1
|
Guo L, Shi G, Wang G, Su H, Zhang H, Tang X. Asymmetric Manipulation of Perpendicular Exchange Bias and Programmable Spin Logical Cells by Spin-Orbit Torque in a Ferromagnet/Antiferromagnet System. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2403648. [PMID: 38984445 DOI: 10.1002/advs.202403648] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/07/2024] [Revised: 06/19/2024] [Indexed: 07/11/2024]
Abstract
Antiferromagnets are competitive candidates for the next generation of spintronic devices owing to their superiority in small-scale and low-power-consumption devices. The electrical manipulation of the magnetization and exchange bias (EB) driven by spin-orbit torque (SOT) in ferromagnetic (FM)/antiferromagnetic (AFM) systems has become focused in spintronics. Here, the realization of a large perpendicular EB field in Co/IrMn and the effective manipulation of the magnetic moments of the magnetic Co layer and EB field by SOT in Pt/Co/IrMn system is reported. During the SOT-driven switching process, an asymmetrically manipulated state is observed. Current pulses with the same amplitude but opposite directions induce different magnetization states. Magneto-optical Kerr measurements reveal that this is due to the coexistence of stable and metastable antiferromagnetic domains in the AFM. Exploiting the asymmetric properties of these FM/AFM structures, five spin logic gates, namely AND, OR, NOR, NAND, and NOT, are realized in a single cell via SOT. This study provides an insight into the special ability of SOT on AFMs and also paves an avenue to construct the logic-in-memory and neuromorphic computing cells based on the AFM spintronic system.
Collapse
Affiliation(s)
- Lei Guo
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, 22006 Xiyuan Avenue, High-tech Zone (West), Chengdu, Sichuan, 611731, China
| | - Guopeng Shi
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, 22006 Xiyuan Avenue, High-tech Zone (West), Chengdu, Sichuan, 611731, China
| | - Guocai Wang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, 22006 Xiyuan Avenue, High-tech Zone (West), Chengdu, Sichuan, 611731, China
| | - Hua Su
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, 22006 Xiyuan Avenue, High-tech Zone (West), Chengdu, Sichuan, 611731, China
| | - Huaiwu Zhang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, 22006 Xiyuan Avenue, High-tech Zone (West), Chengdu, Sichuan, 611731, China
| | - Xiaoli Tang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, 22006 Xiyuan Avenue, High-tech Zone (West), Chengdu, Sichuan, 611731, China
| |
Collapse
|
2
|
Belrhazi H, Fattouhi M, El Hafidi MY, El Hafidi M. Reconfigurable Skyrmion-Based Logic Gates: Versatile Design and Full-Scale Implementation. ACS APPLIED MATERIALS & INTERFACES 2024; 16:3703-3718. [PMID: 38214036 DOI: 10.1021/acsami.3c16542] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/13/2024]
Abstract
Herein, we investigate the behavior of skyrmions within a racetrack design incorporating voltage-controlled magnetic anisotropy (VCMA) gates. Our analysis encompassed multiple forces, including spin currents and anisotropy gradients induced by bias voltages. As a result, the efficient control of skyrmion dynamics was achieved across various VCMA gate configurations. Building upon these findings, we propose an efficient approach to reconfigurable skyrmion logic (RSL) in a thin antiferromagnetic (AFM) film through a versatile design. Our RSL harnesses the selective integration of VCMA, spin-polarized currents, and skyrmion-skyrmion (sky-sky) interactions to implement multiple logic gates, including AND, OR, XOR, NOT, NAND, XNOR, and NOR. The design brings a significant advantage with its simplified fabrication process, making the implementation of the RSL practical and accessible for various applications. Furthermore, the RSL enables seamless dynamic switching between logic gates, thereby enhancing its multifunctionality. Additionally, the strategic incorporation of sky-sky interactions and skyrmion-edge repulsion prominently facilitates the realization of complex gates, such as NAND, XNOR, and NOR gates, that typically require intricate design efforts. Hence, this streamlined integration of RSL, coupled with its adaptability to changing computational needs, underscores its potential as a practical solution for implementing high-functionality skyrmion-based logic gates.
Collapse
Affiliation(s)
- Hamza Belrhazi
- Condensed Matter Physics Laboratory, Department of Physics, Faculty of Science Ben M'sik, Hassan II University of Casablanca, D. El Harty Av., B.P 7955, 20165 Casablanca, Morocco
| | - Mouad Fattouhi
- Department of Applied Physics, University of Salamanca, 37008 Salamanca, Spain
| | - M Youssef El Hafidi
- Condensed Matter Physics Laboratory, Department of Physics, Faculty of Science Ben M'sik, Hassan II University of Casablanca, D. El Harty Av., B.P 7955, 20165 Casablanca, Morocco
| | - Mohamed El Hafidi
- Condensed Matter Physics Laboratory, Department of Physics, Faculty of Science Ben M'sik, Hassan II University of Casablanca, D. El Harty Av., B.P 7955, 20165 Casablanca, Morocco
| |
Collapse
|
3
|
Xiong D, Jiang Y, Shi K, Du A, Yao Y, Guo Z, Zhu D, Cao K, Peng S, Cai W, Zhu D, Zhao W. Antiferromagnetic spintronics: An overview and outlook. FUNDAMENTAL RESEARCH 2022; 2:522-534. [PMID: 38934004 PMCID: PMC11197578 DOI: 10.1016/j.fmre.2022.03.016] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/10/2022] [Revised: 03/27/2022] [Accepted: 03/28/2022] [Indexed: 12/01/2022] Open
Abstract
Over the past few decades, the diversified development of antiferromagnetic spintronics has made antiferromagnets (AFMs) interesting and very useful. After tough challenges, the applications of AFMs in electronic devices have transitioned from focusing on the interface coupling features to achieving the manipulation and detection of AFMs. As AFMs are internally magnetic, taking full use of AFMs for information storage has been the main target of research. In this paper, we provide a comprehensive description of AFM spintronics applications from the interface coupling, read-out operations, and writing manipulations perspective. We examine the early use of AFMs in magnetic recordings and conventional magnetoresistive random-access memory (MRAM), and review the latest mechanisms of the manipulation and detection of AFMs. Finally, based on exchange bias (EB) manipulation, a high-performance EB-MRAM is introduced as the next generation of AFM-based memories, which provides an effective method for read-out and writing of AFMs and opens a new era for AFM spintronics.
Collapse
Affiliation(s)
- Danrong Xiong
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
| | - Yuhao Jiang
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
| | - Kewen Shi
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
| | - Ao Du
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
| | - Yuxuan Yao
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
| | - Zongxia Guo
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
| | - Daoqian Zhu
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
| | - Kaihua Cao
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
- Beihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao 266000, China
| | - Shouzhong Peng
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
| | - Wenlong Cai
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
| | - Dapeng Zhu
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
- Beihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao 266000, China
| | - Weisheng Zhao
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
- Beihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao 266000, China
| |
Collapse
|