Extremely Stable Current Emission of P-Doped SiC Flexible Field Emitters

Solution Processed Schottky Diodes Enabled by Silicon Carbide Nanowires for Harsh Environment Applications

Silicon carbide nanowires (SiC NWs) exhibit promising features to allow solution-processable electronics to be deployed in harsh environments. By utilizing a nanoscale form of SiC, we were able to disperse the material into liquid solvents, while maintaining the resilience of bulk SiC. This letter reports the fabrication of SiC NW Schottky diodes. Each diode consisted of just one nanowire with an approximate diameter of 160 nm. In addition to analyzing the diode performance, the effects of elevated temperatures and proton irradiation on the current-voltage characteristics of SiC NW Schottky diodes were also examined. The device could maintain similar values for ideality factor, barrier height, and effective Richardson constant upon proton irradiation with a fluence of 10¹⁶ ion/cm² at 873 K. As a result, these metrics have clearly demonstrated the high-temperature tolerance and irradiation resistance of SiC NWs, ultimately indicating that they may provide utility in allowing solution-processable electronics in harsh environments.

Schottky-Contacted High-Performance GaSb Nanowires Photodetectors Enabled by Lead-Free All-Inorganic Perovskites Decoration

The surface Fermi level pinning effect promotes the formation of metal-independent Ohmic contacts for the high-speed GaSb nanowires (NWs) electronic devices, however, it limits next-generation optoelectronic devices. In this work, lead-free all-inorganic perovskites with broad bandgaps and low work functions are adopted to decorate the surfaces of GaSb NWs, demonstrating the success in the construction of Schottky-contacts by surface engineering. Benefiting from the expected Schottky barrier, the dark current is reduced to 2 pA, the I_light /I_dark ratio is improved to 10³ and the response time is reduced by more than 15 times. Furthermore, a Schottky-contacted parallel array GaSb NWs photodetector is also fabricated by the contact printing technology, showing a higher photocurrent and a low dark current of 15 pA, along with the good infrared photodetection ability for a concealed target. All results guide the construction of Schottky-contacts by surface decorations for next-generation high-performance III-V NWs optoelectronics devices.

High-Performance Field Emitters Based on SiC Nanowires with Designed Electron Emission Sites

Making field emitters with both low turn-on field (E_to) and high current emission stability is one of the keys to push forward their practical applications. In the present work, we report the exploration of high-performance field emitters with designed sharp corners around SiC nanowires for fundamentally enhanced electron emission sites. The sharp corners with tailored densities are rationally created based on a facile etching technique. Accordingly, the emission sites and nanowires are integrated into a single-crystalline configuration without interfaces, which could offer the emitters with a robust structure to avoid the structural damage induced by the generated Joule heat and electrostatic forces over long-term field emission (FE) operation. Consequently, the E_to of the as-fabricated SiC field emitter is low down to 0.52 V/μm, which is comparable to the state-of-the-art one ever reported. Moreover, they have high electron emission stability with a current fluctuation of just 2% over 10 h, representing their promising applications in FE-based electronic units.

High temperature silicon-carbide-based flexible electronics for monitoring hazardous environments

With its unprecedented properties over conventional rigid platforms, flexible electronics have been a significant research topic in the last decade, offering a broad range of applications from bendable display, flexible solar-energy systems, to soft implantable-devices for health monitoring. Flexible electronics for harsh and hazardous environments have also been extensively investigated. In particular, devices with stretchability and bend-ability as well as tolerance to extreme and toxic operating conditions are imperative. This work presents silicon carbide grown on silicon and then transferred onto polyimide substrate as a new platform for flexible sensors for hostile environments. Combining the excellent electrical properties of SiC and high temperature tolerance of polyimide, we demonstrated for the first time a flexible SiC sensors that can work above 400 °C. This new sensing platform opens exciting opportunities toward flexible sensing applications in hazardous environments.

Ti3C2 (MXene) based field electron emitters

As a novel class of two-dimensional materials, MXene has provoked tremendous progress for various applications in functional devices. Here, we pioneer a preliminary understanding on the field emission behavior of MXene for the first time. Ti₃C₂ paper is fabricated by using facile filtration method, and multiple vertical sheets appear on the surface of MXene paper with high electrical conductivity (2.93 × 10⁵ S m^-1) and low work function (3.77 eV). The field electron emission performance and electric field distribution on MXene emitters are measured and simulated under planar and standing conditions. Both emitter conditions exhibit stable, uniform electron emission pattern, and the standing emitter achieves high emission current density of 59 mA cm^-2 under 7.5 V μm^-1. This work demonstrates the feasibility of MXene as cold electron source, establishing a preliminary foundation for its applications in field emission-based devices.

Advances in Rational Design and Materials of High-Performance Stretchable Electromechanical Sensors

Stretchable and wearable sensor technology has attracted significant interests and created high technological impact on portable healthcare and smart human-machine interfaces. Wearable electromechanical systems are an important part of this technology that has recently witnessed tremendous progress toward high-performance devices for commercialization. Over the past few years, great attention has been paid to simultaneously enhance the sensitivity and stretchability of the electromechanical sensors toward high sensitivity, ultra-stretchability, low power consumption or self-power functionalities, miniaturisation as well as simplicity in design and fabrication. This work presents state-of-the-art advanced materials and rational designs of electromechanical sensors for wearable applications. Advances in various sensing concepts and structural designs for intrinsic stretchable conductive materials as well as advanced rational platforms are discussed. In addition, the practical applications and challenges in the development of stretchable electromechanical sensors are briefly mentioned and highlighted.

Effect of Piezoresistive Behavior on Electron Emission from Individual Silicon Carbide Nanowire

The excellent properties of silicon carbide (SiC) make it widely applied in high-voltage, high-power, and high-temperature electronic devices. SiC nanowires combine the excellent physical properties of SiC material and the advantages of nanoscale structures, thus attracting significant attention from researchers. Herein, the electron vacuum tunneling emission characteristics of an individual SiC nanowire affected by the piezoresistive effect are investigated using in situ electric measurement in a scanning electron microscope (SEM) chamber. The results demonstrate that the piezoresistive effect caused by the electrostatic force has a significant impact on the electronic transport properties of the nanowire, and the excellent electron emission characteristics can be achieved in the pulse voltage driving mode, including lower turn-on voltage and higher maximum current. Furthermore, a physical model about the piezoresistive effect of SiC nanowire is proposed to explain the transformation of electronic transport under the action of electrostatic force in DC voltage and pulsed voltage driving modes. The findings can provide a way to obtain excellent electron emission characteristics from SiC nanowires.

Selective growth of zinc blende, wurtzite and hybrid SiC nanowires via a simple chemical vapor deposition route

3C-SiC, 2H-SiC and their hybrid nanowires were synthesized in a controllable manner via changing CH₄ flow rates. It is found that higher CH₄ supply facilitates the wurtzite phase growth, while the other phases formed when decreasing the flow rate.

Flexible Transparent and Free-Standing SiC Nanowires Fabric: Stretchable UV Absorber and Fast-Response UV-A Detector

Transparent and flexible materials are desired for the construction of photoelectric multifunctional integrated devices and portable electronics. Herein, 2H-SiC nanowires are assembled into a flexible, transparent, self-standing nanowire fabric (FTS-NWsF). The as-synthesized ultralong nanowires form high-quality crystals with a few stacking faults. The optical transmission spectra reveal that FTS-NWsF absorbs most incident 200-400 nm light, but remains transparent to visible light. A polydimethylsiloxane (PDMS)-SiC fabric-PDMS sandwich film device exhibits stable electrical output even when repeatedly stretched by up to 50%. Unlike previous SiC nanowires in which stacking faults are prevalent, the transparent, stretchable SiC fabric shows considerable photoelectric activity and exhibits a rapid photoresponse (rise and decay time < 30 ms) to 340-400 nm light, covering most of the UV-A spectral region. These advances represent significant progress in the design of functional optoelectronic SiC nanowires and transparent and stretchable optoelectronic systems.

Superior B-Doped SiC Nanowire Flexible Field Emitters: Ultra-Low Turn-On Fields and Robust Stabilities against Harsh Environments

Low turn-on fields together with boosted stabilities are recognized as two key factors for pushing forward the implementations of the field emitters in electronic units. In current work, we explored superior flexible field emitters based on single-crystalline 3C-SiC nanowires, which had numbers of sharp edges, as well as corners surrounding the wire body and B dopants. The as-constructed field emitters behaved exceptional field emission (FE) behaviors with ultralow turn-on fields (E_to) of 0.94-0.68 V/μm and current emission fluctuations of ±1.0-3.4%, when subjected to harsh working conditions under different bending cycles, various bending configurations, as well as elevated temperature environments. The sharp edges together with the edges were able to significantly increase the electron emission sites, and the incorporated B dopants could bring a more localized state close to the Fermi level, which rendered the SiC nanowire emitters with low E_to, large field enhancement factor as well as robust current emission stabilities. Current B-doped SiC nanowires could meet all essential requirements for an ideal flexible emitters, which exhibit their promising prospect to be applied in flexible electronic units.

High-Performance Field-Emission Properties of Boron Nitride Nanotube Field Emitters

Boron nitride nanotubes (BNNTs) have attracted considerable attention as a field emission material because of their high mechanical strength, high negative electron affinity, and high oxidation resistance. Nevertheless, the obtained field-emission properties of BNNTs have indicated poor emission performance, which is a very high turn-on electric field with a low emission current. We fabricated BNNT field emitters and investigated their field-emission properties. The field-emission properties of the BNNT field emitters were considerably enhanced compared to those of other BN nanomaterial-based field emitters. The turn-on and the threshold electric fields of the BNNT field emitter were 3.1 and 5.4 V/μm at the gap distance of 750 μm, respectively. Both the turn-on and the threshold electric fields of the BNNT field emitters were decreased by increasing the gap distance between the emitter tip and the anode electrode. Degradation of the emission current during field emission operation for 20 h showed no significant difference according to the gap distance. Emission current fluctuation of the BNNT field emitters showed that the smaller gap was more unstable than the larger gap. The enhanced emission properties are mainly attributed to the small diameter, high-quality, and straight structure of BNNTs as well as the stable network formation of the BNNT film with good mechanical and electrical contact between the BNNTs and the cathode electrode. The remarkable emission performance of the BNNT field emitters might have promising applications for various field-emission devices.

RGO enveloped vertically aligned Co3O4 nanowires on carbon fabric: a highly efficient prototype for flexible field emitter arrays

RGO enveloped Co₃O₄ nanowires on flexible carbon fabric exhibit a splendid field emission performance with remarkably enhanced current density.

Enhancing photoluminescence properties of SiC/SiO2 coaxial nanocables by making oxygen vacancies

Enhanced photoluminescence properties of SiC/SiO₂ coaxial nanocables by making oxygen vacancies.