Ag2 Q-Based (Q = S, Se, Te) Silver Chalcogenide Thermoelectric Materials

Shortwave-Infrared Silver Chalcogenide Quantum Dots for Optoelectronic Devices

Silver chalcogenide (Ag2X, X = S, Se, Te) semiconductor quantum dots (QDs) have been extensively studied owing to their short-wave infrared (SWIR, 900-2500 nm) excitation and emission along with lower solubility product constant and environmentally benign nature. However, their unsatisfactory photoluminescence quantum yields (PLQYs) make it difficult to obtain optoelectronic devices with high performances. To tackle this challenge, researchers have made great efforts to develop valid strategies to improve the PLQYs of SWIR Ag2X QDs by suppressing their nonradiative recombination of excitons. In this Perspective, we summarize the significant approaches of heteroatom doping and surface passivation to enhance the PLQYs of SWIR Ag2X QDs, and we conclude their application in high-efficiency optoelectronic devices. Finally, we examine the future trends and promising opportunities of Ag2X QDs with regard to their optical properties and optoelectronics. We believe that this Perspective will serve as a valuable reference for future advancement in the synthesis and application of SWIR Ag2X QDs.

Decoupled electron-phonon transport in Ag2Se thermoelectric materials through constructing TiO2/MoS2 co-decorated cell-membrane-mimic grain boundaries

Ag2Se has emerged as a promising n-type thermoelectric material; however, its application is limited mainly due to the strongly coupled charge carrier and phonon transport. Enhancing phonon scattering by constructing interfacial complexes often results in low carrier mobility due to its strong carrier scattering resulting from the high energy barrier at the multiphase interface. Inspired by the cell membrane with selective permeability, we construct bio-mimic grain boundaries with TiO2 and MoS2 co-decoration in Ag2Se to decouple electron scattering from strong phonon scattering. The nanostructured TiO2 with a high dielectric constant screens the interfacial Coulomb potential, ensuring efficient carrier transport and reducing the grain boundary barriers, while the few-layer MoS2 provides significant phonon scattering to further reduce the thermal conductivity. This method effectively enhances the zT value of Ag2Se by as much as 60% and also can significantly enhance the theoretical output performance of the thermoelectric device, which highlights the effectiveness of the bio-mimic grain boundary engineering strategy.

Van der Waals semiconductor InSe plastifies by martensitic transformation

Inorganic semiconductor materials are crucial for modern technologies, but their brittleness and limited processability hinder the development of flexible, wearable, and miniaturized electronics. The recent discovery of room-temperature plasticity in some inorganic semiconductors offers a promising solution, but the deformation mechanisms remain controversial. Here, we investigate the deformation of indium selenide, a two-dimensional van der Waals semiconductor with substantial plasticity. By developing a machine-learned deep potential, we perform atomistic simulations that capture the deformation features of hexagonal indium selenide upon out-of-plane compression. Unexpectedly, we find that indium selenide plastifies through a martensitic transformation; that is, the layered hexagonal structure is converted to a tetragonal lattice with specific orientation relationship. This observation is corroborated by high-resolution experimental observations and theory. It suggests a change of paradigm, where the design of new plastically deformable inorganic semiconductors can focus on compositions and structures that facilitate phase transformations, going beyond the conventional dislocation slip.

Thermoelectric Materials and Devices for Advanced Biomedical Applications

Thermoelectrics (TEs), enabling the direct conversion between heat and electrical energy, have demonstrated extensive application potential in biomedical fields. Herein, the mechanism of the TE effect, recent developments in TE materials, and the biocompatibility assessment of TE materials are provided. In addition to the fundamentals of TEs, a timely and comprehensive review of the recent progress of advanced TE materials and their applications is presented, including wearable power generation, personal thermal management, and biosensing. In addition, the new-emerged medical applications of TE materials in wound healing, disease treatment, antimicrobial therapy, and anti-cancer therapy are thoroughly reviewed. Finally, the main challenges and future possibilities are outlined for TEs in biomedical fields, as well as their material selection criteria for specific application scenarios. Together, these advancements can provide innovative insights into the development of TEs for broader applications in biomedical fields.

Deviceization of high-performance and flexible Ag2Se films for electronic skin and servo rotation angle control

Ag2Se shows significant potential for near-room-temperature thermoelectric applications, but its performance and device design are still evolving. In this work, we design a novel flexible Ag2Se thin-film-based thermoelectric device with optimized electrode materials and structure, achieving a high output power density of over 65 W m-2 and a normalized power density up to 3.68 μW cm-2 K-2 at a temperature difference of 42 K. By fine-tuning vapor selenization time, we strengthen the (013) orientation and carrier mobility of Ag2Se films, reducing excessive Ag interstitials and achieving a power factor of over 29 μW cm-1 K-2 at 393 K. A protective layer boosts flexibility of the thin film, retaining 90% performance after 1000 bends at 60°. Coupled with p-type Sb2Te3 thin films and rational simulations, the device shows rapid human motion response and precise servo motor control, highlighting the potential of high-performance Ag2Se thin films in advanced applications.

Sn-Doping-Induced Biphasic Structure Advances Ductile Ag2S-Based Thermoelectrics

Due to its inherent ductility, Ag2S shows promise as a flexible thermoelectric material for harnessing waste heat from diverse sources. However, its thermoelectric performance remains subpar, and existing enhancement strategies often compromise its ductility. In this study, a novel Sn-doping-induced biphasic structuring approach is introduced to synergistically control electron and phonon transport. Specifically, Sn-doping is incorporated into Ag2S0.7Se0.3 to form a biphasic composition comprising (Ag, Sn)2S0.7Se0.3 as the primary phase and Ag2S0.7Se0.3 as the secondary phase. This biphasic configuration achieves a competitive figure-of-merit ZT of 0.42 at 343 K while retaining exceptional ductility, exceeding 90%. The dominant (Ag, Sn)2S0.7Se0.3 phase bolsters the initially low carrier concentration, with interfacial boundaries between the phases effectively mitigating carrier scattering and promoting carrier mobility. Consequently, the optimized power factor reaches 5 µW cm-1 K-2 at 343 K. Additionally, the formation of the biphasic structure induces diverse micro/nano defects, suppressing lattice thermal conductivity to a commendable 0.18 W m-1 K-1, thereby achieving optimized thermoelectric performance. As a result, a four-leg in-plane flexible thermoelectric device is fabricated, exhibiting a maximum power density of ≈49 µW cm-2 under the temperature difference of 30 K, much higher than that of organic-based flexible thermoelectric devices.

Advancing flexible thermoelectrics for integrated electronics

With the increasing demand for energy and the climate challenges caused by the consumption of traditional fuels, there is an urgent need to accelerate the adoption of green and sustainable energy conversion and storage technologies. The integration of flexible thermoelectrics with other various energy conversion technologies plays a crucial role, enabling the conversion of multiple forms of energy such as temperature differentials, solar energy, mechanical force, and humidity into electricity. The development of these technologies lays the foundation for sustainable power solutions and promotes research progress in energy conversion. Given the complexity and rapid development of this field, this review provides a detailed overview of the progress of multifunctional integrated energy conversion and storage technologies based on thermoelectric conversion. The focus is on improving material performance, optimizing the design of integrated device structures, and achieving device flexibility to expand their application scenarios, particularly the integration and multi-functionalization of wearable energy conversion technologies. Additionally, we discuss the current development bottlenecks and future directions to facilitate the continuous advancement of this field.

Lignin containing cellulose nanofiber/Ag2Se nanocomposite films: a promising material for thermoelectric film generators

This work deals with the fabrication of lignin containing cellulose nanofiber (LCNF)/Ag2Se films for thermoelectric applications. Ag2Se nanoparticles were synthesized within the LCNF network through in situ methods, employing Na2SeO3 and AgNO3 along with microwave energy treatment. LCNF/Ag2Se films fabricated with two LCNF : Ag2Se weight percent ratios (i.e., 50 : 50 and 30 : 70) were used to construct a flexible thermoelectric module. The obtained Ag2Se nanoparticles displayed a uniform size distribution in the LCNF network with smaller dimensions from the microwave energy treated group. The microstructure of LCNF/Ag2Se films was improved by hot-pressing, leading to enhanced film density thermoelectric properties. At a differential temperature of 50 K, films with 50% and 70% of Ag2Se exhibited output voltages of 18 and 21 mV; and Seebeck coefficients of -60 and -70 μV K-1 at 350 K, respectively. When microwave energy was applied, the films at 50% and 70% Ag2Se showed highest output voltages of 19 and 33 mV, respectively, and Seebeck coefficients of -63.3 and -110 μV K-1 at 350 K. The low-cost fabrication process associated with this module opens a pathway for applications such as energy harvesting.

Ag2Se as a tougher alternative to n-type Bi2Te3 thermoelectrics

For half a century, only Bi2Te3-based thermoelectrics have been commercialized for near room temperature applications including both power generation and refrigeration. Because of the strong layered structure, Bi2Te3 in particular for n-type conduction has to be texturized to utilize its high in-plane thermoelectric performance, leaving a substantial challenge in toughness. This work presents the fabrication and performance evaluation of thermoelectric modules based on n-type Ag2Se paring with commercial p-Bi2Te3. Ag2Se mechanically allows an order of magnitude larger fracture strain and thermoelectrically secures the module efficiency quite competitive to that of commercial one for both refrigeration and power generation within ± 50 K of room temperature, enabling a demonstration of a significantly tougher alternative to n-type Bi2Te3 for practical applications.

Ductile P-Type AgCu(Se,S,Te) Thermoelectric Materials

Ductile inorganic thermoelectric (TE) materials open a new approach to develop high-performance flexible TE devices. N-type Ag2(S,Se,Te) and p-type AgCu(Se,S,Te) pseudoternary solid solutions are two typical categories of ductile inorganic TE materials reported so far. Comparing with the Ag2(S,Se,Te) pseudoternary solid solutions, the phase composition, crystal structure, and physical properties of AgCu(Se,S,Te) pseudoternary solid solutions are more complex, but their relationships are still ambiguous now. In this work, via systematically investigating the phase composition, crystal structure, mechanical, and TE properties of about 60 AgCu(Se,S,Te) pseudoternary solid solutions, the comprehensive composition-structure-property phase diagrams of the AgCuSe-AgCuS-AgCuTe pseudoternary system is constructed. By mapping the complex phases, the "ductile-brittle" and "n-p" transition boundaries are determined and the composition ranges with high TE performance and inherent ductility are illustrated. On this basis, high performance p-type ductile TE materials are obtained, with a maximum zT of 0.81 at 340 K. Finally, flexible in-plane TE devices are prepared by using the AgCu(Se,S,Te)-based ductile TE materials, showing high output performance that is superior to those of organic and inorganic-organic hybrid flexible devices.

A Strategy for Fabricating Ultra-Flexible Thermoelectric Films Using Ag2Se-Based Ink

Flexible thermoelectric materials have drawn significant attention from researchers due to their potential applications in wearable electronics and the Internet of Things. Despite many reports on these materials, it remains a significant challenge to develop cost-effective methods for large-scale, patterned fabrication of materials that exhibit both excellent thermoelectric performance and remarkable flexibility. In this study, we have developed an Ag2Se-based ink with excellent printability that can be used to fabricate flexible thermoelectric films by screen printing and low-temperature sintering. The printed films exhibit a Seebeck coefficient of -161 μV/K and a power factor of 3250.9 μW/m·K2 at 400 K. Moreover, the films demonstrate remarkable flexibility, showing minimal changes in resistance after being bent 5000 times at a radius of 5 mm. Overall, this research offers a new opportunity for the large-scale patterned production of flexible thermoelectric films.

High Power Factor Flexible Ag2Te Film on Nylon by a Wet Chemical Method for Power Generator

Herein, we develop a facile wet chemical method for the synthesis of Ag2Te powders at room temperature and flexible Ag2Te/nylon thermoelectric (TE) films are prepared by vacuum-assisted filtration of the synthesized Ag2Te powders and then hot pressing. Because of the good crystallinity of Ag2Te grains and continuous grain boundaries, an optimized film exhibits a power factor of 513 μW m-1 K-2 at 300 K, which stands among the highest values reported for Ag2Te-based films to date. In addition, the film also has good flexibility. A four-leg flexible TE device assembled with the film generates a power density of 5.46 W m-2 at a temperature gradient of 31.8 K. This work provides a facile and environmentally friendly method for preparing flexible Ag2Te films.

Screening Weldable Metal Electrodes for Ag2Se Thermoelectric Devices below 300 °C

Thermoelectricity has been considered as the most important solution of generating electricity, particularly from low-grade heat below 300 °C. Despite efforts in recent years on exploring alternative materials to only commercialized Bi2Te3, the practical implementation of these new materials has been hindered by inadequate investigation into device design. Given that the utilization of weldable electrodes offers advantages in technical compatibility for a large-scale assembly of thermoelectric elements into modules, a thorough investigation into the potential of weldable metal electrodes at T < 300 °C is imperative. In this work, the diffusion of 11 kinds of thermoelectric materials in common weldable metals (Ni, Fe, Cu, and Ag) was screened. Ag is sorted out as a promising weldable electrode that can directly bond to thermoelectric Ag2Se in this temperature range, leading to a minimization of an interfacial contact resistivity down to 11 μΩ cm2 in a design of the Ag/Ag2Se/Ag structure. The conversion efficiency of ∼3% at ΔT of 95 K with an excellent stability indicates Ag2Se as a top alternative to n-type Bi2Te3 for low-grade heat recovery.

Hidden structures: a driving factor to achieve low thermal conductivity and high thermoelectric performance

The long-range periodic atomic arrangement or the lack thereof in solids typically dictates the magnitude and temperature dependence of their lattice thermal conductivity (κlat). Compared to crystalline materials, glasses exhibit a much-suppressed κlat across all temperatures as the phonon mean free path reaches parity with the interatomic distances therein. While the occurrence of such glass-like thermal transport in crystalline solids captivates the scientific community with its fundamental inquiry, it also holds the potential for profoundly impacting the field of thermoelectric energy conversion. Therefore, efficient manipulation of thermal transport and comprehension of the microscopic mechanisms dictating phonon scattering in crystalline solids are paramount. As quantized lattice vibrations (i.e., phonons) drive κlat, atomistic insights into the chemical bonding characteristics are crucial to have informed knowledge about their origins. Recently, it has been observed that within the highly symmetric 'averaged' crystal structures, often there are hidden locally asymmetric atomic motifs (within a few Å), which exert far-reaching influence on phonon transport. Phenomena such as local atomic off-centering, atomic rattling or tunneling, liquid-like atomic motion, site splitting, local ordering, etc., which arise within a few Å scales, are generally found to drastically disrupt the passage of heat carrying phonons. Despite their profound implication(s) for phonon dynamics, they are often overlooked by traditional crystallographic techniques. In this review, we provide a brief overview of the fundamental aspects of heat transport and explore the status quo of innately low thermally conductive crystalline solids, wherein the phonon dynamics is majorly governed by local structural phenomena. We also discuss advanced techniques capable of characterizing the crystal structure at the sub-atomic level. Subsequently, we delve into the emergent new ideas with examples linked to local crystal structure and lattice dynamics. While discussing the implications of the local structure for thermal conductivity, we provide the state-of-the-art examples of high-performance thermoelectric materials. Finally, we offer our viewpoint on the experimental and theoretical challenges, potential new paths, and the integration of novel strategies with material synthesis to achieve low κlat and realize high thermoelectric performance in crystalline solids via local structure designing.

High performance magnesium-based plastic semiconductors for flexible thermoelectrics

Low-cost thermoelectric materials with simultaneous high performance and superior plasticity at room temperature are urgently demanded due to the lack of ever-lasting power supply for flexible electronics. However, the inherent brittleness in conventional thermoelectric semiconductors and the inferior thermoelectric performance in plastic organics/inorganics severely limit such applications. Here, we report low-cost inorganic polycrystalline Mg3Sb0.5Bi1.498Te0.002, which demonstrates a remarkable combination of large strain (~ 43%) and high figure of merit zT (~ 0.72) at room temperature, surpassing both brittle Bi2(Te,Se)3 (strain ≤ 5%) and plastic Ag2(Te,Se,S) and organics (zT ≤ 0.4). By revealing the inherent high plasticity in Mg3Sb2 and Mg3Bi2, capable of sustaining over 30% compressive strain in polycrystalline form, and the remarkable deformability of single-crystalline Mg3Bi2 under bending, cutting, and twisting, we optimize the Bi contents in Mg3Sb2-xBix (x = 0 to 1) to simultaneously boost its room-temperature thermoelectric performance and plasticity. The exceptional plasticity of Mg3Sb2-xBix is further revealed to be brought by the presence of a dense dislocation network and the persistent Mg-Sb/Bi bonds during slipping. Leveraging its high plasticity and strength, polycrystalline Mg3Sb2-xBix can be easily processed into micro-scale dimensions. As a result, we successfully fabricate both in-plane and out-of-plane flexible Mg3Sb2-xBix thermoelectric modules, demonstrating promising power density. The inherent remarkable plasticity and high thermoelectric performance of Mg3Sb2-xBix hold the potential for significant advancements in flexible electronics and also inspire further exploration of plastic inorganic semiconductors.

The Latest Advances in Ink-Based Nanogenerators: From Materials to Applications

Nanogenerators possess the capability to harvest faint energy from the environment. Among them, thermoelectric (TE), triboelectric, piezoelectric (PE), and moisture-enabled nanogenerators represent promising approaches to micro-nano energy collection. These nanogenerators have seen considerable progress in material optimization and structural design. Printing technology has facilitated the large-scale manufacturing of nanogenerators. Although inks can be compatible with most traditional functional materials, this inevitably leads to a decrease in the electrical performance of the materials, necessitating control over the rheological properties of the inks. Furthermore, printing technology offers increased structural design flexibility. This review provides a comprehensive framework for ink-based nanogenerators, encompassing ink material optimization and device structural design, including improvements in ink performance, control of rheological properties, and efficient energy harvesting structures. Additionally, it highlights ink-based nanogenerators that incorporate textile technology and hybrid energy technologies, reviewing their latest advancements in energy collection and self-powered sensing. The discussion also addresses the main challenges faced and future directions for development.

Lattice Plainification Leads to High Thermoelectric Performance of P-Type PbSe Crystals

Thermoelectrics has applications in power generation and refrigeration. Since only commercial Bi2Te3 has a low abundance Te, PbSe gets attention. This work enhances the near-room temperature performance of p-type PbSe through enhancing carrier mobility via lattice plainification. Composition controlled and Cu-doped p-type PbSe crystals are grown through physical vapor deposition. Results exhibit an enhanced carrier mobility ≈2578 cm2 V-1 s-1 for Pb0.996Cu0.0004Se. Microstructure characterization and density functional theory calculations verify the introduced Cu atoms filled Pb vacancies, realizing lattice plainification and enhancing the carrier mobility. The Pb0.996Cu0.0004Se sample achieves a power factor ≈42 µW cm-1 K-2 and a ZT ≈ 0.7 at 300 K. The average ZT of it reaches ≈0.9 (300-573 K), resulting in a single-leg power generation efficiency of 7.1% at temperature difference of 270 K, comparable to that of p-type commercial Bi2Te3. A 7-pairs device paired the p-type Pb0.996Cu0.0004Se with the n-type commercial Bi2Te3 shows a maximum cooling temperature difference ≈42 K with the hot side at 300 K, ≈65% of that of the commercial Bi2Te3 device. This work highlights the potential of p-type PbSe for power generation and refrigeration near room temperature and hope to inspire researchers on replacing commercial Bi2Te3.

Unraveling electronic origins for boosting thermoelectric performance of p-type (Bi,Sb)2Te3

P-type Bi2-xSbxTe3 compounds are crucial for thermoelectric applications at room temperature, with Bi0.5Sb1.5Te3 demonstrating superior performance, attributed to its maximum density-of-states effective mass (m*). However, the underlying electronic origin remains obscure, impeding further performance optimization. Herein, we synthesized high-quality Bi2-xSbxTe3 (00 l) films and performed comprehensive angle-resolved photoemission spectroscopy (ARPES) measurements and band structure calculations to shed light on the electronic structures. ARPES results directly evidenced that the band convergence along the [Formula: see text]-[Formula: see text] direction contributes to the maximum m* of Bi0.5Sb1.5Te3. Moreover, strategic manipulation of intrinsic defects optimized the hole density of Bi0.5Sb1.5Te3, allowing the extra valence band along [Formula: see text]-[Formula: see text] to contribute to the electrical transport. The synergy of the above two aspects documented the electronic origins of the Bi0.5Sb1.5Te3's superior performance that resulted in an extraordinary power factor of ~5.5 milliwatts per meter per square kelvin. The study offers valuable guidance for further performance optimization of p-type Bi2-xSbxTe3.

Low-Temperature ALD of SbOx /Sb2 Te3 Multilayers with Boosted Thermoelectric Performance

Nanoscale superlattice (SL) structures have proven to be effective in enhancing the thermoelectric (TE) properties of thin films. Herein, the main phase of antimony telluride (Sb2 Te3 ) thin film with sub-nanometer layers of antimony oxide (SbOx ) is synthesized via atomic layer deposition (ALD) at a low temperature of 80 °C. The SL structure is tailored by varying the cycle numbers of Sb2 Te3 and SbOx . A remarkable power factor of 520.8 µW m-1 K-2 is attained at room temperature when the cycle ratio of SbOx and Sb2 Te3 is set at 1:1000 (i.e., SO:ST = 1:1000), corresponding to the highest electrical conductivity of 339.8 S cm-1 . The results indicate that at the largest thickness, corresponding to ten ALD cycles, the SbOx layers act as a potential barrier that filters out the low-energy charge carriers from contributing to the overall electrical conductivity. In addition to enhancing the scattering of the mid-to-long-wavelength at the SbOx /Sb2 Te3 interface, the presence of the SbOx sub-layer induces the confinement effect and strain forces in the Sb2 Te3 thin film, thereby effectively enhancing the Seebeck coefficient and reducing the thermal conductivity. These findings provide a new perspective on the design of SL-structured TE materials and devices.

Synergistic Interactions in Sequential Process Doping of Polymer/Single-Walled Carbon Nanotube Nanocomposites for Enhanced n-Type Thermoelectric Performance

This study focuses on the fabrication of nanocomposite thermoelectric devices by blending either a naphthalene-diimide (NDI)-based conjugated polymer (NDI-T1 or NDI-T2), or an isoindigo (IID)-based conjugated polymer (IID-T2), with single-walled carbon nanotubes (SWCNTs). This is followed by sequential process doping method with the small molecule 4-(2,3-dihydro-1,3-dimethyl-1H-benzimidazol-2-yl)-N,N-dimethylbenzenamine (N-DMBI) to provide the nanocomposite with n-type thermoelectric properties. Experiments in which the concentrations of the N-DMBI dopant are varied demonstrate the successful conversion of all three polymer/SWCNT nanocomposites from p-type to n-type behavior. Comprehensive spectroscopic, microstructural, and morphological analyses of the pristine polymers and the various N-DMBI-doped polymer/SWCNT nanocomposites are performed in order to gain insights into the effects of various interactions between the polymers and SWCNTs on the doping outcomes. Among the obtained nanocomposites, the NDI-T1/SWCNT exhibits the highest n-type Seebeck coefficient and power factor of -57.7 µV K-1 and 240.6 µW m-1 K-2 , respectively. However, because the undoped NDI-T2/SWCNT exhibits a slightly higher p-type performance, an integral p-n thermoelectric generator is fabricated using the doped and undoped NDI-T2/SWCNT nanocomposite. This device is shown to provide an output power of 27.2 nW at a temperature difference of 20 K.

Flexible Ag2Se Thermoelectric Films Enable the Multifunctional Thermal Perception in Electronic Skins

Skin is critical for shaping our interactions with the environment. The electronic skin (E-skin) has emerged as a promising interface for medical devices to replicate the functions of damaged skin. However, exploration of thermal perception, which is crucial for physiological sensing, has been limited. In this work, a multifunctional E-skin based on flexible thermoelectric Ag2Se films is proposed, which utilizes the Seebeck effect to replicate the sensory functions of natural skin. The E-skin can enable capabilities including temperature perception, tactile perception, contactless perception, and material recognition by analyzing the thermal conduction behaviors of various materials. To further validate the capabilities of constructed E-skins, a wearable device with multiple sensory channels was fabricated and tested for gesture recognition. This work highlights the potential for using flexible thermoelectric materials in advanced biomedical applications including health monitoring and smart prosthetics.

Observation of giant room-temperature anisotropic magnetoresistance in the topological insulator β-Ag2Te

Achieving room-temperature high anisotropic magnetoresistance ratios is highly desirable for magnetic sensors with scaled supply voltages and high sensitivities. However, the ratios in heterojunction-free thin films are currently limited to only a few percent at room temperature. Here, we observe a high anisotropic magnetoresistance ratio of -39% and a giant planar Hall effect (520 μΩ⋅cm) at room temperature under 9 T in β-Ag2Te crystals grown by chemical vapor deposition. We propose a theoretical model of anisotropic scattering - induced by a Dirac cone tilt and modulated by intrinsic properties of effective mass and sound velocity - as a possible origin. Moreover, small-size angle sensors with a Wheatstone bridge configuration were fabricated using the synthesized β-Ag2Te crystals. The sensors exhibited high output response (240 mV/V), high angle sensitivity (4.2 mV/V/°) and small angle error (<1°). Our work translates the developments in topological insulators to a broader impact on practical applications such as high-field magnetic and angle sensors.

Flexible power generators by Ag2Se thin films with record-high thermoelectric performance

Exploring new near-room-temperature thermoelectric materials is significant for replacing current high-cost Bi2Te3. This study highlights the potential of Ag2Se for wearable thermoelectric electronics, addressing the trade-off between performance and flexibility. A record-high ZT of 1.27 at 363 K is achieved in Ag2Se-based thin films with 3.2 at.% Te doping on Se sites, realized by a new concept of doping-induced orientation engineering. We reveal that Te-doping enhances film uniformity and (00l)-orientation and in turn carrier mobility by reducing the (00l) formation energy, confirmed by solid computational and experimental evidence. The doping simultaneously widens the bandgap, resulting in improved Seebeck coefficients and high power factors, and introduces TeSe point defects to effectively reduce the lattice thermal conductivity. A protective organic-polymer-based composite layer enhances film flexibility, and a rationally designed flexible thermoelectric device achieves an output power density of 1.5 mW cm-2 for wearable power generation under a 20 K temperature difference.

N-Type Thermoelectric AgBiPbS3 with Nanoprecipitates and Low Thermal Conductivity

Thermoelectric sulfide materials are of particular interest due to the earth-abundant and cost-effective nature of sulfur. Here, we report a new n-type degenerate semiconductor sulfide, AgBiPbS3, which adopts a Fm3̅m structure with a narrow band gap of ∼0.32 eV. Despite the homogeneous distribution of elements at the scale of micrometer, Ag2S nanoprecipitates with dimensions of several nanometers were detected throughout the matrix. AgBiPbS3 exhibits a low room-temperature lattice thermal conductivity of 0.88 W m-1 K-1, owing to the intrinsic low lattice thermal conductivity of Ag2S and the effective scattering of phonons at nanoprecipitate boundaries. Moreover, compared to AgBiS2, AgBiPbS3 demonstrates a significantly improved weighted mobility of >16 cm2 V-1 s-1 at 300 K, leading to an enhanced PF of 1.6 μW cm-1 K-2 at 300 K. The superior electrical transport in AgBiPbS3 can be attributed to the high valley degeneracy of the L point (the conduction band minimum), which is contributed by the Pb s and Pb p orbitals. Further, Ga doping is found to be effective in modulating the Fermi levels of AgBiPbS3, leading to further enhancement of PF with a PFave of 2.7 μW cm-1 K-2 in the temperature range of 300-823 K. Consequently, a relatively high ZTave of 0.22 and a peak ZT of ∼0.4 at 823 K have been achieved in 3% Ga-doped AgBiPbS3, highlighting the potential of AgBiPbS3 as an n-type thermoelectric sulfide.

Development of Cu2Se/Ag2(S,Se)-Based Monolithic Thermoelectric Generators for Low-Grade Waste Heat Energy Harvesting

With the ongoing climate and energy crises, thermoelectric conversion has slowly emerged as a clean and reliable alternative energy source for small Internet of Things (IoT) devices. Commercially available thermoelectric generators (TEGs) are typically composed of expensive and toxic Bi2Te3-based thermoelectric materials and require complicated and energy-intensive device assembly processes. As an alternative solution, we have developed a Ag- and Cu-chalcogenide-based monolithic TEG using simple, quick, and low-energy-cost device fabrication processes for low-grade waste heat recovery for energy harvesting. We used ductile Ag2S0.55Se0.45 and overstoichiometric Cu2.075Se, both possessing excellent transport properties around room temperature, with a zT value of ∼0.5 at 300 K. By optimizing the device fabrication process, we were successfully able to assemble the monolithic TEGs without any significant Ag- or Cu-ion migration and obtained a dense and robust device. Strategic optimization of the device structure was able to reduce the electrical contact resistance of the device, which resulted in increased power output. A maximum power density of 0.68 mW/cm2 at a ΔT = 30 K was obtained, which is comparable to a similar Bi2Te3-based monolithic TEG. These results show the potential of chalcogenide-based monolithic TEG as a simple and low-cost alternative to Bi2Te3-based TEGs for energy harvesting applications.

Thermal properties of cubic NaSbS2: diffusion dominant thermal transport above the Debye temperature

We elucidate the thermal properties of superionic conductors, which are of intense current interest for solid-state battery applications. The temperature-dependent thermal properties of superionic NaSbS2 were investigated by analyses of appropriate models revealing that a predominant contribution to thermal transport above the Debye temperature is from thermal diffusion.

Synergetic Enhancement of Strength-Ductility and Thermoelectric Properties of Ag2 Te by Domain Boundaries

Simultaneously improving the mechanical and thermoelectric (TE) properties is significant for the engineering applications of inorganic TE materials. In this work, a novel nanodomain strategy is developed for Ag2 Te compounds to yield 40% and 200% improved compressive strength (160 MPa) and fracture strain (16%) when compared to domain-free samples (115 MPa and 5.5%, respectively). The domained samples also achieve a 45% improvement in average ZT value. The domain boundaries (DBs) provide extra sites for dislocation nucleation while pinning the dislocation movement, resulting in superior strength and ductility. In addition, phonon scattering induced by DBs suppresses the lattice thermal conductivity of Ag2 Te and also reduces the weighted mobility. These findings provide new insights into grain and DB engineering for high-performance inorganic semiconductors with robust mechanical properties.

Biosynthesis, Spectrophotometric Follow-Up, Characterization, and Variable Antimicrobial Activities of Ag Nanoparticles Prepared by Edible Macrofungi

The biosynthesis of silver nanoparticles (Ag NPs) could play a significant role in the development of commercial antimicrobials. Herein, the biosynthesis of Ag NPs was studied using the edible mushroom Pleurotus floridanus, and following its formation, spectrophotometry was used to detect the best mushroom content, pH, temperature, and silver concentration. After that, the morphology was described via transmission electron microscopy (TEM), and nanoscale-size particles were found ranging from 11 to 13 nm. The best conditions of Ag content and pH were found at 1.0 mM and 11.0, respectively. In addition, the best mushroom extract concentration was found at 30 g/L. According to XRD analysis, the crystal structure of the formed amorphous Ag NPs is cubic with a space group of fm-3m and a space group number of 225. After that, the function groups at the surface of the prepared Ag NPs were studied via FTIR analysis, which indicated the presence of C=O, C-H, and O-H groups. These groups could indicate the presence of mushroom traces in the Ag NPs, which was confirmed via the amorphous characteristics of Ag NPs from the XRD analysis. The prepared Ag NPs have a high impact against different microorganisms, which could be attributed to the ability of Ag NPs to penetrate the cell bacterial wall.

Flexible Ag-S-Te System with Promising Room-Temperature Thermoelectric Performance

Silver chalcogenides demonstrate great potential as flexible thermoelectric materials due to their excellent ductility and tunable electrical and thermal transport properties. In this work, we report that the amorphous/crystalline phase ratio and thermoelectric properties of the Ag₂S_xTe_1-x (x = 0.55-0.75) samples can be modified by altering the S content. The room-temperature power factor of the Ag₂S_0.55Te_0.45 sample is 4.9 μW cm^-1 K^-2, and a higher power factor can be achieved by decreasing the carrier concentration as predicted by the single parabolic band model. The addition of a small amount of excessive Te into Ag₂S_0.55Te_0.45 (Ag₂S_0.55Te_0.45+y) not only enhances the power factor by decreasing the carrier concentration but also reduces the total thermal conductivity due to decreased electronic thermal conductivity. Owing to the effectively optimized carrier concentration, the thermoelectric power factor and dimensionless figure of merit zT of the sample with y = 0.007 reaches, respectively, 6.2 μW cm^-1 K^-2 and 0.39, while the excellent plastic deformability is well maintained, demonstrating its promising potential as a flexible thermoelectric material at room temperature.

From Brittle to Ductile: A Scalable and Tailorable All-Inorganic Semiconductor Foil through a Rolling Process toward Flexible Thermoelectric Modules

Inorganic thermoelectric (TE) materials with outstanding capacity for energy conversion are expected to be promising eco-friendly and renewable power sources, but they are always intrinsically brittle, restricting their development in flexible TE electronics. Therefore, we have developed a facile manufacturing method of large-scale all-inorganic silver chalcogenide foils and flexible TE generators in this work. A rolling process, as an effective and facile molding technique, is applied in ductile TE materials. The figure-of-merit for flexibility of this free-standing foil is in the range of 0.02-0.13, suggesting the superior flexibility of the all-inorganic TE foils. A high TE figure-of-merit ZT of 0.47 at room temperature is reached for Ag₂S_0.45Se_0.45Te_0.1, which is one of the most promising room-temperature ZTs among flexible TE materials. A proof-of-concept flexible TE generator based on silver chalcogenide foils achieves an open-circuit voltage of 1.19 mV and an output power density of 1.8 mW/m² with a temperature difference of 2.7 °C across the TE leg, showing great potential in heat-to-electricity conversion.