Temperature-Insensitive Efficient Inorganic Perovskite Photovoltaics by Bulk Heterojunctions

Dendrimer Modification Strategy Based on the Understanding of the Photovoltaic Mechanism of a Perovskite Device under Full Sun and Indoor Light

The wide-band-gap inorganic CsPbI₂Br perovskite material provides a highly matched absorption range with the indoor light spectrum and is expected to be used in the fabrication of highly efficient indoor photovoltaic cells (IPVs) and self-powered low-power Internet of Things (IoT) sensors. However, the defects that cause nonradiative recombination and ion migration are assumed to form leakage loss channels, resulting in a severe impact on the open-circuit voltage (V_OC) and the fill factor (FF) of IPVs. Herein, we introduce poly(amidoamine) (PAMAM) dendrimers with multiple passivation sites to fully repair the leakage channels in the devices, taking into account the characteristics of IPVs that are extremely sensitive to nonradiative recombination and shunt resistance. The as-optimized IPVs demonstrate a promising PCE of 35.71% under a fluorescent light source (1000 lux), with V_OC increased from 0.99 to 1.06 V and FF improved from 75.21 to 84.39%. The present work provides insight into the photovoltaic mechanism of perovskites under full sun and indoor light, which provides guidance for perovskite photovoltaic technology with industrialization prospects.

Strategies for the preparation of high-performance inorganic mixed-halide perovskite solar cells

Inorganic halide perovskites have attracted significant attention in the field of photovoltaics (PV) in recent years due to their superior intrinsic thermal stability and excellent theoretical power conversion efficiency (PCE). CsPbI3 with a bandgap of ∼1.7 eV is considered to be the most potential candidate for PV application. However, bulk CsPbI3 films exhibit poor phase stability. The substitution of some iodide ions with bromide/chloride in CsPbI3 results in the formation of mixed-halide CsPbX3 perovskites, which exhibit a good balance between phase stability and efficiency. The halogen-tunable mixed-halide inorganic perovskites have a bandgap matching the sunlight region and show great potential for application in multi-junction tandem and semitransparent solar cells. Herein, the progress of mixed-halide CsPbX3 PSCs is systematically reviewed, including CsPbI x Br y Cl3-x-y - and CsPbIBr2-based IPSCs. In the case of CsPbIBr2 IPSCs, we introduce the low-temperature deposition of CsPbIBr2 films, doping methods for the preparation of high-quality CsPbIBr2 films and strategies for improving the performance of solar cells. Furthermore, the mechanism of crystallization/interface engineering for the preparation of high-quality CsPbIBr2 films and efficient solar cells devices is emphasized. Finally, the development direction of further improving the PV performance and commercialization of mixed-halide IPSCs are summarized and prospected.

Universal Dynamic Liquid Interface for Healing Perovskite Solar Cells

Healing charge-selective contact interfaces in perovskite solar cells (PSCs) highly determines the power conversion efficiency (PCE) and stability. However, the state-of-the-art strategies are often static by one-off formation of a functional interlayer, which delivers fixed interfacial properties during the subsequent operation. As a result, defects formed in-service will gradually deteriorate the photovoltaic performances. Herein, a dynamic healing interface (DHI) is presented by incorporating a low-melting-point small molecule onto perovskite film surface for highly efficient and stable PSCs. Arising from the reduced non-radiative recombination, the DHI boosts the PCE to 12.05% for an all-inorganic CsPbIBr₂ solar cell and 14.14% for a CsPbI₂ Br cell, as well as 23.37% for an FA_0.92 MA_0.08 PbI₃ (FA = formamidinium, MA = methylammonium) cell. The solid-to-liquid phase conversion of DHI at elevated temperature causes a longitudinal infiltration into the bulk perovskite film to maximize the charge extraction, passivate defects at grain boundaries, and suppress ion migration. Furthermore, the stability is remarkably enhanced under air, heat, and persistent light-irradiation conditions, paving a universal strategy for advanced perovskite-based optoelectronics.