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Zhao Z, Han X, Zhu S, Fang Z, Han Z, Liang Z, Li B, Zhang B, Li W, Luo Z, Peng L, Zhao X, Li X, Zhou J, Gao S, Wang C, Kläui M, Hou Y. The evolution of chemical ordering and property in Fe 1+x Se 2 upon intercalation ratios. Natl Sci Rev 2025; 12:nwae430. [PMID: 39830402 PMCID: PMC11737390 DOI: 10.1093/nsr/nwae430] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/16/2024] [Revised: 10/26/2024] [Accepted: 11/01/2024] [Indexed: 01/22/2025] Open
Abstract
Intercalation has been considered as an effective method to explore innovative two-dimensional (2D) materials and modify their properties. However, the relationship between intercalation concentration, structure, and property remains a largely uncharted territory, and the controllable synthesis of desired intercalated phases faces challenges. Here, a general intercalated rule for the effect of self-intercalation ratio on atomic arrangements is revealed. Then, the controllable synthesis of a series of Fe-intercalated 2D materials is realized. Scanning transmission electron microscopy illustrates that their intercalation structures undergo disordered/ordered/half-ordered/ordered transformation, which confirms the intercalated rule and proposes a new structure termed half-ordered intercalation. Notably, their magnetic and electrical properties can be significantly modulated by intercalation. Orderly intercalated nanoflakes possess room-temperature magnetism with composition-regulated magnetic domains. Moreover, Fe1.5Se2 and Fe1.6Se2 are scarce half-metallic materials showing different magneto-resistance behaviors. This work would guide the design and synthesis of new intercalated materials, and deepen the understanding of the relationship between structure and properties.
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Affiliation(s)
- Zijing Zhao
- School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Peking University, Beijing 100871, China
- School of Materials, Shenzhen Campus of Sun Yat-sen University, Shenzhen 518107, China
- School of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing 100124, China
| | - Xiaocang Han
- School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Peking University, Beijing 100871, China
| | - Shengcai Zhu
- School of Materials, Shenzhen Campus of Sun Yat-sen University, Shenzhen 518107, China
| | - Zhi Fang
- School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Peking University, Beijing 100871, China
| | - Ziyi Han
- School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Peking University, Beijing 100871, China
| | - Zhongyu Liang
- State Key Laboratory for Artificial Microstructure & Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Bailing Li
- School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Peking University, Beijing 100871, China
| | - Biao Zhang
- School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Peking University, Beijing 100871, China
| | - Wei Li
- School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Peking University, Beijing 100871, China
| | - Zhaochu Luo
- State Key Laboratory for Artificial Microstructure & Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Licong Peng
- School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Peking University, Beijing 100871, China
| | - Xiaoxu Zhao
- School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Peking University, Beijing 100871, China
| | - Xiangguo Li
- School of Materials, Shenzhen Campus of Sun Yat-sen University, Shenzhen 518107, China
| | - Jiadong Zhou
- Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Song Gao
- School of Chemistry, Sun Yat-sen University, Guangzhou 510275, China
| | - Chengxin Wang
- School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou 510275, China
| | - Mathias Kläui
- Institute of Physics, Johannes Gutenberg University Mainz, Mainz 55128, Germany
| | - Yanglong Hou
- School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Peking University, Beijing 100871, China
- School of Materials, Shenzhen Campus of Sun Yat-sen University, Shenzhen 518107, China
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Wang H, Wen Y, Zeng H, Xiong Z, Tu Y, Zhu H, Cheng R, Yin L, Jiang J, Zhai B, Liu C, Shan C, He J. 2D Ferroic Materials for Nonvolatile Memory Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2305044. [PMID: 37486859 DOI: 10.1002/adma.202305044] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/28/2023] [Revised: 07/21/2023] [Indexed: 07/26/2023]
Abstract
The emerging nonvolatile memory technologies based on ferroic materials are promising for producing high-speed, low-power, and high-density memory in the field of integrated circuits. Long-range ferroic orders observed in 2D materials have triggered extensive research interest in 2D magnets, 2D ferroelectrics, 2D multiferroics, and their device applications. Devices based on 2D ferroic materials and heterostructures with an atomically smooth interface and ultrathin thickness have exhibited impressive properties and significant potential for developing advanced nonvolatile memory. In this context, a systematic review of emergent 2D ferroic materials is conducted here, emphasizing their recent research on nonvolatile memory applications, with a view to proposing brighter prospects for 2D magnetic materials, 2D ferroelectric materials, 2D multiferroic materials, and their relevant devices.
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Affiliation(s)
- Hao Wang
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Hui Zeng
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Ziren Xiong
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yangyuan Tu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Hao Zhu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Lei Yin
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Jian Jiang
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Baoxing Zhai
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Chuansheng Liu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou, 450052, China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
- Hubei Luojia Laboratory, Wuhan, 430079, China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, China
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