A Novel Domain-Confined Growth Strategy for In Situ Controllable Fabrication of Individual Hollow Nanostructures

In Situ Sintering of CdSe/CdS Nanocrystals under Electron Beam Irradiation

Colloidal semiconductor nanocrystals have attracted widespread attention due to their tremendous electrical and optical properties. Nanoparticles exhibit a strong tendency to aggregate and sinter in a short period of time during processing or use due to their large surface area-to-volume ratio, which may lead to significant changes in their required performance. Therefore, it is of great significance to conduct in-depth research on the sintering process and mechanism of nanoparticles to maintain their stability. Here, the sintering process of CdSe/CdS core/shell nanocrystals under continuous electron beam irradiation was studied using in situ transmission electron microscopy (TEM). In the early stages of sintering, CdSe/CdS nanocrystals approached each other at a distance of approximately 1-2 nm. As the exposure time to the electron beam increased, the movement of surface atoms on the nanocrystals led to contact between them. Subsequently, the atoms on the contact surfaces underwent rapid motion, resulting in the rapid formation of the neck between the particles. The neck formation between adjacent particles provides strong evidence of a sintering mechanism dominated by surface atom diffusion rather than Ostwald ripening. Further research in this area could lead to the development of improved methods to prevent sintering and enhance the stability of nanocrystals, ultimately contributing to the advancement of nanomaterial-based devices and materials with long-lasting performance.

In situ TEM observation of liquid-state Sn nanoparticles vanishing in a SiO2 structure: a potential synthetic tool for controllable morphology evolution from core-shell to yolk-shell and hollow structures

Precise design of hollow nanostructures can be realized via various approaches developed in the last two decades, endowing nanomaterials with unique structures and outstanding performances, showing their usefulness in a broad range of fields. Herein, we demonstrate the formation of SnO₂@SiO₂ hollow nanostructures, for the first time, by interaction between liquid state Sn cores and SiO₂ shell structures inside Sn@SiO₂ core-shell nanoparticles with real-time observation via in situ transmission electron microscopy (TEM). Based on the in situ results, designed transformation of the nanoparticle structure from core-shell Sn@SiO₂ to yolk-shell Sn@SiO₂ and hollow SnO₂@SiO₂ is demonstrated, showing the controllable structure of core-shell Sn@SiO₂ nanoparticles via fixing liquid-state Sn inside a SiO₂ shell which has a certain Sn containing capacity. The present approach expands the toolbox for the design and preparation of yolk-shell and hollow nanostructures, thus providing us with a new strategy for fabrication of more complicated nanostructures.

Novel Interface in CuAg Nanostructure Induced by Size Effect

Bimetallic Janus nanostructures (JNs) have been revealed to be valuable materials because they have unique intermetallic interfaces that enable their potential use in a range of applications. However, with the increasing miniaturization of electronic devices, particle sizes influence the structure and orientation of these heterointerfaces, which plays a significant role in their application. Our in situ annealing experiments with high-resolution transmission electron microscopy have shown that for particle sizes in the sub-10 nm range, CuAg JNs preferentially show a Cu(100)/Ag(100) interface, differing from the larger CuAg JNs, where the Cu(111)/Ag(111) interface is favored. We discuss a feasible atomic motion mechanism to explain the effect of particle size on the formation of different heterointerfaces. Our results reveal the presence of a novel sub-10 nm heterostructure with a unique Cu(100)/Ag(100) interface and also provide crucial insights into understanding the role of particle size in interfacial evolution during thermal annealing of heterostructures.