Tribotronic Enhanced Photoresponsivity of a MoS2 Phototransistor

Using Natural Dye Additives to Enhance the Energy Conversion Performance of a Cellulose Paper-Based Triboelectric Nanogenerator

Green and sustainable power sources for next-generation electronics are being developed. A cellulose paper-based triboelectric nanogenerator (TENG) was fabricated to harness mechanical energy and convert it into electricity. This work proposes a novel approach to modify cellulose paper with natural dyes, including chlorophyll from spinach, anthocyanin from red cabbage, and curcumin from turmeric, to enhance the power output of a TENG. All the natural dyes are found to effectively improve the energy conversion performance of a cellulose paper-based TENG due to their photogenerated charges. The highest power density of 3.3 W/m2 is achieved from the cellulose paper-based TENG modified with chlorophyll, which is higher than those modified with anthocyanin and curcumin, respectively. The superior performance is attributed not only to the photosensitizer properties but also the molecular structure of the dye that promotes the electron-donating properties of cellulose.

Biodegradable albumen dielectrics for high-mobility MoS2 phototransistors

This work demonstrates the fabrication and characterization of single-layer MoS2 field-effect transistors using biodegradable albumen (chicken eggwhite) as gate dielectric. By introducing albumen as an insulator for MoS2 transistors high carrier mobilities (up to ~90 cm2 V-1 s-1) are observed, which is remarkably superior to that obtained with commonly used SiO2 dielectric which we attribute to ionic gating due to the formation of an electric double layer in the albumen MoS2 interface. In addition, the investigated devices are characterized upon illumination, observing responsivities of 4.5 AW-1 (operated in photogating regime) and rise times as low as 52 ms (operated in photoconductivity regime). The presented study reveals the combination of albumen with van der Waals materials for prospective biodegradable and biocompatible optoelectronic device applications. Furthermore, the demonstrated universal fabrication process can be easily adopted to fabricate albumen-based devices with any other van der Waals material.

High photoresponsivity MoS2phototransistor through enhanced hole trapping HfO2gate dielectric

Phototransistor using 2D semiconductor as the channel material has shown promising potential for high sensitivity photo detection. The high photoresponsivity is often attributed to the photogating effect, where photo excited holes are trapped at the gate dielectric interface that provides additional gate electric field to enhance channel charge carrier density. Gate dielectric material and its deposition processing conditions can have great effect on the interface states. Here, we use HfO2gate dielectric with proper thermal annealing to demonstrate a high photoresponsivity MoS2phototransistor. When HfO2is annealed in H2atmosphere, the photoresponsivity is enhanced by an order of magnitude as compared with that of a phototransistor using HfO2without annealing or annealed in Ar atmosphere. The enhancement is attributed to the hole trapping states introduced at HfO2interface through H2annealing process, which greatly enhances photogating effect. The phototransistor exhibits a very large photoresponsivity of 1.1 × 107A W-1and photogain of 3.3 × 107under low light illumination intensity. This study provides a processing technique to fabricate highly sensitive phototransistor for low optical power detection.

Recent progress in three-terminal artificial synapses based on 2D materials: from mechanisms to applications

Synapses are essential for the transmission of neural signals. Synaptic plasticity allows for changes in synaptic strength, enabling the brain to learn from experience. With the rapid development of neuromorphic electronics, tremendous efforts have been devoted to designing and fabricating electronic devices that can mimic synapse operating modes. This growing interest in the field will provide unprecedented opportunities for new hardware architectures for artificial intelligence. In this review, we focus on research of three-terminal artificial synapses based on two-dimensional (2D) materials regulated by electrical, optical and mechanical stimulation. In addition, we systematically summarize artificial synapse applications in various sensory systems, including bioplastic bionics, logical transformation, associative learning, image recognition, and multimodal pattern recognition. Finally, the current challenges and future perspectives involving integration, power consumption and functionality are outlined.

Piezoelectricity-modulated optical recombination dynamics of monolayer-MoS2/GaN-film heterostructures

Dynamic manipulation of optoelectronic responses by mechanical stimuli is promising for developing wearable electronics and human-machine interfacing. Although 2D-3D hybrid heterostructures can bring advancements in optoelectronics, their dynamic optical responses to external strains remain rarely studied. Here, we demonstrate the strain-tuned recombination dynamics of monolayer-MoS₂ and thin-film-GaN heterostructures. We find that optical excitons in the heterostructures, apart from trions, can be markedly modulated by strains. We argue that MoS₂ piezoelectric dipoles across the interfaces lead to curved band diagrams, in which optical excitons dissociate into spatially separated quasi-particles and concurrently relocate to the maxima of valence bands and the minima of conduction bands. With the increase in tensile strains, the photoluminescence (PL) intensity of the heterostructures shows quenched responses. Noticeably, the change in PL spectra strongly depends on the directions of the applied strains because of the lateral piezoelectric periodicity of MoS₂ flakes. This work not only helps in understanding the underlying physics of the decreased PL intensities upon applying strains but also demonstrates a feasible way (i.e., strains) to manipulate the PL efficiency of 2D-material-based optoelectronics.

Triboelectric Potential Powered High-Performance Organic Transistor Array

Triboelectric potential gated transistors have inspired various applications toward mechanical behavior controlled logic circuits, multifunctional sensors, artificial sensory neurons, etc. Their rapid development urgently calls for high-performance devices and corresponding figure of merits to standardize the tribotronic gating properties. Organic semiconductors paired with solution processability promise low-cost manufacture of high-performance tribotronic transistor devices/arrays. Here, we demonstrate a record high-performance tribotronic transistor array composed of an integrated triboelectric nanogenerator (TENG) and a large-area device array of C8-BTBT-PS transistors. The working mechanism of effective triboelectric potential gating is elaborately explained from the aspect of conjugated energy bands of the contact-electrification mediums and organic semiconductors. Driven by the triboelectric potential, the tribotronic transistor shows superior properties of record high current on/off ratios (>10⁸), a steep subthreshold swing (29.89 μm/dec), high stability, and excellent reproducibility. Moreover, tribotronic logic devices modulated by mechanical displacement have also been demonstrated with good stability and a high gain of 1260 V/mm. The demonstrated large-area tribotronic transistor array of organic semiconductor exhibits record high performance and offers an effective R&D platform for mechano-driven electronic terminals, interactive intelligent system, artificial robotic skin, etc.

Electronic Properties of Defective Janus MoSSe Monolayer

Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) hold great promise in electronics and optoelectronics due to their novel electronic and optical properties. In TMDCs, structural defects are inevitable and might play a decisive role in device performance. In this work, point defects, line vacancies, and 60° grain boundaries (GBs) are explored in 2D Janus MoSSe, a new member to the family of TMDCs, by means of the first-principles calculations. S and Se vacancies are found to be the most favorable point defects, and they tend to aggregate along the zigzag direction to form line vacancies. Comparing with isolated point defects, line vacancies induced in-gap states are more dispersive. In particular, 60° GBs behave as one-dimensional metallic quantum wires, as a consequence of the polar discontinuity. Thus, effectively controlling the formation of defects at nanoscale brings new electronic characteristics, providing new opportunities to broaden the applications of 2D TMDCs.

Triboelectric Nanogenerators as Active Tactile Stimulators for Multifunctional Sensing and Artificial Synapses

The wearable tactile sensors have attracted great attention in the fields of intelligent robots, healthcare monitors and human-machine interactions. To create active tactile sensors that can directly generate electrical signals in response to stimuli from the surrounding environment is of great significance. Triboelectric nanogenerators (TENGs) have the advantages of high sensitivity, fast response speed and low cost that can convert any type of mechanical motion in the surrounding environment into electrical signals, which provides an effective strategy to design the self-powered active tactile sensors. Here, an overview of the development in TENGs as tactile stimulators for multifunctional sensing and artificial synapses is systematically introduced. Firstly, the applications of TENGs as tactile stimulators in pressure, temperature, proximity sensing, and object recognition are introduced in detail. Then, the research progress of TENGs as tactile stimulators for artificial synapses is emphatically introduced, which is mainly reflected in the electrolyte-gate synaptic transistors, optoelectronic synaptic transistors, floating-gate synaptic transistors, reduced graphene oxides-based artificial synapse, and integrated circuit-based artificial synapse and nervous systems. Finally, the challenges of TENGs as tactile stimulators for multifunctional sensing and artificial synapses in practical applications are summarized, and the future development prospects are expected.

Two-dimensional graphitic carbon nitride nanosheets: a novel platform for flexible, robust and optically active triboelectric nanogenerators

We report on the characteristics of mechanically flexible, stable and photoactive triboelectric nanogenerators based on two-dimensional graphitic carbon nitride (g-C₃N₄) nanosheets. The performance of nanogenerator devices has been studied with varying frictional surfaces (such as polypropylene, aluminium oxide, Teflon and polyethylene terephthalate). Energy band diagrams have been used to explain the mechanism of triboelectric charge transfer in pristine and doped g-C₃N₄, with the former showing better characteristics. An optimized device has been found to be responsive to external stimuli to generate an output voltage of 10 V upon simple biomechanical impulses. To demonstrate the efficacy for practical applications of g-C₃N₄-based triboelectric nanogenerators, output voltages have been recorded for different common activities like walking, water showering, using as a writing/drawing pad, etc. Repetitive finger tapping on a device could charge a capacitor to as high as 55 V within ∼50 s, while that under UV illumination is found to be much faster (∼14 s) due to photoinduced carrier generations in g-C₃N₄. The exhibition of a superior photoresponsivity of ∼117 V W^-1 under UV illumination demonstrates the dual functionality of g-C₃N₄-based triboelectric devices as a nanogenerator as well as an active flexible photosensor, which is hitherto unreported. Excellent mechanical flexibility, stability and photoinduced enhancement of output characteristics make g-C₃N₄ an attractive candidate for nanogenerator devices for future applications.

A review of molybdenum disulfide (MoS2) based photodetectors: from ultra-broadband, self-powered to flexible devices

Two-dimensional transition metal dichalcogenides (2D TMDs) have attracted much attention in the field of optoelectronics due to their tunable bandgaps, strong interaction with light and tremendous capability for developing diverse van der Waals heterostructures (vdWHs) with other materials. Molybdenum disulfide (MoS2) atomic layers which exhibit high carrier mobility and optical transparency are very suitable for developing ultra-broadband photodetectors to be used from surveillance and healthcare to optical communication. This review provides a brief introduction to TMD-based photodetectors, exclusively focused on MoS2-based photodetectors. The current research advances show that the photoresponse of atomic layered MoS2 can be significantly improved by boosting its charge carrier mobility and incident light absorption via forming MoS2 based plasmonic nanostructures, halide perovskites-MoS2 heterostructures, 2D-0D MoS2/quantum dots (QDs) and 2D-2D MoS2 hybrid vdWHs, chemical doping, and surface functionalization of MoS2 atomic layers. By utilizing these different integration strategies, MoS2 hybrid heterostructure-based photodetectors exhibited remarkably high photoresponsivity raging from mA W-1 up to 1010 A W-1, detectivity from 107 to 1015 Jones and a photoresponse time from seconds (s) to nanoseconds (10-9 s), varying by several orders of magnitude from deep-ultraviolet (DUV) to the long-wavelength infrared (LWIR) region. The flexible photodetectors developed from MoS2-based hybrid heterostructures with graphene, carbon nanotubes (CNTs), TMDs, and ZnO are also discussed. In addition, strain-induced and self-powered MoS2 based photodetectors have also been summarized. The factors affecting the figure of merit of a very wide range of MoS2-based photodetectors have been analyzed in terms of their photoresponsivity, detectivity, response speed, and quantum efficiency along with their measurement wavelengths and incident laser power densities. Conclusions and the future direction are also outlined on the development of MoS2 and other 2D TMD-based photodetectors.

The recent progress of triboelectric nanogenerator-assisted photodetectors

Since 2012, triboelectric nanogenerator (TENG) has attracted significant interest from researchers in the field of energy conversion due to its unique output characteristics of high voltage, pulse and low current. In addition, recent advancements have demonstrated that photodetection platforms based on TENG exhibit great advantages such as being simple, low-cost, portable, with high sensitivity, high response, etc, and are environment friendly. Here, this article provides a comprehensive review on the state-of-the-art photodetectors based on TENG in recent years, and a detailed introduction to the structural design and potential mechanisms. It mainly focuses on self-powered photodetectors (including photodetectors as a load resistance of a TENG and photosensitive materials such as tribo-layer of TENG) and the modulation of photodetectors based on TENG (including utilizing the voltage of TENG as well as triboelectric microplasma). Finally, we put forward some perspectives and outlook, including structure engineering and mechanism guidance, for the future development of simple, high-performance and portable photodetectors based on TENG.

Ion Gel Capacitively Coupled Tribotronic Gating for Multiparameter Distance Sensing

Developing sophisticated device architectures is of great significance to go beyond Moore's law with versatility toward human-machine interaction and artificial intelligence. Tribotronics/tribo-iontronics offer a direct way to controlling the transport properties of semiconductor devices by mechanical actions, which fundamentally relies on how to enhance the tribotronic gating effect through device engineering. Here, we propose a universal method to enhance the tribotronic properties through electric double layer (EDL) capacitive coupling. By preparing an ion gel layer on top of tribotronic graphene transistor, we demonstrate a dual-mode field effect transistor (i.e., a tribotronic transistor with capacitively coupled ion gel and an ion-gel-gated graphene transistor with a second tribotronic gate). The resulted tribotronic gating performances are greatly improved by twice for the on-state current and four times for the on/off ratio (the first mode). It can also be utilized as a multiparameter distance sensor with drain current increased by ∼600 μA and threshold voltage shifted by ∼0.8 V under a mechanical displacement of 0.25 mm (the second mode). The proposed methodology of EDL capacitive coupling offers a facile and efficient way to designing more sophisticated tribotronic devices with superior performance and multifunctional sensations.

Ultrasensitive MoS2 photodetector by serial nano-bridge multi-heterojunction

The recent reports of various photodetectors based on molybdenum disulfide (MoS₂) field effect transistors showed that it was difficult to obtain optoelectronic performances in the broad detection range [visible–infrared (IR)] applicable to various fields. Here, by forming a mono-/multi-layer nano-bridge multi-heterojunction structure (more than > 300 junctions with 25 nm intervals) through the selective layer control of multi-layer MoS₂, a photodetector with ultrasensitive optoelectronic performances in a broad spectral range (photoresponsivity of 2.67 × 10⁶ A/W at λ = 520 nm and 1.65 × 10⁴ A/W at λ = 1064 nm) superior to the previously reported MoS₂-based photodetectors could be successfully fabricated. The nano-bridge multi-heterojunction is believed to be an important device technology that can be applied to broadband light sensing, highly sensitive fluorescence imaging, ultrasensitive biomedical diagnostics, and ultrafast optoelectronic integrated circuits through the formation of a nanoscale serial multi-heterojunction, just by adding a selective layer control process.

Fabrication of photodetector devices by selective etching of 2D materials can enable broadband detection. Here, the authors design mono- and multi-layer nano-bridge multi-heterojunction photodetectors based on MoS₂ with high responsivities of 2.67 × 10⁶ A/W and 1.65 × 10⁴ A/W in the visible–infrared wavelength range and fast photoresponse.

Infrared Detectable MoS2 Phototransistor and Its Application to Artificial Multilevel Optic-Neural Synapse

Layered two-dimensional (2D) materials have entered the spotlight as promising channel materials for future optoelectronic devices owing to their excellent electrical and optoelectronic properties. However, their limited photodetection range caused by their wide bandgap remains a principal challenge in 2D layered materials-based phototransistors. Here, we developed a germanium (Ge)-gated MoS₂ phototransistor that can detect light in the region from visible to infrared (λ = 520-1550 nm) using a detection mechanism based on band bending modulation. In addition, the Ge-gated MoS₂ phototransistor is proposed as a multilevel optic-neural synaptic device, which performs both optical-sensing and synaptic functions on one device and is operated in different current ranges according to the light conditions: dark, visible, and infrared. This study is expected to contribute to the development of 2D material-based phototransistors and synaptic devices in next-generation optoelectronics.

Triboelectric micromotors actuated by ultralow frequency mechanical stimuli

A high-speed micromotor is usually actuated by a power source with high voltage and frequency. Here we report a triboelectric micromotor by coupling a micromotor and a triboelectric nanogenerator, in which the micromotor can be actuated by ultralow-frequency mechanical stimuli. The performances of the triboelectric micromotor are exhibited at various structural parameters of the micromotor, as well as at different mechanical stimuli of the triboelectric nanogenerator. With a sliding range of 50 mm at 0.1 Hz, the micromotor can start to rotate and reach over 1000 r min⁻¹ at 0.8 Hz. The maximum operation efficiency of the triboelectric micromotor can reach 41%. Additionally, the micromotor is demonstrated in two scanning systems for information recognition. This work has realized a high-speed micromotor actuated by ultralow frequency mechanical stimuli without an external power supply, which has extended the application of triboelectric nanogenerator in micro/nano electromechanical systems, intelligent robots and autonomous driving.

High-speed electrostatic micromotors with low energy consumption are attractive for small-scale electromechanical systems, but applications are limited by power supplies. Here the authors use a triboelectric nanogenerator for actuation of a high-speed micromotor by low-frequency mechanical stimuli.

Triboiontronic Transistor of MoS2

Electric double layers (EDLs) formed in electrolyte-gated field-effect transistors (FETs) induce an extremely large local electric field that gives a highly efficient charge carrier control in the semiconductor channel. To achieve highly efficient triboelectric potential gating on the FET and explore diversified applications of electric double layer FETs (EDL-FETs), a triboiontronic transistor is proposed to bridge triboelectric potential modulation and ion-controlled semiconductor devices. Utilizing the triboelectric potential instead of applying an external gate voltage, the triboiontronic MoS₂ transistor is efficiently operated owing to the formation of EDLs in the ion-gel dielectric layer. The operation mechanism of the triboiontronic transistor is proposed, and high current on/off ratio over 10⁷ , low threshold value (75 μm), and steep switching properties (20 µm dec^-1 ) are achieved. A triboiontronic logic inverter with desirable gain (8.3 V mm^-1 ), low power consumption, and high stability is also demonstrated. This work presents a low-power-consuming, active, and a general approach to efficiently modulate semiconductor devices through mechanical instructions, which has great potential in human-machine interaction, electronic skin, and intelligent wearable devices. The proposed triboiontronics utilize ion migration and arrangement triggered by mechanical stimuli to control electronic properties, which are ready to deliver new interdisciplinary research directions.

Recent progress in piezotronics and tribotronics

As the electronic technology is approaching its limits of materials and processing, a smart interaction between functional device and environment is a promising way for future electronic technology above the Moore's law. The mechanical signal triggering is the most common and natural way for the smart interactions, which has realized direct interaction between human/ambient and electronics and artificial intelligence. In 2006, the piezotronic effect, as a novel effect, was first proposed by Wang to achieve the effective, adaptive and seamless interactions between electronic devices and the external stress, which utilizes the piezoelectric polarization potential as the virtual gate to tune/control the carriers' transportation in the electronic device. Since then, this new effect has been widely observed in many low-dimensional semiconductors such as ZnO, GaN, CdS nanowires, and 2D MoS₂. In extension, tribotronics was first proposed in 2014 by Wang, which is about the devices manufactured using the electrostatic potential created by triboelectrification as a 'gate' voltage to tune/control energy transformation and electrical transport in semiconductors for the smart interaction between device and environment. Tribotronics has made rapid research progress and many tribotronic functional devices have been studied with a variety of materials, such as tribotronic tactile switch, memory, hydrogen sensor and phototransistor. This review highlights advances in piezotronics and tribotronics with focus on fundamental theories, nanoscale materials, functional devices and simulations. Our emphasis is mainly about their application for third-generation semiconductor. The concepts and results presented in this review show that the piezotronics and tribotronics will facilitate the development of MEMS/NEMS, self-powered sensing, man-computer interfacing, and active wearable electronics.

Tribotronic bipolar junction transistor for mechanical frequency monitoring and use as touch switch

Tribotronics, a new field that involves the coupling of triboelectricity and semiconductors, has attracted great interest in the nanoenergy and nanoelectronics domains. This paper proposes a tribotronic bipolar junction transistor (TBJT) that incorporates a bipolar junction transistor and a triboelectric nanogenerator (TENG) in the single-electrode mode. When the mobile triboelectric layer slides on the device surface for electrification, a bias voltage is created and applied to the emitter junction, and then the base current from the TENG is amplified. Based on the fabricated TBJT, a mechanical frequency monitoring sensor with high sensitivity and excellent stability and a finger-triggered touch switch were developed. This work demonstrated for the first time a tribotronic device with simultaneously controlled voltage and current voltage/current simultaneously controlled tribotronic device, which has promising potential applications in micro/nano-sensors, human-machine interactions, intelligent instrumentation, wearable electronics, and other applications.

Hydrogen atom induced magnetic behaviors in two-dimensional materials: insight on origination in the model of α-MoO3

Atomic layered two-dimensional (2D) materials have become fascinating research topics due to their intriguing performances, but the limitation of nonmagnetic properties hinders their further applications. Developing versatile strategies endowing 2D materials with ferromagnetism is one of the main trends in current research studies. Herein, a hydrogen plasma strategy is introduced to dope hydrogen (H) atoms into the prototypical layered α-MoO₃ nanosheets, by which ferromagnetic and exchange bias (EB) effects can be induced by H atom doping into α-MoO₃ to form H_xMoO₃. These effects were interpreted by density functional theory (DFT) calculations. We find that H atom doping can introduce unoccupied states and induce a net magnetic moment localized on the d orbital of the Mo atom, because of the generated asymmetric distribution of electronic states on the Mo atom near the Fermi level. Moreover, the saturation magnetization and the EB field (H_e) of hydrogenated α-MoO₃ are found to be tunable through altering the amount of H dopant. This work provides new perspectives for the effective manipulation of ferromagnetism and exchange interaction through H doping. We hope that the presented hydrogenation strategy is applicable for other kinds of 2D materials.

Characterization of Frictional Properties of Single-Layer Molybdenum-Disulfide Film Based on a Coupling of Tip Radius and Tip⁻Sample Distance by Molecular-Dynamics Simulations

Lateral-force microscopy is a powerful tool to study the frictional properties of two-dimensional materials. However, few works distinctly reveal the correlation between the tip radius with the tip⁻sample distance and the frictional properties of the two-dimensional (2D) materials. We performed molecular-dynamics simulations to study the atomic-scale friction of a typical two-dimensional single-layer molybdenum disulfide (SLMoS₂). The effects of tip radius and tip⁻sample distance on the frictional properties were analyzed and discussed. The frictional force⁻sliding-distance curves show typical stick⁻slip behaviors, and the periodicity can be used to characterize the lattice constants of SLMoS₂. Sub-nanoscale stick-slip movements occur in one-lattice sliding periods along with only the armchair (AC) direction and only when the tip radius is smaller than 3 Å with 1.47 Å tip-sample distance. At the same tip⁻sample distance, a smaller tip can provide a more detailed characterization and higher-precision frictional properties of SLMoS₂. A larger tip is capable of providing comparative frictional properties of SLMoS₂ at a proper vertical tip⁻sample distance, compared with the small tip.

Phase Transition of Single-Layer Molybdenum Disulfide Nanosheets under Mechanical Loading Based on Molecular Dynamics Simulations

The single-layer molybdenum disulfide (SLMoS2) nanosheets have been experimentally discovered to exist in two different polymorphs, which exhibit different electrical properties, metallic or semiconducting. Herein, molecular dynamics (MD) simulations of nanoindentation and uniaxial compression were conducted to investigate the phase transition of SLMoS2 nanosheets. Typical load-deflection curves, stress-strain curves, and local atomic structures were obtained. The loading force decreases sharply and then increases again at a critical deflection under the nanoindentation, which is inferred to the phase transition. In addition to the layer thickness, some related bond lengths and bond angles were also found to suddenly change as the phase transition occurs. A bell-like hollow, so-called residual deformation, was found to form, mainly due to the lattice distortion around the waist of the bell. The effect of indenter size on the residual hollow was also analyzed. Under the uniaxial compression along the armchair direction, a different phase transition, a uniformly quadrilateral structure, was observed when the strain is greater than 27.7%. The quadrilateral structure was found to be stable and exhibit metallic conductivity in view of the first-principle calculation.

Tunable Tribotronic Dual-Gate Logic Devices Based on 2D MoS2 and Black Phosphorus

With the Moore's law hitting the bottleneck of scaling-down in size (below 10 nm), personalized and multifunctional electronics with an integration of 2D materials and self-powering technology emerge as a new direction of scientific research. Here, a tunable tribotronic dual-gate logic device based on a MoS₂ field-effect transistor (FET), a black phosphorus FET and a sliding mode triboelectric nanogenerator (TENG) is reported. The triboelectric potential produced from the TENG can efficiently drive the transistors and logic devices without applying gate voltages. High performance tribotronic transistors are achieved with on/off ratio exceeding 106 and cutoff current below 1 pA μm^-1 . Tunable electrical behaviors of the logic device are also realized, including tunable gains (improved to ≈13.8) and power consumptions (≈1 nW). This work offers an active, low-power-consuming, and universal approach to modulate semiconductor devices and logic circuits based on 2D materials with TENG, which can be used in microelectromechanical systems, human-machine interfacing, data processing and transmission.

Flexible Organic Tribotronic Transistor for Pressure and Magnetic Sensing

Flexible electronics has attracted enormous interest in wearable electronics and human-machine interfacing. Here, a flexible organic tribotronic transistor (FOTT) without a top gate electrode has been demonstrated. The FOTT is fabricated on a flexible polyethylene terephthalate film using the p-type pentacene and poly(methyl methacrylate)/Cytop composites as the conductive channel and dielectric layer, respectively. The charge carriers can be modulated by the contact electrification between the dielectric layer and a mobile triboelectric layer. Based on the fabricated FOTT, pressure and magnetic sensors have been developed, respectively, that exhibit great sensitivity, fast response time, and excellent stability. The FOTT in this simple structure shows bright potentials of tribotronics in human-machine interaction, electronic skins, wearable electronics, intelligent sensing, and so on.

Enhanced Triboelectric Nanogenerators Based on MoS2 Monolayer Nanocomposites Acting as Electron-Acceptor Layers

As one of their major goals, researchers attempting to harvest mechanical energy efficiently have continuously sought ways to integrate mature technologies with cutting-edge designs to enhance the performances of triboelectric nanogenerators (TENGs). In this research, we introduced monolayer molybdenum-disulfide (MoS₂) into the friction layer of a TENG as the triboelectric electron-acceptor layer in an attempt to dramatically enhance its output performance. As a proof of the concept, we fabricated a vertical contact-separation mode TENG containing monolayer MoS₂ as an electron-acceptor layer and found that the TENG exhibited a peak power density as large as 25.7 W/m², which is 120 times larger than that of the device without monolayer MoS₂. The mechanisms behind the performance enhancement, which are related to the highly efficient capture of triboelectric electrons in monolayer MoS₂, are discussed in detail. This study indicates that monolayer MoS₂ can be used as a functional material for efficient energy harvesting.

Tribotronic Tuning Diode for Active Analog Signal Modulation

Realizing active interaction with external environment/stimuli is a great challenge for current electronics. In this paper, a tribotronic tuning diode (TTD) is proposed by coupling a variable capacitance diode and a triboelectric nanogenerator in free-standing sliding mode. When the friction layer is sliding on the device surface for electrification, a reverse bias voltage is created and applied to the diode for tuning the junction capacitance. When the sliding distance increases from 0 to 25 mm, the capacitance of the TTD decreases from about 39 to 8 pF. The proposed TTD has been integrated into analog circuits and exhibited excellent performances in frequency modulation, phase shift, and filtering by sliding a finger. This work has demonstrated tunable diode and active analog signal modulation by tribotronics, which has great potential to replace ordinary variable capacitance diodes in various practical applications such as signal processing, electronic tuning circuits, precise tuning circuits, active sensor networks, electronic communications, remote controls, flexible electronics, etc.

Graphene Tribotronics for Electronic Skin and Touch Screen Applications

Graphene tribotronics is introduced for touch-sensing applications such as electronic skins and touch screens. The devices are based on a coplanar coupling of triboelectrification and current transport in graphene transistors. The touch sensors are ultrasensitive, fast, and stable. Furthermore, they are transparent and flexible, and can spatially map touch stimuli such as movement of a ball, multi-touch, etc.

Tribotronic Transistor Array as an Active Tactile Sensing System

Large-scale tactile sensor arrays are of great importance in flexible electronics, human-robot interaction, and medical monitoring. In this paper, a flexible 10 × 10 tribotronic transistor array (TTA) is developed as an active tactile sensing system by incorporating field-effect transistor units and triboelectric nanogenerators into a polyimide substrate. The drain-source current of each tribotronic transistor can be individually modulated by the corresponding external contact, which has induced a local electrostatic potential to act as the conventional gate voltage. By scaling down the pixel size from 5 × 5 to 0.5 × 0.5 mm², the sensitivities of single pixels are systematically investigated. The pixels of the TTA show excellent durability, independence, and synchronicity, which are suitable for applications in real-time tactile sensing, motion monitoring, and spatial mapping. The integrated tribotronics provides an unconventional route to realize an active tactile sensing system, with prospective applications in wearable electronics, human-machine interfaces, fingerprint identification, and so on.

Transparent and Flexible Self-Charging Power Film and Its Application in a Sliding Unlock System in Touchpad Technology

Portable and wearable personal electronics and smart security systems are accelerating the development of transparent, flexible, and thin-film electronic devices. Here, we report a transparent and flexible self-charging power film (SCPF) that functions either as a power generator integrated with an energy storage unit or as a self-powered information input matrix. The SCPF possesses the capability of harvesting mechanical energy from finger motions, based on the coupling between the contact electrification and electrostatic induction effects, and meanwhile storing the generated energy. Under the fast finger sliding, the film can be charged from 0 to 2.5 V within 2094 s and discharge at 1 μA for approximately 1630 s. Furthermore, the film is able to identify personal characteristics during a sliding motion by recording the electric signals related to the person's individual bioelectricity, applied pressing force, sliding speed, and so on, which shows its potential applications in security systems in touchpad technology.