Uncovering a Vital Band Gap Mechanism of Pnictides

La3Ga5M0.5Sn0.5O14, (M = Ge, Si): Design and Synthesis of Two Langasite Nonlinear Optical Materials with Large Second Harmonic Generation and Birefringence Induced by Distorted (Sn/M)O6 Octahedra

Nonlinear optical (NLO) coherent light sources are widely applied in many areas of science and technology. As the core medium, the NLO material is required to have a wide transparent range, a large NLO response, and a high laser damaged threshold (LDT). It is common knowledge that langasite (La3Ga5SiO14, LGS) crystal has an underdeveloped second-harmonic generation (SHG) coefficient and a small birefringence, which seriously restrict its application in the NLO field, despite that it has a broad transmittance spectrum and a moderate LDT. Herein, we have successfully obtained novel langasite NLO crystals LGSS (La3Ga5Si0.5Sn0.5O14) and LGGS (La3Ga5Ge0.5Sn0.5O14), with short UV absorption edges of 209 and 212 nm, respectively. Incorporating heavy ions Sn4+ into the structure, a distorted BO6 octahedron was adjusted by the radius difference between Sn4+ and Si4+/Ge4+, which caused the strong SHG responses in LGSS (∼10.77 × KDP) and LGGS (∼9.23 × KDP) and increased birefringences of 0.034 and 0.025, respectively. Besides, they also had large energy band gaps (4.95 eV for LGSS, and 4.93 eV for LGGS), which allowed high LDTs with LGSS of 1.3 GW/cm2 and LGGS of 813 MW/cm2. This work demonstrates a new strategy to enhance SHG responses and birefringence for existing NLO materials and enriches langasite family crystals.

Structural strategy for advancing nonlinear optical effects in 1D-[MX2]∞ chains: internal distortion and atomic types

This work aimed to alleviate the limitations of existing mid-infrared nonlinear-optics (MIR-NLO) crystals by conducting theoretical research on 1D-[MX2]∞ (1D = one-dimensional; M = metallic element; X = anionic element) structures in relation to NLO. An analysis was conducted on the electronic structure and optical properties of six selenides (BaZnGeSe4, KxBa1-x/2Ga2Se4, KxBa1-x/2GayIn2-ySe4, KxBa1-x/2In2Se4, BaZnSiSe4, SrZnSiSe4) and three arsenides (Cs2SnAs2, Rb2SnAs2, K2SnAs2) using first principles. Afterwards, the inherent characteristics of these 1D-[MX2]∞ chains were further examined. The calculation results suggest that the presence of internal distortion (non-centrosymmetric) and high electronegativity in M elements can greatly enhance the NLO capability of 1D-[MX2]∞ structures. Furthermore, the first-ever prediction of K2SnAs2's NLO ability has been made. Ultimately, the establishment of a theoretical structure (K2BaSn2As4) provides guidance for the subsequent creation of high-performance MIR-NLO crystals.

Rational Design of Novel Promising Infrared Nonlinear Optical Materials: Structural Chemistry and Balanced Performances

ConspectusSecond-order nonlinear optical (NLO) materials are currently a hot topic in modern solid-state chemistry and optics because they can produce coherent light by frequency conversion. Noncentrosymmetric (NCS) structure is not only the prerequisite for NLO materials but also a challengeable issue because materials tend to be centrosymmetric (CS) in terms of thermodynamical stability. Among NLO materials, an excellent infrared (IR) candidate should simultaneously meet several strict key conditions including a large NLO coefficient, high laser-induced damage threshold (LIDT), phase-matchable (PM) behavior, and so on. Achieving a balance between the large NLO effect and high LIDT is difficult, as they have contradictory requirements for chemical bonds. Considering the urgent need of the high-power IR laser market and the drawbacks of the available ones, exploring new high-performance IR NLO crystals is necessary while challenging. In this Account, we first briefly introduce the status and advancement of IR NLO crystals and emphasize the criteria of an excellent candidate. Then, we will introduce five simple methods developed by us to discover practical NLO candidates through understanding of the chemical composition-structure-NLO performance relationship. (1) A rarely investigated system with simple chemical compositions as new-type NLO crystals, namely, adducts containing S8 molecules, are developed. Combining a chairlike S8 unit with other units through van der Waals forces has successfully obtained several high-performance NLO adducts. (2) The main trend in exploring new NLO crystals is that the chemical composition is more and more diversified and the structure is more and more complex, and expensive and chemically active alkaline and alkaline earth metals are usually introduced as counter cations. In contrast, the research on systems with simple chemical compositions, simple structures, and low costs has been continuously ignored. The binary M2Q3 (M = Ga, In; Q = S, Se) family with rich acentric modifications has been systematically investigated, and they all exhibit strong SHG effects and high LIDTs. (3) We first proposed the concept of inducing CS structures transformed to NCS ones by partial cation substitution to design novel NLO crystals. Considering the huge number of CS structures in the database compared to the number of NCS structures, it is an attractive method to apply CS structures as the parents to obtain potential NLO materials via partial-substitution-induced symmetry breaking. A series of chalcogenides with high NLO performances have been successfully obtained by us in this way. (4) We investigated the first NLO-active rare earth (RE) chalcophosphates and developed this family systematically, and they demonstrate wonderful comprehensive NLO properties. (5) We created a novel mixed-anion system for NLO applications, namely, chalcogenide borates. Usually, mixed-anion compounds can engender a synergistic effect to obtain desired IR NLO properties. Our recent progress on this system suggests that chalcogenide borates are potential candidates for IR NLO applications, although the study is still in its infancy. Finally, we state the current problems of IR NLO materials and give some perspectives for their future development.

Nonlinear Optical Phosphide CuInSi2P4: The Inaugural Member of Diamond-Like Family I-III-IV2-V4 Inspired by ZnGeP2

Noncentrosymmetric phosphides have garnered significant attention as promising systems of infrared (IR) nonlinear optical (NLO) materials. Herein, a new quaternary diamond-like phosphide family I-III-IV2-V4 and its inaugural member, namely, CuInSi2P4 (CISP), were successfully fabricated by isovalent and aliovalent substitution based on ZnGeP2. First-principles calculations revealed that CISP has a large NLO coefficient (d14 = 110.8 pm/V), which can be attributed to the well-aligned tetrahedral [CuP4], [InP4], and [SiP4] units. Remarkably, the extremely small thermal expansion anisotropy (0.09) of CISP enables it to exhibit a considerable laser-induced damage threshold (LIDT, 5.0 × AgGaS2@1.06 μm) despite the relatively narrow band gap (0.81 eV). This work improves the chemical diversity of inorganic phosphide and promotes the development of phosphide systems, which may provide valuable perspectives for future exploration of IR NLO materials.

[K2 PbX][Ga7 S12 ] (X = Cl, Br, I): The First Lead-Containing Cationic Moieties with Ultrahigh Second-Harmonic Generation and Band Gaps Exceeding the Criterion of 2.33 eV

In contrast to anionic group theory of nonlinear optical (NLO) materials that second-harmonic generation (SHG) responses mainly originate from anionic groups, structural regulation on the cationic groups of salt-inclusion chalcogenides (SICs) is performed to make them also contribute to the NLO effects. Herein, the stereochemically active lone-electron-pair Pb2+ cation is first introduced to the cationic groups of NLO SICs, and the resultant [K2 PbX][Ga7 S12 ] (X = Cl, Br, I) are isolated via solid-state method. The features of their three-dimensional structures comprise highly oriented [Ga7 S12 ]3- and [K2 PbX]3+ frameworks derived from AgGaS2 , which display the largest phase-matching SHG intensities (2.5-2.7 × AgGaS2 @1800 nm) among all SICs. Concurrently, three compounds manifest band gap values of 2.54, 2.49, and 2.41 eV (exceeding the criterion of 2.33 eV), which can avoid two-photon absorption under the fundamental laser of 1064 nm, along with the relatively low anisotropy of thermal expansion coefficients, leading to improved laser-induced damage thresholds (LIDTs) values of 2.3, 3.8, and 4.0 times that of AgGaS2 . In addition, the density of states and SHG coefficient calculations demonstrate that the Pb2+ cations narrow the band gaps and benefit SHG responses.

Linear optical afterglow and nonlinear optical harmonic generation from chiral tin(IV) halides: the role of lattice distortions

The striking chemical variability of hybrid organic-inorganic metal halides (HOMHs) endows them with fascinating optoelectronic properties. The inorganic skeletons of HOMHs are often flexible and their lattice deformations could serve as an effective factor for enabling the functionalities of HOMHs. Here, the linear and nonlinear optical properties of zero-dimensional (0D) tin(IV) halides have been tuned by structural distortion facilitated by the chiral amines. Enantiopure α-methylbenzyl ammoniums (XMBA, X = Cl, F) effectively transfer their chirality to the inorganic scaffolds when forming the tin(IV) halides, which enables polar arrangements in their crystals and leads to outstanding second-order nonlinear optical performances. In contrast, the racemic mixture of R- and S-FMBA results in the formation of HOMHs with room temperature phosphorescence. The lower lattice deformation in (rac-FMBA)₂SnCl₆ restrains the non-radiative decay from electron-phonon coupling and facilitates the photoluminescence. Meanwhile, the marked π-π interaction stabilizes the T₁ state for phosphorescent emission. These distinct linear and nonlinear optical properties denote the important role that the lattice distortion plays in tuning the optical properties of low-dimensional HOMHs, and offer a promising perspective of 0D tin(IV) halides for applications in optoelectronic materials and devices.

Semiconducting silicon-phosphorous frameworks for caging exotic polycations

A series of novel semiconductors AAe6Si12P20X (A = Na, K, Rb, Cs; Ae = Sr, Ba; X = Cl, Br, I) is reported. Their crystal structures feature tetrahedral Si-P framework...

Achieving a strong second harmonic generation response and a wide band gap in a Hg-based material

The property-oriented structural design strategy is employed in Hg-based chalcogenide to synthesize a new IR NLO crystal, [Ba4Cl2][HgGa4S10], which exhibits well-balanced NLO properties, including large SHG response and wide band gap.