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Li T, Deng S, Liu H, Chen J. Insights into Strain Engineering: From Ferroelectrics to Related Functional Materials and Beyond. Chem Rev 2024; 124:7045-7105. [PMID: 38754042 DOI: 10.1021/acs.chemrev.3c00767] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/18/2024]
Abstract
Ferroelectrics have become indispensable components in various application fields, including information processing, energy harvesting, and electromechanical conversion, owing to their unique ability to exhibit electrically or mechanically switchable polarization. The distinct polar noncentrosymmetric lattices of ferroelectrics make them highly responsive to specific crystal structures. Even slight changes in the lattice can alter the polarization configuration and response to external fields. In this regard, strain engineering has emerged as a prevalent regulation approach that not only offers a versatile platform for structural and performance optimization within ferroelectrics but also unlocks boundless potential in various functional materials. In this review, we systematically summarize the breakthroughs in ferroelectric-based functional materials achieved through strain engineering and progress in method development. We cover research activities ranging from fundamental attributes to wide-ranging applications and novel functionalities ranging from electromechanical transformation in sensors and actuators to tunable dielectric materials and information technologies, such as transistors and nonvolatile memories. Building upon these achievements, we also explore the endeavors to uncover the unprecedented properties through strain engineering in related chemical functionalities, such as ferromagnetism, multiferroicity, and photoelectricity. Finally, through discussions on the prospects and challenges associated with strain engineering in the materials, this review aims to stimulate the development of new methods for strain regulation and performance boosting in functional materials, transcending the boundaries of ferroelectrics.
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Affiliation(s)
- Tianyu Li
- Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Shiqing Deng
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Hui Liu
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Jun Chen
- Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
- Hainan University, Haikou 570228, China
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Guo Y, Peng B, Lu G, Dong G, Yang G, Chen B, Qiu R, Liu H, Zhang B, Yao Y, Zhao Y, Li S, Ding X, Sun J, Liu M. Remarkable flexibility in freestanding single-crystalline antiferroelectric PbZrO 3 membranes. Nat Commun 2024; 15:4414. [PMID: 38782889 PMCID: PMC11116490 DOI: 10.1038/s41467-024-47419-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/09/2023] [Accepted: 04/02/2024] [Indexed: 05/25/2024] Open
Abstract
The ultrahigh flexibility and elasticity achieved in freestanding single-crystalline ferroelectric oxide membranes have attracted much attention recently. However, for antiferroelectric oxides, the flexibility limit and fundamental mechanism in their freestanding membranes are still not explored clearly. Here, we successfully fabricate freestanding single-crystalline PbZrO3 membranes by a water-soluble sacrificial layer technique. They exhibit good antiferroelectricity and have a commensurate/incommensurate modulated microstructure. Moreover, they also have good shape recoverability when bending with a small radius of curvature (about 2.4 μm for the thickness of 120 nm), corresponding to a bending strain of 2.5%. They could tolerate a maximum bending strain as large as 3.5%, far beyond their bulk counterpart. Our atomistic simulations reveal that this remarkable flexibility originates from the antiferroelectric-ferroelectric phase transition with the aid of polarization rotation. This study not only suggests the mechanism of antiferroelectric oxides to achieve high flexibility but also paves the way for potential applications in flexible electronics.
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Affiliation(s)
- Yunting Guo
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Bin Peng
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China.
| | - Guangming Lu
- School of Environmental and Material Engineering, Yantai University, Yantai, 264005, China
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Guohua Dong
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Guannan Yang
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Bohan Chen
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Ruibin Qiu
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Haixia Liu
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Butong Zhang
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Yufei Yao
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Yanan Zhao
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Suzhi Li
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China.
| | - Xiangdong Ding
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Jun Sun
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Ming Liu
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China.
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Xu T, Wu C, Zheng S, Wang Y, Wang J, Hirakata H, Kitamura T, Shimada T. Mechanical Rippling for Diverse Ferroelectric Topologies in Otherwise Nonferroelectric SrTiO_{3} Nanofilms. PHYSICAL REVIEW LETTERS 2024; 132:086801. [PMID: 38457703 DOI: 10.1103/physrevlett.132.086801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/13/2023] [Revised: 12/18/2023] [Accepted: 01/12/2024] [Indexed: 03/10/2024]
Abstract
Polar topological structures such as skyrmions and merons have become an emerging research field due to their rich functionalities and promising applications in information storage. Up to now, the obtained polar topological structures are restricted to a few limited ferroelectrics with complex heterostructures, limiting their large-scale practical applications. Here, we circumvent this limitation by utilizing a nanoscale ripple-generated flexoelectric field as a universal means to create rich polar topological configurations in nonpolar nanofilms in a controllable fashion. Our extensive phase-field simulations show that a rippled SrTiO_{3} nanofilm with a single bulge activates polarizations that are stabilized in meron configurations, which further undergo topological transitions to Néel-type and Bloch-type skyrmions upon varying the geometries. The formation of these topologies originates from the curvature-dependent flexoelectric field, which extends beyond the common mechanism of geometric confinement that requires harsh energy conditions and strict temperature ranges. We further demonstrate that the rippled nanofilm with three-dimensional ripple patterns can accommodate other unreported modulated phases of ferroelectric topologies, which provide ferroelectric analogs to the complex spin topologies in magnets. The present study not only unveils the intriguing nanoscale electromechanical properties but also opens exciting opportunities to design various functional topological phenomena in flexible materials.
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Affiliation(s)
- Tao Xu
- Department of Mechanical Engineering and Science, Kyoto University, Nishikyo-ku, Kyoto 615-8540, Japan
| | - Chengsheng Wu
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- College of Materials Science and Engineering, Zhejiang University of Technology, Hangzhou 310014, China
| | - Sizheng Zheng
- Department of Engineering Mechanics, School of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310027, China
| | - Yu Wang
- Department of Mechanical Engineering and Science, Kyoto University, Nishikyo-ku, Kyoto 615-8540, Japan
| | - Jie Wang
- Department of Engineering Mechanics, School of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310027, China
- Zhejiang Laboratory, Hangzhou 311100, Zhejiang, China
| | - Hiroyuki Hirakata
- Department of Mechanical Engineering and Science, Kyoto University, Nishikyo-ku, Kyoto 615-8540, Japan
| | - Takayuki Kitamura
- Department of Mechanical Engineering and Science, Kyoto University, Nishikyo-ku, Kyoto 615-8540, Japan
| | - Takahiro Shimada
- Department of Mechanical Engineering and Science, Kyoto University, Nishikyo-ku, Kyoto 615-8540, Japan
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Kim D, Kim M, Reidt S, Han H, Baghizadeh A, Zeng P, Choi H, Puigmartí-Luis J, Trassin M, Nelson BJ, Chen XZ, Pané S. Shape-memory effect in twisted ferroic nanocomposites. Nat Commun 2023; 14:750. [PMID: 36765045 PMCID: PMC9918508 DOI: 10.1038/s41467-023-36274-w] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/25/2022] [Accepted: 01/20/2023] [Indexed: 02/12/2023] Open
Abstract
The shape recovery ability of shape-memory alloys vanishes below a critical size (~50 nm), which prevents their practical applications at the nanoscale. In contrast, ferroic materials, even when scaled down to dimensions of a few nanometers, exhibit actuation strain through domain switching, though the generated strain is modest (~1%). Here, we develop freestanding twisted architectures of nanoscale ferroic oxides showing shape-memory effect with a giant recoverable strain (>8%). The twisted geometrical design amplifies the strain generated during ferroelectric domain switching, which cannot be achieved in bulk ceramics or substrate-bonded thin films. The twisted ferroic nanocomposites allow us to overcome the size limitations in traditional shape-memory alloys and open new avenues in engineering large-stroke shape-memory materials for small-scale actuating devices such as nanorobots and artificial muscle fibrils.
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Affiliation(s)
- Donghoon Kim
- grid.5801.c0000 0001 2156 2780Multi-Scale Robotics Lab, Institute of Robotics and Intelligent Systems, ETH Zurich, Tannenstrasse 3, 8092 Zurich, Switzerland
| | - Minsoo Kim
- grid.5801.c0000 0001 2156 2780Multi-Scale Robotics Lab, Institute of Robotics and Intelligent Systems, ETH Zurich, Tannenstrasse 3, 8092 Zurich, Switzerland
| | - Steffen Reidt
- grid.410387.9IBM Research Zurich, Säumerstrasse 4, 8803 Rüschilikon, Switzerland
| | - Hyeon Han
- grid.450270.40000 0004 0491 5558Max Plank Institute of Microstructure Physics, 06120 Halle (Saale), Germany
| | - Ali Baghizadeh
- grid.5801.c0000 0001 2156 2780The Scientific Center for Optical and Electron Microscopy (ScopeM), ETH Zurich, 8093 Zurich, Switzerland
| | - Peng Zeng
- grid.5801.c0000 0001 2156 2780The Scientific Center for Optical and Electron Microscopy (ScopeM), ETH Zurich, 8093 Zurich, Switzerland
| | - Hongsoo Choi
- grid.417736.00000 0004 0438 6721Department of Robotics & Mechatronics Engineering, DGIST-ETH Microrobotics Research Center, Daegu Gyeong-buk Institute of Science and Technology (DGIST), Daegu, Republic of Korea
| | - Josep Puigmartí-Luis
- grid.5841.80000 0004 1937 0247Departament de Ciència dels Materials i Química Física, Institut de Química Teòrica i Computacional, University of Barcelona (UB), 08028 Barcelona, Spain ,grid.425902.80000 0000 9601 989XInstitució Catalana de Recerca i Estudis Avançats (ICREA); Pg. Lluís Companys 23, Barcelona, 08010 Spain
| | - Morgan Trassin
- grid.5801.c0000 0001 2156 2780Department of Materials, ETH Zurich, 8093 Zurich, Switzerland
| | - Bradley J. Nelson
- grid.5801.c0000 0001 2156 2780Multi-Scale Robotics Lab, Institute of Robotics and Intelligent Systems, ETH Zurich, Tannenstrasse 3, 8092 Zurich, Switzerland
| | - Xiang-Zhong Chen
- Multi-Scale Robotics Lab, Institute of Robotics and Intelligent Systems, ETH Zurich, Tannenstrasse 3, 8092, Zurich, Switzerland.
| | - Salvador Pané
- Multi-Scale Robotics Lab, Institute of Robotics and Intelligent Systems, ETH Zurich, Tannenstrasse 3, 8092, Zurich, Switzerland.
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5
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Cheng Y, Dong G, Li Y, Yang G, Zhang B, Guan M, Zhou Z, Liu M. Strain Modulation of Perpendicular Magnetic Anisotropy in Wrinkle-Patterned (Co/Pt) 5/BaTiO 3 Magnetoelectric Heterostructures. ACS NANO 2022; 16:11291-11299. [PMID: 35848713 DOI: 10.1021/acsnano.2c04754] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The rapid development of spintronics requires the devices to be flexible, to be used in wearable electronics, and controllable, to be used with magnetoelectric (ME) structures. However, the clamping effect inevitably leads to a decreased ME effect on the rigid substrate, and it remains challenging to directly prepare high-quality ferroelectric (FE) membranes on the widely used flexible substrate such as MICA or polyimide (PI). Here, periodic wrinkle-patterned flexible (Co/Pt)5/BaTiO3 (BTO) perpendicular magnetic anisotropy (PMA) heterostructures were prepared using the water-soluble method. The high-quality single-crystal BTO membrane ensures that intricate wrinkles do not fracture and a high ME coefficient is achievable. The transferred sample that is released from the clamping effect shows an enhanced ME effect in both in-plane and out-of-plane directions, with the ME coefficient reaching up to 68 Oe °C-1. The ferromagnetic resonance (FMR) field of the flexible sample can be tuned by tensile strain up to 272 Oe. The finely controlled wrinkle shows periodic strain variations at peak and valley regions that switch the PMA magnetic domain motion as an effective control method. The proposed ultraflexible wrinkle sample shows great potential for combining multiple magnetization tuning approaches, allowing it to potentially serve as a tunable high-density 3D storage prototype.
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Affiliation(s)
- Yuxin Cheng
- The Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials, the International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an 710049, China
| | - Guohua Dong
- The Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials, the International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an 710049, China
| | - Yaojin Li
- The Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials, the International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an 710049, China
| | - Guannan Yang
- The Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials, the International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an 710049, China
| | - Butong Zhang
- The Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials, the International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an 710049, China
| | - Mengmeng Guan
- The Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials, the International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an 710049, China
| | - Ziyao Zhou
- The Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials, the International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an 710049, China
| | - Ming Liu
- The Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials, the International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an 710049, China
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