1
|
Liu T, Wang J, Liu Y, Min L, Wang L, Yuan Z, Sun H, Huang L, Li L, Meng X. Cyano-Coordinated Tin Halide Perovskites for Wearable Health Monitoring and Weak Light Imaging. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2400090. [PMID: 38433566 DOI: 10.1002/adma.202400090] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/02/2024] [Revised: 02/24/2024] [Indexed: 03/05/2024]
Abstract
Low-toxicity tin halide perovskites with excellent optoelectronic properties are promising candidates for photodetection. However, tin halide perovskite photodetectors have suffered from high dark current owing to uncontrollable Sn2+ oxidation. Here, 2-cyanoethan-1-aminium iodide (CNI) is introduced in CH(NH2)2SnI3 (FASnI3) perovskite films to inhibit Sn2+ oxidation by the strong coordination interaction between the cyano group (C≡N) and Sn2+. Consequently, FASnI3-CNI films exhibit reduced nonradiative recombination and lower trap density. The self-powered photodetector based on FASnI3-CNI exhibits low dark current (1.04 × 10-9 A cm-2), high detectivity (2.2 × 1013 Jones at 785 nm), fast response speed (2.62 µs), and good stability. Mechanism studies show the increase in the activation energy required for thermal emission and generated carriers, leading to a lower dark current in the FASnI3-CNI photodetector. In addition, flexible photodetectors based on FASnI3-CNI, exhibiting high detectivity and fast response speed, are employed in wearable electronics to monitor the human heart rate under weak light and zero bias conditions. Finally, the FASnI3-CNI perovskite photodetectors are integrated with a 32 × 32 thin-film transistor backplane, capable of ultraweak light (170 nW cm-2) real-time imaging with high contrast, and zero power consumption, demonstrating the great potential for image sensor applications.
Collapse
Affiliation(s)
- Tianhua Liu
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Junfang Wang
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yongsi Liu
- School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, China
| | - Liangliang Min
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, China
| | - Lixia Wang
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Ziquan Yuan
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Haoxuan Sun
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, China
| | - Le Huang
- School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, China
| | - Liang Li
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, China
| | - Xiangyue Meng
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| |
Collapse
|
2
|
Chan PF, Qin M, Su C, Ye L, Wang X, Wang Y, Guan X, Lu Z, Li G, Ngai T, Tsang SW, Zhao N, Lu X. iso-BAI Guided Surface Recrystallization for Over 14% Tin Halide Perovskite Solar Cells. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2309668. [PMID: 38537163 PMCID: PMC11165555 DOI: 10.1002/advs.202309668] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/13/2023] [Indexed: 06/12/2024]
Abstract
Tin-based perovskite solar cells (PSCs) are promising environmentally friendly alternatives to their lead-based counterparts, yet they currently suffer from much lower device performance. Due to variations in the chemical properties of lead (II) and tin (II) ions, similar treatments may yield distinct effects resulting from differences in underlying mechanisms. In this work, a surface treatment on tin-based perovskite is conducted with a commonly employed ligand, iso-butylammonium iodide (iso-BAI). Unlike the passivation effects previously observed in lead-based perovskites, such treatment leads to the recrystallization of the surface, driven by the higher solubility of tin-based perovskite in common solvents. By carefully designing the solvent composition, the perovskite surface is effectively modified while preserving the integrity of the bulk. The treatment led to enhanced surface crystallinity, reduced surface strain and defects, and improved charge transport. Consequently, the best-performing power conversion efficiency of FASnI3 PSCs increases from 11.8% to 14.2%. This work not only distinguishes the mechanism of surface treatments in tin-based perovskites from that of lead-based counterparts, but also underscores the critical role in designing tailor-made strategies for fabricating efficient tin-based PSCs.
Collapse
Affiliation(s)
- Pok Fung Chan
- Department of PhysicsThe Chinese University of Hong KongNew TerritoriesHong Kong SAR999077China
| | - Minchao Qin
- Department of PhysicsThe Chinese University of Hong KongNew TerritoriesHong Kong SAR999077China
| | - Chun‐Jen Su
- National Synchrotron Radiation Research CenterHsinchu Science ParkHsinchu30076Taiwan
| | - Liping Ye
- Department of ChemistryThe Chinese University of Hong KongNew TerritoriesHong Kong SAR999077China
| | - Xuezhou Wang
- Department of Electronic EngineeringThe Chinese University of Hong KongNew TerritoriesHong Kong SAR999077China
| | - Yunfan Wang
- Department of Materials Science and EngineeringCity University of Hong KongKowloon TongHong Kong SAR999077China
| | - Xin Guan
- Department of ChemistryThe Chinese University of Hong KongNew TerritoriesHong Kong SAR999077China
| | - Zhen Lu
- Department of Electrical and Electronic EngineeringThe Hong Kong Polytechnic UniversityHung HomHong Kong SAR999077China
| | - Gang Li
- Department of Electrical and Electronic EngineeringThe Hong Kong Polytechnic UniversityHung HomHong Kong SAR999077China
| | - To Ngai
- Department of ChemistryThe Chinese University of Hong KongNew TerritoriesHong Kong SAR999077China
| | - Sai Wing Tsang
- Department of Materials Science and EngineeringCity University of Hong KongKowloon TongHong Kong SAR999077China
| | - Ni Zhao
- Department of Electronic EngineeringThe Chinese University of Hong KongNew TerritoriesHong Kong SAR999077China
| | - Xinhui Lu
- Department of PhysicsThe Chinese University of Hong KongNew TerritoriesHong Kong SAR999077China
| |
Collapse
|
3
|
Wang T, Loi HL, Cao Q, Feng G, Guan Z, Wei Q, Chen C, Li M, Zhu Y, Lee CS, Yan F. Counter-Doping Effect by Trivalent Cations in Tin-Based Perovskite Solar Cells. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2402947. [PMID: 38743762 DOI: 10.1002/adma.202402947] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/27/2024] [Revised: 05/13/2024] [Indexed: 05/16/2024]
Abstract
Tin (Sn) -based perovskite solar cells (PSCs) normally show low open circuit voltage due to serious carrier recombination in the devices, which can be attributed to the oxidation and the resultant high p-type doping of the perovskite active layers. Considering the grand challenge to completely prohibit the oxidation of Sn-based perovskites, a feasible way to improve the device performance is to counter-dope the oxidized Sn-based perovskites by replacing Sn2+ with trivalent cations in the crystal lattice, which however is rarely reported. Here, the introduction of Sb3+, which can effectively counter-dope the oxidized perovskite layer and improve the carrier lifetime, is presented. Meanwhile, Sb3+ can passivate deep-level defects and improve carrier mobility of the perovskite layer, which are all favorable for the photovoltaic performance of the devices. Consequently, the target devices yield a relative enhancement of the power conversion efficiency (PCE) of 31.4% as well as excellent shelf-storage stability. This work provides a novel strategy to improve the performance of Sn-based PSCs, which can be developed as a universal way to compensate for the oxidation of Sn-based perovskites in optoelectronic devices.
Collapse
Affiliation(s)
- Tianyue Wang
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, 999077, P. R. China
| | - Hok-Leung Loi
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, 999077, P. R. China
| | - Qi Cao
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, 999077, P. R. China
| | - Guitao Feng
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, 999077, P. R. China
| | - Zhiqiang Guan
- Center of Super-Diamond and Advanced Films (COSDAF), Department of Chemistry, City University of Hong Kong, Kowloon Tong, Hong Kong SAR, 999077, P. R. China
| | - Qi Wei
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, 999077, P. R. China
| | - Changsheng Chen
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, 999077, P. R. China
| | - Mingjie Li
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, 999077, P. R. China
| | - Ye Zhu
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, 999077, P. R. China
| | - Chun-Sing Lee
- Center of Super-Diamond and Advanced Films (COSDAF), Department of Chemistry, City University of Hong Kong, Kowloon Tong, Hong Kong SAR, 999077, P. R. China
| | - Feng Yan
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, 999077, P. R. China
- Research Institute of Intelligent Wearable Systems, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, 999077, P. R. China
| |
Collapse
|
4
|
Hou E, Chen J, Luo J, Fan Y, Sun C, Ding Y, Xu P, Zhang H, Cheng S, Zhao X, Xie L, Yan J, Tian C, Wei Z. Cross-Linkable Fullerene Enables Elastic and Conductive Grain Boundaries for Efficient and Wearable Tin-Based Perovskite Solar Cells. Angew Chem Int Ed Engl 2024; 63:e202402775. [PMID: 38468414 DOI: 10.1002/anie.202402775] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/07/2024] [Revised: 03/05/2024] [Accepted: 03/11/2024] [Indexed: 03/13/2024]
Abstract
Tin-based perovskite solar cells (TPSCs) have received increasing attention due to their low toxicity, high theoretical efficiency, and potential applications as wearable devices. However, the inherent fast and uncontrollable crystallization process of tin-based perovskites results in high defect density in the film. Meanwhile, when fabricated into flexible devices, the prepared perovskite film exhibits inevitable brittleness and high Young's modulus, seriously weakening the mechanical stability. In this work, we design and synthesize a cross-linkable fullerene, thioctic acid functionalized C60 fulleropyrrolidinium iodide (FTAI), which has multiple interactions with perovskite components and can finely regulate the crystallization quality of perovskite film. The obtained perovskite film shows an increased grain size and a more matched energy level with the electron transport material, effectively improving the carrier extraction efficiency. The FTAI-based rigid device achieves a champion efficiency of 14.91 % with enhanced stability. More importantly, the FTAI located at the perovskite grain boundaries could spontaneously cross-link during the perovskite annealing process, which effectively improves the conductivity and elasticity of grain boundaries, thereby giving the film excellent bending resistance. Finally, the FTAI-based wearable device yields a record efficiency of 12.35 % and displays robust bending durability, retaining about 90 % of the initial efficiency after 10,000 bending times.
Collapse
Affiliation(s)
- Enlong Hou
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
| | - Jingfu Chen
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
| | - Jiefeng Luo
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
| | - Yuteng Fan
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
| | - Chao Sun
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
| | - Yu Ding
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
| | - Peng Xu
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
| | - Hui Zhang
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
| | - Shuo Cheng
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
| | - Xinjing Zhao
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
| | - Liqiang Xie
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
| | - Jiawei Yan
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
| | - Chengbo Tian
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
| | - Zhanhua Wei
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
| |
Collapse
|
5
|
Liu W, Huang G, Chen CY, Tan T, Fuyuki H, Hu S, Nakamura T, Truong MA, Murdey R, Hashikawa Y, Murata Y, Wakamiya A. An open-cage bis[60]fulleroid as an electron transport material for tin halide perovskite solar cells. Chem Commun (Camb) 2024; 60:2172-2175. [PMID: 38315560 DOI: 10.1039/d3cc05843c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2024]
Abstract
An open-cage bis[60]fulleroid (OC) was applied as an electron transport material (ETM) in tin (Sn) halide perovskite solar cells (PSCs). Due to the reduced offset between the energy levels of Sn-based perovskites and ETMs, the power conversion efficiency (PCE) of Sn-based PSCs with OC reached 9.6% with an open-circuit voltage (VOC) of 0.72 V. Additionally, OC exhibited superior thermal stability and provided 75% of the material without decomposition after vacuum deposition. The PSC using vacuum-deposited OC as the ETM could afford a PCE of 7.6%, which is a big leap forward compared with previous results using vacuum-deposited fullerene derivatives as ETMs.
Collapse
Affiliation(s)
- Wentao Liu
- Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan.
| | - Guanglin Huang
- Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan.
| | - Chien-Yu Chen
- Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan.
| | - Tiancheng Tan
- Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan.
| | - Harata Fuyuki
- Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan.
| | - Shuaifeng Hu
- Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan.
| | - Tomoya Nakamura
- Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan.
| | - Minh Anh Truong
- Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan.
| | - Richard Murdey
- Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan.
| | - Yoshifumi Hashikawa
- Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan.
| | - Yasujiro Murata
- Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan.
| | - Atsushi Wakamiya
- Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan.
| |
Collapse
|
6
|
Yang P, Sun C, Fu X, Cheng S, Chen J, Zhang H, Nan ZA, Yang J, Zhao XJ, Xie LQ, Meng L, Tian C, Wei Z. Efficient Tin-Based Perovskite Solar Cells Enabled by Precisely Synthesized Single-Isomer Fullerene Bisadducts with Regulated Molecular Packing. J Am Chem Soc 2024; 146:2494-2502. [PMID: 38129761 DOI: 10.1021/jacs.3c10515] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2023]
Abstract
Designing and synthesizing fullerene bisadducts with a higher-lying conduction band minimum is promising to further improve the device performance of tin-based perovskite solar cells (TPSCs). However, the commonly obtained fullerene bisadduct products are isomeric mixtures and require complicated separation. Moreover, the isomeric mixtures are prone to resulting in energy alignment disorders, interfacial charge loss, and limited device performance improvement. Herein, we synthesized single-isomer C60- and C70-based diethylmalonate functionalized bisadducts (C60BB and C70BB) by utilizing the steric-hindrance-assisted strategy and determined all molecular structures involved by single crystal diffraction. Meanwhile, we found that the different solvents used for processing the fullerene bisadducts can effectively regulate the molecular packing in their films. The dense and amorphous fullerene bisadduct films prepared by using anisole exhibited the highest electron mobility. Finally, C60BB- and C70BB-based TPSCs showed impressive efficiencies up to 14.51 and 14.28%, respectively. These devices also exhibited excellent long-term stability. This work highlights the importance of developing strategies to synthesize single-isomer fullerene bisadducts and regulate their molecular packing to improve TPSCs' performance.
Collapse
Affiliation(s)
- Panpan Yang
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, China
| | - Chao Sun
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, China
| | - Xifeng Fu
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures, and Fujian Provincial Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
| | - Shuo Cheng
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, China
| | - Jingfu Chen
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, China
| | - Hui Zhang
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, China
| | - Zi-Ang Nan
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures, and Fujian Provincial Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
| | - Jinxin Yang
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, China
| | - Xin-Jing Zhao
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, China
| | - Li-Qiang Xie
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, China
| | - Lingyi Meng
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures, and Fujian Provincial Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
| | - Chengbo Tian
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, China
| | - Zhanhua Wei
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, China
| |
Collapse
|
7
|
Hu S, Smith JA, Snaith HJ, Wakamiya A. Prospects for Tin-Containing Halide Perovskite Photovoltaics. PRECISION CHEMISTRY 2023; 1:69-82. [PMID: 37124243 PMCID: PMC10131267 DOI: 10.1021/prechem.3c00018] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/08/2023] [Revised: 03/14/2023] [Accepted: 04/03/2023] [Indexed: 05/02/2023]
Abstract
Tin-containing metal halide perovskites have enormous potential as photovoltaics, both in narrow band gap mixed tin-lead materials for all-perovskite tandems and for lead-free perovskites. The introduction of Sn(II), however, has significant effects on the solution chemistry, crystallization, defect states, and other material properties in halide perovskites. In this perspective, we summarize the main hurdles for tin-containing perovskites and highlight successful attempts made by the community to overcome them. We discuss important research directions for the development of these materials and propose some approaches to achieve a unified understanding of Sn incorporation. We particularly focus on the discussion of charge carrier dynamics and nonradiative losses at the interfaces between perovskite and charge extraction layers in p-i-n cells. We hope these insights will aid the community to accelerate the development of high-performance, stable single-junction tin-containing perovskite solar cells and all-perovskite tandems.
Collapse
Affiliation(s)
- Shuaifeng Hu
- Institute
for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011, Japan
- (S.H.)
| | - Joel A. Smith
- Clarendon
Laboratory, Department of Physics, University
of Oxford, Oxford OX1 3PU, U.K.
- (J.A.S.)
| | - Henry J. Snaith
- Clarendon
Laboratory, Department of Physics, University
of Oxford, Oxford OX1 3PU, U.K.
- (H.J.S.)
| | - Atsushi Wakamiya
- Institute
for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011, Japan
- (A.W.)
| |
Collapse
|