1
|
Yao ZF, Wu HT, Zhuang FD, Zhang PF, Li QY, Wang JY, Pei J. Achieving Ideal and Environmentally Stable n-Type Charge Transport in Polymer Field-Effect Transistors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2306010. [PMID: 37884476 DOI: 10.1002/smll.202306010] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/06/2023] [Revised: 10/15/2023] [Indexed: 10/28/2023]
Abstract
Realizing ideal charge transport in field-effect transistors (FETs) of conjugated polymers is crucial for evaluating device performance, such as carrier mobility and practical applications of conjugated polymers. However, the current FETs using conjugated polymers as the active layers generally show certain non-ideal transport characteristics and poor stability. Here, ideal charge transport of n-type polymer FETs is achieved on flexible polyimide substrates by using an organic-inorganic hybrid double-layer dielectric. Deposited conjugated polymer films show highly ordered structures and low disorder, which are supported by grazing-incidence wide-angle X-ray scattering, near-edge X-ray absorption fine structure, and molecular dynamics simulations. Furthermore, the organic-inorganic hybrid double-layer dielectric provides low interfacial defects, leading to excellent charge transport in FETs with high electron mobility (1.49 ± 0.46 cm2 V-1 s-1) and ideal reliability factors (102 ± 7%). Fabricated polymer FETs show a self-encapsulation effect, resulting in high stability of the FET charge transport. The polymer FETs still work with high mobility above 1 cm2 V-1 s-1 after storage in air for more than 300 days. Compared with state-of-the-art conjugated polymer FETs, this work simultaneously achieves ideal charge transport and environmental stability in n-type polymer FETs, facilitating rapid device optimization of high-performance polymer electronics.
Collapse
Affiliation(s)
- Ze-Fan Yao
- Beijing National Laboratory for Molecular Sciences (BNLMS), Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, Center of Soft Matter Science and Engineering, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Hao-Tian Wu
- Beijing National Laboratory for Molecular Sciences (BNLMS), Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, Center of Soft Matter Science and Engineering, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Fang-Dong Zhuang
- Ningbo Boya Poly Advanced Materials Co. Ltd., Ningbo, 315042, China
| | - Peng-Fei Zhang
- Ningbo Boya Poly Advanced Materials Co. Ltd., Ningbo, 315042, China
| | - Qi-Yi Li
- Beijing National Laboratory for Molecular Sciences (BNLMS), Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, Center of Soft Matter Science and Engineering, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Jie-Yu Wang
- Beijing National Laboratory for Molecular Sciences (BNLMS), Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, Center of Soft Matter Science and Engineering, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Jian Pei
- Beijing National Laboratory for Molecular Sciences (BNLMS), Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, Center of Soft Matter Science and Engineering, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| |
Collapse
|
2
|
Park T, Kim M, Lee EK, Hur J, Yoo H. Overcoming Downscaling Limitations in Organic Semiconductors: Strategies and Progress. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2306468. [PMID: 37857588 DOI: 10.1002/smll.202306468] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/29/2023] [Revised: 09/30/2023] [Indexed: 10/21/2023]
Abstract
Organic semiconductors have great potential to revolutionize electronics by enabling flexible and eco-friendly manufacturing of electronic devices on plastic film substrates. Recent research and development led to the creation of printed displays, radio-frequency identification tags, smart labels, and sensors based on organic electronics. Over the last 3 decades, significant progress has been made in realizing electronic devices with unprecedented features, such as wearable sensors, disposable electronics, and foldable displays, through the exploitation of desirable characteristics in organic electronics. Neverthless, the down-scalability of organic electronic devices remains a crucial consideration. To address this, efforts are extensively explored. It is of utmost importance to further develop these alternative patterning methods to overcome the downscaling challenge. This review comprehensively discusses the efforts and strategies aimed at overcoming the limitations of downscaling in organic semiconductors, with a particular focus on four main areas: 1) lithography-compatible organic semiconductors, 2) fine patterning of printing methods, 3) organic material deposition on pre-fabricated devices, and 4) vertical-channeled organic electronics. By discussing these areas, the full potential of organic semiconductors can be unlocked, and the field of flexible and sustainable electronics can be advanced.
Collapse
Affiliation(s)
- Taehyun Park
- Department of Chemical and Biological Engineering, Gachon University, Seongnam-si, Gyeonggi-do, 13120, Republic of Korea
| | - Minseo Kim
- Department of Electronic Engineering, Gachon University, Seongnam-si, Gyeonggi-do, 13120, Republic of Korea
| | - Eun Kwang Lee
- Department of Chemical Engineering, Pukyong National University, Busan, 48513, Republic of Korea
| | - Jaehyun Hur
- Department of Chemical and Biological Engineering, Gachon University, Seongnam-si, Gyeonggi-do, 13120, Republic of Korea
| | - Hocheon Yoo
- Department of Electronic Engineering, Gachon University, Seongnam-si, Gyeonggi-do, 13120, Republic of Korea
| |
Collapse
|
3
|
Dong MM, He H, Wang CK, Fu XX. Two-dimensional MoSi 2As 4-based field-effect transistors integrating switching and gas-sensing functions. NANOSCALE 2023; 15:9106-9115. [PMID: 37133349 DOI: 10.1039/d3nr00637a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/04/2023]
Abstract
Multifunctional nanoscale devices integrating multiple functions are of great importance for meeting the requirements of next-generation electronics. Herein, using first-principles calculations, we propose multifunctional devices based on the two-dimensional monolayer MoSi2As4, where a single-gate field-effect transistor (FET) and FET-type gas sensor are integrated. After introducing the optimizing strategies, such as underlap structures and dielectrics with a high dielectric constant (κ), we designed a 5 nm gate-length MoSi2As4 FET, whose performance fulfilled the key criteria of the International Technology Roadmap for Semiconductors (ITRS) for high-performance semiconductors. Under the joint adjustment of the underlap structure and high-κ dielectric material, the on/off ratio of the 5 nm gate-length FET reached up to 1.38 × 104. In addition, driven by the high-performance FET, the MoSi2As4-based FET-type gas sensor showed a sensitivity of 38% for NH3 and 46% for NO2. Moreover, the weak interaction between NH3 (NO2) and MoSi2As4 favored the recycling of the sensor. Furthermore, the sensitivity of the sensor could be effectively improved by the gate voltage, and was increased up to 67% (74%) for NH3 (NO2). Our work provides theoretical guidance for the fabrication of multifunctional devices combining a high-performance FET and sensitive gas sensor.
Collapse
Affiliation(s)
- Mi-Mi Dong
- Shandong Key Laboratory of Medical Physics and Image Processing & Shandong Provincial Engineering and Technical Center of Light Manipulations, School of Physics and Electronics, Shandong Normal University, Jinan 250358, China.
| | - Hang He
- Shandong Key Laboratory of Medical Physics and Image Processing & Shandong Provincial Engineering and Technical Center of Light Manipulations, School of Physics and Electronics, Shandong Normal University, Jinan 250358, China.
| | - Chuan-Kui Wang
- Shandong Key Laboratory of Medical Physics and Image Processing & Shandong Provincial Engineering and Technical Center of Light Manipulations, School of Physics and Electronics, Shandong Normal University, Jinan 250358, China.
| | - Xiao-Xiao Fu
- Shandong Key Laboratory of Medical Physics and Image Processing & Shandong Provincial Engineering and Technical Center of Light Manipulations, School of Physics and Electronics, Shandong Normal University, Jinan 250358, China.
| |
Collapse
|
4
|
Ghamari P, Niazi MR, Perepichka DF. Improving Environmental and Operational Stability of Polymer Field-Effect Transistors by Doping with Tetranitrofluorenone. ACS APPLIED MATERIALS & INTERFACES 2023; 15:19290-19299. [PMID: 36944187 DOI: 10.1021/acsami.3c01034] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Operational instability of organic field-effect transistors (OFETs) is one of the key limitations for applications of printed electronics. Environmental species, especially oxygen and water, unintentionally introduced in the OFET channel, can act as either dopants or traps for charge carriers, affecting the electrical characteristics and stability of devices. Here, we report that intentional doping of the benchmark p-type semiconducting polymer (DPP-DTT) with 2,4,5,7-tetranitrofluorenone (TeNF) markedly improves the operational and environmental stability of OFETs. Electrical interrogation of DPP-DTT OFETs in various environments and at variable temperatures shows suppression of electron-induced traps and increase of hole mobility in oxygen-rich environment, while the water molecules act as traps for positive charge carrier, reducing the hole mobility and significantly shifting the threshold voltage. Doping of DPP-DTT with TeNF suppresses both effects, resulting in environmentally independent performance and superior long-term stability of unencapsulated devices for up to 4 months in ambient air. Furthermore, the doped OFETs exhibit dramatically reduced hysteresis and bias-stressed current drop. Such improvement of the environmental and operational stabilities is ascribed to the mitigation of traps induced by the injected minority carrier (electrons) and the reduction of the majority carrier (hole) traps in doped polymer films due to enhanced microstructural order.
Collapse
Affiliation(s)
- Pegah Ghamari
- Department of Chemistry, McGill University, 801 Sherbrooke Street West, Montreal, Quebec H3A 0B8, Canada
- Department of Electrical Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada
| | - Muhammad Rizwan Niazi
- Department of Chemistry, McGill University, 801 Sherbrooke Street West, Montreal, Quebec H3A 0B8, Canada
| | - Dmytro F Perepichka
- Department of Chemistry, McGill University, 801 Sherbrooke Street West, Montreal, Quebec H3A 0B8, Canada
| |
Collapse
|
5
|
Wiesner T, Wu Z, Han J, Ji L, Friedrich A, Krummenacher I, Moos M, Lambert C, Braunschweig H, Rudin B, Reiss H, Tverskoy O, Rominger F, Dreuw A, Marder TB, Freudenberg J, Bunz UHF. The Radical Anion, Dianion and Electron Transport Properties of Tetraiodotetraazapentacene. Chemistry 2022; 28:e202201919. [PMID: 35916326 PMCID: PMC10092590 DOI: 10.1002/chem.202201919] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/21/2022] [Indexed: 12/14/2022]
Abstract
Tetraiodotetraazapentacene I4 TAP, the last missing derivative in the series of halogenated silylated tetraazapentacenes, was synthesized via condensation chemistry from a TIPS-ethynylated diaminobenzothiadiazol in three steps. Single and double reduction furnished its air-stable monoanion and relatively air-stable dianion, both of which were characterized by crystallography. All three species are structurally and spectroscopically compared to non-halogenated TAP and Br4 TAP. I4 TAP is an n-channel material in thin-film transistors with average electron mobilities exceeding 1 cm2 (Vs)-1 .
Collapse
Affiliation(s)
- Thomas Wiesner
- Organisch-Chemisches Institut, Ruprecht-Karls-Universität Heidelberg, Im Neuenheimer Feld 270, 69120, Heidelberg, Germany
| | - Zhu Wu
- Institut für Anorganische Chemie and, Institute for Sustainable Chemistry & Catalysis with Boron, Julius-Maximilians-Universität Würzburg, Am Hubland, 97074, Würzburg, Germany
| | - Jie Han
- Interdisziplinares Zentrum für Wissenschaftliches Rechnen, Physikalisch-Chemisches Institut, Ruprecht-Karls-Universität Heidelberg, Im Neuenheimer Feld 205, 69120, Heidelberg, Germany.,Present Adress: State Key Laboratory of Coordination Chemistry, Jiangsu Key Laboratory of Advanced Organic Materials, Chemistry and Biomedicine Innovation Center (ChemBIC), School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, 210023, P. R. China
| | - Lei Ji
- Institut für Anorganische Chemie and, Institute for Sustainable Chemistry & Catalysis with Boron, Julius-Maximilians-Universität Würzburg, Am Hubland, 97074, Würzburg, Germany
| | - Alexandra Friedrich
- Institut für Anorganische Chemie and, Institute for Sustainable Chemistry & Catalysis with Boron, Julius-Maximilians-Universität Würzburg, Am Hubland, 97074, Würzburg, Germany
| | - Ivo Krummenacher
- Institut für Anorganische Chemie and, Institute for Sustainable Chemistry & Catalysis with Boron, Julius-Maximilians-Universität Würzburg, Am Hubland, 97074, Würzburg, Germany
| | - Michael Moos
- Institut für Organische Chemie, Julius-Maximilians-Universität Würzburg, Am Hubland, 97074, Würzburg, Germany
| | - Christoph Lambert
- Institut für Organische Chemie, Julius-Maximilians-Universität Würzburg, Am Hubland, 97074, Würzburg, Germany
| | - Holger Braunschweig
- Institut für Anorganische Chemie and, Institute for Sustainable Chemistry & Catalysis with Boron, Julius-Maximilians-Universität Würzburg, Am Hubland, 97074, Würzburg, Germany
| | - Benjamin Rudin
- Organisch-Chemisches Institut, Ruprecht-Karls-Universität Heidelberg, Im Neuenheimer Feld 270, 69120, Heidelberg, Germany
| | - Hilmar Reiss
- Organisch-Chemisches Institut, Ruprecht-Karls-Universität Heidelberg, Im Neuenheimer Feld 270, 69120, Heidelberg, Germany
| | - Olena Tverskoy
- Organisch-Chemisches Institut, Ruprecht-Karls-Universität Heidelberg, Im Neuenheimer Feld 270, 69120, Heidelberg, Germany
| | - Frank Rominger
- Organisch-Chemisches Institut, Ruprecht-Karls-Universität Heidelberg, Im Neuenheimer Feld 270, 69120, Heidelberg, Germany
| | - Andreas Dreuw
- Interdisziplinares Zentrum für Wissenschaftliches Rechnen, Physikalisch-Chemisches Institut, Ruprecht-Karls-Universität Heidelberg, Im Neuenheimer Feld 205, 69120, Heidelberg, Germany
| | - Todd B Marder
- Institut für Anorganische Chemie and, Institute for Sustainable Chemistry & Catalysis with Boron, Julius-Maximilians-Universität Würzburg, Am Hubland, 97074, Würzburg, Germany
| | - Jan Freudenberg
- Organisch-Chemisches Institut, Ruprecht-Karls-Universität Heidelberg, Im Neuenheimer Feld 270, 69120, Heidelberg, Germany
| | - Uwe H F Bunz
- Organisch-Chemisches Institut, Ruprecht-Karls-Universität Heidelberg, Im Neuenheimer Feld 270, 69120, Heidelberg, Germany
| |
Collapse
|
6
|
Wu Y, Ding Z, Zhang Q, Liang X, Yang H, Huang W, Su Y, Zhang Y, Hu H, Han Y, Liu SF, Zhao K. Increasing H-Aggregates via Sequential Aggregation to Enhance the Hole Mobility of Printed Conjugated Polymer Films. Macromolecules 2022. [DOI: 10.1021/acs.macromol.2c01701] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
- Yin Wu
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Laboratory for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, Shaanxi, China
| | - Zicheng Ding
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Laboratory for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, Shaanxi, China
| | - Qiang Zhang
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China
| | - Xiao Liang
- Hoffmann Institute of Advanced Materials, Shenzhen Polytechnic, Shenzhen 518055, China
| | - Hua Yang
- Dongguan Neutron Science Center, Institute of High Energy Physics, Chinese Academy of Sciences, Dongguan 523803, China
| | - Wenliang Huang
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Laboratory for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, Shaanxi, China
| | - Yueling Su
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Laboratory for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, Shaanxi, China
| | - Yi Zhang
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Laboratory for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, Shaanxi, China
| | - Hanlin Hu
- Hoffmann Institute of Advanced Materials, Shenzhen Polytechnic, Shenzhen 518055, China
| | - Yanchun Han
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China
| | - Shengzhong Frank Liu
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Laboratory for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, Shaanxi, China
| | - Kui Zhao
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Laboratory for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, Shaanxi, China
| |
Collapse
|
7
|
Dynamic self-stabilization in the electronic and nanomechanical properties of an organic polymer semiconductor. Nat Commun 2022; 13:3076. [PMID: 35654891 PMCID: PMC9163058 DOI: 10.1038/s41467-022-30801-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/20/2022] [Accepted: 05/19/2022] [Indexed: 11/20/2022] Open
Abstract
The field of organic electronics has profited from the discovery of new conjugated semiconducting polymers that have molecular backbones which exhibit resilience to conformational fluctuations, accompanied by charge carrier mobilities that routinely cross the 1 cm2/Vs benchmark. One such polymer is indacenodithiophene-co-benzothiadiazole. Previously understood to be lacking in microstructural order, we show here direct evidence of nanosized domains of high order in its thin films. We also demonstrate that its device-based high-performance electrical and thermoelectric properties are not intrinsic but undergo rapid stabilization following a burst of ambient air exposure. The polymer’s nanomechanical properties equilibrate on longer timescales owing to an orthogonal mechanism; the gradual sweating-out of residual low molecular weight solvent molecules from its surface. We snapshot the quasistatic temporal evolution of the electrical, thermoelectric and nanomechanical properties of this prototypical organic semiconductor and investigate the subtleties which play on competing timescales. Our study documents the untold and often overlooked story of a polymer device’s dynamic evolution toward stability. Organic polymer nanomechanics has been explored through precise nanometre-scale stiffness measurements in a high-mobility semiconducting polymer. Higher eigen-mode atomic force microscopy is used to measure nanomechnical variations in the film texture, as well as the nanoscale order in the material.
Collapse
|
8
|
Wang S, Zhao X, Zhang C, Yang Y, Liang J, Ni Y, Zhang M, Li J, Ye X, Zhang J, Tong Y, Tang Q, Liu Y. Suppressing Interface Strain for Eliminating Double-Slope Behaviors: Towards Ideal Conformable Polymer Field-Effect Transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2101633. [PMID: 34480384 DOI: 10.1002/adma.202101633] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/28/2021] [Revised: 07/13/2021] [Indexed: 06/13/2023]
Abstract
High-mobility polymer field-effect transistors (PFETs) are being actively explored for applications in soft electronic skin and low-cost flexible displays because of their superior solution processability, mechanical flexibility, and stretchability. However, most of high-mobility PFETs often deviate from the idealized behavior with variable mobility, large threshold voltage, and high off-state current, which masks their intrinsic properties and significantly impedes their practical applications. Here, it is first revealed that interface strain between polymer thin film and rigid substrate plays a crucial role in determining the ideality of PFETs, and demonstrate that various ideal conformable PFETs can be successfully fabricated by releasing strain. It is found that strain in film can be released by one-step peeling strategy, which can reduce π-π stacking distance and suppress generation of oxygen doped carriers, thereby obtaining linearly injected charge carriers and decreased carrier concentration in channel, eventually realizing ideal PFETs. More impressively, the fabricated ideal conformable PFET array displays outstanding conformability to curved objects, and meanwhile showing excellent organic light-emitting display driving capability. The work clarifies the effect of the interface strain on the device ideality, and strain can be effectively released by a facile peeling strategy, thus offering useful guidance for the construction of ideal conformable PFETs.
Collapse
Affiliation(s)
- Shuya Wang
- Center for Advanced Optoelectronic Functional Materials Research and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Xiaoli Zhao
- Center for Advanced Optoelectronic Functional Materials Research and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Cong Zhang
- Center for Advanced Optoelectronic Functional Materials Research and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Yahan Yang
- Center for Advanced Optoelectronic Functional Materials Research and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Jing Liang
- Center for Advanced Optoelectronic Functional Materials Research and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Yanping Ni
- Center for Advanced Optoelectronic Functional Materials Research and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Mingxin Zhang
- Center for Advanced Optoelectronic Functional Materials Research and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Juntong Li
- Center for Advanced Optoelectronic Functional Materials Research and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Xiaolin Ye
- Center for Advanced Optoelectronic Functional Materials Research and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Jidong Zhang
- Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, China
| | - Yanhong Tong
- Center for Advanced Optoelectronic Functional Materials Research and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Qingxin Tang
- Center for Advanced Optoelectronic Functional Materials Research and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Yichun Liu
- Center for Advanced Optoelectronic Functional Materials Research and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, 130024, China
| |
Collapse
|
9
|
Ju CW, French EJ, Geva N, Kohn AW, Lin Z. Stacked Ensemble Machine Learning for Range-Separation Parameters. J Phys Chem Lett 2021; 12:9516-9524. [PMID: 34559964 DOI: 10.1021/acs.jpclett.1c02506] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Density functional theory-based high-throughput materials and drug discovery has achieved tremendous success in recent decades, but its power on organic semiconducting molecules suffered catastrophically from the self-interaction error until the nonempirical but expensive optimally tuned range-separated hybrid (OT-RSH) functionals were developed. An OT-RSH transitions from a short-range (semi)local functional to a long-range Hartree-Fock exchange at a distance characterized by a molecule-specific range-separation parameter (ω). Herein, we propose a stacked ensemble machine learning model that provides an accelerated alternative of OT-RSH based on system-dependent structural and electronic configurations. We trained ML-ωPBE, the first functional in our series, using a database of 1970 molecules with sufficient structural and functional diversity, and assessed its accuracy and efficiency using another 1956 molecules. Compared with nonempirical OT-ωPBE, ML-ωPBE reaches a mean absolute error of 0.00504a0-1 for optimal ω's, reduces the computational cost by 2.66 orders of magnitude, and achieves comparable predictive power in optical properties.
Collapse
Affiliation(s)
- Cheng-Wei Ju
- Department of Chemistry, University of Massachusetts, Amherst, Massachusetts 01003, United States
- Pritzker School of Molecular Engineering, The University of Chicago, Chicago, Illinois 60637, United States
| | - Ethan J French
- Department of Chemistry, University of Massachusetts, Amherst, Massachusetts 01003, United States
| | - Nadav Geva
- Advanced Micro Devices Inc., Boxborough, Massachusetts 01719, United States
| | - Alexander W Kohn
- Blizzard Entertainment Inc., Irvine, California 92618, United States
| | - Zhou Lin
- Department of Chemistry, University of Massachusetts, Amherst, Massachusetts 01003, United States
| |
Collapse
|
10
|
Janus K, Danielewicz K, Chlebosz D, Goldeman W, Kiersnowski A. Electron-to Hole Transport Change Induced by Solvent Vapor Annealing of Naphthalene Diimide Doped with Poly(3-Hexylthiophene). Front Chem 2021; 9:703710. [PMID: 34422763 PMCID: PMC8375403 DOI: 10.3389/fchem.2021.703710] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/30/2021] [Accepted: 07/26/2021] [Indexed: 11/13/2022] Open
Abstract
Herein we report on fabrication and properties of organic field-effect transistors (OFETs) based on the spray-coated films of N,N′-dioctyl naphthalene diimide (NDIC8) doped with 2.4 wt% of poly (3-hexylthiophene) (P3HT). OFETs with the untreated NDIC8:P3HT films revealed electron conductivity [μe* = 5 × 10–4 cm2×(Vs)−1]. After the annealing in chloroform vapor the NDIC8:P3HT films revealed the hole transport only [μh* = 0.9 × 10–4 cm2×(Vs)−1]. Due to the chemical nature and energy levels, the hole transport was not expected for NDIC8-based system. Polarized optical- and scanning electron microscopies indicated that the solvent vapor annealing of the NDIC8:P3HT films caused a transition of their fine-grained morphology to the network of branched, dendritic crystallites. Grazing incidence wide-angle X-ray scattering studies indicated that the above transition was accompanied by a change in the crystal structure of NDIC8. The isotropic crystal structure of NDIC8 in the untreated film was identical to the known crystal structure of the bulk NDIC8. After the solvent annealing the crystal structure of NDIC8 changed to a not-yet-reported polymorph, that, unlike in the untreated film, was partially oriented with respect to the OFET substrate.
Collapse
Affiliation(s)
- Krzysztof Janus
- Department of Physical and Quantum Chemistry, Faculty of Chemistry, Wroclaw University of Science and Technology, Wroclaw, Poland.,The Leibniz Institute of Polymer Research, Dresden, Germany
| | - Kinga Danielewicz
- Department of Physical and Quantum Chemistry, Faculty of Chemistry, Wroclaw University of Science and Technology, Wroclaw, Poland
| | - Dorota Chlebosz
- Department of Physical and Quantum Chemistry, Faculty of Chemistry, Wroclaw University of Science and Technology, Wroclaw, Poland.,The Leibniz Institute of Polymer Research, Dresden, Germany
| | - Waldemar Goldeman
- Department of Physical and Quantum Chemistry, Faculty of Chemistry, Wroclaw University of Science and Technology, Wroclaw, Poland
| | - Adam Kiersnowski
- Department of Physical and Quantum Chemistry, Faculty of Chemistry, Wroclaw University of Science and Technology, Wroclaw, Poland.,The Leibniz Institute of Polymer Research, Dresden, Germany
| |
Collapse
|
11
|
Ye X, Zhao X, Wang S, Wei Z, Lv G, Yang Y, Tong Y, Tang Q, Liu Y. Blurred Electrode for Low Contact Resistance in Coplanar Organic Transistors. ACS NANO 2021; 15:1155-1166. [PMID: 33337129 DOI: 10.1021/acsnano.0c08122] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Inefficient charge injection and transport across the electrode/semiconductor contact edge severely limits the device performance of coplanar organic thin-film transistors (OTFTs). To date, various approaches have been implemented to address the adverse contact problems of coplanar OTFTs. However, these approaches mainly focused on reducing the injection resistance and failed to effectively lower the access resistance. Here, we demonstrate a facile strategy by utilizing the blurring effect during the deposition of metal electrodes, to significantly reduce the access resistance. We find that the transition region formed by the blurring behavior can continuously tune the molecular packing and thin-film growth of organic semiconductors across the contact edge, as well as provide continuously distributed gap states for carrier tunnelling. Based on this versatile strategy, the fabricated dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) coplanar OTFT shows a high field-effect mobility of 6.08 cm2 V-1 s-1 and a low contact resistance of 2.32 kΩ cm, comparable to the staggered OTFTs fabricated simultaneously. Our work addresses the crucial impediments for further reducing the contact resistance in coplanar OTFTs, which represents a significant step of contact injection engineering in organic devices.
Collapse
Affiliation(s)
- Xiaolin Ye
- Center for Advanced Optoelectronic Functional Materials Research, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
| | - Xiaoli Zhao
- Center for Advanced Optoelectronic Functional Materials Research, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
| | - Shuya Wang
- Center for Advanced Optoelectronic Functional Materials Research, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
| | - Zhan Wei
- Center for Advanced Optoelectronic Functional Materials Research, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
| | - Guangshuang Lv
- Center for Advanced Optoelectronic Functional Materials Research, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
| | - Yahan Yang
- Center for Advanced Optoelectronic Functional Materials Research, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
| | - Yanhong Tong
- Center for Advanced Optoelectronic Functional Materials Research, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
| | - Qingxin Tang
- Center for Advanced Optoelectronic Functional Materials Research, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
| | - Yichun Liu
- Center for Advanced Optoelectronic Functional Materials Research, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
| |
Collapse
|
12
|
Tang X, Kwon HJ, Hong J, Ye H, Wang R, Yun DJ, Park CE, Jeong YJ, Lee HS, Kim SH. Direct Printing of Asymmetric Electrodes for Improving Charge Injection/Extraction in Organic Electronics. ACS APPLIED MATERIALS & INTERFACES 2020; 12:33999-34010. [PMID: 32633116 DOI: 10.1021/acsami.0c08683] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Engineering the energy levels of organic conducting materials can be useful for developing high-performance organic field-effect transistors (OFETs), whose electrodes must be well controlled to facilitate easy charge carrier transport from the source to drain through an active channel. However, symmetric source and drain electrodes that have the same energy levels are inevitably unfavorable for either charge injection or charge extraction. In this study, asymmetric source and drain electrodes are simply prepared using the electrohydrodynamic (EHD)-jet printing technique after the careful work function engineering of organic conducting material composites. Two types of additives effectively tune the energy levels of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate-based composites. These solutions are alternately patterned using the EHD-jet printing process, where the use of an electric field makes fine jet control that enables to directly print asymmetric electrodes. The asymmetric combination of EHD-printed electrodes helps in obtaining advanced charge transport properties in p-type and n-type OFETs, as well as their organic complementary inverters. This strategy is believed to provide useful guidelines for the facile patterning of asymmetric electrodes, enabling the desirable properties of charge injection and extraction to be achieved in organic electronic devices.
Collapse
Affiliation(s)
- Xiaowu Tang
- Department of Advanced Organic Materials Engineering, Yeungnam University, Gyeongsan 38541, Korea
| | - Hyeok-Jin Kwon
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
| | - Jisu Hong
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
| | - Heqing Ye
- Department of Advanced Organic Materials Engineering, Yeungnam University, Gyeongsan 38541, Korea
| | - Rixuan Wang
- Department of Advanced Organic Materials Engineering, Yeungnam University, Gyeongsan 38541, Korea
| | - Dong-Jin Yun
- Analytical Engineering Group, Samsung Advanced Institute of Technology, Suwon 16678, Republic of Korea
| | - Chan Eon Park
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
| | - Yong Jin Jeong
- Department of Materials Science & Engineering, Korea National University of Transportation, Chungju 27469, Republic of Korea
| | - Hwa Sung Lee
- Department of Materials Science and Chemical Engineering, Hanyang University, Ansan 15588, Republic of Korea
| | - Se Hyun Kim
- Department of Advanced Organic Materials Engineering, Yeungnam University, Gyeongsan 38541, Korea
- School of Chemical Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea
| |
Collapse
|
13
|
Li H, Brédas JL. Developing molecular-level models for organic field-effect transistors. Natl Sci Rev 2020; 8:nwaa167. [PMID: 35371512 PMCID: PMC8966973 DOI: 10.1093/nsr/nwaa167] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/23/2020] [Revised: 05/19/2020] [Accepted: 07/09/2020] [Indexed: 11/14/2022] Open
Abstract
Abstract
Organic field-effect transistors (OFETs) are not only functional devices but also represent an important tool for measuring the charge-transport properties of organic semiconductors (OSs). Thus, efforts to understand the performance and characteristics of OFET devices are not only useful in helping achieve higher device efficiencies but also critical to ensuring accuracy in the evaluations of OS charge mobilities. These studies rely on OFET device models, which connect the measured current characteristics to the properties of the OSs. Developing such OFET models requires good knowledge of the charge-transport processes in OSs. In device active layers, the OS thin films are either amorphous (e.g. in organic light-emitting diodes and organic solar cells) or crystalline (e.g. those optimized for charge transport in OFETs). When the electronic couplings between adjacent OS molecules or polymer chain segments are weak, the charge-transport mechanism is dominated by hopping processes, which is the context in which we frame the discussion in this Review. Factors such as disorder, mobility anisotropy, traps, grain boundaries or film morphology all impact charge transport. To take these features fully into account in an OFET device model requires considering a nano-scale, molecular-level resolution. Here, we discuss the recent development of such molecular-resolution OFET models based on a kinetic Monte Carlo approach relevant to the hopping regime. We also briefly describe the applicability of these models to high-mobility OFETs, where we underline the need to extend them to incorporate aspects related to charge delocalization.
Collapse
Affiliation(s)
- Haoyuan Li
- School of Chemistry and Biochemistry, and Center for Organic Photonics and Electronics, Georgia Institute of Technology, Atlanta, GA 30332, USA
- Department of Chemistry and Biochemistry, University of Arizona, Tucson, AZ 85721, USA
| | - Jean-Luc Brédas
- School of Chemistry and Biochemistry, and Center for Organic Photonics and Electronics, Georgia Institute of Technology, Atlanta, GA 30332, USA
- Department of Chemistry and Biochemistry, University of Arizona, Tucson, AZ 85721, USA
| |
Collapse
|
14
|
Mukhopadhyaya T, Wagner JS, Fan H, Katz HE. Design and Synthesis of Air-Stable p-Channel-Conjugated Polymers for High Signal-to-Drift Nitrogen Dioxide and Ammonia Sensing. ACS APPLIED MATERIALS & INTERFACES 2020; 12:21974-21984. [PMID: 32315154 DOI: 10.1021/acsami.0c04810] [Citation(s) in RCA: 18] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The development of high-performance-conjugated polymer-based gas sensors involves detailed structural tailoring such that high sensitivities are achieved without compromising the stability of the fabricated devices. In this work, we systematically developed a series of diketopyrrolopyrrole (DPP)-based polymer semiconductors by modifying the polymer backbone to achieve and rationalize enhancements in gas sensitivities and electronic stability in air. NO2- and NH3-responsive polymer-based organic field-effect transistors (OFETs) are described with improved air stability compared to all-thiophene conjugated polymers. Five DPP-fluorene-based polymers were synthesized and compared to two control polymers and used as active layers to detect a concentration of NO2 at least as low as 0.5 ppm. The hypothesis that the less electron-donating fluorene main-chain subunit would lead to increased signal/drift compared to thiophene and carbazole subunits was tested. The sensitivities exhibited a bias voltage-dependent behavior. The proportional on-current change of OFETs using a dithienyl DPP-fluorene polymer reached ∼614% for an exposure to 20 ppm of NO2 for 5 min, testing at a bias voltage of -33 V, among the higher reported NO2 sensitivities for conjugated polymers. Electronic and morphological studies reveal that introduction of the fluorene unit in the DPP backbone decreases the ease of backbone oxidation and induces traps in the thin films. The combination of thin-film morphology and oxidation potentials governs the gas-absorbing properties of these materials. The ratio of responses on exposure to NO2 and NH3 compared to drifts while taking the device through repeated gate voltage sweeps is the highest for two polymers incorporating electron-donating linkers connecting the DPP and thiophene units in the backbone, in this category of organic semiconductors. The responses to NO2 were much larger than that to NH3, indicating increased susceptibility to oxidizing vs reducing gases, and that the capability of oxidizing gases to induce additional charge density has a more dramatic electronic effect than when reducing gases create traps. This work demonstrates the capability of achieving improved stability with the retention of high sensitivity in conjugated polymer-based OFET sensors by modulating redox and morphological properties of polymer semiconductors by structural control.
Collapse
Affiliation(s)
- Tushita Mukhopadhyaya
- Department of Materials Science and Engineering and Department of Chemistry, Johns Hopkins University, 206 Maryland Hall, 3400 North Charles Street, Baltimore, Maryland 21218, United States
| | - Justine S Wagner
- Department of Materials Science and Engineering and Department of Chemistry, Johns Hopkins University, 206 Maryland Hall, 3400 North Charles Street, Baltimore, Maryland 21218, United States
| | - Huidong Fan
- Department of Materials Science and Engineering and Department of Chemistry, Johns Hopkins University, 206 Maryland Hall, 3400 North Charles Street, Baltimore, Maryland 21218, United States
| | - Howard E Katz
- Department of Materials Science and Engineering and Department of Chemistry, Johns Hopkins University, 206 Maryland Hall, 3400 North Charles Street, Baltimore, Maryland 21218, United States
| |
Collapse
|