-based memristor with Cu2ZnSn(S,Se)4 (CZTSSe) as the switching material and Mo/Ag as the back/top electrode. Benefiting from unique electrical features and a bi-layered structure of CZTSSe, the memristor exhibits highly stable nonvolatile resistive switching with excellent spatial uniformity, concentrated Set/Reset voltage distribution (variation <0.08/0.02 V), high On/Off ratio (>104), and long retention time (>104 s). A possible mechanism of the switching behavior in such a device is proposed. Furthermore, these memristors successfully achieve essential bio-synaptic functions under both electrical and various visible light (470-655 nm) stimulations, including electrical-induced excitatory postsynaptic current, paired pulse facilitation, long-term potentiation, long-term depression, spike-timing-dependent plasticity, as well as light-stimulated short-/long-term plasticity and learning-forgetting-relearning process. As such, the proposed neotype kesterite-based memristor demonstrates significant potential in facilitating artificial optoelectronic synapses and enabling neuromorphic computation.
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Affiliation(s)
- Fengxia Yang
- Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Wenbin Wei
- Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Xiaofei Dong
- Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Yun Zhao
- Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Jiangtao Chen
- Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Jianbiao Chen
- Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Xuqiang Zhang
- Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Yan Li
- Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
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10
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Assi DS, Huang H, Karthikeyan V, Theja VCS, de Souza MM, Xi N, Li WJ, Roy VAL. Quantum Topological Neuristors for Advanced Neuromorphic Intelligent Systems. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2300791. [PMID: 37340871 PMCID: PMC10460853 DOI: 10.1002/advs.202300791] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2023] [Revised: 04/02/2023] [Indexed: 06/22/2023]
Abstract
Neuromorphic artificial intelligence systems are the future of ultrahigh performance computing clusters to overcome complex scientific and economical challenges. Despite their importance, the advancement in quantum neuromorphic systems is slow without specific device design. To elucidate biomimicking mammalian brain synapses, a new class of quantum topological neuristors (QTN) with ultralow energy consumption (pJ) and higher switching speed (µs) is introduced. Bioinspired neural network characteristics of QTNs are the effects of edge state transport and tunable energy gap in the quantum topological insulator (QTI) materials. With augmented device and QTI material design, top notch neuromorphic behavior with effective learning-relearning-forgetting stages is demonstrated. Critically, to emulate the real-time neuromorphic efficiency, training of the QTNs is demonstrated with simple hand gesture game by interfacing them with artificial neural networks to perform decision-making operations. Strategically, the QTNs prove the possession of incomparable potential to realize next-gen neuromorphic computing for the development of intelligent machines and humanoids.
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Affiliation(s)
- Dani S. Assi
- Electronics and Nanoscale EngineeringJames Watt School of EngineeringUniversity of GlasgowGlasgowG12 8QQUK
| | - Hongli Huang
- Electronics and Nanoscale EngineeringJames Watt School of EngineeringUniversity of GlasgowGlasgowG12 8QQUK
| | - Vaithinathan Karthikeyan
- Electronics and Nanoscale EngineeringJames Watt School of EngineeringUniversity of GlasgowGlasgowG12 8QQUK
| | - Vaskuri C. S. Theja
- Materials Science and EngineeringCity University of Hong KongTat Chee AvenueHong KongHong Kong
| | | | - Ning Xi
- Industrial and Manufacturing Systems EngineeringThe University of Hong KongPokfulam RoadHong KongHong Kong
| | - Wen Jung Li
- Mechanical EngineeringCity University of Hong KongTat Chee AvenueHong KongHong Kong
| | - Vellaisamy A. L. Roy
- School of Science and TechnologyHong Kong Metropolitan UniversityHo Man TinHong KongHong Kong
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11
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Cao Z, Sun B, Zhou G, Mao S, Zhu S, Zhang J, Ke C, Zhao Y, Shao J. Memristor-based neural networks: a bridge from device to artificial intelligence. NANOSCALE HORIZONS 2023; 8:716-745. [PMID: 36946082 DOI: 10.1039/d2nh00536k] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
Since the beginning of the 21st century, there is no doubt that the importance of artificial intelligence has been highlighted in many fields, among which the memristor-based artificial neural network technology is expected to break through the limitation of von Neumann so as to realize the replication of the human brain by enabling strong parallel computing ability and efficient data processing and become an important way towards the next generation of artificial intelligence. A new type of nanodevice, namely memristor, which is based on the variability of its resistance value, not only has very important applications in nonvolatile information storage, but also presents obsessive progressiveness in highly integrated circuits, making it one of the most promising circuit components in the post-Moore era. In particular, memristors can effectively simulate neural synapses and build neural networks; thus, they can be applied for the preparation of various artificial intelligence systems. This study reviews the research progress of memristors in artificial neural networks in detail and highlights the structural advantages and frontier applications of neural networks based on memristors. Finally, some urgent problems and challenges in current research are summarized and corresponding solutions and future development trends are put forward.
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Affiliation(s)
- Zelin Cao
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China.
- Shaanxi International Joint Research Center for Applied Technology of Controllable Neutron Source, School of Science, Xijing University, Xi'an 710123, China
| | - Bai Sun
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China.
| | - Guangdong Zhou
- College of Artificial Intelligence, Brain-inspired Computing & Intelligent Control of Chongqing Key Lab, Southwest University, Chongqing 400715, China
| | - Shuangsuo Mao
- Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, Fujian Normal University, Fuzhou, Fujian 350117, China
| | - Shouhui Zhu
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
| | - Jie Zhang
- School of Electrical Engineering, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
| | - Chuan Ke
- School of Electrical Engineering, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
| | - Yong Zhao
- Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, Fujian Normal University, Fuzhou, Fujian 350117, China
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
- School of Electrical Engineering, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
| | - Jinyou Shao
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China.
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12
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Huang CH, Weng CY, Chen KH, Chou Y, Wu TL, Chou YC. Multiple-State Nonvolatile Memory Based on Ultrathin Indium Oxide Film via Liquid Metal Printing. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37202222 DOI: 10.1021/acsami.3c03002] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/20/2023]
Abstract
In this work, the ultrathin two-dimensional (2D) indium oxide (InOx) with a large area of more than 100 μm2 and a high degree of uniformity was automatically peeled off from indium by the liquid-metal printing technique. Raman and optical measurements revealed that 2D-InOx has a polycrystalline cubic structure. By altering the printing temperature which affects the crystallinity of 2D-InOx, the mechanism of the existence and disappearance of memristive characteristics was established. The tunable characteristics of the 2D-InOx memristor with reproducible one-order switching was manifest from the electrical measurements. Further adjustable multistate characteristics of the 2D-InOx memristor and its resistance switching mechanism were evaluated. A detailed examination of the memristive process demonstrated the Ca2+ mimic dynamic in 2D-InOx memristors as well as the fundamental principles underlying biological and artificial synapses. These surveys allow us to comprehend a 2D-InOx memristor using the liquid-metal printing technique and could be applied to future neuromorphic applications and in the field of revolutionary 2D material exploration.
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Affiliation(s)
- Chang-Hsun Huang
- Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Chen-Yuan Weng
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Kuan-Hung Chen
- Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Yi Chou
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Tian-Li Wu
- International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Yi-Chia Chou
- Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
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13
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Cheng R, Kum HS, He J. Adding spinels to the magnetic 2D toolkit. Sci Bull (Beijing) 2023:S2095-9273(23)00310-9. [PMID: 37211488 DOI: 10.1016/j.scib.2023.05.003] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Affiliation(s)
- Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, China; Key Laboratory for Special Functional Materials of Ministry of Education, Henan University, Kaifeng 475004, China.
| | - Hyun S Kum
- Department of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, South Korea.
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, China; Wuhan Institute of Quantum Technology, Wuhan 430206, China.
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14
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Jiang J, Cheng R, Feng W, Yin L, Wen Y, Wang Y, Cai Y, Liu Y, Wang H, Zhai B, Liu C, He J, Wang Z. Van der Waals Epitaxy Growth of 2D Single-Element Room-Temperature Ferromagnet. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211701. [PMID: 36807945 DOI: 10.1002/adma.202211701] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/14/2022] [Indexed: 05/12/2023]
Abstract
2D single-element materials, which are pure and intrinsically homogeneous on the nanometer scale, can cut the time-consuming material-optimization process and circumvent the impure phase, bringing about opportunities to explore new physics and applications. Herein, for the first time, the synthesis of ultrathin cobalt single-crystalline nanosheets with a sub-millimeter scale via van der Waals epitaxy is demonstrated. The thickness can be as low as ≈6 nm. Theoretical calculations reveal their intrinsic ferromagnetic nature and epitaxial mechanism: that is, the synergistic effect between van der Waals interactions and surface energy minimization dominates the growth process. Cobalt nanosheets exhibit ultrahigh blocking temperatures above 710 K and in-plane magnetic anisotropy. Electrical transport measurements further reveal that cobalt nanosheets have significant magnetoresistance (MR) effect, and can realize a unique coexistence of positive MR and negative MR under different magnetic field configurations, which can be attributed to the competition and cooperation effect among ferromagnetic interaction, orbital scattering, and electronic correlation. These results provide a valuable case for synthesizing 2D elementary metal crystals with pure phase and room-temperature ferromagnetism and pave the way for investigating new physics and related applications in spintronics.
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Affiliation(s)
- Jian Jiang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, And School of Physical and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, And School of Physical and Technology, Wuhan University, Wuhan, 430072, P. R. China
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Wenyong Feng
- The State Key Lab of Optoelectronic Materials & Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510275, P. R. China
| | - Lei Yin
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, And School of Physical and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, And School of Physical and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Yanrong Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Yuchen Cai
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Yong Liu
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, And School of Physical and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Hao Wang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, And School of Physical and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Baoxing Zhai
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, And School of Physical and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Chuansheng Liu
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, And School of Physical and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, And School of Physical and Technology, Wuhan University, Wuhan, 430072, P. R. China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, P. R. China
| | - Zhenxing Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
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15
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Wang H, Zhan G, Tang C, Yang D, Liu W, Wang D, Wu Y, Wang H, Liu K, Li J, Huang M, Chen K. Scalable Edge-Oriented Metallic Two-Dimensional Layered Cu 2Te Arrays for Electrocatalytic CO 2 Methanation. ACS NANO 2023; 17:4790-4799. [PMID: 36779886 DOI: 10.1021/acsnano.2c11227] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Copper-based nanomaterials are compelling for high-efficient, low-cost electrocatalytic CO2 reduction reaction (CO2RR) due to their exotic electronic and structural properties. However, controllable preparation of copper-based two-dimensional (2D) materials with abundant catalytically active sites, that guarantee high CO2RR performance, remains challenging, especially on a large scale. Here, an in situ vertical growth of scalable metallic 2D Cu2Te nanosheet arrays on commercial copper foils is demonstrated for efficient CO2-to-CH4 electrocatalysis. The edge-oriented growth of Cu2Te nanosheets with tunable sizes and thicknesses is facilely attained by a two-step process of chemical etching and chemical vapor deposition. These active sites abounding on highly exposed edges of Cu2Te nanosheets greatly promote the electroreduction of CO2 into CH4 at a potential as low as -0.4 V (versus the reversible hydrogen electrode), while suppressing hydrogen evolution reaction. When a flow cell is employed to accelerate the mass transfer, the faradaic efficiency reaches ∼63% at an applied current density of 300 mA cm-2. These findings will provide great possibilities for developing scalable, energy-efficient Cu-based CO2RR electrocatalysts.
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Affiliation(s)
- Hongqin Wang
- Center for the Physics of Low-Dimensional Materials, Henan Joint International Research Laboratory of New Energy Materials and Devices, School of Physics and Electronics, Henan University, Kaifeng 475004, China
| | - Guangming Zhan
- College of Chemistry, Central China Normal University, Wuhan 430079, China
| | - Cun Tang
- Center for the Physics of Low-Dimensional Materials, Henan Joint International Research Laboratory of New Energy Materials and Devices, School of Physics and Electronics, Henan University, Kaifeng 475004, China
| | - Di Yang
- Center for the Physics of Low-Dimensional Materials, Henan Joint International Research Laboratory of New Energy Materials and Devices, School of Physics and Electronics, Henan University, Kaifeng 475004, China
| | - Weitao Liu
- Center for the Physics of Low-Dimensional Materials, Henan Joint International Research Laboratory of New Energy Materials and Devices, School of Physics and Electronics, Henan University, Kaifeng 475004, China
| | - Dongyang Wang
- Center for the Physics of Low-Dimensional Materials, Henan Joint International Research Laboratory of New Energy Materials and Devices, School of Physics and Electronics, Henan University, Kaifeng 475004, China
| | - Yunrou Wu
- Center for the Physics of Low-Dimensional Materials, Henan Joint International Research Laboratory of New Energy Materials and Devices, School of Physics and Electronics, Henan University, Kaifeng 475004, China
| | - Huan Wang
- Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Renewable Energy Conversion and Storage Center (RECAST), College of Chemistry, Nankai University, Tianjin 300071, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Jie Li
- Center for the Physics of Low-Dimensional Materials, Henan Joint International Research Laboratory of New Energy Materials and Devices, School of Physics and Electronics, Henan University, Kaifeng 475004, China
| | - Mingju Huang
- Center for the Physics of Low-Dimensional Materials, Henan Joint International Research Laboratory of New Energy Materials and Devices, School of Physics and Electronics, Henan University, Kaifeng 475004, China
| | - Ke Chen
- Center for the Physics of Low-Dimensional Materials, Henan Joint International Research Laboratory of New Energy Materials and Devices, School of Physics and Electronics, Henan University, Kaifeng 475004, China
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16
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Dong X, Li S, Sun H, Jian L, Wei W, Chen J, Zhao Y, Chen J, Zhang X, Li Y. Optoelectronic Memristive Synapse Behavior for the Architecture of Cu 2ZnSnS 4@BiOBr Embedded in Poly(methyl methacrylate). J Phys Chem Lett 2023; 14:1512-1520. [PMID: 36745109 DOI: 10.1021/acs.jpclett.2c03939] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The great potential of artificial optoelectronic devices that are capable of mimicking biosynapse functions in brain-like neuromorphic computing applications has aroused extensive interest, and the architecture design is decisive yet challenging. Herein, a new architecture of p-type Cu2ZnSnS4@BiOBr nanosheets embedded in poly(methyl methacrylate) (PMMA) films (CZTS@BOB-PMMA) is presented acting as a switching layer, which not only shows the bipolar resistive switching features (SET/RESET voltages, ∼ -0.93/+1.35 V; retention, >104 s) and electrical- and near-infrared light-induced synapse plasticity but also demonstrates electrical-driven excitatory postsynaptic current, spiking-time-dependent plasticity, paired pulse facilitation, long-term plasticity, long- and short-term memory, and "learning-forgetting-learning" behaviors. The approach is a rewarding attempt to broaden the research of optoelectric controllable memristive devices for building neuromorphic architectures mimicking human brain functionalities.
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Affiliation(s)
- Xiaofei Dong
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou730070, China
| | - Siyuan Li
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou730070, China
| | - Hao Sun
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou730070, China
| | - Lijuan Jian
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou730070, China
| | - Wenbin Wei
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou730070, China
| | - Jianbiao Chen
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou730070, China
| | - Yun Zhao
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou730070, China
| | - Jiangtao Chen
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou730070, China
| | - Xuqiang Zhang
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou730070, China
| | - Yan Li
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou730070, China
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17
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Giri A, Park G, Jeong U. Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications. Chem Rev 2023; 123:3329-3442. [PMID: 36719999 PMCID: PMC10103142 DOI: 10.1021/acs.chemrev.2c00455] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/01/2023]
Abstract
The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.
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Affiliation(s)
- Anupam Giri
- Department of Chemistry, Faculty of Science, University of Allahabad, Prayagraj, UP-211002, India
| | - Gyeongbae Park
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea.,Functional Materials and Components R&D Group, Korea Institute of Industrial Technology, Gwahakdanji-ro 137-41, Sacheon-myeon, Gangneung, Gangwon-do25440, Republic of Korea
| | - Unyong Jeong
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea
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18
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Duan H, Cheng S, Qin L, Zhang X, Xie B, Zhang Y, Jie W. Low-Power Memristor Based on Two-Dimensional Materials. J Phys Chem Lett 2022; 13:7130-7138. [PMID: 35900941 DOI: 10.1021/acs.jpclett.2c01962] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The memristor is an excellent candidate for nonvolatile memory and neuromorphic computing. Recently, two-dimensional (2D) materials have been developed for use in memristors with high-performance resistive switching characteristics, such as high on/off ratios, low SET/RESET voltages, good retention and endurance, fast switching speed, and low power and energy consumption. Low-power memristors are highly desired for recent fast-speed and energy-efficient artificial neuromorphic networks. This Perspective focuses on the recent progress of low-power memristors based on 2D materials, providing a condensed overview of relevant developments in memristive performance, physical mechanism, material modification, and device assembly as well as potential applications. The detailed research status of memristors has been reviewed based on different 2D materials from insulating hexagonal boron nitride, semiconducting transition metal dichalcogenides, to some newly developed 2D materials. Furthermore, a brief summary introducing the perspectives and challenges is included, with the aim of providing an insightful guide for this research field.
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Affiliation(s)
- Huan Duan
- College of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, China
| | - Siqi Cheng
- College of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, China
| | - Ling Qin
- College of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, China
| | - Xuelian Zhang
- College of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, China
| | - Bingyang Xie
- College of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, China
| | - Yang Zhang
- Institute of Modern Optics & Tianjin Key Laboratory of Micro-Scale Optical Information Science and Technology, Nankai University, Tianjin 300071, China
| | - Wenjing Jie
- College of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, China
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19
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Ma Z, Ge J, Chen W, Cao X, Diao S, Liu Z, Pan S. Reliable Memristor Based on Ultrathin Native Silicon Oxide. ACS APPLIED MATERIALS & INTERFACES 2022; 14:21207-21216. [PMID: 35476399 DOI: 10.1021/acsami.2c03266] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Memristors based on two-dimensional (2D) materials can exhibit great scalability and ultralow power consumption, yet the structural and thickness inhomogeneity of ultrathin electrolytes lowers the production yield and reliability of devices. Here, we report that the self-limiting amorphous SiOx (∼2.7 nm) provides a perfect atomically thin electrolyte with high uniformity, featuring a record high production yield. With the guidance of physical modeling, we reveal that the atomic thickness of SiOx enables anomalous resistive switching with a transition to an analog quasi-reset mode, where the filament stability can be further enhanced using Ag-Au nanocomposite electrodes. Such a picojoule memristor shows record low switching variabilities (C2C and D2D variation down to 1.1 and 2.6%, respectively), good retention at a few microsiemens, and high conductance-updating linearity, constituting key metrics for analog neural networks. In addition, the stable high-resistance state is found to be an excellent source for true random numbers of Gaussian distribution. This work opens up opportunities in mass production of Si-compatible memristors for ultradense neuromorphic and security hardware.
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Affiliation(s)
- Zelin Ma
- Research Center for Advanced Information Materials (CAIM), Huangpu Research & Graduate School of Guangzhou University, Guangzhou 510555, China
| | - Jun Ge
- Research Center for Advanced Information Materials (CAIM), Huangpu Research & Graduate School of Guangzhou University, Guangzhou 510555, China
- Solid State Physics & Material Research Laboratory, School of Physics and Material Science, Guangzhou University, Guangzhou 510006, China
| | - Wanjun Chen
- Solid State Physics & Material Research Laboratory, School of Physics and Material Science, Guangzhou University, Guangzhou 510006, China
| | - Xucheng Cao
- Research Center for Advanced Information Materials (CAIM), Huangpu Research & Graduate School of Guangzhou University, Guangzhou 510555, China
| | - Shanqing Diao
- Research Center for Advanced Information Materials (CAIM), Huangpu Research & Graduate School of Guangzhou University, Guangzhou 510555, China
| | - Zhiyu Liu
- Research Center for Advanced Information Materials (CAIM), Huangpu Research & Graduate School of Guangzhou University, Guangzhou 510555, China
- Solid State Physics & Material Research Laboratory, School of Physics and Material Science, Guangzhou University, Guangzhou 510006, China
| | - Shusheng Pan
- Research Center for Advanced Information Materials (CAIM), Huangpu Research & Graduate School of Guangzhou University, Guangzhou 510555, China
- Solid State Physics & Material Research Laboratory, School of Physics and Material Science, Guangzhou University, Guangzhou 510006, China
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