1
|
Xue G, Qin B, Ma C, Yin P, Liu C, Liu K. Large-Area Epitaxial Growth of Transition Metal Dichalcogenides. Chem Rev 2024; 124:9785-9865. [PMID: 39132950 DOI: 10.1021/acs.chemrev.3c00851] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/13/2024]
Abstract
Over the past decade, research on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high carrier mobility, significant excitonic effects, and strong spin-orbit couplings. Considerable attention from both scientific and industrial communities has fully fueled the exploration of TMDs toward practical applications. Proposed scenarios, such as ultrascaled transistors, on-chip photonics, flexible optoelectronics, and efficient electrocatalysis, critically depend on the scalable production of large-area TMD films. Correspondingly, substantial efforts have been devoted to refining the synthesizing methodology of 2D TMDs, which brought the field to a stage that necessitates a comprehensive summary. In this Review, we give a systematic overview of the basic designs and significant advancements in large-area epitaxial growth of TMDs. We first sketch out their fundamental structures and diverse properties. Subsequent discussion encompasses the state-of-the-art wafer-scale production designs, single-crystal epitaxial strategies, and techniques for structure modification and postprocessing. Additionally, we highlight the future directions for application-driven material fabrication and persistent challenges, aiming to inspire ongoing exploration along a revolution in the modern semiconductor industry.
Collapse
Affiliation(s)
- Guodong Xue
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Biao Qin
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Chaojie Ma
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Peng Yin
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Can Liu
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing 100871, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| |
Collapse
|
2
|
Ma Y, Liang H, Guan X, Xu S, Tao M, Liu X, Zheng Z, Yao J, Yang G. Two-dimensional layered material photodetectors: what could be the upcoming downstream applications beyond prototype devices? NANOSCALE HORIZONS 2024. [PMID: 39046195 DOI: 10.1039/d4nh00170b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/25/2024]
Abstract
With distinctive advantages spanning excellent flexibility, rich physical properties, strong electrostatic tunability, dangling-bond-free surface, and ease of integration, 2D layered materials (2DLMs) have demonstrated tremendous potential for photodetection. However, to date, most of the research enthusiasm has been merely focused on developing novel prototype devices. In the past few years, researchers have also been devoted to developing various downstream applications based on 2DLM photodetectors to contribute to promoting them from fundamental research to practical commercialization, and extensive accomplishments have been realized. In spite of the remarkable advancements, these fascinating research findings are relatively scattered. To date, there is still a lack of a systematic and profound summarization regarding this fast-evolving domain. This is not beneficial to researchers, especially researchers just entering this research field, who want to have a quick, timely, and comprehensive inspection of this fascinating domain. To address this issue, in this review, the emerging downstream applications of 2DLM photodetectors in extensive fields, including imaging, health monitoring, target tracking, optoelectronic logic operation, ultraviolet monitoring, optical communications, automatic driving, and acoustic signal detection, have been systematically summarized, with the focus on the underlying working mechanisms. At the end, the ongoing challenges of this rapidly progressing domain are identified, and the potential schemes to address them are envisioned, which aim at navigating the future exploration as well as fully exerting the pivotal roles of 2DLMs towards the practical optoelectronic industry.
Collapse
Affiliation(s)
- Yuhang Ma
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
- Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
| | - Huanrong Liang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
- Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
| | - Xinyi Guan
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
| | - Shuhua Xu
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
| | - Meiling Tao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
| | - Xinyue Liu
- Guangdong Provincial Key Laboratory of Nanophotonic Manipulation, Institute of Nanophotonics, Jinan University, Guangzhou 511443, China.
| | - Zhaoqiang Zheng
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, Guangdong, P. R. China.
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
- Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
- Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
| |
Collapse
|
3
|
Castelló O, Baptista SML, Watanabe K, Taniguchi T, Diez E, Velázquez-Pérez JE, Meziani YM, Caridad JM, Delgado-Notario JA. Impact of device resistances in the performance of graphene-based terahertz photodetectors. FRONTIERS OF OPTOELECTRONICS 2024; 17:19. [PMID: 38862706 PMCID: PMC11166907 DOI: 10.1007/s12200-024-00122-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/27/2024] [Accepted: 05/16/2024] [Indexed: 06/13/2024]
Abstract
In recent years, graphene field-effect-transistors (GFETs) have demonstrated an outstanding potential for terahertz (THz) photodetection due to their fast response and high-sensitivity. Such features are essential to enable emerging THz applications, including 6G wireless communications, quantum information, bioimaging and security. However, the overall performance of these photodetectors may be utterly compromised by the impact of internal resistances presented in the device, so-called access or parasitic resistances. In this work, we provide a detailed study of the influence of internal device resistances in the photoresponse of high-mobility dual-gate GFET detectors. Such dual-gate architectures allow us to fine tune (decrease) the internal resistance of the device by an order of magnitude and consequently demonstrate an improved responsivity and noise-equivalent-power values of the photodetector, respectively. Our results can be well understood by a series resistance model, as shown by the excellent agreement found between the experimental data and theoretical calculations. These findings are therefore relevant to understand and improve the overall performance of existing high-mobility graphene photodetectors.
Collapse
Affiliation(s)
- O Castelló
- Department of Applied Physics, University of Salamanca, 37008, Salamanca, Spain
- Unidad de Excelencia en Luz y Materia Estructurada (LUMES), University of Salamanca, 37008, Salamanca, Spain
| | | | - K Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - T Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - E Diez
- Nanotechnology Group, USAL-Nanolab, University of Salamanca, 37008, Salamanca, Spain
| | - J E Velázquez-Pérez
- Department of Applied Physics, University of Salamanca, 37008, Salamanca, Spain
- Nanotechnology Group, USAL-Nanolab, University of Salamanca, 37008, Salamanca, Spain
| | - Y M Meziani
- Department of Applied Physics, University of Salamanca, 37008, Salamanca, Spain
- Nanotechnology Group, USAL-Nanolab, University of Salamanca, 37008, Salamanca, Spain
| | - J M Caridad
- Department of Applied Physics, University of Salamanca, 37008, Salamanca, Spain.
- Unidad de Excelencia en Luz y Materia Estructurada (LUMES), University of Salamanca, 37008, Salamanca, Spain.
| | - J A Delgado-Notario
- Department of Applied Physics, University of Salamanca, 37008, Salamanca, Spain.
- Nanotechnology Group, USAL-Nanolab, University of Salamanca, 37008, Salamanca, Spain.
| |
Collapse
|
4
|
Li Y, Yu W, Zhang K, Cui N, Yun T, Xia X, Jiang Y, Zhang G, Mu H, Lin S. Two-dimensional topological semimetals: an emerging candidate for terahertz detectors and on-chip integration. MATERIALS HORIZONS 2024; 11:2572-2602. [PMID: 38482962 DOI: 10.1039/d3mh02250a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2024]
Abstract
The importance of terahertz (THz) detection lies in its ability to provide detailed information in a non-destructive manner, making it a valuable tool across various domains including spectroscopy, communication, and security. The ongoing development of THz detectors aims to enhance their sensitivity, resolution and integration into compact and portable devices such as handheld scanners or integrated communication chips. Generally, two-dimensional (2D) materials are considered potential candidates for device miniaturization but detecting THz radiation using 2D semiconductors is generally difficult due to the ultra-small photon energy. However, this challenge is being addressed by the advent of topological semimetals (TSM) with zero-bandgap characteristics. These semimetals offer low-energy excitations in proximity to the Dirac point, which is particularly important for applications requiring a broad detection range. Their distinctive band structures with linear energy-momentum dispersion near the Fermi level also lead to high electron mobility and low effective mass. The presence of topologically protected dissipationless conducting channels and self-powered response provides a basis for low-energy integration. In order to establish paradigms for semimetal-based THz detectors, this review initially offers an analytical summary of THz detection principles. Then, the review demonstrates the distinct design of devices, the excellent performance derived from the topological surface state and unique band structures in TSM. Finally, we outline the prospective avenues for on-chip integration of TSM-based THz detectors. We believe this review can promote further research on the new generation of THz detectors and facilitate advancements in THz imaging, spectroscopy, and communication systems.
Collapse
Affiliation(s)
- Yun Li
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
- Institute of Physics, Chinese Academy of Science, Beijing, 100190, P. R. China
| | - Wenzhi Yu
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
- Institute of Physics, Chinese Academy of Science, Beijing, 100190, P. R. China
| | - Kai Zhang
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
- MOE Key Laboratory of Laser Life Science &Guangdong Provincial Key Laboratory of Laser Life Science, College of Biophotonics, South China Normal University, Guangzhou 510631, China
| | - Nan Cui
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
| | - Tinghe Yun
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
| | - Xue Xia
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
- Institute of Physics, Chinese Academy of Science, Beijing, 100190, P. R. China
| | - Yan Jiang
- School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Guangyu Zhang
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
- Institute of Physics, Chinese Academy of Science, Beijing, 100190, P. R. China
| | - Haoran Mu
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
| | - Shenghuang Lin
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
| |
Collapse
|
5
|
Biswas S, Jang H, Lee Y, Choi H, Kim Y, Kim H, Zhu Y. Recent advancements in implantable neural links based on organic synaptic transistors. EXPLORATION (BEIJING, CHINA) 2024; 4:20220150. [PMID: 38855618 PMCID: PMC11022612 DOI: 10.1002/exp.20220150] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/15/2023] [Accepted: 09/15/2023] [Indexed: 06/11/2024]
Abstract
The progress of brain synaptic devices has witnessed an era of rapid and explosive growth. Because of their integrated storage, excellent plasticity and parallel computing, and system information processing abilities, various field effect transistors have been used to replicate the synapses of a human brain. Organic semiconductors are characterized by simplicity of processing, mechanical flexibility, low cost, biocompatibility, and flexibility, making them the most promising materials for implanted brain synaptic bioelectronics. Despite being used in numerous intelligent integrated circuits and implantable neural linkages with multiple terminals, organic synaptic transistors still face many obstacles that must be overcome to advance their development. A comprehensive review would be an excellent tool in this respect. Therefore, the latest advancements in implantable neural links based on organic synaptic transistors are outlined. First, the distinction between conventional and synaptic transistors are highlighted. Next, the existing implanted organic synaptic transistors and their applicability to the brain as a neural link are summarized. Finally, the potential research directions are discussed.
Collapse
Affiliation(s)
- Swarup Biswas
- School of Electrical and Computer Engineering, Center for Smart Sensor System of Seoul (CS4)University of SeoulSeoulRepublic of Korea
| | - Hyo‐won Jang
- School of Electrical and Computer Engineering, Center for Smart Sensor System of Seoul (CS4)University of SeoulSeoulRepublic of Korea
| | - Yongju Lee
- School of Electrical and Computer Engineering, Center for Smart Sensor System of Seoul (CS4)University of SeoulSeoulRepublic of Korea
- Terasaki Institute for Biomedical InnovationLos AngelesCaliforniaUSA
| | - Hyojeong Choi
- School of Electrical and Computer Engineering, Center for Smart Sensor System of Seoul (CS4)University of SeoulSeoulRepublic of Korea
- Terasaki Institute for Biomedical InnovationLos AngelesCaliforniaUSA
| | - Yoon Kim
- School of Electrical and Computer Engineering, Center for Smart Sensor System of Seoul (CS4)University of SeoulSeoulRepublic of Korea
| | - Hyeok Kim
- School of Electrical and Computer Engineering, Center for Smart Sensor System of Seoul (CS4)University of SeoulSeoulRepublic of Korea
- Terasaki Institute for Biomedical InnovationLos AngelesCaliforniaUSA
- Central Business, SENSOMEDICheongju‐siRepublic of Korea
- Institute of Sensor System, SENSOMEDICheongjuRepublic of Korea
- Energy FlexSeoulRepublic of Korea
| | - Yangzhi Zhu
- Terasaki Institute for Biomedical InnovationLos AngelesCaliforniaUSA
| |
Collapse
|
6
|
Zhao Q, Chen L, Liang F, Wang S, Wang G, Yu H, Zhang H. Angular Engineering Strategy for Enhanced Surface Nonlinear Frequency Conversion in Centrosymmetric Topological Semimetal HfGe 0.92Te. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2310438. [PMID: 38165969 DOI: 10.1002/adma.202310438] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/08/2023] [Revised: 12/22/2023] [Indexed: 01/04/2024]
Abstract
Surface nonlinear optics are essential for developments in integrated photonics and micro/nano optoelectronics. However, the nonlinear optical conversion efficiency on a surface is restricted by the finite nonlinear susceptibility of matter and the intrinsic atomic-layered interaction length between light and matter. In this work, based on an angular engineering strategy, it is demonstrated that the centrosymmetric topological semimetal HfGe0.92Te crystal has a giant and anisotropic surface second-order nonlinear susceptibility up to 5535 ± 308 pm V-1 and exhibits efficient and unprecedented second-harmonic generation (SHG). The maximum optical conversion efficiency is found to be up to 3.75‰, which is 104 times higher than that obtained from a silicon surface. Because of the linear dispersion over a wide range of energies around the Dirac points, this high conversion efficiency can be maintained with SHG wavelengths ranging from the visible region (779 nm) to the deep-UV region (257.5 nm). This study can facilitate the development of topological photonics and integrated nonlinear photonics based on topological semimetals.
Collapse
Affiliation(s)
- Qiming Zhao
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Long Chen
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Fei Liang
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China
- Institute of Materials Science, TU Darmstadt, 64287, Darmstadt, Germany
| | - Shuxian Wang
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Gang Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Haohai Yu
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Huaijin Zhang
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China
| |
Collapse
|
7
|
Si W, Zhou W, Liu X, Wang K, Liao Y, Yan F, Ji X. Recent Advances in Broadband Photodetectors from Infrared to Terahertz. MICROMACHINES 2024; 15:427. [PMID: 38675239 PMCID: PMC11051910 DOI: 10.3390/mi15040427] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/19/2024] [Revised: 03/15/2024] [Accepted: 03/19/2024] [Indexed: 04/28/2024]
Abstract
The growing need for the multiband photodetection of a single scene has promoted the development of both multispectral coupling and broadband detection technologies. Photodetectors operating across the infrared (IR) to terahertz (THz) regions have many applications such as in optical communications, sensing imaging, material identification, and biomedical detection. In this review, we present a comprehensive overview of the latest advances in broadband photodetectors operating in the infrared to terahertz range, highlighting their classification, operating principles, and performance characteristics. We discuss the challenges faced in achieving broadband detection and summarize various strategies employed to extend the spectral response of photodetectors. Lastly, we conclude by outlining future research directions in the field of broadband photodetection, including the utilization of novel materials, artificial microstructure, and integration schemes to overcome current limitations. These innovative methodologies have the potential to achieve high-performance, ultra-broadband photodetectors.
Collapse
Affiliation(s)
- Wei Si
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
| | - Wenbin Zhou
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
| | - Xiangze Liu
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
| | - Ke Wang
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
| | - Yiming Liao
- School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Feng Yan
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
| | - Xiaoli Ji
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
| |
Collapse
|
8
|
Xiao N, Duan X, Zhang S, Zhou B, Zhou B. The anisotropic transport properties of the three-terminal ballistic junction based on α- T3lattice. NANOTECHNOLOGY 2024; 35:175208. [PMID: 38241722 DOI: 10.1088/1361-6528/ad209e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/08/2023] [Accepted: 01/19/2024] [Indexed: 01/21/2024]
Abstract
The three-terminal ballistic junction (TBJ) has promising applications in nanoelectronics. We investigate the transport properties of aα-T3-based TBJ, where two typical configurations are considered, i.e. the A- and Z-TBJ. It is found that both A- and Z-TBJ exhibit transmission anisotropy, and the transmission of the A-TBJ has stronger anisotropy than that of the Z-TBJ. The amplitude of the rectification coefficient is smaller than that of phosphorene TBJ, but larger than that of graphene TBJ. When the symmetrical input is applied, the output voltage curve exhibits symmetric behavior. While in the case of asymmetric input, the symmetric behavior is broken, and the maximum value of the output voltage can reach a positive value. Interestingly, the voltage output shows a dramatic nonlinear response which may be useful for the voltage diode application with a push-pull input voltage. In addition, the heat fluxes of the asymmetric input are much smaller than those of the symmetric input. The maximum value of the heat flux under the symmetric input exceeds twice of that under the asymmetric input. Our results are useful to design nanoelectronic devices based onα-T3TBJ.
Collapse
Affiliation(s)
- Ningyan Xiao
- Department of Physics, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Key Laboratory for Matter Microstructure and Function of Hunan Province, Hunan Normal University, Changsha 410081, People's Republic of China
| | - Xian Duan
- Institute of Mathematics and Physics, Central South University of Forestry and Technology, Changsha 410004, People's Republic of China
| | - Siyan Zhang
- Department of Physics, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Key Laboratory for Matter Microstructure and Function of Hunan Province, Hunan Normal University, Changsha 410081, People's Republic of China
| | - Benliang Zhou
- Department of Physics, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Key Laboratory for Matter Microstructure and Function of Hunan Province, Hunan Normal University, Changsha 410081, People's Republic of China
| | - Benhu Zhou
- Department of Physics, Shaoyang University, Shaoyang 422001, People's Republic of China
| |
Collapse
|
9
|
Xin W, Zhong W, Shi Y, Shi Y, Jing J, Xu T, Guo J, Liu W, Li Y, Liang Z, Xin X, Cheng J, Hu W, Xu H, Liu Y. Low-Dimensional-Materials-Based Photodetectors for Next-Generation Polarized Detection and Imaging. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2306772. [PMID: 37661841 DOI: 10.1002/adma.202306772] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/10/2023] [Revised: 08/22/2023] [Indexed: 09/05/2023]
Abstract
The vector characteristics of light and the vectorial transformations during its transmission lay a foundation for polarized photodetection of objects, which broadens the applications of related detectors in complex environments. With the breakthrough of low-dimensional materials (LDMs) in optics and electronics over the past few years, the combination of these novel LDMs and traditional working modes is expected to bring new development opportunities in this field. Here, the state-of-the-art progress of LDMs, as polarization-sensitive components in polarized photodetection and even the imaging, is the main focus, with emphasis on the relationship between traditional working principle of polarized photodetectors (PPs) and photoresponse mechanisms of LDMs. Particularly, from the view of constitutive equations, the existing works are reorganized, reclassified, and reviewed. Perspectives on the opportunities and challenges are also discussed. It is hoped that this work can provide a more general overview in the use of LDMs in this field, sorting out the way of related devices for "more than Moore" or even the "beyond Moore" research.
Collapse
Affiliation(s)
- Wei Xin
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Weiheng Zhong
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Yujie Shi
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Yimeng Shi
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Jiawei Jing
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Tengfei Xu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Jiaxiang Guo
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Weizhen Liu
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Yuanzheng Li
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Zhongzhu Liang
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Xing Xin
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Jinluo Cheng
- GPL Photonics Laboratory, State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin, 130033, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Haiyang Xu
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Yichun Liu
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| |
Collapse
|
10
|
Lin WC, Tsai PY, Zou JZ, Lee JY, Kuo CW, Lee HH, Pan CY, Yang CH, Chen SZ, Wang JS, Jiang PH, Liang CT, Chuang C. Chiral anomaly and Weyl orbit in three-dimensional Dirac semimetal Cd 3As 2grown on Si. NANOTECHNOLOGY 2024; 35:165002. [PMID: 38154139 DOI: 10.1088/1361-6528/ad1941] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/06/2023] [Accepted: 12/27/2023] [Indexed: 12/30/2023]
Abstract
Preparing Cd3As2, which is a three-dimensional (3D) Dirac semimetal in certain crystal orientation, on Si is highly desirable as such a sample may well be fully compatible with existing Si CMOS technology. However, there is a dearth of such a study regarding Cd3As2films grown on Si showing the chiral anomaly. Here,for the first time, we report the novel preparation and fabrication technique of a Cd3As2(112) film on a Si (111) substrate with a ZnTe (111) buffer layer which explicitly shows the chiral anomaly with a nontrivial Berry's phase ofπ. Despite the Hall carrier density (n3D≈9.42×1017cm-3) of our Cd3As2film, which is almost beyond the limit for the portents of a 3D Dirac semimetal to emerge, we observe large linear magnetoresistance in a perpendicular magnetic field and negative magnetoresistance in a parallel magnetic field. These results clearly demonstrate the chiral magnetic effect and 3D Dirac semimetallic behavior in our silicon-based Cd3As2film. Our tailoring growth of Cd3As2on a conventional substrate such as Si keeps the sample quality, while also achieving a low carrier concentration.
Collapse
Affiliation(s)
- Wei-Chen Lin
- Taiwan International Graduate Program, Academia Sinica, Taipei 115, Taiwan
- Department of Engineering and System Science, National Tsing Hua University, Hsinchu 300, Taiwan
| | - Peng-Ying Tsai
- Graduate Institute of Applied Physics, National Taiwan University, Taipei 106, Taiwan
| | - Jia-Zhu Zou
- National Taiwan University, Taipei 106, Taiwan
| | | | - Chun-Wei Kuo
- Department of Electronic Engineering, Chung Yuan Christian University, Taoyuan 320, Taiwan
| | - Hsin-Hsuan Lee
- Department of Physics, Chung Yuan Christian University, Taoyuan 320, Taiwan
| | - Ching-Yang Pan
- Department of Physics, National Taiwan Normal University 106, Taiwan
| | - Cheng-Hsueh Yang
- Graduate Institute of Applied Physics, National Taiwan University, Taipei 106, Taiwan
| | | | - Jyh-Shyang Wang
- Department of Physics, Chung Yuan Christian University, Taoyuan 320, Taiwan
- Research Center for Semiconductor Materials and Advanced Optics, Chung Yuan Christian University, Taoyuan, 320, Taiwan
| | - Pei-Hsun Jiang
- Department of Physics, National Taiwan Normal University 106, Taiwan
| | - Chi-Te Liang
- Graduate Institute of Applied Physics, National Taiwan University, Taipei 106, Taiwan
- National Taiwan University, Taipei 106, Taiwan
| | - Chiashain Chuang
- Department of Electronic Engineering, Chung Yuan Christian University, Taoyuan 320, Taiwan
- Research Center for Semiconductor Materials and Advanced Optics, Chung Yuan Christian University, Taoyuan, 320, Taiwan
| |
Collapse
|
11
|
Yar A, Sultana R. Nonlinear Hall effect in monolayer phosphorene with broken inversion symmetry. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35:165701. [PMID: 36825779 DOI: 10.1088/1361-648x/acbc02] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2022] [Accepted: 02/14/2023] [Indexed: 06/18/2023]
Abstract
Nonlinear Hall effect (NLHE), a new member of the family of Hall effects, in monolayer phosphorene is investigated. We find that phosphorene exhibits pronounced NLHE, arising from the dipole moment of the Berry curvature induced by the proximity effect that breaks the inversion symmetry of the system. Remarkably, the nonlinear Hall response exhibits central minimum with a width on the order of the band gap, followed by two resonance-like peaks. Interestingly, each resonance peak of the Hall response shifts in the negative region of the chemical potential which is consistent with the shift of valence and conduction bands in the energy spectrum of monolayer phosphorene. It is observed that the two peaks are asymmetric, originated from anisotropy in the band structure of phosphorene. It is shown that the NLHE is very sensitive to the band gap and temperature of the system. Moreover, we find that a phase transition occurs in the nonlinear Hall response and nonlinear spin Hall conductivity of the system under the influence of spin-orbit interaction, tuned by the strength of interaction and band gap induced in the energy spectrum of monolayer phosphorene with broken inversion symmetry.
Collapse
Affiliation(s)
- Abdullah Yar
- Department of Physics, Kohat University of Science and Technology, Kohat 26000, Khyber Pakhtunkhwa, Pakistan
| | - Rifat Sultana
- Department of Physics, Kohat University of Science and Technology, Kohat 26000, Khyber Pakhtunkhwa, Pakistan
| |
Collapse
|