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Recent Advances in Silicon FET Devices for Gas and Volatile Organic Compound Sensing. CHEMOSENSORS 2021. [DOI: 10.3390/chemosensors9090260] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/27/2022]
Abstract
Highly sensitive and selective gas and volatile organic compound (VOC) sensor platforms with fast response and recovery kinetics are in high demand for environmental health monitoring, industry, and medical diagnostics. Among the various categories of gas sensors studied to date, field effect transistors (FETs) have proved to be an extremely efficient platform due to their miniaturized form factor, high sensitivity, and ultra-low power consumption. Despite the advent of various kinds of new materials, silicon (Si) still enjoys the advantages of excellent and reproducible electronic properties and compatibility with complementary metal–oxide–semiconductor (CMOS) technologies for integrated multiplexing and signal processing. This review gives an overview of the recent developments in Si FETs for gas and VOC sensing. We categorised the Si FETs into Si nanowire (NW) FETs; planar Si FETs, in which the Si channel is either a part of the silicon on insulator (SOI) or the bulk Si, as in conventional FETs; and electrostatically formed nanowire (EFN) FETs. The review begins with a brief introduction, followed by a description of the Si NW FET gas and VOC sensors. A brief description of the various fabrication strategies of Si NWs and the several functionalisation methods to improve the sensing performances of Si NWs are also provided. Although Si NW FETs have excellent sensing properties, they are far from practical realisation due to the extensive fabrication procedures involved, along with other issues that are critically assessed briefly. Then, we describe planar Si FET sensors, which are much closer to real-world implementation. Their simpler device architecture combined with excellent sensing properties enable them as an efficient platform for gas sensing. The third category, the EFN FET sensors, proved to be another potential platform for gas sensing due to their intriguing properties, which are elaborated in detail. Finally, the challenges and future opportunities for gas sensing are addressed.
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Yoon SG, Park BJ, Jin H, Lee WH, Han J, Cho YH, Yook H, Han JW, Kim YS. Probing an Interfacial Ionic Pairing-Induced Molecular Dipole Effect in Ionovoltaic System. SMALL METHODS 2021; 5:e2100323. [PMID: 34927990 DOI: 10.1002/smtd.202100323] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/24/2021] [Revised: 05/18/2021] [Indexed: 06/14/2023]
Abstract
A surficial molecular dipole effect depending on ion-molecular interactions has been crucial issues regarding to an interfacial potential, which can modulate solid electronic and electrochemical systems. Their properties near the interfacial region can be dictated by specific interactions between surface and adsorbates, but understandings of the corresponding details remain at interesting issues. Here, intuitive observations of an ionic pair formation-induced interfacial potential shifts are presented with an ionovoltaic system, and corresponding output signal variations are analyzed in terms of the surficial dipole changes on self-assembled monolayer. With aiding of photoelectron spectroscopies and density function theory simulation, the ionic pair formation-induced potential shifts are revealed to strongly rely on a paired molecular structure and a binding affinity of the paired ionic moieties. Chemical contributions to the binding event are interrogated in terms of polarizability in each ionic group and consistent with chaotropic/kosmotropic character of the ionic groups. Based on these findings, the ionovoltaic output changes are theoretically correlated with an adsorption isotherm reflecting the molecular dipole effect, thereby demonstrating as an efficient interfacial molecular probing method under electrolyte interfacing conditions.
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Affiliation(s)
- Sun Geun Yoon
- Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Byoung Joon Park
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk, 37673, Republic of Korea
| | - Huding Jin
- Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Won Hyung Lee
- Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Junghyup Han
- Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Yong Hyun Cho
- Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Hyunwoo Yook
- School of Interdisciplinary Bioscience and Bioengineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk, 37673, Republic of Korea
| | - Jeong Woo Han
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk, 37673, Republic of Korea
- School of Interdisciplinary Bioscience and Bioengineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk, 37673, Republic of Korea
| | - Youn Sang Kim
- Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Gwanak-gu, Seoul, 08826, Republic of Korea
- School of Chemical & Biological Engineering and Institute of Chemical Processes, College of Engineering, Seoul National University, Gwanak-gu, Seoul, 08826, Republic of Korea
- Advanced Institutes of Convergence Technology, 145 Gwanggyo-ro, Yeongtong-gu, Suwon, 16229, Republic of Korea
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