Room-Temperature Magnetism in 2D MnGa4 -H Induced by Hydrogen Insertion

Gallium-Based Liquid Metals in Rechargeable Batteries: From Properties to Applications

Gallium-based (Ga-based) liquid metals have attracted considerable interest due to their low melting points, enabling them to feature both liquid properties and metallic properties at room temperature. In light of this, Ga-based liquid metals also possess excellent deformability, high electrical and thermal conductivity, superior metal affinity, and unique self-limited surface oxide, making them popular functional materials in energy storage. This provides a possibility to construct high-performance rechargeable batteries that are deformable, free of dendrite growth, and so on. This review primarily starts with the property of Ga-based liquid metal, and then focuses on the potential applications in rechargeable batteries by exploiting these advantages, aiming to construct the correlation between properties and structures. The glorious applications contain interface protection, self-healing electrode construction, thermal management, and flexible batteries. Finally, the opportunities and obstacles for the applications of liquid metal in batteries are presented.

Ultrathin Van der Waals Lanthanum Oxychloride Dielectric for 2D Field-Effect Transistors

Downsizing silicon-based transistors can result in lower power consumption, faster speeds, and greater computational capacity, although it is accompanied by the appearance of short-channel effects. The integration of high-mobility 2D semiconductor channels with ultrathin high dielectric constant (high-κ) dielectric in transistors is expected to suppress the effect. Nevertheless, the absence of a high-κ dielectric layer featuring an atomically smooth surface devoid of dangling bonds poses a significant obstacle in the advancement of 2D electronics. Here, ultrathin van der Waals (vdW) lanthanum oxychloride (LaOCl) dielectrics are successfully synthesized by precisely controlling the growth kinetics. These dielectrics demonstrate an impressive high-κ value of 10.8 and exhibit a remarkable breakdown field strength (Ebd ) exceeding 10 MV cm-1 . Remarkably, the conventional molybdenum disulfide (MoS2 ) field-effect transistor (FET) featuring a dielectric made of LaOCl showcases an almost negligible hysteresis when compared to FETs employing alternative gate dielectrics. This can be attributed to the flawlessly formed vdW interface and excellent compatibility established between LaOCl and MoS2 . These findings will motivate the further exploration of rare-earth oxychlorides and the development of more-than-Moore nanoelectronic devices.

Strong Room-Temperature Ferromagnetism in Ultrathin NiOOH Nanosheets through Surfactant Manipulation

Two-dimensional (2D) ferromagnetic (FM) materials with nanoscale thickness and spontaneous net magnetization have emerged as a promising class of functional materials for applications in next-generation spintronics, quantum processing, and data storage devices. However, most 2D materials exhibit weak FM even at low temperatures, limiting their potential applications in many technological fields. The fabrication of strong room-temperature FM 2D materials is highly desirable for the development of practical applications. Here, we demonstrate an ionic layer epitaxy strategy to synthesize few-layered NiOOH nanosheets with strong room-temperature FM and a saturation magnetization up to 409.86 emu cm-3 at 300 K. The results are consistent with the ab initio predictions of a stable FM NiOOH nanolayer structure with an FM configuration. The FM strength of the NiOOH nanosheets can be tuned by controlling the surfactant monolayer density and annealing. This work offers a promising strategy for achieving strong high-temperature FM in 2D materials for spintronic applications.