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Huang X, Jia L, Song X, Chen Y, Song Y, Yang K, Guo JG, Huang Y, Liu L, Wang Y. Observation of Two-Dimensional Type-II Superconductivity in Bulk 3R-TaSe 2 by Scanning Tunneling Spectroscopy. J Phys Chem Lett 2023; 14:7235-7240. [PMID: 37552580 DOI: 10.1021/acs.jpclett.3c01730] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/10/2023]
Abstract
Here we report a low-temperature and vector-magnetic-field scanning tunneling microscopy/spectroscopy (STM/S) study on 3R-TaSe2. The sample surface was obtained by exfoliating a bulk 3R-TaSe2 single crystal in an ultrahigh-vacuum (UHV) chamber and then transferred in situ to STM. It was observed that the topmost layer shows a 3 × 3 charge density wave pattern at T = 4.2 K with metallic character in STS. The electronic characterization study by variable-temperature and magnetic field STS revealed that 3R-TaSe2 behaves as a type-II superconductor. More intriguingly, such superconductivity (SC) can survive under strong in-plane magnetic fields even up to 2.5 T and out-of-plane magnetic fields up to 0.7 T, exhibiting an anisotropic superconducting property. Temperature-dependent STS showed that 3R-TaSe2 undergoes a transition above 0.58 K. Our results may be important for understanding the intriguing SC properties of the 3R-phase van der Waals materials.
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Affiliation(s)
- Xinyu Huang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Liangguang Jia
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Xuan Song
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Yaoyao Chen
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Yanpeng Song
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Kai Yang
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Jian-Gang Guo
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Yuan Huang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Liwei Liu
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Yeliang Wang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
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Ma L, Wang X, Wang H, Wang X, Zou G, Guan Y, Guo S, Li H, Chen Q, Kang L, Zhang L, Wu P. van der Waals Self-Epitaxial Growth of Inch-Sized Superconducting Niobium Diselenide Films. NANO LETTERS 2023; 23:6892-6899. [PMID: 37470724 DOI: 10.1021/acs.nanolett.3c01283] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/21/2023]
Abstract
Ultrathin superconducting films are the basis of superconductor devices. van der Waals (vdW) NbSe2 with noncentrosymmetry exhibits exotic superconductivity and shows promise in superconductor electronic devices. However, the growth of inch-scale NbSe2 films with layer regulation remains a challenge because vdW structural material growth is strongly dependent on the epitaxial guidance of the substrate. Herein, a vdW self-epitaxy strategy is developed to eliminate the substrate driving force in film growth and realize inch-sized NbSe2 film growth with thicknesses from 2.1 to 12.1 nm on arbitrary substrates. The superconducting transition temperature of 5.1 K and superconducting transition width of 0.30 K prove the top homogeneity and quality of superconductivity among all of the synthetic NbSe2 films. Coupled with a large area and substrate compatibility, this work paves the way for developing NbSe2 superconductor electronics.
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Affiliation(s)
- Liang Ma
- Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210023, China
| | - Xiaohan Wang
- Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210023, China
| | - Hao Wang
- Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210023, China
- Hefei National Laboratory, Hefei 230088, China
| | - Xiangyi Wang
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215123, China
| | - Guifu Zou
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215123, China
| | - Yanqiu Guan
- Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210023, China
| | - Shuya Guo
- Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210023, China
| | - Haochen Li
- Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210023, China
| | - Qi Chen
- Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210023, China
| | - Lin Kang
- Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210023, China
- Hefei National Laboratory, Hefei 230088, China
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Labao Zhang
- Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210023, China
- Hefei National Laboratory, Hefei 230088, China
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Peiheng Wu
- Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210023, China
- Hefei National Laboratory, Hefei 230088, China
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Geng T, Wang J, Meng W, Zhang J, Feng Q, Hou Y, Lu Q. A Novel Atomically Resolved Scanning Tunneling Microscope Capable of Working in Cryogen-Free Superconducting Magnet. MICROMACHINES 2023; 14:637. [PMID: 36985044 PMCID: PMC10059664 DOI: 10.3390/mi14030637] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/14/2023] [Revised: 03/04/2023] [Accepted: 03/09/2023] [Indexed: 06/18/2023]
Abstract
We present a novel homebuilt scanning tunneling microscope (STM) with atomic resolution integrated into a cryogen-free superconducting magnet system with a variable temperature insert. The STM head is designed as a nested structure of double piezoelectric tubes (PTs), which are connected coaxially through a sapphire frame whose top has a sample stage. A single shaft made of tantalum, with the STM tip on top, is held firmly by a spring strip inside the internal PT. The external PT drives the shaft to the tip-sample junction based on the SpiderDrive principle, and the internal PT completes the subsequent scanning and imaging work. The STM head is simple, compact, and easy to assemble. The excellent performance of the device was demonstrated by obtaining atomic-resolution images of graphite and low drift rates of 30.2 pm/min and 41.4 pm/min in the X-Y plane and Z direction, respectively, at 300K. In addition, we cooled the sample to 1.6 K and took atomic-resolution images of graphite and NbSe2. Finally, we performed a magnetic field sweep test from 0 T to 9 T at 70 K, obtaining distinct graphite images with atomic resolution under varying magnetic fields. These experiments show our newly developed STM's high stability, vibration resistance, and immunity to high magnetic fields.
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Affiliation(s)
- Tao Geng
- High Magnetic Field Laboratory, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China
- University of Science and Technology of China, Hefei 230026, China
| | - Jihao Wang
- High Magnetic Field Laboratory, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, China
- High Magnetic Field Laboratory of Anhui Province, Hefei 230031, China
| | - Wenjie Meng
- High Magnetic Field Laboratory, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, China
- High Magnetic Field Laboratory of Anhui Province, Hefei 230031, China
| | - Jing Zhang
- High Magnetic Field Laboratory, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, China
- High Magnetic Field Laboratory of Anhui Province, Hefei 230031, China
| | - Qiyuan Feng
- High Magnetic Field Laboratory, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, China
- High Magnetic Field Laboratory of Anhui Province, Hefei 230031, China
| | - Yubin Hou
- High Magnetic Field Laboratory, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, China
- High Magnetic Field Laboratory of Anhui Province, Hefei 230031, China
| | - Qingyou Lu
- High Magnetic Field Laboratory, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China
- University of Science and Technology of China, Hefei 230026, China
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, China
- High Magnetic Field Laboratory of Anhui Province, Hefei 230031, China
- Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei 230026, China
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
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Effect of alloying in monolayer niobium dichalcogenide superconductors. Nat Commun 2022; 13:2376. [PMID: 35501318 PMCID: PMC9061790 DOI: 10.1038/s41467-022-29213-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/20/2021] [Accepted: 03/04/2022] [Indexed: 11/13/2022] Open
Abstract
When sulfur and silicon are incorporated in monolayer 2H-NbSe2 the superconducting transition temperature, Tc, has been found to vary non-monotonically. This was assumed to be a manifestation of fractal superconductivity. Using first-principles calculations, we show that the nonmonotonic dependence of Tc is insufficient evidence for multifractality. A unifying aspect in our study are selenium vacancies in NbSe2, which are magnetic pair-breaking defects that we propose can be present in considerable concentrations in as-grown NbSe2. We show that sulfur and silicon can occupy the selenium sites and reduce the pair-breaking effect. Furthermore, when sulfur is incorporated in NbSe2, the density of states at the Fermi level and the proximity to magnetism in the alloy are both reduced compared to the parent compound. Based on our results, we propose an alternative explanation of the non-monotonic change in Tc which does not require the conjecture of multifractality. The non-monotonic behaviour of the superconducting transition temperature in NbSe2-xSx monolayer alloys has been linked to fractal superconductivity. Here, using first-principles calculations, the authors provide an alternative explanation for this behavior based on the effects of alloying and defects on the electronic structure and magnetism.
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