Compact Modeling Technology for the Simulation of Integrated Circuits Based on Graphene Field-Effect Transistors

Laser-Guided, Self-Confined Graphitization for High-Conductivity Embedded Electronics

Facile fabrication of highly conductive and self-encapsulated graphene electronics is in urgent demand for carbon-based integrated circuits, field effect transistors, optoelectronic devices, and flexible sensors. The current fabrication of these electronic devices is mainly based on layer-by-layer techniques (separate circuit preparation and encapsulation procedures), which show multistep fabrication procedures, complicated renovation/repair procedures, and poor electrical property due to graphene oxidation and exfoliation. Here, we propose a laser-guided interfacial writing (LaserIW) technique based on self-confined, nickel-catalyzed graphitization to directly fabricate highly conductive, embedded graphene electronics inside multilayer structures. The doped nickel is used to induce chain carbonization, which firstly enhances the photothermal effect to increase the confined temperature for initial carbonization, and the generated carbon further increases the light-absorption capacity to fabricate high-quality graphene. Meanwhile, the nickel atoms contribute to the accelerated connection of carbon atoms. This interfacial carbonization inherently avoids the exfoliation and oxidation of the as-formed graphene, resulting in an 8-fold improvement in electrical conductivity (~20,000 S/m at 7,958 W/cm2 and 2 mm/s for 20% nickel content). The LaserIW technique shows excellent stability and reproducibility, with ±2.5% variations in the same batch and ±2% variations in different batches. Component-level wireless light sensors and flexible strain sensors exhibit excellent sensitivity (665 kHz/(W/cm2) for passive wireless light sensors) and self-encapsulation (<1% variations in terms of waterproof, antifriction, and antithermal shock). Additionally, the LaserIW technique allows for one-step renovation of in-service electronics and nondestructive repair of damaged circuits without the need to disassemble encapsulation layers. This technique reverses the layer-by-layer processing mode and provides a powerful manufacturing tool for the fabrication, modification, and repair of multilayer, multifunctional embedded electronics, especially demonstrating the immense potential for in-space manufacturing.

Physics-based bias-dependent compact modeling of 1/f noise in single- to few-layer 2D-FETs

1/f noise is a critical figure of merit for the performance of transistors and circuits. For two-dimensional devices (2D-FETs), and especially for applications in the GHz range where short-channel FETs are required, the velocity saturation (VS) effect can result in the reduction of 1/f noise at high longitudinal electric fields. A new physics-based compact model has been for the first time introduced for single- to few-layer 2D-FETs in this study, precisely validating 1/f noise experiments for various types of devices. The proposed model mainly accounts for the measured 1/f noise bias dependence as the latter is defined by different physical mechanisms. Thus, analytical expressions are derived, valid in all regions of operation in contrast to conventional approaches available in the literature so far, accounting for carrier number fluctuation (ΔN), mobility fluctuation (Δμ) and contact resistance (ΔR) effects based on the underlying physics that rules these devices. The ΔN mechanism due to trapping/detrapping together with an intense Coulomb scattering effect dominates the 1/f noise from the medium to the strong accumulation region while Δμ has also been demonstrated to modestly contribute in the subthreshold region. ΔR can also be significant in a very high carrier density. The VS induced reduction of 1/f noise measurements at high electric fields was also remarkably captured by the model. The physical validity of the model can also assist in extracting credible conclusions when conducting comparisons between experimental data from devices with different materials or dielectrics.

Marin E, Medina-Rull A, Toral-Lopez A, Cuesta-Lopez J, G. Ruiz F, El Mir L, Godoy A. Compact Modeling of Two-Dimensional Field-Effect Biosensors

A compact model able to predict the electrical read-out of field-effect biosensors based on two-dimensional (2D) semiconductors is introduced. It comprises the analytical description of the electrostatics including the charge density in the 2D semiconductor, the site-binding modeling of the barrier oxide surface charge, and the Stern layer plus an ion-permeable membrane, all coupled with the carrier transport inside the biosensor and solved by making use of the Donnan potential inside the ion-permeable membrane formed by charged macromolecules. This electrostatics and transport description account for the main surface-related physical and chemical processes that impact the biosensor electrical performance, including the transport along the low-dimensional channel in the diffusive regime, electrolyte screening, and the impact of biological charges. The model is implemented in Verilog-A and can be employed on standard circuit design tools. The theoretical predictions obtained with the model are validated against measurements of a MoS₂ field-effect biosensor for streptavidin detection showing excellent agreement in all operation regimes and leading the way for the circuit-level simulation of biosensors based on 2D semiconductors.

Potential Biomedical Limitations of Graphene Nanomaterials

Graphene-family nanomaterials (GFNs) possess mechanical stiffness, optical properties, and biocompatibility making them promising materials for biomedical applications. However, to realize the potential of graphene in biomedicine, it must overcome several challenges that arise when it enters the body's circulatory system. Current research focuses on the development of tumor-targeting devices using graphene, but GFNs accumulated in different tissues and cells through different pathways, which can cause toxic reactions leading to cell apoptosis and body dysfunction when the accumulated amount exceeds a certain limit. In addition, as a foreign substance, graphene can induce complex inflammatory reactions with immune cells and inflammatory factors, potentially enhancing or impairing the body's immune function. This review discusses the biomedical applications of graphene, the effects of graphene materials on human immune function, and the biotoxicity of graphene materials.